CN204681643U - With the LED matrix of reverse protection - Google Patents
With the LED matrix of reverse protection Download PDFInfo
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- CN204681643U CN204681643U CN201520377626.4U CN201520377626U CN204681643U CN 204681643 U CN204681643 U CN 204681643U CN 201520377626 U CN201520377626 U CN 201520377626U CN 204681643 U CN204681643 U CN 204681643U
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- led
- zener diode
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- led chip
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Abstract
The utility model discloses a kind of LED matrix with reverse protection, be made up of LED unit and the Zener diode that is connected with two negative terminals of LED unit parallel connection, when Zener diode positive termination voltage just, during the positive termination voltage negative of another Zener diode, Zener diode is forward conduction, and be equivalent to a common diode, another Zener diode is reversal connection, as voltage stabilizing didoe, play pressure stabilization function; And when connecing conversely, be still wherein Zener diode forward conduction, another Zener diode plays pressure stabilization function; Thus no matter this device is just connecing or reversal connection, and voltage can control in stable scope, thus can not burn out LED chip; And Zener diode can play electrostatic leakage effect, prevent LED reverse breakdown, stable voltage and current can also be provided for LED unit, prevent LED to be burned because electric current is excessive, guarantee the useful life of LED, and realize the brightness uniformity, stable of LED display.
Description
Technical field
The utility model relates to LED field, particularly a kind of LED matrix preventing LED chip to be reversed the band reverse protection of voltage breakdown.
Background technology
Energy-saving and environmental protection, long-life, response are fast because having for LED, rich color, the number of advantages such as controlled, become illuminating device of new generation gradually.Along with the arrival in LED illumination epoch, LED will be applied to each lighting field more and more widely.But LED is a kind of Electrostatic Discharge Sensitive, when being subject to too high reverse high voltage, meeting is breakdown and damage.In a kind of LED of prior art, capacitance-resistance voltage reduction circuit is adopted to provide corresponding drive current for LED etc.Owing to adopting the driving power circuit of resistance-capacitance depressurization, connect moment at driving power circuit, because decompression capacitor is intrinsic, higher surge voltage can be produced and be applied on LED chip, once exceed the reverse breakdown voltage of LED chip, permanent damage will be caused to LED chip.And LED chip has differentiation both positive and negative polarity, both positive and negative polarity connects and instead also can cause burning of LED chip
Therefore, in order to protect LED, how designing a kind of can be technical problem urgently to be resolved hurrily in the industry by the LED matrix of band reverse protection LED being carried out to reverse protection.
Utility model content
Main purpose of the present utility model is to provide that a kind of circuit structure is simple, the LED matrix for preventing LED chip to be reversed the band reverse protection of voltage breakdown of stable performance.
The utility model proposes a kind of LED matrix with reverse protection; comprise LED unit and Zener diode; described LED unit is made up of at least one LED chip; described Zener diode is provided with two; two described Zener diode negative terminals are connected to form bi-directional zener diode to negative terminal, are connected in parallel on the two ends of described LED unit.
Preferably, described LED unit contains a LED chip, described Zener diode is arranged on the back side of described LED chip, and the positive pole of Zener diode described in is connected with the positive pole pin of described LED chip, and the positive pole of Zener diode described in another is connected with the negative pole pin of described LED chip.
Preferably, described LED unit contains multiple LED chip, mutually connects between described LED chip.
The beneficial effect of the LED matrix of band reverse protection of the present utility model is:
The LED matrix of band reverse protection of the present utility model is made up of LED unit and in parallel with LED unit two Zener diodes, when by two positive termination voltages in the left side of Zener diode negative terminal to the bi-directional zener diode that negative terminal is connected to form just, during right positive termination voltage negative, the Zener diode on the left side is forward conduction, be equivalent to a common diode, the Zener diode on the right is reversal connection, as voltage stabilizing didoe, plays pressure stabilization function; And conversely, the positive termination voltage negative in a left side of bi-directional zener diode, right positive termination voltage timing, the Zener diode forward conduction on the right, the Zener diode on the left side plays pressure stabilization function; Thus no matter this device is just connecing or reversal connection, and circuit voltage can control in stable scope, thus can not burn out LED chip; And Zener diode can play electrostatic leakage effect, prevent LED reverse breakdown, stable voltage and current can also be provided for LED unit, prevent LED to be burned because electric current is excessive, guarantee the useful life of LED, and realize the brightness uniformity, stable of LED display.
Accompanying drawing explanation
Fig. 1 is the circuit diagram one of the LED matrix of band reverse protection of the present utility model;
Fig. 2 is the circuit diagram two of the LED matrix of band reverse protection of the present utility model.
The realization of the utility model object, functional characteristics and advantage will in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
See figures.1.and.2, propose an embodiment of the LED matrix of band reverse protection of the present utility model:
With a LED matrix for reverse protection, comprise LED unit and two Zener diodes 2, this LED unit is made up of one or more LED chip 1, and the negative terminal of two Zener diodes 2 is connected to form bi-directional zener diode to negative terminal, is connected in parallel on the two ends of LED unit.
As Fig. 1, when LED unit is a LED chip 1, Zener diode 2 is arranged on the back side of LED chip 1, and the A end of the Zener diode 2 on the right is connected with the positive pole pin of LED chip 1, and the A end of the Zener diode 2 on the left side is connected with the negative pole pin of LED chip 1.
As Fig. 2, when LED unit is made up of multiple LED chip 1, mutually connect between multiple LED chip 1.
This LED matrix is owing to being parallel with Zener diode 2, when the Zener diode 2 on the left side A termination voltage just, when the A termination voltage of the Zener diode 2 on the right is born, the Zener diode on the left side is forward conduction, be equivalent to a common diode, the Zener diode on the right is reversal connection, as voltage stabilizing didoe, plays pressure stabilization function; And conversely, the A termination voltage of the Zener diode 2 on the left side is born, the A termination voltage timing of the Zener diode 2 on the right, the Zener diode forward conduction on the right, the Zener diode on the left side plays pressure stabilization function; Thus no matter this device is just connecing or reversal connection, and circuit voltage can control in stable scope, thus can not burn out LED chip.And Zener diode 2 can play electrostatic leakage effect, prevent LED reverse breakdown, stable voltage and current can also be provided for LED unit, prevent LED to be burned because electric current is excessive, guarantee the useful life of LED, and realize the brightness uniformity, stable of LED display.
The foregoing is only preferred embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every equivalent structure transformation utilizing the utility model specification and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (3)
1. the LED matrix with reverse protection; it is characterized in that; comprise LED unit and Zener diode; described LED unit is made up of at least one LED chip; described Zener diode is provided with two; two described Zener diode negative terminals are connected to form bi-directional zener diode to negative terminal, are connected in parallel on the two ends of described LED unit.
2. the LED matrix of band reverse protection according to claim 1; it is characterized in that; described LED unit contains a LED chip; described Zener diode is arranged on the back side of described LED chip; the positive pole of Zener diode described in is connected with the positive pole pin of described LED chip, and the positive pole of Zener diode described in another is connected with the negative pole pin of described LED chip.
3. the LED matrix of band reverse protection according to claim 1, is characterized in that, described LED unit contains multiple LED chip, mutually connects between described LED chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520377626.4U CN204681643U (en) | 2015-06-03 | 2015-06-03 | With the LED matrix of reverse protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520377626.4U CN204681643U (en) | 2015-06-03 | 2015-06-03 | With the LED matrix of reverse protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204681643U true CN204681643U (en) | 2015-09-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520377626.4U Active CN204681643U (en) | 2015-06-03 | 2015-06-03 | With the LED matrix of reverse protection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204681643U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105590931A (en) * | 2016-01-27 | 2016-05-18 | 长兴科迪光电股份有限公司 | Piranhas LED with zener diode |
| CN110379804A (en) * | 2019-06-10 | 2019-10-25 | 天台天宇光电股份有限公司 | A kind of bilateral LED light of built-in anti-breakdown protection |
| CN111343767A (en) * | 2020-03-23 | 2020-06-26 | 叶桐林 | LED bleeder circuit and LED drive circuit |
-
2015
- 2015-06-03 CN CN201520377626.4U patent/CN204681643U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105590931A (en) * | 2016-01-27 | 2016-05-18 | 长兴科迪光电股份有限公司 | Piranhas LED with zener diode |
| CN110379804A (en) * | 2019-06-10 | 2019-10-25 | 天台天宇光电股份有限公司 | A kind of bilateral LED light of built-in anti-breakdown protection |
| CN111343767A (en) * | 2020-03-23 | 2020-06-26 | 叶桐林 | LED bleeder circuit and LED drive circuit |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 528499 member of Guangdong province Zhongshan City peak Shiqi District Hing Road seventh building two floor Patentee after: Guangdong crystal photoelectric Co., Ltd. Address before: 528499 member of Guangdong province Zhongshan City peak Shiqi District Hing Road seventh building two floor Patentee before: ZHONGSHAN JINGDE OPTOELECTRONICS CO., LTD. |