CN204793614U - Semiconductor laser drive circuit - Google Patents
Semiconductor laser drive circuit Download PDFInfo
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- CN204793614U CN204793614U CN201520470926.7U CN201520470926U CN204793614U CN 204793614 U CN204793614 U CN 204793614U CN 201520470926 U CN201520470926 U CN 201520470926U CN 204793614 U CN204793614 U CN 204793614U
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Abstract
The utility model discloses a semiconductor laser drive circuit, including power input connector circuit, main power circuit, auxiliary power circuit, constant -current source circuit and circuit output interface. The power input connector circuit is connected with main power circuit's external power source input electricity, auxiliary power circuit and power input connector circuit connection, main power circuit, auxiliary power circuit are connected to the constant -current source circuit electricity, the circuit output interface is connected with main power circuit, auxiliary power circuit, constant -current source circuit electricity. The utility model is not only simple in structure, it is small, easy and other system integrations, power is adjustable in addition, and the stable performance is reliable, and conversion efficiency is high, realizes taking the initiative through heat dissipation control circuit and dispels the heat, has effectively reduced power calorific capacity, guarantees the output of power high efficiency, it is anti -interference strong, do not receive external disturbance among the practical application, not impact systems's electromagnetic radiation environment.
Description
Technical field
The utility model relates to semiconductor laser electronic circuit technology field, particularly relates to a kind of semiconductor laser device driving circuit.
Background technology
Semiconductor laser, also known as laser diode, is with the laser of semi-conducting material as operation material.Due to the difference in the structure of matter, the lasing detailed process of variety classes is more special.Conventional operation material has GaAs, cadmium sulfide, indium phosphide, zinc sulphide etc.Energisation mode has electrical pumping, electron beam excitation and optical pumping three kinds of forms.Semiconductor laser device, can be divided into homojunction, single heterojunction, double heterojunction etc. several.Homojunction laser and single heterojunction laser mostly are pulse device when room temperature, and can realize continuous operation during double heterojunction laser room temperature.Semiconductor laser is the ripe class laser comparatively early, to make fast progress, and its range of application covers whole opto-electronics, has become the core technology of current photoelectron science.But the current ubiquity of drive circuit of conventional semiconductor laser is not enough as follows: one, complex structure, and volume is large, cause the volume of semiconductor laser large, not portable, with other system integration difficulty; Two, power is non-adjustable, and unstable, power is little, and heat dispersion is poor, and conversion efficiency is low.
Utility model content
The purpose of this utility model is by a kind of semiconductor laser device driving circuit, solves the problem that above background technology part is mentioned.
For reaching this object, the utility model by the following technical solutions:
A kind of semiconductor laser device driving circuit, it comprises power input interface circuit, main power circuit, auxiliary power circuit, constant-current source circuit and circuit output interface; Described power input interface circuit is electrically connected with the external power input of main power circuit, described auxiliary power circuit is connected with power input interface circuit, described constant-current source circuit electrical connection main power circuit, auxiliary power circuit, described circuit output interface is electrically connected with main power circuit, auxiliary power circuit, constant-current source circuit; Described power input interface circuit comprises two input interfaces, connects external power supply; Described main power circuit comprises switching power source chip, radiating control circuit, power switch circuit, and switching power source chip is electrically connected with radiating control circuit, power switch circuit; Described constant-current source circuit comprises operational amplifier, reference voltage source, sample circuit and regulating circuit, and described reference voltage source, operational amplifier, sample circuit, regulating circuit are electrically connected successively; Described circuit output interface comprises four output interfaces.
Especially, described main power circuit comprises electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, electric capacity C6, electric capacity C7, electric capacity C8, electric capacity C9, electric capacity C10, electric capacity C11, electric capacity C12, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, potentiometer RP1 and switching power source chip U1, wherein, described electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, the equal one end of electric capacity C6 connects power input interface circuit, other end ground connection, a VIN pin of switching power source chip U1, 2nd VIN pin connects power input interface circuit, an AGND pin of switching power source chip U1, 2nd AGND pin, 3rd AGND pin and PGND pin ground connection, the EN pin of one end connecting valve power supply chip U1 after resistance R1 and resistance R2 connects, other end ground connection, one end of the common port contact resistance R4 of resistance R1 and resistance R2, one end of binding post XS1, the other end of binding post connects outside electric power input interface circuit, one end of other end contact resistance R6 of resistance R4 and the base stage of triode Q1, the other end ground connection of resistance R6, the grounded emitter of triode Q1, one end connecting circuit output interface of the collector electrode splicing ear J3 of triode Q1, terminal J3, the FB pin contact resistance R3 of switching power source chip U1 and the common port of resistance R5, ground connection after the SS pin series capacitance C7 of switching power source chip U1, the one VOUT pin of electric capacity C8, electric capacity C9, electric capacity C10, electric capacity C11, electric capacity C12 equal one end connecting valve power supply chip U1, the 2nd VOUT pin and outputting drive voltage end, other end ground connection, after resistance R3 connects with resistance R5, one end is connected one end of potentiometer RP1, other end ground connection, and the other end of potentiometer RP1 connects outputting drive voltage end.
Especially, described constant-current source circuit comprises resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, potentiometer RP2, operational amplifier U6, electric capacity C28, electric capacity C29, electric capacity C30, electric capacity C31, electric capacity C32, electric capacity C33, electric capacity C34, electric capacity C35, electric capacity C36, diode D3, diode D4, diode D5, metal-oxide-semiconductor Q2, described resistance R8, resistance R9, resistance R10, diode D3, one end of diode D4 and one end of terminal J4, one end of terminal J5, outputting drive voltage end connects, the other end ground connection of resistance R8, the other end of resistance R9 connects one end of electric capacity C30, the other end ground connection of electric capacity C30, the other end of resistance 10 connects one end of electric capacity C31, the other end ground connection of electric capacity C31, and the other end of diode D3 connects one end of diode D5, the other end ground connection of diode D5, the other end splicing ear J4 of diode D4, terminal J5, the drain electrode of metal-oxide-semiconductor Q2, the grid splicing ear XS2 of metal-oxide-semiconductor Q2, electric capacity C33, electric capacity C34, one end of resistance R15, electric capacity C33, electric capacity C34, the other end ground connection of resistance R15, the other end of terminal XS2 connect with resistance R12 after the output of concatenation operation amplifier U6, a power end connecting circuit output interface of operational amplifier U6, electric capacity C28, one end of electric capacity C29, electric capacity C28, the other end ground connection of electric capacity C29, another power end connecting circuit output interface of operational amplifier U6, electric capacity C35, one end of electric capacity C36, electric capacity C35, the other end ground connection of electric capacity C36, the in-phase input end contact resistance R11 of operational amplifier U6, one end of resistance 13, the other end and the ground of resistance R13, resistance R17, resistance R18, one end of resistance R19 connects, resistance R17, resistance R18, the other end of resistance R19 connects the source electrode of metal-oxide-semiconductor Q2, one end of resistance R14 connects, the other end of resistance R14 and one end of resistance R16, the inverting input of operational amplifier U6 connects, the other end ground connection of resistance R16.
The semiconductor laser device driving circuit that the utility model proposes not only structure is simple, volume is little, be easy to and other system integration, and power adjustable, stable and reliable for performance, conversion efficiency is high, maximum current can reach 12A, can form high brightness laser hot spot, realize active heat removal by radiating control circuit, effectively reduce power supply caloric value, ensure that high efficiency of power supply exports; By force anti-interference, not by external interference, the not electromagnetic radiation environment of influential system in practical application.
Accompanying drawing explanation
The power input interface circuit structure diagram that Fig. 1 provides for the utility model embodiment;
The circuit output interface structure chart that Fig. 2 provides for the utility model embodiment;
The main power circuit structure chart that Fig. 3 provides for the utility model embodiment;
The auxiliary power circuit structure chart that Fig. 4 provides for the utility model embodiment;
The constant-current source circuit structure figure that Fig. 5 provides for the utility model embodiment.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Be understandable that, specific embodiment described herein only for explaining the utility model, but not to restriction of the present utility model.It also should be noted that, for convenience of description, the part relevant to the utility model is illustrate only but not full content in accompanying drawing, unless otherwise defined, all technology used herein and scientific terminology are identical with belonging to the implication that those skilled in the art of the present utility model understand usually.Term used herein, just in order to describe specific embodiment, is not intended to be restriction the utility model.
In the present embodiment, semiconductor laser device driving circuit specifically comprises power input interface circuit, main power circuit, auxiliary power circuit, constant-current source circuit and circuit output interface.Described power input interface circuit is electrically connected with the external power input of main power circuit, described auxiliary power circuit is connected with power input interface circuit, described constant-current source circuit electrical connection main power circuit, auxiliary power circuit, described circuit output interface is electrically connected with main power circuit, auxiliary power circuit, constant-current source circuit.
In the utility model, circuit input and output part adopts the powerful interface of small size, altogether comprises two inputs and four power output interfaces, fully can meet the various power supply requirements of system.As shown in Figure 1, described power input interface circuit comprises two input interfaces in the present embodiment, connects external power supply.One end ground connection of terminal J1, the other end connects external power supply VCC36 by fuse F1; One end of one end splicing ear J2 of terminal J2, other end ground connection.As shown in Figure 2, the output interface of circuit described in the present embodiment comprises four output interfaces.One end ground connection of terminals P 1, the other end connects power end VDD5; One end ground connection of terminals P 2, another termination+12V interface; One end ground connection of terminals P 3, the other end connects power end VDD5; One end ground connection of terminals P 4, the other end connects power end VDD5.
Comprise switching power source chip, radiating control circuit, power switch circuit in main power circuit described in the present embodiment, switching power source chip is electrically connected with radiating control circuit, power switch circuit.Main power circuit adopts a high-power switch electric power with wide inputting range chip to be core, add radiating control circuit and power switch circuit, the control overflow of client to system can be met, and efficiently to radiating element efficiently radiates heat, can ensure that power supply chip works efficiently and stably.As shown in Figure 3, described main power circuit specifically comprises electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, electric capacity C6, electric capacity C7, electric capacity C8, electric capacity C9, electric capacity C10, electric capacity C11, electric capacity C12, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, potentiometer RP1 and switching power source chip U1, wherein, described electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, the equal one end of electric capacity C6 connects power input interface circuit, other end ground connection, a VIN pin of switching power source chip U1, 2nd VIN pin connects power input interface circuit, an AGND pin of switching power source chip U1, 2nd AGND pin, 3rd AGND pin and PGND pin ground connection, the EN pin of one end connecting valve power supply chip U1 after resistance R1 and resistance R2 connects, other end ground connection, one end of the common port contact resistance R4 of resistance R1 and resistance R2, one end of binding post XS1, the other end of binding post connects outside electric power input interface circuit, one end of other end contact resistance R6 of resistance R4 and the base stage of triode Q1, the other end ground connection of resistance R6, the grounded emitter of triode Q1, one end connecting circuit output interface of the collector electrode splicing ear J3 of triode Q1, terminal J3, the FB pin contact resistance R3 of switching power source chip U1 and the common port of resistance R5, ground connection after the SS pin series capacitance C7 of switching power source chip U1, the one VOUT pin of electric capacity C8, electric capacity C9, electric capacity C10, electric capacity C11, electric capacity C12 equal one end connecting valve power supply chip U1, the 2nd VOUT pin and outputting drive voltage end LDPWR+, other end ground connection, after resistance R3 connects with resistance R5, one end is connected one end of potentiometer RP1, other end ground connection, and the other end of potentiometer RP1 connects outputting drive voltage end LDPWR+.It should be noted that, in described switching power source chip U1, all pins such as VIN pin, AGND pin, EN pin are the known pin in this area, therefore concrete meaning is not repeating at this.
In the present embodiment, as shown in Figure 4, accessory power supply part not only meets the power supply requirement of whole drive circuit to auxiliary power circuit, and the power supply that can be supplied to other unit of system uses, the power supply chip that whole circuit adopts peripheral circuit less, to save PCB arrangement space.Auxiliary power circuit comprise by time base chip U2, electric capacity C13, the electric capacity C16 circuit that forms, the circuit be made up of power supply chip U3, diode D1, inductance L 1, electric capacity C14, electric capacity C15, electric capacity C17, electric capacity C18, electric capacity C19, the circuit be made up of resistance R7, diode U5, the circuit composed in parallel by electric capacity C20, electric capacity C21, electric capacity C22, and the circuit to be made up of power supply chip U4, diode D2, inductance L 2, electric capacity C23, electric capacity C24, electric capacity C25, electric capacity C26, electric capacity C27, the concrete structure of above circuit refers to Fig. 4, does not repeat them here.
Described constant-current source circuit comprises operational amplifier, reference voltage source, sample circuit and regulating circuit, and described reference voltage source, operational amplifier, sample circuit, regulating circuit are electrically connected successively.The constant-current source circuit of drive circuit is the core of whole circuit, and circuit adopts high speed amplifier, accurate reference voltage and sampling with high precision resistance, can meet the power stage requirement of system from 0-60W by regulating circuit.In the present embodiment, as shown in Figure 5, described constant-current source circuit specifically comprises resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, potentiometer RP2, operational amplifier U6, electric capacity C28, electric capacity C29, electric capacity C30, electric capacity C31, electric capacity C32, electric capacity C33, electric capacity C34, electric capacity C35, electric capacity C36, diode D3, diode D4, diode D5, metal-oxide-semiconductor Q2, described resistance R8, resistance R9, resistance R10, diode D3, one end of diode D4 and one end of terminal J4, one end of terminal J5, outputting drive voltage end connects, the other end ground connection of resistance R8, the other end of resistance R9 connects one end of electric capacity C30, the other end ground connection of electric capacity C30, the other end of resistance 10 connects one end of electric capacity C31, the other end ground connection of electric capacity C31, and the other end of diode D3 connects one end of diode D5, the other end ground connection of diode D5, the other end splicing ear J4 of diode D4, terminal J5, the drain electrode of metal-oxide-semiconductor Q2, the grid splicing ear XS2 of metal-oxide-semiconductor Q2, electric capacity C33, electric capacity C34, one end of resistance R15, electric capacity C33, electric capacity C34, the other end ground connection of resistance R15, the other end of terminal XS2 connect with resistance R12 after the output of concatenation operation amplifier U6, a power end connecting circuit output interface of operational amplifier U6, electric capacity C28, one end of electric capacity C29, electric capacity C28, the other end ground connection of electric capacity C29, another power end connecting circuit output interface of operational amplifier U6, electric capacity C35, one end of electric capacity C36, electric capacity C35, the other end ground connection of electric capacity C36, the in-phase input end contact resistance R11 of operational amplifier U6, one end of resistance 13, the other end and the ground of resistance R13, resistance R17, resistance R18, one end of resistance R19 connects, resistance R17, resistance R18, the other end of resistance R19 connects the source electrode of metal-oxide-semiconductor Q2, one end of resistance R14 connects, the other end of resistance R14 and one end of resistance R16, the inverting input of operational amplifier U6 connects, the other end ground connection of resistance R16.
The technical solution of the utility model not only structure is simple, volume is little, be easy to and other system integration, and power adjustable, stable and reliable for performance, conversion efficiency is high, maximum current can reach 12A, can form high brightness laser hot spot, realize active heat removal by radiating control circuit, effectively reduce power supply caloric value, ensure that high efficiency of power supply exports; By force anti-interference, not by external interference, the not electromagnetic radiation environment of influential system in practical application.
Note, above are only preferred embodiment of the present utility model and institute's application technology principle.Skilled person in the art will appreciate that the utility model is not limited to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and protection range of the present utility model can not be departed from.Therefore, although be described in further detail the utility model by above embodiment, but the utility model is not limited only to above embodiment, when not departing from the utility model design, can also comprise other Equivalent embodiments more, and scope of the present utility model is determined by appended right.
Claims (3)
1. a semiconductor laser device driving circuit, is characterized in that, comprises power input interface circuit, main power circuit, auxiliary power circuit, constant-current source circuit and circuit output interface; Power input interface circuit is electrically connected with the external power input of main power circuit, auxiliary power circuit is connected with power input interface circuit, constant-current source circuit electrical connection main power circuit, auxiliary power circuit, circuit output interface is electrically connected with main power circuit, auxiliary power circuit, constant-current source circuit; Power input interface circuit comprises two input interfaces, connects external power supply; Main power circuit comprises switching power source chip, radiating control circuit, power switch circuit, and switching power source chip is electrically connected with radiating control circuit, power switch circuit; Constant-current source circuit comprises operational amplifier, reference voltage source, sample circuit and regulating circuit, and reference voltage source, operational amplifier, sample circuit, regulating circuit are electrically connected successively; Described circuit output interface comprises four output interfaces.
2. semiconductor laser device driving circuit according to claim 1, it is characterized in that, described main power circuit comprises electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, electric capacity C6, electric capacity C7, electric capacity C8, electric capacity C9, electric capacity C10, electric capacity C11, electric capacity C12, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, potentiometer RP1 and switching power source chip U1, wherein, described electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4, electric capacity C5, the equal one end of electric capacity C6 connects power input interface circuit, other end ground connection, the one VIN pin of switching power source chip U1, 2nd VIN pin connects power input interface circuit, the one AGND pin of switching power source chip U1, 2nd AGND pin, 3rd AGND pin and PGND pin ground connection, the EN pin of one end connecting valve power supply chip U1 after resistance R1 and resistance R2 connects, other end ground connection, one end of the common port contact resistance R4 of resistance R1 and resistance R2, one end of binding post XS1, the other end of binding post connects outside electric power input interface circuit, one end of other end contact resistance R6 of resistance R4 and the base stage of triode Q1, the other end ground connection of resistance R6, the grounded emitter of triode Q1, the collector electrode splicing ear J3 of triode Q1, one end connecting circuit output interface of terminal J3, the FB pin contact resistance R3 of switching power source chip U1 and the common port of resistance R5, ground connection after the SS pin series capacitance C7 of switching power source chip U1, the one VOUT pin of electric capacity C8, electric capacity C9, electric capacity C10, electric capacity C11, electric capacity C12 equal one end connecting valve power supply chip U1, the 2nd VOUT pin and outputting drive voltage end, other end ground connection, after resistance R3 connects with resistance R5, one end is connected one end of potentiometer RP1, other end ground connection, and the other end of potentiometer RP1 connects outputting drive voltage end.
3. semiconductor laser device driving circuit according to claim 1, it is characterized in that, described constant-current source circuit comprises resistance R8, resistance R9, resistance R10, resistance R11, resistance R12, resistance R13, resistance R14, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, potentiometer RP2, operational amplifier U6, electric capacity C28, electric capacity C29, electric capacity C30, electric capacity C31, electric capacity C32, electric capacity C33, electric capacity C34, electric capacity C35, electric capacity C36, diode D3, diode D4, diode D5, metal-oxide-semiconductor Q2, wherein, described resistance R8, resistance R9, resistance R10, diode D3, one end of diode D4 and one end of terminal J4, one end of terminal J5, outputting drive voltage end connects, the other end ground connection of resistance R8, the other end of resistance R9 connects one end of electric capacity C30, the other end ground connection of electric capacity C30, the other end of resistance 10 connects one end of electric capacity C31, the other end ground connection of electric capacity C31, and the other end of diode D3 connects one end of diode D5, the other end ground connection of diode D5, the other end splicing ear J4 of diode D4, terminal J5, the drain electrode of metal-oxide-semiconductor Q2, the grid splicing ear XS2 of metal-oxide-semiconductor Q2, electric capacity C33, electric capacity C34, one end of resistance R15, electric capacity C33, electric capacity C34, the other end ground connection of resistance R15, the other end of terminal XS2 connect with resistance R12 after the output of concatenation operation amplifier U6, a power end connecting circuit output interface of operational amplifier U6, electric capacity C28, one end of electric capacity C29, electric capacity C28, the other end ground connection of electric capacity C29, another power end connecting circuit output interface of operational amplifier U6, electric capacity C35, one end of electric capacity C36, electric capacity C35, the other end ground connection of electric capacity C36, the in-phase input end contact resistance R11 of operational amplifier U6, one end of resistance 13, the other end and the ground of resistance R13, resistance R17, resistance R18, one end of resistance R19 connects, resistance R17, resistance R18, the other end of resistance R19 connects the source electrode of metal-oxide-semiconductor Q2, one end of resistance R14 connects, the other end of resistance R14 and one end of resistance R16, the inverting input of operational amplifier U6 connects, the other end ground connection of resistance R16.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520470926.7U CN204793614U (en) | 2015-07-02 | 2015-07-02 | Semiconductor laser drive circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520470926.7U CN204793614U (en) | 2015-07-02 | 2015-07-02 | Semiconductor laser drive circuit |
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| Publication Number | Publication Date |
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| CN204793614U true CN204793614U (en) | 2015-11-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201520470926.7U Withdrawn - After Issue CN204793614U (en) | 2015-07-02 | 2015-07-02 | Semiconductor laser drive circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966988A (en) * | 2015-07-02 | 2015-10-07 | 无锡亮源激光技术有限公司 | Semiconductor laser driving circuit |
-
2015
- 2015-07-02 CN CN201520470926.7U patent/CN204793614U/en not_active Withdrawn - After Issue
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966988A (en) * | 2015-07-02 | 2015-10-07 | 无锡亮源激光技术有限公司 | Semiconductor laser driving circuit |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151118 Effective date of abandoning: 20181009 |
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| AV01 | Patent right actively abandoned |