CN204809186U - Micro - device of nano -material scanning electron - Google Patents
Micro - device of nano -material scanning electron Download PDFInfo
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- CN204809186U CN204809186U CN201520388491.1U CN201520388491U CN204809186U CN 204809186 U CN204809186 U CN 204809186U CN 201520388491 U CN201520388491 U CN 201520388491U CN 204809186 U CN204809186 U CN 204809186U
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- scanning electron
- nano material
- material scanning
- electron microscopy
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Abstract
The utility model relates to a micro - device of nano -material scanning electron, including scanning generator (1), picture tube (2), enlarged converter (3), amplifier (4), collector (5), test sample table (6), filament (7) and a plurality of lens, amplifier (4) are connected with picture tube (2), collector (5) and test sample table (6) respectively, and a plurality of lens settings are in filament (7) below. The utility model provides a micro - device of nano -material scanning electron has the resolution ratio height, the depth of field is long, and the field of vision is wide, the image is rich in characteristics such as third dimension.
Description
Technical field
The utility model relates to a kind of device for observation analysis new material molecule or atom magnitude, particularly relates to a kind of nano material scanning electron microscopy device, belongs to Fiber electron apparatus field.
Background technology
Nano material refers to the material having at least the size of a dimension to be less than 100nm or to be made up of as elementary cell them in three dimensions.Because its size is close to the coherence length of electronics, great changes will take place because the strong relevant self-organizing brought makes character for its character, and the character as optics, calorifics, electricity, magnetics, mechanics and chemical aspect is compared will have significant difference with block materials.So nanoscale and the special change of performance are two essential characteristics that nano material must possess simultaneously.
The effects such as the quantum size effect of semiconductor nano material and surface and interface, make it show unique optical characteristics, as optics photism, absorb band edge blue shift, excitonic luminescence etc.Especially II-VI group monodimension nanometer material, they are wide direct gap semiconductor materials, are typical photoelectric semiconductor materials.Bandgap semiconductor material is typical photoelectric semiconductor material.Be (CdSe) example with cadmium selenide, as one of typical photoelectric semiconductor material, itself there is unique optical and electrical properties, having broad application prospects as in light source, light absorption, fiber waveguide, luminescence generated by light and opto-electronic conversion etc.
The domestic device being used for preparing semiconductor nano material associated sample specially that there is no maturation, does not have supporting tester yet at present.
Utility model content
In order to overcome the deficiencies in the prior art, resolving the problem of prior art, making up the deficiency of existing existing product in the market.
The utility model provides a kind of nano material scanning electron microscopy device, mainly comprise sweeping generator, picture tube, magnification changer, amplifier, gatherer, sample bench, filament and multiple lens, described amplifier is connected with picture tube, gatherer and sample bench respectively, and multiple lens are arranged on below filament.
Preferably, above-mentioned multiple lens comprise the first lens, the second lens and the 3rd lens.
Preferably, above-mentioned first lens, the second lens and the 3rd lens are electromagnetic lens.
Preferably, grid and anode is disposed with below above-mentioned filament.
Preferably, above-mentioned multiple lens are placed successively from top to bottom.
Preferably, above-mentioned gatherer and sample bench correspondence are arranged.
The nano material scanning electron microscopy device that the utility model provides, has that resolution is high, the depth of field is long, and looking away, image are rich in the features such as third dimension.
Accompanying drawing explanation
Fig. 1 is the utility model structural representation.
Reference numeral: 1-sweeping generator; 2-picture tube; 3-magnification changer; 4-amplifier; 5-gatherer; 6-sample bench; 7-filament; 8-grid; 9-anode; 10-first lens; 11-second lens; 12-the 3rd lens.
Embodiment
Understand for the ease of those of ordinary skill in the art and implement the utility model, below in conjunction with the drawings and the specific embodiments, the utility model being described in further detail.
The nano material scanning electron microscopy device that the utility model provides, mainly comprise sweeping generator 1, picture tube 2, magnification changer 3, amplifier 4, gatherer 5, sample bench 6, filament 7 and multiple lens, amplifier 4 is connected with picture tube 2, gatherer 5 and sample bench 6 respectively, and multiple lens are arranged on below filament 7.Multiple lens comprise the first lens 10, second lens 11 and the 3rd lens 12.First lens 10, second lens 11 and the 3rd lens 12 are electromagnetic lens.
Grid 8 and anode 9 is disposed with below filament 7.Multiple lens are placed successively from top to bottom.Gatherer 5 and sample bench 6 correspondence are arranged.
The nano material scanning electron microscopy device that the utility model provides can the various images of show sample, and be different from the amplification imaging of electromagnetic lens, imaging mode of the present utility model is similar to the shooting imaging of TV.Operation principle can be summarized as simply " raster scan, pointwise imaging ".Be specially: from three grades of gun cathode divergent bundles (being generally 50 μm), after the accelerating voltage (2 ~ 30kV) between anode and cathode, focused on by condenser and object lens, form beam spot (about 10nm) and be then irradiated to sample surfaces.Electron microprobe is by the effect of scanning coil, raster-like scanning (grid stroke bar number depends on line scanning and frame scan speed) is done at sample surfaces, when incident electron gets to sample surfaces, sample heat energy is transformed into by there being the incident electron energy of more than 99%, the incident electron energy of about 1%, excited sample is produced various useful information, comprise secondary electron, backscattered electron and X ray etc., different information, from sample obtain the intensity of various information and distribution separately with specimen surface pattern, composition, some physical propertys of crystal orientation and surface state are (as electrical property, magnetic property etc.) etc. factor relevant.
As shown in Figure 1, be theory structure schematic diagram of the present utility model,
The multiplication factor of scan image is defined as:.
L is the phosphor screen size of picture tube; 1 is electron beam scanning distance on sample.
The nano material scanning electron microscopy device that the utility model provides has following characteristics: resolution is high, the depth of field is long, and looking away, image are rich in third dimension etc.
The embodiment of the above is better embodiment of the present utility model; not limit concrete practical range of the present utility model with this; scope of the present utility model comprises and is not limited to this embodiment, and the equivalence change that all shapes according to the utility model, structure are done is all in protection range of the present utility model.
Claims (6)
1. a nano material scanning electron microscopy device, it is characterized in that: described nano material scanning electron microscopy device mainly comprises sweeping generator (1), picture tube (2), magnification changer (3), amplifier (4), gatherer (5), sample bench (6), filament (7) and multiple lens, described amplifier (4) is connected with picture tube (2), gatherer (5) and sample bench (6) respectively, and multiple lens are arranged on filament (7) below.
2. nano material scanning electron microscopy device according to claim 1, is characterized in that: described multiple lens comprise the first lens (10), the second lens (11) and the 3rd lens (12).
3. nano material scanning electron microscopy device according to claim 2, is characterized in that: described first lens (10), the second lens (11) and the 3rd lens (12) are electromagnetic lens.
4. nano material scanning electron microscopy device according to claim 1, is characterized in that: described filament (7) below is disposed with grid (8) and anode (9).
5. nano material scanning electron microscopy device according to claim 1, is characterized in that: described multiple lens are placed successively from top to bottom.
6. nano material scanning electron microscopy device according to claim 1, is characterized in that: described gatherer (5) and sample bench (6) correspondence are arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520388491.1U CN204809186U (en) | 2015-06-03 | 2015-06-03 | Micro - device of nano -material scanning electron |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520388491.1U CN204809186U (en) | 2015-06-03 | 2015-06-03 | Micro - device of nano -material scanning electron |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204809186U true CN204809186U (en) | 2015-11-25 |
Family
ID=54593965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520388491.1U Expired - Fee Related CN204809186U (en) | 2015-06-03 | 2015-06-03 | Micro - device of nano -material scanning electron |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204809186U (en) |
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2015
- 2015-06-03 CN CN201520388491.1U patent/CN204809186U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151125 Termination date: 20160603 |