CN204104026U - The pixel cell of imageing sensor and imageing sensor - Google Patents
The pixel cell of imageing sensor and imageing sensor Download PDFInfo
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- CN204104026U CN204104026U CN201420454985.0U CN201420454985U CN204104026U CN 204104026 U CN204104026 U CN 204104026U CN 201420454985 U CN201420454985 U CN 201420454985U CN 204104026 U CN204104026 U CN 204104026U
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Abstract
The utility model discloses a kind of pixel cell and imageing sensor of imageing sensor, and the pixel cell of imageing sensor comprises: the control end of reseting module is connected with reseting controling signal providing end, and the first end of reseting module is connected with power supply providing end; One end ground connection of photoelectric conversion module; The control end of transport module is connected with transmission of control signals providing end, and the first end of transport module is connected with the other end of photoelectric conversion module, and the second end of transport module is connected with the second end of reseting module; The first end of clamper module is connected with the second end of transport module with the second end of reseting module respectively, and the second end of clamper module is connected with the first predetermined level providing end; The control end of output module is connected with the first end of clamper module with the second end of reseting module, the second end of transport module respectively, and the first end of output module is connected with power supply providing end, and the output of output module is connected with the row reading circuit of imageing sensor.The utility model can prevent solar spot.
Description
Technical field
The utility model relates to technical field of image processing, particularly a kind of pixel cell of imageing sensor and a kind of imageing sensor.
Background technology
CMOS (Complementary Metal Oxide Semiconductor) field effect imageing sensor is called for short CMOS (Complementary Metal Oxide Semiconductor, CMOS (Complementary Metal Oxide Semiconductor)) imageing sensor, the main composition of cmos image sensor is analog part and data image signal processing section.Particularly, cmos image sensor mainly comprises Pixel Array (pixel cell), control circuit, AFE (analog front end) treatment circuit, A/D converter, imaging signal processing circuit and related memory cell etc.Along with the development of cmos image sensor, the research of people to cmos image sensor is also more and more deep, and its performance is also promoted significantly.But, due to cmos image sensor process structure and itself, when light is crossed strong, the voltage of the reset samples signal of imageing sensor can decline, and after light intensity exceedes certain limit, reset samples signal fall off rate increases along with the increase of light intensity.This phenomenon will cause imageing sensor to occur solar spot phenomenon when light intensity is stronger, and such as, when taking pictures facing to the sun, in photograph, the blackspot of certain limit appears in the central area of the sun.
Correlation technique, in order to avoid there is this solar spot phenomenon, removes solar spot by following two kinds of modes.1, the mode by numeral: first to whether occurring that solar spot phenomenon judges, when think there is solar spot phenomenon time, blackspot region is compensated, namely adjust blackspot region reach consistent to make blackspot region with the brightness value of blackspot peripheral region.2, mode by simulation: first to whether occurring that solar spot phenomenon judges, namely the difference between reset samples level and reference level is judged, then judge to occur solar spot phenomenon when difference exceedes certain value, and then the fixed level adopting fixed level to produce circuit generation serves as reset samples level to correct the solar spot phenomenon caused because reset samples level declines.
Carry out solar spot removal by the mode of numeral and the mode of simulation in correlation technique, there is following shortcoming: 1, the mode of numeral is easy to occur erroneous judgement, namely inaccurate to whether occurring that solar spot phenomenon judges.Such as may judge by accident black object, because the form of expression of black object is similar to solar spot, maybe correctly can not judge solar spot, such as, think that solar spot is black object etc.2, the fixed level that the mode of simulation adopts fixed level to produce circuit generation serves as reset samples level to carry out solar spot rectification, although be unlikely to occur misjudgment phenomenon, and, too much noise can be brought to sample circuit like this.Therefore, need to improve correlation technique.
Utility model content
The purpose of this utility model is intended to solve one of above-mentioned technical problem at least to a certain extent.
For this reason, an object of the present utility model is the pixel cell proposing a kind of imageing sensor, and the pixel cell of this imageing sensor can be removed solar spot accurately and produce circuit without the need to adding fixed level, substantially reduces the noise of signal chains.Another object of the present utility model is to propose a kind of imageing sensor.
For achieving the above object, the utility model proposes a kind of pixel cell of imageing sensor on the one hand, the pixel cell of this imageing sensor comprises: reseting module, the control end of described reseting module is connected with reseting controling signal providing end, and the first end of described reseting module is connected with the power supply providing end of imageing sensor; Photoelectric conversion module, one end ground connection of described photoelectric conversion module; Transport module, the control end of described transport module is connected with transmission of control signals providing end, and the first end of described transport module is connected with the other end of described photoelectric conversion module, and the second end of described transport module is connected with the second end of described reseting module; Clamper module, the first end of described clamper module is connected with the second end of described transport module with the second end of described reseting module respectively, and the second end of described clamper module is connected with the first predetermined level providing end; And output module, the control end of described output module is connected with the first end of described clamper module with the second end of described reseting module, the second end of described transport module respectively, the first end of described output module is connected with described power supply providing end, and the output of described output module is connected with the row reading circuit of imageing sensor.
The pixel cell of the imageing sensor that the utility model proposes, clamper is carried out with automatic the second terminal voltage to reseting module by increasing clamper module, thus prevent current pixel unit from occurring solar spot phenomenon, and produce circuit without the need to adding fixed level, substantially reduce the noise of signal chains.
Further, described clamper module is nmos pass transistor or PMOS transistor or diode.
Further, when described clamper module is nmos pass transistor, the first end of described nmos pass transistor is connected with the control end of described output module with the second end of described reseting module, the second end of described transport module respectively, and the second end of described nmos pass transistor is connected with described first predetermined level providing end with the control end of described nmos pass transistor respectively.
Further, when described clamper module is PMOS transistor, the first end of described PMOS transistor is connected with the control end of described output module with the second end of the control end of described PMOS transistor, described reseting module, the second end of described transport module respectively, and the second end of described PMOS transistor is connected with described first predetermined level providing end.
Further, when described clamper module is diode, the negative electrode of described diode is connected with the control end of described output module with the second end of the second end of described reseting module, described transport module, and the anode of described diode is connected with described first predetermined level providing end.
Further, described photoelectric conversion module is the plus earth of photodiode, described photodiode.
Further, described output module comprises: submodule is followed in source, the control end that submodule is followed in described source is connected with the first end of described clamper module with the second end of described reseting module, the second end of described transport module respectively, and the first end that submodule is followed in described source is connected with described power supply providing end; And row strobe sub-module, the second end that submodule is followed in first end and the described source of described row strobe sub-module is connected, and the second end of described row strobe sub-module is connected with the row reading circuit of described imageing sensor.
Further, described reseting module, described transport module, submodule is followed in described source and described row strobe sub-module is nmos pass transistor.
Further, described imageing sensor is cmos image sensor.
For achieving the above object, the utility model also proposed a kind of imageing sensor on the other hand, this imageing sensor comprises column decode circuitry, sample circuit, array decoding circuit, analog signal processing circuit, analog to digital conversion circuit and pixel unit array, wherein, described pixel unit array comprises the pixel cell of multiple described imageing sensor.
The imageing sensor that the utility model proposes carries out clamper by increasing clamper module in the pixel cell of imageing sensor with automatic the second terminal voltage to reseting module, thus prevent current pixel unit from occurring solar spot phenomenon, and produce circuit without the need to adding fixed level, substantially reduce the noise of signal chains.
The aspect that the utility model is additional and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present utility model.
Accompanying drawing explanation
The utility model above-mentioned and/or additional aspect and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Fig. 1 is the structural representation of the pixel cell of conventional image sensor;
Fig. 2 is when light is normal, the Control timing sequence of the pixel cell of conventional image sensor and the waveform schematic diagram of output voltage signal;
Fig. 3 is when light is crossed strong, the Control timing sequence of the pixel cell of conventional image sensor and the waveform schematic diagram of output voltage signal;
Fig. 4 is the structured flowchart of the pixel cell of imageing sensor according to the utility model embodiment;
Fig. 5 is the electrical block diagram of the pixel cell of imageing sensor according to the utility model embodiment;
Fig. 6 is the electrical block diagram of the pixel cell of imageing sensor according to another embodiment of the utility model;
Fig. 7 is the electrical block diagram of the pixel cell of imageing sensor according to another embodiment of the utility model;
Fig. 8 be according to the utility model embodiment when light is normal, the Control timing sequence of the pixel cell of imageing sensor and the waveform schematic diagram of output voltage signal;
Fig. 9 be according to the utility model embodiment when light is crossed strong, the Control timing sequence of the pixel cell of imageing sensor and the waveform schematic diagram of output voltage signal; And
Figure 10 is the structural representation of the imageing sensor according to the utility model embodiment.
Embodiment
Be described below in detail embodiment of the present utility model, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the utility model, and can not being interpreted as restriction of the present utility model.
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present utility model.Of the present utility model open in order to simplify, hereinafter the parts of specific examples and setting are described.Certainly, they are only example, and object does not lie in restriction the utility model.In addition, the utility model can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.In addition, the various specific technique that the utility model provides and the example of material, but those of ordinary skill in the art can recognize the property of can be applicable to of other techniques and/or the use of other materials.In addition, fisrt feature described below second feature it " on " structure can comprise the embodiment that the first and second features are formed as directly contact, also can comprise other feature and be formed in embodiment between the first and second features, such first and second features may not be direct contacts.
In description of the present utility model, it should be noted that, unless otherwise prescribed and limit, term " installation ", " being connected ", " connection " should be interpreted broadly, such as, can be mechanical connection or electrical connection, also can be the connection of two element internals, can be directly be connected, also indirectly can be connected by intermediary, for the ordinary skill in the art, the concrete meaning of above-mentioned term can be understood as the case may be.
Pixel cell 1 and the imageing sensor of the imageing sensor proposed according to the utility model embodiment are described with reference to the accompanying drawings.
First with reference to accompanying drawing, the reason occurring solar spot phenomenon in the pixel cell of conventional image sensor is described.
Fig. 1 is the structural representation of the pixel cell of conventional image sensor, wherein, Q1 ' is reset transistor, Q2 ' is transmission transistor, D1 ' is photodiode, FD ' is floating diffusion node, and Vout ' is output, the voltage swing of floating diffusion node FD ' and the proportional relation of voltage swing of output end vo ut '.
Fig. 2 is when light is normal, the Control timing sequence of the pixel cell of conventional image sensor and the waveform schematic diagram of output voltage signal.Wherein, RST ' is the Control timing sequence of reset transistor Q1 ', and TX ' is the Control timing sequence of transmission transistor Q2 ', and SHR '/SHS ' is reset signal sampling time sequence/photoelectron signal sampling time sequence, and Signal ' is the output voltage signal of output end vo ut '.Particularly, when RST ' is for high level, reset transistor Q1 ' conducting, reset transistor Q1 ' exports reset signal to floating diffusion node FD ' and output end vo ut ', when SHR ' is for high level, the reset signal of sampling floating diffusion node FD ' or output end vo ut ' is to obtain reset samples signal value Vshr '.When TX ' is for high level, transmission transistor Q2 ' conducting, the photoelectron signal of transmission transistor Q2 ' output photoelectric diode D1 ' is to floating diffusion node FD ' and output end vo ut ', when SHS ' is for high level, the photoelectron signal of sampling floating diffusion node FD ' or output end vo ut ' is to obtain photoelectron sampled signal values Vshs '.As shown in Figure 2, the difference DELTA V ' of reset samples signal value Vshr ' and photoelectron sampled signal values Vshs ' is picture signal, more namely light is stronger for photoelectron signal, and the difference DELTA V ' of reset samples signal value Vshr ' and photoelectron sampled signal values Vshs ' will be larger.But as shown in Figure 3, when light is crossed strong, the voltage of floating diffusion node FD ' and output end vo ut ' can decline rapidly after the reset, now, fall under reset samples signal value Vshr '.Owing to occurring that such difference causes the difference DELTA V ' of picture signal and reset samples signal value Vshr ' and photoelectron sampled signal values Vshs ' to reduce, thus there is solar spot phenomenon.It should be noted that, ideally, reset samples signal value Vshr ' does not fall down.
The pixel cell 1 of the imageing sensor proposed according to the utility model embodiment is described with reference to the accompanying drawings.
As shown in Figure 4, the pixel cell 1 of the imageing sensor of the utility model embodiment comprises: reseting module 10, photoelectric conversion module 20, transport module 30, clamper module 40 and output module 50.Wherein, the control end of reseting module 10 is connected with reseting controling signal providing end A, and the first end of reseting module 10 is connected with the power supply providing end D of imageing sensor.One end ground connection of photoelectric conversion module 20.The control end of transport module 30 is connected with transmission of control signals providing end B, and the first end of transport module 30 is connected with the other end of photoelectric conversion module 20, and the second end of transport module 30 is connected with the second end of reseting module 10.The first end of clamper module 40 is connected with the second end of transport module 30 with the second end of reseting module 10 respectively, second end of clamper module 40 is connected with the first predetermined level providing end C, has floating diffusion node FD between the second end of reseting module 10 and the second end of transport module 30.The control end of output module 50 is connected with the first end of clamper module 40 with the second end of reseting module 10, the second end of transport module 30 respectively, the first end of output module 50 is connected with power supply providing end D, and the output end vo ut of output module 50 is connected with the row reading circuit 2 of imageing sensor.
Particularly, in an embodiment of the present utility model, imageing sensor can be cmos image sensor etc.Further, in an embodiment of the present utility model, as shown in Fig. 5, Fig. 6 and Fig. 7, photoelectric conversion module 20 can be the plus earth of photodiode, photodiode.Further, in an embodiment of the present utility model, clamper module 40 can be nmos pass transistor or PMOS transistor or diode.In addition, as shown in Fig. 5, Fig. 6 and Fig. 7, in an embodiment of the present utility model, reseting module 10 and transport module 30 can be nmos pass transistor.
Further, in an embodiment of the present utility model, when clamper module 40 is nmos pass transistor, the first end of nmos pass transistor is connected with the control end of output module 50 with the second end of reseting module 10, the second end of transport module 30 respectively, and the second end of nmos pass transistor is connected with the first predetermined level providing end C with the control end of nmos pass transistor respectively.Particularly, in an embodiment of the present utility model, when clamper module 40 is nmos pass transistor, the circuit structure of the pixel cell 1 of imageing sensor as shown in Figure 5.Wherein, reseting module 10 is the first nmos pass transistor Q1, photoelectric conversion module 20 is the first photodiode D1, transport module 30 is the second nmos pass transistor Q2, clamper module 40 is the 3rd nmos pass transistor Q3, FD1 is the first floating diffusion node, and Vout1 is the first output, the voltage swing of the first floating diffusion node FD1 and the proportional relation of voltage swing of the first output end vo ut1.
In addition, in another embodiment of the present utility model, when clamper module 40 is PMOS transistor, the first end of PMOS transistor is connected with the control end of output module 50 with the control end of PMOS transistor, the second end of reseting module 10, the second end of transport module 30 respectively, and the second end of PMOS transistor is connected with the first predetermined level providing end C.Particularly, in an embodiment of the present utility model, when clamper module 40 is PMOS transistor, the circuit structure of the pixel cell 1 of imageing sensor as shown in Figure 6.Wherein, reseting module 10 is the 4th nmos pass transistor Q4, photoelectric conversion module 20 is the second photodiode D2, transport module 30 is the 5th nmos pass transistor Q5, clamper module 40 is PMOS transistor Q, FD2 is the second floating diffusion node, and Vout2 is the second output, the voltage swing of the second floating diffusion node FD2 and the proportional relation of voltage swing of the second output end vo ut2.
Particularly, as shown in Figure 7, in another embodiment of the present utility model, when clamper module 40 is diode D, the negative electrode of diode D is connected with the control end of output module 50 with the second end of the second end of reseting module 10, transport module 30, and the anode of diode D is connected with the first predetermined level providing end C.Further, as shown in Figure 7, reseting module 10 is the 6th nmos pass transistor Q6, photoelectric conversion module 20 is the 3rd photodiode D3, transport module 30 is the 7th nmos pass transistor Q7, and clamper module 40 is diode D4, FD3 is the 3rd floating diffusion node, Vout3 is the 3rd output, the voltage swing of the 3rd floating diffusion node FD3 and the proportional relation of voltage swing of the 3rd output end vo ut3.
Further, Fig. 8 is for when light is normal, the Control timing sequence of the pixel cell 1 of imageing sensor and the waveform schematic diagram of output voltage signal, wherein, the reseting controling signal sequential that RST provides for reseting controling signal providing end A, the transmission of control signals sequential that TX provides for transmission of control signals providing end B, the first predetermined level signal sequence that Vsc provides for the first predetermined level providing end C, SHR/SHS is reset signal sampling time sequence/photoelectron signal sampling time sequence, Signal is output end vo ut such as the first output end vo ut1, second output end vo ut2, the output voltage signal of the 3rd output end vo ut3.As shown in Figure 8, when carrying out reset signal sampling, in reset signal sampling time sequence SHR duration high level pulse Vsc1 in the first predetermined level signal sequence Vsc of reset signal sampling pulse SHR1 duration in, therefore, the pixel cell 1 of imageing sensor completes the sampling of reset samples signal value Vshr within the duration of high level pulse Vsc1.
Further, as shown in Figure 9, when light is crossed strong, if there is solar spot phenomenon in the sampling process of reset samples signal value Vshr, then the first floating diffusion node FD1, second floating diffusion node FD2, the voltage of the 3rd floating diffusion node FD3 can decline rapidly after the reset, but due to clamper module 40 such as the 3rd nmos pass transistor Q3, PMOS transistor Q, the existence of diode D4, when the voltage VSC of high level pulse Vsc1 subtracts floating diffusion node such as the first floating diffusion node FD1, second floating diffusion node FD2, when the difference of the voltage of the 3rd floating diffusion node FD3 is more than or equal to predeterminated voltage V1, clamper module 40 is the 3rd nmos pass transistor Q3 such as, PMOS transistor Q, diode D4 conducting, makes floating diffusion node FD such as the first floating diffusion node FD1, second floating diffusion node FD2, the voltage clamping of the 3rd floating diffusion node FD3 at VSC-V1, thus makes on reset samples signal value Vshr clamper to certain voltage, such as, on 1.7V.In addition, as shown in Figure 9, when carrying out photoelectron signal sampling, the first predetermined level signal sequence Vsc is low level, does not affect photoelectron sampled signal values Vshs, and reset samples signal value Vshr normally exports.Therefore, the pixel cell 1 of the imageing sensor of the utility model embodiment can eliminate the solar spot phenomenon that current pixel unit causes because Vshr-Vshs and picture signal Δ V reduces, and clamper module 40 is positioned at current pixel unit inside, producing circuit without the need to adding fixed level, substantially reducing the noise of signal chains.
Further, as shown in Fig. 5, Fig. 6 and Fig. 7, in an embodiment of the present utility model, output module 50 can comprise: submodule 501 and row strobe sub-module 502 are followed in source.Wherein, the control end that submodule 501 is followed in source is connected with the first end of clamper module 40 with the second end of reseting module 10, the second end of transport module 30 respectively, and the first end that submodule 501 is followed in source is connected with power supply providing end.The second end that submodule is followed in first end and the source of row strobe sub-module 502 is connected, and the second end of row strobe sub-module 502 is connected with the row reading circuit 2 of imageing sensor.Particularly, as shown in Fig. 5, Fig. 6 and Fig. 7, in an embodiment of the present utility model, submodule 501 is followed in source and row strobe sub-module 502 can be nmos pass transistor.
The pixel cell of the imageing sensor that the utility model proposes, clamper is carried out with the automatic voltage to floating diffusion node by increasing clamper module, thus prevent current pixel unit from occurring solar spot phenomenon, and clamper module is positioned at current pixel unit inside, producing circuit without the need to adding fixed level, substantially reducing the noise of signal chains.
The imageing sensor proposed according to the utility model embodiment is described with reference to the accompanying drawings.
As shown in Figure 10, the imageing sensor that the utility model proposes on the other hand comprises column decode circuitry 2, sample circuit 3, array decoding circuit 4, analog signal processing circuit 5 such as ASP (Analog Signal Processor, analogue signal processor), analog to digital conversion circuit 6 and pixel unit array 7 such as APS (Active Pixel Sensor, CMOS active pixel sensor) pixel unit array, wherein, pixel unit array 7 comprises the pixel cell 1 of multiple above-mentioned imageing sensor.
The imageing sensor that the utility model proposes carries out clamper by increasing clamper module in the pixel cell of imageing sensor with the automatic voltage to floating diffusion node, thus prevent current pixel unit from occurring solar spot phenomenon, and clamper module is positioned at current pixel unit inside, producing circuit without the need to adding fixed level, substantially reducing the noise of signal chains.
Describe and can be understood in flow chart or in this any process otherwise described or method, represent and comprise one or more for realizing the module of the code of the executable instruction of the step of specific logical function or process, fragment or part, and the scope of preferred implementation of the present utility model comprises other realization, wherein can not according to order that is shown or that discuss, comprise according to involved function by the mode while of basic or by contrary order, carry out n-back test, this should understand by embodiment person of ordinary skill in the field of the present utility model.
In flow charts represent or in this logic otherwise described and/or step, such as, the sequencing list of the executable instruction for realizing logic function can be considered to, may be embodied in any computer-readable medium, for instruction execution system, device or equipment (as computer based system, comprise the system of processor or other can from instruction execution system, device or equipment instruction fetch and perform the system of instruction) use, or to use in conjunction with these instruction execution systems, device or equipment.With regard to this specification, " computer-readable medium " can be anyly can to comprise, store, communicate, propagate or transmission procedure for instruction execution system, device or equipment or the device that uses in conjunction with these instruction execution systems, device or equipment.The example more specifically (non-exhaustive list) of computer-readable medium comprises following: the electrical connection section (electronic installation) with one or more wiring, portable computer diskette box (magnetic device), random access memory (RAM), read-only memory (ROM), erasablely edit read-only memory (EPROM or flash memory), fiber device, and portable optic disk read-only memory (CDROM).In addition, computer-readable medium can be even paper or other suitable media that can print described program thereon, because can such as by carrying out optical scanner to paper or other media, then carry out editing, decipher or carry out process with other suitable methods if desired and electronically obtain described program, be then stored in computer storage.
Should be appreciated that each several part of the present utility model can realize with hardware, software, firmware or their combination.In the above-described embodiment, multiple step or method can with to store in memory and the software performed by suitable instruction execution system or firmware realize.Such as, if realized with hardware, the same in another embodiment, can realize by any one in following technology well known in the art or their combination: the discrete logic with the logic gates for realizing logic function to data-signal, there is the application-specific integrated circuit (ASIC) of suitable combinational logic gate circuit, programmable gate array (PGA), field programmable gate array (FPGA) etc.
Those skilled in the art are appreciated that realizing all or part of step that above-described embodiment method carries is that the hardware that can carry out instruction relevant by program completes, described program can be stored in a kind of computer-readable recording medium, this program perform time, step comprising embodiment of the method one or a combination set of.
In addition, each functional unit in each embodiment of the utility model can be integrated in a processing module, also can be that the independent physics of unit exists, also can be integrated in a module by two or more unit.Above-mentioned integrated module both can adopt the form of hardware to realize, and the form of software function module also can be adopted to realize.If described integrated module using the form of software function module realize and as independently production marketing or use time, also can be stored in a computer read/write memory medium.
The above-mentioned storage medium mentioned can be read-only memory, disk or CD etc.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present utility model or example.In this manual, identical embodiment or example are not necessarily referred to the schematic representation of above-mentioned term.And the specific features of description, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
Although illustrate and described embodiment of the present utility model, for the ordinary skill in the art, be appreciated that and can carry out multiple change, amendment, replacement and modification to these embodiments when not departing from principle of the present utility model and spirit, scope of the present utility model is by claims and equivalency thereof.
Claims (10)
1. a pixel cell for imageing sensor, is characterized in that, comprising:
Reseting module, the control end of described reseting module is connected with reseting controling signal providing end, and the first end of described reseting module is connected with the power supply providing end of imageing sensor;
Photoelectric conversion module, one end ground connection of described photoelectric conversion module;
Transport module, the control end of described transport module is connected with transmission of control signals providing end, and the first end of described transport module is connected with the other end of described photoelectric conversion module, and the second end of described transport module is connected with the second end of described reseting module;
Clamper module, the first end of described clamper module is connected with the second end of described transport module with the second end of described reseting module respectively, and the second end of described clamper module is connected with the first predetermined level providing end; And
Output module, the control end of described output module is connected with the first end of described clamper module with the second end of described reseting module, the second end of described transport module respectively, the first end of described output module is connected with described power supply providing end, and the output of described output module is connected with the row reading circuit of imageing sensor.
2. pixel cell as claimed in claim 1, is characterized in that, described clamper module is nmos pass transistor or PMOS transistor or diode.
3. pixel cell as claimed in claim 2, it is characterized in that, when described clamper module is nmos pass transistor, the first end of described nmos pass transistor is connected with the control end of described output module with the second end of described reseting module, the second end of described transport module respectively, and the second end of described nmos pass transistor is connected with described first predetermined level providing end with the control end of described nmos pass transistor respectively.
4. pixel cell as claimed in claim 2, it is characterized in that, when described clamper module is PMOS transistor, the first end of described PMOS transistor is connected with the control end of described output module with the second end of the control end of described PMOS transistor, described reseting module, the second end of described transport module respectively, and the second end of described PMOS transistor is connected with described first predetermined level providing end.
5. pixel cell as claimed in claim 2, it is characterized in that, when described clamper module is diode, the negative electrode of described diode is connected with the control end of described output module with the second end of the second end of described reseting module, described transport module, and the anode of described diode is connected with described first predetermined level providing end.
6. pixel cell as claimed in claim 1, it is characterized in that, described photoelectric conversion module is the plus earth of photodiode, described photodiode.
7. pixel cell as claimed in claim 1, it is characterized in that, described output module comprises:
Submodule is followed in source, and the control end that submodule is followed in described source is connected with the first end of described clamper module with the second end of described reseting module, the second end of described transport module respectively, and the first end that submodule is followed in described source is connected with described power supply providing end; And
Row strobe sub-module, the second end that submodule is followed in first end and the described source of described row strobe sub-module is connected, and the second end of described row strobe sub-module is connected with the row reading circuit of described imageing sensor.
8. pixel cell as claimed in claim 7, it is characterized in that, described reseting module, described transport module, described source follow submodule and described row strobe sub-module is nmos pass transistor.
9. the pixel cell according to any one of claim 1-8, is characterized in that, described imageing sensor is CMOS (Complementary Metal Oxide Semiconductor) cmos image sensor.
10. an imageing sensor, it is characterized in that, comprise column decode circuitry, sample circuit, array decoding circuit, analog signal processing circuit, analog to digital conversion circuit and pixel unit array, wherein, described pixel unit array comprises the pixel cell of multiple imageing sensor as claimed in any one of claims 1-9 wherein.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105913792A (en) * | 2016-06-30 | 2016-08-31 | 京东方科技集团股份有限公司 | Pixel circuit, semiconductor camera detection circuit and display device |
| CN114025110A (en) * | 2021-11-03 | 2022-02-08 | 成都微光集电科技有限公司 | Pixel unit array circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105913792A (en) * | 2016-06-30 | 2016-08-31 | 京东方科技集团股份有限公司 | Pixel circuit, semiconductor camera detection circuit and display device |
| WO2018000927A1 (en) * | 2016-06-30 | 2018-01-04 | 京东方科技集团股份有限公司 | Pixel circuit, semiconductor camera testing circuit, and display device |
| CN105913792B (en) * | 2016-06-30 | 2019-01-22 | 京东方科技集团股份有限公司 | A kind of pixel circuit, semiconductor camera detection circuit, display device |
| US10205900B2 (en) | 2016-06-30 | 2019-02-12 | Boe Technology Group Co., Ltd. | Pixel circuit, semiconductor camera detection circuit and display device |
| CN114025110A (en) * | 2021-11-03 | 2022-02-08 | 成都微光集电科技有限公司 | Pixel unit array circuit |
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