CN204859649U - Driver chip and drive circuit based on on -off control LED adjusts luminance to mix colours and reviews - Google Patents
Driver chip and drive circuit based on on -off control LED adjusts luminance to mix colours and reviews Download PDFInfo
- Publication number
- CN204859649U CN204859649U CN201520534022.6U CN201520534022U CN204859649U CN 204859649 U CN204859649 U CN 204859649U CN 201520534022 U CN201520534022 U CN 201520534022U CN 204859649 U CN204859649 U CN 204859649U
- Authority
- CN
- China
- Prior art keywords
- connects
- driving chip
- electric capacity
- resistance
- output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Landscapes
- Led Devices (AREA)
Abstract
The utility model relates to an in the adjust luminance driver chip of mixing of colors temperature of on -off control LED, driver chip includes that reference voltage produces the circuit, the transfer gate array, and the transfer gate, voltage comparison circuit, decoding circuit and memory electric capacity, reference voltage produces the output of circuit and connects the one end of transfer gate array, the other end of transfer gate array is connected the one end of transfer gate, the other end of transfer gate is connected voltage comparison circuit's input and memory electric capacity, voltage comparison circuit's output is connected decoding circuit's input, decoding circuit's output is connected the control end of transfer gate array. The mixing of colors temperature function of adjusting luminance of this chip does not rely on the control unit such as outside MCU, wireless remote control or other light modulators, has simplified the peripheral of system and has used, has reduced the cost of system, can effectively promote the popularization of LED lamps and lanterns in the mixing of colors temperature system that adjusts luminance.
Description
Technical field
The utility model belongs to LED Drive Control Technique field, particularly relates to a kind of driving chip based on switch control rule LED light modulation color-temperature regulating.
Background technology
LED is efficient with it, energy-saving and environmental protection and the life-span is long etc. that advantage receives increasing concern, and LED lamp progressively instead of traditional fluorescent lamp as a kind of novel green light source.In lighting field, due to the needs of application scenario, different requirements is proposed to the color of LED lamplight and brightness.Such as in the public place such as commercial entertainment, office, zones of different, to light colour temperature and brightness demand just difference, even same functional area, also also exists different brightness and colour temperature needs in the different time periods.For this needs, occur on the market controlling based on MCU, the various light modulation color-temperature regulating system schemas controlling based on Digiplex or control based on other external dimmer.But above-mentioned various system schema, peripheral structure is complicated, realizes cost general higher, is unfavorable for the popularization of LED light modulation color-temperature regulating light fixture.
Utility model content
The purpose of this utility model is to provide a kind of driving chip based on switch control rule LED light modulation color-temperature regulating, is intended to solve various light modulation color-temperature regulating system schema complexity higher, the problem that cost is higher.
The utility model is achieved in that a kind of driving chip based on switch control rule LED light modulation color-temperature regulating, and described driving chip comprises generating circuit from reference voltage, transmission gate array, transmission gate, voltage comparator circuit, decoding circuit and memory electric capacity.The output of described generating circuit from reference voltage connects one end of described transmission gate array, the other end of described transmission gate array connects described transmission gate, the other end of described transmission gate connects input and the memory electric capacity of described voltage comparator circuit, the output of described voltage comparator circuit connects the input of described decoding circuit, the output of described decoding circuit connects the control end of described transmission gate array, and one end of described memory electric capacity connects one end of described transmission gate and the input of voltage comparator circuit; Described generating circuit from reference voltage, utilizes the reference voltage of feedback loop and chip internal, produces different reference voltage levels and exports to voltage comparator circuit and memory electric capacity; Transmission gate array, for giving memory electric capacity at each system electrification backgating one road voltage reference value; Voltage comparator circuit, compares with the voltage of memory electric capacity record for the magnitude of voltage exported with reference to voltage generation circuit, exports to decoding circuit after the outcome record compared being stored; Decoding circuit, for the treatment of the signal that voltage comparator circuit exports, judges the number of times that powers on of chip according to signal, export corresponding status signal and select output end signal passage and the gating of controls transfer gate array; Memory electric capacity, for recording the road reference voltage level obtained by transmission gate array gating after each chip powers on.
Further technical scheme of the present utility model is: power-off and the time interval again powered on of described memory electric capacity should be less than the complete discharge time of described memory electric capacity.
Further technical scheme of the present utility model is: described generating circuit from reference voltage comprises error amplifier EA, metal-oxide-semiconductor P1, electric resistance partial pressure module, the input of described electric resistance partial pressure module connects the source electrode of described metal-oxide-semiconductor P1 and the positive input of error amplifier EA respectively, and the output of described error amplifier EA connects the grid of described metal-oxide-semiconductor P1.。
Further technical scheme of the present utility model is: described transmission gate array comprises the single transmission gate of multiple parallel join, and the number of described single transmission gate is equal with the number of times of load cycle state.
Further technical scheme of the present utility model is: described voltage comparator circuit comprises multiple comparing unit, multiple described comparing unit parallel join, described comparing unit comprises comparator and memory, the output of described comparator connects the input of described memory, and the number of described comparing unit is that the number of times of load cycle state subtracts 1.
Further technical scheme of the present utility model is: the output channel number of described decoding circuit is equal with the number of times of load cycle state.
Another object of the present utility model is to provide a kind of drive circuit based on driving chip, described drive circuit comprises K switch 1, rectification module, first module, second module, LED string 1, LED string 2 and driving chip, one end of described K switch 1 connects the input of described rectification module, the output of described rectification module connects the input of described driving chip, the output of described driving chip connects the input of described first module and the input of the second module respectively, the output of described first module connects described LED string 1, the output of described second module connects described LED string 2, the other end of described K switch 1 connects civil power.
Further technical scheme of the present utility model is: described rectification module comprises rectifier bridge, electric capacity C1, resistance RST and electric capacity C2, the output of described rectifier bridge connects one end of described electric capacity C1 and one end of resistance RST respectively, the other end of described resistance RST connects the VCC pin of described driving chip, the other end of described resistance RST through described electric capacity C2 ground connection, the other end ground connection of described electric capacity C1.
Further technical scheme of the present utility model is: described first module is identical with the structure of described second module, it comprises metal-oxide-semiconductor M1, diode D1, inductance L 1, resistance R1L and electric capacity C1L, the grid of described metal-oxide-semiconductor M1 connects the GATE1 pin of described driving chip, the source electrode of described metal-oxide-semiconductor M1 connects the OUT1 pin of described driving chip, the drain electrode of described metal-oxide-semiconductor M1 connects one end of described inductance L 1 and the anode of diode D1 respectively, the other end of described inductance L 1 connects one end of described resistance R1L respectively, one end of electric capacity C1L and one end of LED string 1, the other end of described LED string 1 connects the other end of electric capacity C1 respectively, the other end of resistance R1L, the negative electrode of diode D1 and one end of LED string 2.
Further technical scheme of the present utility model is: this drive circuit also comprises resistance RCS1, resistance ROVP1, electric capacity C3, resistance ROVP2 and resistance RCS2, the CS1 pin of described driving chip is through resistance RCS1 ground connection, the ROVP1 pin of described driving chip is through resistance ROVP1 ground connection, the CAP foot meridian capacitor C3 ground connection of described driving chip, the ROVP2 of described driving chip is through resistance ROVP2 ground connection, the CS2 pin of described driving chip is through resistance RCS2 ground connection, the GND pin ground connection of described driving chip, MODE pin ground connection four kinds of recurrent states of described driving chip or unsettled three kinds of recurrent states.
The beneficial effects of the utility model are: the light modulation color-temperature regulating of this chip does not rely on the control units such as outside MCU, wireless remote control or other dimmer, simplify the peripheral applications of system, reduce the cost of system, effectively can promote the popularization of LED lamp in light modulation color-temperature regulating system.
Accompanying drawing explanation
Fig. 1 is the integrated circuit schematic diagram of the driving chip that the utility model embodiment provides;
Fig. 2 is the system electrification that provides of the utility model embodiment and output status signal schematic diagram;
Fig. 3 is a kind of driving circuit principle figure based on driving chip that the utility model embodiment provides.
Embodiment
Fig. 1 shows the driving chip based on switch control rule LED light modulation color-temperature regulating that the utility model provides, described driving chip comprises generating circuit from reference voltage, transmission gate array, transmission gate, voltage comparator circuit, decoding circuit and memory electric capacity, the output of described generating circuit from reference voltage connects one end of described transmission gate array, the other end of described transmission gate array connects one end of described transmission gate, the other end of described transmission gate connects input and the memory electric capacity of described voltage comparator circuit, the output of described voltage comparator circuit connects the input of described decoding circuit, the output of described decoding circuit connects the control end of described transmission gate array, described generating circuit from reference voltage, utilize the reference voltage of feedback loop and chip internal, produce different reference voltage levels and export to voltage comparator circuit and memory electric capacity, transmission gate array, for giving memory electric capacity at each system electrification backgating one road voltage reference value, voltage comparator circuit, compares with the voltage of memory electric capacity record for the magnitude of voltage exported with reference to voltage generation circuit, exports to decoding circuit after the outcome record compared being stored, decoding circuit, for the treatment of the signal that voltage comparator circuit exports, judges the number of times that powers on of chip according to signal, export corresponding status signal and select output end signal passage and the gating of controls transfer gate array, memory electric capacity, for recording the road reference voltage level obtained by transmission gate array gating after each chip powers on.
The light modulation color-temperature regulating of this chip does not rely on the control units such as outside MCU, wireless remote control or other dimmer, simplifies the peripheral applications of system, reduces the cost of system, effectively can promote the popularization of LED lamp in light modulation color-temperature regulating system.
Power-off and the time interval again powered on of described memory electric capacity should be less than the complete discharge time of described memory electric capacity.
Driving chip according to claim 2, it is characterized in that, described generating circuit from reference voltage comprises error amplifier EA, metal-oxide-semiconductor P1, electric resistance partial pressure module, the input of described electric resistance partial pressure module connects the source electrode of described metal-oxide-semiconductor P1 and the positive input of error amplifier EA respectively, and the output of described error amplifier EA connects the grid of described metal-oxide-semiconductor P1.Described electric resistance partial pressure module connects the drain electrode of metal-oxide-semiconductor P1, the input of error amplifier EA and one end of described transmission gate array.
Described transmission gate array comprises the single transmission gate of multiple parallel join, and the number of described single transmission gate is equal with the number of times of load cycle state.The recurrent state that the number of transmission gate sets as required decides, that is, when recurrent state number is N, need N number of parallel transmission gate.The control end of transmission gate array connects with the output of decoder.Transmission gate array TG1 to TG4 shown in Fig. 1 is after each chip powers on, one is only had to be that conducting is (because that the conducting of controls transfer door is state control signal S1 to the S4 exported by decoding circuit, it is level"1" that these four signals only have one after each chip powers on, and its excess-three is all level "0").So these four reference voltages of V1 to V4 are when powering at every turn, only have one of them can be passed to above memory electric capacity C3 by transmission gate.
Described voltage comparator circuit comprises multiple comparing unit, multiple described comparing unit parallel join, described comparing unit comprises comparator and memory, and the output of described comparator connects the input of described memory, and the number of described comparing unit is that the number of times of load cycle state subtracts 1.
The output channel number of described decoding circuit is equal with the number of times of load cycle state.
Fig. 3 shows another object of the present utility model and is to provide a kind of drive circuit based on driving chip, described drive circuit comprises K switch 1, rectification module, first module, second module, LED string 1, LED string 2 and driving chip, one end of described K switch 1 connects the input of described rectification module, the output of described rectification module connects the input of described driving chip, the output of described driving chip connects the input of described first module and the input of the second module respectively, the output of described first module connects described LED string 1, the output of described second module connects described LED string 2, the other end of described K switch 1 connects civil power.
Described rectification module comprises rectifier bridge, electric capacity C1, resistance RST and electric capacity C2, the output of described rectifier bridge connects one end of described electric capacity C1 and one end of resistance RST respectively, the other end of described resistance RST connects the VCC pin of described driving chip, the other end of described resistance RST through described electric capacity C2 ground connection, the other end ground connection of described electric capacity C1.
Described first module is identical with the structure of described second module, it comprises metal-oxide-semiconductor M1, diode D1, inductance L 1, resistance R1L and electric capacity C1L, the grid of described metal-oxide-semiconductor M1 connects the GATE1 pin of described driving chip, the source electrode of described metal-oxide-semiconductor M1 connects the OUT1 pin of described driving chip, the drain electrode of described metal-oxide-semiconductor M1 connects one end of described inductance L 1 and the anode of diode D1 respectively, the other end of described inductance L 1 connects one end of described resistance R1L respectively, one end of electric capacity C1L and one end of LED string 1, the other end of described LED string 1 connects the other end of electric capacity C1 respectively, the other end of resistance R1L, the negative electrode of diode D1 and one end of LED string 2.
This drive circuit also comprises resistance RCS1, resistance ROVP1, electric capacity C3, resistance ROVP2 and resistance RCS2, the CS1 pin of described driving chip is through resistance RCS1 ground connection, the ROVP1 pin of described driving chip is through resistance ROVP1 ground connection, the CAP foot meridian capacitor C3 ground connection of described driving chip, the ROVP2 of described driving chip is through resistance ROVP2 ground connection, the CS2 pin of described driving chip is through resistance RCS2 ground connection, the GND pin ground connection of described driving chip, MODE pin ground connection four kinds of recurrent states of described driving chip or unsettled three kinds of recurrent states.When MODE pin ground connection, chip circulates under this one of four states of S1 to S4; If when MODE pin connects high level, do not have this state of S4, chip only circulates under these three states of S1 to S3.
Integrated circuit is being manufactured in process and can incidentally formed parasitic PN junction.These PN junctions are all be in back-biased state, can't affect the normal work of chip circuit.When power supply (namely do not give chip or system provide) after electricity under chip or system, in chip, the electric charge of each node all can be fallen by reverse PN junction electric leakage disappearance, and the lower exactly electric posterior nodal point voltage of the phenomenon externally showed reduces gradually.The utility model is exactly this feature utilizing reverse biased pn junction automatically to leak electricity, design the voltage assignment circuit of memory Nodes, the voltage comparator circuit of memory Nodes and coding and decoding circuit judge the power-on and power-off number of times of chip or system, drive framework in conjunction with twin-channel LED constant current again, the light modulation color-temperature regulating function of LED lamp can be realized.
In Fig. 1, VBG is the reference voltage of chip internal.EA error amplifier, P1(MOS manage) and electric resistance partial pressure module jointly form generating circuit from reference voltage, it can produce V1, V2, V3, V4, the magnitude of voltage that VC1, VC2, VC3 etc. are different.TG1, TG2, TG3, TG4 are four transmission gates, and they are carried out the Push And Release of controls transfer door respectively by status signal S4, S1, S2, S3.VCC_ON represents the signal that chip system powers on, and when a system is powered up, VCC_ON is level"1", transmission gate TG0 conducting, and under system during electricity, VCC_ON is level "0", and TG0 closes.VC1, VC2, VC3 are three and judge comparative voltage, for making comparisons with the voltage of memory Nodes, outcome record is relatively in memory, after the process of decoding circuit, the number of times that powers on of chip can be judged, and export corresponding status signal S1, S2, S3, S4 to characterize the number of times that powers on of chip.Namely when S1 is level"1", represent that chip system powers on first time, when S2 is level"1", represent that chip system is that second time powers on, the like.The specific works principle of this module is described as follows: when chip first time powers on, memory Nodes does not almost have charge storage, therefore this place's node voltage is very low, it with export 000 signal after VC1, VC2, VC3, through decoding circuit process, S1 signal is overturn as level"1" (S2, S3, S4 still keep low level).After S1 becomes level"1", make TG2 conducting, so the electric capacity C3 of memory Nodes is charged to V2, and maintain this level during system works always.When after electricity under chip, VCC_ON signal becomes low level, is closed by TG0.Under chip system, electricity during this period of time, owing to remembering the reverse biased pn junction electric leakage of Nodes, causes this place voltage V2 to decline gradually in time.If within memory time, chip powers on again, the voltage at this place with export an other group coding after VC1, VC2, VC3, after decoding circuit process, S2 signal is made to overturn as level"1" (S1, S3, S4 keep low level), make TG3 conducting, so the electric capacity C3 of memory Nodes is charged to V3.Chip so power-on and power-off repeatedly, just can produce the status signal that S1, S2, S3, S4, S1 circulate like this, as shown in Figure 2 successively.In fig. 2, when UVLO_COMP signal is high level, represent system electrification, when UVLO_COMP signal is low level, electricity under expression system.System often powers on once, and UVLO-COMP becomes high level, and this one of four states signal of S1, S2, S3, S4 just has one to become high level.These 4 status signals are applied in twin-channel LED constant current drive system, just can realize the effect of LED lamp light modulation color-temperature regulating.Because the parasitic capacitance of chip internal memory Nodes is very little, its electric charge disappearance of leaking electricity in a short period of time of preserving is fallen, and causes state memorization to lose efficacy, therefore can draw a pin to chip, adopt external capacitor to carry out stored charge, thus extend the on off state memory time of chip.
Electric capacity memory module is implanted in a twin-channel non-isolated voltage-dropping type LED constant current driving chip, the light modulation color-temperature regulating scheme of LED lamp can be realized, see Fig. 3.Components and parts in scheme are described as follows: electric main is by powering to two string LED after switch and rectifier bridge, and lamp string 1 is candoluminescence pearl, and lamp string 2 is yellow warm light pearl; C1 is bus capacitor; RST is starting resistance; C2 is start-up capacitance; C3 is on off state store-memory electric capacity; C1L, C2L are load capacitance, and R1L, R2L are dummy resistance; L1, L2 are inductance; D1, D2 are fly-wheel diode; M1, M2 are the high-voltage power pipe (accessible site chip internal) of two passages; RCS1, RCS2 are current-limiting resistance, can be arranged through separately the size of current of each street lamp string; ROVP1, ROVP2 are overvoltage protection setting resistance, can set the magnitude of voltage of overvoltage protection, also can be integrated in chip internal.
The number of times that powers on of system can be realized by the electric capacity memory module of built-in chip type, sees Fig. 3.Such as, after system first time powers on, decoding module output state control signal S1 is high level, and the passage one in control chip works, so lamp string 1 sends candoluminescence; System second time powers on, and decoding module output state control signal S2 is high level, and the passage two in control chip works, so lamp string 2 sends Huang Nuanguang; System third time power on, decoding module output state control signal S3 is high level, and the passage one in control chip, passage two work simultaneously, so lamp string 1 and lamp string 2 entirely bright, send mixing photochromic; System powers on for the 4th time, and decoding module output state control signal S4 is high level, while the work of the passage one in control chip, passage two, again in conjunction with PWM light modulation, or simulation light modulation, lamp string 1 and lamp string 2 can be allowed to produce another brightness, namely achieve the object of light modulation.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.
Claims (10)
1. the driving chip based on switch control rule LED light modulation color-temperature regulating, it is characterized in that, described driving chip comprises generating circuit from reference voltage, transmission gate array, transmission gate, voltage comparator circuit, decoding circuit and memory electric capacity, the output of described generating circuit from reference voltage connects one end of described transmission gate array, the other end of described transmission gate array connects one end of described transmission gate, the other end of described transmission gate connects input and the memory electric capacity of described voltage comparator circuit, the output of described voltage comparator circuit connects the input of described decoding circuit, the output of described decoding circuit connects the control end of described transmission gate array, described generating circuit from reference voltage, utilize the reference voltage of feedback loop and chip internal, produce different reference voltage levels and export to voltage comparator circuit and memory electric capacity, transmission gate array, for giving memory electric capacity at each system electrification backgating one road voltage reference value, voltage comparator circuit, compares with the voltage of memory electric capacity record for the magnitude of voltage exported with reference to voltage generation circuit, exports to decoding circuit after the outcome record compared being stored, decoding circuit, for the treatment of the signal that voltage comparator circuit exports, judges the number of times that powers on of chip according to signal, export corresponding status signal and select output end signal passage and the gating of controls transfer gate array, memory electric capacity, for recording the road reference voltage level obtained by transmission gate array gating after each chip powers on.
2. driving chip according to claim 1, is characterized in that, power-off and the time interval again powered on of described memory electric capacity should be less than the complete discharge time of described memory electric capacity.
3. driving chip according to claim 2, it is characterized in that, described generating circuit from reference voltage comprises error amplifier EA, metal-oxide-semiconductor P1, electric resistance partial pressure module, the input of described electric resistance partial pressure module connects the source electrode of described metal-oxide-semiconductor P1 and the positive input of error amplifier EA respectively, and the output of described error amplifier EA connects the grid of described metal-oxide-semiconductor P1.
4. driving chip according to claim 3, is characterized in that, described transmission gate array comprises the single transmission gate of multiple parallel join, and the number of described single transmission gate is equal with the number of times of load cycle state.
5. driving chip according to claim 4, it is characterized in that, described voltage comparator circuit comprises multiple comparing unit, multiple described comparing unit parallel join, described comparing unit comprises comparator and memory, the output of described comparator connects the input of described memory, and the number of described comparing unit is that the number of times of load cycle state subtracts 1.
6. driving chip according to claim 5, is characterized in that, the output channel number of described decoding circuit is equal with the number of times of load cycle state.
7. the drive circuit based on driving chip described in any one of claim 1-6, it is characterized in that, described drive circuit comprises K switch 1, rectification module, first module, second module, LED string 1, LED string 2 and the driving chip described in any one of claim 1-6, one end of described K switch 1 connects the input of described rectification module, the output of described rectification module connects the input of described driving chip, the output of described driving chip connects the input of described first module and the input of the second module respectively, the output of described first module connects described LED string 1, the output of described second module connects described LED string 2, the other end of described K switch 1 connects civil power.
8. driving chip according to claim 7, it is characterized in that, described rectification module comprises rectifier bridge, electric capacity C1, resistance RST and electric capacity C2, the output of described rectifier bridge connects one end of described electric capacity C1 and one end of resistance RST respectively, the other end of described resistance RST connects the VCC pin of described driving chip, the other end of described resistance RST through described electric capacity C2 ground connection, the other end ground connection of described electric capacity C1.
9. driving chip according to claim 8, it is characterized in that, described first module is identical with the structure of described second module, it comprises metal-oxide-semiconductor M1, diode D1, inductance L 1, resistance R1L and electric capacity C1L, the grid of described metal-oxide-semiconductor M1 connects the GATE1 pin of described driving chip, the source electrode of described metal-oxide-semiconductor M1 connects the OUT1 pin of described driving chip, the drain electrode of described metal-oxide-semiconductor M1 connects one end of described inductance L 1 and the anode of diode D1 respectively, the other end of described inductance L 1 connects one end of described resistance R1L respectively, one end of electric capacity C1L and one end of LED string 1, the other end of described LED string 1 connects the other end of electric capacity C1 respectively, the other end of resistance R1L, the negative electrode of diode D1 and one end of LED string 2.
10. driving chip according to claim 9, it is characterized in that, this drive circuit also comprises resistance RCS1, resistance ROVP1, electric capacity C3, resistance ROVP2 and resistance RCS2, the CS1 pin of described driving chip is through resistance RCS1 ground connection, the ROVP1 pin of described driving chip is through resistance ROVP1 ground connection, the CAP foot meridian capacitor C3 ground connection of described driving chip, the ROVP2 of described driving chip is through resistance ROVP2 ground connection, the CS2 pin of described driving chip is through resistance RCS2 ground connection, the GND pin ground connection of described driving chip, MODE pin ground connection four kinds of recurrent states of described driving chip or unsettled three kinds of recurrent states.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520534022.6U CN204859649U (en) | 2015-07-22 | 2015-07-22 | Driver chip and drive circuit based on on -off control LED adjusts luminance to mix colours and reviews |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520534022.6U CN204859649U (en) | 2015-07-22 | 2015-07-22 | Driver chip and drive circuit based on on -off control LED adjusts luminance to mix colours and reviews |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204859649U true CN204859649U (en) | 2015-12-09 |
Family
ID=54750157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520534022.6U Withdrawn - After Issue CN204859649U (en) | 2015-07-22 | 2015-07-22 | Driver chip and drive circuit based on on -off control LED adjusts luminance to mix colours and reviews |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204859649U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105007657A (en) * | 2015-07-22 | 2015-10-28 | 深圳市富满电子集团股份有限公司 | Drive chip having switch control-based LED light-adjusting and color-temperature-adjusting function and drive circuit |
| CN108093507A (en) * | 2017-05-09 | 2018-05-29 | 宁波灿祥光电有限公司 | A kind of band memory adjustable color temperature, brightness LED illumination control circuit |
| CN110896575A (en) * | 2019-12-17 | 2020-03-20 | 常州机电职业技术学院 | LED three-section voltage display circuit and LED display method |
-
2015
- 2015-07-22 CN CN201520534022.6U patent/CN204859649U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105007657A (en) * | 2015-07-22 | 2015-10-28 | 深圳市富满电子集团股份有限公司 | Drive chip having switch control-based LED light-adjusting and color-temperature-adjusting function and drive circuit |
| CN108093507A (en) * | 2017-05-09 | 2018-05-29 | 宁波灿祥光电有限公司 | A kind of band memory adjustable color temperature, brightness LED illumination control circuit |
| CN108093507B (en) * | 2017-05-09 | 2019-10-25 | 宁波灿祥光电有限公司 | A kind of band memory adjustable color temperature, brightness LED illumination control circuit |
| CN110896575A (en) * | 2019-12-17 | 2020-03-20 | 常州机电职业技术学院 | LED three-section voltage display circuit and LED display method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105007657B (en) | The driving chip and drive circuit of color-temperature regulating are dimmed based on switch control LED | |
| CN105101543B (en) | Led drive circuit | |
| CN205961524U (en) | LED constant current drive chip, device and LED lamp | |
| CN206061200U (en) | A kind of bluetooth lamp affixed to the ceiling | |
| CN205961497U (en) | Bluetooth ball bubble lamp | |
| CN205961495U (en) | Blue tooth surface board lamp | |
| CN205232499U (en) | LED lamp convenient to adjust luminance | |
| CN204761800U (en) | 2. 4G intelligent LED control system | |
| CN204859649U (en) | Driver chip and drive circuit based on on -off control LED adjusts luminance to mix colours and reviews | |
| CN104333934A (en) | LED illumination driving circuit | |
| CN107514585A (en) | A kind of Bluetooth audio device ceiling lamp | |
| CN206650895U (en) | A kind of tunable optical color-adjustable RGB LEDs of direct current supply | |
| CN202603016U (en) | Driving circuit of LED (light-emitting diode) fluorescent lamp with adjustable light | |
| CN107567144A (en) | Toning controller, toning control chip and light modulation toning LED drive control circuits | |
| CN214507416U (en) | Red, green, blue, white and yellow RGBWY multicolor temperature full-spectrum LED intelligent lamp | |
| CN204437827U (en) | A kind of all-colour LED bedside desk lamp with remote control | |
| CN102869157A (en) | Method for setting color of LED (light-emitting diode) lamp by on-off encoding of power supply switch | |
| CN209824090U (en) | LED drive control circuit compatible with wireless dimming and color modulation and wall switch color modulation | |
| CN112235904A (en) | Intelligent control system for color changing LED lamp | |
| CN103648223A (en) | Multi-channel light-emitting diode (LED) linear driver | |
| CN207491270U (en) | LED light control circuit and LED light | |
| CN206402488U (en) | One kind light modulation toning control circuit and LED illumination product | |
| CN205987465U (en) | Improved generation solar lamp cluster | |
| CN201657436U (en) | LED lamp light control device | |
| CN210986496U (en) | Switch sectional color-adjusting light-adjusting constant-current controller integrated circuit, device and lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151209 Effective date of abandoning: 20170704 |