CN204301766U - A kind of high frequency conversion demodulation system - Google Patents
A kind of high frequency conversion demodulation system Download PDFInfo
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- CN204301766U CN204301766U CN201420696355.4U CN201420696355U CN204301766U CN 204301766 U CN204301766 U CN 204301766U CN 201420696355 U CN201420696355 U CN 201420696355U CN 204301766 U CN204301766 U CN 204301766U
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Abstract
The utility model discloses a kind of high frequency conversion demodulation system, it is characterized in that: by transformer T1, transformer T2, sample circuit, the voltage comparator circuit be connected with sample circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms; The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with voltage comparator circuit.The utility model can improve the operating frequency of demodulation system greatly, makes its range of application wider.
Description
Technical field
The utility model relates to a kind of demodulation system, specifically refers to a kind of high frequency conversion demodulation system.
Background technology
Wave detector can detect certain useful information in fluctuation signal, and it is for identifying the device that ripple, oscillator signal exist or change, and also can be used for extracting the information entrained by the external world.Current wave detector is widely used, and the noise etc. as can be used for geological prospecting and engineering survey, when running for measurement equipment, has brought very large facility.
But the operating frequency that is suitable for of wave detector is on the market not high at present, which greatly limits the working range of wave detector.
Utility model content
The purpose of this utility model is to overcome the not high defect of the operating frequency of existing wave detector, provides a kind of high frequency conversion demodulation system gone under high-frequency conversion environment.
The purpose of this utility model is achieved through the following technical solutions: a kind of high frequency conversion demodulation system, by transformer T1, transformer T2, sample circuit, be connected with sample circuit voltage comparator circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms; The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with voltage comparator circuit.
Further, described sample circuit is by amplifier P, one end is connected with the normal phase input end of amplifier P, the other end is as the resistance R1 of signal input part, positive pole is connected with the normal phase input end of amplifier P, the electric capacity C1 of minus earth, the resistance R2 be in parallel with electric capacity C1, be serially connected in the resistance R4 between the inverting input of amplifier P and output stage, and one end is connected with the inverting input of amplifier P, the resistance R3 of other end ground connection forms; The output stage of described amplifier P is also connected with voltage comparator circuit.
Described voltage comparator circuit is by comparable chip U1, the resistance R6 that one end is connected with the IN2 pin of comparable chip U1, the other end is connected with the V+ pin of comparable chip U1, the resistance R7 that IN2 pin is connected, the other end is then connected with mixting circuit of one end and comparable chip U1, the resistance R5 that one end is connected with the output stage of amplifier P, the other end is then connected with the IN1 pin of comparable chip U1, and the electric capacity C2 that positive pole is connected with the V-pin of comparable chip U1, negative pole is connected with the GND pin of comparable chip U1 forms; The V+ pin of described comparable chip U1 is connected with external voltage, and its OUT pin is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1 simultaneously, GND pin ground connection.
Described mixting circuit is by dual-gate field-effect pipe K, resistance R8, resistance R13, and inductance L 1 forms; One end of resistance R8 is connected with a grid of dual-gate field-effect pipe K, the other end is connected with resistance R7, the drain electrode that one end of inductance L 1 is connected with the drain electrode of field effect transistor K, the other end gets back to field effect transistor K after resistance R13; The tie point of resistance R13 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of field effect transistor K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
The first described change-over circuit is by triode Q1, the resistance R9 that one end is connected with the emitter of triode Q1, the other end is connected with the source electrode of dual-gate field-effect pipe K, the electric capacity C3 be in parallel with resistance R9, the electric capacity C4 that negative pole is connected with the tie point of inductance L 1 with resistance R13, positive pole is connected with the collector electrode of triode Q1 forms; The base stage of described triode Q1 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
Described treatment circuit is by triode Q2, triode Q3, the resistance R10 that one end is connected with the base stage of triode Q3, the other end is connected with the emitter of triode Q1, the resistance R11 that one end is connected with the emitter of triode Q3, the other end is connected with emitter and second change-over circuit of triode Q1 simultaneously forms; The base stage of described triode Q3 is connected with the emitter of triode Q2, its collector electrode is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q2 is connected with the tie point of inductance L 1 with resistance R13, its collector electrode is connected with the drain electrode of field effect transistor K and the second change-over circuit simultaneously.
The second described change-over circuit comprises electric capacity C8, electric capacity C7, electric capacity C6, electric capacity C5, resistance R12; The positive pole of electric capacity C8 is connected with transformer T2 former limit Same Name of Ends, its negative pole is connected with the collector electrode of triode Q2, the positive pole of electric capacity C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of electric capacity C6 is connected with the emitter of triode Q3, negative pole is connected with the non-same polarity on the former limit of transformer T2, and the positive pole of electric capacity C5 is connected with the emitter of triode Q1, its negative pole is then connected with the negative pole of electric capacity C6 after resistance R12.
The utility model comparatively prior art is compared, and has the following advantages and beneficial effect:
(1) the utility model can improve the operating frequency of demodulation system greatly, makes its range of application wider.
(2) the utility model adopts the design of dual-gate field-effect pipe, makes demodulation system work more stable.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present utility model.
Embodiment
Below in conjunction with embodiment, the utility model is described in further detail, but execution mode of the present utility model is not limited to this.
Embodiment
As shown in Figure 1, high frequency conversion demodulation system of the present utility model, by transformer T1, transformer T2, sample circuit, be connected with sample circuit voltage comparator circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms.The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with voltage comparator circuit.
Sample circuit to be collected after outside signal Signal transmissions to voltage comparator circuit.It is by amplifier P, one end is connected with the normal phase input end of amplifier P, the other end is as the resistance R1 of signal input part, positive pole is connected with the normal phase input end of amplifier P, the electric capacity C1 of minus earth, the resistance R2 be in parallel with electric capacity C1, be serially connected in the resistance R4 between the inverting input of amplifier P and output stage, and one end is connected with the inverting input of amplifier P, the resistance R3 of other end ground connection forms; The output stage of described amplifier P is also connected with voltage comparator circuit.
Wherein, voltage comparator circuit is by comparable chip U1, the resistance R6 that one end is connected with the IN2 pin of comparable chip U1, the other end is connected with the V+ pin of comparable chip U1, the resistance R7 that IN2 pin is connected, the other end is then connected with mixting circuit of one end and comparable chip U1, the resistance R5 that one end is connected with the output stage of amplifier P, the other end is then connected with the IN1 pin of comparable chip U1, and the electric capacity C2 that positive pole is connected with the V-pin of comparable chip U1, negative pole is connected with the GND pin of comparable chip U1 forms; The V+ pin of described comparable chip U1 is connected with external voltage, and its OUT pin is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1 simultaneously, GND pin ground connection.In order to ensure implementation result, this comparable chip is preferably LM311 integrated chip.
Meanwhile, mixting circuit is by dual-gate field-effect pipe K, resistance R8, resistance R13, and inductance L 1 forms; One end of resistance R8 is connected with a grid of dual-gate field-effect pipe K, the other end is connected with resistance R7, the drain electrode that one end of inductance L 1 is connected with the drain electrode of field effect transistor K, the other end gets back to field effect transistor K after resistance R13; The tie point of resistance R13 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of field effect transistor K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
The first described change-over circuit is by triode Q1, the resistance R9 that one end is connected with the emitter of triode Q1, the other end is connected with the source electrode of dual-gate field-effect pipe K, the electric capacity C3 be in parallel with resistance R9, the electric capacity C4 that negative pole is connected with the tie point of inductance L 1 with resistance R13, positive pole is connected with the collector electrode of triode Q1 forms; The base stage of described triode Q1 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
Described treatment circuit is by triode Q2, triode Q3, the resistance R10 that one end is connected with the base stage of triode Q3, the other end is connected with the emitter of triode Q1, the resistance R11 that one end is connected with the emitter of triode Q3, the other end is connected with emitter and second change-over circuit of triode Q1 simultaneously forms; The base stage of described triode Q3 is connected with the emitter of triode Q2, its collector electrode is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q2 is connected with the tie point of inductance L 1 with resistance R13, its collector electrode is connected with the drain electrode of field effect transistor K and the second change-over circuit simultaneously.
The second described change-over circuit comprises electric capacity C8, electric capacity C7, electric capacity C6, electric capacity C5, resistance R12; The positive pole of electric capacity C8 is connected with transformer T2 former limit Same Name of Ends, its negative pole is connected with the collector electrode of triode Q2, the positive pole of electric capacity C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of electric capacity C6 is connected with the emitter of triode Q3, negative pole is connected with the non-same polarity on the former limit of transformer T2, and the positive pole of electric capacity C5 is connected with the emitter of triode Q1, its negative pole is then connected with the negative pole of electric capacity C6 after resistance R12.The Same Name of Ends ground connection of described transformer T2 secondary, non-same polarity are as signal output part.
As mentioned above, just well the utility model can be implemented.
Claims (7)
1. a high frequency conversion demodulation system, it is characterized in that: by transformer T1, transformer T2, sample circuit, be connected with sample circuit voltage comparator circuit, the mixting circuit be connected with transformer T1 secondary, the first change-over circuit be connected with mixting circuit, the treatment circuit be simultaneously connected with the first change-over circuit with mixting circuit, the second change-over circuit be connected with treatment circuit output forms; The former limit of described transformer T2 is connected with the second change-over circuit, and the former limit of transformer T1 is connected with voltage comparator circuit.
2. a kind of high frequency conversion demodulation system according to claim 1, it is characterized in that: described sample circuit is by amplifier P, one end is connected with the normal phase input end of amplifier P, the other end is as the resistance R1 of signal input part, positive pole is connected with the normal phase input end of amplifier P, the electric capacity C1 of minus earth, the resistance R2 be in parallel with electric capacity C1, be serially connected in the resistance R4 between the inverting input of amplifier P and output stage, and one end is connected with the inverting input of amplifier P, the resistance R3 of other end ground connection forms; The output stage of described amplifier P is also connected with voltage comparator circuit.
3. a kind of high frequency conversion demodulation system according to claim 2, it is characterized in that: described voltage comparator circuit is by comparable chip U1, one end is connected with the IN2 pin of comparable chip U1, the resistance R6 that the other end is connected with the V+ pin of comparable chip U1, one end is connected with the IN2 pin of comparable chip U1, the resistance R7 that the other end is then connected with mixting circuit, one end is connected with the output stage of amplifier P, the resistance R5 that the other end is then connected with the IN1 pin of comparable chip U1, and positive pole is connected with the V-pin of comparable chip U1, the electric capacity C2 that negative pole is connected with the GND pin of comparable chip U1 forms, the V+ pin of described comparable chip U1 is connected with external voltage, and its OUT pin is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T1 simultaneously, GND pin ground connection.
4. a kind of high frequency conversion demodulation system according to claim 3, is characterized in that: described mixting circuit is by dual-gate field-effect pipe K, resistance R8, resistance R13, and inductance L 1 forms; One end of resistance R8 is connected with a grid of dual-gate field-effect pipe K, the other end is connected with resistance R7, the drain electrode that one end of inductance L 1 is connected with the drain electrode of field effect transistor K, the other end gets back to field effect transistor K after resistance R13; The tie point of resistance R13 and inductance L 1 is connected with the first change-over circuit with treatment circuit simultaneously, the b grid of field effect transistor K is connected with transformer T1 secondary non-same polarity, drain be connected with treatment circuit, source electrode is connected with the first change-over circuit.
5. a kind of high frequency conversion demodulation system according to claim 4, it is characterized in that: the first described change-over circuit is by triode Q1, the resistance R9 that one end is connected with the emitter of triode Q1, the other end is connected with the source electrode of dual-gate field-effect pipe K, the electric capacity C3 be in parallel with resistance R9, the electric capacity C4 that negative pole is connected with the tie point of inductance L 1 with resistance R13, positive pole is connected with the collector electrode of triode Q1 forms; The base stage of described triode Q1 is connected with the non-same polarity on the former limit of transformer T1, and its emitter is connected with treatment circuit.
6. a kind of high frequency conversion demodulation system according to claim 5, it is characterized in that: described treatment circuit is by triode Q2, triode Q3, the resistance R10 that one end is connected with the base stage of triode Q3, the other end is connected with the emitter of triode Q1, the resistance R11 that one end is connected with the emitter of triode Q3, the other end is connected with emitter and second change-over circuit of triode Q1 simultaneously forms; The base stage of described triode Q3 is connected with the emitter of triode Q2, its collector electrode is connected with the Same Name of Ends on the former limit of transformer T2, emitter is connected with the second change-over circuit, and the base stage of triode Q2 is connected with the tie point of inductance L 1 with resistance R13, its collector electrode is connected with the drain electrode of field effect transistor K and the second change-over circuit simultaneously.
7. a kind of high frequency conversion demodulation system according to claim 6, is characterized in that: the second described change-over circuit comprises electric capacity C8, electric capacity C7, electric capacity C6, electric capacity C5, resistance R12; The positive pole of electric capacity C8 is connected with transformer T2 former limit Same Name of Ends, its negative pole is connected with the collector electrode of triode Q2, the positive pole of electric capacity C7 is connected with non-same polarity with the Same Name of Ends on the former limit of transformer T2 respectively with negative pole, the positive pole of electric capacity C6 is connected with the emitter of triode Q3, negative pole is connected with the non-same polarity on the former limit of transformer T2, and the positive pole of electric capacity C5 is connected with the emitter of triode Q1, its negative pole is then connected with the negative pole of electric capacity C6 after resistance R12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420696355.4U CN204301766U (en) | 2014-11-18 | 2014-11-18 | A kind of high frequency conversion demodulation system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420696355.4U CN204301766U (en) | 2014-11-18 | 2014-11-18 | A kind of high frequency conversion demodulation system |
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| Publication Number | Publication Date |
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| CN204301766U true CN204301766U (en) | 2015-04-29 |
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| CN201420696355.4U Active CN204301766U (en) | 2014-11-18 | 2014-11-18 | A kind of high frequency conversion demodulation system |
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| CN (1) | CN204301766U (en) |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Wei Inventor after: Sun Yiqian Inventor after: Sun Fan Inventor after: Huang Chengjun Inventor before: Che Rongjun Inventor before: Gao Xiaoying |
|
| COR | Change of bibliographic data | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20151201 Address after: 830011 the Xinjiang Uygur Autonomous Region high tech Industrial Development Zone (new city), Changchun Road, No. East Road, No. two, No. 66 Patentee after: Electric Power Research Institute, State Grid Xinjiang Electric Power Company Patentee after: Shanghai Jiao Tong University Address before: 610000, 8 South Street, Chengdu hi tech Zone, Sichuan Patentee before: Chengdu Cuopu Technology Co., Ltd. |