CN204258289U - A kind of IGBT overvoltage crowbar with high-power energy relieving capacity - Google Patents
A kind of IGBT overvoltage crowbar with high-power energy relieving capacity Download PDFInfo
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- CN204258289U CN204258289U CN201420828667.6U CN201420828667U CN204258289U CN 204258289 U CN204258289 U CN 204258289U CN 201420828667 U CN201420828667 U CN 201420828667U CN 204258289 U CN204258289 U CN 204258289U
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Abstract
Name of the present utility model is called a kind of IGBT overvoltage crowbar with high-power energy relieving capacity.Belong to electric machine speed regulation technical field.Mainly solve the problem of existing overvoltage crowbar because of can not release completely energy so that voltage rising scaling loss IGBT.Its principal character is: comprise by the current-limiting resistance be connected in series, counnter attack diode, breakdown diode, the 3rd resistance and be attempted by the electric voltage observation circuit that the second resistance on breakdown diode forms; The leadage circuit be made up of controllable silicon, leadage circuit and electric voltage observation circuit also connect; The thyristor gating circuit be made up of the voltage stabilizing didoe be connected in series, the second diode and the 3rd diode, thyristor gating circuit is attempted by the 3rd resistance two ends, and the second diode controls extremely to be connected with silicon controlled with the negative electrode of the 3rd diode.The utility model has fast detecting overvoltage, and namely reach protection threshold values provides energy leakage path, thus avoids the feature of IGBT scaling loss, is mainly used in the overvoltage protection of IGBT module in rotor frequency conversion speed-adjusting system.
Description
Technical field
The utility model belongs to electric machine speed regulation technical field, relates to power device protective circuit, particularly a kind of IGBT overvoltage crowbar.
Background technology
Rotor frequency conversion speed-adjusting system is by presenting winding by motor slip power feedback grid or motor, reach the object regulating motor speed, because its needs control motor slip power, compare the capacity of power of motor needed for it greatly to reduce, so be a kind of governing system efficiently, be widely used in asquare torque load fields such as blower fan water pumps, achieve good energy-saving effect.In known technology, existing rotor frequency conversion speed-adjusting system mainly adopts three-phase bridge rectifier circuit that rotor windings output potential is rectified into direct current, then the copped wave booster circuit through IGBT, inductance, diode and voltage composition raises direct voltage, then presents winding in the three-phase inverting circuit inversion telegram in reply net that is made up of controllable silicon or IGBT or motor.After electrical network flickering, power failure or other reason cause inversion circuit fault, the energy gathered in DC loop cannot feedback grid or presented winding consumption in motor, and the electromagnetic energy in rotor winding also continues through rectification circuit flows to DC loop, cause DC loop voltage to raise, cause IGBT overvoltage scaling loss.Traditional IGBT overpressure absorbing circuit can only absorb limited energy as piezo-resistance, resistance-capacitance absorption etc. because of it, does not reach protective effect in the case.
Summary of the invention
The purpose of this utility model is for the deficiencies in the prior art; a kind of fast detecting overvoltage is provided; after voltage reaches protection threshold values, provide energy leakage path simultaneously; voltage is avoided to continue the circuit raised; finally reach the object that protection IGBT can not damage because of inversion fault, thus improve the reliability of frequency conversion system of rotor.
Technical solution of the present utility model is: a kind of IGBT overvoltage crowbar with high-power energy relieving capacity, is characterized in that: comprise by the current-limiting resistance be connected in series, counnter attack diode, breakdown diode, the 3rd resistance and be attempted by the electric voltage observation circuit 1 that the second resistance on breakdown diode forms; The leadage circuit be made up of controllable silicon, leadage circuit and electric voltage observation circuit also connect; The thyristor gating circuit be made up of the voltage stabilizing didoe be connected in series, the second diode and the 3rd diode, the negative electrode of the second diode and the 3rd diode connects, thyristor gating circuit is attempted by the 3rd resistance two ends, and the second diode controls extremely to be connected with silicon controlled with the negative electrode of the 3rd diode.
The utility model is owing to adopting by electric voltage observation circuit, the IGBT overvoltage crowbar that thyristor gating circuit and leadage circuit are formed, wherein, electric voltage observation circuit is by the current-limiting resistance R1 be connected in series, counnter attack diode D1, breakdown diode BOD1, 3rd resistance R3, and the second resistance R2 be attempted by breakdown diode BOD1 is formed, leadage circuit is made up of controllable silicon V1, leadage circuit and electric voltage observation circuit 1 also connect, thyristor gating circuit 2 is by the voltage stabilizing didoe D4 be connected in series, second diode D2 and the 3rd diode D3 is formed, the negative electrode of the second diode D2 and the 3rd diode D3 connects, thyristor gating circuit 2 is attempted by the 3rd resistance R3 two ends, second diode D2 is extremely connected with the control of controllable silicon V1 with the negative electrode of the 3rd diode D3, thus when the utility model is connected on IGBT module T1, if when the voltage on IGBT module T1 exceedes the threshold values of voltage detecting circuit, electric voltage observation circuit 1 can produce a voltage at the 3rd resistance, be added between the control pole of controllable silicon V1 and negative electrode by thyristor gating circuit 2, make controllable silicon V1 conducting, because controllable silicon has the large characteristic of through-current capability, the energy of DC loop is released by controllable silicon, short circuit IGBT, thus avoid the scaling loss of IGBT.The utility model has fast detecting overvoltage, and namely reach protection threshold values provides energy leakage path, thus avoids the feature of IGBT scaling loss.The utility model is mainly used in the overvoltage protection of IGBT module in rotor frequency conversion speed-adjusting system, improves the reliability of frequency conversion system of rotor.
Accompanying drawing explanation
Fig. 1 is the circuit diagram that the utility model uses.
In figure: 1 is electric voltage observation circuit; 2 is thyristor gating circuit.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in further detail.
As shown in Figure 1, a kind of IGBT overvoltage crowbar with high-power ability relieving capacity disclosed in the utility model, comprise and connect electric voltage observation circuit 1, thyristor gating circuit 2, controllable silicon V1 successively, controllable silicon V1 forms leadage circuit.The utility model IGBT overvoltage crowbar is connected to collector electrode and the emitter two ends of IGBT module T1 to be protected.
Electric voltage observation circuit 1 comprises current-limiting resistance R1, counnter attack diode D1, breakdown diode BOD1, the second resistance R2 and the 3rd resistance R3, current-limiting resistance R1 one end is connected with the collector electrode of IGBT module T1, the other end is connected with the anode of counnter attack diode D1, the negative electrode of counnter attack diode D1 is connected with breakdown diode BOD1 anode, the negative electrode of breakdown diode BOD1 is connected with the 3rd resistance R3 one end, the other end of the 3rd resistance R3 is connected with the emitter of IGBT module T1, and the second resistance R2 is parallel to the two ends of breakdown diode BOD1.
Thyristor gating circuit 2 comprises voltage stabilizing didoe D4, the second diode D2 and the 3rd diode D3, the negative electrode of voltage stabilizing didoe D4 is connected with the negative electrode of the breakdown diode BOD1 of electric voltage observation circuit 1, the anode of voltage stabilizing didoe D4 is connected with the anode of the second diode D2, the negative electrode of the second diode D2 is extremely connected with the control of controllable silicon V1, the negative electrode of the 3rd diode D3 is extremely connected with the control of controllable silicon V1, and anode is connected with the negative electrode of controllable silicon V1.
The anode of controllable silicon V1 is connected with IGBT module T1 collector electrode, and negative electrode is connected with the emitter of IGBT module T1, controls pole and is connected with the negative electrode of thyristor gating circuit second diode D2.
In electric voltage observation circuit 1, breakdown diode BOD1 is when its both end voltage is less than breakover voltage, cut-off state will be in, when voltage exceedes breakover voltage, then change conducting state into rapidly, when breakdown diode BOD1 is in cut-off state, because the resistance of the second resistance R2 in circuit is much larger than the resistance of current-limiting resistance R1 and the 3rd resistance R3, the voltage myopia at the second resistance R2 and the breakdown diode BOD1 two ends in parallel with it equals the voltage at IGBT module T1 two ends, the voltage at the 3rd resistance R3 two ends is about 0, voltage stabilizing didoe D4 then in thyristor gating circuit 2 is in cut-off state, controllable silicon V1 controls between pole and negative electrode without forward voltage, controllable silicon V1 is in cut-off state.When IGBT module voltage raises, the voltage also corresponding rising at breakdown diode BOD1 two ends, when voltage exceedes the breakover voltage of breakdown diode BOD1, breakdown diode BOD1 changes conducting state at once, now breakdown diode BOD1 short circuit, current-limiting resistance R1 becomes bleeder circuit with the 3rd resistor group, the voltage at the 3rd resistance R3 two ends raises, exceed the reverse breakdown voltage of voltage stabilizing didoe D4, voltage stabilizing didoe D4 is made to be transformed into conducting state from cut-off state, second diode D2 forward conduction simultaneously, controllable silicon V1 controls to bear forward voltage between pole and negative electrode, make controllable silicon V1 conducting, after controlled silicon conducting, IGBT module is by controllable silicon short circuit, voltage reduces to 0, no longer hold high voltage, then can not because of overvoltage generation scaling loss.Current-limiting resistance R1 in figure in overvoltage observation circuit 1 plays metering function, after breakdown diode BOD1 conducting, can limit the size of the electric current of the control pole flowing through controllable silicon V1.In thyristor gating circuit, the 3rd diode D3 plays clamping action, clamps down on the voltage between the control pole of controllable silicon V1 and negative electrode, prevents the control pole tension of controllable silicon V1 too high and damages controllable silicon V1.
Claims (1)
1. there is an IGBT overvoltage crowbar for high-power energy relieving capacity, it is characterized in that: comprise by the current-limiting resistance be connected in series (R1), counnter attack diode (D1), breakdown diode (BOD1), the 3rd resistance (R3) and be attempted by the electric voltage observation circuit (1) that the second resistance (R2) on breakdown diode (BOD1) forms; The leadage circuit be made up of controllable silicon (V1), leadage circuit and electric voltage observation circuit (1) also connect; The thyristor gating circuit (2) be made up of the voltage stabilizing didoe be connected in series (D4), the second diode (D2) and the 3rd diode (D3), the negative electrode of the second diode (D2) and the 3rd diode (D3) connects, thyristor gating circuit (2) is attempted by the 3rd resistance (R3) two ends, and the second diode (D2) is extremely connected with the control of controllable silicon (V1) with the negative electrode of the 3rd diode (D3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420828667.6U CN204258289U (en) | 2014-12-24 | 2014-12-24 | A kind of IGBT overvoltage crowbar with high-power energy relieving capacity |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420828667.6U CN204258289U (en) | 2014-12-24 | 2014-12-24 | A kind of IGBT overvoltage crowbar with high-power energy relieving capacity |
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| Publication Number | Publication Date |
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| CN204258289U true CN204258289U (en) | 2015-04-08 |
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| CN201420828667.6U Active CN204258289U (en) | 2014-12-24 | 2014-12-24 | A kind of IGBT overvoltage crowbar with high-power energy relieving capacity |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868457A (en) * | 2014-12-24 | 2015-08-26 | 万洲电气股份有限公司 | IGBT overvoltage protective circuit capable of large-power energy discharge |
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- 2014-12-24 CN CN201420828667.6U patent/CN204258289U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104868457A (en) * | 2014-12-24 | 2015-08-26 | 万洲电气股份有限公司 | IGBT overvoltage protective circuit capable of large-power energy discharge |
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