CN204874819U - A top slope parts, reacting chamber and epitaxial reactor for reacting chamber of epitaxial reactor - Google Patents

Abstract

The utility model relates to a be located quartz reaction chamber (1) inside part (3), the reacting chamber that is used for the epitaxial reactor and epitaxial reactor of epitaxial reactor, this part is including horizontal quartz plate (30) and two perpendicular quartzy walls (31, 32) located to the side of two respectively that have front, the back and two sides, the front portion and/or the rear portion of board are crooked. A reacting chamber and epitaxial reactor all include this part for the epitaxial reactor. The advantage is: this part can improve the air current and the temperature performance of part.

Description

For the top droop parts of the reaction chamber of epitaxial reactor, reaction chamber and epitaxial reactor

Technical field

The present invention relates to a kind of parts of the reaction chamber for epitaxial reactor.

Background technology

Usually, the cold wall chamber designs of epitaxial reactor be only be contained in epitaxial deposition therein during the device of horizontal support substrate, this bracing or strutting arrangement can be associated with single or multiple lining device; This kind of bracing or strutting arrangement realizes heating by induction and carries out conduction heating to substrate, and this kind of bracing or strutting arrangement is commonly referred in English " susceptor (susceptor) ".

Such as, PCT patent application WO96/10659A2 discloses a kind of such cold wall reaction chamber.

Sometimes (time little), in the cold wall reaction chamber of epitaxial reactor, parts are also had, to be conducive to especially carrying out temperature control to the upper surface of the substrate supported by " susceptor " between extension depositional stage; This parts also may affect the hot-fluid of the reaction gas flow of reaction chamber inside and/or the locular wall by reaction chamber.

Such as, PCT patent application WO2010/119430A1 discloses a kind of such (that is, having parts) cold wall reaction chamber.

Such (that is, there are parts) cold wall reaction chamber is schematically shown in appended Fig. 1 and Fig. 2.Reaction chamber 1 is thin-walled (transparent) silica tube of the lateral cross with rectangle (or being substantially rectangle); Usually there is first thick (transparent or opaque) quartz flange 11 in its ingress, and there is in its exit second thick (transparent or opaque) quartz flange 12 usually.Reaction chamber 1 holds " susceptor " 2 being generally the thick disk be made up of graphite; " susceptor " 2 is designed to make it rotate by axle between extension depositional stage; Fig. 1 and Fig. 2 this axle not shown, but show the hole for receiving this axle in the lower wall of reaction chamber 1; The upper wall of reaction chamber 1 can be complete level, or can be towards the outlet of reaction chamber slightly downward-sloping (as in such as PCT patent application WO96/10659A2).

Thin-walled (transparent or opaque) quartz member 3 is had in reaction chamber 1 inside; These parts 3 comprise and have front, the back side and the horizontal quartz plate 30 of two sides and respectively in two vertical quartz wall 31 and 32 at this two sides place; Parts 3 start from inlet flange 11 and end at discharge flange 12; Reactant gases only parts 3 inside (especially above " susceptor " 2) from chamber ingress (see the left arrow " I " Fig. 2, lower front at plate 30) flow to chamber outlet (see the right arrow " O " in Fig. 2, the lower rear at plate 30); In fig. 1 and 2 and not shown single/multiple lining device be associated with " susceptor " 2, but it/their upper profile corresponds to dotted line.

Summary of the invention

General object of the present invention improves the parts according to prior art.

Especially, specific purposes of the present invention are the air-flow and the temperature performance that improve parts.

The present invention is defined by the appended claims.

Usually, parts are positioned at the quartz reaction chamber interior of epitaxial reactor, and it comprises and has front, the back side and the horizontal quartz plate of two sides and respectively in two vertical quartz wall at this two sides place; The front and/or rear of quartz plate bends.

Accompanying drawing explanation

Be incorporated to the part figures constituting this specification sheets herein, illustrate exemplary embodiment of the present invention and together with detailed description, these embodiments explained.In the accompanying drawings:

Fig. 1 shows the lateral cross schematic diagram of the reaction chamber of the epitaxial reactor of the parts with prior art;

Fig. 2 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor of the parts with prior art;

Fig. 3 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor of first embodiment with top droop parts;

Fig. 4 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor of second embodiment with top droop parts;

Fig. 5 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor of the first embodiment having parts and protrude erecting frame;

Fig. 6 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor of the second embodiment having parts and protrude erecting frame;

Fig. 7 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor of the 3rd embodiment having parts and protrude erecting frame;

Fig. 8 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor having parts and protrude wedge embodiment in a first scenario;

Fig. 9 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor having parts and protrude wedge embodiment in the latter case; And

Figure 10 shows the longitudinal cross-section schematic diagram of the reaction chamber of the epitaxial reactor having parts and protrude wedge embodiment in a third case.

Embodiment

Below for detailed description of illustrative embodiments with reference to the drawings.

Below describe in detail and do not limit the invention.On the contrary, scope of the present invention is defined by the appended claims.

In the embodiments of figure 3, parts 3 are arranged in the inside, quartz reaction chamber (1 of Fig. 1 and Fig. 2) of epitaxial reactor; It comprises have front, the back side and two sides (completely or substantially) level plate 30 and respectively in the quartz wall that two (completely or substantially) at two sides (parts as Fig. 1 with Fig. 2) place are vertical; The front portion 33 of plate 30 is bent upwards, thus the leading edge of plate is protruded relative to the central part of plate.

Like this, reactant gases just achieved acceleration before arrival susceptor, and, susceptor and plate and and distance between plate and upper wall can set according to the concrete needs of the technique performed in chamber.Note, these distances can affect: the upper temperature limit of susceptor, by the internal temperature of upper wall of the lowest temperature of the single or multiple substrate temperature lower limit that supports and upper temperature limit (and the temperature difference between the front surface of substrate during epitaxy and rear surface is also an important parameter of this technique), the temperature distribution of reactant gases between the lower surface of the plate of single or multiple substrate and parts, the plate of parts and upper temperature limit, reaction chamber and the hot-fluid of outside temperature and the locular wall by reaction chamber.In addition, it should be noted that the outside surface of the upper wall of reaction chamber is cooled by liquid (such as, water) stream and/or gas (such as, air) stream usually; Therefore, the outside temperature of single or multiple this streams on the upper wall of reaction chamber creates strong impact.Finally, it should be noted that the lowest temperature of parts and the temperature of reactant gases that is adjacent affect the puppet deposition on the lower surface of parts.

The central part of plate can think the square department of plate above susceptor or rectangular portion, and it extends in a lateral direction and extends between the leading edge and the trailing edge of susceptor of susceptor in a longitudinal direction between side; Central part extension in a longitudinal direction can be larger, such as, and large 0-20%.

Usual existence following three kinds may: the 1) front curvature (preferably do not carry out weld, soldering or gluing) of plate; 2) back curve (preferably do not carry out weld, soldering or gluing) of plate; 3) front and rear of plate all bends (preferably do not carry out weld, soldering or gluing).According to these three kinds possible embodiments: the longitudinal cross-section of described plate corresponds to: 1) two continuous segments; 2) two continuous segments; 3) three continuous segments.

The embodiment of Fig. 4 is similar to the embodiment of Fig. 3, and the central part (and its rear portion) of palette 30 is slightly downward-sloping, thus makes the beginning of end lower than central part of central part.

So, to the reactant gases occurred along susceptor exhaust carry out (completely or partially) compensate.

In the embodiment of Fig. 5 to Figure 10, the quartz reaction chamber (1 of Fig. 1 and Fig. 2) that parts 3 are arranged in epitaxial reactor is inner; It comprises have front, the back side and two sides (completely or substantially) level plate 30 and respectively at the wall that two (completely or substantially) at two sides (parts as Fig. 1 with Fig. 2) place are vertical; These parts comprise the device of the vertical position for adjusting plate further.

Like this, the user of reaction chamber can make the performance of parts be suitable for it easily specifically to be needed, that is, be suitable for the technique performed in chamber interior.

The embodiment of Fig. 5 to Fig. 7, this device to be positioned at below two vertical walls 31 and 32 of parts 3 by least two and the protrusion erecting frame that length corresponds to the length of two vertical walls substantially forms.

The embodiment of Fig. 5, two protrude that erecting frame 34A is very thick and extension along two vertical walls has consistent height (such as, 10mm).

The embodiment of Fig. 6, two protrude that erecting frame 34B is very thin and extension along two vertical walls has consistent height (such as, 2mm).

The embodiment of Fig. 7, two protrude erecting frame 34C have inclination upper surface and along the vicissitudinous height of extension tool (such as, be 10mm at front place, place is gradually reduced to 2mm overleaf) of two vertical walls.

One group of protrusion erecting frame that height is different and/or obliquity is different can be provided together from the single reaction chamber component for single reaction chamber.

This is favourable for providing a different set of reaction chamber component for single reaction chamber.

In the embodiment of Fig. 8 to Figure 10, this device is made up of the protrusion wedge 35 and 36 that at least four are positioned at the front and rear of two vertical walls 31 and 32 of parts 3, and these figure illustrate only a vertical wall and two wedges of parts.

In Fig. 8 to Figure 10, two vertical walls of parts have consistent height along its whole extension.Protrude wedge 35 and 36 to act on the corresponding inclined surface of vertical wall.

In fig. 8, under protrusion wedge is in the first situation, thus parts is not protruded and its plate is the level of state.

In fig .9, under protrusion wedge is in the second situation, thus parts are made to protrude (such as, as one man protruding 4mm) and its plate is the level of state.

In Fig. 10, under protrusion wedge is in the third situation, thus element portion is made to protrude (such as, protrude 4mm at front place, place is gradually reduced to protrusion 0mm overleaf) and make its plate inclined.

If front protrusion wedge 35 moves towards the center of vertical wall, then parts protrude at its front place.

If front protrusion wedge 36 moves towards the center of vertical wall, then parts protrude at its back side place.

(such as, Fig. 5 to Figure 10) " protrusion device " can utilize identical parts to realize in identical reaction chamber it should be noted that (such as, Fig. 3's and Fig. 4) " top droop " characteristic sum.

According to the part that the part design of the present invention (especially according to the embodiment just described) is the reaction chamber (reaction chamber as Fig. 1 and Fig. 2) for epitaxial reactor.

Claims (9)

1. the parts (3) that the quartz reaction chamber (1) being positioned at epitaxial reactor is inner, comprise and have front, the back side and the horizontal quartz plate (30) of two sides and respectively in two vertical quartz wall (31,32) at described two sides place;

Wherein, the front and/or rear of described plate bends.

2. parts according to claim 1 (3), wherein, only have the described front portion (33) of described plate (30) to be bent upwards, thus the leading edge of described plate are protruded relative to the central part of described plate.

3. parts according to claim 2 (3), wherein, the described central part of described plate (30) is slightly downward-sloping, thus makes the end of described central part lower than the beginning of described central part.

4. parts according to claim 1 (3), wherein, the longitudinal cross-section of described plate (30) corresponds to a section or two continuous segments or three continuous segments.

5. parts according to claim 1 (3), also comprise the device (34,35,36) of the vertical position for adjusting described plate (30).

6. parts according to claim 5 (3), wherein, described device is positioned at described two vertical walls (31,32) below by least two and the protrusion erecting frame (34A, 34B, 34C) of length that length corresponds to described two vertical walls (31,32) forms.

7. parts according to claim 5 (3), wherein, described device (35,36) is made up of the protrusion wedge (35,36) that at least four are positioned at the front and rear of described two vertical walls (31,32).

8., for a reaction chamber for epitaxial reactor, comprise parts according to any one of claim 1 to 7.

9. an epitaxial reactor, comprises parts according to any one of claim 1 to 7.