CN204257698U - Light emitting device - Google Patents
Light emitting device Download PDFInfo
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- CN204257698U CN204257698U CN201420772572.7U CN201420772572U CN204257698U CN 204257698 U CN204257698 U CN 204257698U CN 201420772572 U CN201420772572 U CN 201420772572U CN 204257698 U CN204257698 U CN 204257698U
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The utility model provides a light-emitting device, including first base plate, dispose in first base plate and expose first base plate and adhere second base plate, luminous semiconductor component, dispose in the block structure and the adhesion layer of gluing the district. The first substrate comprises a first base and an electrode pattern arranged on the first base. The second substrate comprises a second base, a conductive pattern arranged on the second base and a conductive through hole penetrating through the second base and coupled with the conductive pattern. The light-emitting semiconductor component is configured on the second substrate and can be electrically connected with an external power supply through the conductive pattern, the conductive through hole and the electrode pattern. The barrier structure surrounds the second substrate and the light-emitting semiconductor component. The adhesion layer is located between the barrier structure and the first substrate. The barrier structure is separated from the second substrate by a distance R in a direction parallel to the first substrate, wherein R is greater than 0 and less than or equal to 0.3 mm.
Description
Technical field
The utility model relates to a kind of light-emitting device, and particularly a kind of semiconductor light-emitting apparatus, belongs to technical field of semiconductors.
Background technology
The principle of luminosity of light-emitting semi-conductor components as light-emitting diode (LED) chip utilizes the distinctive character of semiconductor, and be different from the principle of luminosity of general fluorescent lamp or incandescent lamp heating.Therefore, light-emitting semi-conductor components has life-span long, the advantage such as power consumption is low, and widely popularly used.
Generally speaking, adopt light-emitting semi-conductor components as the light-emitting device of light source, light-emitting semi-conductor components is arranged at there is a bowl lead frame for cup-shaped groove, then on light-emitting semi-conductor components, packing colloid is covered, to protect light-emitting semi-conductor components, some technology can add fluorescent material in packing colloid, with by light-emitting semi-conductor components send particular range of wavelengths light be converted to the light of another wave-length coverage, and making light-emitting device be able to send as white light or other coloured light according to different application, such as Chinese invention patent application publication number CN103022324A discloses; Also technology is had to be arranged at by light-emitting semi-conductor components on substrate and have in the given plane region of framework around, its middle frame is directly connected with substrate and is centered around around light-emitting semi-conductor components using the barrier structure as packing colloid, and then packing colloid is covered on light-emitting semi-conductor components, such as Chinese invention patent application publication number CN102544325A or U.S. patent Nos US8373182 disclosed.
The heat energy produced when luminescence due to light-emitting semi-conductor components can impact the life-span of light-emitting semi-conductor components, and therefore light-emitting semi-conductor components can directly be configured on expensive heat-radiating substrate usually.In the prior art, because framework or barrier structure and light-emitting semi-conductor components are configured on same heat-radiating substrate, therefore substrate need sacrifice the area of a part to arrange framework or barrier structure, even substrate and framework integrated, and cause the use of heat-radiating substrate to waste; Simultaneously due to limited space that substrate and framework or barrier structure are formed, so the routing processing procedure on the height meeting butt welding sending and receiving optical semiconductor assembly to substrate of barrier structure or between light-emitting semi-conductor components impacts, and also easily have the situation of excessive glue to produce when covering packing colloid, therefore difficulty on processing procedure and complexity increase, the production yield of light-emitting device and cost are impacted.
Summary of the invention
For overcoming the shortcoming of prior art, one of the purpose of this utility model is to provide a kind of light-emitting device and manufacture method thereof, can save substrate material, and reduction manufacturing cost, promotes the yield of light-emitting device.
For realizing one of above-mentioned utility model object, the utility model one execution mode provides a kind of light-emitting device, comprising:
First substrate;
Second substrate, is configured on described first substrate;
Barrier structure, is configured on described first substrate, and surrounds described second substrate;
At least one light-emitting semi-conductor components, is configured on described second substrate; And
Packing colloid, is configured between described light-emitting semi-conductor components and described barrier structure;
Wherein, described barrier structure on the direction being parallel to described first substrate with described second substrate standoff distance R, and the inserting between described barrier structure and described second substrate in described distance R at least partially of described packing colloid.
As the further improvement of the utility model one execution mode, described distance R is: 0 < R≤0.3 mm.
As the further improvement of the utility model one execution mode, described distance R equals 0.1mm.
As the further improvement of the utility model one execution mode, described packing colloid surrounds described light-emitting semi-conductor components and exposes the light-emitting area of described light-emitting semi-conductor components.
As the further improvement of the utility model one execution mode, described packing colloid comprises reflectorized material.
As the further improvement of the utility model one execution mode, described light-emitting semi-conductor components has optical wavelength converting layer.
As the further improvement of the utility model one execution mode, described light-emitting semi-conductor components has the first height H 1 on the direction vertical with described first substrate, described barrier structure more described second substrate on the described direction vertical with described first substrate exceeds the second height H 2, wherein H1 < H2≤(3*H1).
As the further improvement of the utility model one execution mode, the material of described barrier structure comprises light absorbing material.
As the further improvement of the utility model one execution mode, described first substrate comprises the first substrate, and electrode pattern is configured in described first substrate; Described second substrate comprises the second substrate, conductive pattern is configured in described second substrate, and one group of conductive through hole, described conductive pattern couples described one group of conductive through hole, and described one group of conductive through hole is arranged in described second substrate and relative with described first suprabasil electrode pattern at least partially.
As the further improvement of the utility model one execution mode, first electrode of described light-emitting semi-conductor components and the second electrode are arranged on relative two of described light-emitting semi-conductor components respectively, and described first electrode and described second electrode one of them by described conductive pattern and described one group of one of them electric property coupling of conductive through hole.
As the further improvement of the utility model one execution mode, first electrode of described light-emitting semi-conductor components and the second electrode are arranged on the surface of described light-emitting semi-conductor components the same side respectively, and described first electrode and described second electrode one of them by described conductive pattern and described one group of one of them electric property coupling of conductive through hole.
As the further improvement of the utility model one execution mode, what described second substrate exposed described first substrate sticks together district, to stick together described in described barrier structure is configured in district and to expose the light-emitting area of described light-emitting semi-conductor components, and described barrier structure has composition surface towards described first substrate and parallel with described first substrate; And described light-emitting device also comprises adhesion layer, to contact with described composition surface and described first substrate between described composition surface with described first substrate.
For realizing one of above-mentioned utility model object, the utility model one embodiment further provides a kind of light-emitting device, comprising:
First substrate;
Second substrate, is configured on described first substrate;
Barrier structure, is configured on described first substrate, and surrounds described second substrate;
At least one light-emitting semi-conductor components, is configured on described second substrate; And
Packing colloid, is filled between described light-emitting semi-conductor components and described barrier structure;
Wherein, described light-emitting semi-conductor components has the first height H 1 on the direction vertical with described first substrate, described barrier structure more described second substrate on the described direction vertical with described first substrate exceeds the second height H 2, wherein H1 < H2≤(3*H1).
Compared with prior art, in light-emitting device of the present utility model, due to barrier structure be configured in carrying light-emitting semi-conductor components second substrate by, namely light-emitting device utilizes first substrate to carry barrier structure, and therefore second substrate carries without the need to reserved area or volume or forms barrier structure.Thus, the second substrate occupation mode that cost is high can be more efficient, and reduce consumption and material cost, and the cost contributing to light-emitting device reduces.Simultaneously, in light-emitting device of the present utility model, between barrier structure and second substrate, also leave interval further, and arranged in pairs or groups by the height that barrier structure is optimized, allow the processing procedure difficulty that light-emitting semi-conductor components and packing colloid are set be simplified, and contribute to manufacture and the Yield lmproved of light-emitting device.
Accompanying drawing explanation
Figure 1A to Fig. 1 E is the cutaway view of light-emitting device in manufacturing process different phase of the utility model one embodiment;
Fig. 2 A to Fig. 2 E is the vertical view of light-emitting device in manufacturing process different phase of the utility model one embodiment;
Fig. 3 is the cutaway view of Fig. 2 B along B-B ';
Fig. 4 is the cutaway view of Fig. 2 D along C-C ';
Fig. 5 is the cutaway view of Fig. 2 E along D-D '.
Embodiment
Below with reference to each execution mode shown in the drawings, the utility model is described in detail.But these execution modes do not limit the utility model, the structure that those of ordinary skill in the art makes easily according to these execution modes, method or conversion functionally are all included in protection range of the present utility model.
Figure 1A to Fig. 1 E is the cutaway view of light-emitting device in manufacturing process different phase of the utility model one embodiment.Fig. 2 A to Fig. 2 E is the vertical view of light-emitting device in manufacturing process different phase of the utility model one embodiment.Particularly, Figure 1A to Fig. 1 E is the hatching line A-A ' corresponding to Fig. 2 A to Fig. 2 E.Please refer to Figure 1A and Fig. 2 A, first, provide first substrate 102.The electrode pattern 102c that first substrate 102 comprises the first substrate 102b and is configured on the first substrate 102b.In the present embodiment, for making to ask light-emitting device of the present utility model to have better radiating effect, first substrate 102 can be metallic core printed circuit board (PCB) (metal core printed circuit board, MCPCB).Concrete, the material of the first substrate 102b can comprise metal, such as copper, aluminium, copper alloy or aluminium alloy etc.First substrate 102b can have boss portion 102e and platform part 102f.Platform part 102f is arranged at boss portion 102e side and caves in relative to boss portion 102e, namely the thickness of platform part 102f is less than the thickness of boss portion 102e, but not as limit, such as in other embodiment of the utility model, the thickness of platform part 102f also can be more than or equal to the thickness of boss portion 102e.First substrate 102 also comprises insulating barrier 102d.The platform part 102f that insulating barrier 102d is configured in the first substrate 102b exposes boss portion 102e.Partial insulative layer 102d is located between electrode pattern 102c and the first substrate 102b, is electrically insulated to make electrode pattern 102c and the first substrate 102b.It should be noted that, the above-mentioned description about first substrate 102 illustrates the utility model, and be not used to limit the utility model, and in other embodiments, first substrate 102 also can be the circuit board of other appropriate formats.
Please refer to Figure 1B and Fig. 2 B, then, engage first substrate 102 and second substrate 104.When first substrate 102 engages with second substrate 104, first substrate 102 also can be electrically connected with second substrate 104 simultaneously.Fig. 3 is below coordinated to describe it in detail.Fig. 3 is the cutaway view of Fig. 2 B along B-B '.Please refer to Figure 1B, Fig. 2 B and Fig. 3, second substrate 104 comprises the second substrate 104a, be configured at conductive pattern 104b on the second substrate 104a and at least one group of conductive through hole 104c.Often organize conductive through hole 104c and can comprise one or more (two and more than) conductive through hole 104c.In the present embodiment, the multiple conductive through hole 104c often organizing conductive through hole 104c are electrically connected with the first electrode 110d of light-emitting semi-conductor components 110 and the second electrode 110b respectively, are described in detail below with reference to Fig. 2 D and Fig. 4.Each conductive through hole 104c is arranged in the second substrate 104a, and is electrically coupled to conductive pattern 104b.As shown in Figure 3, when first substrate 102 engages with second substrate 104, conductive through hole 104c can be electrically connected with electrode pattern 102c, and first substrate 102 and second substrate 104 are electrically connected.In addition, as shown in Figure 2 C, in the present embodiment, it is closely adjacent that conductive pattern 104b comprises multiple ㄣ shape pattern, and multiple L shape pattern setting surrounds ㄣ shape pattern around second substrate 104, so, emitting semiconductor 110 namely can most compact fashion configuration, and make full use of the high heat conduction function of second substrate 104, what increase the utility model light-emitting device goes out luminous intensity simultaneously.
Please refer to Figure 1B, Fig. 2 B and Fig. 3, after first substrate 102 engages with second substrate 104, second substrate 104 to be configured on first substrate 102 and expose first substrate 102 stick together district 102a.Concrete, in the present embodiment, second substrate 104 is configurable on the boss portion 102e of first substrate 102, and exposes at least part of platform part 102f of first substrate 102.The light-emitting semi-conductor components 110 be configured on second substrate 104 can be overlapping with boss portion 102e, therefore the heat energy produced when light-emitting semi-conductor components 110 is luminous can quickly move through the good second substrate of heat-sinking capability 104 and be passed to outside light-emitting device 100 with boss portion 102e, and then extends the useful life of light-emitting device 100.In the present embodiment, stick together district 102a and can be annular section, such as hollow region.The material of the second substrate 104a of second substrate 104 can comprise the materials such as sapphire, silicon, carborundum, diamond or aluminium nitride (AlN).But the utility model is not limited with above-mentioned, in other embodiments, other suitable designs are done in all visual actual demand of material of the shape and the second substrate 104a of sticking together district 102a.
As shown in Figure 3, after first substrate 102 engages with second substrate 104, the conductive through hole 104c of second substrate 104 is relative with the electrode pattern 102c at least partially on the first substrate 102b.Concrete, in the present embodiment, conductive through hole 104c can be overlapping on the y of direction with electrode pattern 102c, and wherein direction y is vertical with the second substrate 104a.But the utility model is not as limit, in other embodiments, conductive through hole 104c also can be not overlapping on the y of direction with electrode pattern 102c, and be electrically connected by other conductive members and electrode pattern 102c.
Please refer to Fig. 1 C and Fig. 2 C, then, utilize adhesion layer 106 barrier structure 108 to be connected to sticking together on district 102a of first substrate 102.When barrier structure 108 be connected to first substrate 102 stick together district 102a after, barrier structure 108 is configured at sticking together on district 102a of first substrate 102 and surrounds second substrate 104.Particularly, barrier structure 108 is separated by with second substrate 104 a segment distance R, wherein 0 < R≤0.3mm on the direction x being parallel to first substrate 102.Furthermore, in the present embodiment, distance R can equal or close to 0.1mm, but the utility model is not as limit.Barrier structure 108 has composition surface 108a towards first substrate 102 and parallel with first substrate 102.Adhesion layer 106 is between composition surface 108a with first substrate 102 and contact with composition surface 108a and first substrate 102.In the present embodiment; barrier structure 108 is such as surrounding the circulus of second substrate 104; the material of barrier structure 108 is such as isolation material, suffers thunderbolt to protect the light-emitting semi-conductor components 110 being equipped on second substrate 104 and avoids electrostatic breakdown light-emitting semi-conductor components 110.It should be noted that, shape and the material of above-mentioned barrier structure 108 illustrate the utility model, and be not used to limit the utility model.In addition, in the embodiment of Fig. 1 C and Fig. 2 C, adhesion layer 106 is such as trim in fact with barrier structure 108.But the utility model is not limited thereto, in other embodiments, the effect be under pressure in the process that adhesion layer 106 also may be connected with first substrate 102 at barrier structure 108 to external expansion, and extends to the second substrate 104a.In other words, the utility model does not limit adhesion layer 106 and must to be separated by a segment distance R with the second substrate 104a, and in other embodiments, the effect that adhesion layer 106 is also likely under pressure extends to the second substrate 104a and contacts with the second substrate 104a.
Please refer to Fig. 1 D and Fig. 2 D, then, at least one light-emitting semi-conductor components 110 to be fixed on second substrate 104 and to make light-emitting semi-conductor components 110 and second substrate 104 be electrically connected.Concrete, in the present embodiment, light-emitting semi-conductor components 110 can have and is arranged at the first electrode 110d on relative two of light-emitting semi-conductor components 110 and the second electrode 110b respectively.First electrode 110d and the second electrode 110b can be arranged at relative two sides of the luminescent layer 110e of light-emitting semi-conductor components 110 respectively, but not as limit, such as in other embodiment of the utility model, the first electrode 110d and the second electrode 110b also can be arranged on the surface of light-emitting semi-conductor components 110 the same side respectively.Light-emitting semi-conductor components 110 more optionally comprises the optical wavelength converting layer 110a (such as fluorescence coating) covering luminescent layer 110e.First electrode 110d and the second electrode 110b one of them (such as first electrode 110d) is directly engaged to conductive pattern 104b, to be electrically connected with second substrate 104.First electrode 110d and the second electrode 110b wherein another (such as second electrode 110b) can utilize wire L to be electrically connected to conductive pattern 104b, to be electrically connected with second substrate 104.It should be noted that, the mode that the form of above-mentioned light-emitting semi-conductor components 110 and light-emitting semi-conductor components 110 and second substrate 104 are electrically connected is that the utility model is described, and is not used to restriction the utility model.In other embodiments, light-emitting semi-conductor components also can be other forms, and the form of the visual light-emitting semi-conductor components of producer utilizes suitable method to be electrically connected light-emitting semi-conductor components 110 and second substrate 104.For example, in other embodiments, when the first electrode of light-emitting semi-conductor components and the second electrode are the same sides being arranged at light-emitting semi-conductor components, producer can utilize further to be covered brilliant mode and is electrically connected light-emitting semi-conductor components and second substrate.In addition, in other embodiment of the utility model, the sequence of steps that Fig. 1 D and Fig. 2 D discloses can have precedence over the step that Fig. 1 C and Fig. 2 C discloses, namely after first configuring light-emitting semi-conductor components 110 on second substrate 104, barrier structure 108 is configured again on first substrate 102, so, configure light-emitting semi-conductor components 110 processing procedure namely not affect by the height of barrier structure 108.
Please refer to Fig. 4, Fig. 4 is the cutaway view of Fig. 2 D along C-C '.Be electrically connected at light-emitting semi-conductor components 110 and second substrate 104, and after connecting with electrical series or parallel way between multiple light-emitting semi-conductor components 110, light-emitting semi-conductor components 110 is by conductive pattern 104b, conductive through hole 104c and electrode pattern 102c and in order to drive the external power source of light-emitting semi-conductor components 110 to be electrically connected.In addition, be fixed on after on second substrate 104 at light-emitting semi-conductor components 110, light-emitting semi-conductor components 110 is surrounded by barrier structure 108, and the light-emitting area 110c of light-emitting semi-conductor components 110 is exposed by barrier structure 108.In the present embodiment, the material of barrier structure 108 can comprise light absorbing material, and barrier structure 108 can higher than light-emitting semi-conductor components 110.For example, light-emitting semi-conductor components 110 has the first height H 1 on the direction y vertical with first substrate 102, barrier structure 108 on the direction y vertical with first substrate 102 comparatively second substrate 104 exceed the second height H 2, wherein H1 < H2≤(3*H1).Thus, most of light beam that light-emitting semi-conductor components 110 sends to its two side can be absorbed by barrier structure 108, and then the light source directivity of strengthening light-emitting device 100, also can not the processing procedure configuring light-emitting semi-conductor components 110 on second substrate 104 be impacted simultaneously.But the utility model is not limited thereto, in other embodiments, the material of barrier structure 108 and barrier structure 108 relative to all visual light-emitting device 100 of the height of light-emitting semi-conductor components 110 do suitable design for the optical characteristics reached.
Fig. 5 is the cutaway view of Fig. 2 E along D-D '.Please refer to Fig. 1 E, Fig. 2 E and Fig. 5, then, packing colloid 112 is filled in the region that barrier structure 108 crosses, comprises between barrier structure 108 and light-emitting semi-conductor components 110 and between light-emitting semi-conductor components 110.In the present embodiment, light-emitting device 100 more comprises packing colloid 112.Packing colloid 112 surrounds light-emitting semi-conductor components 110 and exposes the light-emitting area 110c of light-emitting semi-conductor components 110.Packing colloid 112 optionally comprises reflectorized material.Light-emitting semi-conductor components 110 can be guided to the more consistent direction of the direction y vertical with first substrate 102 to the segment beam that its two side sends by the packing colloid 112 with reflective, and then promotes the directive property of light-emitting device 100.But the utility model is not limited thereto, in other embodiments, whether the material of packing colloid 112 comprises reflectorized material and is determined by the optical demands of light-emitting device 100 reality.
It should be noted that packing colloid 112 except being filled in except between light-emitting semi-conductor components 110 and barrier structure 108, packing colloid 112 is more inserted between barrier structure 108 and second substrate 104.In other words, except the composition surface 108a towards first substrate 102 of barrier structure 108 to be connected with first substrate 102 by adhesion layer 106, barrier structure 108 is also connected with second substrate 104 by packing colloid 112 towards the side 108b of second substrate 104, therefore barrier structure 108 comparatively prior art have more set area and can more firmly be fixed in light-emitting device 100.In addition, because barrier structure 108 is configured in second substrate 104 side, namely light-emitting device 100 utilizes first substrate 102 but not carries barrier structure 108 with second substrate 104, and therefore second substrate 104 is without the need to reserved carrying or the area or the volume that form barrier structure 108.Thus, the consumption of second substrate 104 and material cost just can be reduced, and the cost contributing to light-emitting device 100 reduces.
Compared with prior art, in light-emitting device of the present utility model, due to barrier structure be configured in carrying light-emitting semi-conductor components second substrate by, namely light-emitting device utilizes first substrate to carry barrier structure, and therefore second substrate carries without the need to reserved area or volume or forms barrier structure.Thus, the second substrate occupation mode that cost is high can be more efficient, and reduce consumption and material cost, and the cost contributing to light-emitting device reduces.Simultaneously, in light-emitting device of the present utility model, between barrier structure and second substrate, also leave interval further, and arranged in pairs or groups by the height that barrier structure is optimized, allow the processing procedure difficulty that light-emitting semi-conductor components and packing colloid are set be simplified, and contribute to manufacture and the Yield lmproved of light-emitting device.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in each execution mode also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present utility model; they are also not used to limit protection range of the present utility model, all do not depart from the utility model skill equivalent implementations of doing of spirit or change all should be included within protection range of the present utility model.
Claims (13)
1. a light-emitting device, is characterized in that, comprising:
First substrate;
Second substrate, is configured on described first substrate;
Barrier structure, is configured on described first substrate, and surrounds described second substrate;
At least one light-emitting semi-conductor components, is configured on described second substrate; And
Packing colloid, is configured between described light-emitting semi-conductor components and described barrier structure;
Wherein, described barrier structure on the direction being parallel to described first substrate with described second substrate standoff distance R, and the inserting between described barrier structure and described second substrate in described distance R at least partially of described packing colloid.
2. light-emitting device according to claim 1, is characterized in that, described distance R is: 0 < R≤0.3 mm.
3. light-emitting device according to claim 2, is characterized in that, described distance R equals 0.1mm.
4. light-emitting device according to claim 1, is characterized in that, described packing colloid surrounds described light-emitting semi-conductor components and exposes the light-emitting area of described light-emitting semi-conductor components.
5. light-emitting device according to claim 4, is characterized in that, described packing colloid comprises reflectorized material.
6. light-emitting device according to claim 4, is characterized in that, described light-emitting semi-conductor components has optical wavelength converting layer.
7. light-emitting device according to claim 1, it is characterized in that, described light-emitting semi-conductor components has the first height H 1 on the direction vertical with described first substrate, described barrier structure more described second substrate on the described direction vertical with described first substrate exceeds the second height H 2, wherein H1 < H2≤(3*H1).
8. light-emitting device according to claim 1, is characterized in that, the material of described barrier structure comprises light absorbing material.
9. light-emitting device according to claim 1, is characterized in that, described first substrate comprises the first substrate, and electrode pattern is configured in described first substrate; Described second substrate comprises the second substrate, conductive pattern is configured in described second substrate, and one group of conductive through hole, described conductive pattern couples described one group of conductive through hole, and described one group of conductive through hole is arranged in described second substrate and relative with described first suprabasil electrode pattern at least partially.
10. light-emitting device according to claim 9, it is characterized in that, first electrode of described light-emitting semi-conductor components and the second electrode are arranged on relative two of described light-emitting semi-conductor components respectively, and described first electrode and described second electrode one of them by described conductive pattern and described one group of one of them electric property coupling of conductive through hole.
11. light-emitting devices according to claim 9, it is characterized in that, first electrode of described light-emitting semi-conductor components and the second electrode are arranged on the surface of described light-emitting semi-conductor components the same side respectively, and described first electrode and described second electrode one of them by described conductive pattern and described one group of one of them electric property coupling of conductive through hole.
12. light-emitting devices according to claim 1, it is characterized in that, what described second substrate exposed described first substrate sticks together district, to stick together described in described barrier structure is configured in district and to expose the light-emitting area of described light-emitting semi-conductor components, and described barrier structure has composition surface towards described first substrate and parallel with described first substrate; And described light-emitting device also comprises adhesion layer, to contact with described composition surface and described first substrate between described composition surface with described first substrate.
13. 1 kinds of light-emitting devices, is characterized in that, comprising:
First substrate;
Second substrate, is configured on described first substrate;
Barrier structure, is configured on described first substrate, and surrounds described second substrate;
At least one light-emitting semi-conductor components, is configured on described second substrate; And
Packing colloid, is filled between described light-emitting semi-conductor components and described barrier structure;
Wherein, described light-emitting semi-conductor components has the first height H 1 on the direction vertical with described first substrate, described barrier structure more described second substrate on the described direction vertical with described first substrate exceeds the second height H 2, wherein H1 < H2≤(3*H1).
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| Application Number | Priority Date | Filing Date | Title |
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| TW103106212 | 2014-02-25 | ||
| TW103203215U TWM484190U (en) | 2014-02-25 | 2014-02-25 | Light-emitting apparatus |
| TW103203215 | 2014-02-25 | ||
| TW103106212A TWI546987B (en) | 2014-02-25 | 2014-02-25 | Light-emitting apparatus |
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| CN204257698U true CN204257698U (en) | 2015-04-08 |
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| CN201420772572.7U Active CN204257698U (en) | 2014-02-25 | 2014-12-10 | Light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104868036A (en) * | 2014-02-25 | 2015-08-26 | 璨圆光电股份有限公司 | Light emitting device |
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| JP6211795B2 (en) * | 2012-05-16 | 2017-10-11 | ローム株式会社 | LED light source module |
| CN104868036A (en) * | 2014-02-25 | 2015-08-26 | 璨圆光电股份有限公司 | Light emitting device |
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| CN104868036A (en) * | 2014-02-25 | 2015-08-26 | 璨圆光电股份有限公司 | Light emitting device |
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Effective date of registration: 20161024 Address after: Taiwan, China Hsinchu Science Park Road No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: China Longtan Taiwan Taoyuan County Rural Science and Technology Park Longtan Dragon Garden Road No. 99 Patentee before: Formosa Epitaxy Incorporation |