CN204615769U - A kind of L-band single channel bias voltage low noise refrigeration amplifier - Google Patents
A kind of L-band single channel bias voltage low noise refrigeration amplifier Download PDFInfo
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Abstract
The utility model discloses a kind of L-band single channel bias voltage low noise refrigeration amplifier, this amplifier comprises input matching circuit, DC bias circuit, signal amplification circuit and output matching circuit; The output of input matching circuit is connected with the input of DC bias circuit, signal amplification circuit input; The output of signal amplification circuit output and DC bias circuit, the input of output matching circuit link together and form described amplifier; The L-band refrigeration low noise amplifier of the application, working band is 1.3-1.8GHz, it can long-time stable work under the ultra low temperature of 10-20K, low temperature environment greatly reduces the Resistance Thermal Noise of each resistance element of LNA and the grid drain junction noise of transistor, thus the equivalent noise temperature of LNA is reduced to the level of about 9K.Transistor is selected and DC bias circuit design makes this refrigeration low noise amplifier possess high dynamic range, and it exports three rank and blocks power up to 25.5dBm, exports 1dB compression horsepower up to 15dBm.
Description
Technical Field
The utility model relates to an amplifier field for the astronomical receiver especially relates to a L wave band single pass high linearity under bias low noise refrigeration amplifier for astronomical receiver.
Background
A microwave Low Noise Amplifier (LNA) is a very critical component in an astronomical receiver, and its performance directly determines the sensitivity of the system. Meanwhile, the material is also a very important device in the fields of low-temperature physical research and satellite communication. At present, various microwave device manufacturers mainly provide microwave low-noise amplifiers working at normal temperature, wherein the noise temperature of the L-band low-noise amplifier with better noise performance at normal temperature is basically higher than 50K, and the requirement of an astronomical receiver on sensitivity cannot be met. At present, all L-band amplifiers used by astronomical telescopes in all countries in the world are refrigeration low-noise amplifiers, namely, the amplifiers are refrigerated to the ultralow temperature of 15-20K by adopting a refrigeration Dewar, and the low-temperature environment greatly reduces the resistance thermal noise of resistive elements of low-noise amplifier and the gate-drain noise of transistors, thereby reducing the equivalent noise temperature of low-noise amplifier to below 10K. These refrigeration amplifiers were almost exclusively developed by four research institutions: the california academy of sciences (Caltech), australian astronomical benches (ATNF), british astronomical benches (JBCA) and american national astronomical benches (NRAO). Refrigeration amplifiers developed by various research institutes were characterized, the most representative of which was the sander. The former adopts heterojunction bipolar germanium-silicon Transistor (HBT SiGe Transistor) to develop refrigeration low-noise amplifier, the working frequency band is 1-3GHz, and the in-band gain is 30-32 dB. The noise temperature is about 70-80K at normal temperature and about 5-8K at 20K. The single-path direct current power supply is adopted, and the power supply mode is simple. However, the amplifier has poor linearity, and the output third-order cutoff power (OIP 3) is 15.6dBm, and the output 1dB gain compression power (P1) is 0 dBm. Poor linearity can have some impact on its use in high emi environments. The working frequency band of the L-band low-noise refrigeration amplifier developed by the Australian astronomical stage is 0.95-1.45GHz, and the in-band gain is 30-32 dB. The noise temperature is 40K at room temperature and 4.5-5.5K at 15K. The output third-order cut-off power is 18dBm, and the output 1dB gain compression power is 7 dBm. The amplifier has good noise performance and linearity performance, but because the amplifier is manufactured by using a Depletion Mode Transistor (Depletion Mode Transistor), the grid of the Transistor needs negative bias voltage, the whole amplifier needs 2 paths of positive bias voltage and 2 paths of negative bias voltage for power supply, the direct current power supply Mode is complex, and 5 direct current wires are needed to enter a receiver Dewar in practical use by adding a ground wire. In particular, for a multi-beam receiver, such as a 19-beam receiver of a 500-meter bore spherical radio telescope (FAST project) under construction in the guizhou, each beam requires 2 refrigeration amplifiers, so that up to 190 direct current lines are required to be introduced into the refrigeration dewar, and the 190 direct current lines connected to the temperature of 15K in the dewar from the external 300K temperature can continuously heat the cold head of 15K in the refrigeration dewar, thereby increasing the refrigeration capacity and complexity of the refrigeration system. Meanwhile, the external power supply module is also specially designed so as to provide 4 paths of positive and negative bias voltages for each amplifier.
At present, in order to meet the requirements of low noise, high gain, low reflection loss, wide bandwidth and other performance in various aspects, most of low-noise refrigeration amplifiers adopt a multi-path power supply mode, and even 7 direct current power supply circuits of L-band refrigeration amplifiers developed by British astronomical information broadcasting (JBCA) are provided. Also for reasons of balanced design, the linearity of each amplifier is not very good, especially at the present day when the electromagnetic interference of each astronomical telescope station is increasing, in order to suppress the electromagnetic interference, it is becoming more and more common to add a refrigeration ultra-low loss filter (such as a high temperature superconducting filter) at the front end of the receiver refrigeration amplifier, which not only increases the complexity and the cost of the receiver system, but also increases the noise temperature of the system inevitably because the filter is at the front end of the first stage amplifier of the system.
Therefore, how to solve the above problems becomes a technical problem that needs to be solved urgently by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
To the problem that exists among the background art, the utility model aims to provide a L wave band single pass bias voltage low noise refrigeration amplifier, unique microwave is adopted in this application, mechanical design and unique welding dress technology design make L wave band single pass bias voltage refrigeration low noise amplifier, operating band 1.3-1.8GHz, this amplifier can be at long-time stable work under 10-20K's ultralow temperature, low temperature environment has reduced the low noise widely and has put the resistance thermal noise of each resistive element and the grid drain utmost point knot noise of transistor, thereby reduce the equivalent noise temperature that the low noise was put to the level about 9K. The optimized transistor selection, the accurate direct current characteristic test and the unique direct current bias circuit design enable the refrigeration low-noise amplifier to have an extremely high dynamic range, the output third-order cutoff power of the refrigeration low-noise amplifier is up to 25.5dBm, and the output 1dB compression power of the refrigeration low-noise amplifier is up to 15 dBm.
The purpose of the utility model is realized through the following technical scheme:
an L-band single-path bias low-noise refrigeration amplifier comprises an input matching circuit, a direct-current bias circuit, a signal amplification circuit and an output matching circuit; wherein,
the output end of the input matching circuit is connected with the input end of the direct current bias circuit and the input end of the signal amplification circuit; the output end of the signal amplification circuit is connected with the output end of the direct current bias circuit and the input end of the output matching circuit to form the amplifier.
Further, the input matching circuit comprises a microstrip transmission line (T1), a first capacitor (C1), a microstrip transmission line (T2), a first inductor (L1) and a parallel microstrip stub (T4), wherein an input signal is connected to one end of the microstrip transmission line (T1), the other end of the microstrip transmission line is connected to one end of the first capacitor (C1), the other end of the first capacitor (C1) is connected to one end of the microstrip transmission line (T2), the other end of the microstrip transmission line (T2) is connected to one end of the first inductor (L1), the other end of the first inductor (L1) is connected to one end of the parallel microstrip stub (T4), and the other end of the parallel microstrip stub (T4) is connected to the input end of the dc bias circuit and the input end of the signal amplifying circuit.
Further, the signal amplification circuit includes a first stage transistor (G1), an interelectrode capacitance (C2), and a second stage transistor (G2); the grid electrode of the first-stage transistor (G1) is the input end of the signal amplification circuit, the drain electrode of the first-stage transistor (G1) is connected with one end of the interelectrode capacitor (C2), the other end of the interelectrode capacitor (C2) is connected with the grid electrode of the second-stage transistor (G2), and the drain electrode of the second-stage transistor (G2) is the output end of the signal amplification circuit.
Further, the DC bias circuit comprises a microstrip transmission line (T3), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a seventh resistor (R7), an eighth resistor (R8), a ninth resistor (R9), a tenth resistor (R10), a microstrip transmission line (T10), a third capacitor (C3), a fourth capacitor (C4), a sixth capacitor (C6), a seventh capacitor (C7) and an eighth capacitor (C8), one end of the microstrip transmission line (T3) is connected with the input end of the signal amplifying circuit, the other end of the microstrip transmission line (T3) is connected with one end of the first resistor (R1), the other end of the first resistor (R1) is respectively connected with one end of the second resistor (R2) and one end of the fourth capacitor (C4), and the other end of the fourth capacitor (C4) is grounded; the other end of the second resistor (R2) is respectively connected with one end of the third resistor (R3) and one end of the fourth resistor (R4), the other end of the third resistor (R3) is grounded, the other end of the fourth resistor (R4) is respectively connected with the signal amplification circuit through a microstrip line (T5), one end of the fifth resistor (R5), one end of the sixth capacitor (C6) and a direct current power supply interface (DC port) through a microstrip line (T11), the other end of the fifth resistor (R5) is grounded, and the other end of the sixth capacitor (C6) is grounded; one end of the microstrip transmission line (T10) is connected with the signal amplifying circuit, the other end of the microstrip transmission line (T10) is connected with one end of the sixth resistor (R6), the other end of the sixth resistor (R6) is respectively connected with one end of the third capacitor (C3) and one end of the seventh resistor (R7), the other end of the third capacitor (C3) is grounded, the other end of the seventh resistor (R7) is respectively connected with one end of the eighth resistor (R8) and one end of the ninth resistor (R9), the other end of the eighth resistor (R8) is grounded, the other end of the ninth resistor (R9) is respectively connected with the output end of the signal amplifying circuit through a microstrip line (T6), the DC power interface (DC port) through a microstrip line (T12), one end of the tenth resistor (R10), one end of the seventh capacitor (C7) and the other end of the tenth resistor (R10) are grounded, the other end of the seventh capacitor (C7) is grounded; one end of the eighth capacitor (C8) is grounded, and the other end is connected with the direct current power supply interface (DC port).
Further, the first stage transistor (G1) and the second stage transistor (G2) are both enhancement type high electron mobility field effect transistors (ATF 54143).
Further, the circuit substrate of the amplifier is an ultra-low loss PTFE ceramic circuit board R03003.
The utility model discloses following positive technological effect has:
the L-band single-path bias refrigeration low-noise amplifier is designed and manufactured by adopting unique microwave and mechanical design and a unique welding process, the working frequency band is 1.3-1.8GHz, the amplifier can stably work for a long time at the ultralow temperature of 10-20K, and the low-temperature environment greatly reduces the resistance thermal noise of resistive elements of the low-noise amplifier and the gate-drain junction noise of a transistor, so that the equivalent noise temperature of the low-noise amplifier is reduced to the level of about 9K. The optimized transistor selection, the accurate direct current characteristic test and the unique direct current bias circuit design enable the refrigeration low-noise amplifier to have an extremely high dynamic range, the output third-order cutoff power of the refrigeration low-noise amplifier is up to 25.5dBm, and the output 1dB compression power of the refrigeration low-noise amplifier is up to 15 dBm.
Drawings
Fig. 1 is a schematic circuit diagram of the present invention;
fig. 2 is a dc characteristic curve of the transistor ATF54143 of the present invention at a gate-source voltage step of 0.1V;
FIG. 3 is a graph of the measurement result of S parameter of the amplifier of the present invention in the frequency range of 0.05-4 GHz;
FIG. 4 is a graph of the noise temperature and gain measurement result of the amplifier of the present invention at normal temperature (300K);
fig. 5 is a graph of the noise temperature and gain measurement results of the amplifier of the present invention at a temperature of 20K;
fig. 6 is a graph showing the correspondence between the gain and the output power of the amplifier and the input power.
Detailed Description
The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. The present invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
For ease of description, spatially relative terms, such as "upper," "lower," "left," "right," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatial terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "lower" can encompass both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
As shown in fig. 1, an L-band single-path bias low-noise refrigeration amplifier includes an input matching circuit, a dc bias circuit, a signal amplifying circuit, and an output matching circuit; the output end of the input matching circuit is connected with the input end of the direct current bias circuit and the input end of the signal amplification circuit; the output end of the signal amplification circuit is connected with the output end of the direct current bias circuit and the input end of the output matching circuit to form the amplifier.
The input matching circuit comprises a microstrip transmission line (T1), a first capacitor (C1), a microstrip transmission line (T2), a first inductor (L1) and a parallel microstrip stub (T4), wherein an input signal is connected to one end of the microstrip transmission line (T1), one end of the first capacitor (C1) is connected to the other end of the microstrip transmission line, one end of the microstrip transmission line (T2) is connected to the other end of the first capacitor (C1), one end of the first inductor (L1) is connected to the other end of the microstrip transmission line (T2), one end of the parallel microstrip stub (T4) is connected to the other end of the first inductor (L1), and the other end of the parallel microstrip stub (T4) is connected with an input end of a direct current bias circuit and an input end of a signal amplification circuit.
The signal amplification circuit comprises a first-stage transistor (G1), an interelectrode capacitor (C2) and a second-stage transistor (G2); the gate of the first-stage transistor (G1) is the input end of the signal amplifying circuit, the drain of the first-stage transistor (G1) is connected with one end of the interelectrode capacitor (C2), the other end of the interelectrode capacitor (C2) is connected with the gate of the second-stage transistor (G2), and the drain of the second-stage transistor (G2) is the output end of the signal amplifying circuit.
The direct current bias circuit comprises a microstrip transmission line (T3), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a seventh resistor (R7), an eighth resistor (R8), a ninth resistor (R9), a tenth resistor (R10), a microstrip transmission line (T10), a third capacitor (C3), a fourth capacitor (C4), a sixth capacitor (C6), a seventh capacitor (C7) and an eighth capacitor (C8), one end of a microstrip transmission line (T3) is connected with the input end of the signal amplification circuit (namely the grid of the first-stage transistor G1), the other end of the microstrip transmission line (T3) is connected with one end of a first resistor (R1), the other end of the first resistor (R1) is respectively connected with one end of a second resistor (R2) and one end of a fourth capacitor (C4), and the other end of the fourth capacitor (C4) is grounded; the other end of the second resistor (R2) is respectively connected with one end of a third resistor (R3) and one end of a fourth resistor (R4), the other end of the third resistor (R3) is grounded, the other end of the fourth resistor (R4) is respectively connected with a signal amplification circuit (namely the drain electrode of the first-stage transistor G1) through a microstrip line (T5), one end of a fifth resistor (R5) is connected with one end of a sixth capacitor (C6), a direct-current power supply interface (DC port) is connected through a microstrip line (T11), the other end of the fifth resistor (R5) is grounded, and the other end of the sixth capacitor (C6) is grounded; one end of a microstrip transmission line (T10) is connected with a signal amplifying circuit (namely the grid of a second-stage transistor G2), the other end of the microstrip transmission line (T10) is connected with one end of a sixth resistor (R6), the other end of the sixth resistor (R6) is respectively connected with one end of a third capacitor (C3) and one end of a seventh resistor (R7), the other end of the third capacitor (C3) is grounded, the other end of the seventh resistor (R7) is respectively connected with one end of an eighth resistor (R8) and one end of a ninth resistor (R9), the other end of the eighth resistor (R8) is grounded, the other end of the ninth resistor (R9) is respectively connected with the output end of the signal amplifying circuit through a microstrip line (T6) and with a direct current power supply interface (DC port) through a microstrip line (T12), one end of a tenth resistor (R10) is connected with one end of a seventh capacitor (C7), the other end of the tenth resistor (R10) is grounded, and the other end of the seventh capacitor (C7) is grounded; one end of the eighth capacitor (C8) is grounded, and the other end is connected with a direct current power supply interface (DC port).
Preferably, the present patent designs a refrigeration low noise amplifier using a two-stage enhanced high electron mobility (Enhancement Mode pHEMT) field effect transistor ATF54143, which has low noise, high linearity, and high gain characteristics. The noise figure of ATF54143 at room temperature is only 0.3dB (900 MHz) and 0.4dB (2 GHz) at a drain-source bias of 3V. At the same bias voltage, its 1dB compression power is close to 20dBm, which is higher than most of the indexes applied to transistors with low noise amplification of astronomical receivers, such as FHX04X by Fujitsu and BFU725 by NXP. The higher linearity of the transistor under proper bias makes it possible to have higher linearity of the low noise amplifier made therefrom. Although typical S-parameters and dc-characteristics of a transistor can be obtained from its manufacturer' S data tables and simulation models, accurate testing of the transistor to be used in the design and manufacture is necessary to eliminate errors between actual used transistors and typical measured values and between different batches of transistors. In order to reduce the noise contribution of the input matching network, the ultra-low loss microstrip transmission line and the parallel stub replace discrete elements in the traditional design to construct the input matching circuit with low noise amplification. In addition, software simulation design of low noise amplifier found that 1nH inductance added in the input transmission line would be very helpful for good input matching.
As shown in fig. 2, is increasedThe linearity of the amplifier is firstly to select a transistor with high linearity, and simultaneously, the measurement of the direct current characteristic of the transistor is necessary. The DC characteristic curve of the transistor is tested by using two high-precision stepping voltage sources U3606A, and the test result is shown in FIG. 2. As seen in FIG. 2, the gate voltage is positive because the transistor belongs to the enhancement mode. To obtain the required 3V drain voltage VdsAnd 40mA drain current IdsThe resistance R5 can be represented by the formula R5= (V)D-Vds)/(Ids+IB) Is calculated where VDIs an external supply voltage of 5V, IBIs the current flowing through the R3 and R4 resistive divider networks. Selection of IB2mA, thereby establishing R5 as 47 ohm; r3 and R4 pass R3= V, respectivelygs/IBAnd R4= (V)ds-Vgs) R3/VgsIs calculated to obtain wherein VgsTo gate the source voltage, it can be read out through fig. 2. Thus, R3 can be determined to be 270 ohms and R4 is 1230 ohms. The first-stage bias circuit is mainly designed to realize low noise of the circuit; the bias voltage of the second stage is designed to obtain higher linearity, so that the bias voltage of the second stage circuit is adjusted to VdsIs 4V, IdsIs 50 mA. Measurements show that the 1dB compression power of the circuit of the second stage transistor of the amplifier under the bias voltage is higher than that of the circuit at VdsIs 3V and IdsA 1dB compression power increase of 2dB at 40mA bias. The power supply network of the two-stage transistor is connected by a microstrip line, so that a path of 3.5V direct current voltage can be simultaneously supplied to the two-stage transistor for power supply. At the gates of the two transistors, the direct current bias circuit adopts two sections of 1/4 wavelength microstrip lines (T3 and T10) (for the central frequency of 1.6 GHz) as radio frequency blockers, and circuit simulation analysis shows that the microstrip line radio frequency blockers can better expand the bandwidth compared with the traditional low-loss chip inductor.
The traditional low noise amplifier realizes the balance of the in-band gain of the amplifier mainly through a negative feedback circuit between a drain electrode and a grid electrode, and the gain flatness performance of the amplifier of the patent is realized mainly through an interpolar capacitor C2 of 1pF and a parallel microstrip stub at an output end (see figure 1). The design greatly simplifies the transmission path of radio frequency signals, thereby improving the stability and noise performance of the circuit. At 1.6GHz, the gains of the first and second stage transistors at their respective bias voltages are about 16.5dB and 18dB, respectively, so that gains of greater than 30dB are achievable for the entire circuit, with the signal losses due to bias circuit shunting and signal reflection removed.
The amplifier input matching circuit is realized mainly by a microstrip transmission line and a parallel stub, so that
The circuit board is required to have ultra-low loss characteristics. In addition, the amplifier will operate at ultra low temperatures of 20K, and the mechanical and microwave stability of the circuit board at low temperatures is also very important. Based on the two considerations, the ultra-low loss PTFE ceramic circuit board RO3003 manufactured by Rogers is selected as the circuit substrate of the amplifier, the thickness is 1.524mm, the loss factor is only 0.0013, and the temperature stability is good. The gold film with the thickness of 35um is deposited on the surface of the copper layer of the circuit board, so that the components can be welded more firmly, and the welding spot is prevented from cracking in the ultralow temperature environment. The experiment shows that the Kingnod alloy solder SN63 has good stability at low temperature. The 2 transistors are soldered to circuit board pads. Each source of the transistor is grounded through 6 through holes, the diameter of each through hole is 0.37mm, and through simulation design, the parasitic inductance of the through holes and the lead inductance between the through holes and the source pins, which is 0.5mm long, enable the circuit to be in an absolute stable condition and be satisfied. In order to ensure the uniform distribution of the surface circuits of the circuit, the lower surface of the circuit board is uniformly welded with the brass box body. Another purpose of soldering is to ensure a good thermal mechanical connection of the circuit board and the box, thereby ensuring that the amplifier circuit part can be cooled well. 2 low-loss four-hole flange SMA female connectors are used as input and output connectors of the amplifier, and the DC power supply terminal also adopts an SMA connector, but a 100pF capacitor (C8) is required to be decoupled inside the circuit.
As shown in FIG. 3, the S parameter of the amplifier was measured using a suitable amount of network analyzer in the range of 0.05-4 GHz. Within a designed frequency band of 1.3-1.8GHz, the gain is greater than 30dB, and the dual-port reflection damage is greater than 10 dB; the gain flatness is better than +/-0.75 dB. It can be seen from fig. 3 that the usable band can be extended to 2.3GHz if the requirements for S11 at 2GHz are not very strict.
As shown in FIG. 4, the noise temperature of the amplifier at normal temperature is directly measured by a noise coefficient tester (Agilent N8974A), and the test result is shown in FIG. 4. in the range of 1.51-1.69GHz, the noise temperature is lower than 50K, wherein the minimum noise temperature appears at 1.6GHz, and the size is 46K; in the range of 1.35-1.9GHz, the noise temperature is lower than 60K; in the range of 1.2-1.35GHz, the noise temperature is lower than 85K.
As shown in figure 5, the noise temperature of the amplifier at 20K ambient temperature is measured by a refrigeration attenuator test Dewar method, the amplifier to be tested is fixed on a 20K cold plate in the refrigeration Dewar to keep good thermal connection, a 20dB attenuator is installed in front of the amplifier to be tested, the attenuator is also cooled to 20K temperature, the attenuator is used for reducing the error of the test system, the noise temperature of the Y factor method is measured by using a noise source at the input end of the refrigeration Dewar and a noise temperature tester at the output end of the refrigeration Dewar, the calibrated system measurement error is within 1K, and the test result shows that the noise temperature in the pass band (1.3-1.8 GHz) of the amplifier is about 9K at 20K temperature, the gain in the band is higher than 30dB, and the gain flatness is better than +/-0.75 dB.
As shown in fig. 6, the present application uses two methods to measure the large signal performance of an amplifier. In the first method, power signals of 1.5GHz, 1.6GHz and the like are simultaneously injected into the input end of the amplifier, the signal power needs to be reasonably selected, the linear work of the amplifier is ensured, and meanwhile, the power of second-order and third-order output products is higher than the noise floor of the test spectrometer. At the output of the amplifier, the power of the second-order product at 3.1GHz and the third-order product at 1.7GHz are respectively measured, and in addition, the power of the fundamental frequency signal is also measured. Based on the above measurements, the second and third order cutoff powers (referenced to the amplifier output) of the amplifier can be calculated to be 34dBm and 25.5dBm, respectively.
The second test method is to test the 1dB gain compression power of the amplifier by using the power scan function of the network analyzer, the power range of the input scan signal is-35 dBm to 0dBm, the curve of the measured gain and output power as the input power is shown in fig. 6, and it can be seen that the 1dB gain compression power referenced to the output port of the amplifier is 15 dBm. The difference between the measured third-order cut-off power and the 1dB gain compression power of the amplifier is 10.5dBm, which is basically consistent with the conclusion of theoretical calculation. The above tests on the large signal performance of the amplifier show that the amplifier has very excellent linearity performance, which is very important for low noise astronomical receiver applications, especially those operating in very harsh electromagnetic environments. This is mainly due to the choice of high linearity transistors and the design of reasonable transistor biasing circuits.
In summary, the L-band refrigeration low-noise amplifier is designed and manufactured by adopting unique microwave, mechanical design and unique welding process, the working frequency band is 1.3-1.8GHz, and the noise temperature of the amplifier at 20K environment temperature is about 9K. The optimized transistor selection, the accurate direct current characteristic test and the unique direct current bias circuit design enable the refrigeration low-noise amplifier to have an extremely high dynamic range, the output third-order cutoff power of the refrigeration low-noise amplifier is up to 25.5dBm, and the output 1dB gain compression power is up to 15 dBm. In addition, the low-noise refrigeration amplifier only needs one path of direct current voltage for driving, and the traditional low-noise refrigeration amplifier at least needs four paths of power supply voltages. The amplifier gain is higher than 30dB, and the in-band gain flatness is better than +/-0.75 dB. The high linearity and the single-path bias voltage power supply characteristics of the amplifier enable the refrigeration low-noise amplifier to have wide application prospects in the fields of astronomical receivers, low-temperature physics and satellite communication.
The above description is only for the purpose of illustration, and it should be understood that the present invention is not limited to the above embodiments, and various modifications conforming to the spirit of the present invention are within the scope of the present invention.
Claims (6)
1. An L-band single-path bias low-noise refrigeration amplifier is characterized in that the amplifier comprises an input matching circuit, a direct-current bias circuit, a signal amplification circuit and an output matching circuit; wherein,
the output end of the input matching circuit is connected with the input end of the direct current bias circuit and the input end of the signal amplification circuit; the output end of the signal amplification circuit is connected with the output end of the direct current bias circuit and the input end of the output matching circuit to form the amplifier.
2. The amplifier of claim 1, wherein the input matching circuit comprises a microstrip transmission line (T1), a first capacitor (C1), a microstrip transmission line (T2), a first inductor (L1), and a parallel microstrip stub (T4), wherein one end of the microstrip transmission line (T1) is connected to an input signal, and the other end is connected to one end of the first capacitor (C1), the other end of the first capacitor (C1) is connected to one end of the microstrip transmission line (T2), the other end of the microstrip transmission line (T2) is connected to one end of the first inductor (L1), the other end of the first inductor (L1) is connected to one end of the parallel microstrip stub (T4), and the other end of the parallel microstrip stub (T4) is connected to the input terminal of the dc bias circuit and the input terminal of the signal amplification circuit.
3. The amplifier of claim 1, wherein the signal amplification circuit comprises a first stage transistor (G1), an interelectrode capacitance (C2), and a second stage transistor (G2); the grid electrode of the first-stage transistor (G1) is the input end of the signal amplification circuit, the drain electrode of the first-stage transistor (G1) is connected with one end of the interelectrode capacitor (C2), the other end of the interelectrode capacitor (C2) is connected with the grid electrode of the second-stage transistor (G2), and the drain electrode of the second-stage transistor (G2) is the output end of the signal amplification circuit.
4. The amplifier of claim 1, wherein the DC bias circuit comprises a microstrip transmission line (T3), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a seventh resistor (R7), an eighth resistor (R8), a ninth resistor (R9), a tenth resistor (R10), a microstrip transmission line (T10), a third capacitor (C3), a fourth capacitor (C4), a sixth capacitor (C6), a seventh capacitor (C7), and an eighth capacitor (C8), one end of the microstrip transmission line (T3) is connected to the input terminal of the signal amplification circuit, the other end of the microstrip transmission line (T3) is connected to one end of the first resistor (R1), and the other end of the first resistor (R1) is connected to one end of the second resistor (R2) and one end of the fourth capacitor (C4) respectively, the other end of the fourth capacitor (C4) is grounded; the other end of the second resistor (R2) is respectively connected with one end of the third resistor (R3) and one end of the fourth resistor (R4), the other end of the third resistor (R3) is grounded, the other end of the fourth resistor (R4) is respectively connected with the signal amplification circuit through a microstrip line (T5), one end of the fifth resistor (R5), one end of the sixth capacitor (C6) and a direct current power supply interface (DC port) through a microstrip line (T11), the other end of the fifth resistor (R5) is grounded, and the other end of the sixth capacitor (C6) is grounded; one end of the microstrip transmission line (T10) is connected with the signal amplifying circuit, the other end of the microstrip transmission line (T10) is connected with one end of the sixth resistor (R6), the other end of the sixth resistor (R6) is respectively connected with one end of the third capacitor (C3) and one end of the seventh resistor (R7), the other end of the third capacitor (C3) is grounded, the other end of the seventh resistor (R7) is respectively connected with one end of the eighth resistor (R8) and one end of the ninth resistor (R9), the other end of the eighth resistor (R8) is grounded, the other end of the ninth resistor (R9) is respectively connected with the output end of the signal amplifying circuit through a microstrip line (T6), the DC power interface (DC port) through a microstrip line (T12), one end of the tenth resistor (R10), one end of the seventh capacitor (C7) and the other end of the tenth resistor (R10) are grounded, the other end of the seventh capacitor (C7) is grounded; one end of the eighth capacitor (C8) is grounded, and the other end is connected with the direct current power supply interface (DC port).
5. The amplifier of claim 3, wherein the first stage transistor (G1) and the second stage transistor (G2) are both enhancement mode high electron mobility field effect transistors (ATF 54143).
6. The amplifier of claim 1, wherein the circuit substrate of the amplifier is an ultra low loss PTFE ceramic circuit board R03003.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104852691A (en) * | 2015-05-18 | 2015-08-19 | 中国科学院国家天文台 | L-band single-way bias low-noise cryogenic amplifier |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104852691A (en) * | 2015-05-18 | 2015-08-19 | 中国科学院国家天文台 | L-band single-way bias low-noise cryogenic amplifier |
| CN104852691B (en) * | 2015-05-18 | 2017-11-21 | 中国科学院国家天文台 | A kind of L-band single channel biases low noise acoustic refrigeration amplifier |
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