CN204631289U - A kind of graded index waveguide assembly - Google Patents
A kind of graded index waveguide assembly Download PDFInfo
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- CN204631289U CN204631289U CN201520130434.3U CN201520130434U CN204631289U CN 204631289 U CN204631289 U CN 204631289U CN 201520130434 U CN201520130434 U CN 201520130434U CN 204631289 U CN204631289 U CN 204631289U
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Abstract
The utility model relates to a kind of graded index waveguide assembly, comprise grin lens and covering, grin lens comprises substrate, ducting layer and at least two GRIN layers, the GRIN of the bottom is deposited upon on substrate, ducting layer is between two GRIN layers of arbitrary neighborhood, covering is wrapped in outside grin lens, becomes large by the most GRIN layer of top layer or the GRIN layer of the bottom gradually to the refractive index of ducting layer.The grin lens that the utility model solves in existing waveguide assembly cannot carry out successively photoetching and etching, fidelity is caused to decline, the technical matters that precision reduces, grin lens of the present utility model is made by PLC technology, the advantage of PLC technology be can by GRIN layer in grin lens and ducting layer on the same chip integrated, adopt the grin lens of PLC technology to have single-chip integration, cost is low, the advantage of good reliability.
Description
Technical field
The utility model relates to a kind of graded index waveguide assembly.
Background technology
Graded index wave guide (also referred to as GRIN waveguide or grin lens) has the ability at one or more dimension focused light.This lens property of grin lens can be used for the larger waveguide of coupling two mode spot-sizes difference.Such as, as shown in Fig. 1 a, Fig. 2 a, Fig. 3 a, Fig. 4 a, Fig. 5, may be used for the coupling between optical fiber 1 and smaller szie waveguide.Grin lens also may be used for collimation and the refocusing of Vernonia parishii Hook. F. angle light source (light than semiconductor laser 4 is as shown in Figure 5 launched).The function class of grin lens is like an imaging optic element in this applications.
Fig. 3 utilizes single-chip integration grin lens to carry out optical fiber to the optical waveguide coupled schematic diagram of PLC.Here suppose that optical waveguide and optical fiber have very large difference dimensionally, if optical fiber is direct and PLC is optical waveguide coupled in this case, will higher optical energy loss be had.As the longitdinal cross-section diagram that Fig. 3 a is coupling, the refractive index of GRIN changes in the vertical direction (be y direction according to the coordinate definition in figure).Fig. 3 b on the right is the index distribution of (Y-direction of coordinate axis definition in figure) grin lens in vertical direction.Index distribution is type parabolically, and the highest part of refractive index, at the center of GRIN, reduces gradually away from refractive index of the centre.The variable quantity of refractive index absolute value and refractive index depends on the size of the size of output facula, the length of GRIN, the hot spot needed for optical fiber.GRIN and waveguide are all enclosed in clad material, the refractive index ratio GRIN of usual clad material and the refractive index of waveguide all little, its refractive index is fixing.Light beam enters the input end of grin lens by the output terminal of optical fiber, and light beam converges in grin lens, and the beam sizes that grin lens exports meets the spot size needed for optical waveguide.In this example by selecting suitable GRIN length dimension and index distribution can realize best coupling efficiency.
Fig. 4 a is the vertical view of grin lens.The refractive index of GRIN does not change in transverse direction (the x-axis direction defined in figure).That is, in arbitrary y position, the refractive index in GRIN is in the x-direction evenly (see Fig. 4 b).The width of grin lens is chosen and Optical fiber speckle optimum matching.Once light converges in the waveguide of grin lens end in the vertical direction, can further by the width of the width gradual change of waveguide to any needs.
In Fig. 3 to 4, gradient G RIN lens are used as condenser lens.Grin lens mates the hot spot that the light exported from optical fiber is converged to reduced size with optical waveguide.Same grin lens index distribution also can be used as image-forming component.
Fig. 5 is that the divergent beams of laser emitting are coupled to the schematic diagram of waveguide by grin lens.In this case, the light sent from laser instrument is high divergence.GRIN effect is here caught these divergent beams and readjusts beam sizes to energy and PLC waveguide efficient coupling.Here the imaging grin lens mentioned has identical index distribution with focusing grin lens above, and unique difference is length.
The grin lens of conventional commercial adopts body material and ion exchange technique, and the grin lens that this kind of body material makes is discrete optical element, therefore needs extra encapsulation when this kind of grin lens and other discrete optical elements use simultaneously, operation and cost.Such as, when using discrete grin lens to carry out the coupling of planar optical waveguide (PLC) and optical fiber, grin lens must reach micron dimension simultaneously precise optical with PLC and optical fiber is aimed at, and interelement connecting material must be reliable, stable, transparent, within least ten years, can not lose efficacy.
Shown in Fig. 1 a and Fig. 1 b is prior art.In method for making disclosed in prior art, ducting layer is only defined in the bottom of total.This is the structure of a suboptimum, only can use as a collimation lens.It can not be coupled to laser waveguide as imaging len.In order to make GRIN structure be in optimum state, ducting layer should be placed on the middle of whole layer structure.Shown in Fig. 2 a and Fig. 2 b is traditional GRIN, and this kind of GRIN is that a discrete component can not be integrated on chip, is called as traditional block GRIN.The technology such as the method for making of this GRIN is different from the utility model, general use ion-exchange.
As shown in Figure 1 b be the grin lens of prior art.This grin lens is grown to a thicker layer structure, and in the growth course of this layer structure, the component of material is different with thickness difference.Once whole layer structure growth (or deposition) completes, photoetching and etching are carried out to whole layer structure.
Also there are some shortcomings in same photoetching and the thicker layer structure of etching.Etching thicker layer structure can make the fidelity of technique decline, and the profile of waveguide is deteriorated, and precision reduces, and the roughness at edge strengthens; And need in this technique manufacturing process to carry out on-line monitoring (such as monitoring the relation of refractive index relative position) to material parameter, if parameters precision is inadequate, just can not reach best result.
Summary of the invention
Cannot carry out successively photoetching in order to the grin lens solved in the waveguide assembly of prior art and etching causes fidelity to decline, the profile of waveguide is deteriorated, the technical matters that precision reduces, and the utility model provides a kind of graded index waveguide assembly and preparation method thereof.
Technical solution of the present utility model:
A kind of graded index waveguide assembly, comprise grin lens and covering, its special character is: described grin lens comprises substrate, ducting layer and at least two GRIN layers, the GRIN of the bottom is deposited upon on substrate, described ducting layer is between two GRIN layers of arbitrary neighborhood, described covering is wrapped in outside grin lens, becomes large by the most GRIN layer of top layer or the GRIN layer of the bottom gradually to the refractive index of ducting layer.
Above-mentioned grin lens comprises substrate, ducting layer and GRIN layer, and described GRIN is deposited upon on substrate, and described ducting layer is deposited on GRIN layer, and described covering is wrapped in outside grin lens, and the refractive index of described ducting layer is greater than the refractive index of GRIN layer.
Each GRIN layer comprises at least two GRIN sublayers, and described ducting layer comprises at least two waveguide sublayers.
The refractive index of each GRIN sublayer in each GRIN layer is identical or not identical, and the refractive index of each waveguide sublayer in ducting layer is identical or not identical.
The refractive index of each GRIN sublayer in each GRIN layer becomes large along with the shortening of the spacing with ducting layer gradually.
Length or the width of above-mentioned GRIN layer shorten gradually along with the growth of the spacing with ducting layer.
The material of above-mentioned ducting layer and GRIN layer is one or more combination in silicon oxynitride Silicon Oxynitride, silicon oxide carbide Silicon Oxycarbide, polymer P olymers, the silicon dioxide Doped glasses of doping, the silicon dioxide Spin on Glasses of spin coating and InGaAsP alloy Indium Gallium Arsenide Phosphide alloys.
A preparation method for graded index waveguide component, its special character is: comprise the following steps:
1] position of ducting layer is determined, and preparing substrate; The GRIN layer of the bottom is defined as a GRIN layer, defines successively, and the GRIN layer of most top layer is N GRIN layer, and wherein the GRIN layer distance substrate of the bottom is nearest;
2] refractive index of each GRIN layer is determined according to the position of ducting layer;
The refractive index of ducting layer is the highest, successively becomes large by the most GRIN layer of top layer or the GRIN layer of the bottom gradually to the refractive index of ducting layer;
3] according to the refractive index determined, a GRIN layer of grin lens is prepared:
3.1] prepare: on substrate, carry out at least once semiconductor material deposition, form a GRIN layer;
3.2] photoetching and etching are carried out to a GRIN layer of grin lens, after remove photoresist;
3.3] covering deposition is carried out to a GRIN layer of grin lens; The refractive index of clad material is less than or equal to the minimum refractive index in all GRIN layers;
3.4] covering is polished the upper surface to a GRIN layer;
4] according to the refractive index determined, the 2nd GRIN layer of grin lens is prepared:
4.1] at the top of a GRIN layer, semiconductor material deposition is at least one times carried out;
4.2] photoetching and etching are carried out to the 2nd GRIN layer of grin lens, after remove photoresist;
4.3] covering deposition is carried out to the 2nd GRIN layer of grin lens; The refractive index of clad material is less than or equal to the minimum refractive index in all GRIN layers;
4.4] covering is polished the upper surface to the 2nd GRIN layer;
4] according to the refractive index determined, the 3rd GRIN layer of grin lens is prepared;
The like, until be prepared into the GRIN layer of the most top layer of grin lens.
The GRIN layer that wherein refractive index is maximum is ducting layer.
Above-mentioned substrate is made up of the silicon dioxide layer of silicon chip and thermal oxide silicon dioxide layer or vapour deposition.
Also comprise refractometry step: also will measure the refractive index of this GRIN layer after each GRIN layer completes.
The material of each GRIN layer is one or more combination in silicon oxynitride Silicon Oxynitride, silicon oxide carbide Silicon Oxycarbide, polymer P olymers, the silicon dioxide Doped glasses of doping, the silicon dioxide Spin on Glasses of spin coating and InGaAsP alloy Indium Gallium Arsenide Phosphide alloys;
Prepare the depositional mode of every layer of GRIN layer and the depositional mode of covering: comprise plasma reinforced chemical vapour deposition method (PEVCD), high-density plasma chemical vapor deposition method (HDPCVD), low-pressure chemical vapour deposition technique (LPCVD), sputtering method or spin-coating method.
Above-mentioned photoetching by stepper, contact photoetching machine or, electron-beam direct writing come; Describedly be etching through reactive ion etching or inductively coupled plasma.
Above-mentioned polishing is realized by chemically mechanical polishing (CMP) or corrosion.
The advantage that the utility model has:
1, the utility model grin lens is made by PLC technology, the advantage of PLC technology be can by GRIN layer in grin lens and ducting layer on the same chip integrated.Compared with the grin lens of traditional discrete needs to encapsulate respectively, adopt the grin lens of PLC technology to have single-chip integration, cost is low, the advantage of good reliability.Grin lens is required can be compatible with structure with the platform of the waveguide of the remainder of PLC, and thickness and the refractive index of the optical waveguide of PLC remainder are stable.And grin lens and preparation technology thereof must be compatible with the optical waveguide other parts of PLC.
2, the utility model takes silicon oxynitride (SiON) material, is applicable to the preparation of GRIN layer and PLC waveguide layer simultaneously.SiON is according to the difference combined between element, and refractive index can change (in 1500nm wavelength band) between 1.45 to 2.0.SiON material adopts chemical vapor deposition (CVD) method to grow usually.In growth course, realize different variations in refractive index by the variable concentrations controlling gas, that is, realized the difference change of refractive index by combinations different between SiON element.
3, the utility model carries out refractive index and thickness measure after every one deck GRIN layer completes, if refractive index or thickness do not meet designing requirement after a certain step, can carry out in this step correcting or take indemnifying measure in later step.Every layer of GRIN layer has specific index distribution and thickness.Index distribution can be the change of constant, continuous gradient or distribution gradient change.After having grown, refractive index and thickness can by various mode (as ellipsometry) Accurate Measurements.As refractive index and thickness do not meet designing requirement, wafer (avoiding further time or waste of material) at this moment can be discarded or take corrective action (design increasing corresponding layer or amendment subsequent layer makes up).
4, the utility model discloses the new method of one planar optical waveguide (PLC) fabrication techniques graded index (GRIN) element.The method is different from prior art part and is Hi-Fi technological process, and is conducive to the monitoring in technological process, and flexible design.
5, GRIN layer of the present utility model changes at length direction, in this way front end face is changed over a shape close to curved surface from plane, and the effect of similar lens, carries out the amendment in phase place to incident light.GRIN layer changes at Width: the shape changing the plane of incidence, makes it close to input light spot shape (such as fiber exit face is that circle is just modified as close to circular), can increase coupling efficiency.
Accompanying drawing explanation
Fig. 1 a is the schematic diagram that prior art waveguide assembly realizes coupling fiber;
Fig. 1 b is the refractive index distribution schematic diagram in the Y-axis direction of prior art grin lens;
Fig. 2 a is the side view that traditional grin lens device realizes coupling fiber;
Fig. 2 b is the refractive index distribution schematic diagram in the Y-axis direction of traditional grin lens;
Fig. 3 a is that the utility model single-chip integration grin lens carries out optical fiber to the optical waveguide coupled schematic diagram of PLC;
Fig. 3 b is the refractive index distribution schematic diagram in the Y-axis direction of the utility model grin lens;
Fig. 4 a is the vertical view of Fig. 3 a:
Fig. 4 b to be the refractive index of the utility model grin lens be distribution schematic diagram in the x-direction;
Fig. 5 is that the divergent beams of laser emitting are coupled to the schematic diagram of waveguide by the utility model grin lens.
Fig. 6 is structural representation of the present utility model;
Fig. 7 is a kind of embodiment schematic diagram of the utility model graded index waveguide assembly;
Fig. 8 is the another kind of embodiment schematic diagram of the utility model graded index waveguide assembly;
Fig. 9 is Fig. 8 front view;
Figure 10 the utility model schematic flow sheet.Wherein Reference numeral is: 1-optical fiber, B-ducting layer, G, G1, G2, G3, G4, G5, G6-GRIN layer, 21-substrate, 22-waveguide sublayer, 23-GRIN sublayer, 3-covering, 4-laser instrument.
Embodiment
The utility model difference with the prior art and advantage is set forth below by by several special example and description:
Embodiment 1:
Method of the present utility model successively carries out growth and the etching of GRIN element.Embodiment is as shown in Figure 6 the GRIN element of Multi layer Growth.In figure, G1, G2, G3, B, G4, G5, G6 represent different layers, and T1, T2, T3, T4, T5, T6 represent the thickness of every layer respectively.Grin lens is formed by seven layers, also can be made up of other number of plies.The preparation section of every layer is successively deposition, photoetching, etches, deposits covering and the top of covering is polished the top to GRIN layer.Succeeding layer will deposit on front one deck basis, photoetching, and etching, then carries out covering deposition according to demand and polish.Each GRIN layer refractive index in grin lens can be constant, also can be changed by certain rule.Pile up final formation GRIN element layer by layer.The method of this layer-by-layer preparation can well control the refractive index of every layer and etching quality.After every one deck completes growth, can be measured more accurately its refractive index and thickness by non-online mode.Such as, when finding that the refractive index of certain certain layer departs from expectation value, can stop in time or in subsequent layer, make up this deviation, this will save material and time greatly, and make design more flexible.Another advantage of this method is, one of GRIN layer can as light waveguide-layer, and the method for layer-by-layer preparation allows to enter ducting layer in GRIN layer interpolation, and need not uppermost or bottom at GRIN layer.Ducting layer self can be graded index also can be homogeneous refractive index distribution.Each layer of Fig. 7 grin lens can be made up of different sublayers.The difference of sublayer and main stor(e)y is that it does not carry out photoetching and etching separately, and sublayer can have identical refractive index or graded index profile.A series of sublayer forms a main stor(e)y, and each main stor(e)y carries out photoetching and etching.The segmentation of further refractive index can be introduced in sublayer.Such as, a main stor(e)y can be made up of some sublayers of refractive index homogeneity, also can be made up of the sublayer that refractive index is different, and the sublayer that refractive index is different makes that the refractive index of main stor(e)y is more effective realizes gradient.Successively another advantage of preparation method is, every one deck deposition, photoetching, etching, covering deposition and to polish can be independently.As the input end of the grin lens in Fig. 8, figure, every layer starts from different reference positions, and this may be used for adjustment phase place or for other objects.Such as, reference position difference can reach the effect increasing another lens on the basis of grin lens.In this way front end face is changed over a shape close to curved surface from plane, the effect of similar lens, carries out the amendment in phase place to incident light.
Shown in Fig. 9, in this case, the transverse width of each GRIN layer adjusts to some extent.Optimize the shape of input pattern, better to adapt to different input field distributions.The reference position (shown in Fig. 8) of GRIN layer, and GRIN width (shown in Fig. 9) can be optimized simultaneously.In whole GRIN structure, the width of each layer also can change independently, and this can not realize in prepared by traditional GRIN.
Preparation example:
Process flow diagram is in Fig. 10 the typical method successively preparing GRIN element:
1, substrate is made up of silicon chip and thermal oxide silicon dioxide layer (also can be the silicon dioxide layer of vapour deposition).
2, the ground floor of grin lens can be taked a variety of method to realize: as plasma reinforced chemical vapour deposition method (PEVCD), high-density plasma chemical vapor deposition method (HDPCVD), low-pressure chemical vapour deposition technique (LPCVD), sputtering method or spin-coating method.This layer (G1) has specific index distribution and thickness.Index distribution can be the change of constant, continuous gradient or distribution gradient change.After having grown, refractive index and thickness can by various mode (as ellipsometry) Accurate Measurements.As refractive index and thickness do not meet designing requirement, wafer (avoiding further time or waste of material) at this moment can be discarded or take corrective action (design increasing corresponding layer or amendment subsequent layer makes up).The material of ducting layer and GRIN layer is one or more combination in silicon oxynitride Silicon Oxynitride, silicon oxide carbide Silicon Oxycarbide, polymer P olymers, the silicon dioxide Doped glasses of doping, the silicon dioxide Spin on Glasses of spin coating and InGaAsP alloy Indium Gallium Arsenide Phosphide alloys.
3, photoetching and etching are carried out to the ground floor of grin lens.Photoetching can pass through stepper, and contact photoetching machine or electron-beam direct writing have come.Etching can pass through reactive ion etching, and the methods such as inductively coupled plasma have been come.
4, covering deposition is carried out to the ground floor of GRIN element.The refractive index of covering is lower than the refractive index of all layers.The deposition of covering can be completed by a variety of method, as plasma reinforced chemical vapour deposition method (PEVCD), high-density plasma chemical vapor deposition method (HDPCVD), low-pressure chemical vapour deposition technique (LPCVD), sputtering method or spin-coating method etc.
5, covering is by the upper surface polished to GRIN.Polishing can by CMP (chemically mechanical polishing), or corrosion realizes.Covering has quantity to remain in the top of GRIN layer, by specifically needing to carry out for design.
6, grin lens second is deposited upon the top of existing GRIN layer.The second layer is by being similar to the method deposition of a GRIN layer.2nd GRIN layer has its specific the second index distribution and thickness.
7, second GRIN layer carries out photoetching and etching by the method being similar to first GRIN layer.The pattern of second GRIN layer may be different from first GRIN layer.
8, around the 2nd GRIN layer, deposit covering, intermediate processing is similar to a GRIN layer covering deposition.
9, this covering can be planarized to the upper surface of the 2nd GRIN layer.The refractive index of described second covering can be the refractive index being similar to the first covering, and also can be different, this depends on design.The method polished is similar to the method polishing use for the first covering.
Follow-up GRIN layer deposition, chemical etching, covering deposits, and polishes with front two-layer similar, and step is carried out as shown in Figure 10.After each step above-mentioned, need refractive index accurately to measure.If refractive index or thickness do not meet designing requirement after a certain step, can carry out in this step correcting or take indemnifying measure in later step.
This preparation method can adopt different materials, deposition process, chemical etching method, and covering preparation method and grinding method all belong to the protection category of this patent.
Claims (7)
1. a graded index waveguide assembly, comprise grin lens and covering, it is characterized in that: described grin lens comprises substrate, ducting layer and at least two GRIN layers, the GRIN of the bottom is deposited upon on substrate, described ducting layer is between two GRIN layers of arbitrary neighborhood, described covering is wrapped in outside grin lens, becomes large by the most GRIN layer of top layer or the GRIN layer of the bottom gradually to the refractive index of ducting layer.
2. a graded index waveguide assembly, comprise grin lens and covering, it is characterized in that: described grin lens comprises substrate, ducting layer and GRIN layer, described GRIN is deposited upon on substrate, described ducting layer is deposited on GRIN layer, described covering is wrapped in outside grin lens, and the refractive index of described ducting layer is greater than the refractive index of GRIN layer.
3. graded index waveguide assembly according to claim 1 and 2, is characterized in that: each GRIN layer comprises at least two GRIN sublayers, and described ducting layer comprises at least two waveguide sublayers.
4. graded index waveguide assembly according to claim 3, is characterized in that: the refractive index of each GRIN sublayer in each GRIN layer is identical or not identical, and the refractive index of each waveguide sublayer in ducting layer is identical or not identical.
5. graded index waveguide assembly according to claim 4, is characterized in that: the refractive index of each GRIN sublayer in each GRIN layer becomes large along with the shortening of the spacing with ducting layer gradually.
6. graded index waveguide assembly according to claim 5, is characterized in that: length or the width of described GRIN layer shorten gradually along with the growth of the spacing with ducting layer.
7. according to arbitrary described graded index waveguide assembly of claim 1-6, it is characterized in that: the material of described ducting layer and GRIN layer is a kind of in silicon oxynitride Silicon Oxynitride, silicon oxide carbide Silicon Oxycarbide, polymer P olymers, the silicon dioxide Doped glasses of doping, the silicon dioxide Spin on Glasses of spin coating and InGaAsP alloy Indium Gallium Arsenide Phosphide alloys.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104678501A (en) * | 2015-03-06 | 2015-06-03 | 西安奇芯光电科技有限公司 | Gradient refractive index waveguide device and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104678501A (en) * | 2015-03-06 | 2015-06-03 | 西安奇芯光电科技有限公司 | Gradient refractive index waveguide device and preparation method thereof |
| CN104678501B (en) * | 2015-03-06 | 2017-03-22 | 西安奇芯光电科技有限公司 | Gradient refractive index waveguide device and preparation method thereof |
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Effective date of registration: 20230605 Address after: 2-4, Building 3, No. 16 Shigui Avenue, Jieshi Town, Banan District, Chongqing, 400000 Patentee after: Advanced Optoelectronics (Chongqing) Co.,Ltd. Address before: 710304 Building 7, Technology Enterprise Accelerator Park, No. 2 West Qinling Avenue, Caotang Science and Technology Industry Base, High tech Zone, Xi'an City, Shaanxi Province Patentee before: QXP TECHNOLOGIES Inc. |
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