CN204481057U - A kind of magnetoresistive element with individual layer auxiliary layer - Google Patents
A kind of magnetoresistive element with individual layer auxiliary layer Download PDFInfo
- Publication number
- CN204481057U CN204481057U CN201520092592.4U CN201520092592U CN204481057U CN 204481057 U CN204481057 U CN 204481057U CN 201520092592 U CN201520092592 U CN 201520092592U CN 204481057 U CN204481057 U CN 204481057U
- Authority
- CN
- China
- Prior art keywords
- layer
- magnetic
- magnetic memory
- magnetoresistive element
- described magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The utility model provides a kind of magnetoresistive element with individual layer auxiliary layer, comprises magnetic reference layer, Magnetic Memory layer, tunnel barrier layer, auxiliary layer and protective layer.The direction of magnetization of described magnetic reference layer is constant and magnetic anisotropy is surperficial perpendicular to layer; The direction of magnetization of described Magnetic Memory layer is variable and magnetic anisotropy is surperficial perpendicular to layer, and described Magnetic Memory layer is single or multiple lift structure; Described tunnel barrier layer to be arranged between described Magnetic Memory layer and described magnetic reference layer and adjacent with described magnetic reference layer with described Magnetic Memory layer respectively; Described auxiliary layer is metal level and adjacent with described Magnetic Memory layer, and in described auxiliary layer the electronegativity of metallic element lower than the electronegativity of metallic element in described Magnetic Memory layer; Described protective layer is adjacent with described auxiliary layer.
Description
Technical field
The utility model relates to memory device field, particularly relates to a kind of rectilinear magnetoresistive element.
Background technology
Along with the continuous progress of materialogy, a kind of novel internal memory---magnetic RAM (MRAM, Magnetic Random Access Memory) is attracting the sight of people.The high speed that it has static random access memory (SRAM) reads write capability, and the high integration of dynamic random access memory (DRAM), and substantially can repeat write unlimitedly.This high-speed internal memory has been regarded as the successor of DRAM internal memory.
The design of magnetic RAM is also uncomplicated, but higher to the requirement of material, for general material, it is fainter a kind of effect, the resistance variations that its changes of magnetic field is brought is not remarkable, is difficult to judge natively very small curent change with triode.
MTJ (MTJ, Magnetic Tunneling Junction) be the magnetoresistance effect be made up of insulator or magnetic material, it is across under the voltage effect of insulating barrier, its tunnel current and tunnel resistor depend on the relative orientation of two ferromagnetic layer magnetization, when changing under the effect of this relative orientation outside magnetic field, can observe large tunneling magnetic resistance (TMR).The magnetic random access memory that people utilize the characteristic of MTJ to make, is nonvolatile magnetic RAM (MRAM).MRAM is a kind of New Solid nonvolatile memory, and it has the characteristic of high-speed read-write, Large Copacity, low-power consumption.Ferromagnetism MTJ is generally sandwich structure, and be wherein magnetic memory layer, and it can change the direction of magnetization to record different data; Tunnel barrier layer is insulating barrier; Magnetic reference layer is positioned at the opposite side of insulating barrier, and its direction of magnetization is constant.
Spin transfer torque (STT, Spin Transfer Torque) may be used for the write operation of magnetoresistive element, i.e., when the electric current of spin polarization is by magnetoresistive element, can be changed the direction of magnetization of memory layer by STT.When remembering the magnetic bodies smaller volume of layer, required polarization current also can diminish equally, so just can reach miniaturized and low current simultaneously.
Rectilinear MTJ (PMTJ, Perpendicular Magnetic Tunnel Junctions), in such an embodiment, due to two magnetospheric magnetic anisotropy stronger (not considering shape anisotropy), make its direction of easy axis all perpendicular to layer surface.Under identical condition, the size of device can be done less than planar magnetic tunnel junction (i.e. direction of easy axis in face) device, and it is very little that the magnetic polarization error of direction of easy axis can be done.Therefore, if the material specifically having larger magnetic anisotropy can be found, while maintenance thermal stability, can meet and make device miniaturization and low current requirement.
High performance MTJ element is mainly its feature to have high magnetic resistance (MR, Magnetoresistance) rate, and MR leads=and dR/R, R are the minimum resistance values of MTJ element, and dR is the viewed increased resistance value of magnetic state changing memory layer.For PMTJ element, promote improvement direction that its MR leads mainly to concentrate on and make Magnetic memory layer have better magnetic perpendicular magnetic anisotropy and thermal stability, the existing multiple component structure that is optimized for above-mentioned feature or corresponding technique in prior art, but adjoint problem is simultaneously, due to spin pump effect, the damping coefficient of Magnetic memory layer is caused to become large, no matter be that MRAM is injected in vertical-type or the spin of face inner mold, write current is proportional to damping coefficient, be inversely proportional to spin polarizability, the key therefore reducing write current is to reduce damping coefficient, increase spin polarizability.
Utility model content
For the above-mentioned middle problem needing to take into account MR and lead and reduce damping coefficient simultaneously, the utility model provides a kind of magnetoresistive element structure increasing auxiliary layer on Magnetic memory layer.In the annealing process (common process) of Magnetic memory layer crystal, this auxiliary layer contributes to making Magnetic memory layer obtain better magnetic perpendicular magnetic anisotropy and thermal stability and have very little damping coefficient.
Magnetoresistive element of the present utility model, comprising:
Magnetic reference layer, the direction of magnetization of described magnetic reference layer is constant and magnetic anisotropy is surperficial perpendicular to layer;
Magnetic Memory layer, the direction of magnetization of described Magnetic Memory layer is variable and magnetic anisotropy is surperficial perpendicular to layer, and described Magnetic Memory layer is single or multiple lift structure;
Tunnel barrier layer, described tunnel barrier layer to be arranged between described Magnetic Memory layer and described magnetic reference layer and respectively adjacent with described magnetic reference layer with described Magnetic Memory layer (" adjacent " of layer herein and layer refers to that layer and layer are close to setting, does not initiatively arrange other layer therebetween);
Auxiliary layer, described auxiliary layer is the electronegative metal level of electronegativity lower than metal in described Magnetic Memory layer, and described auxiliary layer is adjacent with described Magnetic Memory layer;
Protective layer, described protective layer is adjacent with described auxiliary layer.
Further, described auxiliary layer is single-layer metal structure, and wherein metal is the one in Ti, V, Ta, Nb, Hf, Zr, W, Mo, Cr, Mg, Al.
Further, described auxiliary layer is single-layer metal alloy structure, and wherein metal alloy is Ti, V, Ta, Nb, Hf, Zr, W, Mo, Cr, Mg or Al alloy.
Further, the thickness of described auxiliary layer is greater than 5nm.
Further, the material of described protective layer is the one in Cu, Ru, Al, Rh, Ag, Au.
Further, described Magnetic Memory layer is the ferromagnetic boron-containing alloy layer of individual layer.
Further, the ferromagnetic boron-containing alloy layer of described individual layer is CoFeB, CoB or FeB, and wherein the molar fraction content of B is preferably between 10%-30%, more preferably 20%.
Further, described Magnetic Memory layer is three-decker adjacent successively, and middle one deck is made up of nonmagnetic substance, and all the other are two-layer is made up of magnetic material.
Further, described tunnel barrier layer is non-magnetic metal oxide or nitride.
Further, described nonmagnetic metal oxide is MgO, ZnO or MgZnO.
The utility model is intended to the magnetoresistive element structure protecting a kind of subsequent annealing (common process) front; make Magnetic Memory layer can significantly improve its magnetic perpendicular magnetic anisotropy and thermal stability when follow-up subsequent annealing technique by increasing auxiliary layer; conventional material is all chosen in the material of auxiliary layer and formation and common process realizes; preparation is simple, is easy to realize.
Be described further below with reference to the technique effect of accompanying drawing to design of the present utility model, concrete structure and generation, to understand the purpose of this utility model, characteristic sum effect fully.
Accompanying drawing explanation
Fig. 1 is the structural representation of a preferred embodiment of magnetoresistive element of the present utility model;
Fig. 2 is the structural representation of magnetoresistive element after subsequent technique process in Fig. 1;
Fig. 3 is the structural representation of another preferred embodiment of magnetoresistive element of the present utility model.
Embodiment
Fig. 1 is the structural representation based on a kind of MTJ element of the present utility model, comprising the hearth electrode 1 be disposed adjacent successively from the bottom to top, basal layer 2, magnetic reference layer 3, tunnel barrier layer 4, Magnetic Memory layer 5, auxiliary layer 6 and protective layer 7.
Magnetic reference layer 3 and Magnetic Memory layer 5 are ferrimagnets, and the direction of magnetization of magnetic reference layer 3 is constant and magnetic anisotropy is surperficial perpendicular to layer, and the direction of magnetization of Magnetic Memory layer 5 is variable and magnetic anisotropy is surperficial perpendicular to layer.The magnetic perpendicular magnetic anisotropy energy of magnetic reference layer 3 is fully greater than the magnetic perpendicular magnetic anisotropy energy of Magnetic Memory layer 5, this can be realized by the adjustment of the material to magnetic reference layer 3, structure and thickness, thus when spin polarized current is by MTJ, can only change the direction of magnetization of the lower Magnetic Memory layer 5 of energy barrier, and the direction of magnetization of magnetic reference layer 3 is unaffected.
Magnetic Memory layer 5 is the ferromagnetic boron-containing alloy layers of individual layer, can be CoFeB, CoB or FeB, and wherein the molar fraction content of B is preferably between 10%-30%.In the present embodiment, the material of Magnetic Memory layer 5 is CoFeB (thickness is about 1.2nm), the wherein molar fraction content 20% of B, and its deposited is amorphous state; The material structure of magnetic reference layer 3 is CoFeB (thickness is about 2nm)/TbCoFe (thickness is about 20nm).Wherein "/" represents sandwich construction, and the material layer on the left side is arranged on the material layer of the right.It should be noted that, in embodiment indication about " on ", the location expression of D score, determine according to the show state of element in accompanying drawing, to be described accompanying drawing better, when the angle or position of observing element change, the location expression of each interlayer also can need to do respective change according to actual conditions.
Tunnel barrier layer 4 is the nonmagnetic insulated metal oxide layer of one deck or nitride, such as MgO, ZnO or MgZnO.In the present embodiment, tunnel barrier layer 4 is the MgO (thickness is about 1nm) of NaCl lattice structure, and its (100) crystal plane be parallel is in substrate.
Auxiliary layer 6 is metal level or metal alloy layers that one deck has bcc or the hcp phase of low electronegativity and low dispersivity, and metal can be Ti, V, Ta, Nb, Hf, Zr, W, Mo, Cr, Mg, Al.The Main Function of auxiliary layer 6 realizes for Magnetic Memory layer 5 or promotes magnetic perpendicular magnetic anisotropy, and wherein the electronegativity of metallic element is lower than the electronegativity of metallic element in Magnetic Memory layer 5.After Magnetic Memory layer 5 carries out thermal annealing, crystal grain structure can be formed, its epitaxial growth plane (100) crystal plane be parallel is in the surface of tunnel barrier layer 4, make Magnetic Memory layer 5 have vertical magnetic anisotropy, the B element meanwhile in Magnetic Memory layer 5 migrates in lower electronegative auxiliary layer 6.Due to spin pump effect, the material contacted with Magnetic Memory layer 5 can cause the damping coefficient of Magnetic Memory layer 5 to become greatly, and auxiliary layer 6 can reduce the damping coefficient of Magnetic Memory layer 5 by reducing spin pump effect.In addition, the thickness of auxiliary layer 6 is enough large, and at least 5nm, this is conducive to it and adsorbs the B element migrated into, thus makes Magnetic Memory layer 5 obtain better epitaxial crystal particle, and such Magnetic Memory layer can have very little damping coefficient.In the present embodiment, the material of auxiliary layer 6 is Ti (thickness is about 10nm).
The material of protective layer 7 at least comprises the one in Cu, Ru, Al, Rh, Ag, Au; in the present embodiment, the material of protective layer 7 is Ru (thickness is about 10nm), and basal layer 2 material structure is Ta (thickness is about 20nm)/Cu (thickness is about 20nm)/Ta (thickness is about 20nm).
Below the subsequent technique of the magnetoresistive element of the present embodiment is described further, better the beneficial effects of the utility model to be described.
Annealing in process (common process) is carried out under high temperature more than 250 DEG C of the magnetoresistive element of the present embodiment, B element in the CoFeB of Magnetic Memory layer 5 diffuses to auxiliary layer 6, TiB2 is formed, this is because the electronegativity of Ti is lower than Co and Fe with Ti wherein; Amorphous CoFeB crystallization is bcc phase CoFe crystal grain simultaneously, and its epitaxial growth plane (100) crystal plane be parallel is in the surface of the MgO of tunnel barrier layer 4.The thickness of the Ti of auxiliary layer 6 is enough to fully absorb enough B element, and CoFe can be made like this extension to become bcc phase lattice structure better.The damping coefficient of typical pure CoFe is approximately 0.003, CoFeB then has 0.01.So just can form the magnetic perpendicular magnetic anisotropy with low resistance in Magnetic Memory layer 5.
After annealing in process; ion beam etching (IBE, Ion Beam Etching) can be adopted to etch and to remove protective layer 7 and part auxiliary layer (Ti of auxiliary layer 6 top section), thus thinner Ti layer 8 can be obtained; be easy to carry out subsequent optical carving technology, as shown in Figure 2.
Fig. 3 is the structural representation based on another kind of MTJ element of the present utility model, be with the difference of above-described embodiment, Magnetic Memory layer 5 have employed three-decker, from top to bottom magnetic layers 5A, non magnetic intermediate part-layer 5B and magnetic layers 5C respectively, material is respectively CoFeB (about 0.8nm), Ta (about 0.3nm), CoFeB (about 0.6nm), preferably, the Fe content of magnetic layers 5C, than the height of magnetic layers 5A layer, so more contributes to improving MR and leads.In addition, when heat-treating MTJ, B atom also can be diffused in non magnetic intermediate part-layer 5B, so more contributes to improving its perpendicular magnetic anisotropic.
More than describe preferred embodiment of the present utility model in detail.Should be appreciated that those of ordinary skill in the art just can make many modifications and variations according to design of the present utility model without the need to creative work.Therefore, all technical staff in the art according to design of the present utility model on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment, all should by the determined protection range of claims.
Claims (10)
1. a magnetoresistive element, comprises
Magnetic reference layer, the direction of magnetization of described magnetic reference layer is constant and magnetic anisotropy is surperficial perpendicular to layer;
Magnetic Memory layer, the direction of magnetization of described Magnetic Memory layer is variable and magnetic anisotropy is surperficial perpendicular to layer, and described Magnetic Memory layer is single or multiple lift structure;
Tunnel barrier layer, described tunnel barrier layer to be arranged between described Magnetic Memory layer and described magnetic reference layer and adjacent with described magnetic reference layer with described Magnetic Memory layer respectively;
It is characterized in that, also comprise
Auxiliary layer, described auxiliary layer is the electronegative metal level of electronegativity lower than metal in described Magnetic Memory layer, and described auxiliary layer is adjacent with described Magnetic Memory layer;
Protective layer, described protective layer is adjacent with described auxiliary layer.
2. magnetoresistive element as claimed in claim 1, it is characterized in that, described auxiliary layer is single-layer metal structure, and wherein metal is the one in Ti, V, Ta, Nb, Hf, Zr, W, Mo, Cr, Mg, Al.
3. magnetoresistive element as claimed in claim 1, it is characterized in that, described auxiliary layer is single-layer metal alloy structure, and wherein metal alloy is Ti, V, Ta, Nb, Hf, Zr, W, Mo, Cr, Mg or Al alloy.
4. magnetoresistive element as claimed in claim 1, it is characterized in that, the thickness of described auxiliary layer is greater than 5nm.
5. magnetoresistive element as claimed in claim 1, it is characterized in that, the material of described protective layer is the one in Cu, Ru, Al, Rh, Ag, Au.
6. magnetoresistive element as claimed in claim 1, it is characterized in that, described Magnetic Memory layer is the ferromagnetic boron-containing alloy layer of individual layer.
7. magnetoresistive element as claimed in claim 6, it is characterized in that, the material of the ferromagnetic boron-containing alloy layer of described individual layer is CoFeB, CoB or FeB.
8. magnetoresistive element as claimed in claim 1, it is characterized in that, described Magnetic Memory layer is three-decker adjacent successively, and middle one deck is made up of nonmagnetic substance, and all the other are two-layer is made up of magnetic material.
9. magnetoresistive element as claimed in claim 1, it is characterized in that, described tunnel barrier layer is non-magnetic metal oxide or nitride.
10. magnetoresistive element as claimed in claim 9, it is characterized in that, described nonmagnetic metal oxide is MgO, ZnO or MgZnO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520092592.4U CN204481057U (en) | 2015-02-09 | 2015-02-09 | A kind of magnetoresistive element with individual layer auxiliary layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520092592.4U CN204481057U (en) | 2015-02-09 | 2015-02-09 | A kind of magnetoresistive element with individual layer auxiliary layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204481057U true CN204481057U (en) | 2015-07-15 |
Family
ID=53636833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520092592.4U Active CN204481057U (en) | 2015-02-09 | 2015-02-09 | A kind of magnetoresistive element with individual layer auxiliary layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204481057U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111542490A (en) * | 2018-12-06 | 2020-08-14 | 桑迪士克科技有限责任公司 | Metal magnetic memory device for low temperature operation and method of operating the same |
-
2015
- 2015-02-09 CN CN201520092592.4U patent/CN204481057U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111542490A (en) * | 2018-12-06 | 2020-08-14 | 桑迪士克科技有限责任公司 | Metal magnetic memory device for low temperature operation and method of operating the same |
| CN111542490B (en) * | 2018-12-06 | 2023-09-26 | 桑迪士克科技有限责任公司 | Metal magnetic memory device for low temperature operation and method of operating the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11930717B2 (en) | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | |
| CN108352447B (en) | Magnetic component with perpendicular magnetic anisotropy that maintains high coercivity after high temperature annealing | |
| EP2873079B1 (en) | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications | |
| EP2820680B1 (en) | Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications | |
| EP2673807B1 (en) | Magnetic element with improved out-of-plane anisotropy for spintronic applications | |
| US9287323B2 (en) | Perpendicular magnetoresistive elements | |
| US10522589B2 (en) | Method of making a magnetoresistive element | |
| US10953319B2 (en) | Spin transfer MRAM element having a voltage bias control | |
| US9368176B2 (en) | Scalable magnetoresistive element | |
| US11563169B2 (en) | Magnetic tunnel junction element and magnetic memory | |
| KR102198034B1 (en) | Method and system for providing magnetic junctions including heusler multilayers | |
| US9362489B1 (en) | Method of making a magnetoresistive element | |
| US10672977B2 (en) | Perpendicular magnetoresistive elements | |
| US20210343934A1 (en) | Composite multi-stack seed layer to improve pma for perpendicular magnetic pinning | |
| US20210159401A1 (en) | Magnetoresistive element having a perpendicular afm structure | |
| CN204481054U (en) | A kind of microminiaturized rectilinear anisotropic magnetoresistance element | |
| CN104868052A (en) | Adjustable vertical magneto-resistor element | |
| CN105633275B (en) | A kind of vertical-type STT-MRAM mnemons and its reading/writing method | |
| US20160260890A1 (en) | Novel perpendicular magnetoresistive elements | |
| CN204481056U (en) | A kind of magnetoresistive element with double-deck auxiliary layer | |
| CN104733606A (en) | Magneto-resistor element with double optimization layers | |
| CN204516804U (en) | A kind of magnetoresistive element with individual layer optimization layer | |
| CN204481057U (en) | A kind of magnetoresistive element with individual layer auxiliary layer | |
| CN204481055U (en) | A kind of magnetoresistive element with multilayer auxiliary layer | |
| CN204481053U (en) | A kind of rectilinear magnetoresistive element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |