CN204243038U - Power semiconductor modular and the electric driver with power semiconductor modular - Google Patents
Power semiconductor modular and the electric driver with power semiconductor modular Download PDFInfo
- Publication number
- CN204243038U CN204243038U CN201420372173.1U CN201420372173U CN204243038U CN 204243038 U CN204243038 U CN 204243038U CN 201420372173 U CN201420372173 U CN 201420372173U CN 204243038 U CN204243038 U CN 204243038U
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- CN
- China
- Prior art keywords
- power semiconductor
- semiconductor modular
- wire
- measurement interface
- measuring resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
- G01R1/203—Resistors used for electric measuring, e.g. decade resistors standards, resistors for comparators, series resistors, shunts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/04—Pins or blades for co-operation with sockets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/66—Structural association with built-in electrical component
- H01R13/6608—Structural association with built-in electrical component with built-in single component
- H01R13/6616—Structural association with built-in electrical component with built-in single component with resistor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
Abstract
The utility model relates to a kind of power semiconductor modular (10), there is multiple power semiconductor (12), electrical interconnection between described power semiconductor (12) and input and connect wire (14,16) wire (20 is connected with output, 22,24), wherein, described output connects wire (20,22,24) at least one in has measuring resistance (26) and the measurement interface (30,32) in described measuring resistance (26) both sides.The utility model also relates to a kind of electric driver with power semiconductor modular.
Description
Technical field
The utility model relates to a kind of power semiconductor modular and the electric driver with power semiconductor modular, particularly a kind of drive unit for motor vehicle.
Background technology
Power semiconductor modular and the electric driver itself of rectifier, particularly current transformer be connected with upstream with motor are known.In order to regulate rectifier, such as, must measure the phase current on the output of power semiconductor modular.
In order to measure the phase current on the output of power semiconductor modular, known diverse ways.Therefore, such as can by inductance converter or the numerical value measuring phase current by so-called Hall element.The another kind of known possibility for current measurement is to use measuring resistance, and this measuring resistance is commonly referred to shunting in buzzword.
Measuring resistance also can be considered for the current measurement in power semiconductor modular.But the shortcoming done like this is, this measuring resistance up to the present externally, is namely arranged on independent insulating barrier outside power semiconductor modular or in power semiconductor modular.Two schemes means the increase of the increase of the spatial form of power semiconductor modular and/or the area requirements amount of power semiconductor modular.
Utility model content
This is disadvantageous, because as in the electric of other or electronic unit, microminiaturization is also desired in power semiconductor modular.Therefore the purpose of this utility model is, provide a kind of in power semiconductor modular the feasible program for current detecting, it can not cause the increase of power semiconductor modular.
This object realizes according to power semiconductor modular of the present utility model.To this, multiple power semiconductor, electrical interconnection between power semiconductor is provided with in power semiconductor modular, and input connection wire is connected wire with output, at least one connection in wire of output is made to have measuring resistance and the measurement interface in measuring resistance both sides.
The utility model has the advantage of, measuring resistance is integrated in output connection wire or multiple measuring resistance is integrated in each output connection wire.Geometry and/or the profile of each connection wire change thus or do not change.Connect in wire because measuring resistance is integrated at least one, therefore the spatial form of power semiconductor modular or space requirement do not change.In other cases because the outside design of power semiconductor modular does not change, the feasible program measuring electric current therefore can be advantageously provided in operation.
Such as consider afterwards, this measuring resistance or each measuring resistance are thermally coupled on the cooling body included by power semiconductor modular.Realize thus, connect the heat radiation playing portion's section of measuring resistance effect of wire and prevent because electric current flows through the temperature rising connected caused by wire, and due to the change of the incident specific resistance of material behavior.In this way, when power semiconductor modular runs also can by connect wire measuring resistance effect of playing portion's section specific electrical resistance constant as far as possible, be especially reliably and such as possible independent of the current measurement of the running time of power semiconductor modular.
In order to contact measurement interface, consider to use film wire.Film wire can be directed to the inside of power semiconductor modular especially simply.
When film wire or the electric wire be connected on this film wire are drawn power semiconductor modular, carry out the measurement with the voltage drop of current in proportion by measuring resistance in the outside of power semiconductor modular.
In a special design, the film wire contacted with measurement interface is pooled in the film cable with multiple film wire guided at a plane in parallel, wherein between the film wire of contact measurement interface or at their at least one film wire with shell current potential of arranged alongside.In this way, the distortion of the measured value caused by the electromagnetic interference influence owing to being coupled can be avoided, or at least reduce the possibility of this distortion.In an alternative design, measurement interface and flexible single wiring circuit contact, wherein several single circuits are at the inside twisted of power semiconductor modular, thus make the single circuit combined like this can be directed to the inside of power semiconductor modular simply.Except the single circuit of contact measurement interface, an earth connection or several earth connections also can with single circuit twisted, thus produce the protection preventing electromagnetic interference.
The possibility that another kind avoids the measurement result of the voltage drop of electromagnetic interference pair and current in proportion to have an impact is, power semiconductor modular comprises the signal processing circuit be connected on measurement interface, the measuring-signal that measurement interface receives is converted to digital signal by this signal processing circuit, and this signal can be intercepted on the measuring-signal output of power semiconductor modular.This digital signal is not by electromagnetic interference influence to a great extent.In addition, in this digital signal situation, in a way known and method, verification summation or the supplementary of similar real user data are possible, therefore the contingent distortion of user data can be identified, and it is hereby ensured, only using does not have the user data of distortion for further process.
The power semiconductor modular of power semiconductor modular as the above-mentioned type of so-called IGBT module form can be considered, have possibly here and one or more in the particular design mode that next describes.Power semiconductor modular/IGBT module comprises the so-called IGBT as power semiconductor.
Above-mentioned purpose is also realized with at least one electric driver as the power semiconductor modular described here and next by a kind of, wherein by the measuring resistance included by power semiconductor modular, the measured value of electric current can be intercepted, and wherein this current measurement value can flow to the current regulator of drive unit, and the rectifier of upstream of the motor being connected on it can also be flowed to.Summarize above, be thus equally applicable to the electric driver with this power semiconductor modular about the advantage (can carry out current measurement now and spatially do not change or at least do not increase) of power semiconductor modular.The current measurement not having additional space requirement just may carry out is necessary especially for the operation of electric driver, therefore can realize suitable Current adjustment on the basis of current measurement.This electric driver is such as considered for motor vehicle.
Accompanying drawing explanation
Next embodiment of the present utility model will be explained further by accompanying drawing.Parts same mutually in all the drawings or element arrange identical Reference numeral.
Shown in accompanying drawing:
Fig. 1 is the power semiconductor modular connecting wire with input and output side, and
Fig. 2 is that output connects the enlarged drawing of wire, with it comprise and play measuring resistance effect, with portion's section of special material.
Embodiment
Fig. 1 shows the diagram schematically simplified of power semiconductor modular 10.This module comprises multiple power semiconductor 12.In the design of this exemplary diagram, power semiconductor modular 10 comprises six power semiconductors 12.Consider that so-called IGBT (insulated gate bipolar transistor) is as power semiconductor 12.Power semiconductor modular 10 relates to IGBT module.
Show in the inside of power semiconductor modular 10 for power semiconductor 12 to each other and be connected to input and output side connect wire 14,16; The connection of the conduction of 20,22,24.In the circuit of the exemplary diagram of power semiconductor modular 10, be triple half-bridges of the power supply for three-phase current load, i.e. the power supply of such as three-phase current motor.
Connect wire 14 by input, 16 carry direct current for power semiconductor modular 10.Connect wire 20,22 at output, on 24, can three-phase current be intercepted.This ratio is correspondingly equally applicable to other internal wirings of power semiconductor modular 10 by meaning ground.
Should show that the input and output side with width larger compared with internal connecting wire connects wire 14,16; 20,22, the diagram of 24, this connection wire 14,16; 20,22,24 are usually directed to conductor rail or are at least the Connection Element of track shape.
Arranging in the power semiconductor modular 10 being used for current conversion, setting as illustrated in fig. 1 is used for the power semiconductor modular 10 direct current being converted to three-phase current, usually use wherein in the framework of service condition of power semiconductor modular 10, such as use in drive unit, current measurement is required.As previously mentioned-there is itself known method a lot of for current measurement.Can it is mentioned that inductance converter, so-called Hall element and shunt, i.e. measuring resistance.
Power semiconductor modular 10 shown in Figure 1 also has this measuring resistance 26.Its special feature is, measuring resistance 26 is introduced directly into the connection wire 14,16 of power semiconductor modular 10; 20,22, in one in 24.Exemplarily the feature of the power semiconductor modular 10 of diagram is in FIG, and output connects wire 20,22, and at least one in 24 has measuring resistance 26, is namely set to portion's section of measuring resistance 26.A kind of situation is shown, wherein this measuring resistance 26 is integrated into output connection wire 20,22, and in 24, namely the first output connects in wire 20.The design of power semiconductor modular 10 is conceivable equally, and wherein each measuring resistance 26 is integrated into multiple output and connects wire 20,22, and in 24 or wherein each measuring resistance 26 is integrated into each output and connects wire 20,22, in 24.
Diagram in Fig. 2 shows the diagram such as axle such as grade simplified of portion's section of the output connection wire 20,22,24 of power semiconductor modular 10 as shown in Figure 1, and namely the first output connects portion's section of wire 20.Can identify, the connection wire 20 be generally such as made up of copper or the similar material with good conducting power, in the position of working as measuring resistance 26, is made by another kind of material, as manganite or similar material.This material is integrated in other geometries of connection wire 20 like this, namely produces consistent geometry and consistent profile, and when connecting wire 20 and not comprising the portion's section with different materials being set to measuring resistance 26, these also can draw.
Therefore, the particular portion section connecting wire 20 can be used as measuring resistance 26, connect wire 20 and in the both sides of measuring resistance 26, there is measurement interface 30,32.When power semiconductor modular 10 runs and electric current flow through connect wire 20 time, decline due to the portion's section with measuring resistance 26 with the voltage of current in proportion, this voltage can at measurement interface 30, measured with method in a way known between 32.The resistance connecting this portion section of wire 20 is such as 60 μ Ω, thus makes can not have an impact on the circuit of surrounding with the measurement of the voltage of current in proportion or can not produce obvious impact.
Can find out in the diagram of connection wire 20 in fig. 2, connect wire, in the first side, there is so-called pin (Beine) 34.It arranges the conductive contact of the corresponding contact-making surface being used for power semiconductor modular 10.Conduction connection can be set up by such as ultrasonic bonding.When connect wire 20-as diagram-comprise multiple pin 34, and when they are tapered between welding position and contiguous solid material, obtain good mechanical decoupling.Measuring resistance 26 is preferably located in-as diagram-relatively near pin 34, namely at least in the inside of power semiconductor modular 10, namely in the inside of the housing not having diagram to go out of power semiconductor modular 10 itself.
Contact-making surface 30,32 contact conductively with method by rights, such as, by not having the film wire 36,38 of further diagram in the accompanying drawings.Film wire 36,38 can extract from power semiconductor modular 10, thus make the voltage declined due to measuring resistance 26 be measurable in the outside of power semiconductor modular 10.Film wire 36,38 also can be transported to signal processing circuit 40, this circuit produces digital signal by the magnitude of voltage that can be intercepted by measuring resistance 26, and this signal is drawn from power semiconductor modular 10, and is appreciable in the outside of power semiconductor modular 10.
What do not illustrate is, connect wire 20, the portion's section playing measuring resistance 26 effect of 22,24 can be thermally coupled on the cooling body (not illustrating equally) included by power semiconductor modular in the special design of power semiconductor modular 10.
Although in detail by the further diagram of embodiment with describe the utility model, but the utility model is not limited to disclosed example, other variant can be derived thus by professional, and does not depart from protection range of the present utility model.
Therefore the single most important aspect of the specification here submitted to can be summarized as follows briefly:
A kind of power semiconductor modular 10 is proposed, with multiple power semiconductor 12, wire 20 is connected with output, 22 between power semiconductor 12 and at input connection wire 14,16, electrical interconnection between 24, wherein output connects wire 20,22, and at least one in 24 has measuring resistance 26 and the measurement interface 30 in measuring resistance 26 both sides, 32, and a kind of with electric driver that is this or at least one this power semiconductor modular 10.
Claims (11)
1. a power semiconductor modular (10), there is multiple power semiconductor (12), electrical interconnection between described power semiconductor (12) and input and connect wire (14,16) wire (20 is connected with output, 22,24), it is characterized in that, described output connects wire (20,22,24) at least one in has measuring resistance (26) and the measurement interface (30,32) in described measuring resistance (26) both sides.
2. power semiconductor modular according to claim 1 (10), wherein said measuring resistance (26) is thermally coupled on the cooling body included by described power semiconductor modular (10).
3. power semiconductor modular according to claim 1 and 2 (10), wherein measurement interface (30,32) utilizes film wire (36,38) to contact.
4. power semiconductor modular according to claim 3 (10), wherein said film wire (36,38) is drawn from described power semiconductor modular (10).
5. power semiconductor modular according to claim 3 (10), wherein contact described measurement interface (30,32) described film wire (36,38) the described film wire (36 with multiple planar directed parallel is pooled to, 38) in film cable, wherein at the described measurement interface (30 of contact, 32) between described film wire (36,38) or at least one film wire with shell current potential of arranged alongside.
6. power semiconductor modular according to claim 4 (10), wherein contact described measurement interface (30,32) described film wire (36,38) the described film wire (36 with multiple planar directed parallel is pooled to, 38) in film cable, wherein at the described measurement interface (30 of contact, 32) between described film wire (36,38) or at least one film wire with shell current potential of arranged alongside.
7. power semiconductor modular according to claim 1 and 2 (10), wherein have and be connected to described measurement interface (30,32) signal processing circuit (40) on, described signal processing circuit makes at described measurement interface (30,32) measuring-signal received on is converted to digital signal, and described digital signal can be intercepted on the measuring-signal output of described power semiconductor modular (10).
8. power semiconductor modular according to claim 3 (10), wherein have and be connected to described measurement interface (30,32) signal processing circuit (40) on, described signal processing circuit makes at described measurement interface (30,32) measuring-signal received on is converted to digital signal, and described digital signal can be intercepted on the measuring-signal output of described power semiconductor modular (10).
9. power semiconductor modular according to claim 1 and 2 (10), wherein said power semiconductor modular (10) is IGBT module and described power semiconductor (12) is IGBT.
10. power semiconductor modular according to claim 8 (10), wherein said power semiconductor modular (10) is IGBT module and described power semiconductor (12) is IGBT.
11. 1 kinds with at least one electric driver according to power semiconductor modular in any one of the preceding claims wherein (10), wherein by the described measuring resistance (26) included by described power semiconductor modular (10), current measurement value can be intercepted, and wherein said current measurement value can flow to the current regulator of drive unit.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102013213348.0 | 2013-07-08 | ||
| DE102013213348.0A DE102013213348B4 (en) | 2013-07-08 | 2013-07-08 | Power semiconductor module and electric drive with a power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204243038U true CN204243038U (en) | 2015-04-01 |
Family
ID=52106335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420372173.1U Active CN204243038U (en) | 2013-07-08 | 2014-07-07 | Power semiconductor modular and the electric driver with power semiconductor modular |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN204243038U (en) |
| DE (1) | DE102013213348B4 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017118913A1 (en) * | 2017-08-18 | 2019-04-18 | Danfoss Silicon Power Gmbh | Power semiconductor with a shunt resistor |
| DE102018207308B4 (en) | 2018-05-09 | 2020-07-02 | Infineon Technologies Ag | SEMICONDUCTOR COMPONENT WITH INTEGRATED SHUNT RESISTANCE AND METHOD FOR THE PRODUCTION THEREOF |
| DE102019122369A1 (en) * | 2019-08-20 | 2021-02-25 | Infineon Technologies Ag | POWER SEMICONDUCTOR MODULE AND METHOD FOR MANUFACTURING A POWER SEMICONDUCTOR MODULE |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200970A (en) * | 1977-04-14 | 1980-05-06 | Milton Schonberger | Method of adjusting resistance of a thermistor |
| US4945445A (en) * | 1988-09-29 | 1990-07-31 | Gentron Corporation | Current sense circuit |
| US6351115B1 (en) | 1999-09-29 | 2002-02-26 | Reliance Electric Technologies, Llc | Low profile laminated shunt |
| DE102010062582A1 (en) | 2010-12-08 | 2012-06-14 | Robert Bosch Gmbh | electronic component |
-
2013
- 2013-07-08 DE DE102013213348.0A patent/DE102013213348B4/en active Active
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2014
- 2014-07-07 CN CN201420372173.1U patent/CN204243038U/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| DE102013213348B4 (en) | 2019-07-04 |
| DE102013213348A1 (en) | 2015-01-08 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |