CN204596790U - Display floater - Google Patents
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- CN204596790U CN204596790U CN201520203427.1U CN201520203427U CN204596790U CN 204596790 U CN204596790 U CN 204596790U CN 201520203427 U CN201520203427 U CN 201520203427U CN 204596790 U CN204596790 U CN 204596790U
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Abstract
The utility model embodiment provides a kind of display floater, and it comprises substrate, the first structure unit and second that changes and to change structure unit.The first structure unit that changes to be arranged on substrate and to be connected with scan line.The first structure unit that changes comprises the first conductive layer, the second conductive layer, at least one first through hole and the first protuberance.First conductive layer is between the second conductive layer and described substrate.First through hole is communicated with the first conductive layer and the second conductive layer.The second structure unit that changes to be arranged on substrate and to comprise the 3rd conductive layer, the 4th conductive layer, semiconductor layer, at least one second through hole and the second protuberance.3rd conductive layer is the 4th between conductive layer and substrate.Second through hole is communicated with the 3rd conductive layer and the 4th conductive layer.Wherein, the first protuberance and the second protuberance are oppositely arranged.First of display floater of the present utility model structure unit and the second structure unit that changes that changes can improve the situation of the static discharge in viewing area, plays the effect of electrostatic defending.
Description
Technical field
The utility model relates to a kind of structure of display floater, and in particular to a kind of display floater with electrostatic defending.
Background technology
Thin Film Transistor-LCD (Thin film transistor liquid crystaldisplay, TFT-LCD) common at present comprises active component array base board, colored filter and backlight module.Active component array base board is arranged on substrate by thin-film transistor, and thin-film transistor is in order to control the voltage of sub-pixel (sub-pixel), adjustable liquid crystal display molecule deflection angle by this, then through the GTG of the further determinant pixel of polaroid.GTG collocation through sub-pixel is enameled filter, thus the sub-pixel sending red bluish-green color just forms image frame.
In general, in the operation of assembling one Thin Film Transistor-LCD, each step likely causes buildup of static electricity.When the buildup of static electricity of active component array base board is to time to a certain degree, often cause a large amount of static discharges (Electro-Static discharge, ESD), cause inner member or circuit damage or breakdown.Therefore, how to carry out electrostatic defending and seem important all the more.
Utility model content
The utility model embodiment provides a kind of display floater, and its first structure unit and second structure unit that changes that changes formed can improve the situation of the static discharge (Electrostatic Discharge, ESD) in viewing area.
According to embodiment of the present utility model, provide a kind of display floater, this display floater comprises: a substrate, has a viewing area and a non-display area; At least one first changes structure unit, to be arranged on described substrate and to be positioned at described non-display area, and the described first structure unit that changes is connected with a scan line extending to described non-display area by described viewing area, and the described first structure unit that changes comprises: one first conductive layer; One second conductive layer, wherein, described first conductive layer is between the second conductive layer and described substrate; At least one first through hole, is communicated with described first conductive layer and described second conductive layer; And one first protuberance, at least one of them is connected with described second conductive layer with described first conductive layer; And at least one second changes structure unit, being arranged on described substrate and being positioned at described non-display area, the described second structure unit that changes comprises: one the 3rd conductive layer; One the 4th conductive layer, wherein, described 3rd conductive layer is between described 4th conductive layer and described substrate; Semi-conductor layer, between described 3rd conductive layer and described 4th conductive layer; At least one second through hole, is communicated with described 3rd conductive layer and described 4th conductive layer; And one second protuberance, one of them is connected with described 3rd conductive layer and described 4th conductive layer, and wherein, described first protuberance and described second protuberance are oppositely arranged.
Further, described first conductive layer is connected with described scan line.
Further, described first protuberance and described second protuberance all have one most advanced and sophisticated, and at least one of them the described tip of described first protuberance and described second protuberance corresponds to the spacing place between described second through hole that the spacing place or two between two described first through holes be disposed adjacent is disposed adjacent.
Further, the described tip of described first protuberance has one first angle, and the described tip of described second protuberance has one second angle, and the angular range of described first angle and described second angle is all between 1 °-170 °.
Further, the spacing between described first protuberance and described second protuberance is between 0.1-10 μm.
Further, the edge of described first conductive layer and the edge of described second conductive layer stagger.
Further, the described first change described second conductive layer of structure unit and corner of described first conductive layer all has corner cut.
Further, the described first structure unit that changes more comprises one first insulating barrier and one second insulating barrier, described first insulating barrier to be positioned on described first conductive layer and to be formed with one first opening, described second insulating barrier to be positioned on described first insulating barrier and to be formed with the second opening of corresponding described first opening, and described first through hole is made up of described first opening and described second opening.
Further, the aperture of described second opening is greater than the aperture of described first opening.
Further, described first opening has one first aperture edge, and described second opening has one second aperture edge, and the spacing between described second aperture edge and described first aperture edge of the opposite end position of described first through hole is not etc.
Further, adjacent described second change between structure unit by along being connected in series perpendicular to described 3rd conductive layer of the bearing of trend of described scan line.
Further, described 3rd conductive layer has a serial connection portion, and described in each, the second structure unit that changes connects by each described serial connection portion respectively, and wherein, the line width in described serial connection portion is less than the non-line width being positioned at described serial connection portion of described 3rd conductive layer.
Further, the described second structure unit that changes more comprises one the 3rd insulating barrier and one the 4th insulating barrier, described 3rd insulating barrier to be covered on described 3rd conductive layer and to be formed with one the 3rd opening, described 4th insulating barrier is between described 3rd insulating barrier with described 4th conductive layer and be formed with the 4th opening of corresponding described 3rd opening, and described second through hole is made up of described 3rd opening and described 4th opening.
Further, the aperture of described 4th opening is greater than the aperture of described 3rd opening.
Further, the described second structure unit that changes more comprises one the 3rd insulating barrier, one the 4th insulating barrier, described 3rd insulating barrier is between described 3rd conductive layer and described semiconductor layer, described 4th insulating barrier is between described semiconductor layer and described 4th conductive layer and be formed with a third through-hole, and described third through-hole is communicated with described semiconductor layer and described 4th conductive layer.
Further, described display floater more comprises at least one semiconductor element being positioned at described non-display area, and described semiconductor element is connected to the described first structure unit and described second that changes and changes structure unit.
Further, described semiconductor element comprises: one the 5th conductive layer, to be positioned on described substrate and to be connected with described 3rd conductive layer with described first conductive layer; One the 6th conductive layer, is connected with described second conductive layer and described 4th conductive layer; One second semiconductor layer, between described 5th conductive layer and described 6th conductive layer; At least one fourth hole, is communicated with described 5th conductive layer and described 6th conductive layer; And at least one fifth hole, be communicated with described 6th conductive layer and described second semiconductor layer.
Further, described semiconductor layer is metal-oxide semiconductor.
The utility model is a kind of display floater of providing of an embodiment wherein, and it comprises substrate, the first structure unit and second that changes and to change structure unit.Substrate has viewing area and non-display area.The first structure unit that changes to be arranged on substrate and to be positioned at non-display area.The first structure unit that changes is connected with the scan line being extended to non-display area by viewing area.The first structure unit that changes comprises the first conductive layer, the second conductive layer, at least one first through hole and the first protuberance.First conductive layer is between the second conductive layer and described substrate.First through hole is communicated with the first conductive layer and the second conductive layer.At least one of them is connected for first protuberance and the first conductive layer or the second conductive layer.
The second structure unit that changes to be arranged on substrate and to be positioned at non-display area.The second structure unit that changes comprises the 3rd conductive layer, the 4th conductive layer, semiconductor layer, at least one second through hole and the second protuberance.3rd conductive layer is the 4th between conductive layer and substrate.Semiconductor layer is between the 3rd conductive layer and the 4th conductive layer.Second through hole is communicated with the 3rd conductive layer and the 4th conductive layer.At least one of them is connected for second protuberance and the 3rd conductive layer or the 4th conductive layer, and wherein, the first protuberance and the second protuberance are oppositely arranged.
In sum, the display floater that the utility model embodiment provides comprises the first structure unit and second that changes and to change structure unit, wherein, change the first protuberance of structure unit of second the second protuberance and first changing structure unit is oppositely arranged, thus the first protuberance the electric charge at tip carry out with the electric charge of the second protuberance through point discharge in and.
What deserves to be explained is, the first structure unit that changes has the first through hole, and the second structure unit that changes has the second through hole and third through-hole.The excess charge be not neutralized second can to change structure unit and deriving to be passed to another through the serial connection portion of the 3rd conductive layer of the second protuberance, in addition can also be passed to the 4th conductive layer through the second through hole by the 3rd conductive layer and derive, or be passed to semiconductor layer through third through-hole by the 3rd conductive layer and accumulation be stored in semiconductor layer.
In addition, if when the second through hole lost efficacy for some reason and the excess charge be not neutralized cannot be passed to the 4th conductive layer by the 3rd conductive layer and derive, third through-hole can be processed, such as punch semiconductor layer with laser (laser), make the 4th conductive layer can with the 3rd conductive layer welding (welding).Therefore, the excess charge be not neutralized can also can be passed to the 4th conductive layer by the 3rd conductive layer through the third through-hole after processing and derive.
In addition, display floater more can comprise semiconductor element, semiconductor element and first structure unit and the second structure unit that changes that changes is connected, and the excess charge come from viewing area can also be derived by semiconductor element, helps avoid the element infringement that buildup of static electricity causes.
In addition, for avoiding the place of point discharge beyond the first protuberance and the second protuberance to occur, the corner of the first conductive layer, the second conductive layer, the 3rd conductive layer and the 4th conductive layer can have corner cut.
In order to further understand feature of the present utility model and technology contents, refer to following about detailed description of the present utility model and accompanying drawing, but accompanying drawing only provide reference and explanation use, is not used for being limited the utility model.
Accompanying drawing explanation
Fig. 1 is the partial schematic schematic top plan view of the display floater of the utility model one embodiment.
Fig. 2 is the generalized section that in Fig. 1, O-O section along the line illustrates.
Fig. 3 A is the generalized section that in Fig. 1, P-P section along the line illustrates.
Fig. 3 B is the generalized section that in Fig. 1, Q-Q section along the line illustrates.
Fig. 4 is the generalized section that in Fig. 1, R-R section along the line illustrates.
Embodiment
Show some exemplary embodiments in the accompanying drawings, and hereafter by accompanying drawings to describe various exemplary embodiments more fully.What deserves to be explained is, the utility model concept may embody in many different forms, and should not be construed as and be limited to set forth exemplary embodiments herein.Specifically, these exemplary embodiments are provided to make the utility model for detailed and complete, and will will fully pass on the category of the utility model concept to those skilled in the art.In each figure, in order to make illustrated each layer and each region can be explicit, and the ratio of its relative size can be exaggerated, and similar numeral indicates like all the time.
Fig. 1 is the partial schematic schematic top plan view of the display floater of the utility model one embodiment.In general, display floater can be a liquid crystal panel, organic exciting light panel etc.With liquid crystal panel, sealing fluid crystal layer between a substrate 100 and a counter substrate substantially.Substrate 100 has viewing area M1 and non-display area M2, and the non-display area M2 described in this is located on outside the M1 of viewing area, and non-display area M2 comprises the periphery routing region of gate driver circuit and data drive circuit etc.Substrate 100 is provided with at least one first structure unit A1, at least one second that changes to change structure unit A2, active cell array, scan line SL and data wire DL.Each scan line SL parallel to each other and with row direction extend to non-display area M2 by viewing area M1, and each data wire DL parallel to each other and with row direction extend to non-display area M2 by viewing area M1.Wherein, these scan lines SL and data wire DL is interlaced with each other and define multiple sub-pixel unit, and each active member is then arranged at viewing area M1 and is positioned at the staggered place of these scan lines SL and data wire DL.First structure unit A1 and the second structure unit A2 that changes that changes all is positioned at non-display area M2 and positioned opposite to each other, and the first scan line SL that structure unit A1 and extends to non-display area M2 that changes is connected.
Fig. 2 is the generalized section that in Fig. 1, O-O section along the line illustrates.Refer to Fig. 2 and coordinate contrast Fig. 1, the first structure unit A1 that changes comprises the first conductive layer 112 and the second conductive layer 132.First conductive layer 112 is arranged on substrate 100, and the second conductive layer 132 is positioned on the first conductive layer 112, that is the first conductive layer 112 is between the second conductive layer 132 and substrate 100.What deserves to be explained is, second conductive layer 132 stacks on the first conductive layer 112 haply, it is seen from counter substrate toward the direction of substrate 100 from overlooking visual angle, the geometric center of the first conductive layer 112 does not overlap in the direction perpendicular to substrate 100 with the geometric center of the second conductive layer 132, that is, the edge of the first conductive layer 112 do not overlap with the edge of the second conductive layer 132, that is the edge system of the edge of the first conductive layer 112 and the second conductive layer 132 staggers.
First conductive layer 112 is connected with scan line SL, and in fact, the first conductive layer 112 and scan line SL all belong to the conductive layer 110 of same layer, and therefore, it can pass through and is jointly formed with technique.In addition, in fact, the second conductive layer 132 and data wire DL all belong to the conductive layer 130 of same layer, and therefore, it can pass through and is jointly formed with technique.
The first structure unit A1 that changes can comprise the first insulating barrier 142, and the first insulating barrier 142 is positioned on the first conductive layer 112.In fact, the first insulating barrier 142 is connected to each other with gate insulator (gate insulatinglayer, GIL), and belongs to the insulating barrier 140 of same layer.First insulating barrier 142 is formed with the first opening V1, and the first opening V1 exposes part first conductive layer 112.
In addition, the first structure unit A1 that changes more can comprise one and is positioned at the second insulating barrier 162 on the first insulating barrier 142, and the first insulating barrier 142 and the second insulating barrier 162 are between the first conductive layer 112 and the second conductive layer 132.In fact, the second insulating barrier 162 is connected to each other with etch stop layer (etch stoplayer, ESL), and belongs to the insulating barrier 160 of same layer.Second insulating barrier 162 is formed with one second opening V2, and the position of the second opening V2 corresponds to the first opening V1 position.First opening V1 and the second opening V2 forms the first through hole H1.First through hole H1 exposes part first conductive layer 112, second conductive layer 132 by the first through hole H1 and is connected with the first conductive layer 112.That is, the first through hole H1 is communicated with the first conductive layer 112 and the second conductive layer 132.
Specifically, the first opening V1 has the first aperture edge V1a, the aperture C1 size of the first opening V1 be the first aperture edge V1a enclose the scope of structure.Second opening V2 has the second aperture edge V2a, and the aperture C2 size of the second opening V2 be the second aperture edge V2a enclose the scope of structure.The aperture C2 of the second opening V2 is greater than the aperture C1 of the first opening V1.The spacing that it should be noted that between the second aperture edge V2a and the first aperture edge V1a of the opposite end position of the first through hole H1 can not be homogeneous depending on technological parameter or not etc.
In the present embodiment, first protuberance P1 is connected with the first conductive layer 112 and belongs to same layer, first protuberance P1 comprises a tip, wherein, tip has the angular range of the first angle theta 1 between 1 °-170 ° (degree), and preferably angular range is between 40 °-140 ° (degree).But, in other embodiments, the first protuberance P1 is connected with the second conductive layer 132 and belongs to same layer.The utility model not to be connected with the first conductive layer 112 or the second conductive layer 132 the first protuberance P1 and to be limited.
Fig. 3 A is the generalized section that in Fig. 1, P-P section along the line illustrates.Fig. 3 B is the generalized section that in Fig. 1, Q-Q section along the line illustrates.Refer to Fig. 3 A and Fig. 3 B and coordinate contrast Fig. 1, the second structure unit A2 that changes comprises the 3rd conductive layer 114, the 4th conductive layer 134 and semiconductor layer 152.3rd conductive layer 114 is arranged on substrate 100, and the 4th conductive layer 134 is positioned on the 3rd conductive layer 114, and semiconductor layer 152 is between the 3rd conductive layer 114 and the 4th conductive layer 134.
In fact, the 3rd conductive layer 114, first conductive layer 112 and scan line SL all belong to the conductive layer 110 of same layer, and therefore, it can pass through and is jointly formed with technique.In addition, in fact, the 4th conductive layer 134, second conductive layer 132 and data wire DL all belong to the conductive layer 130 of same layer, and therefore, it can pass through and is jointly formed with technique.
Adjacent second changes between structure unit A2 is through along being connected in series perpendicular to the 3rd conductive layer 114 of the bearing of trend of scan line SL.Specifically, the second the 3rd conductive layer 114 changing structure unit A2 has serial connection portion 114a, and each second structure unit A2 that changes connects by each serial connection portion 114a respectively.What deserves to be explained is, the conductive layer 130 that extended by the second conductive layer 132 can be crossed over second of serial connection via serial connection portion 114a and to change structure unit A2, therefore make the line width of the serial connection portion 114a of the 3rd conductive layer 114 be less than the non-line width being positioned at serial connection portion 114a of the 3rd conductive layer 114, thus reduce the increase situation of the parasitic capacitance being present in conductive layer 130 and conductive layer 110 overlapping place.
The second structure unit A2 that changes can comprise the 3rd insulating barrier 144, and the 3rd insulating barrier 144 is covered on the 3rd conductive layer 114, and between the 3rd conductive layer 114 and semiconductor layer 152.In fact, the 3rd insulating barrier 144, first insulating barrier 142 is connected to each other with gate insulator (gate insulating layer, GIL) three, and belongs to the insulating barrier 140 of same layer.As Fig. 3 A illustrate, the 3rd insulating barrier 144 is formed with the 3rd opening V3, the 3rd opening V3 expose part the 3rd conductive layer 114.
Semiconductor layer 152 is between the 3rd conductive layer 114 and the 4th conductive layer 134.Refer to Fig. 3 B, semiconductor layer 152 is positioned on the 3rd insulating barrier 144.In fact, semiconductor layer 152 and channel layer belong to same layer.Therefore, the optional free polysilicon layer of the material of semiconductor layer 152, metal oxide semiconductor layer, one of them of group that form with amorphous silicon layer.In the present embodiment, the material of semiconductor layer 152 can be selected from indium oxide gallium zinc (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide (Zinc oxide, ZnO), tin oxide (Stannous oxide, SnO), indium zinc oxide (Indium-Zinc Oxide, IZO), gallium oxide zinc (Gallium-Zinc Oxide, GaZnO), zinc-tin oxide (Zinc-Tin Oxide, ZTO), tin indium oxide (Indium-Tin Oxide, ITO) and to mix among the group that forms wherein a kind of.In the present embodiment, the material of semiconductor layer 152 is indium oxide gallium zinc.But, the utility model is not limited this.
In addition, the second structure unit A2 that changes more can comprise one and is positioned at the 4th insulating barrier 164 on semiconductor layer 152 and the 3rd insulating barrier 144, and the 3rd insulating barrier 144, semiconductor layer 152 and the 4th insulating barrier 164 are all between the first conductive layer 112 and the second conductive layer 132.In fact, the 4th insulating barrier 164, second insulating barrier 162 is connected to each other with etch stop layer (etch stop layer, ESL), and belongs to the insulating barrier 160 of same layer.As Fig. 3 A illustrate, the 4th insulating barrier 164 is formed with one the 4th opening V4, and the position of the 4th opening V4 corresponds to the 3rd opening V3 position.3rd opening V3 and the 4th opening V4 forms the second through hole H2.Second through hole H2 exposes part the 3rd conductive layer the 114, four conductive layer 134 by the second through hole H2 and is connected with the 3rd conductive layer 114.That is, the second through hole H2 is communicated with the 3rd conductive layer 114 and the 4th conductive layer 134.
Specifically, the 3rd opening V3 has the 3rd aperture edge V3a, the aperture C3 size of the 3rd opening V3 be the 3rd aperture edge V3a enclose the scope of structure.4th opening V4 has the 4th aperture edge V4a, and the aperture C4 size of the 4th opening V4 be the 4th aperture edge V4a enclose the scope of structure.The aperture C4 of the 4th opening V4 is greater than the aperture C3 of the 3rd opening V3.The spacing that it should be noted that between the 4th aperture edge V4a and the 3rd aperture edge V3a of the opposite end position of the second through hole H2 can not be homogeneous depending on technological parameter or not etc.
Refer to Fig. 3 B, the 4th insulating barrier 164 can be formed with a third through-hole H3, and semiconductor layer the 152, four conductive layer 134 that third through-hole H3 exposes part is connected with semiconductor layer 152 by third through-hole H3.The maximum diameter of hole of the second through hole H2 is the aperture C4 of the 4th opening V4, and more preferably, aperture C4 is greater than the aperture C5 of third through-hole H3.
In the present embodiment, second protuberance P2 is connected with the 3rd conductive layer 114 and belongs to same layer, second protuberance P2 comprises a tip, the tip of the second protuberance P2 has the second angle theta 2, its angular range is between 1 °-170 ° (degree), and preferably angular range is between 40 °-140 ° (degree).But, in other embodiments, the second protuberance P2 is connected with the 4th conductive layer 134 and belongs to same layer.The utility model not to be connected with the 3rd conductive layer 114 or the 4th conductive layer 134 the second protuberance P2 and to be limited.
Specifically, the second protuberance P2 and the first protuberance P1 is oppositely arranged.What deserves to be explained is, the spacing between the first protuberance P1 and the second protuberance P2 between 0.1-20 μm (micron), preferably between 0.1-10 μm (micron).Occur in the viewing area M1 of display floater improperly charge accumulation time, the electric charge accumulated in display floater is passed to the first protuberance P1 of non-display area M2 by viewing area M1 through scan line SL.These electric charges at the tip of the first protuberance P1 can accumulate on the tip of the second protuberance P2 to electrical charge concentration by suction phase, thus the electric charge at the tip of the first protuberance P1 carry out with the electric charge of the second protuberance P2 through point discharge in and.
What deserves to be explained is, the excess charge be not neutralized can be derived through three kinds of modes, helps avoid the element infringement that buildup of static electricity causes.One, the excess charge be not neutralized second can be changed structure unit A2 and deriving to be passed to another by the serial connection portion 114a of the 3rd conductive layer 114 through the second protuberance P2.Its two, the excess charge be not neutralized can also be passed to the 4th conductive layer 134 through the second through hole H2 by the 3rd conductive layer 114 and derive.Its two, the excess charge be not neutralized can also be passed to semiconductor layer 152 through third through-hole H3 by the 3rd conductive layer 114, and accumulation be stored in semiconductor layer 152.
Further, in order to reduce a large amount of electrostatic charges by first change structure unit A1 point discharge to the second change structure unit A2 cause being adjacent to most advanced and sophisticated the first through hole H1, the second through hole H2 or third through-hole H3 by the probability of wounding, the tip location of the first protuberance P1 corresponds to the spacing place between adjacent two the first through hole H1, and the tip location of the second protuberance P2 corresponds to the spacing place between adjacent two third through-hole H3.
In addition, if when the second through hole H2 lost efficacy for some reason and the excess charge be not neutralized cannot be passed to the 4th conductive layer 134 by the 3rd conductive layer 114 and derive, third through-hole H3 can be processed, such as punch semiconductor layer 152 with laser (laser), make the 4th conductive layer 134 can with the 3rd conductive layer 114 welding (welding).Therefore, the excess charge be not neutralized can also can be passed to the 4th conductive layer 134 by the 3rd conductive layer 114 through the third through-hole H3 after processing and derive.
In addition, for avoiding the place of point discharge beyond the first protuberance P1 and the second protuberance P2 to occur, the corner of the first conductive layer 112, second conductive layer 132, the 3rd conductive layer 114 and the 4th conductive layer 134 can have corner cut.
Fig. 4 is the generalized section that in Fig. 1, R-R section along the line illustrates.Refer to Fig. 4 and coordinate contrast Fig. 1, display floater more comprises at least one the semiconductor element D1 being positioned at non-display area M2, semiconductor element D1 and first structure unit A1 and the second structure unit A2 that changes that changes and is connected.Semiconductor element D1 is a kind of diode, and the excess charge come from the M1 of viewing area can also be derived by semiconductor element D1, helps avoid the element infringement that buildup of static electricity causes.
Specifically, semiconductor element D1 comprises the 5th conductive layer 116, the 6th conductive layer 136 and the second semiconductor layer 154.5th conductive layer 116 is arranged on substrate 100, and the 6th conductive layer 136 is positioned on the 5th conductive layer 116, and the second semiconductor layer 154 is between the 5th conductive layer 116 and the 6th conductive layer 136.
In fact, the 5th conductive layer 116, the 3rd conductive layer 114, first conductive layer 112 and scan line SL three are connected to each other, and all belong to the conductive layer 110 of same layer.6th conductive layer 136, the 4th conductive layer 134, second conductive layer 132 and data wire DL all belong to the conductive layer 130 of same layer.In addition, the second semiconductor layer 154, semiconductor layer 152 all belong to same layer with channel layer (channel layer).Therefore, above-mentionedly can jointly to be formed through same technique respectively with Rotating fields.
Semiconductor element D1 can comprise pentasyllabic quatrain edge layer 146, and pentasyllabic quatrain edge layer 146 is covered on the 5th conductive layer 116, and between the 5th conductive layer 116 and the second semiconductor layer 154.In fact, pentasyllabic quatrain edge layer 146, the 3rd insulating barrier 144, first insulating barrier 142 are connected to each other with gate insulator (gate insulating layer, GIL) three, and belong to the insulating barrier 140 of same layer.As Fig. 4 illustrate, pentasyllabic quatrain edge layer 146 is formed with the 5th opening V5, the 5th opening V5 expose part the 5th conductive layer 116.
Second semiconductor layer 154 is positioned in pentasyllabic quatrain edge layer 146.Similarly, the optional free polysilicon layer of the material of the second semiconductor layer 154, metal oxide semiconductor layer, one of them of group that form with amorphous silicon layer.In the present embodiment, the material of semiconductor layer 152 can be selected from indium oxide gallium zinc (Indium-Gallium-Zinc Oxide, IGZO), zinc oxide (Zinc oxide, ZnO), tin oxide (Stannous oxide, SnO), indium zinc oxide (Indium-Zinc Oxide, IZO), gallium oxide zinc (Gallium-Zinc Oxide, GaZnO), zinc-tin oxide (Zinc-Tin Oxide, ZTO), tin indium oxide (Indium-Tin Oxide, ITO) and to mix among the group that forms wherein a kind of.In the present embodiment, the second semiconductor layer 154 is all indium oxide gallium zinc with the material of semiconductor layer 152.But, the utility model is not limited this.
In addition, semiconductor element D1 more can comprise one and be positioned at the 6th insulating barrier 166 in the second semiconductor layer 154 and pentasyllabic quatrain edge layer 146, and pentasyllabic quatrain edge layer 146, second semiconductor layer 154 and the 6th insulating barrier 166 are all between the 5th conductive layer 116 and the 6th conductive layer 136.In fact, the 6th insulating barrier 166, the 4th insulating barrier 164, second insulating barrier 162 are connected to each other with etch stop layer (etch stoplayer, ESL), and belong to the insulating barrier 160 of same layer.6th insulating barrier 166 is formed with one the 6th opening V6, and the position of the 6th opening V6 corresponds to the position of the 5th opening V5.5th opening V5 and the 6th opening V6 forms fourth hole H4.Fourth hole H4 exposes part the 5th conductive layer the 116, six conductive layer 136 by fourth hole H4 and is connected with the 5th conductive layer 116.
Specifically, the 5th opening V5 has the 5th aperture edge V5a, the aperture C6 size of the 5th opening V5 be the 5th aperture edge V5a enclose the scope of structure.6th opening V6 has the 6th aperture edge V6a, and the aperture C7 size of the 6th opening V6 be the 6th aperture edge V6a enclose the scope of structure.The aperture C7 of the 6th opening V6 is greater than the aperture C6 of the 5th opening V5.The spacing that it should be noted that between the 6th aperture edge V6a and the 5th aperture edge V5a of the opposite end position of fourth hole H4 can not be homogeneous depending on technological parameter or not etc.
6th insulating barrier 166 can be formed with a fifth hole H5, and second semiconductor layer the 154, six conductive layer 136 that fifth hole H5 exposes part is connected with the second semiconductor layer 154 by fifth hole H5.
(possible effect of embodiment)
In sum, the display floater that the utility model embodiment provides comprises the first structure unit and second that changes and to change structure unit, wherein, change the first protuberance of structure unit of second the second protuberance and first changing structure unit is oppositely arranged, thus the electric charge at the tip of the first protuberance carry out with the electric charge of the second protuberance through point discharge in and.
What deserves to be explained is, the first structure unit that changes has the first through hole, and the second structure unit that changes has the second through hole and third through-hole.The excess charge be not neutralized second can to change structure unit and deriving to be passed to another through the serial connection portion of the 3rd conductive layer of the second protuberance, in addition can also be passed to the 4th conductive layer through the second through hole by the 3rd conductive layer and derive, or be passed to semiconductor layer through third through-hole by the 3rd conductive layer and accumulation be stored in semiconductor layer.
In addition, if when the second through hole lost efficacy for some reason and the excess charge be not neutralized cannot be passed to the 4th conductive layer by the 3rd conductive layer and derive, third through-hole can be processed, such as punch semiconductor layer with laser (laser), make the 4th conductive layer can with the 3rd conductive layer welding (welding).Therefore, the excess charge be not neutralized can also can be passed to the 4th conductive layer by the 3rd conductive layer through the third through-hole after processing and derive.
In addition, display floater more can comprise semiconductor element, semiconductor element and first structure unit and the second structure unit that changes that changes is connected, and the excess charge come from viewing area can also be derived by semiconductor element, helps avoid the element infringement that buildup of static electricity causes.
In addition, for avoiding the place of point discharge beyond the first protuberance and the second protuberance to occur, the corner of the first conductive layer, the second conductive layer, the 3rd conductive layer and the 4th conductive layer can have corner cut.
The foregoing is only better possible embodiments of the present utility model, non-ly therefore limit to protection range of the present utility model, therefore the equivalence techniques change that every utilization the utility model specification and accompanying drawing content are done, be all contained in protection range of the present utility model.
[symbol description]
100 substrates
110,130 conductive layers
112 first conductive layers
114 the 3rd conductive layers
114a serial connection portion
116 the 5th conductive layers
132 second conductive layers
134 the 4th conductive layers
136 the 6th conductive layers
140,160 insulating barriers
142 first insulating barriers
144 the 3rd insulating barriers
146 pentasyllabic quatrain edge layer
152 semiconductor layers
154 second semiconductor layers
162 second insulating barriers
164 the 4th insulating barriers
166 the 6th insulating barriers
A1 first changes structure unit
A2 second changes structure unit
C1, C2, C3, C4, C5, C6, C7 aperture
D1 semiconductor element
DL data wire
H1 first through hole
H2 second through hole
H3 third through-hole
H4 fourth hole
H5 fifth hole
M1 viewing area
M2 non-display area
SL scan line
P1 first protuberance
P2 second protuberance
V1 first opening
V1a first aperture edge
V2 second opening
V2a second aperture edge
V3 the 3rd opening
V3a the 3rd aperture edge
V4 the 4th opening
V4a the 4th aperture edge
V5 the 5th opening
V5a the 5th aperture edge
V6 the 6th opening
V6a the 6th aperture edge
θ 1 first angle
θ 2 second angle.
Claims (18)
1. a display floater, is characterized in that, this display floater comprises:
One substrate, has a viewing area and a non-display area;
At least one first changes structure unit, to be arranged on described substrate and to be positioned at described non-display area, and the described first structure unit that changes is connected with a scan line extending to described non-display area by described viewing area, and the described first structure unit that changes comprises:
One first conductive layer;
One second conductive layer, wherein said first conductive layer is between the second conductive layer and described substrate;
At least one first through hole, is communicated with described first conductive layer and described second conductive layer; And
One first protuberance, at least one of them is connected with described second conductive layer with described first conductive layer; And
At least one second changes structure unit, to be arranged on described substrate and to be positioned at described non-display area, and the described second structure unit that changes comprises:
One the 3rd conductive layer;
One the 4th conductive layer, wherein, described 3rd conductive layer is between described 4th conductive layer and described substrate;
Semi-conductor layer, between described 3rd conductive layer and described 4th conductive layer;
At least one second through hole, is communicated with described 3rd conductive layer and described 4th conductive layer; And
One second protuberance, with in described 3rd conductive layer and described 4th conductive layer, at least one of them is connected, wherein, described first protuberance and described second protuberance are oppositely arranged.
2. display floater according to claim 1, is characterized in that, described first conductive layer is connected with described scan line.
3. display floater according to claim 1, it is characterized in that, described first protuberance and described second protuberance all have one most advanced and sophisticated, and at least one of them the described tip of described first protuberance and described second protuberance corresponds to the spacing place between described second through hole that the spacing place or two between two described first through holes be disposed adjacent is disposed adjacent.
4. display floater according to claim 3, it is characterized in that, the described tip of described first protuberance has one first angle, and the described tip of described second protuberance has one second angle, and the angular range of described first angle and described second angle is all between 1 °-170 °.
5. display floater according to claim 3, is characterized in that, the spacing between described first protuberance and described second protuberance is between 0.1-10 μm.
6. display floater according to claim 1, is characterized in that, the edge of described first conductive layer and the edge of described second conductive layer stagger.
7. display floater according to claim 1, is characterized in that, the described first change described second conductive layer of structure unit and corner of described first conductive layer all has corner cut.
8. display floater according to claim 1, it is characterized in that, the described first structure unit that changes more comprises one first insulating barrier and one second insulating barrier, described first insulating barrier to be positioned on described first conductive layer and to be formed with one first opening, described second insulating barrier to be positioned on described first insulating barrier and to be formed with the second opening of corresponding described first opening, and described first through hole is made up of described first opening and described second opening.
9. display floater according to claim 8, is characterized in that, the aperture of described second opening is greater than the aperture of described first opening.
10. display floater according to claim 8, it is characterized in that, described first opening has one first aperture edge, described second opening has one second aperture edge, and the spacing between described second aperture edge and described first aperture edge of the opposite end position of described first through hole is not etc.
11. display floaters according to claim 1, is characterized in that, adjacent described second changes between structure unit is connected in series perpendicular to described 3rd conductive layer of the bearing of trend of described scan line by edge.
12. display floaters according to claim 11, it is characterized in that, described 3rd conductive layer has a serial connection portion, described in each, the second structure unit that changes connects by each described serial connection portion respectively, wherein, the line width in described serial connection portion is less than the non-line width being positioned at described serial connection portion of described 3rd conductive layer.
13. display floaters according to claim 1, it is characterized in that, the described second structure unit that changes more comprises one the 3rd insulating barrier and one the 4th insulating barrier, described 3rd insulating barrier to be covered on described 3rd conductive layer and to be formed with one the 3rd opening, described 4th insulating barrier is between described 3rd insulating barrier with described 4th conductive layer and be formed with the 4th opening of corresponding described 3rd opening, and described second through hole is made up of described 3rd opening and described 4th opening.
14. display floaters according to claim 13, is characterized in that, the aperture of described 4th opening is greater than the aperture of described 3rd opening.
15. display floaters according to claim 1, it is characterized in that, the described second structure unit that changes more comprises one the 3rd insulating barrier, one the 4th insulating barrier, described 3rd insulating barrier is between described 3rd conductive layer and described semiconductor layer, described 4th insulating barrier is between described semiconductor layer and described 4th conductive layer and be formed with a third through-hole, and described third through-hole is communicated with described semiconductor layer and described 4th conductive layer.
16. display floaters according to claim 1, is characterized in that, described display floater more comprises at least one semiconductor element being positioned at described non-display area, and described semiconductor element is connected to the described first structure unit and described second that changes and changes structure unit.
17. display floaters according to claim 16, is characterized in that, described semiconductor element comprises:
One the 5th conductive layer, to be positioned on described substrate and to be connected with described 3rd conductive layer with described first conductive layer;
One the 6th conductive layer, is connected with described second conductive layer and described 4th conductive layer;
One second semiconductor layer, between described 5th conductive layer and described 6th conductive layer;
At least one fourth hole, is communicated with described 5th conductive layer and described 6th conductive layer; And
At least one fifth hole, is communicated with described 6th conductive layer and described second semiconductor layer.
18. display floaters according to claim 1, is characterized in that, described semiconductor layer is metal-oxide semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520203427.1U CN204596790U (en) | 2015-04-07 | 2015-04-07 | Display floater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520203427.1U CN204596790U (en) | 2015-04-07 | 2015-04-07 | Display floater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204596790U true CN204596790U (en) | 2015-08-26 |
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ID=53932913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520203427.1U Active CN204596790U (en) | 2015-04-07 | 2015-04-07 | Display floater |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204596790U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158848A (en) * | 2015-04-07 | 2016-11-23 | 群创光电股份有限公司 | Display floater |
| CN110534533A (en) * | 2015-10-12 | 2019-12-03 | 群创光电股份有限公司 | Display panel |
-
2015
- 2015-04-07 CN CN201520203427.1U patent/CN204596790U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158848A (en) * | 2015-04-07 | 2016-11-23 | 群创光电股份有限公司 | Display floater |
| CN106158848B (en) * | 2015-04-07 | 2019-03-22 | 群创光电股份有限公司 | Display panel |
| CN110534533A (en) * | 2015-10-12 | 2019-12-03 | 群创光电股份有限公司 | Display panel |
| CN110534533B (en) * | 2015-10-12 | 2022-05-10 | 群创光电股份有限公司 | Display panel |
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