CN204288828U - The preparation facilities of low resistivity, transparent conducting film - Google Patents
The preparation facilities of low resistivity, transparent conducting film Download PDFInfo
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- CN204288828U CN204288828U CN201420639710.4U CN201420639710U CN204288828U CN 204288828 U CN204288828 U CN 204288828U CN 201420639710 U CN201420639710 U CN 201420639710U CN 204288828 U CN204288828 U CN 204288828U
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Abstract
A preparation facilities for low resistivity, transparent conducting film, comprise following (a) silver-colored line synthesis unit, it utilizes silver-colored line Material synthesis nano silver wires with high length-diameter ratio; (b) conductive silver paste deployment unit, its with described silver-colored line for conductive silver paste allocated by filler; (c) coating unit, described conductive silver paste is coated on substrate and forms rete by it; And (d) post-processing unit, it is to described rete reprocessing.The utility model is by replacing the preparation facilities of spherical nano-Ag particles as the main packing material of conductive silver paste using nano silver wires with high length-diameter ratio, realize reaching conduction object with contacting with each other between line silver-colored in slurry, compared to particle type contact, linear nano silver obviously improves its electric conductivity while raising reliability.
Description
Technical field
The utility model relates to this electronic information display field, its prepare conducting film, be the very important thin-film materials such as liquid crystal display in electronic information field (LCD), plasma display (PDP), electroluminescent display (EL/OLED), touch-screen (Touch Panel).
Background technology
The products such as following mobile terminal, wearable device, intelligent appliance, solid demand is had to touch panel, simultaneously along with contact panel is in large size, low priceization, and conventional I TO film can not be used for flexible application, the factors such as the essential problem such as conductivity and light transmittance not easily overcomes, many panel vendors begin one's study the substitute of ITO one after another, comprise the materials such as nano-silver thread, metal grill, CNT (carbon nano-tube) and Graphene.New material technology application can extend to the equipment of more than 20 inches from conventional panel size one tunnel of smart mobile phone, and its resistance, and extensibility, bendability is all better than ito thin film.
Nano-silver thread technology will be the new technology being hopeful alternative ito thin film in recent emerging touch technology most.Nano-silver thread (SNW, silvernanowire) technology, is spread upon on flexibility or glass substrate by nano-silver thread ink material, then utilizes technology for coating, makes the transparent conductive film with Nano grade silver line conductive network pattern.Make physical mechanism because it is special, the diameter of the live width of nano-silver thread is very little, is about 50nm, much smaller than 1um, thus there is not the problem of unauspicious interference, can be applied on the display screen of various sizes.In addition, because live width is less, the film that the conductive film that silver-colored line technology is made is made compared to metal grill technology can reach higher light transmittance.Secondly, nano-silver thread film has less bending radius compared to metal grill film, and resistance change rate is less when bending, is applied in the equipment with curved-surface display, such as intelligent watch, time on bracelet etc., has more advantage.
Utility model content
The utility model aims to provide novel low resistivity, transparent conducting film (TCF) preparation facilities.
In order to reach above-mentioned purpose, the preparation facilities providing a kind of low resistivity, transparent conducting film of the present utility model, comprise following (a) silver-colored line synthesis unit, it utilizes silver-colored line Material synthesis nano silver wires with high length-diameter ratio; (b) conductive silver paste deployment unit, its with described silver-colored line for conductive silver paste allocated by filler; (c) coating unit, described conductive silver paste is coated on substrate and forms rete by it; And (d) post-processing unit, it is to described rete reprocessing.
In some embodiments, described silver-colored line raw material comprises silver nitrate, ethylene glycol, and polyvinylpyrrolidone, described silver-colored line synthesis unit reacts 30 ~ 120 minutes at 100 ~ 200 DEG C of temperature, obtained described nano silver wires with high length-diameter ratio, wherein the mol ratio of above-mentioned substance is as follows: silver nitrate: ethylene glycol: polyvinylpyrrolidone=1:1 ~ 20:0.05 ~ 5.
In some embodiments, described deployment unit) according to mass ratio 1:1 ~ 20:1 mixed matrix resin and described nano-silver thread and the curing accelerator adding described matrix resin consumption 1% ~ 3% mix.
In some embodiments, described matrix resin comprises the bisphenol A type epoxy resin that mass ratio is the ratio of 1:0.05 ~ 0.5:0.2 ~ 2, epoxy active diluent, and the mixture of curing agent 4-methylhexahydrophthaacid acid.
In some embodiments, described curing accelerator comprises (1-cyano group 2-ethyl 4-methylimidazole 2ZE4MZ-CN).
In some embodiments, described coating unit is with blade coating, and lift, described conductive silver paste is coated on described substrate by spin coating mode.
In some embodiments, described substrate comprises glass, PET, or PVA.
In some embodiments, the described substrate base of having plated film to be placed under 100 ~ 350 DEG C of temperature conditions heat treatment 20 ~ 200 minutes by described post-processing unit, obtains low resistivity, transparent conducting film.
Compared with prior art, the utility model has the advantage of: replace the preparation facilities of spherical nano-Ag particles as the main packing material of conductive silver paste by nano silver wires with high length-diameter ratio, realize reaching conduction object with contacting with each other between line silver-colored in slurry, compared to particle type contact, linear nano silver obviously improves its electric conductivity while raising reliability.In addition, because wire arrangement can realize with less Nano Silver to realize Thin film conductive, therefore production cost have also been obtained and significantly reduces, and this is to Realization of Product large-scale production tool significance.In addition, the conductive silver paste prepared has good impressionability, conductivity and superpower adhesive force, and the film manufactured on this basis integrates transparent, frivolous, bent, slip-off preventing, and this is not available for like product.
Accompanying drawing explanation
By reference to the accompanying drawings, by detailed description hereafter, above-mentioned and other feature and advantage of the present utility model more clearly can be understood, wherein:
The calcspar of the preparation facilities of Fig. 1 the utility model embodiment; And
Fig. 2 is the schematic diagram utilizing the conducting film prepared according to the preparation facilities of the utility model embodiment.
Embodiment
See the accompanying drawing of the utility model specific embodiment, hereafter in more detail the utility model will be described.But the utility model can realize in many different forms, and should not be construed as by the restriction in the embodiment of this proposition.On the contrary, it is abundant and complete open in order to reach for proposing these embodiments, and makes those skilled in the art understand scope of the present utility model completely.
Description, describes the preparation facilities of the low resistivity, transparent conducting film according to the utility model embodiment in detail.
As shown in Figure 1, according to the preparation facilities of the low resistivity, transparent conducting film of the utility model embodiment, comprise silver-colored line synthesis unit, it utilizes silver-colored line Material synthesis nano silver wires with high length-diameter ratio.Described silver-colored line raw material comprises silver nitrate, ethylene glycol, and polyvinylpyrrolidone, shown silver-colored line synthesis unit reacts 30 ~ 120 minutes at 100 ~ 200 DEG C of temperature, obtained described nano silver wires with high length-diameter ratio, wherein the mol ratio of above-mentioned substance is as follows: silver nitrate: ethylene glycol: polyvinylpyrrolidone=1:1 ~ 20:0.05 ~ 5.
Preparation facilities according to the low resistivity, transparent conducting film of the utility model embodiment comprises conductive silver paste deployment unit, its with described silver-colored line for conductive silver paste allocated by filler. described deployment unit according to mass ratio 1:1 ~ 20:1 mixed matrix resin and described nano-silver thread and the curing accelerator adding described matrix resin consumption 1% ~ 3% mix.
Described matrix resin comprises the bisphenol A type epoxy resin that mass ratio is the ratio of 1:0.05 ~ 0.5:0.2 ~ 2, epoxy active diluent, and the mixture of curing agent 4-methylhexahydrophthaacid acid.Described curing accelerator comprises (1-cyano group 2-ethyl 4-methylimidazole 2ZE4MZ-CN).
Preparation facilities according to the low resistivity, transparent conducting film of the utility model embodiment comprises coating unit, and shown conductive silver paste is coated on substrate and forms rete by it.Described coating unit is with blade coating, and lift, described conductive silver paste is coated on described substrate by spin coating mode.Described substrate comprises glass, PET, or PVA.
Preparation facilities according to the low resistivity, transparent conducting film of the utility model embodiment comprises post-processing unit, and it is to described rete reprocessing.
The described substrate base of having plated film to be placed under 100 ~ 350 DEG C of temperature conditions heat treatment 20 ~ 200 minutes by described post-processing unit, obtains low resistivity, transparent conducting film.
Now describe the example of the preparation facilities according to the utility model embodiment in detail.
Embodiment
By 0.10mol silver nitrate, 1.1mol ethylene glycol and 0.08mol polyvinylpyrrolidone, at 160 DEG C of temperature, mix and blend reacts the 60min diameter obtained as shown in Figure 1 is 66nm, and length is the nano-silver thread of 7.4um; Be that bisphenol A type epoxy resin, epoxy active diluent and curing agent 4-methylhexahydrophthaacid acid are joined and mixed by the ratio of 1:0.15:0.9 according to mass ratio, make the matrix resin of conducting resinl; Again according to ratio mixed matrix material and the nano-silver thread prepared above of mass ratio 5:1; The curing accelerator (l cyano group 2-ethyl 4-methylimidazole 2ZE4MZ-CN) finally adding basis material consumption 1.5% mixes.Stand-by.
Utilize automatic coating doctor knife coater to carry out film in the flexible pet sheet face cleaned up, after drying, obtain nano-silver thread wet film.Finally the wet film after drying to be placed under 280 DEG C of temperature conditions heat treatment 35 minutes, to obtain nesa coating.
After tested, the resistivity of this nano-silver thread nesa coating is 1.6 × 10-4 Ω cm, visible light transmissivity 85%, through 200 times 180 ° repeatedly to bend after film without fracture or silver-colored obscission, meet the instructions for uses such as liquid crystal display in electronic information field (LCD), plasma display (PDP), electroluminescent display (EL/OLED), touch-screen (Touch Panel) completely.
The conducting film formed thus as shown in Figure 2.
Compared with prior art, the utility model has the advantage of: by replacing the preparation facilities of spherical nano-Ag particles as the main packing material of conductive silver paste using nano silver wires with high length-diameter ratio, realize reaching conduction object with contacting with each other between line silver-colored in slurry, compared to particle type contact, linear nano silver obviously improves its electric conductivity while raising reliability.In addition, because wire arrangement can realize with less Nano Silver to realize Thin film conductive, therefore production cost have also been obtained and significantly reduces, and this is to Realization of Product large-scale production tool significance.In addition, the conductive silver paste prepared has good impressionability, conductivity and superpower adhesive force, and the film manufactured on this basis integrates transparent, frivolous, bent, slip-off preventing, and this is not available for like product.
More than describe preferred embodiment of the present utility model in detail.Should be appreciated that those of ordinary skill in the art just can make many modifications and variations according to design of the present utility model without the need to creative work.All technical staff in the art according to design of the present utility model on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment, all should by the determined protection range of claims.
Claims (2)
1. a preparation facilities for low resistivity, transparent conducting film, is characterized in that, comprising:
(a) silver-colored line synthesis unit, it utilizes silver-colored line Material synthesis nano silver wires with high length-diameter ratio;
(b) conductive silver paste deployment unit, its with described silver-colored line for conductive silver paste allocated by filler;
(c) coating unit, described conductive silver paste is coated on substrate and forms rete by it; And
D () post-processing unit, it is to described rete reprocessing.
2. preparation facilities according to claim 1, is characterized in that, described substrate comprises glass, PET, or PVA.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420639710.4U CN204288828U (en) | 2014-10-30 | 2014-10-30 | The preparation facilities of low resistivity, transparent conducting film |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420639710.4U CN204288828U (en) | 2014-10-30 | 2014-10-30 | The preparation facilities of low resistivity, transparent conducting film |
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| Publication Number | Publication Date |
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| CN204288828U true CN204288828U (en) | 2015-04-22 |
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| CN201420639710.4U Active CN204288828U (en) | 2014-10-30 | 2014-10-30 | The preparation facilities of low resistivity, transparent conducting film |
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2014
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