CN204190484U - A kind of power switching circuit - Google Patents
A kind of power switching circuit Download PDFInfo
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- CN204190484U CN204190484U CN201420653056.2U CN201420653056U CN204190484U CN 204190484 U CN204190484 U CN 204190484U CN 201420653056 U CN201420653056 U CN 201420653056U CN 204190484 U CN204190484 U CN 204190484U
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Abstract
The utility model proposes a kind of power switching circuit, comprising: module is cut off in the first electrical transfer module, the second electrical transfer module and power supply; First electrical transfer module comprises a MOS element, the 2nd MOS element and the 3rd MOS element; Second electrical transfer module comprises the 4th MOS element, the 5th MOS element and the 6th MOS element; Power supply is cut off module and is comprised the 7th MOS element and the 8th MOS element.The utility model uses the characteristics design of MOS components and parts switching circuit as the circuit switched of dual power supply flexibly, and when only having an independent Power supply, corresponding Power supply can be passed to and be powered unit by circuit switched; When two power supplys are powered simultaneously, automatically by a wherein road dump, can both ensure that the power supply being powered unit, again by two-way power supply to keeping apart, avoid two-way power supply and be connected directly between danger together.
Description
Technical field
The utility model relates to electronic technology field, particularly relates to a kind of power switching circuit.
Background technology
Many electronic products in the market generally all only have a power supply interface, if power supply interface has gone wrong, electronic product just can not use, and do not ensure.In addition, also there are some to have the product of two power supply interfaces, but there is no circuit switched in the middle of two power supply interfaces, if two power supply interfaces are powered simultaneously, be equivalent to two power supplys directly to connect together.Although two power supplys power all to same product, output voltage, current specification should be the same, and two different electrical power are always differentiated, and very possible like this one of them power supply that can cause burns out, or power supply is unstable, by the situation being powered product and burning out.
Utility model content
Based on the technical problem that background technology exists, the utility model proposes a kind of power switching circuit, the safety of dual power supply can be ensured.
A kind of power switching circuit that the utility model proposes, comprising: module is cut off in the first electrical transfer module, the second electrical transfer module and power supply;
First electrical transfer module comprises a MOS element, the 2nd MOS element and the 3rd MOS element, and a MOS element and the 2nd MOS element are P-MOS and are MOS, and the 3rd MOS element is N-MOS; One MOS element S end is connected to the first energization input, and the first energization input is connected ground connection after the first resistance and the 5th resistance; One MOS element D end is connected to the 2nd MOS element D and hold, ground connection after the 2nd MOS element D end series connection the 3rd resistance and the 7th resistance; 2nd MOS element S end is connected to power supply output; 3rd MOS element D is connected to the 2nd MOS element S after holding series connection the 8th resistance and the 4th resistance and holds, 2nd MOS element G end is connected between the 8th resistance and the 4th resistance, 3rd MOS element G end is connected between the 3rd resistance and the 7th resistance, and the 3rd MOS element S holds ground connection; One MOS element S holds and be connected with the first electric capacity between G end, and the 2nd MOS element S holds and be connected with the second electric capacity between G end;
Second electrical transfer module comprises the 4th MOS element, the 5th MOS element and the 6th MOS element, and the 4th MOS element and the 5th MOS element are P-MOS and are MOS, and the 6th MOS element is N-MOS; 4th MOS element S end be connected to the second energization input, second energization input series connection the 9th resistance and the 13 resistance after ground connection, the 4th MOS element G end be connected between the 9th resistance and the 13 resistance; 4th MOS element D end is connected to the 5th MOS element D and hold, ground connection after the 5th MOS element D end series connection the tenth resistance and the 12 resistance; 5th MOS element S end is connected to power supply output; 6th MOS element D is connected to the 5th MOS element S after holding series connection the 14 resistance and the 11 resistance and holds, 5th MOS element G end is connected between the 14 resistance and the 11 resistance, 6th MOS element G end is connected between the tenth resistance and the 12 resistance, and the 6th MOS element S holds ground connection; 4th MOS element S holds and be connected with the 3rd electric capacity between G end, and the 5th MOS element S holds and be connected with the 4th electric capacity between G end;
Power supply is cut off module and is comprised the 7th MOS element and the 8th MOS element, and the 7th MOS element and the 8th MOS element adopt N-MOS; 7th MOS element D is connected to a MOS element S after holding series connection the 6th resistance and the second resistance and holds, one MOS element G end is connected between the 6th resistance and the second resistance, 7th MOS element G end is connected between the first resistance and the 5th resistance, and the 7th MOS element S holds ground connection; 8th MOS element D holds connection the 7th MOS element G end, and the 8th MOS element G end is connected between the 9th resistance and the 13 resistance, and the 8th MOS element S holds ground connection.
Preferably, one MOS element, the 2nd MOS element, the 4th MOS element and the 5th MOS element adopt Si4835DDY-T1-GE3, its the 1st pin, the 2nd pin and the 3rd pin short circuit are held as S, and its 4th pin is held as G, and its 5th pin, the 6th pin, the 7th pin and the 8th pin short circuit are held as D.
Preferably, the 3rd MOS element and the 6th MOS element adopt L2SK801LT1G.
Preferably, the 7th MOS element and the 8th MOS element adopt L2SK801LT1G.
Preferably, 7th MOS element and the 8th MOS element are realized by a 2N7002DW-7-F, the S of the 7th MOS element holds, G holds and D holds the 1st pin, the 2nd pin and the 6th pin that are respectively 2N7002DW-7-F, and the S end of the 8th MOS element, G hold and D holds the 4th pin, the 5th pin and the 3rd pin that are respectively 2N7002DW-7-F.
Preferably, the first electric capacity, the second electric capacity, the 3rd electric capacity and the 4th electric capacity adopt 0.1uF/25V.X5R.
The utility model uses MOS (Metal oxid semiconductor flexibly, field-effect transistor) the characteristics design circuit switched of a switching circuit as dual power supply of components and parts, when only having an independent Power supply, corresponding Power supply can be passed to and be powered unit by circuit switched; When two power supplys are powered simultaneously, automatically by a wherein road dump, only can use a road Power supply, so both ensure that the power supply being powered unit, again by two-way power supply to keeping apart, avoid two-way power supply and be connected directly between danger together.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of a kind of power switching circuit that the utility model proposes.
Embodiment
With reference to Fig. 1, a kind of power switching circuit that the utility model proposes, comprising: module is cut off in the first electrical transfer module, the second electrical transfer module and power supply.
First electrical transfer module comprises a MOS element PQ1, the 2nd MOS element PQ2 and the 3rd MOS element PQ3.One MOS element PQ1 and the 2nd MOS element PQ2 is P-MOS and is MOS, and the 3rd MOS element PQ3 is N-MOS.In the present embodiment, a MOS element PQ1 and the 2nd MOS element PQ2 adopts Si4835DDY-T1-GE3, and its 1st pin, the 2nd pin and the 3rd pin are S end, and its 4th pin is G end, and its 5th pin, the 6th pin, the 7th pin and the 8th pin are D end; 3rd MOS element PQ3 adopts L2SK801LT1G.
One MOS element PQ1 the 1st pin, the 2nd pin and the 3rd pin short circuit, MOS element PQ1 the 3rd pin is connected to the first energization input, and the first energization input is connected ground connection after the first resistance PR1 and the 5th resistance PR5.One MOS element PQ1 the 5th pin, the 6th pin, the 7th pin and the 8th pin are connected with the 2nd MOS element PQ2 the 5th pin, the 6th pin, the 7th pin and the equal equipotential of the 8th pin and ground connection after the 3rd resistance PR3 and the 7th resistance PR7 that connects, namely a MOS element PQ1D end is connected to the 2nd MOS element PQ2D and hold, and ground connection after the 2nd MOS element PQ2D end series connection the 3rd resistance PR3 and the 7th resistance PR7.2nd MOS element PQ2 the 1st pin, the 2nd pin and the 3rd pin short circuit are also connected to power supply output.3rd MOS element PQ3D is connected to the 2nd MOS element PQ2 the 3rd pin after holding series connection the 8th resistance PR8 and the 4th resistance PR4,2nd MOS element PQ2 the 4th pin is connected between the 8th resistance PR8 and the 4th resistance PR4,3rd MOS element PQ3G end is connected between the 3rd resistance PR3 and the 7th resistance PR7, and the 3rd MOS element PQ3S holds ground connection.Be connected with the first electric capacity PC1 between one MOS element PQ1 the 3rd pin and the 4th pin, between the 2nd MOS element PQ2 the 3rd pin and the 4th pin, be connected with the second electric capacity PC2.
Second electrical transfer module comprises the 4th MOS element PQ4, the 5th MOS element PQ5 and the 6th MOS element PQ6.4th MOS element PQ4 and the 5th MOS element PQ5 is P-MOS and is MOS, and the 6th MOS element PQ6 is N-MOS.In the present embodiment, the 4th MOS element PQ4 and the 5th MOS element PQ5 adopts Si4835DDY-T1-GE3, and its 1st pin, the 2nd pin and the 3rd pin are S end, and its 4th pin is G end, and its 5th pin, the 6th pin, the 7th pin and the 8th pin are D end; 6th MOS element PQ6 adopts L2SK801LT1G.
4th MOS element PQ4 the 1st pin, the 2nd pin and the 3rd pin short circuit, 4th MOS element PQ4 the 3rd pin is connected to the second energization input, ground connection after second energization input series connection the 9th resistance PR9 and the 13 resistance PR13, the 4th MOS element PQ4 the 4th pin is connected between the 9th resistance PR9 and the 13 resistance PR13.4th MOS element PQ4 the 5th pin, the 6th pin, the 7th pin and the 8th pin are connected with the 5th MOS element PQ5 the 5th pin, the 6th pin, the 7th pin and the equal equipotential of the 8th pin and ground connection after the tenth resistance PR10 and the 12 resistance PR12 that connects, namely the 4th MOS element PQ4D end is connected to the 5th MOS element PQ5D and hold, and ground connection after the 5th MOS element PQ5D end series connection the tenth resistance PR10 and the 12 resistance PR12.5th MOS element PQ5 the 1st pin, the 2nd pin and the 3rd pin short circuit are also connected to power supply output.6th MOS element PQ6D is connected to the 5th MOS element PQ5 the 3rd pin after holding series connection the 14 resistance PR14 and the 11 resistance PR11,5th MOS element PQ5 the 4th pin is connected between the 14 resistance PR14 and the 11 resistance PR11,6th MOS element PQ6G end is connected between the tenth resistance PR10 and the 12 resistance PR12, and the 6th MOS element PQ6S holds ground connection.Be connected with the 4th electric capacity PC4PC3 between 4th MOS element PQ4 the 3rd pin and the 4th pin, between the 5th MOS element PQ5 the 3rd pin and the 4th pin, be connected with the 4th electric capacity.
Power supply cut-out module comprises the 7th MOS element PQ7 and the 8th MOS element PQ8, the 7th MOS element PQ7 and the 8th MOS element PQ8 and adopts N-MOS.In the present embodiment, 7th MOS element PQ7 and the 8th MOS element PQ8 is realized by a 2N7002DW-7-F, the S of the 7th MOS element PQ7 holds, G holds and D holds the 1st pin, the 2nd pin and the 6th pin that are respectively 2N7002DW-7-F, and the S end of the 8th MOS element PQ8, G hold and D holds the 4th pin, the 5th pin and the 3rd pin that are respectively 2N7002DW-7-F.
7th MOS element PQ7D is connected to MOS element PQ1 the 3rd pin after holding series connection the 6th resistance PR6 and the second resistance PR2, one MOS element PQ1 the 4th pin is connected between the 6th resistance PR6 and the second resistance PR2,7th MOS element PQ7G end is connected between the first resistance PR1 and the 5th resistance PR5, and the 7th MOS element PQ7S holds ground connection; 8th MOS element PQ8D holds connection the 7th MOS element PQ7G end, and the 8th MOS element PQ8G end is connected between the 9th resistance PR9 and the 13 resistance PR13, and the 8th MOS element PQ8S holds ground connection.
In present embodiment, the resistance of the first resistance PR1, the second resistance PR2, the 3rd resistance PR3, the 4th resistance PR4, the 9th resistance PR9, the tenth resistance PR10 and the 11 resistance PR11 is 100K Ω; The resistance of the 5th resistance PR5, the 6th resistance PR6, the 7th resistance PR7, the 8th resistance PR8, the 12 resistance PR12, the 13 resistance PR13 and the 14 resistance PR14 is 47K Ω; First electric capacity PC1, the second electric capacity PC2, the 4th electric capacity PC4PC3 and the 4th electric capacity adopt 0.1uF/25V.X5R model.
When above scheme is specifically implemented, the 7th MOS element PQ7 and the 8th MOS element PQ8 can adopt a L2SK801LT1G to realize respectively.
Below, be input as example with two 19V voltages, the first energization input input+19Vin1, the second energization input input+19Vin2, sets forth the working method of this power switching circuit.
When only having the first energization input input+19Vin1 voltage to power, on the circuit be connected with the second energization input, voltage is 0V, the 4th MOS element PQ4 and the 5th MOS element PQ5 not conducting, first resistance PR1 and the right+19Vin1 of the 5th resistance PR5 carries out dividing potential drop, 7th MOS element PQ7G holds and form electrical potential difference thus conducting drag down MOS element PQ1 a 4th pin electromotive force between S end, make MOS element PQ1 a 4th pin electromotive force lower than the 1st pin, 2nd pin and the 3rd pin, thus a MOS element PQ1 conducting, now, 2nd MOS element PQ2 the 5th, 6, 7, 8 pin electromotive forces are+19Vin1, due to the 2nd MOS element PQ2 body diode effect, switched on instantaneous of a MOS element PQ1, make the 5th of the 2nd MOS element PQ2 the, 6, 7, 8 pin voltages and the 1st, 2, 3 pin voltages only differ the body diode pressure drop of the 2nd MOS element PQ2, and after the 3rd resistance PR3 and the right+19Vin1 of the 7th resistance PR7 carries out dividing potential drop, 3rd MOS element PQ3G holds and form electrical potential difference thus conducting drag down the 2nd MOS element PQ2 the 4th pin electromotive force between S end, 2nd MOS element PQ2 is switched on, thus+19Vin1 voltage is transferred to power supply output output+19V voltage, powers to being powered unit.And because the 5th MOS element PQ5 is not switched on, the voltage of+19V cannot be transferred to the second energization input.
When only having the second energization input input+19Vin2 voltage to power, on the circuit be connected with the first energization input, voltage is 0V, a MOS element PQ1 and the 2nd MOS element PQ2 not conducting; + 19Vin2 voltage by the 9th resistance PR9 and the 13 resistance PR13 dividing potential drop, the 4th pin electromotive force of the 4th MOS element PQ4 lower than the electromotive force of the 1st, 2,3 these three pin thus the 4th MOS element PQ4 be switched on; Now, 5th, 6,7, the 8 pin electromotive forces of the 5th MOS element PQ5 are+19Vin2, due to the body diode effect of the 5th MOS element PQ5, switched on instantaneous of the 4th MOS element PQ4, the 5th, 6,7, the 8 pin electromotive forces of the 5th MOS element PQ5 and the 1st, 2,3 pin electromotive forces are made only to differ the body diode pressure drop of the 5th MOS element PQ5; Again due to the dividing potential drop of the tenth resistance PR10 and the 12 resistance PR12,6th MOS element PQ6 is switched on, thus the voltage of the 5th MOS element PQ5 the 4th pin is dragged down, make the 5th MOS element PQ5 the 4th pin and the 1st, 2,3 pin form electrical potential difference, the 5th MOS element PQ5 is switched on; Thus+19Vin2 voltage is transferred to power supply output output+19V voltage, powers to being powered unit.And because the 2nd MOS element PQ2 is not switched on ,+19V voltage cannot be transferred to the first energization input.
When the first energization input and the second energization input input+19Vin1 respectively and+19Vin2 voltage is powered simultaneously, 9th resistance PR9 and the right+19Vin2 voltage of the 13 resistance PR13, by the 8th MOS element PQ8 conducting, thus the voltage that the 7th MOS element PQ7G holds is dragged down, 7th MOS element PQ7 not conducting, make a MOS element PQ1 also not conducting ,+19Vin1 the voltage of the first energization input input cannot be transferred to power supply output.+ 19Vin2 the voltage transmission of the second energization input input exports+19V voltage to power supply output, powers to being powered unit.
The power switching circuit that present embodiment provides, when there being two-way Power supply, both ensure that to the power supply being powered unit, again by two-way power supply to keeping apart, avoid two-way power supply and be connected directly between danger together.
The above; be only the utility model preferably embodiment; but protection range of the present utility model is not limited thereto; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; be equal to according to the technical solution of the utility model and utility model design thereof and replace or change, all should be encompassed within protection range of the present utility model.
Claims (6)
1. a power switching circuit, is characterized in that, comprising: module is cut off in the first electrical transfer module, the second electrical transfer module and power supply;
First electrical transfer module comprises a MOS element (PQ1), the 2nd MOS element (PQ2) and the 3rd MOS element (PQ3), one MOS element (PQ1) and the 2nd MOS element (PQ2) are for P-MOS and be MOS, and the 3rd MOS element (PQ3) is N-MOS; One MOS element (PQ1) S end is connected to the first energization input, and the first energization input is connected the first resistance (PR1) and the 5th resistance (PR5) ground connection afterwards; One MOS element (PQ1) D end is connected to the 2nd MOS element (PQ2) D and holds, and the 2nd MOS element (PQ2) D holds series connection the 3rd resistance (PR3) and the 7th resistance (PR7) ground connection afterwards; 2nd MOS element (PQ2) S end is connected to power supply output; 3rd MOS element (PQ3) D is connected to the 2nd MOS element (PQ2) S after holding series connection the 8th resistance (PR8) and the 4th resistance (PR4) and holds, 2nd MOS element (PQ2) G end is connected between the 8th resistance (PR8) and the 4th resistance (PR4), 3rd MOS element (PQ3) G end is connected between the 3rd resistance (PR3) and the 7th resistance (PR7), and the 3rd MOS element (PQ3) S holds ground connection; One MOS element (PQ1) S holds and be connected with the first electric capacity (PC1) between G end, and the 2nd MOS element (PQ2) S holds and be connected with the second electric capacity (PC2) between G end;
Second electrical transfer module comprises the 4th MOS element (PQ4), the 5th MOS element (PQ5) and the 6th MOS element (PQ6), 4th MOS element (PQ4) and the 5th MOS element (PQ5) are for P-MOS and be MOS, and the 6th MOS element (PQ6) is N-MOS; 4th MOS element (PQ4) S end is connected to the second energization input, second energization input series connection the 9th resistance (PR9) and the 13 resistance (PR13) ground connection afterwards, the 4th MOS element (PQ4) G end is connected between the 9th resistance (PR9) and the 13 resistance (PR13); 4th MOS element (PQ4) D end is connected to the 5th MOS element (PQ5) D and holds, and the 5th MOS element (PQ5) D holds series connection the tenth resistance (PR10) and the 12 resistance (PR12) ground connection afterwards; 5th MOS element (PQ5) S end is connected to power supply output; 6th MOS element (PQ6) D is connected to the 5th MOS element (PQ5) S after holding series connection the 14 resistance (PR14) and the 11 resistance (PR11) and holds, 5th MOS element (PQ5) G end is connected between the 14 resistance (PR14) and the 11 resistance (PR11), 6th MOS element (PQ6) G end is connected between the tenth resistance (PR10) and the 12 resistance (PR12), and the 6th MOS element (PQ6) S holds ground connection; 4th MOS element (PQ4) S holds and be connected with the 4th electric capacity (PC4) (PC3) between G end, and the 5th MOS element (PQ5) S holds and be connected with the 4th electric capacity between G end;
Power supply is cut off module and is comprised the 7th MOS element (PQ7) and the 8th MOS element (PQ8), and the 7th MOS element (PQ7) and the 8th MOS element (PQ8) adopt N-MOS; 7th MOS element (PQ7) D is connected to MOS element (PQ1) S after holding series connection the 6th resistance (PR6) and the second resistance (PR2) and holds, one MOS element (PQ1) G end is connected between the 6th resistance (PR6) and the second resistance (PR2), 7th MOS element (PQ7) G end is connected between the first resistance (PR1) and the 5th resistance (PR5), and the 7th MOS element (PQ7) S holds ground connection; 8th MOS element (PQ8) D holds connection the 7th MOS element (PQ7) G to hold, 8th MOS element (PQ8) G end is connected between the 9th resistance (PR9) and the 13 resistance (PR13), and the 8th MOS element (PQ8) S holds ground connection.
2. power switching circuit as claimed in claim 1, it is characterized in that, one MOS element (PQ1), the 2nd MOS element (PQ2), the 4th MOS element (PQ4) and the 5th MOS element (PQ5) adopt Si4835DDY-T1-GE3, its the 1st pin, the 2nd pin and the 3rd pin short circuit are held as S, its the 4th pin is held as G, and its 5th pin, the 6th pin, the 7th pin and the 8th pin short circuit are held as D.
3. power switching circuit as claimed in claim 1, it is characterized in that, the 3rd MOS element (PQ3) and the 6th MOS element (PQ6) adopt L2SK801LT1G.
4. power switching circuit as claimed in claim 1, it is characterized in that, the 7th MOS element (PQ7) and the 8th MOS element (PQ8) adopt L2SK801LT1G.
5. power switching circuit as claimed in claim 1, it is characterized in that, 7th MOS element (PQ7) and the 8th MOS element (PQ8) are realized by a 2N7002DW-7-F, the S of the 7th MOS element (PQ7) holds, G holds and D holds the 1st pin, the 2nd pin and the 6th pin that are respectively 2N7002DW-7-F, and the S end of the 8th MOS element (PQ8), G hold and D holds the 4th pin, the 5th pin and the 3rd pin that are respectively 2N7002DW-7-F.
6. the power switching circuit as described in any one of claim 1 to 5, it is characterized in that, the first electric capacity (PC1), the second electric capacity (PC2), the 4th electric capacity (PC4) (PC3) and the 4th electric capacity adopt 0.1uF/25V.X5R.
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| CN201420653056.2U CN204190484U (en) | 2014-11-03 | 2014-11-03 | A kind of power switching circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420653056.2U CN204190484U (en) | 2014-11-03 | 2014-11-03 | A kind of power switching circuit |
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| CN204190484U true CN204190484U (en) | 2015-03-04 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105262183A (en) * | 2015-11-18 | 2016-01-20 | 合肥宝龙达光电技术有限公司 | Power-saving type USB charging structure |
| CN106208358A (en) * | 2016-08-31 | 2016-12-07 | 合肥联宝信息技术有限公司 | A kind of control circuit of dual power supply switching power supply |
| CN107431354A (en) * | 2015-04-15 | 2017-12-01 | 高通股份有限公司 | Electric current mutual conductance protection is provided in electric power rail control system |
| CN111009955A (en) * | 2019-11-26 | 2020-04-14 | 武汉联特科技有限公司 | Dual-power supply circuit with protection |
| US10684671B2 (en) | 2016-05-27 | 2020-06-16 | Qualcomm Incorporated | Adaptively controlling drive strength of multiplexed power from supply power rails in a power multiplexing system to a powered circuit |
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2014
- 2014-11-03 CN CN201420653056.2U patent/CN204190484U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107431354A (en) * | 2015-04-15 | 2017-12-01 | 高通股份有限公司 | Electric current mutual conductance protection is provided in electric power rail control system |
| CN107431354B (en) * | 2015-04-15 | 2020-07-10 | 高通股份有限公司 | Providing current transconductance protection in power rail control systems |
| CN105262183A (en) * | 2015-11-18 | 2016-01-20 | 合肥宝龙达光电技术有限公司 | Power-saving type USB charging structure |
| US10684671B2 (en) | 2016-05-27 | 2020-06-16 | Qualcomm Incorporated | Adaptively controlling drive strength of multiplexed power from supply power rails in a power multiplexing system to a powered circuit |
| CN106208358A (en) * | 2016-08-31 | 2016-12-07 | 合肥联宝信息技术有限公司 | A kind of control circuit of dual power supply switching power supply |
| CN106208358B (en) * | 2016-08-31 | 2018-11-27 | 合肥联宝信息技术有限公司 | A kind of control circuit of dual power supply switching power supply |
| CN111009955A (en) * | 2019-11-26 | 2020-04-14 | 武汉联特科技有限公司 | Dual-power supply circuit with protection |
| CN111009955B (en) * | 2019-11-26 | 2021-07-09 | 武汉联特科技股份有限公司 | Dual-power supply circuit with protection |
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Effective date of registration: 20220104 Address after: 518000 5c104, floor 5, plant 4, Bangkai science and Technology Industrial Park, south of sightseeing road and west of Bangkai Road, Tangjia community, Fenghuang street, Guangming District, Shenzhen, Guangdong Patentee after: SHENZHEN BITLAND INFORMATION TECHNOLOGY Co.,Ltd. Address before: No.4088 Jinxiu Avenue, Hefei Economic and Technological Development Zone, Anhui Province Patentee before: HEFEI BITLAND INFORMATION TECHNOLOGY Co.,Ltd. |