CN204462995U - A kind of plate carries internal memory ruggedized computer platform - Google Patents
A kind of plate carries internal memory ruggedized computer platform Download PDFInfo
- Publication number
- CN204462995U CN204462995U CN201520195279.3U CN201520195279U CN204462995U CN 204462995 U CN204462995 U CN 204462995U CN 201520195279 U CN201520195279 U CN 201520195279U CN 204462995 U CN204462995 U CN 204462995U
- Authority
- CN
- China
- Prior art keywords
- memory
- data
- computer platform
- grain
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
The utility model provides a kind of plate to carry internal memory ruggedized computer platform, and relate to computer realm, its structure comprises mainboard PCB and memory grain, also includes the EEPROM that a slice is used for storing particle information; Memory grain to be directly welded on mainboard PCB and to be connected with CPU; Several store particle in parallel as one group of carry on main memory access, each main memory access hangs over array memory grain, the signal wire of the clock of each group, data-interface, address interface, ranks control line, data mask, ECC data interface is connected in parallel.Under comparatively harsh impact force action, still can keep higher stability, avoid the phenomenon occurring that computer corruption, blue screen maybe cannot start.
Description
Technical field
The utility model relates to computer realm, and specifically a kind of plate carries internal memory ruggedized computer platform.
Background technology
Internal memory is the memory unit on computer motherboard, that CPU links up with it, and store the parts of data with it, deposit the current data that using and program, its physical substance is exactly the integrated circuit that one or more groups possesses data input and output and data storage function.
The way of realization of conventional internal memory is directly be plugged on the internal memory socket of mainboard by memory bar, and this implementation is widely used on business computer.But in military computer, common demands has vibratory impulse requirement, especially has the military computer of particular/special requirement, more strict to vibratory impulse index request.Under the more harsh vibratory impulse effect of stress of interior existence that memory bank form is fixing, very easily produce memory bar and memory bank loose contact, cause internal memory unstable, make computing machine occur often crashing, blue screen or cannot start, start after cannot enter the phenomenons such as operating system.
Summary of the invention
The utility model discloses a kind of plate and carries internal memory ruggedized computer platform.The utility model can be downloaded on mainboard by adopting the internal memory of slot form replace with the direct plate of memory grain, removes the memory bank on mainboard, and is welded direct on mainboard PCB by the memory grain on memory bar and is connected with CPU.
Technical solution adopted in the utility model is:
A kind of plate carries internal memory ruggedized computer platform, comprises mainboard PCB and memory grain, also includes the EEPROM that a slice is used for storing particle information; Memory grain to be directly welded on mainboard PCB and to be connected with CPU; Several store particle in parallel as one group of carry on main memory access, each main memory access hangs over array memory grain, the signal wire of the clock of each group, data-interface, address interface, ranks control line, data mask, ECC data interface is connected in parallel.
Described plate carries internal memory ruggedized computer platform, and EEPROM is connected with south bridge SB710 by I2C bus.
Described plate carries internal memory ruggedized computer platform, using in parallel for the storage particle of 5 16 data-interfaces as one group of carry on main memory access.
Described plate carries internal memory ruggedized computer platform, and the sheet of each main memory access selects CS signal number identical with memory grain group number.
The key link that plate carries main memory circuit design memory grain is carried out plate carry, and be used for storing particle information by a slice EEPROM, in order to arrange CPU Memory Controller Hub, and increases ECC Functional Design.
The utility model is based on Godson 3A processor ruggedized computer platform, needs to select suitable memory grain; By ECC Functional Design, realize data check and error correction.Under comparatively harsh impact force action, still can keep higher stability, avoid the phenomenon occurring that computer corruption, blue screen maybe cannot start.
Accompanying drawing explanation
Fig. 1 is the overall plan block diagram carrying internal memory based on Godson 3A landing slab.
Fig. 2 is first group of memory grain connection layout based on Godson 3A processor memory passage 0.
Fig. 3 be Serial PD connection diagram.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail below.
Plate shown in Fig. 1 carries internal memory overall plan block diagram.In figure, CPU_1, CPU_2 represent main memory access 1, the main memory access 2 of Godson 3A respectively; The main memory access data bit of Godson 3A is 64,8, ECC data position, therefore using in parallel for the storage particle of 5 16 data-interfaces as one group of carry on main memory access; Each main memory access has 4 sheets to select CS signal, and therefore each passage can the above-mentioned memory grain of carry 4 groups; The clock of each group, data-interface, address interface, ranks control line, data mask, ECC data interface equisignal line are connected in parallel; Main memory access decides the memory grain group of reading of a certain moment by control CSn and CKEn.
As shown in Figure 2, signal DQSn_c/t is data strobe signal, and every 8 bit data need one group of such signal; DMn is data mask signal, and every 8 bit data need such signal; S0_n is chip selection signal; DQ [63:0] is 64 bit data signals; CB [7:0] is 8 ECC data signals.Remaining, as address signal, read-write enable signal etc., is shared by one group of 5 memory grain.As shown in the figure, wherein 64 bit data signals are mated in the memory grain parallel connection of D0-D3 tetra-X16; D4 memory grain stores as ECC check code and has only used least-significant byte.
As shown in Figure 3, Serial PD(SPD) be an EEPROM, for storing the information that each stores particle, comprising frequency, bit wide, CL etc., being connected with south bridge SB710 by I2C bus.Computing machine is when electrification reset, and south bridge reads the information inside SPD by I2C, in order to arrange the Memory Controller Hub of CPU, to realize internal memory coupling.
Except the technical characteristic described in instructions, be the known technology of those skilled in the art.
Claims (4)
1. plate carries an internal memory ruggedized computer platform, it is characterized in that, comprises mainboard PCB and memory grain, also includes the EEPROM that a slice is used for storing particle information; Memory grain to be directly welded on mainboard PCB and to be connected with CPU; Several store particle in parallel as one group of carry on main memory access, each main memory access hangs over array memory grain, the signal wire of the clock of each group, data-interface, address interface, ranks control line, data mask, ECC data interface is connected in parallel.
2. plate according to claim 1 carries internal memory ruggedized computer platform, it is characterized in that, EEPROM is connected with south bridge SB710 by I2C bus.
3. plate according to claim 1 carries internal memory ruggedized computer platform, it is characterized in that, using in parallel for the storage particle of 5 16 data-interfaces as one group of carry on main memory access.
4. the plate according to claim 1 or 2 or 3 carries internal memory ruggedized computer platform, it is characterized in that, the sheet of each main memory access selects CS signal number identical with memory grain group number.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520195279.3U CN204462995U (en) | 2015-04-02 | 2015-04-02 | A kind of plate carries internal memory ruggedized computer platform |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520195279.3U CN204462995U (en) | 2015-04-02 | 2015-04-02 | A kind of plate carries internal memory ruggedized computer platform |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204462995U true CN204462995U (en) | 2015-07-08 |
Family
ID=53669855
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201520195279.3U Expired - Fee Related CN204462995U (en) | 2015-04-02 | 2015-04-02 | A kind of plate carries internal memory ruggedized computer platform |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204462995U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105511574A (en) * | 2016-01-27 | 2016-04-20 | 山东超越数控电子有限公司 | VPX mainboard based on Godson processor |
CN108564975A (en) * | 2018-04-27 | 2018-09-21 | 济南浪潮高新科技投资发展有限公司 | A kind of production method of ram disk and ram disk |
CN113791822A (en) * | 2021-11-15 | 2021-12-14 | 沐曦集成电路(上海)有限公司 | Memory access device and method for multiple memory channels and data processing equipment |
-
2015
- 2015-04-02 CN CN201520195279.3U patent/CN204462995U/en not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105511574A (en) * | 2016-01-27 | 2016-04-20 | 山东超越数控电子有限公司 | VPX mainboard based on Godson processor |
CN108564975A (en) * | 2018-04-27 | 2018-09-21 | 济南浪潮高新科技投资发展有限公司 | A kind of production method of ram disk and ram disk |
CN113791822A (en) * | 2021-11-15 | 2021-12-14 | 沐曦集成电路(上海)有限公司 | Memory access device and method for multiple memory channels and data processing equipment |
CN113791822B (en) * | 2021-11-15 | 2022-04-12 | 沐曦集成电路(上海)有限公司 | Memory access device and method for multiple memory channels and data processing equipment |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108320764B (en) | Semiconductor device, memory module and operating method thereof | |
CN107430538B (en) | Dynamic application of ECC based on error type | |
CN101937726B (en) | Fast data eye retraining for a memory | |
CN106463179B (en) | Utilize the methods, devices and systems of Memory Controller processing error in data event | |
US20180210787A1 (en) | Internal error checking and correction (ecc) with extra system bits | |
KR101454090B1 (en) | Systems, methods, and apparatuses for hybrid memory | |
KR101294687B1 (en) | A method and apparatus for interfacing with heterogeneous dual in-line memory modules | |
US8117369B2 (en) | Input-output module for operation in memory module socket and method for extending a memory interface for input-output operations | |
US11157200B2 (en) | Communicating over portions of a communication medium | |
KR20110081809A (en) | Mass data storage system with non-volatile memory modules | |
CN107408019B (en) | Method and apparatus for improving immunity to defects in non-volatile memory | |
JP2005528712A (en) | Transparent ECC memory system | |
US20180276161A1 (en) | PCIe VIRTUAL SWITCHES AND AN OPERATING METHOD THEREOF | |
KR20170059219A (en) | Memory device, memory system and method of verifying repair result of memory device | |
US9460813B2 (en) | Memory system | |
CN111258667A (en) | Self-adaptive configuration method, device, equipment and storage medium of server | |
CN102568603A (en) | Data transmission device, memory control device, and memory system | |
US20120320538A1 (en) | Serial advanced technology attachment dimm | |
CN204462995U (en) | A kind of plate carries internal memory ruggedized computer platform | |
CN105917414B (en) | The management of redundancy in nonvolatile memory | |
US20170103797A1 (en) | Calibration method and device for dynamic random access memory | |
US9984741B2 (en) | System and method of transferring data over available pins | |
CN108780429B (en) | Error handling techniques for high speed I/O data transfers | |
US10579470B1 (en) | Address failure detection for memory devices having inline storage configurations | |
US20160124888A1 (en) | Memory Bus Loading and Conditioning Module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150708 Termination date: 20160402 |
|
CF01 | Termination of patent right due to non-payment of annual fee |