CN204258602U - The switching power unit of quasi-resonance control mode - Google Patents
The switching power unit of quasi-resonance control mode Download PDFInfo
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- CN204258602U CN204258602U CN201420457611.4U CN201420457611U CN204258602U CN 204258602 U CN204258602 U CN 204258602U CN 201420457611 U CN201420457611 U CN 201420457611U CN 204258602 U CN204258602 U CN 204258602U
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Abstract
The utility model provides a kind of switching power unit of quasi-resonance control mode, and it reduces switching loss and switching noise by simple structure.The feature of the switching power unit of this quasi-resonance control mode is to have: switch element, and it has capacitive character pressure-resistance structure between the terminal of grid and drain electrode; Test section, it is connected with described capacitive character pressure-resistance structure, detects the opportunity of the voltage free vibration after the retrace interval produced between the terminal of described grid and drain electrode; And drive division, it is connected with described test section, according to output drive signal on described opportunity.
Description
Technical field
The utility model relates to the switching power unit of the quasi-resonance mode that can reduce switching loss and switching noise.
Background technology
As one of the control mode of switching power unit, known quasi-resonance control mode.Which detects the situation becoming the lowest point voltage within the off period of switch element at the voltage drop of the free vibration of drain electrode generation, and make switching elements conductive on this opportunity, thus the switching loss reduced when connecting and noise, the known content recorded at patent documentation 1.
This switching power unit by the primary side circuit of a winding switching with transformer, the secondary side circuit be connected with the secondary winding of transformer, with the auxiliary winding switching of transformer and the lowest point voltage detecting the free vibration after retrace interval formed with the control circuit of control switch element.
Patent documentation 1 Japanese Unexamined Patent Publication 8-289543 publication
In addition, when producing this switching power unit, usually a part for circuit being replaced into semiconductor integrated circuit, and being equipped in compact package, to promote mass production efficiency.
But, in existing switching power unit, the auxiliary winding of transformer is set to detect the lowest point voltage, semiconductor integrated circuit needs the dedicated terminals for being directly connected with auxiliary winding.
Therefore, be difficult to be equipped in the less compact package of number of terminals.In addition, needing the circumferential component connected for detecting the voltage produced at the auxiliary winding of transformer, thus there is the problem hindering cost degradation.
Utility model content
The utility model provides a kind of switching power unit being reduced the quasi-resonance control mode of switching loss and switching noise by simple structure.
According to an aspect of the present utility model, the feature of the switching power unit of quasi-resonance control mode of the present utility model is to have: switch element, and it has capacitive character pressure-resistance structure between the terminal of grid and drain electrode; Test section, it is connected with described capacitive character pressure-resistance structure, detects the opportunity of the voltage free vibration after the retrace interval produced between the terminal of described grid and drain electrode; And drive division, it is connected with described test section, according to output drive signal on described opportunity.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, when described capacitive character pressure-resistance structure is observed with equivalent electric circuit, at least there is the 1st capacity cell and the 2nd capacity cell that are connected in series between the terminal of described grid and described drain electrode.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described test section is connected to the tie point between described 1st capacity cell and described 2nd capacity cell.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described switch element has the semiconductor regions of the 1st conduction type, be formed at the 1st semiconductor layer of the 2nd conduction type in described semiconductor regions, be formed at the 2nd semiconductor layer of the 1st conduction type in described 1st semiconductor layer, 3rd semiconductor layer of the 1st conduction type formed in the mode leaving described 1st semiconductor layer in described semiconductor regions and the gate insulating film be formed on described 1st semiconductor layer, described drain electrode is connected with described 3rd semiconductor layer.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described capacitive character pressure-resistance structure has at least 1 conductive layer formed between described 1st semiconductor layer on described semiconductor regions and described 3rd semiconductor layer.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described test section is connected with described at least 1 conductive layer.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described switch element and described test section and described drive division are formed on same semiconductor substrate.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described switch element is the main switch element of described switching power unit.
According to the switching power unit of the quasi-resonance control mode of a described aspect of the present utility model, it is characterized in that, described switch element is the switch element being contained in starting circuit.
According to the utility model, a kind of switching power unit being reduced the quasi-resonance control mode of switching loss and switching noise by simple structure can be provided.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the structure of the switching power unit representing the 1st execution mode of the present utility model.
Fig. 2 is the profile of the structure of the 1st switch element representing the 1st execution mode of the present utility model.
Fig. 3 is the circuit diagram of the structure of the switching power unit representing the 2nd execution mode of the present utility model.
Symbol description
1 semiconductor regions
2 the 1st semiconductor layers
3 the 2nd semiconductor layers
4 the 3rd semiconductor layers
5 gate insulating films
6 gate electrodes
7 the 1st insulating barriers
10 the 1st field plate layers
11 the 2nd dielectric films
12 the 2nd field plate layers
Tr transformer
Cr resonant capacitor
M1 the 1st module
M2 the 2nd module
CNT1 the 1st control part
CNT2 the 2nd control part
DET test section
DRV drive division
ST starting circuit
SW1 the 1st switch element
SW2 the 2nd switch element
SW3 the 3rd switch element
Cp1 the 1st capacity cell
Cp2 the 2nd capacity cell
Embodiment
Below, with reference to accompanying drawing, execution mode of the present utility model is described.In the description of following accompanying drawing, give same or similar symbol to same or analogous part.Wherein, please note that accompanying drawing is schematic content.In addition, execution mode shown below illustrates the content for the installation method of specific implementation technological thought of the present utility model, and the structure of structure member, configuration etc. are not defined as following content by execution mode of the present utility model.Execution mode of the present utility model can apply various change in the scope of patent claims.
(the 1st execution mode)
Fig. 1 is the circuit diagram of the structure of the switching power unit representing the 1st execution mode of the present utility model.The switching power unit of present embodiment is the switching power unit of quasi-resonance control mode, has transformer Tr, the 1st diode D1, output capacitor C2, the 1st switch element SW1, resonant capacitor Cr, the 1st control part CNT1.1st control part CNT1 is the semiconductor integrated circuit forming multiple semiconductor element formation on single semiconductor substrate.1st switch element SW1 and the 1st control part CNT1 forms the 1st module M1.In addition, switching power unit has diode bridge DB, input capacitor C1, the 2nd diode D2, auxiliary capacitor C3.
Transformer Tr has winding P, a secondary winding S of electromagnetic combination each other, auxiliary winding A.The one end of the DC power portion that one end of a winding P is formed with by diode bridge DB and input capacitor C1 is connected.The other end of a winding P is via the 1st switch element SW1 and resonant capacitor Cr ground connection.One end of secondary winding S is connected with one end of output capacitor C2 via the 1st diode D1.The other end of secondary winding S is connected with the other end of output capacitor C2.1st diode D1 and output capacitor C2 forms rectification partes glabra.One end of auxiliary winding A is connected with one end of auxiliary capacitor C3 via the 2nd diode D2.The other end of auxiliary winding A is connected with the other end of auxiliary capacitor C3 and ground connection.Auxiliary winding A and the 2nd diode D2 and auxiliary capacitor C3 forms the driving power portion of switching power unit.Driving power portion is via each several part supply driving electric power of not shown path to the 1st control part CNT1.
1st switch element SW1 is the main switch element of switching power unit, is the MOSFET between the terminal of grid G and drain D with capacitive character pressure-resistance structure.Grid G is connected with the drive division DRV of the 1st control part CNT1.Drain D is connected with the other end of a winding P.Source S ground connection.When capacitive character pressure-resistance structure is as equivalent electric circuit, at least there is the 1st capacity cell Cp1 and the 2nd capacity cell Cp2 that are connected in series between the terminal of grid G and drain D.Tie point between 1st capacity cell Cp1 with the 2nd capacity cell Cp2 is connected with the test section DET of the 1st control part CNT1.One end of resonant capacitor Cr is connected with the other end of a winding, other end ground connection.That is, resonant capacitor Cr and the 1st switch element SW1 is connected in parallel.
1st control part CNT1 has test section DET, drive division DRV and starting circuit ST.Test section DET is connected with the tie point between the 1st capacity cell Cp1 and the 2nd capacity cell Cp2, detects the opportunity synchronous with the voltage free vibration after the retrace interval produced in grid G.Drive division DRV is connected with test section DET and the 1st switch element SW1.On the opportunity that drive division DRV detects according to test section DET, the prediction next time of voltage free vibration is later the lowest point opportunity near the voltage of the lowest point, and to the 1st switch element SW1 output drive signal.In addition, drive division DRV has not shown output voltage test section and current detecting part, makes the both end voltage of output capacitor C2 be that constant mode carries out ON-OFF driving to the 1st switch element SW1.Starting circuit ST is connected with the other end of a winding P and one end of auxiliary capacitor C3, receives and supplies to the direct current power of the 1st control part CNT1 from AC power Vac via above-mentioned DC power portion, controls the charging of auxiliary capacitor C3.
Fig. 2 is the profile of the structure of the 1st switch element SW1 representing the 1st execution mode of the present utility model.1st switch element SW1 has semiconductor regions 1, the 1st semiconductor layer 2, the 2nd semiconductor layer 3, the 3rd semiconductor layer 4, gate insulating film 5.
Semiconductor regions 1 is the conduction type of N-type, is formed by epitaxial growth or Impurity Diffusion.1st semiconductor layer 2 is the conduction type of P type, is formed by the selectivity Impurity Diffusion on semiconductor regions 1 surface.2nd semiconductor layer 3 is source regions of the conduction type of N-type, is formed by the selectivity Impurity Diffusion on the 1st semiconductor layer 2 surface.3rd semiconductor layer 4 is drain regions of the conduction type of N-type, is formed by the selectivity Impurity Diffusion on semiconductor regions 1 surface.
Gate insulating film 5 is formed in the mode on the surface covering the 1st semiconductor layer 2 be present between the 2nd semiconductor layer 3 and the 3rd semiconductor layer 4.Gate electrode 6 is formed in the mode relative with the 1st semiconductor layer 2 across gate insulating film 5.1st insulating barrier 7 has the peristome of expectation, with cover semiconductor regions 1 and the 1st semiconductor layer 2, the 2nd semiconductor layer 3, the 3rd semiconductor layer 4 the mode on surface formed.Source electrode 8 and drain electrode 9 are formed in the mode be electrically connected with the 2nd semiconductor layer 3 and the 3rd semiconductor layer 4 respectively.
1st field plate layer 10 is made up of multiple conductive layer, is formed as relative with semiconductor regions 1 across the 1st dielectric film 7 be present between the 1st semiconductor layer 2 with the 3rd semiconductor layer 4.2nd insulating barrier 11 has the peristome of expectation, is formed in the mode on the surface of covering grid electrode 6, the 1st dielectric film 7, source electrode 8, drain electrode 9.2nd field plate layer 12 is made up of multiple conductive layer, to be formed with gate electrode 6, mode that drain electrode 9 is relative with the 1st field plate layer 10 across the 2nd dielectric film 11.Closest to the 2nd field plate layer 12 and gate electrode 6 capacitive coupling of gate electrode 6.Closest to the 2nd field plate layer 12 and drain electrode 9 capacitive coupling of drain electrode 9.Therefore, by these structures, the parasitic capacitance shown in dotted line is arranged between gate electrode 6 and drain electrode 9, carries out capacitive coupling between these electrodes.
1st capacity cell Cp1 and the 2nd capacity cell Cp2 of the present embodiment have 8 parasitic capacitances.1st capacity cell Cp1 and the 2nd capacity cell Cp2, when the 1st switch element SW1 is cut-off state, carries out dividing potential drop to the voltage be applied between gate electrode 6 and drain electrode 9, the 1st switch element SW1 is realized high withstand voltage.Test section DET is connected with 1 in the 2nd field plate layer 12, detects voltage between the gate/drain obtained by the 1st capacity cell Cp1 and the 2nd capacity cell Cp2 dividing potential drop.
The following describes the action of the switching power unit of the present embodiment.After switching power unit supply AC power Vac, it is level and smooth that DC power portion carries out rectification to AC power Vac, supplies direct current power via a winding P to the 1st module M1.Starting circuit ST becomes conducting state when the both end voltage of auxiliary capacitor C3 is less than setting, is charged to auxiliary capacitor C3 by above-mentioned direct current power.If the both end voltage of auxiliary capacitor C3 is more than setting, then drive division DRV starts the ON-OFF driving carrying out the 1st switch element SW1.
When the 1st switch element SW1 is in conducting state, at transformer Tr energy accumulation.If the 1st switch element SW1 becomes cut-off state from conducting state, then the energy accumulated when conducting in transformer Tr discharges via secondary winding S.During this energy of release in (retrace interval), be applied to the drain electrode of the 1st switch element SW1 at the voltage (flyback voltage) of a winding P generation.
After retrace interval terminates, by inductance composition and the resonant capacitor Cr of a winding P of transformer Tr, the voltage (free vibration voltage) with free vibration waveform is applied to the drain electrode of the 1st switch element SW1.Now, the voltage that the tie point between the 1st capacity cell Cp1 and the 2nd capacity cell Cp2 produces becomes the voltage (dividing potential drop vibration voltage) with the amplitude waveform different from the voltage of free vibration.Test section DET detects the opportunity become with the opportunity of the Vibration Synchronization of free vibration voltage, specifically free vibration voltage near the lowest point voltage (minimum) according to dividing potential drop vibration voltage, timing signals is exported to drive division DRV.
Drive division DRV, according to the timing signals exported from test section DET, to the grid output drive signal of the 1st switch element SW1, makes the 1st switch element SW1 conducting.After the 1st switch element SW1 becomes conducting state, transformer Tr is excited, and the drain current of switch element SW1 starts to increase.Drive division DRV, according to the both end voltage of the output capacitor C2 detected via output voltage test section and the drain current of the 1st switch element SW1 that detects via current detecting part, makes the 1st switch element SW1 end.
The switching power unit of quasi-resonance control mode according to the present embodiment, according to the voltage that the capacitive character pressure-resistance structure between the gate/drain parasitizing the 1st switch element SW1 produces, detection free vibration voltage becomes the opportunity near the lowest point voltage (minimum).Therefore, without the need to adding the circumferential component for detecting the lowest point voltage at switching power unit, a kind of switching power unit being reduced the quasi-resonance control mode of switching loss and switching noise by simple structure can be provided.
In addition, the lowest point voltage of free vibration voltage is carry out detecting according to the voltage obtained by the 1st capacity cell Cp1 and the 2nd capacity cell Cp2 dividing potential drop opportunity.Therefore, by the structure of the 1st capacity cell Cp1 and the 2nd capacity cell Cp2, between gate/drain, voltage is the lowest point voltage opportunity also easily detecting free vibration voltage in high-tension situation.And then compared to the mode of voltage between gate/drain being carried out to electric resistance partial pressure, consumed power is minimized, and thus can make switching power unit high efficiency.
(the 2nd execution mode)
Fig. 3 is the circuit diagram of the structure of the switching power unit of the quasi-resonance control mode representing the 2nd execution mode of the present utility model.The switching power unit of present embodiment forms the 2nd module M2, has the 2nd switch element SW2 and the 2nd control part CNT2.2nd switch element SW2 has arbitrary pressure-resistance structure.Control part CNT2 is the semiconductor integrated circuit forming multiple semiconductor element formation on single semiconductor substrate, has test section DET, drive division DRV and starting circuit ST.
The test section DET of present embodiment has comparator CMP and reference voltage source Vref, is connected with the capacitive character pressure-resistance structure of the 3rd switch element SW3.The reversion terminal of comparator CMP is connected with reference voltage source Vref.The tie point of non-inverting terminal sub-connection between the 1st capacity cell Cp1 forming capacitive character pressure-resistance structure and the 2nd capacity cell Cp2 of comparator CMP.The magnitude of voltage of reference voltage source Vref is set to the low-down voltage close to zero volt.Comparator CMP is compared voltage and reference voltage source Vref between the gate/drain obtained by the 1st capacity cell Cp1 and the 2nd capacity cell Cp2 dividing potential drop, and detection free vibration voltage becomes the opportunity near the lowest point voltage (minimum).
Starting circuit ST has the 3rd switch element SW3 and resistance R that possess capacitive character pressure-resistance structure.3rd switch element SW3 is contained in starting circuit ST, is the MOSFET with the structure same with the 1st switch element SW1.That is, the 3rd switch element SW3 at least have be series at grid G and drain D terminal between the 1st capacity cell Cp1 and the 2nd capacity cell Cp2.Drain D is connected with the drain electrode of the 2nd switch element SW2.Source S is connected with one end of auxiliary capacitor C3 via opposing R.Grid G have input the drive singal of the both end voltage based on auxiliary capacitor C3.That is, the 3rd switch element SW3 and opposing R forms constant-current circuit, and the 3rd switch element SW3 is by Linear Control.
When the both end voltage of auxiliary capacitor C3 is less than setting, constant-current circuit generates the constant current after being adjusted by resistance R, charges to auxiliary capacitor C3.With the rising of the both end voltage of the auxiliary capacitor C3 caused that charges, the constant current that constant-current circuit generates reduces, and when the both end voltage of auxiliary capacitor C3 is more than setting, the 3rd switch element SW3 is controlled so as to as dissengaged positions.Meanwhile, drive division DRV starts the ON-OFF driving carrying out the 2nd switch element SW2.After the driving of the 2nd switch element SW2 starts, auxiliary capacitor C3 is charged by the voltage produced at auxiliary winding A.
When the 3rd switch element SW3 is dissengaged positions, the voltage of the tie point between the 1st capacity cell Cp1 to the 2nd capacity cell Cp2 and the drain voltage of the 2nd switch element SW2 are directly proportional.Therefore, in a same manner as in the first embodiment, test section DET can detect the opportunity with the Vibration Synchronization of free vibration voltage according to dividing potential drop vibration voltage.In addition, the switching power unit of quasi-resonance control mode according to the present embodiment, by the 3rd switch element SW3, test section DET and drive division DRV are configured to semiconductor integrated circuit, a kind of switching power unit being reduced the quasi-resonance control mode of switching loss and switching noise by simple structure can be provided.
As mentioned above, by execution mode, the utility model is described, but the discussion of a part for formation the disclosure content and accompanying drawing are not intended to limit the utility model.According to the disclosure content, those skilled in the art should be able to specify various alternate embodiments, embodiment and application technology.That is, the utility model also comprises the various execution modes etc. wherein do not described certainly.Therefore, technical scope of the present utility model should to be determined by the specific item of the utility model of the scope of suitable claims based on above-mentioned explanation.Such as, the DC power portion be made up of AC power Vac, diode bridge DB and input capacitor C1 is replaceable is Switching Power Supply and storage battery.In addition, the 1st switch element SW1 and the 1st control part CNT1 both can be respectively independent module, also can form single semiconductor integrated circuit.
Claims (9)
1. a switching power unit for quasi-resonance control mode, is characterized in that, has:
Switch element, it has capacitive character pressure-resistance structure between the terminal of grid and drain electrode;
Test section, it is connected with described capacitive character pressure-resistance structure, detects the opportunity of the voltage free vibration after the retrace interval produced between the terminal of described grid and drain electrode; And
Drive division, it is connected with described test section, according to output drive signal on described opportunity.
2. the switching power unit of quasi-resonance control mode according to claim 1, is characterized in that,
When described capacitive character pressure-resistance structure is observed with equivalent electric circuit, at least there is the 1st capacity cell and the 2nd capacity cell that are connected in series between the terminal of described grid and described drain electrode.
3. the switching power unit of quasi-resonance control mode according to claim 2, is characterized in that,
Described test section is connected to the tie point between described 1st capacity cell and described 2nd capacity cell.
4. the switching power unit of quasi-resonance control mode according to claim 3, is characterized in that,
Described switch element has the semiconductor regions of the 1st conduction type, the 1st semiconductor layer of the 2nd conduction type be formed in described semiconductor regions, the 2nd semiconductor layer being formed at the 1st conduction type in described 1st semiconductor layer, the 3rd semiconductor layer of the 1st conduction type formed in the mode leaving described 1st semiconductor layer in described semiconductor regions and the gate insulating film be formed on described 1st semiconductor layer, and described drain electrode is connected with described 3rd semiconductor layer.
5. the switching power unit of quasi-resonance control mode according to claim 4, is characterized in that,
Described capacitive character pressure-resistance structure has at least 1 conductive layer formed between described 1st semiconductor layer on described semiconductor regions and described 3rd semiconductor layer.
6. the switching power unit of quasi-resonance control mode according to claim 5, is characterized in that,
Described test section is connected with described at least 1 conductive layer.
7. the switching power unit of quasi-resonance control mode according to claim 6, is characterized in that,
Described switch element and described test section and described drive division are formed on same semiconductor substrate.
8. the switching power unit of quasi-resonance control mode according to claim 7, is characterized in that,
Described switch element is the main switch element of described switching power unit.
9. the switching power unit of quasi-resonance control mode according to claim 7, is characterized in that,
Described switch element is the switch element being contained in starting circuit.
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| CN201420457611.4U CN204258602U (en) | 2014-08-14 | 2014-08-14 | The switching power unit of quasi-resonance control mode |
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| CN201420457611.4U CN204258602U (en) | 2014-08-14 | 2014-08-14 | The switching power unit of quasi-resonance control mode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684847B (en) * | 2018-11-14 | 2020-02-11 | 台達電子工業股份有限公司 | Current detection circuit of power converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI684847B (en) * | 2018-11-14 | 2020-02-11 | 台達電子工業股份有限公司 | Current detection circuit of power converter |
| US11525848B2 (en) | 2018-11-14 | 2022-12-13 | Delta Electronics, Inc. | Current detecting circuit of power converter |
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