CN204614935U - A kind of bipolarity oscillator of high-gain - Google Patents

Abstract

The utility model discloses a kind of bipolarity oscillator of high-gain, include two laterally zygomorphic oscillator unit; Described each oscillator unit includes leg-of-mutton first radiation fin, is formed with leg-of-mutton endoporus in described first radiation fin; The transition radiation plate had with its base vertical is extended on the base of described first radiation fin, and the free end of described transition radiation plate is provided with second radiation fin parallel with the base of the first radiation fin; By excellent structural design, all show excellent communication electric parameter performance in 800MHZ to 950MHZ frequency range, concrete, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; Low frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.

Description

A kind of bipolarity oscillator of high-gain

Technical field

The utility model relates to a kind of bipolarity oscillator of high-gain.

Background technology

At present, micro-single antenna becomes in communication, especially the main flow of miniature antenna.Antenna a kind of high-frequency current is changed into radio wave transmission to space, while can collection space radio wave produce the device of high-frequency current.Antenna can regard the tuning circuit be made up of electric capacity and inductance as; This tuning circuit is at some Frequency point, and its capacitive and perception will be cancelled out each other, and circuit shows purely resistive, this phenomenon is referred to as resonance, and working frequency points corresponding to resonance phenomena is resonant frequency point, be in the energy of antenna resonant frequency point, its radiation characteristic is the strongest; And the antenna structure with resonance characteristic is called antenna oscillator, and the antenna structure of high-frequency current direct-drive is called active dipole, on the contrary be called parasitic element; In existing oscillator, comprise physics oscillator and micro-strip oscillator, use according to reality need to design antenna time, setting requirement is met in order to make the resonant frequency point of antenna, need to adjust the input impedance of antenna, the requirement of current communication standard still can not be met by the oscillator after adjustment and common oscillator, current communication standard is more and more higher, also more and more higher to the requirement of micro-strip oscillator, the gain of current oscillator, directivity, front and back are broken through than all needing to obtain, and realize above-mentioned breakthrough under the most important thing is to meet miniaturized prerequisite.

Summary of the invention

The purpose of this utility model is to overcome above-described shortcoming, and what provide a kind of high-gain, good directionality is provided with the bipolarity oscillator increasing aperture and isolation part frequently.

For achieving the above object, concrete scheme of the present utility model is as follows: a kind of bipolarity oscillator of high-gain, includes four and lays respectively at the oscillator unit be centrosymmetric up and down; Described each oscillator unit includes leg-of-mutton first radiation fin, is formed with leg-of-mutton endoporus in described first radiation fin; The transition radiation plate had with its base vertical is extended on the base of described first radiation fin, and the free end of described transition radiation plate is provided with second radiation fin parallel with the base of the first radiation fin;

Described bipolarity oscillator also includes two feed coupling lines be located between two oscillator unit, and described two feed coupling lines are corresponding to be respectively connected with two oscillator unit.

Wherein, the width of described transition radiation plate is 5mm-15cm.

Wherein, two base angles of described first radiation fin are provided with chamfering.

Wherein, the hem width of described first radiation fin is 5mm-10mm.

Wherein, described endoporus is equilateral triangle.

Wherein, the length of described second radiation fin is 30mm-40mm.

Wherein, the width of described second radiation fin is 2mm-4mm.

Wherein, the angle between described transition radiation plate and the base of the first radiation fin is provided with rounded corners.

Wherein, the both sides of described transition radiation plate are extended with the spacer bar of L shape respectively, and the free end of the spacer bar of described L shape is towards the side of the second radiation fin.

Wherein, described second radiation fin is provided with the increasing frequency band of a circle rectangle, is filled with semiconductor in described increasing frequency band;

Wherein, described second radiation fin is provided with zigzag isolation strip towards the side of the first radiation fin;

Wherein, described transition radiation plate is provided with the multiple first rectangle via hole formed a line and the multiple second rectangle via holes formed a line, and the lateral separation between described first rectangle via hole and the second rectangle via hole is 1mm; Be crisscross arranged between described each first rectangle via hole and the second adjacent rectangle via hole;

The beneficial effects of the utility model are: by excellent structural design, excellent communication electric parameter performance is all shown in 800MHZ to 950MHZ frequency range, concrete, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; Low frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.

Accompanying drawing explanation

Fig. 1 is front view of the present utility model;

Fig. 2 is the partial enlarged drawing of Fig. 1;

Fig. 3 be when frequency is 800MHZ before and after the experimental data figure of ratio;

Fig. 4 be when frequency is 890MHZ before and after the experimental data figure of ratio;

Fig. 5 be when frequency is 920MHZ before and after the experimental data figure of ratio;

Fig. 6 be when frequency is 950MHZ before and after the experimental data figure of ratio;

Fig. 7 is the directional diagram representing gain when frequency is 800MHZ;

Fig. 8 is the directional diagram representing gain when frequency is 890MHZ;

Fig. 9 is the directional diagram representing gain when frequency is 950MHZ;

Description of reference numerals in Fig. 1 to Fig. 9:

1-first radiation fin; 11-endoporus;

2-transition radiation plate; 21-first rectangle via hole; 22-second rectangle via hole;

3-spacer bar;

4-second radiation fin; 41-increases frequency band;

5-isolation strip;

6-feed coupling line.

Embodiment

Being described in further detail the utility model below in conjunction with the drawings and specific embodiments, is not that practical range of the present utility model is confined to this.

As shown in Figures 1 to 9, the bipolarity oscillator of a kind of high-gain described in the present embodiment, includes four and lays respectively at the oscillator unit be centrosymmetric up and down; Described each oscillator unit includes leg-of-mutton first radiation fin 1, is formed with leg-of-mutton endoporus 11 in described first radiation fin 1; The transition radiation plate 2 had with its base vertical is extended on the base of described first radiation fin 1, and the free end of described transition radiation plate 2 is provided with second radiation fin 4 parallel with the base of the first radiation fin 1; Described bipolarity oscillator also includes two feed coupling lines be located between two oscillator unit, and described two feed coupling lines are corresponding to be respectively connected with two oscillator unit;

By continuous microstrip circuit structural design, and by under continuous test and parameter adjustment, finally determine this microstrip circuit structure, excellent communication electric parameter performance is all shown in 800MHZ to 950MHZ frequency range, concrete, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; Low frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.

Concrete actual test result such as following table HFSS15 software calculates:

Test frequency range section

Ratio before and after in frequency band

Corresponding gain

800MHz

31.225dB

9.3521dBi

820MHz

31.927dB

9.4956dBi

850MHz

32.312dB

9.5352dBi

870MHz

32.807dB

9.6149dBi

890MHz

33.635dB

9.7550dBi

910MHz

33.908dB

9.8321dBi

920MHz

34.135dB

9.9115dBi

940MHz

35.232dB

9.9960dBi

950 MHz

36.000dB

10.200dBi

As shown above, it all shows excellent communication electric parameter performance in 800MHz to 950MHz frequency range, concrete, is greater than 31dB before and after the minimum frequency of single radiating element than all, at 950MHz, than being 36dB before and after the minimum frequency of single radiating element; And low frequency dot gains is all greater than 9.35dBi, in frequency band, average gain is greater than 9.8dBi.

From experimental data, specifically intercept the gain data figure of front and back than datagram and three frequency ranges of four frequency ranges, as Fig. 3 to Fig. 9, achieve excellent front and back specific characteristic at 800MHz to 950MHz, wherein, when 800MHz, as Fig. 3, than being 31.225dB before and after in its frequency band; When 890MHz, as Fig. 4, than being 33.635dB before and after in its frequency band; When 920MHz, as Fig. 5, than being 34.135dB before and after in its frequency band; When 950MHz, as Fig. 6, than being 36.000dB before and after in its frequency band; And the performance in gain: as Fig. 7, it is when 800MHz, and its gain reaches: 9.3521 dBi; As Fig. 8, it is when 890MHz, and its gain reaches: 9.7550dBi; As Fig. 9, it is when 950MHz, and its gain reaches: 10.200dBi; Can learn, than being greater than 33dB before and after in it is average, its gain is on average greater than 9.8dBi.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, the width of described transition radiation plate 2 is 5mm-15cm.Record by experiment, the width of described transition radiation plate 2 is 5mm-15cm, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, two base angles of described first radiation fin 1 are provided with chamfering.Record by experiment, two base angles are provided with chamfering, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, the hem width of described first radiation fin 1 is 5mm-10mm.Record by experiment, the hem width of described first radiation fin 1 is 5mm-10mm, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, described endoporus 11 is equilateral triangle.Record by experiment, described endoporus 11 is equilateral triangle, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, the length of described second radiation fin 4 is 30mm-40mm.Record by experiment, the length of described second radiation fin 4 is 30mm-40mm, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, the width of described second radiation fin 4 is 2mm-4mm.Record by experiment, the width of described second radiation fin 4 is 2mm-4mm, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, the angle between described transition radiation plate 2 and the base of the first radiation fin 1 is provided with rounded corners.Record by experiment, the angle between described transition radiation plate 2 and the base of the first radiation fin 1 is provided with rounded corners, effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, the both sides of described transition radiation plate 2 are extended with the spacer bar 3 of L shape respectively, and the free end of the spacer bar 3 of described L shape is towards the side of the second radiation fin 4.Record by experiment, the spacer bar 3 arranging L shape effectively can increase isolation.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, described second radiation fin 4 is provided with the increasing frequency band 41 of a circle rectangle, is filled with semiconductor in described increasing frequency band 41; Record by experiment, it effectively can strengthen the gain effect of high band.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, described second radiation fin 4 is provided with zigzag isolation strip 5 towards the side of the first radiation fin 1; Record by experiment, arranging isolation strip 5 effectively can increase isolation, and isolation is at 30dB.

The bipolarity oscillator of a kind of high-gain described in the present embodiment, described transition radiation plate 2 is provided with the multiple first rectangle via hole 21 formed a line and the multiple second rectangle via holes 22 formed a line, and the lateral separation between described first rectangle via hole 21 and the second rectangle via hole 22 is 1mm; Be crisscross arranged between described each first rectangle via hole 21 and the second adjacent rectangle via hole 22; By this structural design, the electric current theoretical length flowing through transition radiant panel 2 can be made to increase, and realize the effect improving gain, arranged by this mode, its successful increased, gain is significantly increased.

By excellent structural design, by constantly testing and under parameter adjustment, achieving excellent front and back specific characteristic, than being greater than 30dB before and after the minimum frequency of single radiating element, before and after in frequency band, be greater than 32dB than on average; And have higher module gain, according to data measured, as can be seen from directional diagram, its lowest frequency dot gains is greater than 9.37dBi, and in frequency band, average gain is greater than 9.8dBi.

The above is only a preferred embodiment of the present utility model, therefore all equivalences done according to structure, feature and the principle described in the utility model patent claim change or modify, and are included in the protection range of the utility model patent application.

Claims (8)

1. a bipolarity oscillator for high-gain, is characterized in that: include four and lay respectively at the oscillator unit be centrosymmetric up and down; Described each oscillator unit includes leg-of-mutton first radiation fin (1), is formed with leg-of-mutton endoporus (11) in described first radiation fin (1); The transition radiation plate (2) had with its base vertical is extended on the base of described first radiation fin (1), and the free end of described transition radiation plate (2) is provided with second radiation fin (4) parallel with the base of the first radiation fin (1);

Described bipolarity oscillator also includes two feed coupling lines (6) be located between two oscillator unit, and described two feed coupling lines (6) are corresponding to be respectively connected with two oscillator unit;

The both sides of described transition radiation plate (2) are extended with the spacer bar (3) of L shape respectively, and the free end of the spacer bar (3) of described L shape is towards the side of the second radiation fin (4);

Described second radiation fin (4) is provided with the increasing frequency band (41) of a circle rectangle, is filled with semiconductor in described increasing frequency band (41).

2. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: the width of described transition radiation plate (2) is 5mm-15cm.

3. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: two base angles of described first radiation fin (1) are provided with chamfering.

4. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: the hem width of described first radiation fin (1) is 5mm-10mm.

5. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: described endoporus (11) is equilateral triangle.

6. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: the length of described second radiation fin (4) is 30mm-40mm.

7. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: the width of described second radiation fin (4) is 2mm-4mm.

8. the bipolarity oscillator of a kind of high-gain according to claim 1, is characterized in that: the angle between described transition radiation plate (2) and the base of the first radiation fin (1) is provided with rounded corners.