CN204680664U - Semiconductor module - Google Patents
Semiconductor module Download PDFInfo
- Publication number
- CN204680664U CN204680664U CN201390000610.0U CN201390000610U CN204680664U CN 204680664 U CN204680664 U CN 204680664U CN 201390000610 U CN201390000610 U CN 201390000610U CN 204680664 U CN204680664 U CN 204680664U
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- China
- Prior art keywords
- fulcrum
- terminal
- housing
- semiconductor module
- side body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 abstract description 32
- 238000005452 bending Methods 0.000 abstract description 28
- 238000004519 manufacturing process Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/049—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being perpendicular to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Manufacturing Of Electrical Connectors (AREA)
- Connections Arranged To Contact A Plurality Of Conductors (AREA)
Abstract
The utility model provides a kind of bending method of semiconductor module terminal, improves the height tolerance that the terminal of the semiconductor module formed by bending process produces because of tilting.Prepare housing and terminal, this housing comprises: through hole; First fulcrum, this first fulcrum is formed at the peristome of described through hole; And second fulcrum, this second fulcrum is formed in than the position of described first fulcrum further from described through hole.By the described terminal of through described through hole with described first fulcrum for fulcrum bends.By described terminal with described second fulcrum for fulcrum bends, till almost parallel with the interarea of described housing.Further, with described second fulcrum for fulcrum, the interarea of described terminal towards described housing is bent, makes the shift length of the end of described terminal at least be equivalent to described terminal thickness.
Description
Technical field
The utility model relates to the bending method of the semiconductor module terminal in the semiconductor modules such as diode, thyristor, transistor modular.
Background technology
Generally, in semiconductor module product, there will be a known and bend and form the manufacture method of the outside terminal connected, as the manufacture method described in the figure of patent documentation 1 or the figure of patent documentation 2.The manufacture method of this terminal is in advance the front end of conductor is cut to the shape of outside terminal, is electrically connected by this conductor with built-in circuit, the exterior members such as resinous casing cover are installed, after filling bolt, the leading section of the terminal conductor of tabular is bent, form terminal.The copper coin that the material of this terminal adopts conductivity good or brass sheet.
The each operation of Fig. 8 to Figure 10 to the manufacture method of this terminal is utilized to be described.Fig. 8 shows the figure installing side body in terminal manufacturing method in the past.In this figure, the lower side body 102 of semiconductor module is provided with fixing outside leading-out terminal (hereinafter referred to as " terminal ") 100 and control terminal 101, outside leading-out terminal 100 and control terminal 101 form the electrical connection between the circuit component parts such as semiconductor element of lower side body 102 inside.The upper side body 103 with the hole of these terminals 100 through is coated on lower side body 102, then the structure that the leading section defining terminal 100 is as shown in Figure 9 given prominence to upward from upper side body 103.Fig. 9 shows the figure of the semiconductor module in terminal manufacturing method in the past before terminal bending.Fig. 9 (a) is its vertical view, and Fig. 9 (b) is its end view.State shown in Fig. 9 is, after the operation shown in Fig. 8, inserts the state being used for lead-in wire being fixed to the hex bolts 105 of terminal at upper side body 103.Afterwards, the bending process of terminal 100 is carried out.
With regard to principle, the bending process of terminal 100 is after such as being bent a little by terminal 100 fixture vertically stretched out from upper side body shown in Fig. 9, as shown in Figure 10 with pressing fixture 200 press terminal 100, till the degree that the front end of terminal clamps 100 contacts with upper side body 103.In addition, the bending process of terminal 100 also comprises the roll using press terminal.Now, in Figure 10, roll presses terminal 100 to the right and advances on the left of paper, thus press terminal.In addition, the chuck apparatus carrying out terminal bends processing can use the various method such as manually or automatically.
In addition, to bend and the method forming the outside terminal connected also there will be a known as described in Patent Document 3, arrange and be used for the recess of the electrode embedded on housing, thus form the manufacture method of the electrode of external connection terminals.
In addition, also there will be a known outside terminal disclosed in patent documentation 4.Be different from the method being carried out again by terminal as described above bending after housing assembling, the formation method of terminal disclosed in this patent documentation 4 is arranged on housing by the electrode bent in advance.
Prior art document
Patent documentation
Patent documentation 1: Japanese Patent Laid-Open 2003-289130 publication
Patent documentation 2: Japanese Patent Laid-Open 2009-76887 publication
Patent documentation 3: Japan Patent is real opens clear 62-142856 publication
Patent documentation 4: Japanese Patent Laid-Open 6-120390 publication
Utility model content
Utility model technical problem to be solved
Original outside leading-out terminal is parallel to the upper surface of side body for target, but its leading section can be caused to upwarp due to the resilience after terminal component bends.The terminal front end portion that this resilience causes upwarps as shown in Figure 10 (b) and Figure 11.In the manufacture method of the terminal as described in patent documentation 1,2 and 3, easily there is upwarping of such a terminal front end portion.Therefore become large from the dimensional discrepancy in the face to the short transverse of terminal upper surface of installing semiconductor module.Such as, when utilizing copper etc. bus to be connected side by side by multiple semiconductor module, there is required precision for the height dimension from the installed surface of semiconductor module to terminal, but terminal front end portion is upwarped due to this resilience effect, sometimes cannot meet this required precision.The required precision of the height dimension from the installed surface of this semiconductor module to terminal, such as general model is ± 0.8mm, and high accuracy model is ± 0.15mm.Such a height dimension required precision is the close contact (namely reducing contact impedance) in order to ensure each terminal and bus, prevents stress from concentrating the internal sabotage etc. making element to special terminal.
For suppressing resilience effect to make terminal front end portion upwarp, or revise the leading section upwarped, and terminal is bent with brute force, probably can destroy side body.
Although as in patent documentation 4 mention, the method of the terminal having installation to bend in advance, but due to cannot injection molding be carried out in the method, therefore exist in powerful fixed terminal this point and have problems, in addition, if be suitable for finished product, then significantly must change the design of finished product, also can produce the problem on cost.
The purpose of this utility model is, even if cause resilience, power model is being installed under the state on installed surface, can guarantee by the height dimension precision of installed surface to terminal upper surface, terminal does not tilt relative to installed surface, in plane, easily can guarantee the depth of parallelism of installed surface and each terminal surface, and solve these objects can be easy at a low price carry out, and also can be applicable to finished product without the need to carrying out structure modify significantly.
The technical scheme that technical solution problem adopts
First aspect of the present utility model is a kind of semiconductor module, comprising: housing, and this housing is provided with circuit component parts; And terminal, this terminal is electrically connected with this circuit component parts and is fixed, and stretches out upward from this housing, it is characterized in that, the structure of described housing comprises: the first fulcrum, and described first fulcrum is the fulcrum that terminal touches during initial and this body contact when being just bent on the housing; Second fulcrum, described second fulcrum is the fulcrum that terminal touches during last and this body contact when being just bent on the housing; And the recess in the scope to be bent at described terminal, utilize the first fulcrum of described housing and the second fulcrum to bend described terminal, make the interarea of the front end of this terminal and described housing almost parallel.
Wherein, this housing comprises: for the through hole that described terminal is through; First fulcrum, this first fulcrum is formed at the peristome of described through hole; And second fulcrum, this second fulcrum is formed in than the position of described first fulcrum further from described through hole.
Wherein, described housing is made up of lower side body and the upper side body that covers on lower side body, described circuit component parts is installed on described lower side body, and described upper side body comprises: described through hole, described first fulcrum, described second fulcrum and the described recess adjacent with described second fulcrum.
Wherein, the shape of the described housing between described first fulcrum and described second fulcrum is even shape, the shape that raises up or any one shape downwards in convex shape.
Wherein, described second fulcrum is formed with the bottom surface relative to described first fulcrum and described recess from the mode that described housing is outstanding.
Wherein, described bottom surface is inclined relative to the interarea of described housing.
Wherein, described second fulcrum is positioned on the upside of described first fulcrum, distance between the two from be substantially equal to described terminal thickness of slab 1/2nd to the thickness of slab being substantially equal to described terminal, described first fulcrum and described second fulcrum distance are in the horizontal direction from the thickness of slab being substantially equal to described terminal to 2 times of thickness of slab being substantially equal to described terminal.
Wherein, at the part place corresponding with the first fulcrum and the second fulcrum, described terminal has groove, and described groove is parallel with the direction of body contact with terminal.
Utility model effect
By the utility model, be bent the terminal after processing in the smooth structure parallel with the upper surface of semiconductor module.Result, there is following effect: by multiple semiconductor module side by side, when connecting the terminal of each semiconductor module with bus etc., consistent, between bus and the terminal of semiconductor module the gap of the height of the terminal of each semiconductor module keeps very little, bus and each semiconductor Modular surface keeping parallelism.
Accompanying drawing explanation
Fig. 1 is the key diagram of the manufacture method that the utility model relates to, and shows the state that terminal stretches out above housing.
Fig. 2 is the key diagram of the manufacture method that the utility model relates to, and shows terminal bending operation.
Fig. 3 is the key diagram of the manufacture method that the utility model relates to, and the terminal stage (a) and the terminal that show terminal bending operation bend the state that operation terminates the terminal of rear (b).
Fig. 4 shows the figure of the shape of the housing between the first fulcrum and the second fulcrum that the utility model relates to.Fig. 4 (a) be show flat shape with the relation of perspective representation terminal and fulcrum, Fig. 4 (b), Fig. 4 (c) shows and shows to the shape of lower convexity, Fig. 4 (d) shape raised up.
Fig. 5 shows the figure of the recess of the housing in the scope that terminal that the utility model relates to is bent.The shape that Fig. 5 (a) shows the housing between the first fulcrum and the second fulcrum is the example of the situation of plane, and Fig. 5 (b) shows the example that same position shape is the situation of the shape raised up.
Fig. 6 shows the figure having the example of the terminal of groove that the utility model relates to.
The figure of the state after the terminal bending of groove that what Fig. 7 showed that the utility model relates to have.
Fig. 8 shows the figure installing side body in terminal manufacturing method in the past.
Fig. 9 shows the figure of the semiconductor module in terminal manufacturing method in the past before terminal bending.A () is its vertical view, (b) is its end view.
Figure 10 shows the concept map of the example of the bending operation of terminal in terminal manufacturing method in the past.A () shows the figure of the state of carrying out terminal bending, (b) shows the figure of the state after carrying out that bends.
Figure 11 shows the end view of the terminal of the semiconductor module manufactured by terminal manufacturing method in the past.
Embodiment
The mode implementing utility model is described with figure.The flow process roughly of manufacturing process of the present utility model is identical with method in the past.Namely identical with shown in Fig. 8 to Figure 10.In the utility model also as shown in Fig. 8, install fixing outside leading-out terminal 100 and control terminal 101 at the lower side body 102 of semiconductor module, described outside leading-out terminal 100 and control terminal 101 form the electrical connection between the circuit component parts such as semiconductor element of lower side body 102 inside.Lower side body 102 covers the upper side body 103 with the through hole of through terminal 100, and form the structure of semiconductor module as shown in Figure 9, this is also with in the past identical.In Fig. 9, after engineering as shown in Figure 8, insert the hex bolts 105 being used for lead-in wire being fixed to terminal 100, this point is also as in the past.Afterwards, although also carry out the bending process of terminal 100, the utility model just this terminal different from method in the past bends and processes.
Circuit component parts comprises insulated substrate and the cooling base of the band conductive pattern of semiconductor element mounted thereon.Semiconductor module is roughly cubic shaped.The bottom surface of cooling base is general planar, becomes an interarea S (with reference to Fig. 8) of semiconductor module.Upper side body 103 is installed on semiconductor module in the mode that its interarea S1 is parallel with interarea S.The interarea S1 of upper side body 103 is upper surfaces.
Fig. 1 is the key diagram of the manufacture method that the utility model relates to, and shows the state that terminal stretches out above housing.Fig. 2 is the key diagram of the manufacture method that the utility model relates to, and shows terminal bending operation.With Fig. 1 and Fig. 2, terminal bending operation of the present utility model is described.
In the upper side body 103 of semiconductor module, as shown in Figures 1 and 2, comprising: through hole 103h, this through hole 103h is through for terminal 100; First fulcrum 1, this first fulcrum 1 is formed at the peristome at this through hole 103h; Second fulcrum 2, this second fulcrum 2 is formed in the position more farther apart from through hole 103h than the first fulcrum 1.Second fulcrum 2 is formed from the mode that upper body 103 is outstanding with the bottom surface relative to the 1st fulcrum 1 and recess 3.First, the first fulcrum 1 of upper side body 103 is bent terminal 100 as fulcrum, this first fulcrum 1 is the fulcrum contacted when terminal contacts at first with upper side body 103 when terminal bends.Fig. 1 represent the bending of terminal 100 start before state.The power produced by bending clamp (not shown) as Suo Shi Fig. 2 (a) 300 pairs of terminals 100 act on, and terminal 100 bends.At this moment terminal 100 bends to the inside, and the fulcrum contacted when contacting at first with upper side body 103 is fulcrum 1, and using this fulcrum 1 as fulcrum, terminal 100 starts to be bent.
Here, Fig. 4 (a) shows the perspective view of the relation of terminal 100 and fulcrum 1.Although as shown in Fig. 4 (a), the bending of terminal 100 bends, the 1st contact wire 11 that the terminal 100 when bending contacts with upper side body 103 using this status and appearance for bend as fulcrum with the first fulcrum 1.
Terminal 100 continues to be bent, as shown in Fig. 2 (b), bending is proceeded using the second fulcrum 2 of described upper side body 103 as fulcrum, until the part be bent almost level, namely, with the interarea S1 of upper body 103 be almost parallel till, this second fulcrum 2 is the fulcrums finally contacted with upper side body 103.Second fulcrum 2 is positioned on the upside of the first fulcrum 1, distance is between the two from being substantially equal to 1/2nd of terminal 100 thickness of slab to being substantially equal to terminal 100 thickness of slab, and the first fulcrum 1 and the second fulcrum 2 distance are in the horizontal direction from being substantially equal to terminal 100 thickness of slab to being substantially equal to 2 times of terminal 100 thickness of slab.
Bend terminal 100 further afterwards, until the front end, end of terminal 100 is displaced at least suitable with the thickness of terminal 100 length place downwards.Preferably, as shown in Fig. 2 (c), if consider the angle that the first type surface of upper body 103 and the end of terminal 100 are, then the fore-end being bent to terminal 100 is from till the degree of the downward-sloping θ of horizontal direction.Length d place below the position that this front end, end being equivalent to be bent to terminal 100 is positioned at the second fulcrum 2.If angle θ is from 1.3 ° to 5 °, then as shown in Fig. 2 (d), after resilience, the terminal be bent almost level, that is, almost parallel with the first type surface S1 of upper body 103.These bending operations can be carried out continuously, or, also can suspend a period of time at each inter process.
The thickness of slab of the terminal 100 adopted is 0.6mm to 2mm degree.The length L of the outside terminal part of the terminal 100 be bent is 10mm to 30mm.Such as, the thickness of slab of terminal 100 is 0.6mm, length L when being 10mm, and angle θ is that the corresponding length d of the scope of 1.3 ° to 5 ° is roughly 0.2mm to 0.9mm.The thickness of slab of terminal 100 is 1mm, length L when being 15mm, and angle θ is that the corresponding length d of the scope of 1.3 ° to 5 ° is roughly 0.3mm to 1.3mm.The thickness of slab of terminal 100 is 2mm, length L when being 20mm, and angle θ is that the corresponding length d of the scope of 1.3 ° to 5 ° is roughly 0.5mm to 1.7mm.
Bend for realizing such a terminal 100, as on the upper surface of first type surface of side body 103, recess 3 be formed, this recess 3 be the terminal 100 that is bent in bending process the scope of process.This structure illustrates at Fig. 5.The recess 3 illustrated tilts relative to the first type surface of upper side body 103.For this recess 3, if the gap of the front end of terminal 100 and upper side body 103 is set to D1, D1 is more than length d.The material of housing is in addition, the so-called engineering plastics such as polyphenylene sulfide (PPS), polybutylene terephthalate (PBT).
By bending like this, until the fore-end of terminal 100 is towards bottom surface angled downward from horizontal about the θ of recess, even if thus have resilience, terminal also can level.In other words, terminal 100 can be made parallel with the first type surface S1 of upper body 103.
For the terminal part utilizing the bending method of such semiconductor module terminal to bend, the height dimension from the installed surface of semiconductor module to terminal can be limited in the required precision of high accuracy model, the scope of namely ± 0.15mm.
Point important in the utility model arranges to be called the first fulcrum and such two fulcrums of the second fulcrum.Compare with the situation only having a fulcrum to carry out bending, with two fulcrum dispersion resiliences, springback capacity is suppressed to less, easily with the horizontal level contraposition as target.
In above-described explanation, as shown in Fig. 4 (a) and (b), the situation of to be the shape of the housing between the first fulcrum and the second fulcrum be even shape 20, but this shape also can be depicted as Fig. 4 (c) shape 21 protruded downwards, or also can be depicted as shape 22 protruding upward as Fig. 4 (d).Moreover, various shape can be adopted in scope of the present utility model, as step-like etc.
In above-described explanation, describe for a terminal, but as illustrated in Fig. 9 etc. as prior art, the quantity of terminal also can be the multiple terminals of row.
In addition, at the part place corresponding with the first fulcrum and the second fulcrum, terminal also can have groove, and this groove is parallel to the direction of terminal and body contact.The example of the leading section of this terminal illustrates at Fig. 6.The end view of leading section has been shown in Fig. 6 (a), and in figure (b), the front view of leading section has been shown, this terminal 100 has groove 30 at leading section.In addition, the terminal front end part of Fig. 6 is provided with the hole that screw is installed.By shown in Fig. 6 have the terminal of groove bend after state illustrate at Fig. 7.
In above explanation, housing is that above side body is illustrated with the mode that lower side body is separated like this, but all applicable the utility model of shape of housing in any case.
By the utility model, when processing terminal by bending, the terminal after being bent also can be made to be level.As a result, the correction operation of dimensional accuracy is improved after not needing jogged terminal end.
In addition, because part changes product mold and applicable the utility model, therefore also easily existing procucts can be applicable to.
Label declaration
1 first fulcrum
2 second fulcrums
The recess that 3 housings are arranged
11 first contacts wire
12 second contacts wire
The flat shape of the housing between 20 first fulcrums and the second fulcrum
The downward convex shape of the housing between 21 first fulcrums and the second fulcrum
The shape that raises up of the housing between 22 first fulcrums and the second fulcrum
30 grooves
100 terminals
101 control terminals
102 times side bodies
Side body on 103
104 borings
105 hex boltss
200 pressing fixtures
300 power
Claims (8)
1. a semiconductor module, comprising: housing, and this housing is provided with circuit component parts; And terminal, this terminal is electrically connected with this circuit component parts and is fixed, and stretches out upward from this housing, it is characterized in that,
The structure of described housing comprises: the first fulcrum, and described first fulcrum is the fulcrum that terminal touches during initial and this body contact when being just bent on the housing; Second fulcrum, described second fulcrum is the fulcrum that terminal touches during last and this body contact when being just bent on the housing; And the recess in the scope to be bent at described terminal,
Utilize the first fulcrum of described housing and the second fulcrum to bend described terminal, make the interarea of the front end of this terminal and described housing almost parallel.
2. semiconductor module as claimed in claim 1, it is characterized in that, this housing comprises: for the through hole that described terminal is through; First fulcrum, this first fulcrum is formed at the peristome of described through hole; And second fulcrum, this second fulcrum is formed in than the position of described first fulcrum further from described through hole.
3. semiconductor module as claimed in claim 2, is characterized in that,
Described housing is made up of lower side body and the upper side body that covers on lower side body,
Described circuit component parts is installed on described lower side body,
Described upper side body comprises: described through hole, described first fulcrum, described second fulcrum and the described recess adjacent with described second fulcrum.
4. as claimed in claim 2 or claim 3 semiconductor module, is characterized in that, the shape of the described housing between described first fulcrum and described second fulcrum is even shape, the shape that raises up or any one shape downwards in convex shape.
5. semiconductor module as claimed in claim 2 or claim 3, is characterized in that, forms described second fulcrum with the bottom surface relative to described first fulcrum and described recess from the mode that described housing is outstanding.
6. semiconductor module as claimed in claim 5, it is characterized in that, described bottom surface is inclined relative to the interarea of described housing.
7. semiconductor module as claimed in claim 2 or claim 3, is characterized in that,
Described second fulcrum is positioned on the upside of described first fulcrum, distance between the two from be substantially equal to described terminal thickness of slab 1/2nd to the thickness of slab being substantially equal to described terminal, described first fulcrum and described second fulcrum distance are in the horizontal direction from the thickness of slab being substantially equal to described terminal to 2 times of thickness of slab being substantially equal to described terminal.
8. semiconductor module as claimed in claim 2 or claim 3, is characterized in that,
At the part place corresponding with the first fulcrum and the second fulcrum, described terminal has groove, and described groove is parallel with the direction of body contact with terminal.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-160497 | 2012-07-19 | ||
| JP2012160497A JP2015173138A (en) | 2012-07-19 | 2012-07-19 | Method of manufacturing terminal of semiconductor module |
| PCT/JP2013/069546 WO2014014066A1 (en) | 2012-07-19 | 2013-07-18 | Method for bending semiconductor module terminal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204680664U true CN204680664U (en) | 2015-09-30 |
Family
ID=49948888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201390000610.0U Expired - Lifetime CN204680664U (en) | 2012-07-19 | 2013-07-18 | Semiconductor module |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2015173138A (en) |
| CN (1) | CN204680664U (en) |
| WO (1) | WO2014014066A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113728427A (en) * | 2020-03-23 | 2021-11-30 | 株式会社三社电机制作所 | Semiconductor device with a plurality of semiconductor chips |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20210001926A (en) | 2019-06-28 | 2021-01-06 | 주식회사 오성디스플레이 | OLED display device and the method for manufacturing method for the back cover of which |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0472748A (en) * | 1990-07-13 | 1992-03-06 | Mitsubishi Electric Corp | Semiconductor device |
| JPH0864722A (en) * | 1994-08-26 | 1996-03-08 | Sanyo Electric Co Ltd | Hybrid integrated circuit device |
| JPH10256411A (en) * | 1997-03-12 | 1998-09-25 | Sansha Electric Mfg Co Ltd | Semiconductor module for power |
-
2012
- 2012-07-19 JP JP2012160497A patent/JP2015173138A/en active Pending
-
2013
- 2013-07-18 WO PCT/JP2013/069546 patent/WO2014014066A1/en active Application Filing
- 2013-07-18 CN CN201390000610.0U patent/CN204680664U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113728427A (en) * | 2020-03-23 | 2021-11-30 | 株式会社三社电机制作所 | Semiconductor device with a plurality of semiconductor chips |
| CN113728427B (en) * | 2020-03-23 | 2023-11-21 | 株式会社三社电机制作所 | Semiconductor device with a semiconductor device having a plurality of semiconductor chips |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2015173138A (en) | 2015-10-01 |
| WO2014014066A1 (en) | 2014-01-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20150930 |