CN204481033U - A kind of SnO 2loose structure perovskite photovoltaic cell - Google Patents
A kind of SnO 2loose structure perovskite photovoltaic cell Download PDFInfo
- Publication number
- CN204481033U CN204481033U CN201420832467.8U CN201420832467U CN204481033U CN 204481033 U CN204481033 U CN 204481033U CN 201420832467 U CN201420832467 U CN 201420832467U CN 204481033 U CN204481033 U CN 204481033U
- Authority
- CN
- China
- Prior art keywords
- sno
- perovskite
- photovoltaic cell
- layer
- compacted zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910006404 SnO 2 Inorganic materials 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims description 19
- 230000031700 light absorption Effects 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 23
- 238000002360 preparation method Methods 0.000 abstract description 23
- 239000010408 film Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 239000002253 acid Substances 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 17
- 238000003756 stirring Methods 0.000 description 16
- 239000002202 Polyethylene glycol Substances 0.000 description 13
- 229920001223 polyethylene glycol Polymers 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 239000002243 precursor Substances 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910010413 TiO 2 Inorganic materials 0.000 description 8
- 235000011114 ammonium hydroxide Nutrition 0.000 description 8
- 239000007788 liquid Substances 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 150000002220 fluorenes Chemical class 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The utility model relates to a kind of SnO
2loose structure perovskite photovoltaic cell, belongs to photoelectron material and devices field.This perovskite photovoltaic cell electron transfer layer is the tin ash compacted zone be covered on transparent conductive substrate and the tin ash porous layer be covered on tin ash dense film.This loose structure SnO based on low-temperature growth
2perovskite porous photovoltaic cell achieves the high electricity conversion of 12.58%, higher than with SnO
2compacted zone makes the planar structure perovskite thin film photovoltaic cell of electron transfer layer.SnO
2this oxide acid and alkali-resistance, band gap width is large, low as the decay of battery Window layer ultraviolet, significant to raising device performance stability; Its preparation technology is simple in addition, cost is low, is conducive to large-scale production, has very large commercial application prospect.
Description
Technical field
The utility model relates to a kind of SnO
2the perovskite photovoltaic cell of loose structure, belongs to photoelectron material and devices field.
Background technology
In the utilization of solar energy, by broad development with use photoelectric conversion technique, in corresponding photovoltaic industry in the past 10 years with per year over 30% speed increment, in some time even more than 50% (Nat.Photonics, 2008,2,284).Silicon solar cell technology maturation, stable performance, efficiency is high, occupy the dominant contribution in photovoltaic industry market always, but, its cost of electricity-generating is than the water power of Current commercial change, much higher (the Science of nuclear power and thermoelectricity, 1999, 285, 692), and high energy consumption in its production process and environmental problem also very outstanding, therefore, although silicon solar cell is current photovoltaic market " leader ", but people are to efficiently, low cost, the research and development of the solar cell of environmental protection never stop, as novel organic in the Cenozoic (third generation), inorganic thin film solar cell, dye-sensitized solar cells and perovskite battery (Science, 2014, 345, 542).Be that the third generation solar cell (efficiency reaches 13%) of representative gets the attention with obvious low cost and environmental friendliness characteristic with dye-sensitized cell, but efficiency and first generation silicon solar cell (efficiency reaches 25%) are compared with the second generation solar cell being representative with copper indium gallium selenide film battery (efficiency reaches 19%) and are needed to be improved further.Determine that efficiency of solar cell principal element is just light-absorption layer material.A kind of novel have perovskite (as AMX
3) the organic-inorganic metal halide of structure is (as A=CH
3nH
3, M=Pb, X=I) there is the absorption coefficient of the N719 dyestuff high ten times adopted than traditional dye-sensitized solar cells and cause scientific worker's extensive concern.In 5 years, be that the perovskite battery efficiency of light-absorption layer brings up to rapidly more than 19.3% (Science, 2014,345,6196) from 3.8% with perovskite, higher than amorphous silicon battery, ten big sciences one of are broken through to be chosen as 2013 by Science.The people such as domestic Han Hongwei (Han Hongwei) have prepared a kind of perovskite solar cell of the meso-hole structure without hole transmission layer based on carbon electrode, achieve 12.8% authentication efficiency and more than 1000 hours performances high stability without obviously decay, typography can be adopted, there is huge applications prospect (Science, 2014,345,6194).
Perovskite photovoltaic cell device structure is generally conductive substrates/electron transfer layer/calcium titanium ore bed/hole transmission layer/contact electrode, and therefore, optimization layers of material and interracial contact are the inevitable tasks improving battery performance further.In perovskite solar cell, electron transport layer materials and charge transport thereof are the key factors affecting battery performance.The electron transfer layer of current perovskite battery is generally TiO
2compacted zone (Nature, 2013,501,395), TiO
2compacted zone/TiO
2porous layer (Nature, 2013,499,316) or TiO
2compacted zone/Al
2o
3porous layer (Science, 2012,338,643), ZnO film layer (Nature Photonics, 2013,8,133), SnO
2compacted zone is (a kind of based on SnO
2perovskite thin film photovoltaic cell and preparation method thereof, national inventing patent application number: 201410407708).Traditional preparation TiO
2electron transfer layer (containing fine and close and porous layer) and Al
2o
3porous layer generally adopts spin-coating method, and needs high temperature sintering, and operation is large compared with complicated and energy consumption, in addition, and TiO
2the ultraviolet decay existed can reduce the stability of battery.ZnO had both been dissolved in acid and had also been dissolved in alkali, was a kind of two property oxide, had problems, be not very applicable to commercial Application in long-time stability.SnO
2energy low-temperature growth, technique are simple, very stable in acid or alkali environment, and greater band gap planar structure perovskite that is insensitive to ultraviolet light, that assembled by it battery compares TiO
2compacted zone planar structure perovskite battery performance has had certain raising (a kind of based on SnO
2perovskite thin film photovoltaic cell and preparation method thereof, national inventing patent application number: 201410407708), therefore, optimizes SnO further
2electron transfer layer performance improves SnO
2the vital task of based perovskite battery.
Utility model content
Problem to be solved in the utility model is to provide a kind of perovskite photovoltaic cell with higher conversion efficiency.
The applicant is at SnO
2on the basis of planar structure perovskite battery, add one deck SnO
2porous layer, this porous layer, except having electric transmission function, can also be played a supporting role, and allows perovskite infiltrate wherein, thus plays the effect of more absorption sunlights, this based on porous SnO
2the perovskite photovoltaic cell of structure has higher conversion efficiency and better stability.
The technical solution of the utility model:
A kind of perovskite photovoltaic cell, comprises transparent conductive substrate, electron transfer layer, perovskite light-absorption layer, hole transmission layer and metal electrode; Described electron transfer layer is the tin ash compacted zone be covered on transparent conductive substrate and the tin ash porous layer be covered on tin ash compacted zone.
Described transparent conductive substrate is FTO or ITO.
Described calcium titanium ore bed light-absorption layer CH
3nH
3pbI
3.
Above-mentioned perovskite solar cell, described hole transmission layer is 2 of 68mmol/L, 2', 7,7'-tetra-[N, N-bis-(4-methoxyphenyl) is amino]-9,9'-spiral shell two fluorenes, the mixed solution of the sub-acid amides lithium of bis trifluoromethyl sulfonic acid of 26mmol/L and the 4-tert .-butylpyridine of 55mmol/L.Solvent for use is volume ratio is the chlorobenzene of 10:1 and the mixture of acetonitrile.
Described metal electrode is gold electrode.
Porous SnO provided by the present invention
2the preparation method of perovskite photovoltaic cell, comprises the steps:
(1) first adopt semiconductor technology to clean transparent conductive substrate, dry up with nitrogen for subsequent use;
(2) in transparent conductive substrate, SnO is prepared
2compacted zone;
(3) at SnO
2compacted zone prepares SnO
2porous layer;
(4) at SnO
2perovskite CH prepared by porous layer
3nH
3pbI
3light-absorption layer;
(5) on light-absorption layer, hole transmission layer is prepared;
(6) on hole transmission layer, metal electrode is prepared in hydatogenesis.
In transparent conductive substrate, SnO is prepared described in step (2)
2the method of compacted zone, comprises the steps:
(1) by the SnCl of 0.1mol/L
22H
2o ethanolic solution stirs and obtains SnO in 30 minutes
2colloidal sol;
(2) with sol evenning machine by SnO
2colloidal sol is spin-coated in transparent conductive substrate uniformly;
(3) by good for spin coating SnO
2the conductive substrates of sol layer is annealed 30 minutes at 200 degrees celsius.
Described in step (3) at SnO
2compacted zone prepares SnO
2the method of porous layer, comprises the steps:
(1) by the SnCl of 0.075 ~ 0.6mol/L
22H
2o ethanolic solution to stir 30 minutes or more and obtains precursor liquid;
(2) polyethylene glycol of molecular weight 20000 is added precursor liquid, the mass percent of polyethylene glycol and precursor liquid is 9%;
(3) Qu Latong x-100 is added the precursor liquid containing polyethylene glycol, Qu Latong x-100 is 2.5% with the volume ratio of the precursor liquid containing polyethylene glycol;
(4) ammoniacal liquor of 28wt% concentration is added the precursor liquid containing polyethylene glycol and Qu Latong x-100, the percent by volume 0% to 97.6% of ammoniacal liquor and the precursor liquid containing polyethylene glycol and Qu Latong x-100;
(5) the above-mentioned precursor liquid containing polyethylene glycol, Qu Latong x-100 and ammoniacal liquor is fully stirred within more than 12 hours, obtain SnO
2predecessor;
(6) with sol evenning machine, predecessor is spin-coated on annealed SnO uniformly
2on compacted zone;
(7) product that step (6) obtains is annealed 60 seconds under 400 degrees Celsius.
Described in step (4) at SnO
2perovskite CH prepared by porous layer
3nH
3pbI
3the method of light-absorption layer, comprises the steps:
(1) by the PbCl of 1mol/L
2be dissolved in dimethyl formamide, stir 24 hours under 60 degrees Celsius;
(2) with sol evenning machine by PbCl
2solution is spin-coated on annealed SnO
2porous layer is annealed 30 minutes for 70 degrees Celsius;
(3) spin coating there is PbCl
2sample be placed on the CH of 10mg/L
3nH
3soak 5 minutes in I aqueous isopropanol;
(4) with isopropyl alcohol the 3rd step products therefrom, dry up with nitrogen, anneal 30 minutes for 70 degrees Celsius.
The utility model simple by step, low temperature, low cost method can prepare a kind of high efficiency perovskite battery with loose structure electron transfer layer, and cost is low, and device has good electricity conversion and stability, has and compares SnO
2the efficiency of light absorption that planar structure perovskite battery is higher.
The beneficial effects of the utility model are: 1), low temperature method simple by technique has prepared the SnO with loose structure
2perovskite photovoltaic cell, cost is low; 2) this loose structure SnO
2perovskite battery achieves higher electricity conversion (12.58%), more than SnO
2compacted zone, as the efficiency (9.314%) of the perovskite solar cell of electron transfer layer, has very large application development potentiality; 3) SnO
2this oxide acid and alkali-resistance, much more stable than ZnO, compare TiO
2less ultraviolet decay is there is, so significant in raising device performance stability Deng oxide; 4) preparation technology of this high efficiency calcium volt ore deposit battery device is simple, cost is low, is conducive to large-scale production, has very large commercial application prospect.
Accompanying drawing explanation
Fig. 1 is loose structure SnO
2the structure chart of calcium titanium battery, 1-transparent conductive substrate, the fine and close SnO of 2-
2layer, 3-porous SnO
2with perovskite mixed layer, 4-hole transmission layer, 5-gold electrode.
Fig. 2 is the current density voltage curve figure that embodiment 1 obtains perovskite solar cell.
Fig. 3 is the current density voltage curve figure that embodiment 2 obtains perovskite solar cell.
Fig. 4 is the current density voltage curve figure that embodiment 3 obtains perovskite solar cell.
Fig. 5 is the current density voltage curve figure that embodiment 4 obtains perovskite solar cell).
Fig. 6 is the current density voltage curve figure that embodiment 5 obtains perovskite solar cell.
Fig. 7 is the current density voltage curve figure that embodiment 6 obtains perovskite solar cell.
Fig. 8 is the current density voltage curve figure that embodiment 7 obtains perovskite solar cell.
Fig. 9 is the current density voltage curve figure that embodiment 8 obtains perovskite solar cell.
Embodiment
Embodiment 1:
1) clean.To first FTO Conducting Glass be cleaned, be dried up in test.FTO electro-conductive glass cleaning agent suitable for size is first cleaned up, then uses deionized water rinsing.Then successively with deionized water, acetone, EtOH Sonicate cleaning, finally dry up for subsequent use again with nitrogen.
2) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.The configuration of perovskite solution: by the PbCl of 1mol/L
2be dissolved in dimethyl formamide, stir 24 hours under 60 degrees Celsius.Again with sol evenning machine by PbCl
2solution is spin-coated in FTO Conducting Glass, then 70 degrees Celsius are annealed 30 minutes.Spin coating there is PbCl
2sample be placed on the CH of 10mg/L
3nH
3soak 5 minutes in I aqueous isopropanol; Finally use isopropyl alcohol sample, dry up with nitrogen, anneal 30 minutes for 70 degrees Celsius.
3) hole transmission layer preparation.With sol evenning machine at perovskite CH
3nH
3pbI
3spin coating one deck hole transmission layer solution (2,2', 7 of 68mmol/L on light-absorption layer, 7'-tetra-[N, N-bis-(4-methoxyphenyl) is amino]-9,9'-spiral shell two fluorenes, the mixed solution of the sub-acid amides lithium of bis trifluoromethyl sulfonic acid of 26mmol/L and the 4-tert .-butylpyridine of 55mmol/L.Solvent for use is volume ratio is the chlorobenzene of 10:1 and the mixture of acetonitrile).
4) electrode preparation.The sample of good for spin coating hole transmission layer is placed in vacuum evaporation apparatus and evaporates one deck gold film electrode by thermal evaporation process.
5) test.At AM1.5, active layer effective area is 0.09cm
2condition under battery is tested.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 0.962V, short-circuit current density 11.74mA/cm
2, fill factor, curve factor 0.419, conversion efficiency 4.736%.
Embodiment 2:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.By the SnCl of 0.1mol/L
22H
2o ethanolic solution stirs 30 minutes, then is spin-coated on the FTO electro-conductive glass of wash clean with sol evenning machine by precursor solution; The SnO good by spin coating
2the FTO electro-conductive glass of solution is annealed 30 minutes at 200 degrees celsius.
(3) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.With embodiment 1.
(4) hole transmission layer preparation.With embodiment 1.
(5) electrode preparation.With implementing profit 1.
(6) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 1.073V, short-circuit current density 15.84mA/cm
2, fill factor, curve factor 0.548, conversion efficiency 9.314%.
Embodiment 3:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.With embodiment 2.
(3) SnO
2prepared by porous layer.By 90mg SnCl
22H
2o is dissolved in 4mL ethanolic solution, stirs and obtains SnO in 30 minutes
2colloidal sol; Draw logical x-100 to join above-mentioned colloidal sol the polyethylene glycol of 0.3g molecular weight 20000,100 μ L songs, fully stir and obtain SnO in more than 12 hours
2predecessor;
(4) with sol evenning machine by SnO
2predecessor is spin-coated on annealed SnO
2on compacted zone;
(5) product the 4th step obtained was 500 degrees Celsius of short annealings 60 seconds.
(6) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.With embodiment 1.
(7) hole transmission layer preparation.With embodiment 1.
(8) electrode preparation.With implementing profit 1.
(9) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 0.810V, short-circuit current density 16.02mA/cm
2, fill factor, curve factor 0.475, conversion efficiency 6.159%.
Embodiment 4:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.With embodiment 2.
(3) SnO
2prepared by porous layer.By 90mg SnCl
22H
2o is dissolved in 3mL ethanolic solution, stirs and obtains SnO in 30 minutes
2colloidal sol; Draw logical x-100,1mL ammoniacal liquor (28%) to join above-mentioned colloidal sol the polyethylene glycol of 0.3g molecular weight 20000,100 μ L songs, fully stir and obtain SnO in more than 12 hours
2predecessor;
(4) with sol evenning machine by SnO
2predecessor is spin-coated on annealed SnO
2on compacted zone;
(5) product the 4th step obtained was 500 degrees Celsius of short annealings 60 seconds.
(6) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.With embodiment 1.
(7) hole transmission layer preparation.With embodiment 1.
(8) electrode preparation.With implementing profit 1.
(9) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 1.033V, short-circuit current density 18.14mA/cm
2, fill factor, curve factor 0.552, conversion efficiency 10.35%.
Embodiment 5:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.With embodiment 2.
(3) SnO
2prepared by porous layer.By 90mg SnCl
22H
2o is dissolved in 2mL ethanolic solution, stirs and obtains SnO in 30 minutes
2colloidal sol; Draw logical x-100,2mL ammoniacal liquor (28%) to join above-mentioned colloidal sol the polyethylene glycol of 0.3g molecular weight 20000,100 μ L songs, fully stir and obtain SnO in more than 12 hours
2predecessor;
(4) with sol evenning machine by SnO
2predecessor is spin-coated on annealed SnO
2on compacted zone;
(5) product the 4th step obtained was 500 degrees Celsius of short annealings 60 seconds.
(6) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.With embodiment 1.
(7) hole transmission layer preparation.With embodiment 1.
(8) electrode preparation.With implementing profit 1.
(9) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 1.021V, short-circuit current density 20.14mA/cm
2, fill factor, curve factor 0.612, conversion efficiency 12.58%.
Embodiment 6:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.With embodiment 2.
(3) SnO
2prepared by porous layer.By 90mg SnCl
22H
2o is dissolved in 1mL ethanolic solution, stirs and obtains SnO in 30 minutes
2colloidal sol; Draw logical x-100,3mL ammoniacal liquor (28%) to join above-mentioned colloidal sol the polyethylene glycol of 0.3g molecular weight 20000,100 μ L songs, fully stir and obtain SnO in more than 12 hours
2predecessor;
(4) with sol evenning machine by SnO
2predecessor is spin-coated on annealed SnO
2on compacted zone;
(5) product the 4th step obtained was 500 degrees Celsius of short annealings 60 seconds.
(6) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.With embodiment 1.
(7) hole transmission layer preparation.With embodiment 1.
(8) electrode preparation.With implementing profit 1.
(9) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 1.043V, short-circuit current density 18.94mA/cm
2, fill factor, curve factor 0.579, conversion efficiency 11.21%.
Embodiment 7:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.With embodiment 2.
(3) SnO
2prepared by porous layer.By 90mg SnCl
22H
2o is dissolved in 4mL ammoniacal liquor (28%), draws logical x-100 to join above-mentioned solution the polyethylene glycol of 0.3g molecular weight 20000,100 μ L songs, fully stirs and obtains SnO in more than 12 hours
2colloidal sol;
(4) with sol evenning machine by SnO
2predecessor is spin-coated on annealed SnO
2on compacted zone;
(5) product the 4th step obtained was 500 degrees Celsius of short annealings 60 seconds.
(6) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.By CH
3nH
3i and PbCl
23:1 is dissolved in dimethyl formamide in molar ratio, and stirred at ambient temperature 24 hours is stand-by.Sol evenning machine is spin-coated on solution in FTO Conducting Glass, then anneals 45 minutes under 100 degrees Celsius.
(7) hole transmission layer preparation.With embodiment 1.
(8) electrode preparation.With implementing profit 1.
(9) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 1.021V, short-circuit current density 17.74mA/cm
2, fill factor, curve factor 0.565, conversion efficiency 10.23%.
Embodiment 8:
(1) clean.With embodiment 1.
(2) SnO
2prepared by compacted zone.With embodiment 2.
(3) SnO
2prepared by porous layer.By 450mg SnCl
22H
2o is dissolved in 2mL ethanolic solution, stirs and obtains SnO in 30 minutes
2colloidal sol; Draw logical x-100,2mL ammoniacal liquor (28%) to join above-mentioned colloidal sol the polyethylene glycol of 0.3g molecular weight 20000,100 μ L songs, fully stir and obtain SnO in more than 12 hours
2predecessor;
(4) with sol evenning machine by SnO
2predecessor is spin-coated on annealed SnO
2on compacted zone;
(5) product the 4th step obtained was 500 degrees Celsius of short annealings 60 seconds.
(6) perovskite CH
3nH
3pbI
3prepared by light-absorption layer.With embodiment 1.
(7) hole transmission layer preparation.With embodiment 1.
(8) electrode preparation.With implementing profit 1.
(9) test, with embodiment 1.The photoelectric conversion efficiency parameter obtained is, open circuit voltage 1.053V, short-circuit current density 16.22mA/cm
2, fill factor, curve factor 0.557, conversion efficiency 9.482%.
With loose structure SnO prepared by low temperature method in the present invention
2the electron transfer layer doing perovskite photovoltaic cell achieves very high electricity conversion.This densification adds loose structure SnO
2achieve than compact texture SnO in electron transfer layer perovskite photovoltaic cell
2the efficiency that electron transfer layer planar structure perovskite photovoltaic film battery is higher.This loose structure SnO
2the preparation process of film is simple, raw material environmental protection, and SnO
2material itself has good stability, and the solar cell most importantly prepared has excellent performance, has huge application prospect.
Claims (4)
1. a SnO
2loose structure perovskite photovoltaic cell, comprises transparent conductive substrate, electron transfer layer, perovskite light-absorption layer, hole transmission layer and metal electrode; It is characterized in that, described electron transfer layer is the tin ash compacted zone be covered on transparent conductive substrate and the tin ash porous layer be covered on tin ash compacted zone.
2. loose structure perovskite photovoltaic cell according to claim 1, it is characterized in that, described transparent conductive substrate is FTO or ITO.
3. loose structure perovskite photovoltaic cell according to claim 1, it is characterized in that, described calcium titanium ore bed light-absorption layer is CH
3nH
3pbI
3film.
4. loose structure perovskite photovoltaic cell according to claim 1, it is characterized in that, described metal electrode is gold electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420832467.8U CN204481033U (en) | 2014-12-24 | 2014-12-24 | A kind of SnO 2loose structure perovskite photovoltaic cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420832467.8U CN204481033U (en) | 2014-12-24 | 2014-12-24 | A kind of SnO 2loose structure perovskite photovoltaic cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204481033U true CN204481033U (en) | 2015-07-15 |
Family
ID=53636809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420832467.8U Active CN204481033U (en) | 2014-12-24 | 2014-12-24 | A kind of SnO 2loose structure perovskite photovoltaic cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204481033U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505409A (en) * | 2014-12-24 | 2015-04-08 | 武汉大学 | SnO2 porous structure perovskite photovoltaic cell and preparation method thereof |
| CN108054281A (en) * | 2017-11-24 | 2018-05-18 | 常州大学 | It is a kind of to prepare SnO using cryogenic fluid reaction2The method of film and prepare the method for perovskite solar cell with it |
-
2014
- 2014-12-24 CN CN201420832467.8U patent/CN204481033U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505409A (en) * | 2014-12-24 | 2015-04-08 | 武汉大学 | SnO2 porous structure perovskite photovoltaic cell and preparation method thereof |
| CN104505409B (en) * | 2014-12-24 | 2017-02-22 | 武汉大学 | SnO2 porous structure perovskite photovoltaic cell and preparation method thereof |
| CN108054281A (en) * | 2017-11-24 | 2018-05-18 | 常州大学 | It is a kind of to prepare SnO using cryogenic fluid reaction2The method of film and prepare the method for perovskite solar cell with it |
| CN108054281B (en) * | 2017-11-24 | 2020-03-31 | 常州大学 | SnO prepared by low-temperature solution reaction2Method for preparing thin film and method for preparing perovskite solar cell by using thin film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104505409B (en) | SnO2 porous structure perovskite photovoltaic cell and preparation method thereof | |
| CN104157788B (en) | It is a kind of to be based on SnO2Perovskite thin film photovoltaic cell and preparation method thereof | |
| CN105591030B (en) | A kind of translucent perovskite solar cell and preparation method thereof | |
| CN106784329B (en) | A kind of SnO2 quantum dot electron transfer layer perovskite solar battery and preparation method thereof | |
| Huangfu et al. | Copper iodide as inorganic hole conductor for perovskite solar cells with different thickness of mesoporous layer and hole transport layer | |
| CN105336862A (en) | Integrated stack double-junction perovskite solar cell and preparation method thereof | |
| CN106025085A (en) | Perovskite solar cell based on Spiro-OMeTAD/CuxS composite hole transport layer and preparation method thereof | |
| CN105070836A (en) | Mesoporous perovskite solar cell and preparation method thereof | |
| CN104576932A (en) | Mesoscopic perovskite photovoltaic cell with tin-oxide electron-transporting layer and preparation method thereof | |
| CN103400697A (en) | All-solid-state flexible sensitized solar cell and preparation method thereof | |
| CN104022185A (en) | Perovskite membrane and preparation and application method thereof | |
| CN104733617A (en) | Method for manufacturing high-efficiency perovskite type solar cell through large crystal grain forming | |
| CN112436091B (en) | Novel perovskite solar cell doped with rare earth ions | |
| CN103296211B (en) | Heterojunction solar battery device of organic-two dimensional crystal-inorganic hybridization and preparation method thereof | |
| CN107946466B (en) | Perovskite type solar cell and modification method of PEDOT (polymer doped tin oxide) PSS (patterned sapphire substrate) layer thereof | |
| CN107130256B (en) | Boron doping carbonitride modified titanic oxide complex light electrode and preparation method thereof, application | |
| CN105470399A (en) | Perovskite solar cell based on undoped organic hole transport layer and preparation method | |
| CN106128772B (en) | A kind of preparation method of vulcanized lead quantum dot photovoltaic battery | |
| CN104966763A (en) | Method of improving efficiency of perovskite solar cell | |
| CN204407369U (en) | A kind of tin oxide electron transfer layer is situated between and sees perovskite photovoltaic cell | |
| CN103779102B (en) | Low-temperature in-site builds BiOI/Bi2s3hetero-junction thin-film and flexible optoelectronic chemistry solar cell device | |
| CN104103759A (en) | Fibrous solar battery based on perovskite type organic lead and iodine compound and preparation method thereof | |
| US20130186465A1 (en) | Counter electrode for dye-sensitized solar cell and manufacturing method thereof | |
| CN102324316A (en) | Compound light anode and preparation method thereof | |
| CN103618047B (en) | A kind of environmental protection heavy metal free quantum dot solar cell and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |