CN204349202U - Wide temperature low noise frequency-multiplication solid state laser - Google Patents

Wide temperature low noise frequency-multiplication solid state laser Download PDF

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CN204349202U
CN204349202U CN201520032894.2U CN201520032894U CN204349202U CN 204349202 U CN204349202 U CN 204349202U CN 201520032894 U CN201520032894 U CN 201520032894U CN 204349202 U CN204349202 U CN 204349202U
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crystal
low noise
laser
solid state
wide temperature
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王艳丽
谭浩
黄弋
李大汕
张哨峰
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Fuzhou Photop Qptics Co ltd
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SHANGHAI GAOYI LASER TECHNOLOGY Co Ltd
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Abstract

本实用新型涉及一种宽温低噪声倍频固体激光器,属于激光技术领域。一种宽温低噪声倍频固体激光器,包括半导体激光器和该半导体激光器发出的泵浦光方向同光轴的依次设置的光学耦合系统、体光栅和激光谐振腔;所述激光谐振腔由激光增益介质晶体、非线性倍频晶体和双折射晶体组成。本实用新型中,使用了体光栅锁波长,使半导体激光器的波长稳定在晶体的吸收峰处且线宽压窄,从而提高激光晶体内吸收深度的稳定性,使得激光谐振腔内纵模稳定度提高,进而扩展低噪声的温度范围。

The utility model relates to a wide temperature and low noise frequency doubling solid-state laser, which belongs to the technical field of lasers. A wide-temperature low-noise frequency-doubled solid-state laser, comprising a semiconductor laser and an optical coupling system, a volume grating and a laser resonator arranged in sequence with the direction of the pumping light emitted by the semiconductor laser on the same optical axis; the laser resonator is controlled by laser gain It is composed of dielectric crystal, nonlinear frequency doubling crystal and birefringent crystal. In the utility model, a volume grating is used to lock the wavelength, so that the wavelength of the semiconductor laser is stabilized at the absorption peak of the crystal and the line width is narrowed, thereby improving the stability of the absorption depth in the laser crystal and making the longitudinal mode stability in the laser resonator improve, thereby extending the low-noise temperature range.

Description

宽温低噪声倍频固体激光器Wide temperature low noise frequency doubled solid-state laser

技术领域technical field

本实用新型涉及一种激光器,特别涉及一种宽温低噪声倍频固体激光器。The utility model relates to a laser, in particular to a frequency-multiplied solid laser with wide temperature and low noise.

背景技术Background technique

目前,腔内倍频的可见波段的激光器是通过泵浦Nd:YVO4或者Nd:YAG收发射红外波段的激光,再经过非线性晶体如KTP,产生可见激光。我公司公开的腔内倍频激光器,包括泵浦源和谐振腔,泵浦源是未锁波长的普通半导体激光器,谐振腔前端面镀膜形成前腔镜,谐振腔后端镀膜形成后腔镜,谐振腔内包括激光增益介质和非线性倍频晶体,另将双折射晶体加工成基频光和倍频光的偏振状态,以实现各种不同性能的激光器。各元件之间通过胶合或者光胶结合到一起。该产品的输出功率对温度具有较高的稳定性且具有低噪声、高偏振性输出,并且已经实现了商品化。At present, the intracavity frequency doubling laser in the visible band is used to pump Nd:YVO4 or Nd:YAG to receive and emit laser in the infrared band, and then pass through a nonlinear crystal such as KTP to generate visible laser light. The intracavity frequency-doubling laser disclosed by our company includes a pump source and a resonant cavity. The pump source is an ordinary semiconductor laser with an unlocked wavelength. The front end of the resonator is coated to form a front cavity mirror, and the rear end of the resonator is coated to form a rear cavity mirror. The resonant cavity includes a laser gain medium and a nonlinear frequency doubling crystal, and the birefringent crystal is processed into the polarization state of the fundamental frequency light and the frequency doubling light to realize various lasers with different performances. The components are bonded together by gluing or optical glue. This product has high output power stability against temperature, low noise, and highly polarized output, and it has already been commercialized.

但是,目前该产品的缺点是由于激光晶体吸收带宽较窄且比较锐,吸收效率较低,而泵浦半导体激光器在正常自由运转时输出光束的光谱宽度较宽约为1-2nm,中心波长分别随温度产生大约0.24nm/℃的漂移和随电流产生大约0.07nm/mA的漂移。这就使得在变温或者变电流时,不同状态下输出功率和波长的稳定性会较差,从而影响到腔内的纵模稳定性,进而影响激光器的噪声性能。However, the disadvantage of this product at present is that the laser crystal absorption bandwidth is narrow and sharp, and the absorption efficiency is low, while the spectral width of the output beam of the pump semiconductor laser is about 1-2nm when it is in normal free operation, and the central wavelength is respectively There is a drift of about 0.24 nm/°C with temperature and a drift of about 0.07 nm/mA with current. This makes the stability of the output power and wavelength in different states will be poor when the temperature or current is changed, which will affect the stability of the longitudinal mode in the cavity, and then affect the noise performance of the laser.

实用新型内容Utility model content

本实用新型的目的在于针对上述问题,提供了一种宽温低噪声倍频固体激光器,其腔内的纵模稳定性好,噪声低。The purpose of the utility model is to solve the above problems and provide a wide temperature and low noise frequency doubling solid-state laser, the longitudinal mode in the cavity has good stability and low noise.

本实用新型的目的是这样实现的:The purpose of this utility model is achieved in that:

一种宽温低噪声倍频固体激光器,其特征在于,包括激光泵浦系统和激光谐振腔;所述激光泵浦系统包括半导体激光器以及与该半导体激光器发出的泵浦光方向同光轴的依次设置的光学耦合系统、体光栅和聚焦光学系统;所述激光谐振腔由激光增益介质晶体、非线性倍频晶体和双折射晶体组成。A wide-temperature low-noise frequency-multiplied solid-state laser is characterized in that it includes a laser pumping system and a laser resonator; the laser pumping system includes a semiconductor laser and sequentially on the same optical axis as the pumping light emitted by the semiconductor laser. An optical coupling system, a volume grating and a focusing optical system are set; the laser resonant cavity is composed of a laser gain medium crystal, a nonlinear frequency doubling crystal and a birefringent crystal.

其中,所述半导体激光器发射的激光的波长范围为800nm~1000nm。Wherein, the wavelength range of the laser light emitted by the semiconductor laser is 800nm-1000nm.

其中,所述光学耦合系统为单个光学透镜或者光学透镜组。Wherein, the optical coupling system is a single optical lens or an optical lens group.

其中,所述体光栅是体布拉格光栅。Wherein, the volume grating is a volume Bragg grating.

其中,所述的体光栅的衍射效率为1%-50%。Wherein, the diffraction efficiency of the volume grating is 1%-50%.

其中,所述半导体激光器的输出光束垂直或者以小于90°的倾斜角入射到体光栅上。Wherein, the output beam of the semiconductor laser is incident on the volume grating vertically or at an inclination angle smaller than 90°.

其中,所述光学耦合系统、体光栅和聚焦光学系统上均镀有增透膜。Wherein, the optical coupling system, the volume grating and the focusing optical system are coated with an anti-reflection film.

其中,所述激光增益介质晶体为Nd:YVO4晶体;所述非线性倍频晶体为KTP晶体;所述双折射晶体是基频光的1/4波片或者1/8波片,或者所述双折射晶体是倍频光的1/2波片或者全波片。Wherein, the laser gain medium crystal is Nd:YVO4 crystal; the nonlinear frequency doubling crystal is KTP crystal; the birefringent crystal is a 1/4 wave plate or 1/8 wave plate of fundamental frequency light, or the Birefringent crystals are 1/2 wave plates or full wave plates for frequency doubled light.

其中,所述激光增益介质晶体、非线性倍频晶体和双折射晶体分别镀有前腔镜膜、增透膜和后腔镜膜。Wherein, the laser gain medium crystal, the nonlinear frequency doubling crystal and the birefringent crystal are respectively coated with a front cavity mirror film, an anti-reflection film and a rear cavity mirror film.

其中,所述激光增益介质晶体、非线性倍频晶体和双折射晶体之间分别通过胶合或者光胶粘合。Wherein, the laser gain medium crystal, the nonlinear frequency doubling crystal and the birefringent crystal are respectively bonded by glue or optical glue.

本实用新型的有益效果为:本激光器中,使用了体光栅锁波长,使半导体激光器的波长稳定在晶体的吸收峰处且线宽压窄,从而提高激光晶体内吸收深度的稳定性,使得激光谐振腔内纵模稳定度提高,进而扩展低噪声的温度范围。The beneficial effects of the utility model are: in the laser, the volume grating is used to lock the wavelength, so that the wavelength of the semiconductor laser is stabilized at the absorption peak of the crystal and the line width is narrowed, thereby improving the stability of the absorption depth in the laser crystal, making the laser The stability of the longitudinal mode in the resonator is improved, thereby expanding the temperature range of low noise.

附图说明Description of drawings

图1本实用新型的结构示意图。Fig. 1 is the structural representation of the utility model.

具体实施方式Detailed ways

下面结合具体实施例和附图,进一步阐述本实用新型。Below in conjunction with specific embodiment and accompanying drawing, further elaborate the utility model.

如图1所示,一种宽温低噪声倍频固体激光器,包括激光泵浦系统1和激光谐振腔2。As shown in FIG. 1 , a wide-temperature low-noise frequency-doubled solid-state laser includes a laser pumping system 1 and a laser resonator 2 .

激光泵浦系统1包括半导体激光器11以及与该半导体激光器11发出的泵浦光方向同光轴的依次设置的光学耦合系统12、体光栅13和聚焦光学系统14。其中,半导体激光器11发射的激光的波长范围为800nm~1000nm;光学耦合系统12可以是单个光学透镜或者光学透镜组;体光栅13具体是衍射效率为1%-50%的体布拉格光栅。半导体激光器11的输出光束垂直或者以小于90°的倾斜角入射到体光栅13上。光学耦合系统12、体光栅13和聚焦光学系统14上均镀有增透膜。The laser pumping system 1 includes a semiconductor laser 11 and an optical coupling system 12 , a volume grating 13 and a focusing optical system 14 arranged in sequence on the same optical axis as the direction of the pump light emitted by the semiconductor laser 11 . Wherein, the wavelength range of the laser light emitted by the semiconductor laser 11 is 800nm-1000nm; the optical coupling system 12 can be a single optical lens or an optical lens group; the volume grating 13 is specifically a volume Bragg grating with a diffraction efficiency of 1%-50%. The output beam of the semiconductor laser 11 is incident on the volume grating 13 vertically or at an inclination angle smaller than 90°. The optical coupling system 12 , the volume grating 13 and the focusing optical system 14 are all coated with an anti-reflection film.

激光谐振腔2由激光增益介质晶体21、非线性倍频晶体22和双折射晶体23通过胶合或者光胶粘合而成。其中,激光增益介质晶体51具体使用Nd:YVO4晶体,非线性倍频晶体52具体使用KTP晶体,折射晶体53是基频光的1/4波片或者1/8波片,也可以是倍频光的1/2波片或者全波片。激光谐振腔5内各元件通过胶合或者光胶粘合。激光增益介质晶体21的前端面上镀有由1064nm的高反膜、532nm的高反膜和808nm的增透膜组成的前腔镜膜,其后端面上镀有1064nm和532nm两种增透膜。非线性倍频晶体22的前、后两个端面均镀有1064nm和532nm两种增透膜。双折射晶体23的前端面上镀有532nm和1064nm两种增透膜,其后端面上镀有由1064nm的高反膜和532nm的增透膜组成的后腔镜膜。The laser resonator 2 is formed by bonding a laser gain medium crystal 21 , a nonlinear frequency doubling crystal 22 and a birefringent crystal 23 by gluing or optical glue. Among them, the laser gain medium crystal 51 specifically uses Nd:YVO4 crystal, the nonlinear frequency doubling crystal 52 specifically uses KTP crystal, and the refraction crystal 53 is a 1/4 wave plate or a 1/8 wave plate of the fundamental frequency light, and can also be a frequency doubling 1/2 wave plate or full wave plate of light. The components in the laser resonator 5 are bonded by gluing or optical glue. The front end surface of the laser gain medium crystal 21 is coated with a front cavity mirror film consisting of a 1064nm high reflection film, a 532nm high reflection film and an 808nm anti-reflection film, and the rear end surface is coated with two anti-reflection films of 1064nm and 532nm . The front and rear end faces of the nonlinear frequency doubling crystal 22 are coated with two types of anti-reflection coatings of 1064nm and 532nm. Two kinds of anti-reflection coatings of 532nm and 1064nm are coated on the front surface of the birefringent crystal 23, and a rear cavity mirror film composed of a high-reflection coating of 1064nm and an anti-reflection coating of 532nm is coated on the rear end surface.

前述宽温低噪声倍频固体激光器中,半导体激光器作为激光泵浦系统的泵浦源发出泵浦光,该光经光学耦合系统整形成平行光后进入体布拉格光栅,大部分光将透过体布拉格光栅,而波长范围在(809±0.5)nm范围内的光束有一部分被反射回半导体激光器内。由于体布拉格光栅对特定波长的选择性,构成一个具有波长选择性质的外腔,反馈回去的部分光将在半导体激光器芯片的后端面和布拉格光栅之间形成稳定的振荡,实现了波长的锁定。经锁定后的泵浦光经过聚焦光学系统进入激光增益介质晶体。激光增益介质晶体前端面镀有的前腔镜膜和双折射晶体后端面镀有的后腔镜膜之间构成谐振腔,在该谐振腔内插入非线性倍频晶体,从而产生532nm低噪声的腔内倍频绿光输出。In the aforementioned wide-temperature low-noise frequency-doubled solid-state laser, the semiconductor laser is used as the pumping source of the laser pumping system to emit pumping light. The light is shaped into parallel light by the optical coupling system and then enters the volume Bragg grating. Most of the light will pass through the volume Bragg grating. Bragg grating, and a part of the light beam in the wavelength range of (809±0.5)nm is reflected back into the semiconductor laser. Due to the selectivity of the volume Bragg grating to specific wavelengths, an external cavity with wavelength selective properties is formed, and part of the light fed back will form a stable oscillation between the rear end facet of the semiconductor laser chip and the Bragg grating, realizing wavelength locking. The locked pump light enters the laser gain medium crystal through the focusing optical system. A resonant cavity is formed between the front cavity mirror film coated on the front surface of the laser gain medium crystal and the rear cavity mirror film coated on the rear end surface of the birefringent crystal, and a nonlinear frequency doubling crystal is inserted in the resonant cavity to generate a 532nm low-noise Intra-cavity frequency doubled green light output.

由于布拉格光栅能对半导体激光器的输出波长进行锁定,使得激光泵浦系统的输出光谱基本不随温度变化,从而获得稳定的光谱输出,该光谱输出锁定在激光增益介质晶体的峰值吸收波长处且线宽压缩,从而提高泵浦光在激光增益介质晶体内吸收深度的稳定性,使得激光谐振腔内纵模稳定度提高,进而拓宽低噪声的温度范围。Since the Bragg grating can lock the output wavelength of the semiconductor laser, the output spectrum of the laser pump system basically does not change with the temperature, thus obtaining a stable spectral output, which is locked at the peak absorption wavelength of the laser gain medium crystal and the line width Compression, thereby improving the stability of the absorption depth of the pump light in the laser gain medium crystal, improving the stability of the longitudinal mode in the laser resonator, and widening the temperature range of low noise.

Claims (10)

1. a wide temperature low noise frequency-multiplication solid state laser, is characterized in that, comprises laser pumping system (1) and laserresonator (2); Described laser pumping system (1) comprise semiconductor laser (11) and the pump direction that sends with this semiconductor laser (11) with the optical coupling system (12) set gradually of optical axis, body grating (13) and Focused Optical system (14); Described laserresonator (2) is made up of gain medium crystal (21), frequency doubling non-linear's crystal (22) and birefringece crystal (23).
2. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, the wave-length coverage of the laser that described semiconductor laser (11) is launched is 800nm ~ 1000nm.
3. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, described optical coupling system (12) is single optical lens or optical lens group.
4. wide temperature low noise frequency-multiplication solid state laser according to claim 1, it is characterized in that, described body grating (13) is Volume Bragg grating.
5. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, the diffraction efficiency of described body grating (13) is 1%-50%.
6. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, the output beam of described semiconductor laser (11) is vertical or incide on body grating (13) with the inclination angle being less than 90 °.
7. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, described optical coupling system (12), body grating (13) and Focused Optical system (14) are all coated with anti-reflection film.
8. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, described gain medium crystal (21) is Nd:YVO4 crystal; Described frequency doubling non-linear's crystal (22) is ktp crystal; Described birefringece crystal (23) is quarter wave plate or 1/8 wave plate of fundamental frequency light, or described birefringece crystal (23) is 1/2 wave plate or the full-wave plate of frequency doubled light.
9. wide temperature low noise frequency-multiplication solid state laser according to claim 1, it is characterized in that, described gain medium crystal (21), frequency doubling non-linear's crystal (22) and birefringece crystal (23) are coated with front cavity mirror film, anti-reflection film and Effect of Back-Cavity Mirror film respectively.
10. wide temperature low noise frequency-multiplication solid state laser according to claim 1, it is characterized in that, described gain medium crystal (21), between frequency doubling non-linear's crystal (22) and birefringece crystal (23) respectively by gummed or optical cement bonding.
CN201520032894.2U 2015-01-16 2015-01-16 Wide temperature low noise frequency-multiplication solid state laser Expired - Lifetime CN204349202U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105790067A (en) * 2016-05-27 2016-07-20 昆山华辰光电科技有限公司 Wavelength-locked semiconductor laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105790067A (en) * 2016-05-27 2016-07-20 昆山华辰光电科技有限公司 Wavelength-locked semiconductor laser

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