CN204230283U - For improving the 2 D photon crystal thick film of QWIP-LED light extraction efficiency - Google Patents
For improving the 2 D photon crystal thick film of QWIP-LED light extraction efficiency Download PDFInfo
- Publication number
- CN204230283U CN204230283U CN201420145432.7U CN201420145432U CN204230283U CN 204230283 U CN204230283 U CN 204230283U CN 201420145432 U CN201420145432 U CN 201420145432U CN 204230283 U CN204230283 U CN 204230283U
- Authority
- CN
- China
- Prior art keywords
- qwip
- led
- photon crystal
- thick film
- extraction efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Abstract
This patent discloses a kind of 2 D photon crystal bulk structure for improving QWIP-LED light extraction efficiency.This 2 D photon crystal thick film is the limited deep space pore array be etched on QWIP-LED device electrode layer, and the structural parameters of thick film are optimized for QWIP-LED emission wavelength and obtain.The making of bulk structure is the nanofabrication technique that can adopt standard, and technique is simple.The application of this bulk structure on QWIP-LED device, significantly can promote the light extraction efficiency of QWIP-LED device on the one hand, thus the infrared up conversion efficiency of device is improved; Adequately protected the electrical characteristic of device in addition on the one hand, thus ensure that QWIP-LED Video Out is not damaged.
Description
Technical field:
This patent relates to a kind of optical thin-film structure.Specifically refer to a kind of 2 D photon crystal bulk structure for improving QWIP-LED light extraction efficiency, this technology can be used for the device development field of Infrared Detectors.
Background technology:
Infrared up conversion technology is a study hotspot of various countries researcher all the time, its objective is in order to LONG WAVE INFRARED light radiation in target is transformed near infrared light or visible light image information, then imaging is carried out with commercial CCD or CMOS, the traditional infrared planar array detector of fictitious hosts costliness.QWIP-LED is a kind of typical infrared up conversion device, the LONG WAVE INFRARED light (7.8 μm) inciding QWIP region can be transformed into LED region near infrared light (870nm) and export.QWIP-LED device is cascaded at the multi-quantum pit structure QWIPs based on GaAs/AlGaAs and the LED structure based on InGaAs/GaAs.During normal work, under device is in constant voltage, QWIPs produces photo-generated carrier after absorbing imaging optical system incident light, and the distribution of charge carrier in QWIPs plane is that target image specifically reflects.In constant voltage effect download stream subflow to LED region, there is charge carrier and hole-recombination in LED active area, inspire near infrared light, image repetition has been carried out to object scene.
But the optical efficiency of QWIP-LED device annoyings the development of this types of devices always.Because QWIP-LED has higher Refractive Index of Material (QWIP-LED is about 3.5), the near infrared light of major part outgoing there occurs full transmitting on the interface of LED and air, make light exitance extremely low, for this value of QWIP-LED device lower than 2% (1/n
2).
For the LED of traditional lighting purposes, for improving its light extraction efficiency, there has been proposed a series of method, comprising surface roughening, inverted pyramid structure, make Bragg reflection structure etc.These methods can improve the light extraction efficiency of illuminating LED to a certain extent, but and are not suitable for the QWIP-LED device carrying out infrared imaging detection purposes.
2 D photon crystal thick film has precedent for improving light extraction efficiency of LED, but is also mainly applied to illuminating LED.The band theory of 2 D photon crystal thick film is pointed out: on the one hand 2 D photon crystal thick film exists in band structure and there is band gap, and frequency is in guided wave mode in band gap by suppressed, thus emergent light is enhanced; In addition on the one hand, there is upper frequency limit in the guided wave mode in 2 D photon crystal bulk structure, the light higher than this frequency will to go out emission mode outgoing from bulk structure.This theory well supports 2 D photon crystal bulk structure for improving the application prospect of QWIP-LED device optical efficiency.
Summary of the invention:
Based on above technical background, this patent proposes a kind of 2 D photon crystal bulk structure for improving QWIP-LED light extraction efficiency.
As shown in the figure, 2 D photon crystal thick film 2 is positioned on the electrode layer 1 of QWIP-LED device LED side, covers whole light-emitting area; 2 D photon crystal thick film 2 adopts GaAs material to make, and its structure is the cavernous structure of Triangular array arrangement, and the degree of depth in hole is 270-290nm, and the radius in hole is 320-332nm, and lattice constant span is 700-720nm.
In order at utmost reduce the impact on QWIP-LED device electrical characteristic, this patent propose for improve the 2 D photon crystal bulk structure of QWIP-LED light extraction efficiency be employing standard nanofabrication technique the electrode layer of QWIP-LED device carry out make processing, Fig. 1 illustrates the Working position of bulk structure on QWIP-LED device.
For QWIP-LED device center emission wavelength (870nm), design is optimized to the structural parameters of 2 D photon crystal thick film.The main structure parameters of 2 D photon crystal thick film is lattice constant a (adjacent vacant pore centre-to-centre spacing), fill factor, curve factor (pore radius and lattice constant ratio r/a) and hole depth d.Fig. 3-5 is the change curve of relative light extraction efficiency with three parameters of the QWIP-LED containing 2 D photon crystal bulk structure respectively.Obtained by spectrum analysis, the light extraction efficiency of device (870 ± 5nm) can be increased to original more than 2 times by the bulk structure through optimal design in the light emitting region of QWIP-LED device.
The advantage of this patent is:
1. its light outgoing efficiency can be increased to original more than 2 times by this 2 D photon crystal bulk structure in the luminous spectral range concentrated the most of QWIP-LED device.
2. bulk structure is made in device extexine, and the methods such as laser ablation can be adopted to carry out, and have manufacture craft simple, cost is a little low.
3. bulk structure is distributed in the electrode layer of device, ensure that the integrality of LED active area, thus the infrared image that device is exported does not distort because of the damage of device electrical characteristic.
Accompanying drawing illustrates:
Fig. 1 (a) is the QWIP-LED device profile schematic diagram containing 2 D photon crystal thick film, and Fig. 1 (b) is the 2 D photon crystal bulk structure schematic diagram being positioned at electrode layer.
Fig. 2 (a) is 2 D photon crystal thick film minimal structure unit vertical view and parameter a and r, Fig. 2 (b) is structural parameters d.
Fig. 3 is the change curve of the relative light extraction efficiency of QWIP-LED with lattice constant.
Fig. 4 is the change curve of the relative light extraction efficiency of QWIP-LED with fill factor, curve factor.
Fig. 5 is the change curve of the relative light extraction efficiency of QWIP-LED with hole depth.
Embodiment:
Choose QWIP-LED device finished product, the p-type QWIP-LED that such as footprint is 0.5cm × 0.5cm, LONG WAVE INFRARED 7.5 μm can be changed to near-infrared 870nm, as the target devices making 2 D photon crystal bulk structure.
The manufacture method of the 2 D photon crystal thick film according to specification and structural parameters, the nanofabrication technique of employing standard, first the mask plate of layout is made according to structural parameters, on the photoresist utilizing photoetching technique to be transferred on device electrode layer, pattern is finally produced on the electrode layer of QWIP-LED device LED side by recycling ion beam etching.
According to the requirement described in claims, three groups of structural parameters are selected to carry out the making of 2 D photon crystal thick film, respectively:
2 D photon crystal thick film 1: lattice constant 700nm, pore radius 320nm, hole depth 270nm.QWIP-LED light extraction efficiency can be made to be promoted to 2.23 times of common Q WIP-LED.
2 D photon crystal thick film 2: lattice constant 710nm, pore radius 325nm, hole depth 290nm.QWIP-LED light extraction efficiency can be made to be promoted to 2.32 times of common Q WIP-LED.
2 D photon crystal thick film 3: lattice constant 720nm, pore radius 330nm, hole depth 295nm.QWIP-LED light extraction efficiency can be made to be promoted to 2.30 times of common Q WIP-LED.
Claims (1)
1. for improving a 2 D photon crystal thick film for QWIP-LED light extraction efficiency, it is characterized in that: described 2 D photon crystal thick film (2) is positioned on the electrode layer (1) of QWIP-LED device LED side, covers whole light-emitting area; 2 D photon crystal thick film (2) adopts GaAs material to make, and its structure is the cavernous structure of Triangular array arrangement, and the degree of depth in hole is 285-295nm, and the radius in hole is 320nm-330nm, and lattice constant span is 700-720nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420145432.7U CN204230283U (en) | 2014-03-28 | 2014-03-28 | For improving the 2 D photon crystal thick film of QWIP-LED light extraction efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420145432.7U CN204230283U (en) | 2014-03-28 | 2014-03-28 | For improving the 2 D photon crystal thick film of QWIP-LED light extraction efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204230283U true CN204230283U (en) | 2015-03-25 |
Family
ID=52928343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420145432.7U Withdrawn - After Issue CN204230283U (en) | 2014-03-28 | 2014-03-28 | For improving the 2 D photon crystal thick film of QWIP-LED light extraction efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204230283U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915538A (en) * | 2014-03-28 | 2014-07-09 | 中国科学院上海技术物理研究所 | Two-dimensional photonic crystal thick film for increasing QWIP-LED light extraction efficiency |
-
2014
- 2014-03-28 CN CN201420145432.7U patent/CN204230283U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103915538A (en) * | 2014-03-28 | 2014-07-09 | 中国科学院上海技术物理研究所 | Two-dimensional photonic crystal thick film for increasing QWIP-LED light extraction efficiency |
| CN103915538B (en) * | 2014-03-28 | 2016-08-24 | 中国科学院上海技术物理研究所 | A kind of 2 D photon crystal thick film for improving QWIP-LED light extraction efficiency |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102586396B1 (en) | Three dimensional sensors, systems, and associated methods | |
| TWI536552B (en) | Optical sensor | |
| Park et al. | Vertically stacked photodetector devices containing silicon nanowires with engineered absorption spectra | |
| US10566365B2 (en) | Image sensor | |
| US9991302B1 (en) | Optical sensor with color filters having inclined sidewalls | |
| JP2017112169A (en) | Image sensor, imaging system, and method of manufacturing image sensor | |
| JP2011077165A (en) | Light detector, light detecting apparatus, infrared detector and infrared detecting apparatus | |
| TW200941773A (en) | System and method for emitter layer shaping | |
| US20220149098A1 (en) | Microstructure enhanced absorption photosensitive devices | |
| TW201727880A (en) | Image sensor | |
| CN102237432B (en) | Terahertz and infrared frequency band sensitive photon detector | |
| EP4059055A1 (en) | Microstructure enhanced absorption photosensitive devices | |
| JPWO2018021126A1 (en) | Light receiving element and near infrared light detector | |
| JP2016072620A (en) | Image sensor and electronic device including the same | |
| CN204230283U (en) | For improving the 2 D photon crystal thick film of QWIP-LED light extraction efficiency | |
| CN103956403B (en) | Photoelectric detector manufacturing method and manufactured wide-angle photoelectric detector | |
| KR20150066154A (en) | Optical device including multi-quantum well structure lattice matched to GaAs substrate, depth image acquisition apparatus and 3-dimensional image acquisition apparatus employing the optical device | |
| CN103915538B (en) | A kind of 2 D photon crystal thick film for improving QWIP-LED light extraction efficiency | |
| WO2019243742A3 (en) | Method for producing an optoelectronic device comprising self-aligned light-confining walls | |
| Shemeya et al. | Comparison of photonic-crystal-enhanced thermophotovoltaic devices with and without a resonant cavity | |
| JP2010217334A (en) | Filter for light receiving element and light receiving device | |
| CN103325862A (en) | Two-tone quantum well infrared light detector | |
| Ku et al. | Improvement of light extraction for AlGaN-based near UV LEDs with flip-chip bonding fabricated on grooved sapphire substrate using laser ablation | |
| CN210805802U (en) | Visible light wide-bandwidth high-quantum-efficiency detection chip | |
| CN104810378B (en) | A kind of small size pixel quantum trap infra-red focus planar photosensitive element chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20150325 Effective date of abandoning: 20160824 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20150325 Effective date of abandoning: 20160824 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |