CN204349202U - Wide temperature low noise frequency-multiplication solid state laser - Google Patents
Wide temperature low noise frequency-multiplication solid state laser Download PDFInfo
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- CN204349202U CN204349202U CN201520032894.2U CN201520032894U CN204349202U CN 204349202 U CN204349202 U CN 204349202U CN 201520032894 U CN201520032894 U CN 201520032894U CN 204349202 U CN204349202 U CN 204349202U
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Abstract
The utility model relates to a kind of wide temperature low noise frequency-multiplication solid state laser, belongs to laser technology field.A kind of wide temperature low noise frequency-multiplication solid state laser, comprises pump direction that semiconductor laser and this semiconductor laser send with the optical coupling system set gradually of optical axis, body grating and laserresonator; Described laserresonator is made up of gain medium crystal, frequency doubling non-linear's crystal and birefringece crystal.In the utility model, employ body grating lock wavelength, make the Wavelength stabilized absworption peak place at crystal of semiconductor laser and linewidth narrowing, thus improve the stability absorbing the degree of depth in laser crystal, longitudinal mode stability in laserresonator is improved, and then the temperature range of expansion low noise.
Description
Technical field
The utility model relates to a kind of laser, particularly one wide temperature low noise frequency-multiplication solid state laser.
Background technology
At present, the laser of the visible waveband of intracavity frequency doubling is the laser being penetrated infrared band by pumping Nd:YVO4 or Nd:YAG transmitting-receiving, then through nonlinear crystal as KTP, produces visible laser.Intracavity frequency doubling laser disclosed in my company, comprise pumping source resonant cavity, pumping source is the general semiconductor laser not locking wavelength, resonant cavity front end face plated film forms front cavity mirror, resonant cavity rear end plated film forms Effect of Back-Cavity Mirror, comprise gain medium and frequency doubling non-linear's crystal in resonant cavity, separately birefringece crystal is processed into the polarization state of fundamental frequency light and frequency doubled light, to realize the laser of various different performance.Combined by gummed or optical cement between each element.The power output of this product has higher stability to temperature and has low noise, the output of high polarizability, and achieves commercialization.
But, the shortcoming of this product is because laser crystal Absorber Bandwidth is narrower and sharper at present, absorption efficiency is lower, and the wider 1-2nm that is about of spectral width of pumping semiconductor laser output beam when normally freely operating, centre wavelength produces the drift of about 0.24nm/ DEG C with temperature respectively and produces the drift of about 0.07nm/mA with electric current.This just makes when alternating temperature or time-dependent current, and under different conditions, the stability of power output and wavelength can be poor, thus have influence on the longitudinal modal stability in chamber, and then affect the noiseproof feature of laser.
Utility model content
The purpose of this utility model is for the problems referred to above, and provide a kind of wide temperature low noise frequency-multiplication solid state laser, the longitudinal modal stability in its chamber is good, and noise is low.
The purpose of this utility model is achieved in that
A kind of wide temperature low noise frequency-multiplication solid state laser, is characterized in that, comprise laser pumping system and laserresonator; Described laser pumping system comprise semiconductor laser and the pump direction that sends with this semiconductor laser with the optical coupling system set gradually of optical axis, body grating and Focused Optical system; Described laserresonator is made up of gain medium crystal, frequency doubling non-linear's crystal and birefringece crystal.
Wherein, the wave-length coverage of the laser of described semiconductor laser is 800nm ~ 1000nm.
Wherein, described optical coupling system is single optical lens or optical lens group.
Wherein, described body grating is Volume Bragg grating.
Wherein, the diffraction efficiency of described body grating is 1%-50%.
Wherein, the output beam of described semiconductor laser is vertical or incide on body grating with the inclination angle being less than 90 °.
Wherein, described optical coupling system, body grating and Focused Optical system are all coated with anti-reflection film.
Wherein, described gain medium crystal is Nd:YVO4 crystal; Described frequency doubling non-linear's crystal is ktp crystal; Described birefringece crystal is quarter wave plate or 1/8 wave plate of fundamental frequency light, or described birefringece crystal is 1/2 wave plate or the full-wave plate of frequency doubled light.
Wherein, described gain medium crystal, frequency doubling non-linear's crystal and birefringece crystal are coated with front cavity mirror film, anti-reflection film and Effect of Back-Cavity Mirror film respectively.
Wherein, described gain medium crystal, between frequency doubling non-linear's crystal and birefringece crystal respectively by gummed or optical cement bonding.
The beneficial effects of the utility model are: in this laser, employ body grating lock wavelength, make the Wavelength stabilized absworption peak place at crystal of semiconductor laser and linewidth narrowing, thus in raising laser crystal, absorb the stability of the degree of depth, longitudinal mode stability in laserresonator is improved, and then the temperature range of expansion low noise.
Accompanying drawing explanation
Fig. 1 structural representation of the present utility model.
Embodiment
Below in conjunction with specific embodiments and the drawings, set forth the utility model further.
As shown in Figure 1, a kind of wide temperature low noise frequency-multiplication solid state laser, comprises laser pumping system 1 and laserresonator 2.
Laser pumping system 1 comprise semiconductor laser 11 and the pump direction that sends with this semiconductor laser 11 with the optical coupling system 12 set gradually of optical axis, body grating 13 and Focused Optical system 14.Wherein, the wave-length coverage of the laser of semiconductor laser 11 transmitting is 800nm ~ 1000nm; Optical coupling system 12 can be single optical lens or optical lens group; Body grating 13 specifically diffraction efficiency is the Volume Bragg grating of 1%-50%.The output beam of semiconductor laser 11 is vertical or incide on body grating 13 with the inclination angle being less than 90 °.Optical coupling system 12, body grating 13 and Focused Optical system 14 are all coated with anti-reflection film.
Laserresonator 2 is bonded by gummed or optical cement by gain medium crystal 21, frequency doubling non-linear's crystal 22 and birefringece crystal 23.Wherein, gain medium crystal 51 specifically uses Nd:YVO4 crystal, and frequency doubling non-linear's crystal 52 specifically uses ktp crystal, and refracting crystal 53 is quarter wave plate or 1/8 wave plate of fundamental frequency light, also can be 1/2 wave plate or the full-wave plate of frequency doubled light.In laserresonator 5, each element is by gummed or optical cement bonding.The front end face of gain medium crystal 21 is coated with the front cavity mirror film be made up of the anti-reflection film of the high-reflecting film of 1064nm, the high-reflecting film of 532nm and 808nm, thereafter end face is coated with 1064nm and 532nm two kinds of anti-reflection films.Former and later two end faces of frequency doubling non-linear's crystal 22 are all coated with 1064nm and 532nm two kinds of anti-reflection films.The front end face of birefringece crystal 23 is coated with 532nm and 1064nm two kinds of anti-reflection films, thereafter end face is coated with the Effect of Back-Cavity Mirror film be made up of the high-reflecting film of 1064nm and the anti-reflection film of 532nm.
In aforementioned wide temperature low noise frequency-multiplication solid state laser, semiconductor laser sends pump light as the pumping source of laser pumping system, this light is shaped to after directional light through optical coupling system and enters Volume Bragg grating, major part light by permeation body Bragg grating, and the light beam of wave-length coverage within the scope of (809 ± 0.5) nm some be reflected back toward in semiconductor laser.Because Volume Bragg grating is to the selectivity of specific wavelength, form the exocoel that has wavelength chooses character, the part light feedbacked forms stable vibration by between the rear end face and Bragg grating of semiconductor laser chip, achieves the locking of wavelength.Pump light after locking enters gain medium crystal through Focused Optical system.Form resonant cavity between the front cavity mirror film that gain medium crystal front end face is coated with and the Effect of Back-Cavity Mirror film that birefringece crystal rear end face is coated with, in this resonant cavity, insert frequency doubling non-linear's crystal, thus the intracavity frequency doubling green glow producing 532nm low noise exports.
Because the output wavelength of Bragg grating energy noise spectra of semiconductor lasers locks, the output spectrum of laser pumping system is not varied with temperature substantially, thus obtain stable spectrum output, this spectrum exports the peak absorbtivity wavelength place and linewidth compression that are locked in gain medium crystal, thus improve the stability of pump light in the brilliant body absorption degree of depth of gain medium, longitudinal mode stability in laserresonator is improved, and then widens the temperature range of low noise.
Claims (10)
1. a wide temperature low noise frequency-multiplication solid state laser, is characterized in that, comprises laser pumping system (1) and laserresonator (2); Described laser pumping system (1) comprise semiconductor laser (11) and the pump direction that sends with this semiconductor laser (11) with the optical coupling system (12) set gradually of optical axis, body grating (13) and Focused Optical system (14); Described laserresonator (2) is made up of gain medium crystal (21), frequency doubling non-linear's crystal (22) and birefringece crystal (23).
2. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, the wave-length coverage of the laser that described semiconductor laser (11) is launched is 800nm ~ 1000nm.
3. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, described optical coupling system (12) is single optical lens or optical lens group.
4. wide temperature low noise frequency-multiplication solid state laser according to claim 1, it is characterized in that, described body grating (13) is Volume Bragg grating.
5. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, the diffraction efficiency of described body grating (13) is 1%-50%.
6. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, the output beam of described semiconductor laser (11) is vertical or incide on body grating (13) with the inclination angle being less than 90 °.
7. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, described optical coupling system (12), body grating (13) and Focused Optical system (14) are all coated with anti-reflection film.
8. wide temperature low noise frequency-multiplication solid state laser according to claim 1, is characterized in that, described gain medium crystal (21) is Nd:YVO4 crystal; Described frequency doubling non-linear's crystal (22) is ktp crystal; Described birefringece crystal (23) is quarter wave plate or 1/8 wave plate of fundamental frequency light, or described birefringece crystal (23) is 1/2 wave plate or the full-wave plate of frequency doubled light.
9. wide temperature low noise frequency-multiplication solid state laser according to claim 1, it is characterized in that, described gain medium crystal (21), frequency doubling non-linear's crystal (22) and birefringece crystal (23) are coated with front cavity mirror film, anti-reflection film and Effect of Back-Cavity Mirror film respectively.
10. wide temperature low noise frequency-multiplication solid state laser according to claim 1, it is characterized in that, described gain medium crystal (21), between frequency doubling non-linear's crystal (22) and birefringece crystal (23) respectively by gummed or optical cement bonding.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201520032894.2U CN204349202U (en) | 2015-01-16 | 2015-01-16 | Wide temperature low noise frequency-multiplication solid state laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790067A (en) * | 2016-05-27 | 2016-07-20 | 昆山华辰光电科技有限公司 | Wavelength-locked semiconductor laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105790067A (en) * | 2016-05-27 | 2016-07-20 | 昆山华辰光电科技有限公司 | Wavelength-locked semiconductor laser |
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Effective date of registration: 20191018 Address after: 350000 China Aviation Technology Industrial Zone 253 Fuxing East Road, Jinan District, Fuzhou City, Fujian Province Patentee after: Fuzhou Photop Technologies Inc. Address before: 200233, Shanghai, Qinzhou, Xuhui District North Road, No. 54, building No. 1089, third floor Patentee before: Shanghai Gaoyi Laser Technology Co., Ltd. |