CN204417586U - The production equipment of photovoltaic cell nesa coating - Google Patents
The production equipment of photovoltaic cell nesa coating Download PDFInfo
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- CN204417586U CN204417586U CN201420564682.4U CN201420564682U CN204417586U CN 204417586 U CN204417586 U CN 204417586U CN 201420564682 U CN201420564682 U CN 201420564682U CN 204417586 U CN204417586 U CN 204417586U
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Abstract
Provide a kind of production equipment of photovoltaic cell transparent conductive film, comprise and be located at two cover cvd reactors above the moving belt of hot glass sheet, the reactive gaseous precursors forming thin-film material enters from the entrance of described two cover cvd reactors, wherein said cvd reactor comprises temperature sensor, when the described hot glass surface generation deposition reaction in certain temperature range, thus obtain doped sno_2 fluorine transparent conductive oxide film.Simple according to production equipment technique of the present utility model, suitable gaseous precursors is adopted to deposited doped sno_2 fluorine transparent conductive oxide film (FTO) at the hot glass surface of movement, the FTO nesa coating obtained has the feature of high permeability, high conductivity and self suede structure, applies extremely wide in non-crystalline silicon (a-Si:H) thin-film solar cells.
Description
Technical field
The utility model relates to a kind of production equipment of photovoltaic cell nesa coating, particularly relate to and utilize aumospheric pressure cvd method, hot glass surface deposited oxide tin dope fluorine transparent conductive oxide film (FTO) of movement, this nesa coating is mainly used in non-crystalline silicon (a-Si:H) film too battery electrode.
Background technology
Along with being on the rise of energy dilemma and traditional energy environmental pollution; develop renewable clear energy sources and become one of Major Strategic problem in international coverage; sun power is inexhaustible, nexhaustible clear energy sources; therefore, researches and exploitation sun power becomes the energy strategy decision-making of countries in the world government Sustainable development.Wherein, non-crystalline silicon (a-Si:H) thin-film solar cells is with advantages such as its low costs, easily big area realization, top priority is occupied in thin-film solar cells, and FTO nesa coating has the advantage of high permeability, high conductivity and self suede structure, it is made to be used widely in a-Si:H thin-film solar cells.
CN1962510 Chinese patent sets forth a kind of method utilizing spray pyrolysis to prepare tin oxide transparent conductive film.The method utilizes SnCl
22H
2o and NH
4f obtains the SnO 2 thin film of resistance 20 Ω/, but the method film forming speed is too low, need through repeatedly repeatedly spraying the nesa coating that just can be met requirement; Chinese patent CN101140143 has set forth method and the equipment of ultrasound nebulization method preparing large area transparent conductive film.The method passes through supersonic spraying, static hot glass surface deposited doped sno_2 fluorine nesa coating, rete specific conductivity and transmitance higher, but the method does not relate to the preparation of middle shield, simultaneously, the sample rete that the method obtains is even not and size is less, should not carry out suitability for industrialized production.CN101188149 Chinese patent sets forth a kind of method of the AZO nesa coating utilizing radio-frequency magnetron sputter method to adulterate at glass surface codeposition Ce, obtaining resistivity is 7 ~ 8 × 10-4 Ω cm, in 400 ~ 800nm visible-range, average transmittances reaches the nesa coating of 80 ~ 90%, but the nesa coating that the method obtains itself does not have suede structure, after matte process, just electrode of solar battery need can be applied to; CN1145882 Chinese patent has set forth a kind of mode by chemical vapour deposition on the sheet glass of 630 ~ 640 DEG C or float glass matrix of movement, utilizes tin tetrachloride and water pre-mixing to form single air-flow, the method for deposited oxide tin rete.The reactive material that the method relates to requires at high temperature moment decomposition reaction, wayward, complex process.
Utility model content
The utility model is intended to utilize aumospheric pressure cvd method, adopts suitable gaseous precursors hot glass surface deposited oxide tin dope fluorine transparent conductive oxide film (FTO) of movement.
In order to reach above-mentioned purpose, a kind of production equipment of photovoltaic cell transparent conductive film, comprise and be located at two cover cvd reactors above the moving belt of hot glass sheet, the reactive gaseous precursors forming thin-film material enters from the entrance of described two cover cvd reactors, wherein said cvd reactor comprises temperature sensor, when the described hot glass surface generation deposition reaction in certain temperature range, thus obtain doped sno_2 fluorine transparent conductive oxide film.
In some embodiments, what pass in the entrance of described first cvd reactor is the gaseous precursors of silicon oxide and the mixed gas of carrier gas, or the mixed gas of the gaseous precursors of silicon oxide and other reactant gas and carrier gas.
In some embodiments, what pass in the entrance of described second cvd reactor is the gaseous precursors of stannic oxide and the mixed gas of other reactant gas and carrier gas.
In some embodiments, described carrier gas is helium, the rare gas element of nitrogen and so on.
In some embodiments, the chemical formula of the gaseous precursors of described silicon oxide is R
uo
vsi
m, wherein R is straight or branched or cycloalkyl, u=3 ~ 8, v=0 ~ 4, m=1 ~ 4, and other reactant gas described comprises the gaseous precursors of stannic oxide or other organo-metallic alkoxide of gasification, water vapour, Lewis acid, or triethyl-phosphite.
In some embodiments, the chemical formula of the gaseous precursors of described stannic oxide is R
nsnCl
4-n, wherein R is straight or branched or cycloalkyl, n=0,1 or 2.
In some embodiments, other reactant gas described comprises the gaseous precursors of fluorine, water vapour, low-level chain triacontanol, or ethyl acetate.
In some embodiments, the gaseous precursors of described fluorine comprises trifluoroacetic acid, hydrofluoric acid, phosphorus trifluoride, or fluoridizes.
In some embodiments, the temperature of described hot glass sheet controls within the scope of 400 ~ 700 DEG C.
Simple according to production equipment technique of the present utility model, suitable gaseous precursors is adopted to deposited doped sno_2 fluorine transparent conductive oxide film (FTO) at the hot glass surface of movement, the FTO nesa coating obtained has the feature of high permeability, high conductivity and self suede structure, applies extremely wide in non-crystalline silicon (a-Si:H) thin-film solar cells.
Below in conjunction with accompanying drawing, the description of the utility model purport is described by example, with clear other aspects of the present utility model and advantage.
Accompanying drawing explanation
By reference to the accompanying drawings, by detailed description hereafter, above-mentioned and other feature and advantage of the present utility model more clearly can be understood, wherein:
Fig. 1 is the functional diagram of the production equipment according to the utility model embodiment;
Fig. 2 is the film layer structure schematic diagram of the FTO nesa coating of production equipment according to the utility model embodiment;
Fig. 3 is the schematic diagram of the operation of production equipment according to the utility model embodiment; And
Fig. 4 is the structural representation of non-crystal silicon solar cell unit.
Embodiment
See the accompanying drawing of the utility model specific embodiment, hereafter in more detail the utility model will be described.But the utility model can realize in many different forms, and should not be construed as by the restriction in the embodiment of this proposition.On the contrary, it is abundant and complete open in order to reach for proposing these embodiments, and makes those skilled in the art understand scope of the present utility model completely.
The production equipment of a kind of photovoltaic cell transparent conductive film that the utility model provides, be utilize aumospheric pressure cvd method, adopt suitable gaseous precursors hot glass surface deposited oxide tin dope fluorine transparent conductive oxide film (FTO) of movement.
In the utility model, the main component of nesa coating is SnO 2 thin film, in order to improve the electric conductivity of rete, need in rete, carry out doping and form semi-conductor conductive film, the composition of doping has fluorine, antimony etc., because Fluorin doped nesa coating has higher visible light transmissivity, therefore preferred fluorine is as doped element; Meanwhile, the stannic oxide in the utility model mixes the thickness at least 360nm of fluorine nesa coating, and be preferably not less than 400nm, the upper limit of thickness has no particular limits, and is generally no more than 1200nm.
In the utility model, a middle layer is deposited, the object in this middle layer, on the one hand between glass substrate and top layer SnO 2 thin film, be cause conducting film alkalosis to prevent the alkalimetal ion in glass substrate to be diffused in nesa coating, thus affect specific conductivity and the light transmission of rete; On the other hand, be interference of light striped in order to eliminate rete.
Refer now to Fig. 1, describe the production equipment of the photovoltaic cell transparent conductive film according to the utility model embodiment in detail.A kind of production equipment of photovoltaic cell transparent conductive film as shown in Figure 1, comprise and be located at two cover cvd reactors above the moving belt of hot glass sheet, and by described two entrances that formed of cover cvd reactors, the reactive gaseous precursors forming thin-film material enters from the entrance of described two cover cvd reactors, wherein said cvd reactor comprises temperature sensor, when the described hot glass surface generation deposition reaction in certain temperature range, thus obtain doped sno_2 fluorine transparent conductive oxide film.
There is the described hot glass surface generation deposition reaction of certain temperature, thus obtain doped sno_2 fluorine transparent conductive oxide film.As shown in Figure 3, in plated film section 5, assemble two cover plated film reactors 7, reactor 7 from the height adjustable of glass substrate 9, general 1 ~ 15mm, preferably 4 ~ 8mm.After sheet glass 9 is heated to pre-set temperature in heating zone 4, be transported in plated film section 5 by live rollers 8, the electrodeless frequency conversion of live rollers 8 transfer rate is adjustable, in reactor 7 region, reactant gas precursor is at hot glass substrate 9 surface successively Quick uniform depositing inter-layer and electrically conducting transparent layer film, finally, plate in the glass feeding annealing section 6 of film and carried out cooling annealing, in order to ensure that rete nucleus is fully grown cultivation, the temperature of annealing section need be set in advance in a suitable depth-graded scope.
With reference to figure 2, intermediate layer film 2 is deposited on glass substrate 1, and the main component of this rete is stannic oxide, silicon oxide etc.The suitable thickness of middle film layer is 30 ~ 150nm, preferably 50 ~ 90nm, if rete is too thin, alkalimetal ion shielding effect can not be played, thus affecting the specific conductivity of transparency conducting layer 3, middle layer can not be too thick simultaneously, the too thick visible light transmissivity that can affect electropane.
In the utility model, the chemical formula of the stannic oxide gaseous precursors that aumospheric pressure cvd method deposition of transparent conductive film is used is R
nsnCl
4-n, wherein R is straight or branched or cycloalkyl, n=0,1 or 2; Tin source R
nsnCl
4-ncan be gaseous state, liquid state or solid-state at normal temperatures, if liquid or solid-state, then need to gasify at a certain temperature.Their common trait is to be easier to gasification (referring to liquid or solid-state), and when contacting with glass substrate, under the temperature condition residing for glass-board surface, can carry out thermal chemical reaction rapidly.Conventional as organotins such as inorganic tin or monobutyl-tin-trichloride such as tin tetrachloride.
The chemical formula of the gaseous precursors of silicon oxide is R
uo
vsi
m, wherein R is straight or branched or cycloalkyl, u=3-8, v=0-4, m=1-4.Typical in tetraethoxy (TEOS), silicomethane (SiH
4).
The gaseous precursors of fluorine comprises trifluoroacetic acid, hydrofluoric acid, phosphorus trifluoride, Neutral ammonium fluoride etc.The specific conductivity that can improve FTO nesa coating film is there is in them as doping.Oxygen source in gaseous precursors is oxygen, water, carbonyl compound class (particularly ester) etc.Need to add stablizer in gaseous precursors mixed gas, the existence of stablizer, can prevent mixed gas from undesirable pre-reaction occurring.Stablizer is ester class, carboxylic-acid etc., typical in ethyl acetate.
Fig. 4 shows a-Si:H thin-film solar cells unit (Cell) structural representation utilizing the utility model FTO transparent conducting film glass, and middle layer 11 and FTO transparency conducting layer 12 successively chemical vapour deposition are on the glass substrate 10; Then on FTO transparency conducting layer 12 with the gas such as silane, hydrogen for raw material, adopt plasma reinforced chemical vapour deposition method (PECVD) deposition of amorphous silicon (a-Si:H) photoelectric conversion layer 13, non-crystalline silicon (a-Si:H) layer 13 is by p, i, n tri-layers composition, forms pin structure; Finally hydatogenesis metal conducting layer 14 on non-crystalline silicon (a-Si:H) layer 13, material is thus formed an a-Si:H thin-film solar cells unit.Thus, according to the transparent conductive film that the production equipment of aforementioned photovoltaic cell transparent conductive film is produced, it is characterized in that, described transparent conductive film is applied to non-crystalline silicon (a-Si:H) thin-film solar cells, non-crystalline silicon (a-Si:H) thin-film solar cells contains transparency conducting layer, or photoelectric conversion layer and metal conducting layer.
Hereafter the example according to the production equipment of the utility model embodiment will be described.
In the present embodiment, the temperature of glass substrate is 660 DEG C; Glass substrate is 4mm ultra-clear glasses; Coating wire speed is 252m/hr; First reactor utilized, by tetraethoxy (TEOS), monobutyl-tin-trichloride (MBTC), tricresyl phosphite second fat (TEP), water vapour (H
2o), the gaseous precursor mixture such as nitrogen (molecular fraction of each composition respectively: TEOS 1.2%, MBTC 0.9%, TEP 0.5%, H
2o 1.9%, all the other are nitrogen) guide the glass basis of movement on the surface, cvd silicon oxide, stannic oxide compound middle film layer;
Utilize second reactor by vaporized monobutyl-tin-trichloride (MBTC), trifluoroacetic acid (TFA), water (H
2etc. O) the gaseous precursor mixture made of pre-mixing (molecular fraction of each composition respectively: MBTC 1.6mol%, TFA0.8mol%, H
2o 4.5mol%, all the other are nitrogen) do carrier with nitrogen, be passed on the glass surface of the heat of movement, deposited oxide tin mixes fluorine nesa coating.
After measured, intermediate layer thickness is 83nm, FTO electrically conducting transparent layer thickness is 660nm, and the square resistance of rete is 7.6 Ω/, and electricalresistivityρ is 5.016 × 10
-4Ω/cm, the carrier concentration of rete is n is 7.8 × 10
20cm
3, the visible light transmissivity of FTO transparent conducting film glass is 82%.Therefore known, this FTO nesa coating has good optics, electric property, can be applicable to non-crystalline silicon (a-Si:H) thin-film solar cells completely.
Simple according to production equipment technique of the present utility model, suitable gaseous precursors is adopted to deposited doped sno_2 fluorine transparent conductive oxide film (FTO) at the hot glass surface of movement, the FTO nesa coating obtained has the feature of high permeability, high conductivity and self suede structure, applies extremely wide in non-crystalline silicon (a-Si:H) thin-film solar cells.
More than describe preferred embodiment of the present utility model in detail.Should be appreciated that those of ordinary skill in the art just can make many modifications and variations according to design of the present utility model without the need to creative work.All technician in the art according to design of the present utility model on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment, all should by the determined protection domain of claims.
Claims (9)
1. the production equipment of a photovoltaic cell nesa coating, it is characterized in that, comprise and be located at two cover cvd reactors above the moving belt of hot glass sheet, and by described two entrances that formed of cover cvd reactors, the reactive gaseous precursors forming thin-film material enters from the entrance of described two cover cvd reactors, wherein said cvd reactor comprises temperature sensor, when the described hot glass surface generation deposition reaction in certain temperature range, thus obtain doped sno_2 fluorine transparent conductive oxide film.
2. production equipment according to claim 1, it is characterized in that, what pass in the entrance of described first cvd reactor is the gaseous precursors of silicon oxide and the mixed gas of carrier gas, or the mixed gas of the gaseous precursors of silicon oxide and other reactant gas and carrier gas.
3. production equipment according to claim 1, is characterized in that, what pass in the entrance of described second cvd reactor is the gaseous precursors of stannic oxide and the mixed gas of other reactant gas and carrier gas.
4. the production equipment according to Claims 2 or 3, is characterized in that, described carrier gas is helium, the rare gas element of nitrogen and so on.
5. production equipment according to claim 2, is characterized in that, the chemical formula of the gaseous precursors of described silicon oxide is R
uo
vsi
m, wherein R is straight or branched or cycloalkyl, u=3 ~ 8, v=0 ~ 4, m=1 ~ 4, and other reactant gas described comprises the gaseous precursors of stannic oxide or other organo-metallic alkoxide of gasification, water vapour, Lewis acid, or triethyl-phosphite.
6. production equipment according to claim 5, is characterized in that, the chemical formula of the gaseous precursors of described stannic oxide is R
nsnCl
4-n, wherein R is straight or branched or cycloalkyl, n=0,1 or 2.
7. production equipment according to claim 3, is characterized in that, other reactant gas described comprises the gaseous precursors of fluorine, water vapour, low-level chain triacontanol, or ethyl acetate.
8. production equipment according to claim 7, is characterized in that, the gaseous precursors of described fluorine comprises trifluoroacetic acid, hydrofluoric acid, phosphorus trifluoride, or fluoridizes.
9. production equipment according to claim 1, is characterized in that, the temperature of described hot glass sheet controls within the scope of 400 ~ 700 DEG C.
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| CN201420564682.4U CN204417586U (en) | 2014-09-28 | 2014-09-28 | The production equipment of photovoltaic cell nesa coating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420564682.4U CN204417586U (en) | 2014-09-28 | 2014-09-28 | The production equipment of photovoltaic cell nesa coating |
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| Publication Number | Publication Date |
|---|---|
| CN204417586U true CN204417586U (en) | 2015-06-24 |
Family
ID=53467973
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2014
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