CN204480999U - The device of automatic adjustment silicon wafer wool making technique - Google Patents
The device of automatic adjustment silicon wafer wool making technique Download PDFInfo
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- CN204480999U CN204480999U CN201420769704.0U CN201420769704U CN204480999U CN 204480999 U CN204480999 U CN 204480999U CN 201420769704 U CN201420769704 U CN 201420769704U CN 204480999 U CN204480999 U CN 204480999U
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- China
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- silicon wafer
- measurement systems
- thickness measuring
- reflectance measurement
- measuring system
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The utility model discloses a kind of device of automatic adjustment silicon wafer wool making technique, this device is by reflectance measurement systems, silicon wafer thickness measuring system, feedback control system forms, reflectance measurement systems is arranged at the discharging end of etching device, silicon wafer thickness measuring system is arranged at material loading end and the discharging end of etching device, feedback control system respectively with reflectance measurement systems, silicon wafer thickness measuring system and etching device main control computer are connected, the signal that feedback control system collection reflectance measurement systems and silicon wafer thickness measuring system record, after internal algorithm process, assign instruction and give etching device main control computer, the technological parameter of etching device is automatically adjusted.The utility model is applicable to the process for etching of surface structure of solar cell, the utility model device is to the automatic adjustment of silicon wafer wool making technique, efficiently solve the regulation and control problem of technologist to technique, enhance accuracy and the stability of technique, Improving The Quality of Products.
Description
Technical field
The utility model relates to the process for etching field of surface structure of solar cell, particularly a kind of device of automatic adjustment silicon wafer wool making technique.
Background technology
The surface structuration processing procedure of solar battery sheet is a very important step in manufacture of solar cells, has great impact to every technique of cell piece processing procedure below, and to carry out chain type acid making herbs into wool be the method for surface structuring that solar cell is the most frequently used at present.Now on a production line the adjustment of process for etching normally technologist by measuring the Reducing thickness of silicon chip, then according to the result of Reducing thickness, carry out the adjustment of technique, to maintain the stability of technique.There is two problems in this way, and the first, the adjustment carrying out technique according to the result of Reducing thickness is delayed all the time, if problem has appearred in technique, can not regulate in time, so may occur the underproof silicon chip of some making herbs into wool during this; The second, the adjustment result of technologist is not necessarily accurate, and making herbs into wool silicon chip out does not just reach best result yet.Instant invention overcomes the deficiency of existing technique, provide a kind of device of automatic adjustment silicon wafer wool making technique, can automatically adjust to process for etching in real time, maintain the stability of technique, guarantee that making herbs into wool effect reaches best, Improving The Quality of Products.
Summary of the invention
The utility model, in order to overcome the deficiency of existing technique, provides a kind of device of automatic adjustment silicon wafer wool making technique, can automatically adjust to process for etching in real time, maintains the stability of technique, guarantees that making herbs into wool effect reaches best, Improving The Quality of Products.
The utility model in order to the technical scheme solving its technical problem and adopt is: a kind of device of automatic adjustment silicon wafer wool making technique, this device is by reflectance measurement systems, silicon wafer thickness measuring system and feedback control system composition, described reflectance measurement systems is arranged at the discharging end of etching device, described silicon wafer thickness measuring system is arranged at material loading end and the discharging end of etching device, described feedback control system respectively with reflectance measurement systems, silicon wafer thickness measuring system and etching device main control computer are connected, the signal that described feedback control system collection reflectance measurement systems and silicon wafer thickness measuring system record, after internal algorithm process, assign instruction and give etching device main control computer, the technological parameter of etching device is automatically adjusted.
The technological parameter of etching device main control computer to etching device automatically adjusts, as the adjustment of reflectivity, and the adjustment of reduced thickness amount, the adjustment of temperature, the adjustment of transmission speed and the adjustment of fluid infusion coefficient;
As further improvement of the utility model, described reflectance measurement systems is made up of laser reflectivity measuring instrument, the reflectivity of noncontacting measurement silicon chip.
As further improvement of the utility model, described silicon wafer thickness measuring system is made up of capacitance thickness meter, inductance calibrator or resistance calibrator, is arranged on material loading end and the discharging end of etching device, the varied in thickness of noncontacting measurement silicon chip;
As further improvement of the utility model, described feedback control system is made up of programmable logic controller (PLC) or computer.
The beneficial effects of the utility model are: the utility model is applicable to the process for etching of surface structure of solar cell, this utility model device is to the automatic adjustment of silicon wafer wool making technique, efficiently solve the regulation and control problem of technologist to technique, enhance accuracy and the stability of technique, Improving The Quality of Products.
Accompanying drawing explanation
Fig. 1 is that the utility model regulates silicon wafer wool making process unit to be arranged on structural representation on etching device automatically;
Indicate in figure: 1-reflectance measurement systems, 2-silicon wafer thickness measuring system, 3-feedback control system, 4-etching device main control computer, 5-material loading end, 6-discharging end, 7-texturing slot, 8-roller, 9-silicon chip, 10-etching device.
Embodiment
In order to deepen understanding of the present utility model, below in conjunction with embodiment and accompanying drawing, the utility model is described in further detail, and this embodiment, only for explaining the utility model, does not form the restriction to the utility model protection range.
As shown in Figure 1: a kind of device of automatic adjustment silicon wafer wool making technique is arranged on etching device 10, comprise reflectance measurement systems 1, silicon wafer thickness measuring system 2, feedback control system 3, etching device main control computer 4, material loading end 5, discharging end 6, texturing slot 7, roller 8, silicon chip 9.
Reflectance measurement systems 1 is arranged at the discharging end 6 of etching device 10, when silicon chip 9 is through discharging end 6, and the contactless reflectivity recording silicon chip of reflectance measurement systems 1; In this example, the reflectivity of silicon chip is measured by laser reflectivity measuring instrument.
Silicon wafer thickness measuring system 2 is arranged at material loading end 5 and the discharging end 6 of etching device 10; When silicon chip 9 is through material loading end 5 and discharging end 6, silicon wafer thickness measuring system 2 records the change of silicon chip 9 Reducing thickness; In this example, the change of silicon wafer thickness is recorded by capacitance thickness meter.
Feedback control system 3 is connected with reflectance measurement systems 1, silicon wafer thickness measuring system 2 and etching device main control computer 4 respectively; In this example, feedback control system is the computer with internal algorithm function.
Feedback control system 3 collects the signal that reflectance measurement systems 1 and silicon wafer thickness measuring system 2 record, and after internal algorithm process, assigns instruction and gives etching device main control computer 4;
The technological parameter of etching device main control computer 4 pairs of etching devices 10 automatically adjusts, in this example, to the adjustment of reflectivity, and the adjustment of reduced thickness amount, the adjustment of temperature, the adjustment of transmission speed and the adjustment of fluid infusion coefficient;
The foregoing is only the schematic embodiment of the present invention, and be not used to limit scope of the present invention.Any those skilled in the art, the equivalent variations done under the prerequisite not departing from design of the present invention and principle, amendment and combination, all should belong to the scope of protection of the invention.
Claims (4)
1. one kind regulates the device of silicon wafer wool making technique automatically, it is characterized in that: this device is by reflectance measurement systems (1), silicon wafer thickness measuring system (2) and feedback control system (3) composition, described reflectance measurement systems (1) is arranged at the discharging end (6) of etching device (10), described silicon wafer thickness measuring system (2) is arranged at the material loading end (5) of etching device (10) and discharging end (6), described feedback control system (3) respectively with reflectance measurement systems (1), silicon wafer thickness measuring system (2) and etching device main control computer (4) are connected, the signal that described feedback control system (3) collection reflectance measurement systems (1) and silicon wafer thickness measuring system (2) record, after internal algorithm process, assign instruction and give etching device main control computer (4), the technological parameter of etching device (10) is automatically adjusted.
2. the device of automatic adjustment silicon wafer wool making technique according to claim 1, is characterized in that: described reflectance measurement systems (1) is made up of laser reflectivity measuring instrument.
3. the device of automatic adjustment silicon wafer wool making technique according to claim 1, is characterized in that: described silicon wafer thickness measuring system (2) is made up of capacitance thickness meter, inductance calibrator or resistance calibrator.
4. the device of automatic adjustment silicon wafer wool making technique according to claim 1, is characterized in that: described feedback control system (3) is made up of programmable logic controller (PLC) or computer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420769704.0U CN204480999U (en) | 2014-12-10 | 2014-12-10 | The device of automatic adjustment silicon wafer wool making technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420769704.0U CN204480999U (en) | 2014-12-10 | 2014-12-10 | The device of automatic adjustment silicon wafer wool making technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204480999U true CN204480999U (en) | 2015-07-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420769704.0U Withdrawn - After Issue CN204480999U (en) | 2014-12-10 | 2014-12-10 | The device of automatic adjustment silicon wafer wool making technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204480999U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538330A (en) * | 2014-12-10 | 2015-04-22 | 苏州润阳光伏科技有限公司 | Device for automatically adjusting silicon wafer texturing process |
-
2014
- 2014-12-10 CN CN201420769704.0U patent/CN204480999U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538330A (en) * | 2014-12-10 | 2015-04-22 | 苏州润阳光伏科技有限公司 | Device for automatically adjusting silicon wafer texturing process |
| CN104538330B (en) * | 2014-12-10 | 2018-07-20 | 苏州润阳光伏科技有限公司 | Automatically adjust the device of silicon wafer wool making technique |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150715 Effective date of abandoning: 20180720 |
|
| AV01 | Patent right actively abandoned |