CN204190846U - Imageing sensor and imaging system - Google Patents

Abstract

The utility model relates to imageing sensor and imaging system.Described imageing sensor comprises: imaging area, comprises multiple pixel; And one or more flicker detection region, each flicker detection region comprises one or more pixel, wherein when at least one pixel capture image in imaging area, at least one pixel in the described one or more pixel at least one flicker detection region is sampled repeatedly.Technical problem to be solved in the utility model is to provide imageing sensor or the imaging system of the flicker in the scene that can detect and be imaged.A purposes of the present utility model there is provided imageing sensor or the imaging system of the flicker in the scene that can detect and be imaged.

Description

Imageing sensor and imaging system

Technical field

The utility model relates generally to imageing sensor and imaging system, and relates more specifically to the flicker in detected image transducer.

Background technology

Imageing sensor can use rolling shutter mode (rolling shutter mode) or global shutter (global shutter mode) to catch image.In global shutter pattern, the pixel in imageing sensor catches image at single time point place.Each pixel in imageing sensor started and terminates to integrate (integration) or exposure cycle in the same time.In rolling shutter mode, along with read output signal from pixel line by line, the pixel (e.g., OK) of different rows has different exposure time.Often row pixel can start and terminate its exposure with the time offset a little with the pixel of other row in imageing sensor.Therefore, the image of different rows is captured at slightly different time point.

Usually, the light source of such as incandescent lamp or fluorescent lamp is with the frequency scintillation identical with their power supply, normally 100Hz or 120Hz.When the images are captured, this type of flicker can by some in imageing sensor or all pixel capture.Depend on that flicker can produce multiple horizontal frequency band in captured image in the state of the light source of to catch in image the time point place that often row is exposed.Observe the people of captured image and can discover a horizontal frequency band in the picture or many horizontal frequency bands.

In some cases, by using the time for exposure of the multiple being supposition frequency, imageing sensor can be avoided catching flicker in the picture.Such as, for avoiding the flicker caused by 60Hz power supply, imageing sensor can select the integrating time (integrationtime) of the multiple being 1/120 second.In this way, often row image all sees the flicker cycle of integral multiple.If but power supply is 50Hz power supply instead of 60Hz power supply, glimmering by 50Hz the horizontal frequency band caused can foreseeable movement in captured image.Imageing sensor or imaging system can detect 50Hz flicker and responsively the adjustment time for exposure glimmers to avoid described 50Hz.

But when imageing sensor uses the time for exposure of multiple being supposition frequency, imageing sensor always can flicker in detected image.Such as, when the imageing sensor of the frame rate using 60 frames per second operated with the time for exposure of the multiple of 50Hz, because horizontal frequency band can not move in the picture, so the flicker produced by 60Hz frequency may can not be detected.On the contrary, horizontal frequency band appears in the same position in captured image, makes to be difficult to from the content the scene be imaged, tell described horizontal frequency band.

Utility model content

An object of the utility model embodiment is to provide imageing sensor or the imaging system of the flicker in the scene that can detect and be imaged.

According to an aspect of the application, provide a kind of imageing sensor, it is characterized in that, state imageing sensor and comprise: imaging area, comprise multiple pixel; And one or more flicker detection region, each flicker detection region comprises one or more pixel, wherein when at least one pixel capture image in imaging area, at least one pixel in the described one or more pixel at least one flicker detection region is sampled repeatedly.

According to an embodiment of the application, described imageing sensor also comprises the first reading circuit of the one or more pixels be operatively connected in imaging area.

According to an embodiment of the application, described imageing sensor also comprises the second reading circuit of the described one or more pixel be operatively connected in flicker detection region.

According to an embodiment of the application, described imageing sensor also comprises the treatment facility being operatively connected to reading circuit.

According to an embodiment of the application, the second reading circuit comprises: the first terminal of transfering transistor, is operatively connected to photo-detector; Second terminal of described transfering transistor, is operatively connected to the grid reading transistor; The first terminal of switching transistor, is operatively connected to the described grid of described reading transistor; Select the first terminal of transistor, be operatively connected to the first terminal reading transistor; Second terminal of described selection transistor, is operatively connected to alignment; And the second terminal of described reading transistor and the second terminal of described switching transistor, be operatively connected to voltage source; And variable capacitor, between the described grid being operatively connected to described voltage source and described reading transistor.

According to another aspect of the application, provide a kind of imaging system, it is characterized in that, described imaging system comprises: imaging area, comprises multiple pixel; And one or more flicker detection region, each flicker detection region comprises one or more pixel, and wherein when described multiple pixel capture image in imaging area, the described one or more pixel at least one flicker detection region is sampled repeatedly; And processor, be adapted to make when described multiple pixel capture image in imaging area, described multiple pixel at least one flicker detection region is sampled repeatedly, and is adapted with based on the flicker in the sample detecting image read from the multiple pixels at least one flicker detection region described.Processor can receive described sampling and analyze described sampling to detect the flicker in the image that is captured to.If flicker detected, processor can compensate described flicker.Give one example, processor can adjust the time for exposure for catching described image.

According to an embodiment of the application, described imaging system also comprises the first reading circuit of the described multiple pixel be operatively connected in described imaging area.

According to an embodiment of the application, described imaging system also comprises the second reading circuit of the described one or more pixel be operatively connected in flicker detection region.

According to an embodiment of the application, be connected to described first reading circuit described processor operations.

According to an embodiment of the application, be connected to described second reading circuit described processor operations.

According to the another aspect also had of the application, provide a kind of imageing sensor, it is characterized in that, described imageing sensor comprises: imaging area, comprises multiple pixel; And comprise the flicker detection region of multiple pixel, be connected to common node each pixel operation in described multiple pixel in wherein said flicker detection region, and described common node is operatively connected to reading circuit, and wherein when at least one pixel capture image in imaging area, the described multiple pixel in described flicker detection region is sampled repeatedly.

According to an embodiment of the application, described reading circuit comprises: the first terminal of transfering transistor, is operatively connected to common node; Switch and capacitor, be operatively parallel-connected to the second terminal of transfering transistor; Read the grid of transistor, be operatively connected to described second terminal of described transfering transistor.

According to an embodiment of the application, described reading circuit comprises the grid reading transistor, is operatively connected to described common node.

The another aspect also had, a kind of method for catching image in the image sensor can comprise: stored charge with at least one the pixel capture image in imaging area and in basic pixel simultaneously at least one blinking region.Described at least one pixel capture during image, multiple read operation can be performed to obtain sampling from the described one or more pixel at least one flicker detection region described described in imaging area.Described sampling can be analyzed with the flicker in detected image.If flicker detected, then processor can compensate described flicker.

On the other hand, a kind of method for starting flicker detection pattern in the image sensor can comprise: when will be imaged at least one pixel capture in district when image, determine whether to utilize at least one flicker detection region detection to glimmer, and if detect flicker, then during at least one pixel capture, from one or more pixels at least one flicker detection region described, read electric charge repeatedly described in during described image is by described imaging area.If do not detect flicker, then image described in the described one or more pixel at least one flicker detection region described and at least one pixel capture described in described imaging area.

At least one advantage of the present utility model there is provided imageing sensor or the imaging system of the flicker in the scene that can detect and be imaged.

Accompanying drawing explanation

Understand embodiment of the present utility model better with reference to the following drawings.The element of accompanying drawing needs not to be relative to each other proportional.Use identical drawing reference numeral to refer to the common same characteristic features of accompanying drawing as much as possible.

Figure 1A-1B describes front view and the rearview of the exemplary electronic device that can comprise one or more imageing sensor;

Fig. 2 is the example block diagram of the electronic equipment shown in Fig. 1;

Fig. 3 is the cross section view of the camera 102 shown in Figure 1A;

Fig. 4 describes the simplified block diagram of the example image transducer being suitable for use as the imageing sensor 302 shown in Fig. 3;

Fig. 5 describes the simplification summary view of the pixel being suitable for use as the pixel 406 shown in Fig. 4;

Fig. 6 describes the simplification synoptic diagram of an example pixel in the imaging area and flicker detection region being operatively connected to reading circuit;

Fig. 7 describes the simplification synoptic diagram of another example pixel in the imaging area and flicker detection region being operatively connected to reading circuit;

Fig. 8 is the flow chart of the method for the flicker in detected image transducer; And

Fig. 9 is the flow chart of the method for starting the pattern in imageing sensor.

Embodiment

Embodiment described here provides the imageing sensor comprising imaging area and one or more flicker detection region.Imaging area comprises the pixel of catching one or more image.Each flicker detection region comprises the pixel be sampled when capturing the image repeatedly.Sampling can be detected the flicker in the scene be imaged by processor analysis.

With reference now to Figure 1A-1B, show front view and the rearview of the electronic equipment comprising one or more imageing sensor.Electronic equipment 100 comprises first camera 102, second camera 104, shell 106, I/O (I/O) component 108, display 110 and optional photoflash lamp 112 or the light source for one or more camera.Electronic equipment 100 can also comprise typical one or more intraware (not shown) of calculating or electronic equipment, such as such as, and one or more processor, memory assembly, network interface etc.

In an illustrative embodiment, electronic equipment 100 is implemented as smart phone.But other embodiments are not limited thereto structure.The calculating of other types or electronic equipment can comprise one or more camera, include but not limited to, net book or laptop computer, tablet computing device, wearable communication equipment, wearable health-care aid, digital camera, printer, scanner, video recorder and photocopier.

As seen in figs. 1 a-1b, shell 106 can be that the intraware of electronic equipment 100 forms outer surface or partial outer face and containment vessel, and can surround display 110 at least partly.Shell 106 can be formed by one or more assembly be operationally connected to each other, such as forward part and rear section.Alternatively, shell 106 can be formed by the single part being operably connected to display 110.

I/O component 108 can be realized by the component that inputs or outputs of any type.Only as an example, I/O component 108 can be switch, button, capacitance sensor or other input mechanisms.I/O component 108 allow user and electronic equipment 100 mutual.Such as, I/O component 108 can be that button or switch are to change volume, to turn back to main screen or similar.Electronic equipment can comprise one or more input link or output link, and each component can have single I/O function or multiple I/O function.

Display 110 operationally or communicatedly can be connected to electronic equipment 100.Display 110 can be realized by the suitable display of any type, such as retinal display or active matrix colour liquid crystal display device.Display 110 is provided for the visual output of electronic equipment 100.In certain embodiments, display 110 can work to receive the input of user to electronic equipment.Such as, display 110 can be the multiple point touching capacitance sensing touch-screen that can detect one or more user input.

Electronic equipment 100 can also comprise some intrawares.Fig. 2 describes an example of the simplified block diagram of electronic equipment 100.Electronic equipment can comprise one or more processor 200, store or memory assembly 201, I/O (I/O) interface 204, power supply 206 and transducer 208, and each is then in following discussion.

One or more processor 200 can control some or all operations of electronic equipment 100.Processor 200 can or directly or indirectly communicate with the basic all component of electronic equipment 100.Such as, one or more system bus 210 or other communication agencies can provide processor 200, memory 202, I/O interface 204, camera 102,104, display 110, communication between I/O component 108 and/or transducer 208.Processor 200 may be implemented as any electronic equipment that can process, receive or transmit data or instruction.Such as, described one or more processor 200 can be the combination of microprocessor, CPU (CPU), application-specific integrated circuit (ASIC) (ASIC), digital signal processor (DSP) or this kind equipment multiple.As described in this, term " processor " means to comprise a computing element of single processor or processing unit, multiple processor, multiple processing unit or other suitable configurations or multiple computing element.

One or more storage or memory devices 202 can store the electronic data that can be used by electronic equipment 100.Such as, memory 202 can storage of electronic or content, such as such as, and audio file, document files, timing signal and view data.Memory 202 can be configured to the memory of any type.Only as an example, memory 202 may be implemented as with the memory element of the random access memory of any combination, read-only memory, flash memory, removable memory or other types.

One or more I/O interface 204 can receive data from user or other electronic equipments one or more.Such as, I/O interface 204 can receive input from the I/O component 108 shown in Figure 1A.In addition, I/O interface 204 can promote that data arrive the transmission of user or other electronic equipments.Such as, be in the embodiment of smart phone at electronic equipment 100, I/O interface 204 can send from network reception data or via wireless or wired connection and transmit electronic signal.Wireless and example that is wired connection includes but not limited to, honeycomb, Wi-Fi, bluetooth and Ethernet.In one or more embodiments, I/O interface 204 supports multiple network or communication agency.Such as, I/O interface 204 can by blueteeth network and another device pairing to give this equipment by signal transmission, simultaneously from Wi-Fi or other wired or wireless connection Received signal strength.

One or more power supply 206 can provide any equipment of the energy to realize by giving electronic equipment 100.Such as, power supply 206 can be the connection cable of battery or other power supplys electronic equipment 100 being connected to such as wall plug.

One or more transducer 208 can be realized by the transducer of any type.Illustrative sensors includes but not limited to, sound transducer (such as, microphone), optical sensor (such as, ambient light sensor), gyroscope and accelerometer.Transducer 208 can be used to provide data to processor 200, and it may be used for the function strengthening or change electronic equipment.

It should be noted that Fig. 2 is only illustrative.Other embodiments can comprise extra or different assembly.

As with reference to described by Figure 1A and 1B, electronic equipment 100 comprises one or more camera 102,104 and optional photoflash lamp 112 or the light source for a camera or multiple camera.Fig. 3 is the simplification profile of the camera 102 obtained along line 3-3 in Figure 1A.Although Fig. 3 describes first camera 102, one skilled in the art will recognize that second camera 104 can roughly be similar to first camera 102.In certain embodiments, camera can comprise the imageing sensor of global shutter configuration and camera can have the imageing sensor of Rolling shutter configuration.In other examples, camera can comprise and has the imageing sensor higher than other magazine image sensor resolutions.

Camera 102 comprises the imaging table 300 with imageing sensor 302 optical communication.Imaging table 300 is operably connected to shell 106 and is positioned over before imageing sensor 302.Imaging table 300 can comprise customary components, such as lens, filter, aperture and shutter.Imaging table 300 guides, focuses on or is delivered to imageing sensor 302 the light 304 in its visual field.One or more images of subject scenes caught by imageing sensor 302 by incident light being converted to the signal of telecommunication.

Imageing sensor 302 is supported by supporting construction 306.Supporting construction 306 can be the material of based semiconductor, include but not limited to, silicon, silicon-on-insulator (SOI) technology, silicon on sapphire (SOS) technology, doping or unadulterated semiconductor, the epitaxial loayer that Semiconductor substrate is formed, the wellblock that Semiconductor substrate is formed or buried layer and other semiconductor structures.

The various elements of imaging table 300 or imageing sensor 302 can by processor or memory, the processor 200 in such as Fig. 2, the timing signal provided or other signal controlling.Some or all of elements in imaging table 300 can be integrated into single component.In addition, the some or all of elements in imaging table 300 can be integrated with one or more additional element of imageing sensor 302 and possible electronic equipment 100, to form camera model.Such as, in certain embodiments, processor or memory can be integrated with imageing sensor 302.

With reference now to Fig. 4, show the simplified block diagram of the example image transducer being suitable for use as the imageing sensor 302 shown in Fig. 3.Imageing sensor 400 can comprise image processor 402 and imaging area 404.Imaging area 404 may be implemented as the pel array comprising pixel 406.In this illustrative embodiment, pel array is configured by the arrangement with row and column.But other embodiments are not limited thereto configuration.Pixel in pel array can with any suitable configuration arrangement, such as such as, and hexagon-shaped configuration.

Imaging area 404 can be communicated with column selection 408 by one or more column selection line 410, and selects line 414 to communicate with row selection 412 by one or more row.Specific pixel 406 or pixel groups are optionally selected in row selection 412, all pixels 406 such as in some row.The data that column selection 408 optionally receives from described selection pixel 406 or pixel groups (such as, all pixels of particular column) export.

Row selection 412 and/or column selection 408 can communicate with image processor 402.Image processor 402 can process the data from pixel 406 and data is supplied to other assemblies of processor 200 and/or electronic equipment 100.It should be noted that in certain embodiments, image processor 402 can be integrated into processor 200 or be separated with it.

One or more flicker detection region 416 can adjoin imaging area 404 and place.In the exemplary embodiment, a flicker detection area adjacency imaging area 404 top place and the bottom of another flicker detection area adjacency imaging area 404 put.Other embodiments can be placed on diverse location one or more flicker detection region.In addition, each flicker detection region 416 is illustrated as the pixel of single horizontal line.Other embodiments can be included in any configuration the pixel of any given number arranged.

Each flicker detection region comprises pixel 418.In certain embodiments, pixel 418 is configured to the pixel 406 in imaging area 404.Other embodiments can differently configure pixel 418.6 and 7 two exemplary pixels configurations are described subsequently in more detail by reference to the accompanying drawings.Flicker detection region can reduce the impact of scene content on flicker detection, because the roughly the same specific region of flicker detection area sampling image.

Pixel 418 in flicker detection region can be divided into subregion alternatively.As an example, pixel 418 can be flatly divided into two or four subregion 420,421,422,423.Pixel is divided into subregion 420,421,422,423 and allows the flicker detection region at top and the flicker detection region disconnecting of bottom, no matter and the orientation of imageing sensor (such as, vertical setting of types or horizontally-arranged).Such as, if the top of the scene be imaged is glimmered different from the bottom of scene, two sub regions can be used to observe the top of described scene, and such as subregion 421 and 422 or 422 and 432 or 420 and 423 or 420 and 421, depends on the orientation of imageing sensor.

In certain embodiments, one or more flicker detection region 416 comprises and being physically separated and distinct pixel 418 with the pixel 406 in imaging area 404.In other embodiments, flicker detection region be included in imaging area 404 realize but with the pixel that the pixel logic in imaging area is separated.Such as, the pixel in imaging area in top line and bottom row can be used to flicker detection instead of image capture.And in another embodiment also had, the pixel in one or more flicker detection region can have multiple pattern, and one of them pattern is flicker detection and another pattern is image capture.The unlatching of composition graphs 9 description scheme in more detail.

With reference now to Fig. 5, describe the simplification summary view of the pixel being suitable for use as the pixel 406 shown in Fig. 4.Pixel 500 comprises photo-detector (PD) 502, transfering transistor (TX) 504, sensing region 506, resets (RST) transistor 508, reads transistor 510 and row selection (RS) transistor 512.Sensing region 506 is represented, because sensing region 506 can store the electric charge received from photo-detector 502 temporarily by the capacitor in exemplary embodiment.As described below, after electric charge is transferred from photo-detector 502, described electric charge can be stored in sensing region 506 until the grid of row selecting transistor 512 is pulsed (pulsed).

A connecting terminals of transfering transistor 504 receives photo-detector 502 and another connecting terminals receives sensing region 506.A terminal of reset transistor 508 and a connecting terminals of reading transistor 510 receive supply voltage (Vdd) 514.Another connecting terminals of reset transistor 508 receives sensing region 506, and another connecting terminals reading transistor 510 receives a terminal of row selecting transistor 512.Another connecting terminals of row selecting transistor 512 receives column selection line 410.

Only as an example, in one embodiment, photo-detector 502 is implemented as photodiode (PD) or buries type photodiode (pinned photodiode), sensing region 506 is implemented as diffusion (FD) of floating, and reading transistor 510 is implemented as source following transistor (SF).Photo-detector 502 can be based on the photodiode of electronics (elctron-based) or the photodiode based on hole (hole-based).It should be noted that term photo-detector means to comprise photon or the photodetection assembly of substantially any type as used herein, such as photodiode, bury type photodiode, optical gate or other photon-sensitive regions.In addition, term sensing region means to comprise charge storage or the charge conversion region of substantially any type as used herein.

Skilled person in the art will appreciate that in other embodiments, pixel 500 can by extra or different assembly realization.Such as, row selecting transistor can be omitted and use the power module of pulsation to select pixel, sensing region can be shared by multiple photo-detector and transfering transistor, or reset transistor can be shared by multiple photo-detector, transmission gate and sensing region with reading transistor.

When image will be captured, the integration period for pixel starts and photo-detector 502 accumulates photogenerated charge in response to incident light.When integration period terminates, the electric charge of accumulation in photo-detector 502 is transferred to sensing region 506 by the grid of transfering transistor 504 of optionally pulsing.Usually, before electric charge is transferred to sensing region 506 from photo-detector 502, reset transistor 508 is used to the voltage on sensing region 506 (node 516) to be reset to predeterminated level.When electric charge will be read out from pixel, the grid of row selecting transistor of being pulsed by row selection 412 and row selection line 414, to select the pixel for reading (or the pixel of embarking on journey).Read transistor 510 and sense the voltage be positioned on sensing region 506, and row selecting transistor 512 passes to column selection line 410 described voltage.Column selection line 410 is connected to reading circuit (and optional image processor) by column selection 408.

In certain embodiments, the image capture device of such as camera can not comprise the shutter above camera lens, and therefore imageing sensor can be exposed light constantly.In these embodiments, before capturing the image of expectation, photo-detector may have to be reset or exhaust.Once exhaust from the electric charge of photo-detector, transmission gate and replacement door are just turned off, isolated described photo-detector.Photo-detector can then start integrate (integration) and collect photoproduction (photo-generated) electric charge.

Pixel in flicker detection region can similar pixel 500 realize.Other embodiments differently can configure the pixel in flicker detection region or multiple region.Composition graphs 6 and 7 describe in further detail two different realizations.

Pixel in flicker detection region operatively can be connected to respective column selection line, all column selection lines 410 as shown in Figure 4.Like this, can sample by the mode same to the pixel in imaging area or read the electric charge in pixel.

Alternatively, the pixel in flicker detection region operatively can be connected to reading circuit and the alignment of separation.Fig. 6 describes the simplification synoptic diagram of an example pixel in the imaging area and flicker detection region being operatively connected to reading circuit.As previously described, the pixel 406 in imaging area 404 is operatively connected to respective column selection line 410.The each of pixel 600 in flicker detection region 602 comprises photo-detector 604.Photo-detector 604 is operatively connected to public flicker sense node 606.Electric charge from each photo-detector 604 can be combined or on average in public flicker sense node 606.

Public flicker sense node 606 connects the grid reading transistor 608.In certain embodiments, reading transistor 608 is source following transistor.The connecting terminals reading transistor 608 receives a terminal of column selection transistor 610.Another connecting terminals of column selection transistor 610 receives alignment 612.The grid of column selection transistor 610 can be connected to row and select line (not shown).When from flicker detection region 602 sampled charge or signal, row selects line to may be used for selecting or opening column selection transistor 610.Another terminal reading transistor 608 can be connected to supply voltage.Column selection line 410 and alignment 612 eachly can be connected to reading circuit 614.In certain embodiments, reading circuit can be shared between two or more column selection lines 410 and/or alignment 612.Each reading circuit 614 can comprise digital to analog converter so that the analog signal obtained from pixel 406 and flicker detection region 602 is converted to digital signal.

With reference now to Fig. 7, show the simplification synoptic diagram of another example pixel in the imaging area and flicker detection region being operatively connected to reading circuit.Be similar to the embodiment shown in Fig. 6, the pixel 406 in imaging area 404 is operatively connected to respective column selection line 410.Pixel 700 in flicker detection region 702 is operatively connected to photoelectric current summing junction 706.Photo-detector 708 connects together by photoelectric current summing junction 706, allows the photoelectric current from each photo-detector 708 to add up one piece.In the exemplary embodiment, electric current summation can by formula definition.

Photoelectric current summing junction 706 is connected to flicker reading circuit 710.In certain embodiments, except the circuit for imaging area 404, flicker reading circuit can comprise at least one row and be exclusively used in the ADC (such as, alignment 718 and ADC 722) in flicker detection region.Flicker reading circuit 710 can comprise the circuit structurally similar to some or all circuit in pixel 406.Such as, the reading circuit 710 that glimmers can comprise transfering transistor 712.A connecting terminals of transfering transistor 712 receives photoelectric current summing junction 706, and another connecting terminals receives the grid reading transistor 714.In certain embodiments, reading transistor 714 is source following transistor.The connecting terminals reading transistor 714 receives a terminal of column selection transistor 716.Another connecting terminals of column selection transistor 716 receives alignment 718.Alignment 718 is exclusively used in flicker reading circuit.Except any pixel in the flicker detection row of the reading circuit 710 that glimmers all disconnects with alignment 718 and can be connected to the alignment (not shown) be separated.

The grid of column selection transistor 716 can be connected to row and select line (not shown).When from flicker detection region 702 sampled charge or signal, row selects line to may be used for selecting or opening column selection transistor 716.Another terminal reading transistor 714 can be connected to supply voltage.Column selection line 410 and alignment 718 is each can be connected to reading circuit 720, it comprises digital to analog converter 722.

Capacitor 724 can be connected to photoelectric current summing junction 706 by switch 726.The size of capacitor 724 can be programmable with adjustment for various illumination condition and/or the integrating time of summed photoelectric current that detected by the pixel 700 in flicker detection region.Such as, less capacitance can be selected for low lighting condition and/or short integrating time, so as to glimmer reading circuit 710 can with the normal running parallel work-flow of pixel 406.In addition, in certain embodiments, capacitor 724 can reduce to open and reads threshold voltage required for transistor 714 or electric current.

Fig. 8 is the flow chart of the method for the flicker in detected image transducer.Initial as shown in frame 800, accumulate in one or more pixels of electric charge in one or more flicker detection region, and when pixel capture image in imaging area, from pixel, reading is sampled repeatedly.Such as, sampling can be read 1000 times from pixel 100 during image capture.Sampling can at frame 802 together by average.In certain embodiments, by the average described sampling of the processor digitlization of such as image processor 402.In this type of embodiment, the pixel in flicker detection region can be reset during pixel to expect that sample frequency reads from imaging area and to read.

Other embodiments can differently average described sampling.Such as, can as described in composition graphs 6 and Fig. 7 average as described in sampling.And in other embodiments, the pixel in flicker detection region can operatively be connected to the analog to digital converter be separated with imageing sensor, and reading circuit independently in application drawing image-position sensor and/or analog to digital converter.

Then, as represented by block 804, analyze by average sampling to determine whether there is flicker in the scene that is imaged.Can by the processor analysis of such as image processor 402 (Fig. 4) or processor 200 (Fig. 2) by average sampling.Such as, in one embodiment, processor can use and be performed Fourier transform by average sampling.As another example, processor can perform relevant to detect flicker by known blinker pattern.And in another embodiment also had, processor can the distance between also measure local summit (maxima) and minimum point (minima) glimmer to detect.

At frame 806, the determination about flicker whether being detected then can be made.If not, described method terminates.When flicker being detected, process turns frame 808, determines the frequency of glimmering.Then the compensation to flicker is determined at frame 810.In one embodiment, the time for exposure of image capture is by the flicker adjusting to reduce or eliminate in captured image.

As previously mentioned, the pixel in one or more flicker detection region can have multiple pattern, and one of them pattern is flicker detection and another pattern is image capture.Fig. 9 is the flow chart of the method for starting pattern in the image sensor.Signal can be selected by receiving mode in frame 900.Can by user, imageing sensor and/or electronic equipment preference pattern.Such as, imageing sensor can determine that flicker detection is optional, such as when image is caught in outdoor in the sun.Alternatively, when capturing the image, user can select he or her to wish to utilize flicker detection.

Then, as shown in frame 902, the determination about whether selecting flicker detection mould can be made.If so, process forwards frame 904 to, and the one or more pixels wherein at least one flicker detection region are used to detect flicker and described method terminates.When non-selected flicker detection pattern, the pixel in flicker detection region is used to catch image together with the pixel in imaging area and described method terminates (frame 906).The timing of the signal and/or described signal that are supplied to pixel can change based on the pattern selected.Only as an example, processor 402 can provide or the enable signal that will be delivered to pixel for each pattern.In certain embodiments, processor can produce signal or from read output signal in memory (such as, memory 202).

Other embodiments can differently perform the method shown in Fig. 8 or Fig. 9.Can add or delete frame, or frame can be performed with different orders.As an example, the frame 808 in Fig. 8 can be omitted in certain embodiments.

The existence of flicker and the disappearance of flicker can be detected in flicker detection region.Can be faster than what occur in conventional image sensor to the compensation of the flicker detected, because every frame (such as, each image capture) reads sampling repeatedly from flicker detection region.Extraly or alternatively, the flicker occurred at different frequency can more easily be detected.

With reference to some feature wherein, various embodiment is described in detail by concrete, but will be appreciated that can realize variant and amendment in spirit and scope of the present disclosure.Even and if specific embodiment is described in detail at this, should be understood that application is not limited to these embodiments.Especially, any feature described about an embodiment also can be used to other compatible embodiments.Equally, as long as compatible, the feature of different embodiment can be exchanged.

Claims (13)

1. an imageing sensor, is characterized in that, described imageing sensor comprises:

Imaging area, comprises multiple pixel; And

One or more flicker detection region, each flicker detection region comprises one or more pixel, wherein when at least one pixel capture image in imaging area, at least one pixel in the described one or more pixel at least one flicker detection region is sampled repeatedly.

2. imageing sensor as claimed in claim 1, it is characterized in that, described imageing sensor also comprises the first reading circuit of the one or more pixels be operatively connected in imaging area.

3. imageing sensor as claimed in claim 2, it is characterized in that, described imageing sensor also comprises the second reading circuit of the described one or more pixel be operatively connected in flicker detection region.

4. imageing sensor as claimed in claim 3, it is characterized in that, described imageing sensor also comprises the treatment facility being operatively connected to reading circuit.

5. imageing sensor as claimed in claim 3, it is characterized in that, the second reading circuit comprises:

The first terminal of transfering transistor, is operatively connected to photo-detector;

Second terminal of described transfering transistor, is operatively connected to the grid reading transistor;

The first terminal of switching transistor, is operatively connected to the described grid of described reading transistor;

Select the first terminal of transistor, be operatively connected to the first terminal reading transistor;

Second terminal of described selection transistor, is operatively connected to alignment; And

Second terminal of described reading transistor and the second terminal of described switching transistor, be operatively connected to voltage source; And

Variable capacitor, between the described grid being operatively connected to described voltage source and described reading transistor.

6. an imaging system, is characterized in that, described imaging system comprises:

Imaging area, comprises multiple pixel; And

One or more flicker detection region, each flicker detection region comprises one or more pixel, and wherein when described multiple pixel capture image in imaging area, the described one or more pixel at least one flicker detection region is sampled repeatedly; And

Processor, be adapted to make when described multiple pixel capture image in imaging area, described multiple pixel at least one flicker detection region is sampled repeatedly, and is adapted with based on the flicker in the sample detecting image read from the multiple pixels at least one flicker detection region described.

7. imaging system as claimed in claim 6, it is characterized in that, described imaging system also comprises the first reading circuit of the described multiple pixel be operatively connected in described imaging area.

8. imaging system as claimed in claim 7, it is characterized in that, described imaging system also comprises the second reading circuit of the described one or more pixel be operatively connected in flicker detection region.

9. imaging system as claimed in claim 7, is characterized in that, be connected to described first reading circuit described processor operations.

10. imaging system as claimed in claim 8, is characterized in that, be connected to described second reading circuit described processor operations.

11. 1 kinds of imageing sensors, is characterized in that, described imageing sensor comprises:

Imaging area, comprises multiple pixel; And

Comprise the flicker detection region of multiple pixel, be connected to common node each pixel operation in described multiple pixel in wherein said flicker detection region, and described common node is operatively connected to reading circuit, and wherein when at least one pixel capture image in imaging area, the described multiple pixel in described flicker detection region is sampled repeatedly.

12. imageing sensors as claimed in claim 11, it is characterized in that, described reading circuit comprises:

The first terminal of transfering transistor, is operatively connected to common node;

Switch and capacitor, be operatively parallel-connected to the second terminal of transfering transistor;

Read the grid of transistor, be operatively connected to described second terminal of described transfering transistor.

13. imageing sensors as claimed in claim 11, is characterized in that, described reading circuit comprises the grid reading transistor, is operatively connected to described common node.