CN204535878U - A kind of copper thermistor film temperature sensor chip - Google Patents
A kind of copper thermistor film temperature sensor chip Download PDFInfo
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- CN204535878U CN204535878U CN201520123643.5U CN201520123643U CN204535878U CN 204535878 U CN204535878 U CN 204535878U CN 201520123643 U CN201520123643 U CN 201520123643U CN 204535878 U CN204535878 U CN 204535878U
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Abstract
The utility model discloses a kind of copper thermistor film temperature sensor chip, comprise substrate, temperature sensor, two battery lead plates, wherein said temperature sensor to be arranged on substrate and to comprise the resistive element of multiple electrical connection, and partial ohmic element forms resistance trimming circuit.Integrated circuit component is deposited by thin film technique and forms; its ingredient has: the copper thermistor thin layer above Seed Layer, Seed Layer and the passivation protection layer on copper thermistor thin layer; the thermal resistor layer of this structure is made a series of thermistor line by semiconductor fabrication and technique and is formed temperature sensor, and temperature sensor is provided with resistance trimming circuit in order to fine adjustment resistance value.This sensor chip have high impedance, thermally-stabilised good, the linearity is high, low cost and other advantages.
Description
Technical field
The utility model relates to a kind of temperature sensor chip, particularly relates to a kind of copper thermistor that uses as the temperature sensor chip of temperature element.
Background technology
Temperature sensor is the sensor experienced temperature and convert usable output signal to, mainly comprises thermal resistance temperature sensor (resistance temperature sensor), thermistor temperature sensor (thermistortemperature sensor), thermocouple temperature sensor (thermocouple temperature sensor) and integrated P-N junction temperature sensor.Along with the progress of technology, infrared radiation sensor, pyroelectric detector, metal-oxide-semiconductor field effect transistor photon infrared eye, fibre optic temperature sensor, have also been obtained increasing application.Although temperature sensor is of a great variety, but respectively there is quality, using maximum is several large class temperature sensor-thermal resistance, temperature-sensitive and thermocouple temperature sensor, their application scenario is slightly distinguished: thermal resistor is made up of monocrystalline, polycrystalline semiconductor material usually, it is to temperature extreme sensitivity, resistance value can produce sudden transformation with temperature, normally nonlinear; Thermocouple temperature sensor is very suitable for high temperature measurement, not good at negative temperature its measurement effect interval on the contrary, and need do preventive measure to cold junction compensation, reference edge temperature control and lead compensation, makes its measuring process very complicated; Thermal resistance temperature sensor resistance value is good linear relationship with temperature, and has good stability, is the most frequently used a kind of temperature detector in middle low-temperature space (-200 DEG C ~ 650 DEG C).
Current thermal resistance temperature sensor uses metal platinum as thermal resistance sensitive material mostly, its major advantage is: the resistance value of metal platinum varies with temperature and changes, basic one-tenth linear dependence, and there is good reappearance and stability, measuring accuracy is high, temperature limit is wide, is the most frequently used a kind of temperature detector in middle low-temperature space (-200-650 DEG C).Another kind of conventional thermal resistance material is nickel, and it has 1.7 times to the temperature-coefficient of electrical resistance of platinum, has higher sensitivity, and therefore when accuracy requirement is not too high, Ni Thormal can replace expensive platinum resistance thermometer sensor.Compared with the above two, the linearity of copper is best, has the temperature-coefficient of electrical resistance higher than platinum.But the defect of copper is also quite obvious: low-resistivity causes sensitivity and lack accuracy, easily oxidized, corrosion etc.Above defect seriously limits its application in temperature detection, does not cause the attention of people for a long time.
Utility model content
For overcoming above defect of the prior art; copper thermistor film temperature sensor chip of the present utility model adopts the thin-film technique of improvement; reduce impurity and defects count in institute's depositing metallic films; substantially increase the resistivity of Copper thin film; in the manufacture process of sensor, add passivation protection layer, make Copper thin film avoid oxidized corrosion, improve durability; remain the advantage of good linearity, there is the advantage of high resistance, thermally-stabilised, low cost.By high-temperature heat treatment in a vacuum, microdefect in Copper thin film is reduced further, and the temperature-coefficient of electrical resistance of the temperature sensitive film of controllable adjustable.
For achieving the above object, the utility model provides a kind of copper thermistor film temperature sensor chip, comprise a substrate, temperature sensor, two battery lead plates, wherein said temperature sensor is arranged on the substrate, described temperature sensor comprises detection resistance and resistance trimming circuit, described detection resistance and resistance trimming circuit are made up of the resistive element of multiple electrical connection respectively, all described resistive elements are coated with an insulating passivation layer, and described two battery lead plates are connected with the resistive element at resistance trimming circuit two ends respectively.
All described resistive elements Film patterningly to be formed by temperature sensitive; described temperature sensitive film comprises a copper thermistor thin layer and is covered in a passivation protection layer of described copper thermistor thin-film surface; wherein said Copper thin film is heat-sensitive material; have nano microcrystalline structure, the length of its crystallite or defect is not more than 500 nanometers.
Further, described temperature sensitive film also comprises a Seed Layer, described Seed Layer is between described substrate and described copper thermistor thin layer, the nanostructured of described Copper thin film for controlling the temperature-coefficient of electrical resistance of temperature sensitive film, and further can be optimized by the annealing process in the selection of the material of described Seed Layer and manufacture process.
Further, the other parts of whole chip except connecting electrode plate are coated with an elastic protective layer.
Preferably, described passivation protection layer is high temperature protection coating, in order to improve the high temperature resistance of described temperature sensor.
Preferably, described passivation protection layer is made up of each type oxide and nitride, is not limited to a certain certain material.
Preferably, the oxide of passivation protection layer comprises aluminium oxide, magnesium oxide, monox, tantalum oxide.
Preferably, the nitride of passivation protection layer comprises titanium nitride, aluminium nitride, tantalum nitride, silicon nitride.
Preferably, described copper thermistor thin layer is Copper thin film or copper alloy thin films, and described copper alloy thin films is CuCr, CuNi, CuSn, CuNiFe or CuNiTi.
Preferably, the shape of described detection resistance is snakelike or spirality, and the shape of described battery lead plate is square, rectangle or circle.
Further, the thickness of described copper thermistor thin layer is 200 ~ 50000 dusts.
Compared with prior art, the utility model has following technique effect:
(1) one-pass film-forming, preparation technology is simple;
(2) compared with same eka-platinium, Ni Thormal temperature sensor, there is the higher linearity;
(3) the metal sensitive material used is ultra-thin, makes temperature sensor chip not only have high-resistance characteristic, and has excellent temperature characterisitic;
(4) copper product can extensively obtain, and compare other metalloid thermal resistance temperature sensor, cost reduces greatly.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the utility model embodiment technology, be briefly described to the accompanying drawing used required in the description of embodiment technology below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of a kind of copper thermistor film temperature sensor chip of the present utility model;
Fig. 2 is resistance trimming circuit diagram of the present utility model;
Fig. 3 is spirality resistance element schematic of the present utility model;
Fig. 4 is serpentine resistive element schematic of the present utility model;
Fig. 5 is the sectional view of a kind of copper thermistor film temperature sensor chip of the present utility model.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the utility model in detail.
Embodiment
Fig. 1 is the structural representation of a kind of copper thermistor film temperature sensor chip of the present utility model.The temperature sensor that this sensor chip comprises substrate 3 and is integrated on substrate 3.Temperature sensor comprises detection resistance 4 and resistance trimming circuit 5, described detection resistance 4 and resistance trimming circuit 5 are connected and composed by multiple resistive element respectively, all described resistive elements are coated with an insulating passivation layer 9, battery lead plate 1,2 is connected with the resistive element at resistance trimming circuit 5 two ends; The other parts of whole chip except connecting electrode plate also deposit an elastic protective layer 11.
All described resistive elements Film patterningly to be formed by temperature sensitive; described temperature sensitive film comprises the copper thermistor thin layer 7 above a Seed Layer 6, Seed Layer and the passivation protection layer 8 on copper thermistor thin layer; wherein; described copper thermistor thin layer 7 is heat-sensitive material; have nano microcrystalline structure, the length of its crystallite or defect is not more than 500 nanometers.
Described copper thermistor thin layer 7 is Copper thin film or copper alloy thin films, described copper alloy thin films is CuCr, CuNi, CuSn, CuNiFe or CuNiTi, the advantage such as space, reduction Film roughness that described copper alloy thin films has raising corrosion resistance, minimizing pressure causes.
See Fig. 3, Fig. 4, the shape of described detection resistance 4 can be snakelike or spirality, and the shape of battery lead plate 1,2 is square, rectangle or circle, but is not limited to above shape.Substrate can be the materials such as silicon, aluminium oxide, sapphire, aluminium nitride, silit, silicon nitride or devitrified glass, is silicon chip in this example.
The preparation method of the copper thermistor film temperature sensor chip shown in Fig. 5 comprises the following steps:
(1) first carry out surface cleaning to substrate 3, substrate 3 deposits one deck Seed Layer 6, its thickness mainly regulates the requirement of temperature-coefficient of electrical resistance according to product, also can, depending on actual product requirement situation.This claims Seed Layer 6 to can be metal oxide or the metal nitrides such as aluminium nitride, titanium nitride such as aluminium oxide, magnesium oxide, titanium dioxide.In the present embodiment, this Seed Layer is magnesium oxide (MgO).
(2) using magnetically controlled sputter method in Seed Layer 6, sputter a layer thickness is that the copper thermistor thin layer 7 of 200-10000 dusts is as heat-sensitive material, and then then deposit one deck passivation protection layer 8, described copper thermistor thin layer 7 is Copper thin film or copper alloy thin films, described copper alloy thin films is CuCr, CuNi, CuSn, CuNiFe or CuNiTi, passivation protection layer 8 is all kinds of metal nitride (titanium nitrides, tantalum nitride, aluminium nitride, silicon nitride etc.) and metal oxide (aluminium oxide, magnesium oxide, monox etc.) material, in the present embodiment, this passivation protection layer is tantalum nitride (TaN).
(3) by above-mentioned post-depositional temperature sensitive film, (temperature sensitive film comprises Seed Layer 6, copper thermistor thin layer 7 and passivation protection layer 8 and heat-treats; thermal treatment is carried out under vacuum conditions; thermal treatment can improve film quality, improves temperature-coefficient of electrical resistance.Heat treated temperature is generally at 150 ~ 600 degrees Celsius, and actual temperature is determined according to the requirement of product.In this example, temperature is 350 degrees Celsius.
(4) by each resistive element measuring for the temperature sensitive Film patterning formation temperature after thermal treatment, graphical formation resistive element is here equal to and defines each function element with photoetching and particle beams etching technics.(5) at the graphical rear resistive element disposed thereon one deck insulating passivation layer 9 formed, insulating passivation layer 9 can be the materials such as aluminium oxide, silicon dioxide or silicon nitride, and in this example, insulating passivation layer material is silicon dioxide.Described insulating passivation layer being windowed, exposing heat-sensitive material for building connecting electrode;
At the passivation layer place of windowing growth electrode 10, the material of this electrode can be the materials such as gold, copper, platinum, nickel, silver, tin and alloy thereof, is gold in this example, for rear road ball wire bonding or directly paster encapsulation.
(6) by the method for laser resistor trimming, the resistance of the resistive element in temperature sensor is adjusted to its setting;
(7) except connecting electrode, whole chip coating deposition one deck elastic protective layer 11, so far completes whole technique.
Below the principle of work of temperature sensor is introduced.
For the temperature sensor shown in Fig. 1, it mainly utilizes the theoretical principle of resistance temperature sensor to carry out measuring tempeature, and namely near Debye temperature, the resistivity of metal is directly proportional to temperature.For copper thermistor, near normal temperature, R
t=R
0[1+AT+BT
2], wherein R
0,r
tbe respectively the resistance of copper resistance when 0 DEG C and T DEG C, A, B are constant, so by measuring R
tjust can draw the value of temperature.
As shown in Figure 2, resistance trimming circuit diagram involved by the utility model is resistance trimming circuit 5 in dashed rectangle.The design resistance of chip can lower than the resistance value of actual requirement, and its difference is regulated by laser resistor trimming.Concrete grammar is: some resistive conductor in intentional interruption or fusing resistance trimming circuit 5, as Fig. 2 cross mark the position that marks, regulate chip-resistance value to setting.In actual design and operating process, the resistive conductor of resistance trimming circuit has different design sizes (length, width) resistance corresponding different respectively, to reach the object of accurate resistance trimming.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (8)
1. a copper thermistor film temperature sensor chip, it is characterized in that, comprise a substrate (3), temperature sensor, two battery lead plates (1, 2), wherein said temperature sensor is arranged on described substrate (3), described temperature sensor comprises detection resistance (4) and resistance trimming circuit (5), described detection resistance (4) and resistance trimming circuit (5) are made up of the resistive element of multiple electrical connection respectively, all described resistive elements are coated with an insulating passivation layer (9), described two battery lead plates (1, 2) be connected with the resistive element at resistance trimming circuit (5) two ends respectively.
2. copper thermistor film temperature sensor chip according to claim 1; it is characterized in that; all described resistive elements Film patterningly to be formed by temperature sensitive; described temperature sensitive film comprises a copper thermistor thin layer (7) and is covered in a passivation protection layer (8) on described copper thermistor thin layer (7) surface; wherein said copper thermistor thin layer (7) is heat-sensitive material; have nano microcrystalline structure, the typical length of its crystallite or defect is not more than 500 nanometers.
3. copper thermistor film temperature sensor chip according to claim 2, it is characterized in that, described temperature sensitive film also comprises a Seed Layer (6), and described Seed Layer (6) is positioned between described substrate (3) and described copper thermistor thin layer (7).
4. copper thermistor film temperature sensor chip according to claim 1, is characterized in that, the shape of described detection resistance (4) is snakelike or spirality, and the shape of described battery lead plate (1) is square, rectangle or circle.
5. copper thermistor film temperature sensor chip according to claim 1, is characterized in that, the other parts of whole described temperature sensor chip except connecting electrode plate are coated with an elastic protective layer (11).
6. according to the copper thermistor film temperature sensor chip in claim 1-5 described in any one, it is characterized in that, described passivation protection layer (8) is the high temperature protection coating of the high temperature resistance in order to improve described temperature sensor,
Described passivation protection layer is metal oxide or metal nitride;
Described metal oxide comprises aluminium oxide, magnesium oxide, monox, tantalum oxide;
Described metal nitride comprises titanium nitride, aluminium nitride, tantalum nitride, silicon nitride.
7. copper thermistor film temperature sensor chip according to claim 2, it is characterized in that, described copper thermistor thin layer (7) is Copper thin film or copper alloy thin films, and described copper alloy thin films is CuCr, CuNi, CuSn, CuNiFe or CuNiTi.
8. the copper thermistor film temperature sensor chip according to claim 2,3 or 7, is characterized in that, the thickness of described copper thermistor thin layer (7) is 200 ~ 50000 dusts.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104807554A (en) * | 2015-03-03 | 2015-07-29 | 江苏多维科技有限公司 | Coppery thermal resistor thin film temperature sensor chip and manufacturing method thereof |
| CN107702821A (en) * | 2017-10-16 | 2018-02-16 | 山东省科学院海洋仪器仪表研究所 | A kind of diamond thin abyssal temperature sensor and preparation method thereof |
| CN108981506A (en) * | 2018-07-26 | 2018-12-11 | 北京机械设备研究所 | A kind of miniature surface-mount type firing resistor and preparation method thereof |
| CN111609947A (en) * | 2020-05-20 | 2020-09-01 | 重庆斯太宝科技有限公司 | High-precision temperature sensor chip circuit structure and resistance adjusting method thereof |
| CN113720487A (en) * | 2021-09-28 | 2021-11-30 | 江西省纳米技术研究院 | Thin film resistor structure, and preparation method and application thereof |
-
2015
- 2015-03-03 CN CN201520123643.5U patent/CN204535878U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104807554A (en) * | 2015-03-03 | 2015-07-29 | 江苏多维科技有限公司 | Coppery thermal resistor thin film temperature sensor chip and manufacturing method thereof |
| WO2016138840A1 (en) * | 2015-03-03 | 2016-09-09 | 江苏多维科技有限公司 | Copper thermal resistance thin film temperature sensor chip, and preparation method therefor |
| US10564049B2 (en) | 2015-03-03 | 2020-02-18 | MultiDimension Technology Co., Ltd. | Copper thermal resistance thin film temperature sensor chip, and preparation method therefor |
| CN107702821A (en) * | 2017-10-16 | 2018-02-16 | 山东省科学院海洋仪器仪表研究所 | A kind of diamond thin abyssal temperature sensor and preparation method thereof |
| CN108981506A (en) * | 2018-07-26 | 2018-12-11 | 北京机械设备研究所 | A kind of miniature surface-mount type firing resistor and preparation method thereof |
| CN111609947A (en) * | 2020-05-20 | 2020-09-01 | 重庆斯太宝科技有限公司 | High-precision temperature sensor chip circuit structure and resistance adjusting method thereof |
| CN113720487A (en) * | 2021-09-28 | 2021-11-30 | 江西省纳米技术研究院 | Thin film resistor structure, and preparation method and application thereof |
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