CN204652522U - A kind of camera dynamic switching circuit structure - Google Patents

A kind of camera dynamic switching circuit structure Download PDF

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Publication number
CN204652522U
CN204652522U CN201520427336.6U CN201520427336U CN204652522U CN 204652522 U CN204652522 U CN 204652522U CN 201520427336 U CN201520427336 U CN 201520427336U CN 204652522 U CN204652522 U CN 204652522U
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Prior art keywords
circuit
effect transistor
field effect
camera
cut
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CN201520427336.6U
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台学亮
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DONGGUAN FUCHI ELECTRONICS TECHNOLOGY Co Ltd
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DONGGUAN FUCHI ELECTRONICS TECHNOLOGY Co Ltd
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Abstract

The utility model discloses a kind of camera dynamic switching circuit structure, comprise photo resistance Acquisition Circuit, delay circuit, field effect transistor control circuit, infrared lamp circuit, IR-CUT circuit and camera circuit, the output of described photo resistance Acquisition Circuit connects the input of delay circuit, delay circuit output connects the input of field effect transistor control circuit, the output of field effect transistor control circuit connects the input of infrared lamp circuit and IR-CUT circuit respectively, and the output of IR-CUT circuit connects the input of camera circuit.The magnitude of voltage control infrared lamp circuit that photo resistance Acquisition Circuit of the present utility model collection is concrete and IR-CUT circuit, time-division on daytime extinguishes infrared lamp and IR-CUT is switched to state on daytime, time-division at night lights infrared lamp and IR-CUT is switched to state at night, by day or all can reach the effect of high definition wide dynamic camera night, structure is simple, reduces cost.

Description

A kind of camera dynamic switching circuit structure
Technical field
The utility model relates to camera dynamic switching circuit structure, particularly relates to the circuit structure of the wide dynamic camera of a kind of high definition.
Background technology
Camera (CAMERA or WEBCAM) is also called camera computer, computer eye, electronic eyes etc., is a kind of video input apparatus, is applied to video conference widely, the aspects such as tele-medicine and monitoring in real time.Common people also can to carry out at network each other by camera having image, have the talk of sound and communication.In addition, people can also use it for current various popular digital image, sound processing.
High-definition camera refers to the camera of HD 1080P or HD 960P or HD 720P, and being called of 1080P is full HD.High definition has clear and definite regulation in Digital Television, although do not have clear stipulaties in camera, defined the professional etiquette of acquiescence, present high-definition camera starts to popularize gradually, along with the upgrading of next step network bandwidth and the reduction of price, high-definition camera can become mass consumption electronics.
But in the product design of the wide dynamic camera of a lot of high definition, owing to functionally pursuing better quality, often design to obtain more complicated, cause often there will be the not enough situation of MCU resource, the complexity to product design band.Mentioning problem above how efficiently solving, solve problem with minimum pin, is the comparison urgent problems often run in design at present.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, provides a kind of camera dynamic switching circuit structure, and structure is simple, and cost is low.
In order to achieve the above object, the technical solution adopted in the utility model is:
A kind of camera dynamic switching circuit structure, comprise photo resistance Acquisition Circuit, field effect transistor control circuit, infrared lamp circuit, IR-CUT circuit (IR=infrared=infrared ray, CUT=filters, subtracts, IR-CUT refers to two filter, be two filter circuit herein) and camera circuit, the output of described photo resistance Acquisition Circuit connects the input of field effect transistor control circuit, the output of field effect transistor control circuit connects the input of infrared lamp circuit and IR-CUT circuit respectively, and the output of IR-CUT circuit connects the input of camera circuit.
Further, described photo resistance Acquisition Circuit is made up of photo resistance, and described photo resistance gathers magnitude of voltage, and the output of photo resistance connects the input of field effect transistor control circuit, and described photo resistance gathers magnitude of voltage and is delivered to field effect transistor control circuit.
Further, described camera dynamic switching circuit structure also arranges a delay circuit, and the input of described delay circuit connects the output of photo resistance Acquisition Circuit, and the output of delay circuit connects the input of field effect transistor control circuit.
Further, described delay circuit is RC delay circuit.
Further, described field effect transistor control circuit is made up of metal-oxide-semiconductor field effect transistor.
Further, described metal-oxide-semiconductor field effect transistor is low pressure metal-oxide-semiconductor field effect transistor, and the model of described low pressure metal-oxide-semiconductor field effect transistor is AO3401.
Further, described infrared lamp circuit, is made up of infraluminescence diode, and the input of infraluminescence diode connects the output of field effect transistor control circuit.
Further, described IR-CUT circuit is made up of the two optical-filter switcher of IR-CUT, and the two optical-filter switcher of described IR-CUT comprises IR-cut or absorption filter and full impregnated spectral filter two tablet filter and motor.
Further, described camera circuit is the camera of 1080P, 960P or 720P.
Further, described field effect transistor control circuit and infrared lamp circuit arrange transistor respectively, are arranged in field effect transistor control circuit the accuracy reducing error and control to improve field effect transistor, are arranged at the switch that infrared lamp circuit serves as infrared lamp.
Compared with prior art, the beneficial effects of the utility model are: after photo resistance Acquisition Circuit triggers, accuracy is improved by RC delay circuit, judge it is daytime or night by low pressure metal-oxide-semiconductor field effect transistor control circuit again, the magnitude of voltage control infrared lamp circuit that the collection of photo resistance Acquisition Circuit is concrete and IR-CUT circuit, time-division on daytime extinguishes infrared lamp and IR-CUT is switched to state on daytime, time-division at night lights infrared lamp and IR-CUT is switched to state at night, by day or all can reach the effect of high definition wide dynamic camera night, achieve and guarantee that the wide dynamic camera of high definition day and night all has good image quality to record, applicable resource is more limited but can keep the supervisory control system of good quality, structure is simple, reduce cost.
Accompanying drawing explanation
fig. 1 is principle assumption diagram of the present utility model.
Embodiment
Purport of the present utility model is to overcome the deficiencies in the prior art, provides a kind of camera dynamic switching circuit structure, and by minimum resource, the switching problem at solve complicated infrared lamp and IR-CUT night by day, this structure is simple, greatly reduces cost.Be described in detail, to be interpretated more in-depth technical characteristic of the present utility model and advantage with reference to accompanying drawing below in conjunction with embodiment.
Principle assumption diagram of the present utility model as shown in Figure 1, a kind of camera dynamic switching circuit structure, comprise photo resistance Acquisition Circuit, field effect transistor control circuit, infrared lamp circuit, IR-CUT circuit and camera circuit, the output of described photo resistance Acquisition Circuit connects the input of field effect transistor control circuit, the output of field effect transistor control circuit connects the input of infrared lamp circuit and IR-CUT circuit respectively, and the output of IR-CUT circuit connects the input of camera circuit.Infrared lamp circuit and IR-CUT circuit can improve the image quality that high-definition camera circuit is recorded better.Described camera circuit described in the utility model is the camera of 1080P, 960P or 720P.After photo resistance Acquisition Circuit triggers, judge it is daytime or night by field effect transistor control circuit, the magnitude of voltage control infrared lamp circuit that the collection of photo resistance Acquisition Circuit is concrete and IR-CUT circuit, time-division on daytime extinguishes infrared lamp and IR-CUT is switched to state on daytime, time-division at night lights infrared lamp and IR-CUT is switched to state at night, by day or all can reach the effect of high definition wide dynamic camera night, achieve and guarantee that the wide dynamic camera of high definition day and night all has good image quality to record, applicable resource is more limited but can keep the supervisory control system of good quality, structure is simple, reduce cost.
As preferred embodiment of the present utility model, photo resistance Acquisition Circuit described in the utility model is made up of photo resistance, described photo resistance gathers magnitude of voltage, the output of photo resistance connects the input of field effect transistor control circuit, and described photo resistance gathers magnitude of voltage and is delivered to field effect transistor control circuit.The light of day and night time-division can well be sensed by photo resistance Acquisition Circuit, create the change of magnitude of voltage simultaneously, specifically daytime or night is analyzed again, the switching corresponding trigger feedback to the magnitude of voltage of infrared lamp circuit and IR-CUT circuit controlling day and night by low pressure metal-oxide-semiconductor field effect transistor control circuit.
In order to improve accuracy, camera dynamic switching circuit structure described in the utility model also arranges a delay circuit, the input of described delay circuit connects the output of photo resistance Acquisition Circuit, and the output of delay circuit connects the input of field effect transistor control circuit.Preferably, described delay circuit is RC delay circuit.
Because field effect transistor control circuit controls the magnitude of voltage of infrared lamp circuit and IR-CUT circuit below, in order to reach good control effects, field effect transistor control circuit described in the utility model is made up of metal-oxide-semiconductor field effect transistor that (MOS is named as MOSfet entirely, be generally metal (metal)-oxide (oxide)-semiconductor (semiconductor) field-effect transistor, or claim to be metal-insulator (insulator)-semiconductor).Described metal-oxide-semiconductor field effect transistor is low pressure metal-oxide-semiconductor field effect transistor is use AO3401.Described metal-oxide-semiconductor field effect transistor is low pressure metal-oxide-semiconductor field effect transistor, and the model of described low pressure metal-oxide-semiconductor field effect transistor is AO3401.
Infrared lamp circuit described in the utility model, is made up of infraluminescence diode, and the input of infraluminescence diode connects the output of field effect transistor control circuit.
Further, described IR-CUT circuit is made up of the two optical-filter switcher of IR-CUT, and the two optical-filter switcher of described IR-CUT comprises IR-cut or absorption filter and full impregnated spectral filter two tablet filter and motor.
Further, described field effect transistor control circuit and infrared lamp circuit arrange transistor respectively, are arranged in field effect transistor control circuit the accuracy reducing error and control to improve field effect transistor, are arranged at the switch that infrared lamp circuit serves as infrared lamp.
Operation principle of the present utility model is as follows: when normally not opening intercommunication, and the control end of low pressure metal-oxide-semiconductor field effect transistor control circuit connects the high level signal of 3.3V.When opening intercommunication, the voltage of the control end of low pressure metal-oxide-semiconductor field effect transistor control circuit can drag down into the low level of 0V, described photo resistance Acquisition Circuit gathers daylight noctilucence information, generation magnitude of voltage changes, pass to RC delay circuit to improve accuracy, pass to low pressure metal-oxide-semiconductor field effect transistor control circuit below again, controlled the magnitude of voltage of infrared lamp circuit below by low pressure metal-oxide-semiconductor field effect transistor control circuit again, infrared lamp circuit can be lighted after reaching specified magnitude of voltage.Meanwhile, low pressure metal-oxide-semiconductor field effect transistor control circuit also starts IR-CUT circuit, makes IR-CUT be switched to state at night.In the time-division at night, infrared lamp circuit, IR-CUT circuit can improve the image quality that high-definition camera circuit is recorded very well.This is simple and practical, only just completes the wide dynamic camera of a kind of high definition by a control signal, saves system resource.
Carry out clear, complete description by the technical scheme in above embodiment to the utility model, obviously described embodiment is the embodiment of the utility model part, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.

Claims (10)

1. a camera dynamic switching circuit structure, it is characterized in that: comprise photo resistance Acquisition Circuit, field effect transistor control circuit, infrared lamp circuit, IR-CUT circuit and camera circuit, the output of described photo resistance Acquisition Circuit connects the input of field effect transistor control circuit, the output of field effect transistor control circuit connects the input of infrared lamp circuit and IR-CUT circuit respectively, and the output of IR-CUT circuit connects the input of camera circuit.
2. camera dynamic switching circuit structure according to claim 1, it is characterized in that: described photo resistance Acquisition Circuit is made up of photo resistance, described photo resistance gathers magnitude of voltage, the output of photo resistance connects the input of field effect transistor control circuit, and described photo resistance gathers magnitude of voltage and is delivered to field effect transistor control circuit.
3. camera dynamic switching circuit structure according to claim 1 and 2, it is characterized in that: described camera dynamic switching circuit structure also arranges a delay circuit, the input of described delay circuit connects the output of photo resistance Acquisition Circuit, and the output of delay circuit connects the input of field effect transistor control circuit.
4. camera dynamic switching circuit structure according to claim 3, is characterized in that: described delay circuit is RC delay circuit.
5. camera dynamic switching circuit structure according to claim 1, is characterized in that: described field effect transistor control circuit is made up of metal-oxide-semiconductor field effect transistor.
6. camera dynamic switching circuit structure according to claim 5, is characterized in that: described metal-oxide-semiconductor field effect transistor is low pressure metal-oxide-semiconductor field effect transistor, the model of described low pressure metal-oxide-semiconductor field effect transistor is AO3401.
7. camera dynamic switching circuit structure according to claim 1, is characterized in that: described infrared lamp circuit, is made up of infraluminescence diode, and the input of infraluminescence diode connects the output of field effect transistor control circuit.
8. camera dynamic switching circuit structure according to claim 1, it is characterized in that: described IR-CUT circuit is made up of the two optical-filter switcher of IR-CUT, the two optical-filter switcher of described IR-CUT comprises IR-cut or absorption filter and full impregnated spectral filter two tablet filter and motor.
9. camera dynamic switching circuit structure according to claim 1, is characterized in that: described camera circuit is the camera of 1080P, 960P or 720P.
10. camera dynamic switching circuit structure according to claim 1, is characterized in that: described field effect transistor control circuit and infrared lamp circuit arrange transistor respectively.
CN201520427336.6U 2015-06-19 2015-06-19 A kind of camera dynamic switching circuit structure Active CN204652522U (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106791337A (en) * 2017-02-22 2017-05-31 北京汉邦高科数字技术股份有限公司 Zoom camera and its method of work that a kind of twin-lens optical multiplier is expanded
CN109344020A (en) * 2018-10-25 2019-02-15 深圳市安佳威视信息技术有限公司 Embedded video camera PCBA factory test method and its control method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106791337A (en) * 2017-02-22 2017-05-31 北京汉邦高科数字技术股份有限公司 Zoom camera and its method of work that a kind of twin-lens optical multiplier is expanded
CN109344020A (en) * 2018-10-25 2019-02-15 深圳市安佳威视信息技术有限公司 Embedded video camera PCBA factory test method and its control method
CN109344020B (en) * 2018-10-25 2022-05-20 深圳市安佳威视信息技术有限公司 Embedded camera PCBA delivery test method and control method thereof

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