CN204465995U - For the driving power of large-power light-emitting diodes - Google Patents
For the driving power of large-power light-emitting diodes Download PDFInfo
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- CN204465995U CN204465995U CN201520184169.7U CN201520184169U CN204465995U CN 204465995 U CN204465995 U CN 204465995U CN 201520184169 U CN201520184169 U CN 201520184169U CN 204465995 U CN204465995 U CN 204465995U
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Abstract
The utility model discloses a kind of driving power for large-power light-emitting diodes, comprising: rectification circuit, the alternating current of input is converted to direct current, and exported by the first output and the second output; Isolating transformer, isolating transformer comprises the first winding, the second winding and secondary winding; High-voltage starting circuit, one end of high-voltage starting circuit is connected with the first output one end with the first winding respectively; Silicon carbide MOSFET, the drain electrode of silicon carbide MOSFET is connected with the other end of the first winding, and the source electrode of silicon carbide MOSFET is by current sampling resistor ground connection; Control and drive circuit, it adopts valley conduction critical conduction mode variable frequency control strategy to control silicon carbide MOSFET; Adjusting control circuit, adjusting control circuit changes the electric current flowing through light-emitting diode according to the dim signal of input, to carry out light modulation to light-emitting diode.This driving power can simplified design, reduces the volume of whole driving power, has volume miniaturization, the advantage that with low cost, reliability is high.
Description
Technical field
The utility model relates to illuminating LED (Light Emitting Diode, light-emitting diode) power supply technique field, particularly a kind of single-stage type inverse-excitation type driving power for large-power light-emitting diodes.
Background technology
The illumination of LED is adopted progressively to apply and replacing traditional illumination due to its environmental protection, long-life and the advantage such as energy-conservation.Driving power is as one of the core component of LED illumination, and play very important effect, its Main Function comprises: 1, AC network converts direct current to and powers to LED; 2, electrical safety isolation; 3, stable supply current is powered to LED; 4, light modulation and Based Intelligent Control are carried out to LED illumination in good time.
Fig. 1 is the circuit diagram of high-power LED illumination isolation drive power supply in traditional two-stage type.As shown in Figure 1, this driving power comprises three partial circuits: 1, input electromagnetism interference (EMI) filter circuit; 2, power factor correction (Power Factor Correction, PFC) booster circuit is with; 3, isolated DC turns direct current constant current output circuit.This circuit topology can realize secured electrical isolation and realize constant current-supplying to LED load, and has higher conversion efficiency and comparatively output ripple and low.But this scheme also has the following disadvantages:
1, switching power circuit is divided into two-stage (comprise Boost boosting power factor correction circuit and isolated DC turns direct current constant current output circuit), and circuit is comparatively complicated;
2, component number is more, affects reliability and the life-span of integral illumination system;
3, the volume of driving power is comparatively large, and cost is higher.
Fig. 2 is the circuit diagram of existing a kind of single-stage type inverse-excitation type LED drive power.As shown in Figure 2, this circuit can realize high power factor and correct (PFC), can be used in the LED drive power scheme of small-power (generally lower than 100 watts).But, if single-stage type circuit application also can have the following disadvantages in high-power LED driving power source scheme:
1, output current can produce larger output two times of power frequencies (120 hertz) ripple, and this low-frequency ripple very easily produces flicker at LED, affects the life-span of LED self;
2, the antisurge impact capacity of single-stage type circuit is poor, is difficult at present meet outdoor lighting standard-required;
3, for great power LED, reverse exciting topological structure efficiency is lower, limits this application of single-stage type circuit on high-power LED driving power source;
4, due to the restriction of silicon (Si) base switching device, switching frequency is lower, thus the volume bringing transformer larger and size.
Utility model content
The utility model is intended to solve one of above-mentioned technical problem at least to a certain extent.
For this reason, the purpose of this utility model is to propose a kind of single-stage type inverse-excitation type driving power for large-power light-emitting diodes based on the high-performance tunable optical of carborundum (Silicon Carbide, SiC).
For achieving the above object, a kind of driving power for large-power light-emitting diodes that the utility model proposes, comprise: rectification circuit, described rectification circuit is used for the alternating current of input to be converted to direct current, and exports described direct current by the first output and the second output; Isolating transformer, described isolating transformer comprises the first winding, the second winding and secondary winding; High-voltage starting circuit, one end of described high-voltage starting circuit is connected with described first output one end with described first winding respectively; Silicon carbide MOSFET, the drain electrode of described silicon carbide MOSFET is connected with the other end of described first winding, and the source electrode of described silicon carbide MOSFET is by current sampling resistor ground connection; Control and drive circuit, described control and drive circuit are connected with the grid of described silicon carbide MOSFET with the other end of described high-voltage starting circuit respectively, and described control and drive circuit adopt valley conduction critical conduction mode variable frequency control strategy to control described silicon carbide MOSFET; And adjusting control circuit, described adjusting control circuit changes the electric current flowing through described light-emitting diode according to the dim signal of input, to carry out light modulation to described light-emitting diode.
According to the driving power for large-power light-emitting diodes that the utility model proposes, switching device in switching circuit adopts silicon carbide MOSFET, there is low switching loss and conduction loss, high avalanche breakdown ability, efficient and high workload switching frequency can be realized, and high workload switching frequency can reduce size and the size of transformer, thus reduce the volume of whole driving power, there is volume miniaturization, with low cost, high reliability.
According to an embodiment of the present utility model, the switching frequency that described silicon carbide MOSFET carries out work is 100 KHz ~ 300 KHz.
According to an embodiment of the present utility model, the dim signal of described input is any one in the simulation dim signal of 0 ~ 10V, impulse width modulation and light adjusting signal or resistor-type dim signal.
According to an embodiment of the present utility model, between the output and described light-emitting diode of described driving power, be also connected with ripple current attenuator circuit, described ripple current attenuator circuit is in order to carry out peak load shifting to reduce low-frequency ripple electric current to the output current of described driving power.
According to an embodiment of the present utility model, described ripple current attenuator circuit specifically comprises: the first resistance of series connection and the first electric capacity, has first node between the first resistance of described series connection and the first electric capacity; Second resistance, one end of described second resistance is connected with described first node; First triode, the base stage of described first triode is connected with the other end of described second resistance, and the emitter of described first triode is connected with described light-emitting diode, and the collector electrode of described first triode is connected with described first resistance.
Wherein, the first resistance of described series connection and the first electric capacity form low-pass filter circuit, and the cut-off frequency of described low-pass filter circuit is less than 120 hertz.
According to an embodiment of the present utility model, described adjusting control circuit comprises dim signal input and constant current mirror circuit, wherein, described constant current mirror circuit is made up of the second triode, the 3rd triode, the second electric capacity, the 3rd resistance, the 4th resistance and the 5th resistance.
Wherein, when the dim signal of described input is described resistor-type dim signal, described constant current mirror circuit changes the reference voltage of electric current loop sampling amplifier linearly according to the resistance value size of described resistor-type dim signal, to be changed the electric current flowing through described light-emitting diode by FEEDBACK CONTROL.
The aspect that the utility model is additional and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present utility model.
Accompanying drawing explanation
The utility model above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the circuit diagram of high-power LED illumination isolation drive power supply in traditional two-stage type;
Fig. 2 is the circuit diagram of existing a kind of single-stage type inverse-excitation type LED drive power;
Fig. 3 is the circuit diagram of the single-stage type inverse-excitation type driving power for large-power light-emitting diodes according to the utility model embodiment;
Fig. 4 is the circuit diagram of the ripple current attenuator circuit according to the utility model embodiment;
Fig. 5 is the circuit diagram of the adjusting control circuit according to the utility model embodiment;
Fig. 6 is the curve synoptic diagram between the efficiency of the LED drive power of single-stage type according to the utility model embodiment and input ac voltage;
Fig. 7 is according to the measured curve schematic diagram between the simulation dimmer voltage of the utility model embodiment and output current;
Fig. 8 is according to the measured curve schematic diagram between the duty ratio of the PWM light modulation of the utility model embodiment and output current;
Fig. 9 is adopting the comparison of wave shape schematic diagram before and after ripple current attenuator circuit according to the output ripple electric current of the utility model embodiment;
Figure 10 is adopting the comparison of wave shape schematic diagram before and after ripple current attenuator circuit according to the output ripple electric current of another embodiment of the utility model;
Figure 11 is the temperature schematic diagram of the 220 watts of driving powers real scene shooting under 150 volts of input full load conditions according to the utility model embodiment; And
Figure 12 is the temperature schematic diagram of the 220 watts of driving powers real scene shooting under 480 volts of input full load conditions according to the utility model embodiment.
Embodiment
Be described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present utility model.Of the present utility model open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the utility model.In addition, the utility model can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the utility model provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, fisrt feature described below second feature it " on " structure can comprise the embodiment that the first and second features are formed as directly contact, also can comprise other feature and be formed in embodiment between the first and second features, such first and second features may not be direct contacts.
In description of the present utility model, it should be noted that, unless otherwise prescribed and limit, term " installation ", " being connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
The single-stage type inverse-excitation type driving power for large-power light-emitting diodes proposed according to the utility model embodiment is described with reference to the accompanying drawings.
Fig. 3 is the circuit diagram of the single-stage type inverse-excitation type driving power for large-power light-emitting diodes according to the utility model embodiment.As shown in Figure 3, this inverse-excitation type single-stage type driving power being used for large-power light-emitting diodes comprises: rectification circuit 10, isolating transformer 20, high-voltage starting circuit 30, silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, MOS (metal-oxide-semiconductor) memory), control and drive circuit 40 and adjusting control circuit 50.
Wherein, rectification circuit 10 is for being converted to direct current by the alternating current of input, and export this direct current by the first output and the second output, isolating transformer 20 comprises the first winding, second winding and secondary winding, one end of high-voltage starting circuit 30 is connected with one end of the first winding with the first output of rectification circuit 10 respectively, the drain electrode of silicon carbide MOSFET is connected with the other end of the first winding, the source electrode of silicon carbide MOSFET is by current sampling resistor ground connection, control and drive circuit 40 are connected with the grid of silicon carbide MOSFET with the other end of high-voltage starting circuit 30 respectively, control and drive circuit 40 adopt valley conduction critical conduction mode variable frequency control strategy to control silicon carbide MOSFET.And adjusting control circuit 50 changes the electric current flowing through LED load according to the dim signal of input, to carry out light modulation to light-emitting diode.
As shown in Figure 3, EMI filter circuit 60 is also connected with between interchange input and the input of rectification circuit 10, and be also connected with ripple current attenuator circuit 70 between the output and light-emitting diode of driving power, ripple current attenuator circuit 70 is in order to carry out peak load shifting to reduce low-frequency ripple electric current to the output current of described driving power.
In embodiment of the present utility model, the silicon carbide MOSFET of what the above-mentioned single-stage type inverse-excitation type driving power for large-power light-emitting diodes adopted is novel third generation semiconductor device 1200 volts, to realize the requirements such as LED drive power high efficiency, miniaturization and high power density.In the utility model embodiment, adopt silicon carbide MOSFET, there is following advantage:
1, low switching loss and conduction loss, can realize efficient and high workload switching frequency, and high workload switching frequency can reduce size and the size of isolating transformer, thus reduce the volume of whole driving power, realize driving power miniaturization;
2, silicon carbide MOSFET has higher avalanche breakdown voltage and avalanche breakdown ability, contributes to single-stage type circuit by extra-high pressure surge test, meets high-power outdoor LED illuminating lamp surge test standard-required;
3,1200 volts of work compression resistance of silicon carbide MOSFET make the single-stage type LED drive power of the utility model embodiment can be operated in wider input voltage range.
Simultaneously, in order to the problem that the driving power output current ripple solving the utility model embodiment is larger, by arranging active low cost ripple current attenuator circuit 70 to reduce output ripple electric current, thus within output two times of power frequencies (120 hertz) ripple can be made to be reduced to 10% of output current.
Further, adjusting control circuit 50 is set in the primary side of isolating transformer, dimming mode that can be compatible different.Wherein, the dim signal of input is any one in the simulation dim signal of 0 ~ 10V, impulse width modulation and light adjusting signal or resistor-type dim signal.
It should be noted that, in embodiment of the present utility model, high-powerly generally refer to that the power of light-emitting diode is greater than 100 watts.
Specifically, the main circuit of the driving power of the utility model embodiment is the single-stage type switch flyback switch circuit adopting silicon carbide MOSFET, wherein control and drive circuit 40 pairs of switching device silicon carbide MOSFETs employing valley conduction critical conduction mode variable frequency control, owing to adopting silicon carbide MOSFET, switching frequency can be improved in 100 KHz to 300 KHz work, the size of isolating transformer can be reduced like this, and realize high power conversion and high power factor correction.That is, silicon carbide MOSFET carries out the switching frequency of work can be 100 KHz ~ 300 KHz.
According to an embodiment of the present utility model, as shown in Figure 4, ripple current attenuator circuit 70 specifically comprises: the first resistance R1 of series connection and the first electric capacity C1, the second resistance R2, the first triode Q1.Wherein, between first resistance R1 of series connection and the first electric capacity C1, there is first node, one end of second resistance R2 is connected with first node, the base stage of the first triode Q1 is connected with the other end of the second resistance R2, the emitter of the first triode Q1 is connected with light-emitting diode, and the collector electrode of the first triode Q1 is connected with the first resistance R1.
Wherein, the first resistance R1 and the first electric capacity C1 of series connection form a low-pass filter circuit, R1 and the C1 resistance-capacitance network i.e. cut-off frequency of this low-pass filter circuit is less than two times of power frequencies (120 hertz), thus leaches output ripple electric current.The effect of the second resistance R2 is the base current of triode Q1 when being limited to output short-circuit.This ripple current attenuator circuit can play the effect of the peak load that to disappear to output current, reduces output low frequency ripple current.
According to an embodiment of the present utility model, as shown in Figure 5, adjusting control circuit 50 comprises dim signal input and constant current mirror circuit, and wherein, constant current mirror circuit is made up of the second triode Q2, the 3rd triode Q3, the second electric capacity C2, the 3rd resistance R3, the 4th resistance R4 and the 5th resistance R5.Dim signal input can be the simulation dim signal of 0V-10V, also can be impulse width modulation and light adjusting signal or resistor-type dim signal.And, when the dim signal inputted is resistor-type dim signal, constant current mirror circuit changes the reference voltage of electric current loop sampling amplifier linearly according to the resistance value size of resistor-type dim signal, to be changed the electric current flowing through light-emitting diode by FEEDBACK CONTROL, and to dimming light-emitting diode.This light modulation input port can detect with LED illumination radiator temperature and be connected, and when radiator temperature is too high time, by regulating the input port impedance of dim signal to change the electric current flowing through LED, and then changes LED luminescent lumen.In addition, dim signal input is connected with common mode reactor L1, and the effect of common mode reactor L1 reduces driving power to exchange light input end mouth common mode noise.Output the 3rd electric capacity C3 in parallel of common mode reactor L1, one end of 3rd electric capacity C3 is connected with the negative electrode of the first diode D1, the other end of the 3rd electric capacity is connected with the anode of voltage-stabiliser tube ZD1, the negative electrode of voltage-stabiliser tube ZD1 is connected with the negative electrode of the first diode D1 by the 6th resistance R6, the anode of the first diode D1 is connected with the emitter of the second triode Q2, the two ends of voltage-stabiliser tube ZD1 are also parallel with the 7th resistance R7, the negative electrode of voltage-stabiliser tube ZD1 is also connected with one end of the 8th resistance R8 simultaneously, the other end of the 8th resistance R8 is by the 9th resistance R9 ground connection, the other end output current ring sampling amplifier reference current Iref of the 8th resistance R8.
In a concrete example of the present utility model, employing 220 watts of LED drive power of technical solutions of the utility model and the driving power of traditional two-stage type scheme are contrasted, and two kinds of LED drive power have identical input and output electrical specification, and power is all 220 watts.Can draw from actual tests, the LED drive power volume of the utility model embodiment reduces 40%, and overall components and parts are fewer than traditional scheme simultaneously, and cost is low, contributes to reliability and improves.
Meanwhile, the LED drive power that 220 watt of 1.05 Ampere currents of this example exports has following high performance characteristics:
1, owing to adopting high withstand voltage 1200 volts of silicon carbide MOSFETs, its single-level circuit can be designed as extremely wide input ac voltage scope, and such as input voltage range can support 150 volts to 480 volts;
2, the LED drive power work of this single-stage type realizes high efficiency, and overall full load efficiency exceeds 90%, and the highest full load efficiency can reach more than 93%, specifically as shown in Figure 6;
3, to sample single-stage type valley conduction critical conduction mode variable frequency control, power factor value under input voltage range is 150 volts to 480 volts conditions all higher than 0.9;
4, adopt the adjusting control circuit of the utility model embodiment can compatible various dimming mode, and realize linearity light adjusting, specifically as shown in Figure 7 and Figure 8, wherein Fig. 7 and Fig. 8 sets forth the actual measurement linearity curve of simulation light modulation and pulse-width modulation (PWM) light modulation, and the frequency of the impulse width modulation and light adjusting of Fig. 8 is 5 KHz;
5, adopt the ripple current attenuator circuit of the utility model embodiment, can effectively reduce output ripple electric current, specifically as shown in Figure 9 and Figure 10, as can be seen from the waveform of Fig. 9 and Figure 10 actual measurement, output current ripple obtains effective attenuation after employing ripple current attenuator circuit, wherein, the output current wave schematic diagram of Fig. 9 to be the first electric capacity C1 be 68 microfarads, the output current wave schematic diagram of Figure 10 to be the first electric capacity C1 be 20 microfarads, and waveform 1 is do not add the current waveform before ripple current attenuator circuit, waveform 2 is for adding the current waveform after ripple current attenuator circuit,
6, require to test by surge standard IEC 61000-4-5, wherein input live wire (Line) to zero line (Neutral) test by positive and negative 4 kilovolts of surge tests, live wire (or zero line) is tested by positive and negative 6 kilovolts of surge tests ground wire (Earth); And
7, as Figure 11 and as shown in figure 12, silicon carbide MOSFET is fully loaded with working temperature and is within 100 degrees Celsius, and test condition does not have air-cooled or encapsulating heat radiation.Wherein, Figure 11 is the temperature schematic diagram of 220 watts of driving powers real scene shooting under 150 volts of full load conditions, and silicon carbide MOSFET temperature is lower than 100 degrees Celsius; Figure 12 is the temperature schematic diagram of 220 watts of driving powers real scene shooting under 480 volts of full load conditions, and silicon carbide MOSFET temperature is lower than 80 degrees Celsius.
According to an example of the present utility model, two rear portions adopting the driving power of the utility model embodiment to be placed in LED illumination lamp after sealant pouring and sealing waterproof, power to LED illumination lamp, and have dimming function.Due to the reduction of this driving power volume and weight, can radiator space be utilized to dispel the heat to LED lamp bead more, thus LED luminescent lumen can be increased.
According to the driving power for large-power light-emitting diodes of the utility model embodiment, switching device in switching circuit adopts silicon carbide MOSFET, there is low switching loss and conduction loss, high avalanche breakdown ability, efficient and high workload switching frequency can be realized and by surge standard testing, and high workload switching frequency can reduce size and the size of transformer, thus reduce the volume of whole driving power, there is volume miniaturization, with low cost, high reliability.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present utility model or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and described embodiment of the present utility model, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present utility model and spirit, scope of the present utility model is by claims and equivalency thereof.
Claims (8)
1. for a driving power for large-power light-emitting diodes, it is characterized in that, comprising:
Rectification circuit, described rectification circuit is used for the alternating current of input to be converted to direct current, and exports described direct current by the first output and the second output;
Isolating transformer, described isolating transformer comprises the first winding, the second winding and secondary winding;
High-voltage starting circuit, one end of described high-voltage starting circuit is connected with described first output one end with described first winding respectively;
Silicon carbide MOSFET, the drain electrode of described silicon carbide MOSFET is connected with the other end of described first winding, and the source electrode of described silicon carbide MOSFET is by current sampling resistor ground connection;
Control and drive circuit, described control and drive circuit are connected with the grid of described silicon carbide MOSFET with the other end of described high-voltage starting circuit respectively, and described control and drive circuit adopt valley conduction critical conduction mode variable frequency control strategy to control described silicon carbide MOSFET; And
Adjusting control circuit, described adjusting control circuit changes the electric current flowing through described light-emitting diode according to the dim signal of input, to carry out light modulation to described light-emitting diode.
2., as claimed in claim 1 for the driving power of large-power light-emitting diodes, it is characterized in that, the switching frequency that described silicon carbide MOSFET carries out work is 100 KHz ~ 300 KHz.
3. as claimed in claim 1 for the driving power of large-power light-emitting diodes, it is characterized in that, the dim signal of described input is any one in the simulation dim signal of 0 ~ 10V, impulse width modulation and light adjusting signal or resistor-type dim signal.
4. the driving power for large-power light-emitting diodes according to any one of claim 1-3, it is characterized in that, between the output and described light-emitting diode of described driving power, be also connected with ripple current attenuator circuit, described ripple current attenuator circuit is in order to carry out peak load shifting to reduce low-frequency ripple electric current to the output current of described driving power.
5., as claimed in claim 4 for the driving power of large-power light-emitting diodes, it is characterized in that, described ripple current attenuator circuit specifically comprises:
First resistance of series connection and the first electric capacity, have first node between the first resistance of described series connection and the first electric capacity;
Second resistance, one end of described second resistance is connected with described first node;
First triode, the base stage of described first triode is connected with the other end of described second resistance, and the emitter of described first triode is connected with described light-emitting diode, and the collector electrode of described first triode is connected with described first resistance.
6. as claimed in claim 5 for the driving power of large-power light-emitting diodes, it is characterized in that, the first resistance of described series connection and the first electric capacity form low-pass filter circuit, and the cut-off frequency of described low-pass filter circuit is less than 120 hertz.
7. as claimed in claim 3 for the driving power of large-power light-emitting diodes, it is characterized in that, described adjusting control circuit comprises dim signal input and constant current mirror circuit, wherein, described constant current mirror circuit is made up of the second triode, the 3rd triode, the second electric capacity, the 3rd resistance, the 4th resistance and the 5th resistance.
8. as claimed in claim 7 for the driving power of large-power light-emitting diodes, it is characterized in that, when the dim signal of described input is described resistor-type dim signal, described constant current mirror circuit changes the reference voltage of electric current loop sampling amplifier linearly according to the resistance value size of described resistor-type dim signal, to be changed the electric current flowing through described light-emitting diode by FEEDBACK CONTROL.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108777133A (en) * | 2018-06-26 | 2018-11-09 | 广州视源电子科技股份有限公司 | A kind of light adjusting circuit, backlight module and liquid crystal display |
| CN110753422A (en) * | 2019-10-19 | 2020-02-04 | 浙江凯耀照明有限责任公司 | Quick start circuit applied to operational amplifier building |
| CN114401569A (en) * | 2022-03-14 | 2022-04-26 | 江苏源微半导体科技有限公司 | Linear constant current circuit and driving method |
-
2015
- 2015-03-30 CN CN201520184169.7U patent/CN204465995U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108777133A (en) * | 2018-06-26 | 2018-11-09 | 广州视源电子科技股份有限公司 | A kind of light adjusting circuit, backlight module and liquid crystal display |
| CN110753422A (en) * | 2019-10-19 | 2020-02-04 | 浙江凯耀照明有限责任公司 | Quick start circuit applied to operational amplifier building |
| CN110753422B (en) * | 2019-10-19 | 2021-12-03 | 浙江凯耀照明有限责任公司 | Quick start circuit applied to operational amplifier building |
| CN114401569A (en) * | 2022-03-14 | 2022-04-26 | 江苏源微半导体科技有限公司 | Linear constant current circuit and driving method |
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