CN204119076U - Three-level three-phase bridge circuit and modular construction thereof - Google Patents
Three-level three-phase bridge circuit and modular construction thereof Download PDFInfo
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- CN204119076U CN204119076U CN201420535754.2U CN201420535754U CN204119076U CN 204119076 U CN204119076 U CN 204119076U CN 201420535754 U CN201420535754 U CN 201420535754U CN 204119076 U CN204119076 U CN 204119076U
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Abstract
The utility model discloses a kind of three-level three-phase bridge circuit and modular construction thereof, in three-level three-phase bridge circuit any one includes the DC capacitor of two groups of circuit units in parallel and 2 series connection mutually, often organize circuit unit and comprise the IGBT that connects successively to the 4th IGBT and 2 clamp diode, each IGBT is also provided with fly-wheel diode antiparallel with it; The collector electrode of IGBT corresponding in two groups of circuit units of any phase and emitter short circuit respectively, the DC capacitor of 2 series connection is parallel between the positive and negative electrode input of direct current, and the mid point of 2 DC capacitors is connected as direct voltage mid point with the mid point of 2 of series connection clamp diodes.Adopt the three-level three-phase bridge circuit that the utility model proposes, effectively can increase output current.In addition, have also been devised modular construction, this modular structure effectively reduces the stray inductance of main circuit, reduces the shutoff overvoltage of IGBT.
Description
Technical field
The utility model relates to field of power electronics, more particularly, relates to a kind of three-level three-phase bridge circuit and modular construction thereof.
Background technology
Along with the development of modern Semiconductor Converting Technology, new technology is widely used in industrial equipment.Three-level current transformer is a kind of PWM converter that can be used for high-power, has power factor close to 1, and switching voltage stress reduces the advantage of half than two level.But current full control device for power switching electric current is large not, can not meet the application of some occasions.Meanwhile, in practical engineering application, due to the existence of main circuit stray inductance, there is overvoltage problem significantly in three-level current transformer IGBT normal turn-off process, how project organization reduces the problem that circuit stray inductance is a more complicated.
Utility model content
For the defect existed in prior art, the purpose of this utility model is to provide a kind of three-level three-phase bridge circuit and modular construction thereof.
For achieving the above object, the utility model adopts following technical scheme:
According to one side of the present utility model, provide a kind of three-level three-phase bridge circuit, be located between direct current and three-phase alternating current,
In described three-level three-phase bridge circuit any one includes two groups of circuit units in parallel and 2 DC capacitors of connecting mutually, often organize circuit unit and comprise the IGBT that connects successively to the 4th IGBT and 2 clamp diode, each IGBT is also provided with fly-wheel diode antiparallel with it; Wherein, the emitter of an IGBT is connected with the collector electrode of the 2nd IGBT, and the emitter of the 2nd IGBT is connected with the collector electrode of the 3rd IGBT, and the emitter of the 3rd IGBT is connected with the collector electrode of the 4th; Be connected in parallel between the collector electrode of the 2nd IGBT and the emitter of the 3rd IGBT after described 2 clamp diodes series connection; Wherein, the negative electrode of the first clamp diode is connected with the collector electrode of described 2nd IGBT, and the anode of the second clamp diode is connected with the emitter of described 3rd IGBT;
The collector electrode of the corresponding IGBT in two groups of circuit units in any phase and emitter be short circuit respectively, and wherein, the collector electrode short circuit of the IGBT in described two groups of circuit units is also connected with the electrode input end of direct current; The emitter short circuit of the 4th IGBT in described two groups of circuit units is also connected with the negative input of direct current; The emitter short circuit of the 2nd IGBT in described two groups of circuit units as this cross streams output;
The DC capacitor of 2 series connection in any phase is parallel between the positive and negative electrode input of direct current, and the mid point of 2 DC capacitors is connected as direct voltage mid point with the mid point of 2 of series connection clamp diodes.
The collector electrode often organizing the 2nd IGBT in circuit unit in described any phase and be equipped with absorption circuit between emitter, between the collector electrode of the 3rd IGBT and emitter, described absorption circuit comprises absorption resistance and the Absorption Capacitance of series connection.
According to another aspect of the present utility model, additionally provide a kind of modular construction realizing above-mentioned three-level three-phase bridge circuit,
The described described IGBT in circuit unit and fly-wheel diode antiparallel with it, described 2nd IGBT and fly-wheel diode antiparallel with it and the first clamp diode of often organizing is encapsulated as M1 module;
Described described 3rd IGBT in circuit unit and fly-wheel diode antiparallel with it, described 4th IGBT and fly-wheel diode antiparallel with it and the second clamp diode of often organizing is encapsulated as M2 module;
Two groups of circuit units of described any phase adopt following order horizontal interval to install on a heat sink: the M2 module in the M2 module in the M1 module in first group of circuit unit, first group of circuit unit, the M1 module in second group of circuit unit, second group of circuit unit.
Between the collector electrode, emitter of the 2nd IGBT described in M1 module, connect absorption circuit, absorption circuit comprises absorption resistance and the Absorption Capacitance of series connection.
Between the collector electrode, emitter of the 3rd IGBT described in M2 module, connect absorption circuit, absorption circuit comprises absorption resistance and the Absorption Capacitance of series connection.
Compared with prior art, adopt a kind of three-level three-phase bridge circuit of the present utility model, effectively can increase output current.
In addition, have also been devised modular construction, this modular structure effectively reduces the stray inductance of main circuit, reduces the shutoff overvoltage of IGBT.
Accompanying drawing explanation
Fig. 1 is main circuit schematic diagram of the present utility model;
Fig. 2 is the circuit diagram of first bridge arm module in Fig. 1;
Fig. 3 is the circuit diagram of second bridge arm module in Fig. 1;
Fig. 4 is modularize structure icon of the present utility model.
Embodiment
The technical solution of the utility model is further illustrated below in conjunction with drawings and Examples.
As shown in Figure 1, the utility model is a kind of three-level three-phase bridge circuit, each is two groups of circuit units in parallel mutually, each group circuit unit comprises an IGBT to the 4th IGBT, the first clamp diode and the second clamp diode, and each IGBT comprises antiparallel sustained diode a11, Da21, Da31, Da41 with it.For A phase, four IGBT in first group of circuit unit are rods arranged in horizontal line, and namely the emitter of Ta11 is connected with the collector electrode of Ta21, and the emitter of Ta21 is connected with the collector electrode of Ta31, and the emitter of Ta31 is connected with the collector electrode of Ta41.Absorption circuit is parallel with between the collector and emitter of Ta21, Ta31.Absorption circuit is composed in series by absorption resistance Ra1/Ra2 and Absorption Capacitance Ca1/Ca2.First clamp diode Da1 and the second clamp diode Da2 is connected in parallel between the collector electrode of Ta21 and the emitter of Ta31 after connecting.IGBT correspondence in two groups of circuit units of each phase is together in parallel, the collector and emitter of the Ta12/Ta22/Ta32/Ta42 in Ta11/Ta21/Ta31/Ta41 and the second group circuit unit namely in first group of circuit unit respectively short circuit gets up, wherein, it is direct-flow positive pole input after the collector electrode short circuit of Ta11 and Ta12 gets up, being direct current negative input after the emitter short circuit of Ta41 and Ta42 gets up, is ac output end after the emitter short circuit of Ta21 and Ta22 gets up.Each phase is all with DC capacitor Cda1, Cda2 of 2 series connection, and 2 DC capacitors are connected in parallel between the both positive and negative polarity of direct-flow input end again after connecting; Being coupled together by the mid point of clamp diode Da1, Da2 of the mid point of 2 electric capacity and series connection, is direct voltage mid point.Often to be composed in parallel by two groups of circuit units like this, can the current flowing ability of increasing circuit effectively, increase one times than time in parallel.
As shown in Figures 2 and 3, in each group circuit unit, an IGBT, the 2nd IGBT and the first clamp diode are encapsulated as M1 module, and in each group circuit unit, the 3rd IGBT, the 4th IGBT and the second clamp diode are encapsulated as M2 module.So, each group circuit unit can be considered a M1 module and a M2 block coupled in series.
By three-level three-phase bridge circuit, each is designed to a modular structure mutually, comprises two M1 and two M2, installs on a heat sink, and each module connected according to above-described circuit connecting mode according to M1, M2, M1, M2 order.Absorption circuit is connected between the collector electrode, emitter of the 2nd IGBT described in M1 module.Absorption circuit is connected between the collector electrode, emitter of the 3rd IGBT described in M2 module.Absorption circuit comprises absorption resistance and the Absorption Capacitance of series connection.Modular construction after connection as shown in Figure 4.This modular structure effectively reduces the stray inductance of main circuit, reduces the shutoff overvoltage of IGBT.
If adopt other erection sequences, such as M1 module, M1 module, M2 module, M2 module, the stray inductance of main circuit can be higher, causes the shutoff overvoltage of IGBT too high, has the danger damaging IGBT.
Those of ordinary skill in the art will be appreciated that, above embodiment is only used to the purpose of this utility model is described, and be not used as restriction of the present utility model, as long as in essential scope of the present utility model, the change of the above embodiment, modification all will be dropped in the scope of claim of the present utility model.
Claims (5)
1. a three-level three-phase bridge circuit, is located between direct current and three-phase alternating current, it is characterized in that,
In described three-level three-phase bridge circuit any one includes two groups of circuit units in parallel and 2 DC capacitors of connecting mutually, often organize circuit unit and comprise the IGBT that connects successively to the 4th IGBT and 2 clamp diode, each IGBT is also provided with fly-wheel diode antiparallel with it; Wherein, the emitter of an IGBT is connected with the collector electrode of the 2nd IGBT, and the emitter of the 2nd IGBT is connected with the collector electrode of the 3rd IGBT, and the emitter of the 3rd IGBT is connected with the collector electrode of the 4th; Be connected in parallel between the collector electrode of the 2nd IGBT and the emitter of the 3rd IGBT after described 2 clamp diodes series connection; Wherein, the negative electrode of the first clamp diode is connected with the collector electrode of described 2nd IGBT, and the anode of the second clamp diode is connected with the emitter of described 3rd IGBT;
The collector electrode of the corresponding IGBT in two groups of circuit units in any phase and emitter be short circuit respectively, and wherein, the collector electrode short circuit of the IGBT in described two groups of circuit units is also connected with the electrode input end of direct current; The emitter short circuit of the 4th IGBT in described two groups of circuit units is also connected with the negative input of direct current; The emitter short circuit of the 2nd IGBT in described two groups of circuit units as this cross streams output;
The DC capacitor of 2 series connection in any phase is parallel between the positive and negative electrode input of direct current, and the mid point of 2 DC capacitors is connected as direct voltage mid point with the mid point of 2 of series connection clamp diodes.
2. three-level three-phase bridge circuit according to claim 1, is characterized in that,
The collector electrode often organizing the 2nd IGBT in circuit unit in described any phase and all establishing by absorption circuit between emitter, between the collector electrode of the 3rd IGBT and emitter, described absorption circuit comprises absorption resistance and the Absorption Capacitance of series connection.
3. realize a modular construction for three-level three-phase bridge circuit according to claim 1, it is characterized in that,
The described described IGBT in circuit unit and fly-wheel diode antiparallel with it, described 2nd IGBT and fly-wheel diode antiparallel with it and the first clamp diode of often organizing is encapsulated as M1 module;
Described described 3rd IGBT in circuit unit and fly-wheel diode antiparallel with it, described 4th IGBT and fly-wheel diode antiparallel with it and the second clamp diode of often organizing is encapsulated as M2 module.
4. modular construction according to claim 3, is characterized in that,
Two groups of circuit units of described any phase adopt following order horizontal interval to install on a heat sink: the M2 module in the M2 module in the M1 module in first group of circuit unit, first group of circuit unit, the M1 module in second group of circuit unit, second group of circuit unit.
5. modular construction according to claim 3, is characterized in that,
All establish by absorption circuit between the collector electrode of the 3rd IGBT between the collector electrode of the 2nd IGBT in described M1 module, emitter and in described M2 module, emitter, described absorption circuit comprises absorption resistance and the Absorption Capacitance of series connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420535754.2U CN204119076U (en) | 2014-09-17 | 2014-09-17 | Three-level three-phase bridge circuit and modular construction thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420535754.2U CN204119076U (en) | 2014-09-17 | 2014-09-17 | Three-level three-phase bridge circuit and modular construction thereof |
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| Publication Number | Publication Date |
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| CN204119076U true CN204119076U (en) | 2015-01-21 |
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| CN201420535754.2U Expired - Fee Related CN204119076U (en) | 2014-09-17 | 2014-09-17 | Three-level three-phase bridge circuit and modular construction thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300819A (en) * | 2014-09-17 | 2015-01-21 | 思源清能电气电子有限公司 | Three-level three-phase bridge circuit and modular structure thereof |
| TWI568152B (en) * | 2015-12-18 | 2017-01-21 | 旭隼科技股份有限公司 | Three-level inverter circuit |
-
2014
- 2014-09-17 CN CN201420535754.2U patent/CN204119076U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300819A (en) * | 2014-09-17 | 2015-01-21 | 思源清能电气电子有限公司 | Three-level three-phase bridge circuit and modular structure thereof |
| TWI568152B (en) * | 2015-12-18 | 2017-01-21 | 旭隼科技股份有限公司 | Three-level inverter circuit |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20200917 |
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| CF01 | Termination of patent right due to non-payment of annual fee |