CN204287085U - Secondary electron detector - Google Patents
Secondary electron detector Download PDFInfo
- Publication number
- CN204287085U CN204287085U CN201420711766.6U CN201420711766U CN204287085U CN 204287085 U CN204287085 U CN 204287085U CN 201420711766 U CN201420711766 U CN 201420711766U CN 204287085 U CN204287085 U CN 204287085U
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- China
- Prior art keywords
- scintillator
- secondary electron
- light
- conducting film
- electron detector
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Abstract
A kind of secondary electron detector, comprising: scintillator, absorbs secondary electron and is converted to light; Light conductor is connected with scintillator; And photoelectric conversion device, amplify after the light that scintillator is derived is converted to electronics, and scintillator comprises: substrate, is configured on above-mentioned light conductor; Conducting film is arranged on substrate, and luminescent film is arranged on conducting film, and scintillator also comprises distribution, and distribution is connected with above-mentioned conducting film.The utility model can suppress the detection limit of the secondary electron sent from specimen surface.
Description
Technical field
The utility model relates to a kind of detecting device, especially a kind of secondary electron detector.
Background technology
In the detecting device of prior art, the part being attracted to the secondary electron near scintillator by high voltage can be absorbed by ring electrode.Therefore, the detection limit of the secondary electron of scintillator can reduce, and cannot obtain sufficient signal noise ratio.
Summary of the invention
The technical problems to be solved in the utility model overcomes prior art defect, provides a kind of secondary electron detector.
For the technical scheme solving the problems of the technologies described above employing is: a kind of secondary electron detector, comprising: scintillator, absorbs secondary electron and be converted to light; Light conductor is connected with scintillator; And photoelectric conversion device, amplify after the light that scintillator is derived is converted to electronics, and scintillator comprises: substrate, is configured on above-mentioned light conductor; Conducting film is arranged on substrate, and luminescent film is arranged on conducting film, and scintillator also comprises distribution, and distribution is connected with above-mentioned conducting film.
Conducting film is transparent oxide.
Above-mentioned photoelectric conversion device is photomultiplier or semiconductor light-receiving device.
The beneficial effect of this utility model is: the present invention can suppress the detection limit of the secondary electron sent from specimen surface.
Accompanying drawing explanation
Fig. 1 is the skeleton diagram of example of the present invention;
Fig. 2 is architectural overview of the present invention;
Fig. 3 is the A-A sectional view of Fig. 2.
Embodiment
Electron beam device comprises lens barrel portion 10 and sample chamber 18.Lens barrel portion 10 comprises the electron gun 12 producing electron beam (charged particle) EB and the electron-optical system 14 electron beam being exposed to the sample 16 be arranged in sample chamber 18.Containing condenser lens (focusinglens), scanning yoke (scannina coil), object lens (objective lens) etc. in electron-optical system 14.The secondary electron detector 20 detected secondary electron SE is set in sample chamber l 8.As shown in Figure 2, secondary electron detector 20 comprises scintillator 22, light conductor 24 and photoelectric conversion device 26.Secondary electron SE is converted to light after absorbing the secondary electron SE sent from sample 16 surface having irradiated electron beam by scintillator 22.Light conductor 24 makes to penetrate PMT26 through the light of conversion.Photoelectric conversion device 26 amplifies, to generate electric signal after the light of being derived by light conductor 24 is converted to electronics.As photoelectric conversion device 26, the semiconductor light-receiving device etc. such as photomultiplier (photomultiplier tube, PMT) or photodiodes (photo diode), photoelectric crystal (phototransistor) can be used.As shown in Figures 2 and 3, the luminescent film 6 that scintillator 22 comprises that the thickness be configured on light conductor 24 is the substrate 2 of about 100 μm, the conducting film 4 of about thickness 10nm ~ l μm of being placed on substrate 2 and the thickness be arranged on conducting film 4 are about l0nm ~ l00nm.The light sent by luminescent film 6 by injecting of secondary electron SE, is incident upon light conductor 24 after penetrating conducting film 4 and substrate 2.A part in the outer edge of luminescent film 6 arranges multiple connecting portions 8 that conducting film 4 is exposed.Connecting portion 8 is connected with distribution 28, and this distribution 28 is by order to attract the voltage of secondary electron to be supplied to conducting film 4.As conducting film 4, can use the light sent by luminescent film 6 is the transparent oxide of transparent zinc paste, titanium dioxide etc.
Claims (3)
1. a secondary electron detector, is characterized in that comprising: scintillator, absorbs secondary electron and is converted to light; Light conductor is connected with scintillator; And photoelectric conversion device, amplify after the light that scintillator is derived is converted to electronics, and scintillator comprises: substrate, is configured on above-mentioned light conductor; Conducting film is arranged on substrate, and luminescent film is arranged on conducting film, and scintillator also comprises distribution, and distribution is connected with above-mentioned conducting film.
2. secondary electron detector as claimed in claim 1, is characterized in that: conducting film is transparent oxide.
3. secondary electron detector as claimed in claim 1, is characterized in that: above-mentioned photoelectric conversion device is photomultiplier or semiconductor light-receiving device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420711766.6U CN204287085U (en) | 2014-11-24 | 2014-11-24 | Secondary electron detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420711766.6U CN204287085U (en) | 2014-11-24 | 2014-11-24 | Secondary electron detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204287085U true CN204287085U (en) | 2015-04-22 |
Family
ID=52870234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420711766.6U Expired - Fee Related CN204287085U (en) | 2014-11-24 | 2014-11-24 | Secondary electron detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204287085U (en) |
-
2014
- 2014-11-24 CN CN201420711766.6U patent/CN204287085U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20151124 |