CN204793209U - L type probe microstrip antenna - Google Patents

L type probe microstrip antenna Download PDF

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Publication number
CN204793209U
CN204793209U CN201520411606.4U CN201520411606U CN204793209U CN 204793209 U CN204793209 U CN 204793209U CN 201520411606 U CN201520411606 U CN 201520411606U CN 204793209 U CN204793209 U CN 204793209U
Authority
CN
China
Prior art keywords
dielectric layer
type probe
microstrip antenna
radiation patch
medium layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201520411606.4U
Other languages
Chinese (zh)
Inventor
徐再
徐靖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SHENZHEN XINFUCHENG ELECTRONIC CO., LTD.
Original Assignee
Zhangjiagang Mao An Trade Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhangjiagang Mao An Trade Co Ltd filed Critical Zhangjiagang Mao An Trade Co Ltd
Priority to CN201520411606.4U priority Critical patent/CN204793209U/en
Application granted granted Critical
Publication of CN204793209U publication Critical patent/CN204793209U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Abstract

The application discloses L type probe microstrip antenna, including first dielectric layer and the second dielectric layer that sets up from top to bottom, be equipped with strutting arrangement between first dielectric layer and the second dielectric layer, first dielectric layer and second dielectric layer interval set up, be formed with the radiation paster on the lower surface of first dielectric layer, install L type probe on the upper surface of second dielectric layer, set up the gap of rectangle on the radiation paster. The utility model discloses a structure has higher bandwidth and gain.

Description

A kind of L-type probe microstrip antenna
Technical field
The application belongs to wireless communication technology field, particularly relates to a kind of L-type probe microstrip antenna.
Background technology
Although printed circuit board (PCB), dipole antenna are all good function antennas, tend to relatively narrow bandwidth operation.Narrow bandwidth of operation limits printed circuit board (PCB), dipole antenna on the large broadband of such as IEEE802.11a frequency band, operates application on required equipment.
In view of this, the flat plane antenna that a kind of high bandwidth is provided is necessary.
Utility model content
The purpose of this utility model is to provide a kind of L-type probe microstrip antenna, to overcome deficiency of the prior art.
For achieving the above object, the utility model provides following technical scheme:
The embodiment of the present application discloses a kind of L-type probe microstrip antenna, comprise first medium layer setting up and down and second dielectric layer, bracing or strutting arrangement is provided with between described first medium layer and second dielectric layer, described first medium layer and second dielectric layer interval are arranged, the lower surface of described first medium layer is formed with radiation patch, the upper surface of described second dielectric layer is provided with L-type probe, described radiation patch offers the gap of rectangle.
Preferably, in above-mentioned L-type probe microstrip antenna, described radiation patch is rectangle.
Preferably, in above-mentioned L-type probe microstrip antenna, described gap extends along the diagonal of described radiation patch.
Preferably, in above-mentioned L-type probe microstrip antenna, the material of described first medium layer and second dielectric layer is polytetrafluoroethylene.
Compared with prior art, the utility model has the advantage of: structure of the present utility model has higher bandwidth sum gain.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present application or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the application, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Figure 1 shows that the structural representation of L-type probe microstrip antenna in the utility model specific embodiment;
Figure 2 shows that the structural representation of radiation patch in the utility model specific embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be described in detail the technical scheme in the utility model embodiment, obviously, described embodiment is only the utility model part embodiment, instead of whole embodiments.Based on the embodiment in the utility model, the every other embodiment that those of ordinary skill in the art obtain under the prerequisite not making creative work, all belongs to the scope of the utility model protection.
Shown in ginseng Fig. 1 and Fig. 2, L-type probe microstrip antenna, comprise first medium layer 1 setting up and down and second dielectric layer 2, bracing or strutting arrangement 3 is provided with between described first medium layer 1 and second dielectric layer 2, described first medium layer and second dielectric layer interval are arranged, the lower surface of described first medium layer 1 is formed with radiation patch 11, the upper surface of described second dielectric layer 2 is provided with L-type probe 21, described radiation patch offers the gap 111 of rectangle.
Further, described radiation patch is rectangle.
Further, described gap extends along the diagonal of described radiation patch.
Further, the material of described first medium layer and second dielectric layer is polytetrafluoroethylene.
Structure of the present utility model has higher bandwidth sum gain.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
The above is only the embodiment of the application; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the application's principle; can also make some improvements and modifications, these improvements and modifications also should be considered as the protection range of the application.

Claims (4)

1. a L-type probe microstrip antenna, it is characterized in that, comprise first medium layer setting up and down and second dielectric layer, bracing or strutting arrangement is provided with between described first medium layer and second dielectric layer, described first medium layer and second dielectric layer interval are arranged, the lower surface of described first medium layer is formed with radiation patch, the upper surface of described second dielectric layer is provided with L-type probe, described radiation patch offers the gap of rectangle.
2. L-type probe microstrip antenna according to claim 1, is characterized in that: described radiation patch is rectangle.
3. L-type probe microstrip antenna according to claim 2, is characterized in that: described gap extends along the diagonal of described radiation patch.
4. L-type probe microstrip antenna according to claim 1, is characterized in that: the material of described first medium layer and second dielectric layer is polytetrafluoroethylene.
CN201520411606.4U 2015-06-15 2015-06-15 L type probe microstrip antenna Expired - Fee Related CN204793209U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520411606.4U CN204793209U (en) 2015-06-15 2015-06-15 L type probe microstrip antenna

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520411606.4U CN204793209U (en) 2015-06-15 2015-06-15 L type probe microstrip antenna

Publications (1)

Publication Number Publication Date
CN204793209U true CN204793209U (en) 2015-11-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520411606.4U Expired - Fee Related CN204793209U (en) 2015-06-15 2015-06-15 L type probe microstrip antenna

Country Status (1)

Country Link
CN (1) CN204793209U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106169655A (en) * 2016-08-18 2016-11-30 张春巍 " state " font circularly-polarized patch antenna

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106169655A (en) * 2016-08-18 2016-11-30 张春巍 " state " font circularly-polarized patch antenna
CN106169655B (en) * 2016-08-18 2019-02-05 青岛理工大学 " state " font circularly-polarized patch antenna

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Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160229

Address after: Baoan District Songgang street Shenzhen city Guangdong province 518000 Lang community South West Bank Sha Jiang Lu unit 6 C 8C (Office)

Patentee after: SHENZHEN XINFUCHENG ELECTRONIC CO., LTD.

Address before: 215625, Jiangsu, Suzhou, Zhangjiagang Kam Fengzhen (Jiangsu Yangtze River International Metallurgical Industry Park, 1 Fairview Road, Nine Dragon Logistics Park), Zhangjiagang Trade Co., Ltd.

Patentee before: Zhangjiagang Mao An trade Co., Ltd

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20151118

Termination date: 20160615