CN204403827U - The LED of low calorie - Google Patents
The LED of low calorie Download PDFInfo
- Publication number
- CN204403827U CN204403827U CN201420817351.7U CN201420817351U CN204403827U CN 204403827 U CN204403827 U CN 204403827U CN 201420817351 U CN201420817351 U CN 201420817351U CN 204403827 U CN204403827 U CN 204403827U
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- Prior art keywords
- led
- low calorie
- metal oxide
- phosphor powder
- layer
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Abstract
The utility model discloses a kind of LED of low calorie, the LED of described low calorie comprises outermost metal oxide layer, the nanometer glue-line in intermediate layer and undermost phosphor powder layer, described metal oxide layer and described phosphor powder layer are sticked together by described nanometer glue-line, and the thickness proportion of described metal oxide layer, nanometer glue-line and phosphor powder layer is 1:1:2.The utility model provides a kind of LED of low calorie, has energy-efficient, shockproof long-life and the durable advantage of low calorie.
Description
Technical field
The utility model relates to a kind of LED of low calorie.
Background technology
LED(Light Emitting Diode), light emitting diode is a kind of can be the solid-state semiconductor devices of visible ray by electric energy conversion, and it directly can be converted into light electricity.The heart of LED is the wafer of a semiconductor, and one end of wafer is attached on a support, and one end is negative pole, and the other end connects the positive pole of power supply, makes whole wafer by epoxy encapsulation.Semiconductor wafer is made up of two parts, and a part is P-type semiconductor, and inside it, occupy an leading position in hole, and the other end is N-type semiconductor, at this side mainly electronics.But time these two kinds of semiconductors couple together, between them, just form a P-N junction.When electric current acts on this wafer by wire time, electronics will be pushed to P district, and in P district, electronics is with hole-recombination, then will send energy with the form of photon, the principle of LED luminescence that Here it is.And the wavelength of light i.e. the color of light, be determined by the material forming P-N junction.
Initial LED is used as the instruction light source of instrument and meter, and various photochromic LED was widely applied in traffic lights and large-area displays screen afterwards, created good economic benefit and social benefit.For the red traffic light of 12 inches, be adopt the long-life originally in the U.S., 140 watts of incandescent lamps of low luminous efficacy are as light source, and it produces the white light of 2000 lumens.After Red lightscreening plate, light loss 90%, the only ruddiness of remaining 200 lumens.And in newly-designed lamp, Lumileds company have employed 18 red LED light source, comprise circuit loss, power consumption 14 watts altogether, can produce same light efficiency.Automobile signal light is also the key areas of LED light source application.
For general illumination, people more need the light source of white.The LED emitted white light for 1998 succeeds in developing.Gallium nitride chip and yttrium-aluminium-garnet (YAG) are packaged together to make by this LED.Gallium nitride chip blue light-emitting (λ p=465nm, Wd=30nm), the YAG fluorescent powder containing Ce3+ that high temperature sintering is made sends sodium yellow after being subject to this blue-light excited and penetrates, peak value 550nLED lamp m.Blue-ray LED substrate is arranged in bowl-type reflection cavity, covers the thin resin layer being mixed with YAG, about 200-500nm.The blue light components that LED substrate sends is absorbed by fluorescent material, the yellow light mix that another part blue light and fluorescent material send, and can obtain obtaining white light.For In gallium nitride/YAG White LED, by changing the chemical composition of YAG fluorescent powder and regulating the thickness of phosphor powder layer, the assorted white light of colour temperature 3500-10000K can be obtained.This method being obtained white light by blue-ray LED, simple structure, with low cost, technology maturity is high, therefore uses at most.
Utility model content
The utility model provides a kind of LED with the low calorie of energy-efficient, shockproof long-life and the durable advantage of low calorie.
The technical solution of the utility model is: a kind of LED of low calorie, the LED of described low calorie comprises outermost metal oxide layer, the nanometer glue-line in intermediate layer and undermost phosphor powder layer, described metal oxide layer and described phosphor powder layer are sticked together by described nanometer glue-line, and the thickness proportion of described metal oxide layer, nanometer glue-line and phosphor powder layer is 1:1:2.
In the utility model preferred embodiment, described metal oxide layer is nano indium tin.
In the utility model preferred embodiment, described phosphor powder layer is gallium nitride.
The LED of a kind of low calorie of the present utility model, has energy-efficient, shockproof long-life and the durable advantage of low calorie.
Accompanying drawing explanation
Accompanying drawing 1 is the perspective view of LED one preferred embodiment of the utility model low calorie.
In accompanying drawing, the mark of each parts is as follows: 1, the superiors, and 2, intermediate layer, 3, orlop.
Detailed description of the invention
Be described in detail below in conjunction with the preferred embodiment of accompanying drawing to utility model, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining made to protection domain of the present utility model.
Wherein, the LED of described low calorie comprises the phosphor powder layer of the metal oxide layer of outermost layer 1, the nanometer glue-line in intermediate layer 2 and orlop 3, described metal oxide layer and described phosphor powder layer are sticked together by described nanometer glue-line, the thickness proportion of described metal oxide layer, nanometer glue-line and phosphor powder layer is 1:1:2, described metal oxide layer is nano indium tin, and described phosphor powder layer is gallium nitride.
Further illustrate, gallium nitride has 1. energy gap large (3.4eV), thermal conductivity high (1.3W/cm-K), then operating temperature is high, and breakdown voltage is high, and capability of resistance to radiation is strong, 2. at the bottom of conduction band at Γ point, and and other energy valleys of conduction band between energy difference large, then not easily produce intervalley scattering, thus very high high field drift velocity (electron drift velocity is not easily saturated) can be obtained, 3. gallium nitride easily and AlN, InN etc. form mixed crystal, various heterojunction structure can be made, under having obtained low temperature, mobility reaches the 2-DEG(of 105cm2/Vs because 2-DEG surface density is higher, effectively shields the factors such as optical phonon scattering, ionized impurity scattering and piezoelectricity scattering), 4. lattice symmetry lower (for hexagonal wurtzite structure or cubic metastable zincblende lattce structure), there is very strong piezoelectricity (non-centrosymmetry is caused) and ferroelectricity (along six side's c-axis spontaneous polarizations): near heterojunction boundary, produce very strong piezoelectric polarization (polarized electric field reaches 2MV/cm) and spontaneous polarization (polarized electric field reaches 3MV/cm), generate the interface charge of very high-density, strong band structure of modulating hetero-junctions, strengthen and the two-dimensional space of 2-DEG is limited, thus the surface density that improve 2-DEG (can reach 1013/cm2 in Al gallium nitride/gallium nitride heterojunction, this is than the high order of magnitude in AlGaAs/GaAs hetero-junctions), this to devices function highly significant.In a word, as a whole, the advantage of gallium nitride compensate for its shortcoming, particularly by the effect of hetero-junctions, it effectively transports performance not second to GaAs, and the effect (in microwave output power density) making microwave power device also often will be much better than all semi-conducting materials existing.
Further illustrating, the main characteristic of tin indium oxide is the conduction of its electricity and optically transparent combination.But, need in thin film deposition to make compromise, because high concentration electric charge carrier will increase the electrical conductivity of material, but its transparency can be reduced.As nano indium tin metal oxide, there is good electric conductivity and the transparency, harmful electron radiation can be cut off, ultraviolet and far infrared.Therefore, be sprayed on glass, after in plastics and electronic display, while enhancing electric conductivity and the transparency, cut off harmful electron radiation and ultraviolet, infrared, ito thin film and indium tin oxide transparent conductive semiconductor film, have two performance target resistance rates and light transmittance usually.The utility model provides a kind of LED of low calorie, has energy-efficient, shockproof long-life and the durable advantage of low calorie.
Detailed description of the invention of the present utility model; but protection domain of the present utility model is not limited thereto; any those of ordinary skill in the art are in the technical scope disclosed by the utility model; the change can expected without creative work or replacement, all should be encompassed within protection domain of the present utility model.Therefore, the protection domain that protection domain of the present utility model should limit with claims is as the criterion.
Claims (3)
1. the LED of a low calorie, it is characterized in that: the LED of described low calorie comprises outermost metal oxide layer, the nanometer glue-line in intermediate layer and undermost phosphor powder layer, described metal oxide layer and described phosphor powder layer are sticked together by described nanometer glue-line, and the thickness proportion of described metal oxide layer, nanometer glue-line and phosphor powder layer is 1:1:2.
2. the LED of low calorie according to claim 1, is characterized in that: described metal oxide layer is nano indium tin.
3. the LED of low calorie according to claim 1, is characterized in that: described phosphor powder layer is gallium nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420817351.7U CN204403827U (en) | 2014-12-22 | 2014-12-22 | The LED of low calorie |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420817351.7U CN204403827U (en) | 2014-12-22 | 2014-12-22 | The LED of low calorie |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204403827U true CN204403827U (en) | 2015-06-17 |
Family
ID=53427682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420817351.7U Expired - Fee Related CN204403827U (en) | 2014-12-22 | 2014-12-22 | The LED of low calorie |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204403827U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104501010A (en) * | 2014-12-22 | 2015-04-08 | 常熟史美特节能照明技术有限公司 | Low-heat LED lamp |
-
2014
- 2014-12-22 CN CN201420817351.7U patent/CN204403827U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104501010A (en) * | 2014-12-22 | 2015-04-08 | 常熟史美特节能照明技术有限公司 | Low-heat LED lamp |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150617 Termination date: 20151222 |
|
| EXPY | Termination of patent right or utility model |