CN204185556U - The equipment of the plasma-deposited film of a kind of coaxial microwave - Google Patents
The equipment of the plasma-deposited film of a kind of coaxial microwave Download PDFInfo
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- CN204185556U CN204185556U CN201420654039.0U CN201420654039U CN204185556U CN 204185556 U CN204185556 U CN 204185556U CN 201420654039 U CN201420654039 U CN 201420654039U CN 204185556 U CN204185556 U CN 204185556U
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Abstract
The equipment of the plasma-deposited film of a kind of coaxial microwave, belong to plasma technology field, this equipment comprises vacuum chamber, vacuum chamber is installed with coaxial microwave plasma source, comprise microwave generator, waveguide, coaxial line transformer, silica tube and interior electrode, wherein, silica tube is positioned at vacuum chamber inside and is fixedly installed on vacuum chamber two side, coaxial line transformer is fixedly installed in silica tube two ends by vacuum chamber outer side wall coaxial-symmetrical, coaxial line transformer is connected with microwave generator by waveguide simultaneously, interior electrode passes silica tube and is fixed in coaxial line transformer, interior electrode, coaxial line transformer, silica tube three is coaxial, the electron density of plasma body and the instrument of electronic temp test is also provided with in equipment, and power and air pressure automatic control equipment and system, can obtain stable, the plasma body that controllability is strong, can realize efficient, stable, uniform deposit film, this production efficiency of equipment is high, production cost is low.
Description
Technical field
The utility model belongs to plasma technology field, particularly a kind of equipment of microwave plasma deposition film.
Background technology
Along with microwave plasma semiconductor film material preparation in application, and semiconductor film material especially liquid crystal display material and solar cell are tending towards big area (> 30cm
2) development changed, production big area (>30cm
2) semiconductor film material is the developing direction of future semiconductor industry especially liquid crystal display material and solar cell.
But traditional capacitiveiy coupled plasma source (capacitively coupled plasma, CCP) can not meet the demands far away, microwave excited plasma electric discharge has several diverse ways:
(1) micro-wave energy and plasma generator are coupled.Such as carry out handle assembly by a box horn with window on the reactor wall and be separated into high-low pressure two portions.Generation plasma body around antenna, but plasma body can only be increased by increase electromagnetic horn and window.And be uneven under normal circumstances.
(2) can distance antenna be increased by electron cyclotron resonace mechanism and the low-voltage plasma of wall compared with far region occur.But this limitation is applied to hypobaric situation.
(3) there is a kind of microwave plasma source can export couple microwave energy at the narrow limit place of a rectangular waveguide, can be shielded by suitable window at the narrow limit place plasma of rectangular waveguide.The length of waveguide essentially dictates the linear extent of plasma body.The homogeneity of plasma body is mainly by the impact of microwave radiation near field.
Utility model content
The purpose of this utility model overcomes above the deficiencies in the prior art, the equipment of the plasma-deposited film of a kind of coaxial microwave is provided, this equipment arranges coaxial microwave plasma source, the plasma vertically in the distribution of line shape can be produced, in this plasma source, plasma body itself is also the necessary medium of microwave transmission, coaxial line waveguide realizes outer electric discharge in discharge cavity, plasma body is formed at the area of low pressure of coaxial line outside, also serve as the effect of outer conductor simultaneously, realize stable discharging, and obtain the high density plasma of height radial symmetry.The electron density of plasma body and the instrument of electronic temp test is also provided with in equipment, and power and air pressure automatic control equipment and system, stable, that controllability is strong plasma body can be obtained, efficient, stable, uniform deposit film can be realized, this production efficiency of equipment is high, and production cost is low.
The technical scheme that the utility model is adopted for achieving the above object is: the equipment of the plasma-deposited film of a kind of coaxial microwave, comprise vacuum chamber, it is characterized in that, described vacuum chamber is installed with coaxial microwave plasma source, described coaxial microwave plasma source comprises microwave generator, waveguide, coaxial line transformer, silica tube and interior electrode, wherein, silica tube is positioned at vacuum chamber inside and is fixedly installed on vacuum chamber two side, coaxial line transformer is fixedly installed in silica tube two ends by vacuum chamber outer side wall coaxial-symmetrical, coaxial line transformer is connected with microwave generator by waveguide simultaneously, interior electrode passes silica tube and is fixed in coaxial line transformer, interior electrode, coaxial line transformer, silica tube three is coaxial, vacuum chamber top is provided with inlet pipe,
At least one position of chamber bottom, top or sidepiece is movably installed with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountable on brace table sample bench is installed, between brace table and sample bench, is provided with insulation layer;
Vacuum chamber sidewall is installed with Diagnostic Test Set, plasma probe one end is connected on Diagnostic Test Set, its the other end stretches into vacuum chamber inside, vacuum chamber sidewall is also connected with vacuum pipe, vacuum unit is connected on vacuum pipe, vacuum pipe is provided with valve control device and air pressure test instrument;
Feedback control system is connected with microwave generator, Diagnostic Test Set, valve control device and air pressure test instrument respectively;
Described vacuum chamber and interior electrode are provided with cooling water pipeline, and vacuum chamber wall are provided with chamber cooling water inlet and chamber cooling water outlet, interior electrode wall is provided with interior cooling of electrode water inlet and interior cooling of electrode water out.
The microwave trigger mode of described microwave generator is external trigger, and microwave output pattern is continuous mode or pulse mode, and continuous mode peak power output is 2000W, and the peak power of pulse mode is 4000W.
Described interior electrode is conductive metal pipe, and its material is copper.
The level attitude of described chamber cooling water outlet is higher than chamber cooling water inlet.
Described vacuum chamber wall is also provided with reactant gases inlet pipe.
On described vacuum chamber, hard-wired coaxial microwave plasma source is that one group or at least two group horizontal parallel are equidistantly arranged.
Described brace table is provided with well heater, and well heater is connected with temperature regulator.
Described sample bench is also connected with grid bias power supply.
Described inlet pipe lower end is provided with at least one airway, and airway level is fixed and every root airway offers at least one venting slit, or at least 2 equally spaced ventilating pits, to form air curtain type ventilation.
The beneficial effect of the utility model equipment is:
(1) microwave is inputted by coaxial line two ends by this equipment simultaneously, can obtain at axis and all uniform plasma body of radial direction.If multiple coaxial line is placed in parallel in discharge cavity, then can expands the area of homogeneous plasma easily at double, have broad application prospects.
(2) in equipment, the plasma body that silica tube outside produces with together constitute coaxial waveguide as electrode conducting rod in microwave transmitting antenna, it not only constitutes microwave pad, also plays a part to transmit microwave energy simultaneously.By regulating the degree of coupling of microwave and the pressure of gas of input, big area, homogeneous plasma can be produced.
(3) medium source of the gas is imported in plasma downstream region, gas decomposes and deposits in sample table under microwave plasma effect, growth forms thin-film material, the probe diagnostics system of Equipments Setting can move in plasma body upstream and downstream district, to diagnose the space distribution situation of discharge chamber plasma body, and feed back to feedback control system, this system Real-Time Monitoring plasma electron density and electronic temp, also has air pressure size, automatically the size of valve on the power of microwave generator and vacuum pipe is regulated according to need of production, the density of the plasma body in real-time control vacuum cavity and air pressure, realize in real time, effective process control.
Accompanying drawing explanation
Fig. 1 is the device structure schematic diagram of the plasma-deposited film of a kind of coaxial microwave.
In figure: 1 microwave generator, 2 waveguides, 3 coaxial line transformer, 4 silica tubes, 5 airways, 6 inlet pipe, electrode in 7, cooling of electrode water inlet in 8, 9 reactant gases inlet pipe, 10 vacuum chambers, 11 brace tables, 12 well heaters, 13 insulation layers, 14 plasma probes, 15 temperature regulators, 16 apparatus for adjusting position, 17 position controls, 18 sample benchs, 19 vacuum pipes, 20 valve control devices, 21 air pressure test instruments, 22 vacuum units, 23 chamber cooling water inlets, 24 Diagnostic Test Sets, 25 feedback control systems, 26 chamber cooling water outlets, cooling of electrode water out in 27, 28 grid bias power supplies
Embodiment
Below in conjunction with accompanying drawing, the utility model is described further, but the utility model is not limited to specific embodiment.
Embodiment 1
The equipment of the plasma-deposited film of a kind of coaxial microwave as shown in Figure 1, comprise vacuum chamber, vacuum chamber is installed with coaxial microwave plasma source, coaxial microwave plasma source comprises microwave generator, waveguide, coaxial line transformer, silica tube and interior electrode, wherein, silica tube is positioned at vacuum chamber inside and is fixedly installed on vacuum chamber two side, coaxial line transformer is fixedly installed in silica tube two ends by vacuum chamber outer side wall coaxial-symmetrical, coaxial line transformer is connected with microwave generator by waveguide simultaneously, interior electrode passes silica tube and is fixed in coaxial line transformer, interior electrode, coaxial line transformer, silica tube three is coaxial, vacuum chamber top is provided with inlet pipe, discharge gas Ar, O
2, H
2or N
2one or more and reactant gases SiH
4and/or CH
4entered in chamber by inlet pipe.
It is the microwave of 2.45GHz that this equipment microwave coaxial plasma source produces frequency by external trigger.After waveguide and coaxial line transformer and interior electrode, microwave is inputted the vacuum chamber being filled with special component gas simultaneously by coaxial line two ends.Realize outer electric discharge outward at silica tube, obtain the high density plasma of height radial symmetry, interior electrode is contact tube.
The plasma body that silica tube outside produces together constitutes coaxial waveguide with the copper conductor rod as microwave transmitting antenna.
Chamber bottom is movably installed with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountablely on brace table is provided with sample bench, is provided with insulation layer between brace table and sample bench; Brace table is provided with well heater, well heater is connected with temperature regulator, can realize controlling the heating and temperaturel of workpiece, brace table is the highest is heated to 600 DEG C, sample bench is also connected with grid bias power supply, and can apply-200V to+200V bias voltage, on sample bench, place work piece carries out plated film simultaneously, sample bench can move up and down, and achieves controlled, the effective plated film of workpiece.
Vacuum chamber sidewall is installed with Diagnostic Test Set 24, plasma probe 14 one end is connected on Diagnostic Test Set, its the other end stretches into vacuum chamber inside, vacuum chamber sidewall is also connected with vacuum pipe 19, vacuum unit 22 is connected on vacuum pipe, vacuum pipe is provided with valve control device 20 and air pressure test instrument 21, valve control device comprises slide valve and controller, and air pressure test instrument is vacuumometer.
Feedback control system 25 is connected with microwave generator 1, Diagnostic Test Set 24, valve control device 20 and air pressure test instrument 21 respectively.
Plasma probe in equipment can move in plasma body upstream and downstream district, to diagnose the space distribution situation of vacuum chamber plasma body, and feed back to feedback control system, this system Real-Time Monitoring plasma electron density and electronic temp, air pressure test instrument in equipment can test the air pressure size of vacuum chamber, according to the output rating of need of production feedback control system regulating and controlling microwave source, the density of the plasma body in real-time control vacuum cavity, the air pressure of air pressure test instrument Real-Time Monitoring vacuum chamber also feeds back to feedback control system, feedback control system controls the pumping speed of vacuum by valve control device on vacuum pipe, thus control air pressure size, overall realization in real time, effective process control.
Vacuum chamber wall 10 and interior electrode 7 are provided with cooling water pipeline, and vacuum chamber wall is provided with cooling water inlet, bottom 23 and bottom cooling water outlet 26, interior electrode 7 wall is provided with interior cooling of electrode water inlet 8 and interior cooling of electrode water out 27, the level attitude of chamber cooling water outlet is higher than chamber cooling water inlet.
The microwave trigger mode of microwave generator is external trigger, and microwave output pattern is continuous mode, and continuous mode peak power output is 1000W.
On vacuum chamber, hard-wired coaxial microwave plasma source is one group.
Inlet pipe lower end is provided with an airway, and airway level is fixed and offered a venting slit, to form air curtain type ventilation.
Vacuum chamber wall is also provided with reactant gases air inlet 9, reactant gases SiH
4and/or CH
4vacuum chamber can be entered by this inlet pipe.
Embodiment 2
Identical with embodiment 1 content, different technical parameters is:
(1) chamber bottom and top movable are provided with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountablely on brace table is provided with sample bench, is provided with insulation layer between brace table and sample bench;
(2) the microwave trigger mode of microwave generator is external trigger, and microwave output pattern is continuous mode, and continuous mode peak power output is 1500W.
(3) on vacuum chamber, hard-wired coaxial microwave plasma source is that 4 groups of horizontal parallel are equidistantly arranged.
(4) inlet pipe lower end is provided with 3 airways, and airway level is fixed and every root airway offers 8 equally spaced ventilating pits, to form air curtain type ventilation.Realize passing into gas to chamber interior uniform high-efficiency.
Adopt equipment described in embodiment 2 to carry out the deposition of film, be specially:
What pass into inside inlet pipe 6 and airway 5 is high-purity N
2gas, that reactant gases inlet pipe 9 passes into is SiH
4.
Sample table Heating temperature is 400 DEG C, applies-100V negative bias, at deposited on substrates SiN
xfilm.
Embodiment 3
Identical with embodiment 1 content, different technical parameters is:
(1) chamber bottom and sidepiece are movably installed with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountablely on brace table is provided with sample bench, is provided with insulation layer between brace table and sample bench;
(2) the microwave trigger mode of microwave generator is external trigger, and microwave output pattern is continuous mode, and continuous mode peak power output is 2000W.
(3) on vacuum chamber, hard-wired coaxial microwave plasma source is that 8 groups of horizontal parallel are equidistantly arranged.
(4) inlet pipe lower end is provided with 7 airways, and every root airway level is fixed and every root airway offers 12 equally spaced ventilating pits, to form air curtain type ventilation.Realize passing into gas to chamber interior uniform high-efficiency.
Embodiment 4
Identical with embodiment 1 content, different technical parameters is:
(1) vacuum chamber top and sidepiece are movably installed with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountablely on brace table is provided with sample bench, is provided with insulation layer between brace table and sample bench;
(2) the microwave trigger mode of microwave generator is external trigger, and microwave output pattern is pulse mode, and the peak power of pulse mode is 1200W, and dutycycle is 50%.
(3) on vacuum chamber, hard-wired coaxial microwave plasma source is that 6 groups of horizontal parallel are equidistantly arranged.
(4) inlet pipe lower end is provided with 5 airways, and airway level is fixed and every root airway offers 2 venting slit, to form air curtain type ventilation.Realize passing into gas to chamber interior uniform high-efficiency.
Embodiment 5
Identical with embodiment 1 content, different technical parameters is:
(1) vacuum chamber top, bottom and sidepiece are movably installed with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountable on brace table sample bench is installed, between brace table and sample bench, is provided with insulation layer;
(2) the microwave trigger mode of microwave generator is external trigger, and microwave output pattern is pulse mode, and the peak power of pulse mode is 2000W, and dutycycle is 50%.
(3) on vacuum chamber, hard-wired coaxial microwave plasma source is that 10 groups of horizontal parallel are equidistantly arranged.
(4) inlet pipe lower end is provided with 9 airways, and airway level is fixed and offered 10 equally spaced ventilating pits, to form air curtain type ventilation.Realize passing into gas to chamber interior uniform high-efficiency.
Embodiment 6
(1) vacuum chamber top and bottom are movably installed with brace table, vacuum chamber wall link position setting device is stretched out in brace table lower end, apparatus for adjusting position is connected with position control, dismountablely on brace table is provided with sample bench, is provided with insulation layer between brace table and sample bench;
(2) the microwave trigger mode of microwave generator is external trigger, and microwave output pattern is pulse mode, and the peak power of pulse mode is 4000W, and dutycycle is 50%.
(3) on vacuum chamber, hard-wired coaxial microwave plasma source is that 15 groups of horizontal parallel are equidistantly arranged.
(4) inlet pipe lower end is provided with 10 airways, and airway level is fixed and offered 18 equally spaced ventilating pits, to form air curtain type ventilation.Realize passing into gas to chamber interior uniform high-efficiency.
Embodiment 7
The equipment of the utility model embodiment 1 is adopted to carry out microwave plasma deposition film, the distance Z of adjustment microwave power, hydrogen argon total flux (hydrogen argon throughput ratio is fixed as 3) and plasma probe distance silica tube is three factor design diagnostic tests of orthogonal experiment, and figure below is orthogonal design table:
After test, obtain be nine groups of orthogonal experiments diagnose the electron density Ne that obtains and electronic temp Te distribution plan as follows:
Most of 10 along the axial mid-way electron density Ne of two silica tubes as seen from the figure
10cm
-3above, under some discharge parameter (as being 1000W at microwave power, hydrogen argon total flux be 80sccm and be 7cm apart from silica tube distance Z time), electron density Ne is distribution uniform vertically.Entirety can be found out, along with microwave power is increased to 1000W by 500W, plasma electron density Ne value is by 1E+10 (cm
-3) be increased to 3.5E+10 (cm
-3), increasing degree is maximum, can judge that this equipment can produce the larger plasma source of electron density thus.
Claims (9)
1. the equipment of the plasma-deposited film of coaxial microwave, comprise vacuum chamber (10), it is characterized in that, described vacuum chamber is installed with coaxial microwave plasma source, described coaxial microwave plasma source comprises microwave generator (1), waveguide (2), coaxial line transformer (3), silica tube (4) and interior electrode (7), wherein, silica tube (4) is positioned at vacuum chamber (10) inside and is fixedly installed on vacuum chamber two side, coaxial line transformer (3) is fixedly installed in silica tube (4) two ends by vacuum chamber outer side wall coaxial-symmetrical, coaxial line transformer (3) is connected with microwave generator (1) by waveguide (2) simultaneously, interior electrode (7) is through silica tube and be fixed in coaxial line transformer, interior electrode (7), coaxial line transformer (3), silica tube (4) three is coaxial, vacuum chamber top is provided with inlet pipe (6),
At least one position of chamber bottom, top or sidepiece is movably installed with brace table (11), vacuum chamber wall link position setting device (16) is stretched out in brace table lower end, apparatus for adjusting position is connected with position control (17), dismountable on brace table sample bench (18) is installed, between brace table and sample bench (18), is provided with insulation layer (13);
Vacuum chamber sidewall is installed with Diagnostic Test Set (24), plasma probe (14) one end is connected on Diagnostic Test Set, its the other end stretches into vacuum chamber inside, vacuum chamber sidewall is also connected with vacuum pipe (19), vacuum unit (22) is connected on vacuum pipe, vacuum pipe is provided with valve control device (20) and air pressure test instrument (21);
Feedback control system (25) is connected with microwave generator (1), Diagnostic Test Set (24), valve control device (20) and air pressure test instrument (21) respectively;
Described vacuum chamber (10) and interior electrode (7) are provided with cooling water pipeline, and vacuum chamber wall is provided with chamber cooling water inlet (23) and chamber cooling water outlet (26), interior electrode (7) wall is provided with interior cooling of electrode water inlet (8) and interior cooling of electrode water out (27).
2. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, it is characterized in that, the microwave trigger mode of described microwave generator is external trigger, microwave output pattern is continuous mode or pulse mode, continuous mode peak power output is 2000W, and the peak power of pulse mode is 4000W.
3. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, is characterized in that, described interior electrode is conductive metal pipe, and its material is copper.
4. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, is characterized in that, the level attitude of described chamber cooling water outlet (26) is higher than chamber cooling water inlet (23).
5. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, is characterized in that, described vacuum chamber (10) wall is also provided with reactant gases inlet pipe (9).
6. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, is characterized in that, on described vacuum chamber, hard-wired coaxial microwave plasma source is that one group or at least two group horizontal parallel are equidistantly arranged.
7. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, is characterized in that, described brace table is provided with well heater (12), and well heater is connected with temperature regulator (15).
8. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, is characterized in that, described sample bench (18) is also connected with grid bias power supply (28).
9. the equipment of the plasma-deposited film of a kind of coaxial microwave according to claim 1, it is characterized in that, described inlet pipe lower end is provided with at least one airway (5), airway level is fixed and every root airway offers at least one venting slit, or at least 2 equally spaced ventilating pits, to form air curtain type ventilation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420654039.0U CN204185556U (en) | 2014-11-04 | 2014-11-04 | The equipment of the plasma-deposited film of a kind of coaxial microwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420654039.0U CN204185556U (en) | 2014-11-04 | 2014-11-04 | The equipment of the plasma-deposited film of a kind of coaxial microwave |
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|---|---|
| CN204185556U true CN204185556U (en) | 2015-03-04 |
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ID=52617568
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|---|---|---|---|
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107940970A (en) * | 2017-12-19 | 2018-04-20 | 大连理工常州研究院有限公司 | A kind of Novel disc-type drier |
| CN108611619A (en) * | 2018-07-25 | 2018-10-02 | 衡阳舜达精工科技有限公司 | Magnetron sputtering/microwave surface wave depositing system |
| CN116162925A (en) * | 2022-12-29 | 2023-05-26 | 浙江合特光电有限公司 | Microwave device of PECVD (plasma enhanced chemical vapor deposition) equipment |
-
2014
- 2014-11-04 CN CN201420654039.0U patent/CN204185556U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107940970A (en) * | 2017-12-19 | 2018-04-20 | 大连理工常州研究院有限公司 | A kind of Novel disc-type drier |
| CN107940970B (en) * | 2017-12-19 | 2023-04-07 | 大连理工常州研究院有限公司 | Novel disc type dryer |
| CN108611619A (en) * | 2018-07-25 | 2018-10-02 | 衡阳舜达精工科技有限公司 | Magnetron sputtering/microwave surface wave depositing system |
| CN116162925A (en) * | 2022-12-29 | 2023-05-26 | 浙江合特光电有限公司 | Microwave device of PECVD (plasma enhanced chemical vapor deposition) equipment |
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|---|---|---|---|
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150304 Termination date: 20211104 |