CN204882703U - Faint current signal detection device of silicon photocell - Google Patents
Faint current signal detection device of silicon photocell Download PDFInfo
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- CN204882703U CN204882703U CN201520481119.5U CN201520481119U CN204882703U CN 204882703 U CN204882703 U CN 204882703U CN 201520481119 U CN201520481119 U CN 201520481119U CN 204882703 U CN204882703 U CN 204882703U
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Abstract
The utility model provides a faint current signal detection device of silicon photocell, includes that analog switch switches module, IV conversion module, uA level current amplification module, mA level current amplification module, AD conversion module, logical processing module, ISA communication module. Analog switch switch the module link to each other with IV conversion module, uA level current amplification module, mA level current amplification module and logical processing module IV conversion module and analog switch switch module, uA level current amplification module and mA level current amplification module and link to each other, UA level current amplification module and analog switch switch module, IV conversion module and AD conversion module and link to each other, MA level current amplification module and analog switch switch module, IV conversion module and AD conversion module and link to each other, AD conversion module and uA level current amplification module, mA level current amplification module and logical processing module link to each other, logical processing module and AD conversion module and ISA communication module link to each other, ISA communication module and logical processing module link to each other to final exportable through nurse one's health with amplify after uA level or the corresponding voltage signal of mA level electric current, thereby realize utilizing simple circuit completion the multichannel not automatic switch -over of equidimension electric current and high accuracy current detection's function.
Description
Technical field
The utility model relates to a kind of silicon photocell low current signal pick-up unit, particularly
A kind of silicon photocell low current signal testing circuit device of powering for spacecraft.
Background technology
Silicon photocell is a kind of semiconductor devices directly light energy conversion being become electric energy based on photoelectric effect principle, is widely used in spacecraft, solar cell, optical communication, digital vedio recording etc.Along with the development of spationautics and the raising day by day to index requests such as spacecraft (as satellite) high, precision and frontiers, require as spacecraft provides the silicon photocell of the energy also to high-quality, highly reliable, high stability and integrated development, and to carry out accurate determination and analysis to the low current signal that silicon photocell exports be the important means and the method that ensure the indices such as silicon photocell quality.The silicon photocell of spacecraft particularly satellite is generally made up of a lot of roads sensitive face, the electric current that its sensitive face has uA level or the different size of mA level under different angles and different illuminance exports, can by the calculating of output current the indexs such as the current sensitivity of silicon photocell, unevenness and inconsistency, peak value degree of asymmetry be demarcated and be evaluated, thus determine the quality of silicon photocell overall quality.
Summary of the invention
Its object of the utility model is just to provide a kind of silicon photocell low current signal pick-up unit, realizes utilizing ball bearing made using to complete the automatic switchover of the different current of hyperchannel and the function of high-precision current detection.
Realize above-mentioned purpose and the technical scheme taked, comprise analog switch handover module, I/V modular converter, uA level Current amplifier module, mA level Current amplifier module, A/D modular converter, logic processing module, ISA communication module, described analog switch handover module and I/V modular converter, uA level Current amplifier module, mA level Current amplifier module is connected with logic processing module, described I/V modular converter and analog switch handover module, uA level Current amplifier module is connected with mA level Current amplifier module, described uA level Current amplifier module and analog switch handover module, I/V modular converter is connected with A/D modular converter, , described mA level Current amplifier module is connected with A/D modular converter with analog switch handover module, I/V modular converter, described A/D modular converter is connected with logic processing module with uA level Current amplifier module, mA level Current amplifier module, described logic processing module is connected with ISA communication module with A/D modular converter, and described ISA communication module is connected with logic processing module.
Compared with prior art the utility model has the following advantages.
1, can detect multi channel currents, port number maximum Ke Da 14 tunnel simultaneously;
2, broad quantum, can detect uA level or mA level electric current;
3, circuit is simple, and interchannel Current compliance is good;
4, accuracy of detection is high, and error is less than 0.5%.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the utility model is described in further detail.
Fig. 1 is this apparatus structure circuit composition and logical schematic.
Embodiment
This device comprises analog switch handover module, I/V modular converter, uA level Current amplifier module, mA level Current amplifier module, A/D modular converter, logic processing module, ISA communication module, described analog switch handover module and I/V modular converter, uA level Current amplifier module, mA level Current amplifier module is connected with logic processing module, as shown in Figure 1, described I/V modular converter and analog switch handover module, uA level Current amplifier module is connected with mA level Current amplifier module, described uA level Current amplifier module and analog switch handover module, I/V modular converter is connected with A/D modular converter, , described mA level Current amplifier module is connected with A/D modular converter with analog switch handover module, I/V modular converter, described A/D modular converter is connected with logic processing module with uA level Current amplifier module, mA level Current amplifier module, described logic processing module is connected with ISA communication module with A/D modular converter, and described ISA communication module is connected with logic processing module.
Described analog switch handover module comprises the analog switch chip that two panels passage leakage current is less than 1nA, a slice at least comprises 14 tunnels analogy switches, for switching 14 channel currents of input in turn, another sheet at least comprises 2 tunnels analogy switches, for switching uA level electric current and mA level electric current.
Described I/V modular converter at least comprises the high-accuracy little valued resistor of an extremely low TCR coefficient, for realizing the conversion of the silicon photocell magnitude of current to voltage.
Described uA level Current amplifier module comprises one-level amplifying circuit and second amplifying circuit, for realizing the magnification at high multiple of uA level electric current, wherein firsts and seconds amplifying circuit comprises operational amplifier respectively, its input offset voltage is less than 1uV, the drift of input offset voltage temperature is less than 0.02 μ V/ DEG C, and input offset current is less than 8pA.
Described one-level amplifying circuit and second amplifying circuit comprise the precision resistance network be made up of three little valued resistor respectively, for replacing the large resistance feedback resistance of amplifier
, and respectively with the reverse input end of amplifier with amplify output terminal and be connected; Also include the anti-self-oscillation electric capacity C of a low-capacitance, be connected with precision resistance network with the reverse input end of amplifier respectively.
Described mA level Current amplifier module comprises front voltage follower and second amplifying circuit, for realizing the amplification of mA level electric current, wherein front voltage follower and second amplifying circuit comprise operational amplifier respectively, its input offset voltage is less than 1uV, the drift of input offset voltage temperature is less than 0.02 μ V/ DEG C, and input offset current is less than 8pA.
Described second amplifying circuit comprises the precision resistance network be made up of three little valued resistor, for replacing the large resistance feedback resistance of amplifier
, and respectively with the reverse input end of amplifier with amplify output terminal and be connected; Also comprise the anti-self-oscillation electric capacity C of a low-capacitance, be connected with precision resistance network with the reverse input end of amplifier respectively.
Described A/D modular converter comprises a kind of A/D conversion chip with 16 bit resolutions and the input of 8 tunnels analogies, two analog channels that the uA level electric current of its front end after conditioning and mA level current signal send into A/D conversion chip respectively carry out the conversion of analog quantity to digital quantity, export subsequent module to be for further processing after converting in 16 bit parallel data modes.
Described logic processing module comprises the field programmable gate array chip that a kind of number of pins is 144, changes and analog switch switching and the collection of current signal and transmission for control A/D.
Embodiment
As shown in Figure 1, the present embodiment comprises silicon photocell, analog switch commutation circuit, I/V change-over circuit, uA level current amplification circuit, mA level current amplification circuit, A/D change-over circuit, logic processing circuit, ISA communicating circuit and host computer.
Under light illumination, the code channel of its each different size all produces the electric current varied in size to silicon photocell (or its assembly).When plane of exposure hour, it generally can produce the electric current of uA level size; When plane of exposure is large, it generally can produce the electric current of mA level size.The electric current that each code channel of silicon photocell produces is connected to the channel current switching analoging switch of analog switch commutation circuit by private mask line, for completing conducting in turn and the collection of the different code channel electric currents of silicon photocell, then by uA level and mA level current switching analog switch, for completing the switching of silicon photocell different size shelves electric current.Then current signal after analog switch switching and modulation inputs to I/V change-over circuit, by the sampling resistor of a little resistance high stability, current signal is converted to voltage signal, this voltage signal inputs to uA level current amplification circuit or mA level current amplification circuit carries out one-level amplification and secondary amplifies, and is finally converted into the analog voltage signal of 0 ~ 4.2V scope.Analog voltage signal converts it 16 bit parallel digital signals being easy to FPGA process through follow-up A/D change-over circuit to, FPGA mono-aspect in logic processing circuit controls the switching of front end analogue switch, that changes with certain sequential control A/D on the other hand completes, simultaneously the 16 bit parallel stored digital signals gathered in dual port RAM, the complete data of each storage, FPGA sends a look-at-me, ISA communicating circuit as the bridge of logic processing circuit and upper inter-machine communication, for completing the transmission of current data to host computer.When host computer finds that there is look-at-me, corresponding current data can be read from dual port RAM appropriate address, host computer is after reading silicon photocell electric current, remake and further calculate and process, and calculate the value of silicon photocell indices parameter with certain algorithm, and then determine the quality condition of silicon photocell.
Claims (7)
1. a silicon photocell low current signal pick-up unit, it is characterized in that, comprise analog switch handover module, I/V modular converter, uA level Current amplifier module, mA level Current amplifier module, A/D modular converter, logic processing module, ISA communication module, described analog switch handover module and I/V modular converter, uA level Current amplifier module, mA level Current amplifier module is connected with logic processing module, described I/V modular converter and analog switch handover module, uA level Current amplifier module is connected with mA level Current amplifier module, described uA level Current amplifier module and analog switch handover module, I/V modular converter is connected with A/D modular converter, , described mA level Current amplifier module is connected with A/D modular converter with analog switch handover module, I/V modular converter, described A/D modular converter is connected with logic processing module with uA level Current amplifier module, mA level Current amplifier module, described logic processing module is connected with ISA communication module with A/D modular converter, and described ISA communication module is connected with logic processing module.
2. a kind of silicon photocell low current signal pick-up unit according to claim 1, it is characterized in that, described analog switch handover module comprises the analog switch chip that two panels passage leakage current is less than 1nA, a slice at least comprises 14 tunnels analogy switches, for switching 14 channel currents of input in turn, another sheet at least comprises 2 tunnels analogy switches, for switching uA level electric current and mA level electric current.
3. a kind of silicon photocell low current signal pick-up unit according to claim 1, it is characterized in that, described I/V modular converter at least comprises the high-accuracy little valued resistor of an extremely low TCR coefficient, for realizing the conversion of the silicon photocell magnitude of current to voltage.
4. a kind of silicon photocell low current signal pick-up unit according to claim 1, it is characterized in that, described uA level Current amplifier module comprises one-level amplifying circuit and second amplifying circuit, for realizing the magnification at high multiple of uA level electric current, wherein firsts and seconds amplifying circuit comprises operational amplifier respectively, its input offset voltage is less than 1uV, and the drift of input offset voltage temperature is less than 0.02 μ V/ DEG C, and input offset current is less than 8pA.
5. a kind of silicon photocell low current signal pick-up unit according to claim 1, it is characterized in that, described mA level Current amplifier module comprises front voltage follower and second amplifying circuit, for realizing the amplification of mA level electric current, wherein front voltage follower and second amplifying circuit comprise operational amplifier respectively, its input offset voltage is less than 1uV, and the drift of input offset voltage temperature is less than 0.02 μ V/ DEG C, and input offset current is less than 8pA.
6. a kind of silicon photocell low current signal pick-up unit according to claim 1, it is characterized in that, described A/D modular converter comprises a kind of A/D conversion chip with 16 bit resolutions and the input of 8 tunnels analogies, two analog channels that the uA level electric current of its front end after conditioning and mA level current signal send into A/D conversion chip respectively carry out the conversion of analog quantity to digital quantity, export subsequent module to be for further processing after converting in 16 bit parallel data modes.
7. a kind of silicon photocell low current signal pick-up unit according to claim 1, it is characterized in that, described logic processing module comprises the field programmable gate array chip that a kind of number of pins is 144, changes and analog switch switching and the collection of current signal and transmission for control A/D.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520481119.5U CN204882703U (en) | 2015-07-07 | 2015-07-07 | Faint current signal detection device of silicon photocell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520481119.5U CN204882703U (en) | 2015-07-07 | 2015-07-07 | Faint current signal detection device of silicon photocell |
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| CN204882703U true CN204882703U (en) | 2015-12-16 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841809A (en) * | 2016-05-09 | 2016-08-10 | 河海大学常州校区 | Radiation test circuit based on silicon solar battery |
| CN109669067A (en) * | 2019-03-04 | 2019-04-23 | 苏州道捷电子科技有限公司 | Multi-channel high-accuracy electric current dynamic realtime detection device |
| CN112468098A (en) * | 2020-11-19 | 2021-03-09 | 中国核动力研究设计院 | Micro-current amplification system and method based on combination of linearity and logarithm |
-
2015
- 2015-07-07 CN CN201520481119.5U patent/CN204882703U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841809A (en) * | 2016-05-09 | 2016-08-10 | 河海大学常州校区 | Radiation test circuit based on silicon solar battery |
| CN105841809B (en) * | 2016-05-09 | 2017-11-17 | 河海大学常州校区 | A kind of irradiation test circuit based on silicon solar cell |
| CN109669067A (en) * | 2019-03-04 | 2019-04-23 | 苏州道捷电子科技有限公司 | Multi-channel high-accuracy electric current dynamic realtime detection device |
| CN112468098A (en) * | 2020-11-19 | 2021-03-09 | 中国核动力研究设计院 | Micro-current amplification system and method based on combination of linearity and logarithm |
| CN112468098B (en) * | 2020-11-19 | 2022-07-01 | 中国核动力研究设计院 | Micro-current amplification system and method based on combination of linearity and logarithm |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151216 Termination date: 20170707 |
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| CF01 | Termination of patent right due to non-payment of annual fee |