CN204668938U - Mixed DC fault treating apparatus, Hybrid HVDC system - Google Patents
Mixed DC fault treating apparatus, Hybrid HVDC system Download PDFInfo
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- CN204668938U CN204668938U CN201520371799.5U CN201520371799U CN204668938U CN 204668938 U CN204668938 U CN 204668938U CN 201520371799 U CN201520371799 U CN 201520371799U CN 204668938 U CN204668938 U CN 204668938U
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Abstract
The utility model discloses mixed DC fault treating apparatus, comprise a semiconductor switch device; Or comprise at least two semiconductor switch devices of connecting successively; Or comprise the semiconductor switch device of at least two reverse parallel connections; Or comprise at least one semiconductor switch device and at least one resistance; Or comprise semiconductor switch device and at least one resistance of at least two reverse parallel connections; Be connected in parallel between the DC side bus of voltage source converter and the earth, or between DC side positive and negative busbar, or be arranged on above-mentioned two places simultaneously, or and be connected between voltage source converter submodule two ends.The utility model, by triggering and conducting semiconductor switch device, prevents from causing DC line or submodule capacitance overvoltage during DC Line Fault.The utility model can be determined to install number and place according to requirement of engineering, decides which device of triggering and conducting according to different failure strategy.
Description
Technical field
The utility model belongs to Hybrid HVDC field, relating to one, to be applied at least one end be thyristor converter device, one end is fault treating apparatus, system and fault handling method in the Hybrid HVDC system of voltage source converter composition, particularly mixed DC fault treating apparatus, Hybrid HVDC system.
Background technology
HVDC (High Voltage Direct Current) transmission system can be divided into two types: based on the Traditional DC transmission system (LCC-HVDC) of thyristor technology; Based on the flexible direct current power transmission system (Flexible-HVDC) of all-controlling power electronics device technology.Traditional DC transmission system (LCC-HVDC) cost is low, loss is little, running technology is ripe, at present, the DC transmission system run in the world is nearly all LCC-HVDC system, but there is the easy commutation failure of inverter side in Traditional DC transmission system (LCC-HVDC), strong to the dependence of AC system; Absorb idle in a large number, the shortcomings such as current conversion station floor space is large.The flexible direct current power transmission system (Flexible-HVDC) of a new generation then can realize active power and reactive power uneoupled control, can power to passive network, compact conformation floor space is little, there is not the advantages such as commutation failure fault, but also exist with high costs, cannot effectively process the defects such as DC side fault.Therefore the Hybrid HVDC in conjunction with Traditional DC transmission of electricity and flexible DC power transmission will have future in engineering applications.Hybrid HVDC system one end that the utility model relates to is the LCC-HVDC based on thyristor technology, one end is the voltage source converter that all-controlling power electronics device is formed, the topological structure of current mixing two-terminal direct current transmission system mainly contains the mixing two-terminal direct current transmission system of the mixing two-terminal direct current transmission system of symmetrical monopolar wiring as shown in Figure 1 and the bipolar wiring of symmetry shown in Fig. 2, and the voltage source converter in Fig. 1 or Fig. 2 and the position of LCC-HVDC can exchange.This system combines that Traditional DC transmission losses is little, running technology is ripe and flexible DC power transmission can be powered to passive network, the advantage of commutation failure can not occur.
Long distance powedr transmission is generally to reduce investment outlay and usually adopts overhead transmission line, and when DC power transmission line adopts overhead wire, the reasons such as thunderbolt may cause the over-voltage breakdown of overhead line structures etc., and DC line short trouble occurs.
After voltage source converter end breaks down, the locking immediately of voltage-source type converter valve also sends trip signal, other respectively station through a communication or electric parameters monitoring also locking tripping thereupon of missing the stop.Due to the locking time delay of each station and the existence of tripping operation time delay, the direct current afterflow characteristic of LCC-HVDC in addition, there will be this state: after voltage source converter end failure locking, DC bus there will be larger overvoltage, and residual voltage appears in ac bus simultaneously.This voltage can be continued to submodule capacitor charging by switching device anti-paralleled diode, and charging process may cause submodule capacitance overvoltage.
From the above mentioned, during voltage source converter end failure locking, the residual voltage of AC and DC side can make the serious overvoltage of submodule electric capacity, also can cause DC line overvoltage simultaneously.The scheme had in prior art is only set forth lightning overvoltage and the guard method of switching overvoltage and the collocation strategy of lightning arrester; and only considered the situation of flexible direct-current transmission field; do not consider the complex situations in Hybrid HVDC field; in order to overcome this defect; the utility model provides a kind of device; when voltage source converter end failure locking, for busbar voltage provides discharge path, thus DC bus overvoltage and submodule capacitance overvoltage can be prevented.
Utility model content
The purpose of this utility model, be the fault handling method that a kind of mixed DC fault treating apparatus and Hybrid HVDC system are provided, it reduces by being discharged over the ground through semiconductor switch device or semiconductor switch device and resistance by bus the DC bus overvoltage that voltage-source type converter valve idle interval causes, ac bus residual voltage, thus prevent the biased voltage difference caused of DC bus overvoltage and direct voltage and alternating voltage from causing submodule overvoltage to brachium pontis submodule capacitor charging.
In order to reach above-mentioned purpose, the technical solution adopted in the utility model is: mixed DC fault treating apparatus, is characterized in that: comprise a semiconductor switch device; Or comprise at least two semiconductor switch devices of connecting successively; Or comprise the semiconductor switch device of at least two reverse parallel connections; Or comprise at least one semiconductor switch device and at least one resistance; Or comprise semiconductor switch device and at least one resistance of at least two reverse parallel connections; At least one semiconductor switch device described and at least one resistance adopt the mode be connected in series, and semiconductor switch device and at least one resistance of described at least two reverse parallel connections adopt the mode be connected in series;
During work, in described mixed DC fault treating apparatus selection following manner, one or more are installed: and be connected between the DC side bus of voltage source converter and the earth; And be connected between DC side bus; And be connected between voltage source converter submodule two ends; And be connected between brachium pontis reactance and DC side bus; And be connected between AC bus and the earth;
Described semiconductor switch device charges normal at voltage source converter, remain cut-off state in releasing process, does not affect the normal operation of Hybrid HVDC system.
In such scheme: described semiconductor switch device is half control type switching device thyristor SCR, or full-controlled switch device IGBT, IGCT, IEGT or GTO.
In such scheme: described semiconductor switch device is single semiconductor switch device, or multiple semiconductor switch device is connected and/or parallel connection.
In such scheme: described resistance is single resistance, or multiple resistant series and/or parallel connection.
In such scheme: described DC side bus comprises described voltage source converter positive electrode bus and described voltage source converter negative electrode bus; Refer between described voltage source converter positive electrode bus and described voltage source converter negative electrode bus between described DC side bus.
In such scheme: described and be connected in and refer between brachium pontis reactance with DC side bus simultaneously and be connected between the upper brachium pontis reactance of the same phase of voltage source converter and direct-flow positive pole bus, between lower brachium pontis reactance and direct current negative electrode bus; Or simultaneously and between the one end being connected in the upper brachium pontis reactance of the same phase of voltage source converter and direct-flow positive pole bus, between the other end of upper brachium pontis reactance and direct current negative electrode bus; Or simultaneously and between the one end being connected in the lower brachium pontis reactance of the same phase of voltage source converter and direct-flow positive pole bus, between the other end of lower brachium pontis reactance and direct current negative electrode bus; Or simultaneously and be connected in the upper brachium pontis reactance of the same phase of voltage source converter and between the tie point of lower brachium pontis reactance and direct-flow positive pole bus; Between the tie point of upper brachium pontis reactance and lower brachium pontis reactance and direct current negative electrode bus.
In such scheme: mixed DC fault treating apparatus is also connected between a certain phase brachium pontis reactance of voltage source converter and DC side bus; Or and be connected between certain reactance of two-phase brachium pontis and DC side bus of voltage source converter; Or and be connected between the three-phase brachium pontis reactance of voltage source converter and DC side bus;
In such scheme: described AC bus comprises voltage source converter top-cross stream A phase bus, B phase bus and C phase bus.
In such scheme: the submodule forming voltage source converter brachium pontis be following one or more: semi-bridge type, bridge-type, class bridge-type, the modular type of clamp Shuangzi, or the improvement type of above topology.
In such scheme: the switching device forming submodule is full-controlled switch device, described full-controlled switch device adopts IGBT, IGCT, IEGT or GTO.
For realizing above-mentioned technical purpose, the another kind of technical scheme that the utility model is taked is: Hybrid HVDC system, comprises thyristor converter device and voltage source converter, it is characterized in that: also comprise above-mentioned mixed DC fault treating apparatus.
After adopting such scheme, the beneficial effects of the utility model are:
1) a kind of mixed DC fault treating apparatus of providing of the utility model, effectively can process the fault of voltage source converter end, and structure is simple, easy for installation, has higher economy;
2) a kind of mixed DC fault treating apparatus of providing of the utility model, does not come into operation at the normal operation period of Hybrid HVDC system, does not affect the normal operational energy of Hybrid HVDC system;
3) a kind of mixed DC fault treating apparatus of providing of the utility model; effectively can process the various faults of voltage source converter end in Hybrid HVDC system; busbar voltage discharge path is formed during voltage source converter end failure locking; quick reduction bus residual voltage; prevent DC bus and submodule capacitance overvoltage, better proterctive equipment safety.
Accompanying drawing explanation
The mixing two-terminal direct current transmission system schematic diagram of Fig. 1 symmetrical monopolar wiring.
The mixing two-terminal direct current transmission system schematic diagram of the symmetrical bipolar wiring of Fig. 2.
A kind of mixed DC fault treating apparatus structural representation be made up of single semiconductor switch device of Fig. 3;
A kind of mixed DC fault treating apparatus structural representation be made up of single semiconductor switch device and single resistant series of Fig. 4;
A kind of mixed DC fault treating apparatus structural representation be made up of two semiconductor switch device inverse parallels of Fig. 5;
Fig. 6 is a kind of by two semiconductor switch device inverse parallels and the mixed DC fault treating apparatus structural representation formed in series with a resistor;
A kind of mixed DC fault treating apparatus structural representation be made up of multiple semiconductor switch device of Fig. 7;
A kind of mixed DC fault treating apparatus structural representation be made up of multiple semiconductor switch device and resistant series of Fig. 8;
Fig. 9 mixed DC fault treating apparatus is installed on current conversion station DC side structural representation;
Figure 10 mixed DC fault treating apparatus is installed on current conversion station AC structural representation;
Figure 11 mixed DC fault treating apparatus is installed on current conversion station DC side and AC structural representation simultaneously;
Figure 12 mixed DC fault treating apparatus is installed on structural representation between the brachium pontis reactance of converter phase and DC bus;
Figure 13 mixed DC fault treating apparatus is installed on structural representation between the brachium pontis reactance of converter two-phase and DC bus;
Figure 14 mixed DC fault treating apparatus is installed on structural representation between the brachium pontis reactance of converter three-phase and DC bus;
Figure 15 voltage source converter submodule group structural representation;
Figure 16 mixed DC fault treating apparatus is installed on bridge-type sub modular structure schematic diagram;
Figure 17 mixed DC fault treating apparatus is installed on semi-bridge type sub modular structure schematic diagram;
Figure 18 mixed DC fault treating apparatus is installed on A type class bridge-type sub modular structure schematic diagram.
Figure 19 mixed DC fault treating apparatus is installed on Type B class bridge-type sub modular structure schematic diagram.
Embodiment
Below with reference to drawings and the specific embodiments, the technical solution of the utility model is described in detail.
Embodiment 1
The utility model provides mixed DC fault treating apparatus, comprises a semiconductor switch device; Or comprise at least two semiconductor switch devices of connecting successively; Or comprise the semiconductor switch device of at least two reverse parallel connections; Or comprise at least one semiconductor switch device and at least one resistance; Or comprise semiconductor switch device and at least one resistance of at least two reverse parallel connections; At least one semiconductor switch device described and at least one resistance adopt the mode be connected in series, and semiconductor switch device and at least one resistance of described at least two reverse parallel connections adopt the mode be connected in series;
During work, in described mixed DC fault treating apparatus selection following manner, one or more are installed: and be connected between the DC side bus of voltage source converter and the earth; And be connected between DC side bus; And be connected between voltage source converter submodule two ends; And be connected between brachium pontis reactance and DC side bus; And be connected between AC bus and the earth;
Described semiconductor switch device charges normal at voltage source converter, remain cut-off state in releasing process, does not affect the normal operation of Hybrid HVDC system.
Figure 1 shows that the mixing two-terminal direct current transmission system schematic diagram of symmetrical monopolar wiring, Figure 2 shows that the mixing two-terminal direct current transmission system schematic diagram of symmetrical bipolar wiring, Fig. 1, in Fig. 2, one end is LCC converter, one end is voltage source converter, in Fig. 1, Fig. 2,13 is modular multilevel converter valve valve body.
Figure 3 shows that a kind of mixed DC fault treating apparatus structural representation of single semiconductor switch device, comprise the first terminal 1 in parallel for connecting one end of Hybrid HVDC system busbar and described device, second terminal 2 in parallel is for connecting the other end and the earth of described device, 3 is semiconductor switch device, both can be half control type switching device thyristor SCR, also can be full-controlled switch device IGBT, IGCT, IEGT or GTO.
Figure 4 shows that a kind of mixed DC fault treating apparatus structural representation be made up of single semiconductor switch device and single resistant series; Comprise the first terminal 1 in parallel for connecting one end of Hybrid HVDC system busbar and described device, the second terminal 3 in parallel is for connecting the other end and the earth of described device.Negative electrode (if half control type switching device, be then called negative electrode, if full-controlled switch device is then called emitter, relate to negative electrode if following, be then identical) and the resistance 5 of described semiconductor switch device 4 are series at 2.Described resistance 5 can be single resistance, also can be formed by multiple resistant series.During conventional operation, semiconductor switch device 4 remains cut-off state, externally presents off-resistances, and connecting with resistance 5 forms high resistant branch road.During voltage source converter protection blocking, semiconductor switch device 4 is triggered conducting, and its equivalent resistance is down to low-resistance rapidly, and bus discharges over the ground through resistance 5.
Figure 5 shows that a kind of mixed DC fault treating apparatus structural representation be made up of two semiconductor switch device inverse parallels; Comprise the first terminal 1 in parallel for connecting one end of Hybrid HVDC system busbar and described device, the second terminal 3 in parallel is for connecting the other end and the earth of described device.The negative electrode of semiconductor switch device 3 and the anode of semiconductor switch device 4 are (if half control type switching device, then be called anode, if full-controlled switch device is then called collector electrode, if anode is related to following, then identical) be parallel to 1, the anode of semiconductor switch device 3 and the negative electrode of semiconductor switch device 4 are parallel to 2.During conventional operation, semiconductor switch device 3 and semiconductor switch device 4 remain cut-off state; externally present off-resistances; during voltage source converter protection blocking; semiconductor switch device 3 or semiconductor switch device 4; or semiconductor switch device 3 and semiconductor switch device 4 are triggered conducting, its equivalent resistance is down to low-resistance rapidly.
Figure 6 shows that and to be a kind ofly in series the mixed DC fault treating apparatus structural representation formed with single resistance by two semiconductor switch device inverse parallels; Comprise the first terminal 1 in parallel for connecting one end of Hybrid HVDC system busbar and described device, the second terminal 3 in parallel is for connecting the other end and the earth of described device.The negative electrode of semiconductor switch device 5 and the anode of semiconductor switch device 6 are in parallel in terminal 2 and are series at 2 with resistance 4 simultaneously, and the anode of semiconductor switch device 5 and the negative electrode of semiconductor switch device 6 are parallel to 3.Described resistance 4 can be single resistance, also can be formed by multiple resistant series.During conventional operation, semiconductor switch device 5 and semiconductor switch device 6 remain cut-off state, and externally present off-resistances, connecting with resistance 4 forms high resistant branch road.During voltage source converter protection blocking, semiconductor switch device 5 or semiconductor switch device 6, or semiconductor switch device 5 and semiconductor switch device 6 are triggered conducting, and its equivalent resistance is down to low-resistance rapidly, and bus discharges over the ground through resistance 4.
Figure 7 shows that a kind of mixed DC fault treating apparatus structural representation be made up of multiple semiconductor switch device, comprise the first terminal 1 in parallel for connecting one end of Hybrid HVDC system busbar and described device, the second terminal 4 in parallel is for connecting the other end and the earth of described device.Described device is formed by the multiple semiconductor switch devices including but not limited to semiconductor switch device 6 and semiconductor switch device 7.The negative electrode of semiconductor switch device 6 and the anode of next semiconductor switch device are connected in 2, and the anode of semiconductor switch device 7 and the negative electrode of a upper semiconductor switch device are connected in 3.All semiconductor switch devices in described device all adopt same trigger impulse, to be triggered conducting, to turn off when branch current reduces to 0 simultaneously at synchronization, or synchronization is triggered shutoff.
Figure 8 shows that a kind of mixed DC fault treating apparatus structural representation be made up of multiple semiconductor switch device and resistance, comprise the first terminal 1 in parallel for connecting one end of Hybrid HVDC system busbar and described device, the second terminal 5 in parallel is for connecting the other end and the earth of described device.Described device to be connected with resistance 8 by the multiple semiconductor switch device including but not limited to semiconductor switch device 6 and semiconductor switch device 7 and is formed.The negative electrode of semiconductor switch device 6 and the anode of next semiconductor switch device are connected in 2, and the anode of semiconductor switch device 7 and the negative electrode of a upper semiconductor switch device are connected in 3.Negative electrode and the resistance 8 of semiconductor switch device 7 are connected in 4.Described resistance 8 can be single resistance, also can be formed by multiple resistant series.All semiconductor switch devices in described device all adopt same trigger impulse, to be triggered conducting, to turn off when branch current reduces to 0 simultaneously at synchronization, or synchronization is triggered shutoff.
Figure 9 shows that mixed DC fault treating apparatus is installed on current conversion station DC side structural representation.Described voltage source converter mainly comprises valve body 13, direct-flow positive pole smoothing reactor 2, direct current negative pole smoothing reactor 3, direct-flow positive pole terminal 6, direct current negative terminal 7 and ac terminal 8,9,10.Valve body 13 has 5 lead-out terminals, is respectively direct-flow positive pole lead-out terminal 4, direct current negative output terminals 5, interchange A phase output terminals 8, alternating-current B phase output terminals 9, exchanges C phase output terminals 10.Direct-flow positive pole lead-out terminal 4 is connected with one end of direct-flow positive pole smoothing reactor 2, and the other end 6 of direct-flow positive pole smoothing reactor 2 becomes the direct-flow positive pole P of current conversion station, will with direct-flow positive pole connection.Direct current negative output terminals 5 is connected with one end of direct current negative pole smoothing reactor 3, and the other end 7 of direct current negative pole smoothing reactor 3 becomes the direct current negative pole N of current conversion station, will in direct current negative pole connection.Converter valve valve body 13 comprises 6 brachium pontis, and each brachium pontis is composed in series by submodule group 11 or 14 and brachium pontis reactor 12.The submodule group 11 of upper brachium pontis has two lead-out terminals, and one end is as direct-flow positive pole terminal, and the other end is connected with one end of upper brachium pontis reactor 12, and the other end of upper brachium pontis reactor 12 is as interchange phase terminal.The submodule group 14 of lower brachium pontis has two lead-out terminals, and one end is as direct current negative terminal, and the other end is connected with one end of lower brachium pontis reactor 12, and the other end of lower brachium pontis reactor 12 is as interchange phase terminal.The direct-flow positive pole terminal short circuit of three upper brachium pontis as the direct current negative terminal short circuit of lead-out terminal 4, three lower brachium pontis of converter valve valve body 13 as the lead-out terminal 5 of converter valve valve body 13.Every interchange phase terminal going up brachium pontis is mutually connected with the interchange phase terminal of corresponding lower brachium pontis, draws the interchange forming converter valve valve body 13 and exports phase terminal 8,9,10.Mixed DC fault treating apparatus 1 is connected between converter valve direct-flow positive pole and the earth, and anode and the converter valve direct-flow positive pole of its semiconductor switch device are connected in terminal 4, and negative electrode is connected with the earth through resistance.Mixed DC fault treating apparatus 1 is connected between converter valve direct current negative pole and the earth, and the anode of its semiconductor switch device is connected with the earth, and negative electrode is connected in terminal 5 through resistance and converter valve direct current negative pole.Described mixed DC fault treating apparatus 1 both can be arranged on direct-flow positive pole in the manner aforesaid, also can be arranged on direct current negative pole in the manner aforesaid, also can be installed on direct-flow positive pole and direct current negative pole in the manner aforesaid simultaneously.Semiconductor switch device in described mixed DC fault treating apparatus 1 and resistance order can be exchanged, but the sensing of semiconductor switch device from anode to negative electrode is constant.Described mixed DC fault treating apparatus 1 also can be structure as shown in Figure 3, be made up of single semiconductor switch device, or the structure shown in Fig. 5, or the structure shown in Fig. 6, or the structure shown in Fig. 7, be made up of multiple semiconductor switch device connection in series-parallel, or the structure shown in Fig. 8, form by multiple semiconductor switch device is in series with a resistor.The submodule of described converter valve valve body 13 can be full bridge structure as shown in figure 16, also can be half-bridge structure as shown in figure 17, or the structure that full-bridge is combined with half-bridge, also can be the A type class full bridge structure shown in Figure 18 simultaneously, or the Type B class full bridge structure shown in Figure 19.
Figure 10 shows that mixed DC fault treating apparatus is installed on current conversion station AC structural representation.Mixed DC fault treating apparatus 1 is connected between the AC phase bus of voltage-source type converter valve and the earth, and the anode 16 of semiconductor switch device is connected with ac bus, and the negative electrode of semiconductor switch device is connected with the earth through resistance.Semiconductor switch device in described mixed DC fault treating apparatus 1 and resistance order can be exchanged, but the sensing of semiconductor switch device from anode to negative electrode is constant.
Described mixed DC fault treating apparatus 1 both can be installed on DC side, also can be installed on AC, also can be installed on DC side and the AC of current conversion station, as shown in figure 11 simultaneously.
Figure 12 shows that mixed DC fault treating apparatus is installed on structural representation between the brachium pontis reactance of converter phase and DC bus.Described voltage source converter mainly comprises valve body 13, direct-flow positive pole smoothing reactor 2, direct current negative pole smoothing reactor 3, direct-flow positive pole terminal 6, direct current negative terminal 7 and ac terminal 8,9,10.Valve body 13 has 5 lead-out terminals, is respectively direct-flow positive pole lead-out terminal 4, direct current negative output terminals 5, interchange A phase output terminals 8, alternating-current B phase output terminals 9, exchanges C phase output terminals 10.Direct-flow positive pole lead-out terminal 4 is connected with one end of direct-flow positive pole smoothing reactor 2, and the other end 6 of direct-flow positive pole smoothing reactor 2 becomes the direct-flow positive pole P of current conversion station, will with direct-flow positive pole connection.Direct current negative output terminals 5 is connected with one end of direct current negative pole smoothing reactor 3, and the other end 7 of direct current negative pole smoothing reactor 3 becomes the direct current negative pole N of current conversion station, will in direct current negative pole connection.Converter valve valve body 13 comprises 6 brachium pontis, and each brachium pontis is composed in series by submodule group 11 or 14 and brachium pontis reactor 12.The submodule group 11 of upper brachium pontis has two lead-out terminals, mixed DC failed equipment 21 is also connected between this two-terminal, one end in these two terminals is as direct-flow positive pole terminal, and the other end is connected with one end of upper brachium pontis reactor 12, and the other end of upper brachium pontis reactor 12 is as interchange phase terminal.The submodule group 14 of lower brachium pontis has two lead-out terminals, mixed DC failed equipment 21 is also connected between this two-terminal, one end in these two terminals is as direct current negative terminal, and the other end is connected with one end of lower brachium pontis reactor 12, and the other end of lower brachium pontis reactor 12 is as interchange phase terminal.The direct-flow positive pole terminal short circuit of three upper brachium pontis as the direct current negative terminal short circuit of lead-out terminal 4, three lower brachium pontis of converter valve valve body 13 as the lead-out terminal 5 of converter valve valve body 13.Every interchange phase terminal going up brachium pontis is mutually connected with the interchange phase terminal of corresponding lower brachium pontis, draws the interchange forming converter valve valve body 13 and exports phase terminal 8,9,10.Described mixed DC fault treating apparatus 21 both can be arranged in a phase in the manner aforesaid, also can be arranged in certain two-phase of converter as shown in figure 13, also can be arranged in the three-phase of converter as shown in figure 14.Described mixed DC fault treating apparatus 21 can be structure as shown in Figure 3, be made up of single semiconductor switch device, or structure as shown in Figure 4, form by single semiconductor switch device is in series with a resistor, or the structure shown in Fig. 5, or the structure shown in Fig. 6, or the structure shown in Fig. 7, be made up of multiple semiconductor switch device connection in series-parallel, or the structure shown in Fig. 8, form by multiple semiconductor switch device is in series with a resistor.The submodule of described converter valve valve body 13 can be full bridge structure as shown in figure 16, also can be half-bridge structure as shown in figure 17, or the structure that full-bridge is combined with half-bridge, also can be the A type class full bridge structure shown in Figure 18 simultaneously, or the Type B class full bridge structure shown in Figure 19.
Be voltage source converter submodule group structural representation as shown in figure 15, be in series by two lead-out terminals of submodule 11 are end to end.The terminal 2 of submodule 11 is connected with the terminal 1 of next son module, and the terminal 2 of next son module is connected with the terminal 1 of next son module again.The terminal 1 of first submodule and the terminal 2 of last submodule form two lead-out terminals of converter valve submodule group.
As the 16 sub modular structure schematic diagrames being depicted as bridge-type, the emitter of shutdown switch device 1 can connect the collector electrode of turn-off device 2, and this tie point 6 is as one of the lead-out terminal of submodule.The collector electrode of shutdown switch device 1 can be connected with the collector electrode of turn-off device 4, and receive one end of submodule electric capacity 3; Can shutdown switch device 2 emitter with can the emitter of shutdown switch device 5 be connected, and receive the other end of submodule electric capacity 3.Can shutdown switch device 4 emitter with can the collector electrode of shutdown switch device 5 be connected, and this tie point 7 is as another lead-out terminal of submodule, mixed DC fault treating apparatus 20 is connected between terminal 6 and terminal 7, mixed DC fault treating apparatus 20 is the structure shown in Fig. 3, or be the structure shown in Fig. 4, or be the structure shown in Fig. 5, or be the structure shown in Fig. 6.
Be the sub modular structure schematic diagram of semi-bridge type as shown in figure 17, the emitter of shutdown switch device 1 can connect the collector electrode of turn-off device 2, and this tie point 6 is as one of the lead-out terminal of submodule.One end of submodule electric capacity 3 is connected to the collector electrode of turn-off device 1, the other end of submodule electric capacity 3 is connected to can the emitter of shutdown switch device 2, and this tie point 7 is as another lead-out terminal of submodule, mixed DC fault treating apparatus 20 is connected between terminal 6 and terminal 7, mixed DC fault treating apparatus 20 is the structure shown in Fig. 3, or be the structure shown in Fig. 4, or be the structure shown in Fig. 5, or be the structure shown in Fig. 6.
Be the sub modular structure schematic diagram of A type class bridge-type as shown in figure 18, the emitter of shutdown switch device 1 can connect the collector electrode of turn-off device 2, and this tie point 6 is as one of the lead-out terminal of submodule.The collector electrode of shutdown switch device 1 can be connected with the negative electrode of diode 4, and receive one end of submodule electric capacity 3; Can shutdown switch device 2 emitter with can the emitter of shutdown switch device 5 be connected, and receive the other end of submodule electric capacity 3.The anode of diode 4 with can the collector electrode of shutdown switch device 5 be connected, and this tie point 7 is as another lead-out terminal of submodule, mixed DC fault treating apparatus 20 is connected between terminal 6 and terminal 7, mixed DC fault treating apparatus 20 is the structure shown in Fig. 3, or be the structure shown in Fig. 4, or the structure shown in Fig. 5, or be the structure shown in Fig. 6.Type B class full-bridge sub modular structure shown in Figure 19 and Figure 18 similar.
Above embodiment is only and technological thought of the present utility model is described; protection range of the present utility model can not be limited with this; every technological thought according to the utility model proposes, any change that technical scheme basis is done, all falls within the utility model protection range.
Claims (11)
1. mixed DC fault treating apparatus, is characterized in that: comprise a semiconductor switch device; Or comprise at least two semiconductor switch devices of connecting successively; Or comprise the semiconductor switch device of at least two reverse parallel connections; Or comprise at least one semiconductor switch device and at least one resistance; Or comprise semiconductor switch device and at least one resistance of at least two reverse parallel connections; At least one semiconductor switch device described and at least one resistance adopt the mode be connected in series, and semiconductor switch device and at least one resistance of described at least two reverse parallel connections adopt the mode be connected in series;
During work, in described mixed DC fault treating apparatus selection following manner, one or more are installed: and be connected between the DC side bus of voltage source converter and the earth; And be connected between DC side bus; And be connected between voltage source converter submodule two ends; And be connected between brachium pontis reactance and DC side bus; And be connected between AC bus and the earth;
Described semiconductor switch device charges normal at voltage source converter, remain cut-off state in releasing process, does not affect the normal operation of Hybrid HVDC system.
2. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: described semiconductor switch device is half control type switching device thyristor SCR, or full-controlled switch device IGBT, IGCT, IEGT or GTO.
3. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: described semiconductor switch device is single semiconductor switch device, or multiple semiconductor switch device is connected and/or parallel connection.
4. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: described resistance is single resistance, or multiple resistant series and/or parallel connection.
5. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: described DC side bus comprises described voltage source converter positive electrode bus and described voltage source converter negative electrode bus; Refer between described voltage source converter positive electrode bus and described voltage source converter negative electrode bus between described DC side bus.
6. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: mixed DC fault treating apparatus is also connected between a certain phase brachium pontis reactance of voltage source converter and DC side bus; Or and be connected between certain reactance of two-phase brachium pontis and DC side bus of voltage source converter; Or and be connected between the three-phase brachium pontis reactance of voltage source converter and DC side bus.
7. mixed DC fault treating apparatus as claimed in claim 1, it is characterized in that: described and be connected in and refer between brachium pontis reactance with DC side bus simultaneously and be connected between the upper brachium pontis reactance of the same phase of voltage source converter and direct-flow positive pole bus, between lower brachium pontis reactance and direct current negative electrode bus; Or simultaneously and between the one end being connected in the upper brachium pontis reactance of the same phase of voltage source converter and direct-flow positive pole bus, between the other end of upper brachium pontis reactance and direct current negative electrode bus; Or simultaneously and between the one end being connected in the lower brachium pontis reactance of the same phase of voltage source converter and direct-flow positive pole bus, between the other end of lower brachium pontis reactance and direct current negative electrode bus; Or simultaneously and be connected in the upper brachium pontis reactance of the same phase of voltage source converter and between the tie point of lower brachium pontis reactance and direct-flow positive pole bus; Between the tie point of upper brachium pontis reactance and lower brachium pontis reactance and direct current negative electrode bus.
8. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: described AC bus comprises voltage source converter top-cross stream A phase bus, B phase bus and C phase bus.
9. mixed DC fault treating apparatus as claimed in claim 1, is characterized in that: the submodule forming voltage source converter brachium pontis be following one or more: semi-bridge type, bridge-type, class bridge-type, the modular type of clamp Shuangzi.
10. mixed DC fault treating apparatus as claimed in claim 1, it is characterized in that: the switching device forming submodule is full-controlled switch device, described full-controlled switch device adopts IGBT, IGCT, IEGT or GTO.
11. 1 kinds of Hybrid HVDC systems, comprise thyristor converter device and voltage source converter, it is characterized in that: also comprise the mixed DC fault treating apparatus described in any one of claim 1-10.
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