CN204946923U - There is the light emitting diode epitaxial structure of AlGaN conductive layer - Google Patents
There is the light emitting diode epitaxial structure of AlGaN conductive layer Download PDFInfo
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- CN204946923U CN204946923U CN201520619273.4U CN201520619273U CN204946923U CN 204946923 U CN204946923 U CN 204946923U CN 201520619273 U CN201520619273 U CN 201520619273U CN 204946923 U CN204946923 U CN 204946923U
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Abstract
The utility model openly has the light emitting diode epitaxial structure of AlGaN conductive layer.Light emitting diode epitaxial structure comprises substrate, GaN resilient coating, N-type GaN conductive layer, multi-quantum well active region and P type AlGaN conductive layer.P-type conduction layer is the AlGaN material containing aluminium, and the Al component in AlGaN layer is along direction of growth linear increment.P type AlGaN conductive layer of the present utility model can avoid the blocking hole caused at P type AlGaN electronic barrier layer and P type GaN conductive layer to inject the potential barrier of multi-quantum well active region, Al component in P type AlGaN conductive layer is along direction of growth linear increment, polarization charge densities can be reduced, reduce the polarized electric field intensity of quantum well, reduce band curvature, strengthen P type AlGaN conductive layer and blocking effect is overflowed to electronics, and weaken the stop that hole is injected.
Description
Technical field
The utility model relates to LED technology field, is specifically related to a kind of light emitting diode epitaxial structure containing aluminium conductive layer with gradual change al composition.
Background technology
Light-emitting diode (being called for short " LED ") is a kind of semiconducting solid luminescent device, and it utilizes conduction band electron and the valence band hole generation radiation recombination of semi-conducting material inside, releases energy and directly luminescence with form of photons.By designing different semi-conducting material energy gaps, light-emitting diode can launch the light from infrared to ultraviolet different-waveband.
Iii-nitride light emitting devices has efficient, energy-conservation, long-life with it and volume is little etc. that advantage worldwide obtains broad development.Emission wavelength, in the ultraviolet light-emitting diode of 210 ~ 400nm, because its modulating frequency is high, volume is little, without advantages such as mercury environmental protection and high sterilization potentiality, has wide practical use in sterilizing, biological medicine, illumination, storage and the field such as to communicate; Emission wavelength at the blue light-emitting diode of 440 ~ 470nm because its energy consumption is low, the advantage such as life-span long and environmental protection, have huge application prospect in illumination, brightening and display field; Emission wavelength, at the green light LED of 500 ~ 550nm, also has extraordinary application prospect in brightening and display and RGB three primary colors lighting field.
The internal quantum efficiency of current GaN base ultraviolet LED is very low, and wavelength is shorter, and the efficiency of ultraviolet LED is lower, which greatly limits the application of ultraviolet LED.Therefore, in the urgent need to studying high performance GaN base ultraviolet LED.Ultraviolet LED internal quantum efficiency low main cause is caused to be that electronics overflows from multi-quantum well active region.
Countries in the world scientist has dropped into great effort in order to the quantum efficiency improving ultraviolet LED.A kind of method that prevention charge carrier be commonly used overflows is exactly in the end grow one deck P type AlGaN layer between one deck GaN quantum well potential barrier and P type GaN conductive layer.This layer of P type AlGaN layer is called as electronic barrier layer (being called for short " EBL "), and its energy gap is greater than the energy gap of GaN.Therefore, in the end a potential barrier can be introduced between a GaN quantum well potential barrier and EBL, to realize the stop to overflowing electronics.The shortcoming of the method is, in the interface of P type GaN conductive layer and EBL, valence band exists a potential barrier, blocks hole from P-type conduction layer to the injection of multi-quantum well active region, reduce hole injection efficiency.Simultaneously, due to polarized electric field that lattice mismatch produces between last GaN quantum well barrier layer and EBL layer, in their interface, valence band produces a barrier spike, blocking hole injects multi-quantum well active region, and reduce the effective barrier height that on conduction band, block electrons is overflowed, suppress the effect of electronic blocking.
(the LightwaveTechnologyJournalof such as J.R.Chen, 2008,26 (3): 329 – 337) a kind of method using the epitaxial structure of quaternary AlInGaN electronic barrier layer is proposed, its technical scheme is, by the Al component in suitable control AlInGaN electronic barrier layer and In component, significantly can reduce the polarization charge densities of the interface of last GaN quantum well potential barrier and EBL, reduce polarized electric field intensity, overflow multi-quantum well active region to reduce electronics.The shortcoming of the method is, it is comparatively large that the best due to Al and In is incorporated to condition difference, is difficult to the AlInGaN crystal of growing high-quality.
Patent CN101640236A discloses a kind of superlattice luminous element of electronic barrier layer.Its technical scheme is, use three or five race's semiconductor layers that two kinds of energy gaps are different, there is periodically repeated deposition and, on above-mentioned active illuminating layer, form superlattice structure, using as the higher electronic barrier layer of a potential barrier, multi-quantum well active region is overflowed in order to block electrons, the combination of three or the five race's semiconductor layers simultaneously varied in size by lattice, provides stress compensation, to reduce the accumulation of stress between itself and multi-quantum well active region, reduce polarized electric field, improve the hole concentration in electronic barrier layer.The shortcoming of the method is, superlattice electronic barrier layer makes the working voltage of LED rise, and the interface of superlattice electronic barrier layer and last GaN quantum well potential barrier still exists larger polarization charge.
Utility model content
For in existing GaN base ultraviolet LED, it is low that electronics injects multi-quantum well active region efficiency from multi-quantum well active region spilling and hole, cause the problem that internal quantum efficiency is low, the utility model proposes the light emitting diode epitaxial structure with AlGaN conductive layer of a kind of P of employing type gradual change Al component AlGaN layer as P-type conduction layer.
The utility model solves the technical scheme that its technical problem adopts.
A kind of light emitting diode epitaxial structure with AlGaN conductive layer, it comprises substrate, GaN resilient coating, N-type GaN conductive layer, multi-quantum well active region and P-type conduction layer from bottom to up successively, described P-type conduction layer is the AlGaN material and the P type AlGaN conductive layer that contain aluminium, and the Al component in P type AlGaN conductive layer is along direction of growth linear increment.Described P-type conduction layer is the AlGaN material of P type doping.
Further, in described P-type conduction layer, along the direction of growth, the Al component of the interface contacted with multi-quantum well active region is X, and X >=0, the Al component of P-type conduction layer one interface is Y, and Y >=X >=0, the Al component linearly incremental variations of P-type conduction layer mid portion.
Further, in described P type AlGaN conductive layer, Al component is as follows along the growing method of direction of growth linear increment:
Reative cell passes into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl aluminium, temperature brings up to 800 degrees Celsius, growing P-type AlGaN conductive layer on the active area, period keeps trimethyl gallium air flow rate constant, make trimethyl aluminium air flow rate with growth time linear growth, make al composition along the direction of growth, be incremented to Y from x-ray; Thickness 200nm, doping content 5 × 10
17cm
-3.
Further, the InGaN Multiple Quantum Well potential well layer that the described multi-quantum well active region cycle is alternately arranged and InGaN Multiple Quantum Well barrier layer.
The method with the light emitting diode epitaxial structure of AlGaN conductive layer described in preparation, it is as follows that it comprises step:
(1) Sapphire Substrate is put into Metallo-Organic Chemical Vapor chemical deposition equipment, pass into hydrogen, reaction chamber temperature is elevated to 1300 degrees Celsius, carries out HIGH TEMPERATURE PURGE to substrate slice;
(2) reaction chamber temperature is reduced to 1100 degree, passes into ammonia, hydrogen and trimethyl gallium, the involuntary Doped GaN resilient coating of the Grown 3um described in step (1);
(3) reative cell passes into silane, ammonia, hydrogen and trimethyl gallium, the GaN resilient coating described in step (2) grows N-type GaN conductive layer, thickness 4um, doping content 5 × 10
18cm
-3;
(4) reaction chamber temperature keeps 1100 degrees Celsius, passes into silane, ammonia, nitrogen, trimethyl gallium and trimethyl indium, and the N-type described in step (3) mixes growing GaN Multiple Quantum Well barrier layer on GaN conductive layer;
(5) reaction chamber temperature is reduced to 700 degrees centigrade, passes into ammonia, nitrogen, trimethyl gallium and trimethyl indium, growing InGaN Multiple Quantum Well potential well layer on the InGaN Multiple Quantum Well barrier layer described in step (4);
(6) be cycled to repeat following steps (a), step (b) 4 times, obtain InGaN/InGaN multi-quantum well active region:
A reaction chamber temperature is risen to 1100 degrees Celsius by (), continued growth GaN Multiple Quantum Well barrier layer;
B () reaction chamber temperature is reduced to 700 degrees centigrade, growing InGaN Multiple Quantum Well potential well layer on the GaN Multiple Quantum Well barrier layer described in step (a);
(7) reative cell passes into two luxuriant magnesium, ammonia, nitrogen, trimethyl gallium and trimethyl aluminium, temperature brings up to 800 degrees Celsius, growing P-type AlGaN conductive layer on the active area described in step (6), period keeps trimethyl gallium air flow rate constant, make trimethyl aluminium air flow rate with growth time linear growth, make al composition along the direction of growth, be incremented to Y from x-ray, growth thickness is 200nm, doping content 5 × 10
17cm
-3.
Compared with prior art, the beneficial effects of the utility model are: adopt P type Al content gradually variational AlGaN layer as P-type conduction layer, substitute P type AlGaN electronic barrier layer and the P type GaN conductive layer of traditional successively growth on GaN quantum well barrier layer, solve that the hole injection efficiency of conventional method caused by polarized electric field is low, the problem of block electrons spill-over effects difference, the efficiency of multi-quantum well active region is injected in the hole that effectively improve GaN ultraviolet LED, the electronics suppressing electronics spilling multi-quantum well active region to cause is revealed, thus improves internal quantum efficiency.
Accompanying drawing explanation
Fig. 1 is the GaN epitaxial structure schematic diagram in example.
Fig. 2 is the band structure schematic diagram of the utility model and traditional GaNLED.
Hole concentration profiles versus figure in the multi-quantum well active region that Fig. 3 is the utility model LED with traditional LED under identical injected current density.
Fig. 4 is the luminous power curve of the utility model LED and traditional LED under different injected current density.
In figure: 1, substrate; 2, GaN resilient coating; 3, N-type GaN conductive layer; 4, GaN quantum is built; 5, InGaN quantum well; 6, multi-quantum well active region; 7, P type AlGaN conductive layer; 8, the conduction band of the utility model LED; 9, the conduction band of traditional LED; 10, the valence band of traditional LED; 11, the valence band of the utility model LED.
Embodiment
Below in conjunction with accompanying drawing and example, the utility model is described further, but is not limited thereto.
As shown in Figure 1, described LED epitaxial is followed successively by Sapphire Substrate 1, GaN resilient coating 2, N-type GaN conductive layer 3, multi-quantum well active region 6 and P type AlnGaN conductive layer 7 from bottom to top.
Preparation method's step with the light emitting diode epitaxial structure of AlGaN conductive layer is as follows:
(1). Sapphire Substrate is put into Metallo-Organic Chemical Vapor chemical deposition equipment, pass into hydrogen, reaction chamber temperature is elevated to 1300 degrees Celsius, carries out HIGH TEMPERATURE PURGE to substrate slice.
(2). reaction chamber temperature is reduced to 1100 degree, passes into ammonia, hydrogen and trimethyl gallium, the involuntary Doped GaN resilient coating of the Grown 3um described in step (1).
(3). reative cell passes into silane, ammonia, hydrogen and trimethyl gallium, the GaN resilient coating described in step (2) grows N-type GaN conductive layer, thickness 4um, doping content 5 × 10
18cm
-3.
(4). reaction chamber temperature keeps 1100 degrees Celsius, passes into silane, ammonia, nitrogen, trimethyl gallium and trimethyl indium, and the N-type described in step (3) mixes growing GaN Multiple Quantum Well barrier layer on GaN conductive layer.
(5). reaction chamber temperature is reduced to 700 degrees centigrade, passes into ammonia, nitrogen, trimethyl gallium and trimethyl indium, growing InGaN Multiple Quantum Well potential well layer on the InGaN Multiple Quantum Well barrier layer described in step (4);
(6). be cycled to repeat following steps (a), step (b) 4 times, obtain InGaN/InGaN multi-quantum well active region:
(a). reaction chamber temperature is risen to 1100 degrees Celsius, continued growth GaN Multiple Quantum Well barrier layer;
(b). reaction chamber temperature is reduced to 700 degrees centigrade, growing InGaN Multiple Quantum Well potential well layer on the GaN Multiple Quantum Well barrier layer described in step (a);
(7). reative cell passes into two luxuriant magnesium, ammonia, nitrogen trimethyl gallium and trimethyl aluminium, and temperature brings up to 800 degrees Celsius, growing P-type AlGaN conductive layer on the active area described in step (6).Period keeps trimethyl gallium air flow rate constant, makes trimethyl aluminium air flow rate with growth time linear growth, makes al composition along the direction of growth, be incremented to Y from x-ray.Thickness 200nm, doping content 5 × 1017cm-3.
In P type AlGaN conductive layer described in the utility model, along the direction of growth, be X with the Al component of the interface of last GaN Multiple Quantum Well potential barrier, and X >=0, the Al component of another interface of P type AlGaN layer is Y, and Y >=X >=0, mid portion Al component linearly incremental variations.
Fig. 2 is the conduction band 8 of the band structure schematic diagram of the utility model and traditional GaNLED, the utility model LED; The conduction band 9 of tradition LED; The valence band 10 of tradition LED; The valence band 11 of the utility model LED.Hole concentration distribution in the multi-quantum well active region that Fig. 3 is the utility model LED with traditional LED under identical injected current density, in figure 3, ordinate is hole density, and unit is 10
18/ cm
3, abscissa is position, and unit is μm.Fig. 4 is the luminous power curve of the utility model LED and traditional LED under different injected current density, and in the diagram, ordinate is luminous power, and unit is mW, and abscissa is injected current density, and unit is A/cm
2.
Known, the utility model directly uses AlGaN as P-type conduction layer, substitute the method for traditional successively growing P-type AlGaN electronic barrier layer and P type GaN conductive layer on GaN quantum well barrier layer, the blocking hole caused at P type AlGaN electronic barrier layer can be avoided to inject the potential barrier of multi-quantum well active region, improve the efficiency that multi-quantum well active region is injected in hole, thus improve internal quantum efficiency.Secondly, Al component in P type AlGaN conductive layer brings up to Y by X gradually along the direction of growth, the lattice constant of AlGaN layer can be made closer to the lattice constant of GaN Multiple Quantum Well barrier layer, lattice mismatch reduces, reduce the polarization charge densities of GaN quantum well barrier layer and AlGaN layer interface, reduce the polarized electric field intensity of quantum well, reduce band curvature, strengthen P type AlGaN conductive layer and blocking effect is overflowed to electronics, and weaken the stop that hole is injected.Adopt method of the present utility model, solve that the hole injection efficiency of conventional method caused by polarized electric field is low, the problem of block electrons spill-over effects difference, the efficiency of multi-quantum well active region is injected in the hole that effectively improve GaN ultraviolet LED, the electronics suppressing electronics spilling multi-quantum well active region to cause is revealed, thus raising internal quantum efficiency, improve luminous power.
Last it is noted that above each embodiment is only in order to illustrate the technical solution of the utility model, be not intended to limit; Although be described in detail the utility model with reference to foregoing embodiments, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein some or all of technical characteristic; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the scope of each embodiment technical scheme of the utility model.
Claims (4)
1. one kind has the light emitting diode epitaxial structure of AlGaN conductive layer, it comprises substrate, GaN resilient coating, N-type GaN conductive layer, multi-quantum well active region and P-type conduction layer from bottom to up successively, it is characterized in that described P-type conduction layer is the AlGaN material and the P type AlGaN conductive layer that contain aluminium, and the Al component in P type AlGaN conductive layer is along direction of growth linear increment.
2. the light emitting diode epitaxial structure with AlGaN conductive layer according to claim 1, is characterized in that: described P-type conduction layer is the AlGaN material of P type doping.
3. the light emitting diode epitaxial structure with AlGaN conductive layer according to claim 1, it is characterized in that: in described P-type conduction layer, along the direction of growth, the Al component of the interface contacted with multi-quantum well active region is X, and X >=0, the Al component of P-type conduction layer one interface is Y, and Y >=X >=0, the Al component linearly incremental variations of P-type conduction layer mid portion.
4. there is the light emitting diode epitaxial structure of AlGaN conductive layer as claimed in claim 1, it is characterized in that, the InGaN Multiple Quantum Well potential well layer that the described multi-quantum well active region cycle is alternately arranged and InGaN Multiple Quantum Well barrier layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545916A (en) * | 2018-11-30 | 2019-03-29 | 深圳市洲明科技股份有限公司 | A kind of ultraviolet LED epitaxial slice structure and preparation method thereof |
| CN115189232A (en) * | 2022-07-07 | 2022-10-14 | 西安唐晶量子科技有限公司 | Epitaxial wafer of semiconductor laser, preparation method of epitaxial wafer and semiconductor laser |
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2015
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109545916A (en) * | 2018-11-30 | 2019-03-29 | 深圳市洲明科技股份有限公司 | A kind of ultraviolet LED epitaxial slice structure and preparation method thereof |
| CN115189232A (en) * | 2022-07-07 | 2022-10-14 | 西安唐晶量子科技有限公司 | Epitaxial wafer of semiconductor laser, preparation method of epitaxial wafer and semiconductor laser |
| CN115189232B (en) * | 2022-07-07 | 2024-04-16 | 西安唐晶量子科技有限公司 | Epitaxial wafer of semiconductor laser, epitaxial wafer preparation method and semiconductor laser |
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