CN204043604U - A kind of single-chip off-axis magneto-resistor Z-X angular transducer and measuring instrument - Google Patents
A kind of single-chip off-axis magneto-resistor Z-X angular transducer and measuring instrument Download PDFInfo
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- CN204043604U CN204043604U CN201420470308.8U CN201420470308U CN204043604U CN 204043604 U CN204043604 U CN 204043604U CN 201420470308 U CN201420470308 U CN 201420470308U CN 204043604 U CN204043604 U CN 204043604U
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Abstract
The utility model discloses a kind of single-chip off-axis magneto-resistor Z-X angular transducer and measuring instrument, sensor comprises the substrate be positioned on X-Y plane, be positioned at least one X-axis on substrate and Z axis magnetic resistance sensor, X-axis and Z axis magnetic resistance sensor comprise magneto-resistor sensing unit and flux concentrator, magneto-resistor sensing unit is electrically connected the magneto-resistor bridge being connected into and comprising at least two brachium pontis, Z axis magnetic resistance sensor is push-pull bridge structure, its push arm lays respectively on the position equidistant with soft magnetism flux concentrator Y-axis center line with drawing bow, described X-axis magnetic resistance sensor is with reference to bridge architecture, its reference arm and responsive arm lay respectively at flux concentrator Y-axis center line and distance Y-axis center line is greater than on the position of half flux concentrator width, this single-chip off-axis Z-X angular transducer is positioned over permanent magnetism code-disc edge and forms angel measuring instrument, measurement of angle is realized by measurement X-axis and Z axis magnetic-field component, there is compact conformation, high sensitivity feature.
Description
Technical field
The utility model relates to magnetic sensor field, particularly a kind of single-chip off-axis magneto-resistor Z-X angular transducer and the off-axis magneto-resistor Z-X angel measuring instrument based on this sensor.
Background technology
The magneto-resistor angel measuring instrument that magneto-resistor angular transducer and permanent magnetism code-disc are formed can be applied to the field such as magnetic coder and rotational position sensor, under normal circumstances, for magnetic resistance sensor as TMR, GMR etc., what adopt is the magnetic resistance sensor chip of plane X-Y type, by calculating magnetic field angle the measurement of X, Y direction magnetic-field component, realize the measurement to the permanent magnetism code-disc anglec of rotation, but its mainly there are the following problems:
1) due to GMR, TMR magneto-resistor sensing unit has one-way planar magnetic-field-sensitive direction, so usually adopt the sensor section sensor of X sensitive direction section 90-degree rotation being obtained Y sensitive direction, connected by binding between two sections, and be encapsulated in same chip, this X-Y magneto-resistor angular transducer chip is due to relevant for the operation of cutting into slices when installation site between section and encapsulation, have impact on the measuring accuracy of sensor, but also there is the problem that between section, silk thread connects, technique is comparatively complicated;
2) for GMR, the linear X that TMR magnetic resistance sensor unit is formed, the bridge architecture of Y magnetic resistance sensor, when adopting push-pull type structure, usually one in the section formed by two brachium pontis realizes the opposite magnetic fields sensitive direction of push arm section and section of drawing bow relative to another inclined turnback, and needs to be installed on diverse location on chip, realizes the connection between section by binding, the measuring accuracy of sensor can be affected equally, add the complicacy of technique;
For X-Y angular transducer chip, its working position be positioned at be parallel to permanent magnetism code-disc surfaces of revolution regional location above, therefore permanent magnetism code-disc installing space is less than code-disc size, needs to increase code-disc size guarantee chip and has large installing space and field homogeneity district.
Summary of the invention
For above problem, propose a kind of single-chip Z-X magneto-resistor angular transducer herein, replace X-Y magneto-resistor angular transducer, manufacture while same section realizes Z axis magnetic resistance sensor and X-axis magnetic resistance sensor, for X-axis magnetic resistance sensor, the humidification of magnetic field concentration to magnetoresistance cells row when adopting flux concentrator to be positioned over position near magnetoresistance cells row, and employing flux concentrator is covered in the attenuation for the magnetic field shielding of magnetoresistance cells row when magnetoresistance cells arranges upper, realize the Design and manufacture with reference to electric bridge, thus realize highly sensitive X-axis magnetic resistance sensor, and avoid the push-pull type structure of two section simultaneously, for Z axis magnetic resistance sensor, when adopting flux concentrator to be covered in the magnetoresistance cells row departing from flux concentrator center, Z magnetic-field component is twisted into and there is the effect of X to magnetic field, Z magnetic-field component is transformed into the magnetic-field component along X and-X both direction, and measured by magnetic resistance sensor, constitute push-pull bridge sensor, in addition, this single-chip Z-X magneto-resistor angular transducer is positioned over the edge of permanent magnet code-disc, by realizing the measurement of the magnetic field rotating angle of permanent magnetism code-disc in Z-X plane to the measurement of X and Z magnetic-field component, above permanent magnetism code-disc X-Z plane, there is larger space flexibility relative to being positioned over by X-Y angular transducer, these all successfully solve the deficiency of above X-Y angular transducer.
A kind of single-chip off-axis magneto-resistor Z-X angular transducer that the utility model proposes, for detecting the magnetic field rotating angle in the plane vertical with substrate surface, comprising:
Be positioned at the substrate on X-Y plane;
Be positioned at least one the X-axis magnetic resistance sensor on described substrate, for detecting the X-axis magnetic-field component being parallel to described substrate surface;
Be positioned at least one the Z axis magnetic resistance sensor on described substrate, for detecting the Z axis magnetic-field component perpendicular to described substrate surface;
Described X-axis magnetic resistance sensor and described Z axis magnetic resistance sensor include magneto-resistor sensing unit and flux concentrator, described flux concentrator is strip, its longer axis parallel is in Y direction, and minor axis parallel is in X-direction, and the sensitive direction of described magneto-resistor sensing unit is parallel to X-direction;
The magneto-resistor sensing unit of described Z axis magnetic resistance sensor and the magneto-resistor sensing unit of X-axis magnetic resistance sensor are electrically connected the magneto-resistor bridge being connected into and comprising at least two brachium pontis all respectively, wherein, each brachium pontis is the two-port structure of one or more described magneto-resistor sensing unit electrical connection, and the magneto-resistor sensing unit in described brachium pontis is arranged in multiple magnetoresistance cells row along being parallel to Y direction;
The magneto-resistor bridge of described Z axis magnetic resistance sensor is push-pull type electric bridge, wherein, push arm and drawing bow lays respectively at the not homonymy of the Y-axis center line above or below the flux concentrator in described Z axis magnetic resistance sensor, and equal to the distance of each self-corresponding described Y-axis center line;
The magneto-resistor bridge of described X-axis magnetic resistance sensor is with reference to formula electric bridge, wherein, reference arm is arranged on the Y-axis position of center line above or below described X-axis magnetic resistance sensor flux concentrator, responsive arm be arranged in described X-axis magnetic resistance sensor flux concentrator above or below Y-axis distance between center line be greater than on the position of a half width of flux concentrator.
Preferably, described flux concentrator is the magnetically soft alloy material comprising a kind of element in Ni, Fe, Co or multiple element.
Preferably, described magneto-resistor sensing unit is GMR or TMR magneto-resistor sensing unit.
Preferably, described Z axis magnetic resistance sensor comprises two Z axis magnetic resistance sensor subelements, and be positioned at the both sides of described X-axis magnetic resistance sensor respectively along described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
Preferably, described X-axis magnetic resistance sensor comprises two X-axis magnetic resistance sensor subelements, and be positioned at the both sides of described Z axis magnetic resistance sensor respectively along described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
Preferably, described X-axis, Z axis magnetic resistance sensor comprise multiple X-axis magnetic resistance sensor subelement, Z axis magnetic resistance sensor subelement respectively, and along the alternately arrangement of described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
Preferably, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor arrange along described Y direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
Preferably, the magneto-resistor sensing unit of described Z axis magnetic resistance sensor and the magneto-resistor sensing unit of X-axis magnetic resistance sensor are along described X-direction mixing arrangement, and described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor have common described flux concentrator.
Preferably, described Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise 1 described flux concentrator, and described magneto-resistor sensing unit corresponds to described 1 described flux concentrator.
Preferably, described Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise 2 described flux concentrators, the position of described push arm and the Y-axis center line not homonymy laying respectively at described 2 flux concentrators of drawing bow.
Preferably, described Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise N+2 described flux concentrator, and described magneto-resistor sensing unit corresponds to middle N number of described flux concentrator, and described N is positive integer.
Preferably, described X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise 2N magnetoresistance cells row, and the spacing in described X-axis magnetic resistance sensor between adjacent two described flux concentrators is L; When the flux concentrator quantity of described X-axis magnetic resistance sensor is 2N-2, two in the middle of described X-axis magnetic resistance sensor described magnetoresistance cells arrange adjacent and correspond to reference arm, and spacing is 2L; When the flux concentrator quantity of described X-axis magnetic resistance sensor is 2N-1, the described magnetoresistance cells row of two of described X-axis magnetic resistance sensor middle correspond to responsive arm, and spacing is 2L, and wherein L is natural number, described N be greater than 1 integer.
Preferably, it is positive integer that described X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise 2N(N) individual magnetoresistance cells row and 2N-1 described flux concentrator, and the magnetoresistance cells of described X-axis magnetic resistance sensor row are alternately distributed above or below the flux concentrator of described X-axis magnetic resistance sensor and are greater than the position of flux concentrator one half width of described X-axis magnetic resistance sensor apart from Y-axis center line, described N is positive integer.
Preferably, when described flux concentrator quantity is 2N+2, described Z axis magnetic resistance sensor comprises 4N magnetoresistance cells row, and correspond to middle 2N described flux concentrator, described X-axis magnetic resistance sensor comprises 2N+2 magnetoresistance cells row, and the distance between two magnetoresistance cells row of described X-axis magnetic resistance sensor centre is 4L, and the distance between adjacent two described flux concentrators is L, wherein L is natural number, described N be greater than 1 integer.
Preferably, described common flux concentrator quantity is 2N+2, described Z axis magnetic resistance sensor comprises 4N magnetoresistance cells row, correspond respectively to middle 2N described flux concentrator, the magnetoresistance cells number of columns that described X-axis magnetic resistance sensor comprises is 4N, and the distance between two magnetoresistance cells row of described X-axis magnetic resistance sensor centre is 2L, and the distance between adjacent two described flux concentrators is L, wherein L is natural number, described N be greater than 1 integer.
Preferably, described flux concentrator quantity is N, the magnetoresistance cells number of columns that described Z axis magnetic resistance sensor comprises is 2 (N-2), N-2 described flux concentrator in the middle of corresponding, the magnetoresistance cells number of columns that described X-axis magnetic resistance sensor comprises is 2 (N-1), and the Y-axis center line of a wherein described flux concentrator of side is distributed with magnetoresistance cells row, described N be greater than 3 integer.
Preferably, the reference arm in described X-axis magnetic resistance sensor is identical with the quantity of the magnetoresistance cells row corresponding to responsive arm, and the push arm in described Z axis magnetic resistance sensor is identical with the quantity of the magnetoresistance cells row of drawing bow corresponding.
Preferably, described Z axis magnetic resistance sensor is identical with the described flux concentrator width corresponding to X-axis magnetic resistance sensor, and thickness is also identical.
Preferably, the field gain coefficient at the magnetoresistance cells row position place of the gap location between the flux concentrator of described X-axis magnetic resistance sensor is 1<Asns<100, and above or below the flux concentrator of described X-axis magnetic resistance sensor, the field decay coefficient of the magnetoresistance cells row position of Y-axis centerline is 0<Aref<1.
Preferably, the spacing L in described Z axis magnetic resistance sensor between adjacent two described flux concentrators is not less than the width Lx of the flux concentrator of described Z axis magnetic resistance sensor.
Preferably, the spacing L>2Lx in described Z axis magnetic resistance sensor between adjacent two described flux concentrators, described Lx are the width of flux concentrator described in described Z axis magnetic resistance sensor.
Preferably, for described Z axis magnetic resistance sensor, above or below described magnetoresistance cells row on it and described magnetic flux concentrator, the spacing at edge is less, or the thickness Lz of the described magnetic flux concentrator on it is larger, or the width Lx of the described magnetic flux concentrator on it is less, the sensitivity of described Z axis magnetic resistance sensor is higher.
Preferably, the reference formula electric bridge of described X-axis magnetic resistance sensor and/or the push-pull type electric bridge of described Z axis magnetic resistance sensor are the one in half-bridge, full-bridge or accurate bridge construction.
Preferably, the magneto-resistor sensing unit of described X-axis magnetic resistance sensor and Z axis magnetic resistance sensor all has identical magnetic field sensitivity.
The utility model additionally provides a kind of off-axis magneto-resistor Z-X angel measuring instrument on the other hand, comprise above-mentioned single-chip off-axis magneto-resistor Z-X angular transducer, described off-axis magneto-resistor Z-X angel measuring instrument also comprises Circular permanent magnet code-disc, the direction of magnetization of described Circular permanent magnet code-disc is parallel to the Plane of rotation and the straight line in the center of circle of the described Circular permanent magnet code-disc of mistake that are positioned at described Circular permanent magnet code-disc, the Width of described Circular permanent magnet code-disc and turning axle direction are all along Y direction, Plane of rotation is X-Z plane, the X-Y plane at described substrate place is Det apart from the distance at described Circular permanent magnet code-disc edge, and Z axis crosses the described center of single-chip off-axis Z-X magneto-resistor angular transducer and the axle center of described Circular permanent magnet code-disc, described Det>0.
Preferably, Z axis magnetic resistance sensor comprises two Z axis magnetic resistance sensor subelements, and the both sides of described X-axis magnetic resistance sensor are positioned at respectively along X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with X-axis magnetic resistance sensor, described Det is 0.2-0.3 r, and interval (Space) between X-axis magnetic resistance sensor and Z axis magnetic resistance sensor subelement for 0-0.3 r, r be the radius of described Circular permanent magnet code-disc.
Preferably, X-axis magnetic resistance sensor comprises two X-axis magnetic resistance sensor subelements, and the both sides of described Z axis magnetic resistance sensor are positioned at respectively along X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with X-axis magnetic resistance sensor, described Det is 0.6-0.8 r, and interval (Space) between described X-axis magnetic resistance sensor subelement and Z axis magnetic resistance sensor for 0.5-0.7 r, r be the radius of described Circular permanent magnet code-disc.
Preferably, X-axis magnetic resistance sensor, Z axis magnetic resistance sensor comprise multiple X-axis magnetic resistance sensor subelement, Z axis magnetic resistance sensor subelement respectively, and along the alternately arrangement of described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with X-axis magnetic resistance sensor, described Det is 0.5-0.7 r, and the interval (Space) between adjacent Z axis magnetic resistance sensor subelement and X-axis magnetic resistance sensor subelement is 0.6 r, r is described Circular permanent magnet code-disc radius.
Preferably, Z axis magnetic resistance sensor and X-axis magnetic resistance sensor arrange along described Y direction, the described flux concentrator that described Z axis magnetic resistance sensor and X-axis magnetic resistance sensor are corresponding different respectively, the radius of described Det to be 0.5-0.7 r, r be described Circular permanent magnet code-disc.
Preferably, the magneto-resistor sensing unit of Z axis magnetic resistance sensor and the magneto-resistor sensing unit of X-axis magnetic resistance sensor are along X-direction mixing arrangement, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor have common described flux concentrator, the radius of described Det to be 0.5-0.7 r, r be described Circular permanent magnet code-disc.
Preferably, Z axis magnetic resistance sensor and X-axis magnetic resistance sensor arrange along described Y direction, described Z axis magnetic resistance sensor and X-axis magnetic resistance sensor do not have common described flux concentrator, and described single-chip off-axis magneto-resistor Z-X angular transducer is positioned at X-axis and the Z axis field homogeneity district of described Circular permanent magnet code-disc along the Width of described Circular permanent magnet code-disc.
Accompanying drawing explanation
Fig. 1 single-chip Z-X magneto-resistor angle sensor structure one.
Fig. 2 single-chip Z-X magneto-resistor angle sensor structure two.
Fig. 3 single-chip Z-X magneto-resistor angle sensor structure three.
Fig. 4 single-chip Z-X magneto-resistor angle sensor structure four.
Fig. 5 single-chip Z-X magneto-resistor angle sensor structure five.
Fig. 6 X-axis magnetic resistance sensor structure one.
Fig. 7 X-axis magnetic resistance sensor structure two.
Fig. 8 X-axis magnetic resistance sensor structure three.
Fig. 9 Z axis magnetic resistance sensor structure one.
Figure 10 Z axis magnetic resistance sensor structure two.
Figure 11 Z axis magnetic resistance sensor structure three.
Figure 12 X-axis-Z axis magnetic resistance sensor mixed structure one.
Figure 13 X-axis-Z axis magnetic resistance sensor mixed structure two.
Figure 14 X-axis-Z axis magnetic resistance sensor mixed structure three.
The X-direction magnetic-field measurement schematic diagram of Figure 15 X-axis magnetic resistance sensor.
The magnetic resistance sensor position of Figure 16 X-axis magnetic resistance sensor in the external magnetic field of X-direction is along the Distribution of Magnetic Field figure of X-direction.
The Z-direction magnetic-field measurement schematic diagram of Figure 17 Z axis magnetic resistance sensor.
The magnetic resistance sensor position of Figure 18 Z axis magnetic resistance sensor in the external magnetic field of Z-direction is along the Distribution of Magnetic Field figure of X-direction.
Figure 19 single-chip Z-X magneto-resistor angle sensor structure one typical topology figure.
Figure 20 single-chip Z-X magneto-resistor angle sensor structure two typical topology figure.
Figure 21 single-chip Z-X magneto-resistor angle sensor structure three typical topology figure.
The electrical connection graph of the Z axis magnetic resistance sensor of Figure 22 full bridge structure.
The sketch of the Z axis magnetic resistance sensor of Figure 23 full bridge structure.
The electrical connection graph of the X-axis magnetic resistance sensor of Figure 24 full bridge structure.
The sketch of the X-axis magnetic resistance sensor of Figure 25 full bridge structure.
X-axis-Z axis mixed structure sensor electrical the connection layout one of Figure 26 full bridge structure.
X-axis-Z axis mixed structure sensor electrical the connection layout two of Figure 27 full bridge structure.
X-axis-Z axis mixed structure sensor electrical the connection layout three of Figure 28 full bridge structure.
The measurement of angle schematic diagram of Figure 29 single-chip X-Z magneto-resistor angular transducer+Circular permanent magnet code-disc.
Average magnetic field measured angular and permanent magnetism code-disc rotation angle typical relation figure in Figure 30 single-chip Z-X magnetic resistance sensor structure one.
The typical relation figure of average magnetic field measured angular and permanent magnetism code-disc rotation angle in Figure 31 single-chip Z-X magnetic resistance sensor structure two.
The typical relation figure of average magnetic field measured angular and permanent magnetism code-disc rotation angle in Figure 32 single-chip Z-X magnetic resistance sensor structure three.
The magnetic-field measurement signal graph of Z axis and X-axis magnetic resistance sensor in Figure 33 single-chip Z-X magnetic resistance sensor structure one.
The magnetic-field measurement signal graph of Z axis and X-axis magnetic resistance sensor in Figure 34 single-chip Z-X magnetic resistance sensor structure two.
The magnetic-field measurement signal graph of Z axis and X-axis magnetic resistance sensor in Figure 35 single-chip Z-X magnetic resistance sensor structure three.
Average magnetic field measured angular and permanent magnetism code-disc rotation angle linear fit curve R in Figure 36 single-chip Z-X magnetic resistance sensor structure one
2with chip from code-disc Edge Distance graph of a relation.
Average magnetic field measured angular and permanent magnetism code-disc rotation angle linear fit curve R in Figure 37 single-chip Z-X magnetic resistance sensor structure two
2with chip from code-disc Edge Distance graph of a relation.
Average magnetic field measured angular and permanent magnetism code-disc rotation angle linear fit curve R in Figure 38 single-chip Z-X magnetic resistance sensor structure three-five
2with chip from code-disc Edge Distance graph of a relation.
Average magnetic field measured angular and permanent magnetism code-disc rotation angle linear fit curve R in Figure 39 single-chip Z-X magnetic resistance sensor structure one
2with chip and X-axis and Z axis magnetic resistance sensor span graph of a relation.
Figure 40 single-chip Z-X magnetic resistance sensor structure two average magnetic field measured angular and permanent magnetism code-disc rotation angle linear fit curve R
2with chip and X-axis and Z axis magnetic resistance sensor span graph of a relation.
Figure 41 single-chip Z-X magnetic resistance sensor structure three-five average magnetic field measured angular and permanent magnetism code-disc rotation angle linear fit curve R
2with chip and X and Z axis magnetic resistance sensor span graph of a relation.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the utility model in detail.
Embodiment one
Fig. 1 is structure one figure of single-chip magneto-resistor Z-X angular transducer, comprise Si substrate 1, and the X-axis magnetic resistance sensor 3 be positioned on Si substrate 1 and Z axis magnetic resistance sensor 2, wherein X-axis magnetic resistance sensor 3 comprises two X-axis magnetic resistance sensor subelements 31 and 32, and is arranged in the both sides of Z axis magnetic resistance sensor 2 along X-direction.
Fig. 2 is structure two figure of single-chip magneto-resistor Z-X angular transducer, comprise Si substrate 1, and the X-axis magnetic resistance sensor 3 (1) be positioned on Si substrate 1 and Z axis magnetic resistance sensor 2 (1), wherein Z axis magnetic resistance sensor 2 (1) comprises two Z axis magnetic resistance sensor subelements 21 and 22, and is arranged in the both sides of X-axis magnetic resistance sensor 3 (1) along X-direction.
Fig. 3 is structure three figure of single-chip magneto-resistor Z-X angular transducer, comprise Si substrate 1, and the X-axis magnetic resistance sensor 3 (2) be positioned on Si substrate 1 and Z axis magnetic resistance sensor 2 (2), wherein Z axis magnetic resistance sensor 2 (2) comprises multiple Z axis magnetic resistance sensor subelement 23,24 and 25, X-axis magnetic resistance sensor 3(2) comprise multiple X-axis magnetic resistance sensor subelement 33,34 and 35, and X-axis magnetic resistance sensor subelement and Z axis magnetic resistance sensor subelement are alternately arranged along X-direction.
Fig. 4 is structure four figure of single-chip magneto-resistor Z-X angular transducer, comprise Si substrate 1, and the X-axis magnetic resistance sensor 3 (A) be positioned on Si substrate 1 and Z axis magnetic resistance sensor 2 (A), wherein Z axis magnetic resistance sensor 2 (A) and X-axis magnetic resistance sensor 3 (A) are arranged along Y direction.
Fig. 5 is structure five figure of single-chip magneto-resistor Z-X angular transducer, comprise Si substrate 1, and the X-axis magnetic resistance sensor 3 (B) be positioned on Si substrate 1 and Z axis magnetic resistance sensor 2 (B), different with the arrangement of Fig. 1-4, X-axis magnetic resistance sensor and Z axis magnetic resistance sensor have mixed structure, are arranged within the scope of the same space.
Embodiment two
Fig. 6 is that the structure one of corresponding single-chip magneto-resistor Z-X angular transducer is to the X-axis magnetic resistance sensor of structure four and structure one Fig. 2 (3) of subelement thereof, comprise flux concentrator 4 and magnetoresistance cells row 5, wherein magnetoresistance cells row 5 comprise the reference magnetoresistance cells row 52 on the Y position of center line that is positioned at above or below flux concentrator 41 and are positioned at the responsive magnetoresistance cells row 51 that distance flux concentrator 41 distance is greater than the half width position of flux concentrator, in the X-axis magnetic resistance sensor structure one shown in Fig. 6, spacing between adjacent two flux concentrators is L, X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise the integer of 2N(N>1) individual magnetoresistance cells row, flux concentrator quantity is even number 2N-2, two magnetoresistance cells row in the middle of X-axis magnetic resistance sensor are adjacent, correspond to reference to magnetoresistance cells row, and spacing is 2L.
Fig. 7 is that the structure one of corresponding single-chip magneto-resistor Z-X angular transducer is to the X-axis magnetic resistance sensor of structure four and structure two Fig. 2 (4) of subelement thereof, comprise flux concentrator 4 (1) and magnetoresistance cells row 5 (1), wherein magnetoresistance cells row 5(1) comprise the reference magnetoresistance cells row 54 on the Y position of center line that is positioned at above or below flux concentrator 44 and be positioned at the responsive magnetoresistance cells row 53 that distance flux concentrator 44 distance is greater than flux concentrator half width position, in the X-axis magnetic resistance sensor structure two shown in Fig. 7, adjacent two flux concentrator spacing are L, X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise the integer of 2N(N>1) individual magnetoresistance cells row, flux concentrator quantity is odd number 2N-1, two magnetoresistance cells row of X-axis magnetic resistance sensor middle correspond to responsive magnetoresistance cells row, and spacing is 2L, wherein L is natural number.
Fig. 8 is that the structure one of corresponding single-chip magneto-resistor Z-X angular transducer is to the X-axis magnetic resistance sensor of structure four and structure three Fig. 2 (5) of subelement thereof, comprise flux concentrator 4(5) and magnetoresistance cells row 5(5), wherein magnetoresistance cells row 5(5) comprise be positioned at flux concentrator 4(5) reference magnetoresistance cells row 58 on Y position of center line on upper surface or lower surface and be positioned at distance flux concentrator 4(5) Y position of center line distance be greater than the responsive magnetoresistance cells row 57 of flux concentrator half width position, X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise the integer of 2N(N>0) individual magnetoresistance cells row and 2N-1 flux concentrator, and magnetoresistance cells arranges the Y-axis center line be alternately distributed above or below flux concentrator and the position being greater than flux concentrator one half width apart from Y-axis center line, therefore, a this structure X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement flux concentrator in two side positions is not with reference to magnetoresistance cells row.
Embodiment three
Fig. 9 is that the structure one of corresponding single-chip magneto-resistor Z-X angular transducer is to the Z axis magnetic resistance sensor of structure four and structure one Fig. 3 (3) of Z axis magnetic resistance sensor subelement thereof, comprise flux concentrator 6 and magnetoresistance cells row 7, wherein magnetoresistance cells row 7 comprise the push arm magnetoresistance cells be positioned on Y center line both sides and equidistant two positions of Y center line be positioned on flux concentrator 6 upper surface or lower surface and to arrange and draw bow magnetoresistance cells row 71 and 72, Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise the integer of N+2(N>0) individual flux concentrator, and magnetoresistance cells row correspond to middle N number of flux concentrator.
Figure 10 is that the structure one of corresponding single-chip magneto-resistor Z-X angular transducer is to the Z axis magnetic resistance sensor of structure four and structure two Fig. 3 (4) of Z axis magnetic resistance sensor subelement thereof, comprise 1 flux concentrator 719, magnetoresistance cells row 619 and 620 correspond to flux concentrator 719.
Figure 11 is that the structure one of corresponding single-chip magneto-resistor Z-X angular transducer is to the Z axis magnetic resistance sensor of structure four and structure three Fig. 3 (5) of Z axis magnetic resistance sensor subelement thereof, comprise 2 flux concentrators 720, two magnetoresistance cells row 621 correspond to 2 flux concentrators 720 and are positioned at the equidistant not same lateral position of Y-axis center line, such as both can lay respectively at left side and the right side of the Y-axis center line of 2 flux concentrators, also can lay respectively at right side and the left side of the Y-axis center line of 2 flux concentrators.
Embodiment four
Figure 12 is Z axis magnetic resistance sensor and X-axis magnetic resistance sensor mixed structure one Fig. 2-3(1 of the structure five of corresponding single-chip magneto-resistor Z-X angular transducer), wherein, X-axis magnetic resistance sensor and Z axis magnetic resistance sensor have common flux concentrator 4-6(3), 4-6(1) with 4-6 (2), and correspond to the magneto-resistor sensing unit 5-7(3 of X-axis magnetic resistance sensor) and 5-7(4) and correspond to the magneto-resistor sensing unit 5-7(1 of Z axis magnetic resistance sensor) and 5-7(2) mixing arrangement, corresponding described flux concentrator quantity be 2*N+2 (N be greater than 1 integer), Z axis magnetic resistance sensor comprises 4*N magnetoresistance cells row, and correspond to a middle 2N flux concentrator, X-axis magnetic resistance sensor comprises 2*N+2 magnetoresistance cells row, and the distance between two of centre magnetoresistance cells row is 4*L, distance between adjacent two flux concentrators is L.
Figure 13 is Z axis magnetic resistance sensor and X-axis magnetic resistance sensor mixed structure two Fig. 2-3(2 of the structure five of corresponding single-chip magneto-resistor Z-X angular transducer), wherein, X-axis magnetic resistance sensor and Z axis magnetic resistance sensor have common flux concentrator 4-6(11), 4-6(12) with 4-6 (13), and correspond to the magneto-resistor sensing unit 5-7(13 of X-axis magnetic resistance sensor) and 5-7(14) and correspond to the magneto-resistor sensing unit 5-7(11 of Z axis magnetic resistance sensor) and 5-7(12) mixing arrangement, flux concentrator quantity to be 2*N+2(N be greater than 1 integer), Z axis magnetic resistance sensor comprises 4*N magnetoresistance cells row, correspond respectively to a middle 2N flux concentrator, it is 4*N that X-axis magnetic resistance sensor comprises magnetoresistance cells number of columns, and the spacing of two of centre magnetoresistance cells row is 2*L, distance between adjacent two flux concentrators is L.
Figure 14 is Z axis magnetic resistance sensor and X-axis magnetic resistance sensor mixed structure three Fig. 2-3(3 of the structure five of corresponding single-chip magneto-resistor Z-X angular transducer), wherein, X-axis magnetic resistance sensor and Z axis magnetic resistance sensor have common flux concentrator 4-6(21), 4-6(22) with 4-6 (23), and correspond to the magneto-resistor sensing unit 5-7(23 of X-axis magnetic resistance sensor) and 5-7(24) and correspond to the magneto-resistor sensing unit 5-7(21 of Z axis magnetic resistance sensor) and 5-7(22) mixing arrangement, flux concentrator quantity to be N(N be greater than 3 integer), it is 2* (N-2) that Z axis magnetic resistance sensor comprises magnetoresistance cells number of columns, N-2 flux concentrator in the middle of corresponding, it is 2* (N-1) that X-axis magnetic resistance sensor comprises magnetoresistance cells number of columns, and the corresponding magnetoresistance cells row of the Y-axis center line of two of both sides flux concentrators flux concentrator wherein.
Embodiment five
Figure 15 is the measuring principle figure of X-axis magnetic resistance sensor in X-direction magnetic field, can find out, X-direction magnetic field is through flux concentrator 4(2) after, Distribution of Magnetic Field changes, the density of line of magnetic force being wherein positioned at corresponding magneto-resistor reference unit row 56 place, center, place above or below in the of 45 is sparse, show that its intensity reduces, and the density of line of magnetic force at magneto-resistor sensing unit row 55 place between adjacent two flux concentrators strengthens, display magnetic field intensity increases.
The X-axis magnetic resistance sensor position of Figure 16 corresponding to Figure 15 is along the distribution plan of the X-direction magnetic field intensity on X-direction straight line, can find out, 7 flux concentrator m1-m7 in corresponding Figure 15, be positioned at flux concentrator upper surface or position, lower surface center has minimum magnetic field intensity, between adjacent two X-flux concentrators, position then has very big magnetic field intensity, and the minimal value magnetic field of 7 X flux concentrator upper surfaces or lower surface center has same magnitude, therefore, this means, magneto-resistor reference unit row can correspond to two flux concentrators of both sides, corresponding to the magneto-resistor sensing unit at 7 X flux concentrator adjacent segment places magnetic field amplitude closely, therefore, magneto-resistor sensing unit row can be placed in these positions, but the X magnetic field intensity of the position of obvious two sides is significantly less than the magnetic field intensity in centre position, therefore reference unit row can not be placed outside the X flux concentrator of m1 and m7, both sides.
Figure 17 is the measuring principle figure of Z axis magnetic resistance sensor in Z-direction magnetic field, can find out, Z-direction magnetic field is through flux concentrator 6(1) after, magnetic direction in its vicinity changes, flux concentrator lower surface is positioned at the magnetoresistance cells row 7(1 of center line both sides) corresponding to push arm 73 magneto-resistor sensing unit capable with to draw bow the 74 capable places of magneto-resistor sensing unit, magnetic direction is distorted, and has occurred the magnetic-field component of X-direction.
The Z axis flux concentrator 6(1 of Figure 18 corresponding to Figure 17) upper surface or lower surface position place Z magneto-resistor sensing unit line position place along the Distribution of Magnetic Field figure of X-direction.Can find out, the position of center line both sides of n1-n7 Z flux concentrator have contrary X-direction magnetic-field component, and the X-direction magnetic-field component size of the position of center line both sides corresponding to Z flux concentrator 63 of centre is identical, and be positioned at two Z flux concentrators 64 of both sides, the X-direction magnetic-field component direction of its center line both sides is contrary, but differ in size, obviously the magnetic field intensity inside the magnetic field intensity of outer fix is greater than, therefore, it is capable that two the Z flux concentrators being positioned at both sides can not place Z magneto-resistor sensing unit.
Consistent with the analysis of the Distribution of Magnetic Field of Z axis magnetic resistance sensor and the design of sensor for X-axis magnetic resistance sensor above.
Embodiment six
Figure 19-21 is the typical topology figure of three kinds of structures of single-chip off-axis magneto-resistor Z-X angular transducer, wherein Figure 19 is structure one single-chip Z-X magneto-resistor angular transducer topological diagram, Z axis magnetic resistance sensor 2(7) structure corresponding to Fig. 9, also can be structure shown in Figure 10 or Figure 11, and be positioned at the structure of two X-axis magnetic resistance sensor subelements 3 (7) corresponding to Fig. 6 of both sides, also can correspond to structure shown in Fig. 7 or Fig. 8.The single-chip off-axis magneto-resistor Z-X angular transducer of structure two type corresponding to Figure 20, comprise the Z axis magnetic resistance sensor subelement 2 (8) of structure shown in two Fig. 9 or Figure 10 or Figure 11, and X-axis magnetic resistance sensor 3 (8) structure shown in Fig. 6 or Fig. 7 of centre or Fig. 8.The single-chip off-axis magneto-resistor Z-X angular transducer of structure three type is corresponded in Figure 21, comprise the alternate combinations of Z axis magnetic resistance sensor and X-axis magnetic resistance sensor, wherein Z axis magnetic resistance sensor subelement 2(9) be the structure one of Fig. 9-11 Suo Shi, X-axis magnetic resistance sensor subelement 3(9) can be any one in structure shown in Fig. 6-8.
Embodiment seven
The Z axis magnetic resistance sensor structural drawing of Figure 22 corresponding to single-chip off-axis magneto-resistor Z-X angular transducer, Figure 23 is the electric connection structure figure corresponding to Z axis magnetic resistance sensor, described magneto-resistor sensing unit is electrically connected the push-pull bridge structure being connected into and comprising at least two arms, each brachium pontis comprises the two-port structure that one or more magneto-resistor sensing units connect into, and magneto-resistor sensing unit is arranged in multiple magnetoresistance cells row, it is a kind of full-bridge push-pull type structure in this figure, wherein, comprise power input 82, ground input end 83, and two signal output parts 84 and 85, be positioned at the flux concentrator 717 of both sides and be positioned at middle flux concentrator 718, push arm and magnetoresistance cells row 617 and 618 of drawing bow lay respectively at the both sides of the below disalignment of medium throughput concentrator 718, and connected by electric connection line 81, the full bridge structure of its correspondence as shown in figure 18.
Figure 24 is a kind of electric connection structure figure corresponding to X-axis magnetic resistance sensor, described magneto-resistor sensing unit is electrically connected the reference electric bridge being connected into and comprising at least two arms, each brachium pontis comprises the two-port structure that one or more magneto-resistor sensing units connect into, and magneto-resistor sensing unit is arranged in multiple magnetoresistance cells row, this figure is with reference to full bridge structure, comprise power input 92 and ground 94, signal output part 93 and 95, the reference magnetoresistance cells row 517 being positioned at flux concentrator center and the X magneto-resistor sensing unit row 518 be positioned in the middle of adjacent two flux concentrators, and electric connecting conductor 91, the reference full bridge structure of its correspondence as shown in figure 25.
It is to be noted, more than for X-axis magnetic resistance sensor and Z axis magnetic resistance sensor do not have the situation of multiple subelement, for the situation that there is multiple subelement in structure one, structure two and structure three, need to adopt conductive unit to connect between different subelements, thus a final formation X-axis or Z axis magnetic resistance sensor structure.
It is to be noted, what more than provide is full bridge structure, in fact, and no matter X-axis magnetic resistance sensor or Z axis magnetic resistance sensor, can also be electrically connected to be connected into and comprise magneto-resistor reference unit row and magneto-resistor sensing unit row, and push arm and the half-bridge of drawing bow or accurate bridge construction.
Figure 26-28 is respectively the magneto-resistor sensing unit electrical connection graph of corresponding X-axis magnetic resistance sensor and Z axis magnetic resistance sensor mixed structure.In Figure 26, 92B and 94B corresponds respectively to the VDD-to-VSS end of X-axis magnetic resistance sensor and Z axis magnetic resistance sensor, because the X-axis magnetic resistance sensor in this structure and Z axis magnetic resistance sensor are all full bridge structure, two signal output parts of the corresponding Z axis magnetic resistance sensor of 84B and 85B difference, and 93B and 95B corresponds respectively to two signal output parts of X-axis magnetic resistance sensor, 81B is for connecting wire, 718B is the flux concentrator of edge, 718B is the flux concentrator in centre position, for X-axis magnetic resistance sensor, 517B and 518B corresponds respectively to reference magnetoresistance cells row and the responsive magnetoresistance cells row of X-axis magnetic resistance sensor, and for Z axis magnetic resistance sensor, 617B and 618B corresponds respectively to two magnetoresistance cells row of recommending arm.
In Figure 27, 92A and 94A corresponds respectively to the VDD-to-VSS input end of X-axis magnetic resistance sensor and Z axis magnetic resistance sensor, equally, because X-axis magnetic resistance sensor in this structure and Z axis magnetic resistance sensor are all full-bridge, 84A and 85A corresponds respectively to two signal output parts of Z axis magnetic resistance sensor, and 93A and 95A corresponds respectively to two signal output parts of X-axis magnetic resistance sensor, 717A is the flux concentrator of edge, 718A is the flux concentrator in centre position, for X-axis magnetic resistance sensor, 518A is responsive magnetoresistance cells row, 517A is with reference to magnetoresistance cells row, 617A and 618A for two recommend corresponding to arm magnetoresistance cells row.
In Figure 28, 92C and 94C is respectively the VDD-to-VSS input end of X-axis magnetic resistance sensor and Z axis magnetic resistance sensor, in this structure, Z axis magnetic resistance sensor is half-bridge, therefore an output signal end 84C is only had, X-axis magnetic resistance sensor is full-bridge, 93C and 95C is two signal output part, 81C is corresponding middle connection wire, 717C is the flux concentrator of edge, 718C is middle flux concentrator, 518C and 517C corresponds respectively to responsive magnetoresistance cells row and arranges with reference to magnetoresistance cells, the magnetoresistance cells row that 617C and 618C corresponds respectively to push arm and draw bow.
In Figure 26-28, can find out, in order to effectively be connected in the middle of X with the magnetoresistance cells row of Z axis magnetic resistance sensor, and avoid the situation occurring intersecting, wire and output terminal, arrange between input end, and wire walks around output terminal and input end.
Embodiment eight
Figure 29 is the situation that single-chip off-axis magneto-resistor Z-X sensor 101 is applied to measurement of angle, comprise a Circular permanent magnet code-disc 100, can rotate along central shaft, and direction of principal axis and Width are Y direction, its direction of magnetization M is unidirectional diametric(al) excessively, single-chip off-axis magneto-resistor Z-X sensor 101 is positioned at permanent magnetism code-disc frontside edge and is parallel on the measurement plane 1002 of permanent magnetism code-disc tangent plane 1001, its substrate is also positioned in XY plane simultaneously, its chip center and the code-disc line of centres are perpendicular to chip, and cross Z-direction, the distance of chip 101 centre distance permanent magnetism code-disc frontside edge is Det, X-direction is parallel to the rotational speed direction of permanent magnetism code-disc on section, Z axis is chip normal orientation, wherein, the angle of permanent magnetism code-disc 100 direction of magnetization and Z axis is defined as anglec of rotation θ, and permanent magnetism code-disc 100 is at the Z axis at single-chip off-axis magneto-resistor Z-X sensor 101 place, X-axis magnetic resistance sensor and the generation of subelement place thereof along Z-direction magnetic-field component and X-direction magnetic-field component as Fig. 1, shown in 2 and 3, suppose that magnetic field, each position i place is for (Hxi, Hzi), for chip 101, then form an average sensor magnetic field included angle, the φ of the single-chip off-axis magneto-resistor Z-X angular transducer of three kinds of structures is calculated as follows:
For structure one, as shown in Figure 1, its from left to right, the magnetic field of its each X-axis, Z axis magnetic resistance sensor and subelement position thereof is respectively 1:H1(Hx1, Hz1), 2:H2(Hx, Hz), 3:(Hx2, Hz2), then:
φ=atan((Hx1+Hx2)/Hz)， HZ>0
φ=atan((Hx1+Hx2)/Hz)-Pi，HZ<0; Hx1+Hx2<0
φ=atan((Hx1+Hx2)/Hz)+Pi，Hz<0; Hx1+Hx2>0
When sensitivity is determined, Z axis, X-axis magnetic resistance sensor output signal is only directly proportional to field signal, and now the field signal of Z axis, X-axis magnetic resistance sensor is respectively:
Z：Hz
X：Hx1+Hx2
For structure two, as shown in Figure 2, then:
φ=atan(Hx/(Hz1+Hz2))， Hz1+Hz2>0
φ=atan(Hx/(Hz1+Hz2)-Pi， Hz1+Hz2<0, Hx<0
φ=atan(Hx/(Hz1+Hz2)+Pi， Hz1+Hz2<0, Hx>0
Now, the field signal of Z axis, X-axis magnetic resistance sensor is respectively:
Z: Hz1+Hz2
X: Hx
For structure three ~ structure five, as in Figure 3-5, then:
φ=atan(∑Hxi/∑Hzi); ∑Hzi>0
φ=atan(∑Hxi/∑Hzi)-Pi; ∑Hzi<0, ∑Hxi<0
φ=atan(∑Hxi/∑Hzi)+Pi; ∑Hzi>0, ∑Hxi>0
Now, Z, the field signal of X-axis magnetic resistance sensor is:
Z: ∑Hzi
X: ∑Hxi
φ with the variation relation of θ with the spacing Det of single-chip off-axis magneto-resistor Z-X angular transducer 101 and permanent magnetism code-disc 100 and adjacent Z axis magnetic resistance sensor and subelement thereof, the spacing (Space) of X-axis magnetic resistance sensor and subelement thereof is correlated with, only have when φ is linear relationship with the variation relation of θ, Z-X magnetic resistance sensor chip 101 could be measured for the anglec of rotation of permanent magnetism code-disc 100, therefore, when needing to determine single-chip off-axis magneto-resistor Z-X angular transducer 101 with (Space) and Det change, and the interval scope of Det (Space), to make chip, there is best measurement of angle performance.
Graph of a relation between the magnetic field average angle φ of Figure 30-32 corresponding to single-chip off-axis magneto-resistor Z-X sensor 101 and permanent magnetism code-disc 100 anglec of rotation θ, wherein Circular permanent magnet code-disc 100 radius is r=8 mm, as Det=1 mm, can find out, the relation curve 102 of the single-chip off-axis magneto-resistor Z-X angular transducer of structure one type corresponding to Figure 30 has typical linear feature, the relation curve 103 of the single-chip off-axis magneto-resistor Z-X angular transducer of structure two type corresponding to Figure 31 then has nonlinear characteristic, its fluctuating range is obviously greater than the Z-X magneto-resistor angular transducer 104 angular relationship curve of structure three type corresponding to Figure 32.
The measurement magnetic field oblong permanent magnetism code-disc anglec of rotation typical relation curve map of Z, X magnetic resistance sensor of Figure 33-35 corresponding to three types single-chip off-axis magneto-resistor Z-X sensor chip 101, can find out, in three kinds of structures, it is all sine and cosine curve that Z axis, X-axis magnetic resistance sensor measure magnetic field-anglec of rotation curve 105,107,109 and 106,108,110, and phase differential is 90 degree between the two.
Figure 36-38 is respectively the linear fit characteristic parameter R of the magnetic field angle relation of three kinds of structure single-chip off-axis magneto-resistor Z-X angular transducers
2with the graph of a relation of Det/r ratio.Can find out, the R of the structure one corresponding to Figure 36
2curve 111 increases with Det/r ratio and decays gradually, when Det=0 ~ 0.3 r distance, has optimum linear degree; The R of the structure two corresponding to Figure 37
2curve 112 increases with Det/r and increases gradually, and reaches maximum when 0.6 ~ 0.8 r, then starts to reduce; Structure three R corresponding to Figure 38
2curve 113 is increased near 0.6 r with Det and reaches maximal value.
Figure 39-41 is the linear fit parameter R of the angular relationship curve of single-chip off-axis magneto-resistor Z-X angular transducer
2and interval (Space)/r ratio figure, Figure 39 be R corresponding to structure one
2curve 117 with interval (Space)/r ratio figure, along with the increase of interval (Space), its R
2reduce gradually, can find out to there is best linear feature, the R of Figure 40 corresponding to structure two when 0 ~ 0.3 r span
2curve 118, with interval (Space)/r ratio figure, increases with interval (Space), R
2increase gradually, can find out, it has best linear feature when 0.5 ~ 0.7 r.R corresponding to Figure 41 counter structure three
2curve 119 has best linear feature near 0.6 r.
In addition, the magneto-resistor Z-X angular transducer chip of longitudinal comparison three types, can find out, the single-chip off-axis magneto-resistor Z-X angular transducer of the first type has best performance characteristic.
The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any amendment done, equivalent replacement, improvement etc., all should be included within protection domain of the present utility model.
Claims (31)
1. a single-chip off-axis magneto-resistor Z-X angular transducer, for detecting the magnetic field rotating angle in the plane vertical with substrate surface, is characterized in that, described Z-X angular transducer comprises:
Be positioned at the substrate on X-Y plane;
Be positioned at least one the X-axis magnetic resistance sensor on described substrate, for detecting the X-axis magnetic-field component being parallel to described substrate surface;
Be positioned at least one the Z axis magnetic resistance sensor on described substrate, for detecting the Z axis magnetic-field component perpendicular to described substrate surface;
Described X-axis magnetic resistance sensor and described Z axis magnetic resistance sensor include magneto-resistor sensing unit and flux concentrator, described flux concentrator is strip, its longer axis parallel is in Y direction, and minor axis parallel is in X-direction, and the sensitive direction of described magneto-resistor sensing unit is parallel to X-direction;
The magneto-resistor sensing unit of described Z axis magnetic resistance sensor and the magneto-resistor sensing unit of described X-axis magnetic resistance sensor are electrically connected the magneto-resistor bridge being connected into and comprising at least two brachium pontis all respectively, wherein, each described brachium pontis is the two-port structure of one or more described magneto-resistor sensing unit electrical connection, and the magneto-resistor sensing unit in described brachium pontis is arranged in multiple magnetoresistance cells row along being parallel to Y direction;
The magneto-resistor bridge of described Z axis magnetic resistance sensor is push-pull type electric bridge, wherein, push arm and drawing bow lays respectively at the not homonymy of the Y-axis center line above or below the flux concentrator in described Z axis magnetic resistance sensor, and equal to the distance of each self-corresponding described Y-axis center line;
The magneto-resistor bridge of described X-axis magnetic resistance sensor is with reference to formula electric bridge, wherein, reference arm is arranged on the Y-axis position of center line above or below described X-axis magnetic resistance sensor flux concentrator, responsive arm be arranged in described X-axis magnetic resistance sensor flux concentrator above or below Y-axis distance between center line be greater than on the position of a half width of flux concentrator.
2. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, is characterized in that, described flux concentrator is the magnetically soft alloy material comprising a kind of element in Ni, Fe, Co or multiple element.
3. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, described magneto-resistor sensing unit is GMR or TMR magneto-resistor sensing unit.
4. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, described Z axis magnetic resistance sensor comprises two Z axis magnetic resistance sensor subelements, and be positioned at the both sides of described X-axis magnetic resistance sensor respectively along described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
5. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, described X-axis magnetic resistance sensor comprises two X-axis magnetic resistance sensor subelements, and be positioned at the both sides of described Z axis magnetic resistance sensor respectively along described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
6. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, described X-axis, Z axis magnetic resistance sensor comprise multiple X-axis magnetic resistance sensor subelement, Z axis magnetic resistance sensor subelement respectively, and along the alternately arrangement of described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
7. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor arrange along described Y direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor.
8. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, the magneto-resistor sensing unit of described Z axis magnetic resistance sensor and the magneto-resistor sensing unit of described X-axis magnetic resistance sensor are along described X-direction mixing arrangement, and described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor have common described flux concentrator.
9. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to any one of claim 4-7, it is characterized in that, described Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise 1 described flux concentrator, and described magneto-resistor sensing unit corresponds to described 1 flux concentrator.
10. a kind of single-chip off-axis magneto-resistor Z-X angular transducer according to any one of claim 4-7, it is characterized in that, described Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise 2 described flux concentrators, the position of described push arm and the Y-axis center line not homonymy laying respectively at described 2 flux concentrators of drawing bow.
11. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to any one of claim 4-7, it is characterized in that, described Z axis magnetic resistance sensor or Z axis magnetic resistance sensor subelement comprise N+2 described flux concentrator, and described magneto-resistor sensing unit corresponds to middle N number of described flux concentrator, described N is positive integer.
12. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to any one of claim 4-7, it is characterized in that, described X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise 2N magnetoresistance cells row, and the spacing in described X-axis magnetic resistance sensor between adjacent two described flux concentrators is L; When the flux concentrator quantity of described X-axis magnetic resistance sensor is 2N-2, two in the middle of described X-axis magnetic resistance sensor described magnetoresistance cells arrange adjacent and correspond to reference arm, and spacing is 2L; When the flux concentrator quantity of described X-axis magnetic resistance sensor is 2N-1, the described magnetoresistance cells row of two of described X-axis magnetic resistance sensor middle correspond to responsive arm, and spacing is 2L, and wherein L is natural number, described N be greater than 1 integer.
13. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to any one of claim 4-7, it is characterized in that, described X-axis magnetic resistance sensor or X-axis magnetic resistance sensor subelement comprise 2N magnetoresistance cells row and 2N-1 described flux concentrator, and the magnetoresistance cells of described X-axis magnetic resistance sensor row are alternately distributed above or below the flux concentrator of described X-axis magnetic resistance sensor and are greater than the position of flux concentrator one half width of described X-axis magnetic resistance sensor apart from Y-axis center line, described N is positive integer.
14. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 8, it is characterized in that, when described flux concentrator quantity is 2N+2, described Z axis magnetic resistance sensor comprises 4N magnetoresistance cells row, and correspond to middle 2N described flux concentrator, described X-axis magnetic resistance sensor comprises 2N+2 magnetoresistance cells row, and the distance between two magnetoresistance cells row of described X-axis magnetic resistance sensor centre is 4L, distance between adjacent two described flux concentrators is L, wherein L is natural number, described N be greater than 1 integer.
15. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 8, it is characterized in that, described common flux concentrator quantity is 2N+2, described Z axis magnetic resistance sensor comprises 4N magnetoresistance cells row, correspond respectively to middle 2N described flux concentrator, the magnetoresistance cells number of columns that described X-axis magnetic resistance sensor comprises is 4N, and the distance between two magnetoresistance cells row of described X-axis magnetic resistance sensor centre is 2L, distance between adjacent two described flux concentrators is L, wherein L is natural number, described N be greater than 1 integer.
16. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 8, it is characterized in that, described flux concentrator quantity is N, the magnetoresistance cells number of columns that described Z axis magnetic resistance sensor comprises is 2 (N-2), N-2 described flux concentrator in the middle of corresponding, the magnetoresistance cells number of columns that described X-axis magnetic resistance sensor comprises is 2 (N-1), and the Y-axis center line of a wherein described flux concentrator of side is distributed with magnetoresistance cells row, described N be greater than 3 integer.
17. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, reference arm in described X-axis magnetic resistance sensor is identical with the quantity of the magnetoresistance cells row corresponding to responsive arm, and the push arm in described Z axis magnetic resistance sensor is identical with the quantity of the magnetoresistance cells row of drawing bow corresponding.
18. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 8, it is characterized in that, described Z axis magnetic resistance sensor is identical with the described flux concentrator width corresponding to X-axis magnetic resistance sensor, and thickness is also identical.
19. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, the field gain coefficient at the magnetoresistance cells row position place of the gap location between the flux concentrator of described X-axis magnetic resistance sensor is 1<Asns<100, and above or below the flux concentrator of described X-axis magnetic resistance sensor, the field decay coefficient of the magnetoresistance cells row position of Y-axis centerline is 0<Aref<1.
20. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, the spacing L in described Z axis magnetic resistance sensor between adjacent two described flux concentrators is not less than the width Lx of the flux concentrator of described Z axis magnetic resistance sensor.
21. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, spacing L>2Lx in described Z axis magnetic resistance sensor between adjacent two described flux concentrators, described Lx are the width of flux concentrator described in described Z axis magnetic resistance sensor.
22. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, for described Z axis magnetic resistance sensor, above or below described magnetoresistance cells row on it and described magnetic flux concentrator, the spacing at edge is less, or the thickness Lz of the described magnetic flux concentrator on it is larger, or the width Lx of the described magnetic flux concentrator on it is less, the sensitivity of described Z axis magnetic resistance sensor is higher.
23. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, the reference formula electric bridge of described X-axis magnetic resistance sensor and/or the push-pull type electric bridge of described Z axis magnetic resistance sensor are the one in half-bridge, full-bridge or accurate bridge construction.
24. a kind of single-chip off-axis magneto-resistor Z-X angular transducers according to claim 1, it is characterized in that, the magneto-resistor sensing unit of described X-axis magnetic resistance sensor and Z axis magnetic resistance sensor all has identical magnetic field sensitivity.
25. 1 kinds of off-axis magneto-resistor Z-X angel measuring instruments, comprise single-chip off-axis magneto-resistor Z-X angular transducer according to claim 1, it is characterized in that, described off-axis magneto-resistor Z-X angel measuring instrument also comprises Circular permanent magnet code-disc, the direction of magnetization of described Circular permanent magnet code-disc is parallel to the Plane of rotation and the straight line in the center of circle of the described Circular permanent magnet code-disc of mistake that are positioned at described Circular permanent magnet code-disc, the Width of described Circular permanent magnet code-disc and turning axle direction are all along described Y direction, Plane of rotation is X-Z plane, the X-Y plane at described substrate place is Det apart from the distance at described Circular permanent magnet code-disc edge, and Z axis crosses the described center of single-chip off-axis Z-X magneto-resistor angular transducer and the axle center of described Circular permanent magnet code-disc, described Det>0.
26. off-axis magneto-resistor Z-X angel measuring instruments according to claim 25, it is characterized in that, described Z axis magnetic resistance sensor comprises two Z axis magnetic resistance sensor subelements, and the both sides of described X-axis magnetic resistance sensor are positioned at respectively along described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor, described Det is 0.2-0.3 r, and being spaced apart 0-0.3 r between described X-axis magnetic resistance sensor and described Z axis magnetic resistance sensor subelement, r is the radius of described Circular permanent magnet code-disc.
27. off-axis magneto-resistor Z-X angel measuring instruments according to claim 25, it is characterized in that, X-axis magnetic resistance sensor comprises two X-axis magnetic resistance sensor subelements, and the both sides of described Z axis magnetic resistance sensor are positioned at respectively along X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with X-axis magnetic resistance sensor, described Det is 0.6-0.8 r, and being spaced apart 0.5-0.7 r between described X-axis magnetic resistance sensor subelement and Z axis magnetic resistance sensor, r is the radius of described Circular permanent magnet code-disc.
28. off-axis magneto-resistor Z-X angel measuring instruments according to claim 25, it is characterized in that, described X-axis magnetic resistance sensor, described Z axis magnetic resistance sensor comprises multiple X-axis magnetic resistance sensor subelement respectively, Z axis magnetic resistance sensor subelement, and along the alternately arrangement of described X-direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor, described Det is 0.5-0.7 r, and be spaced apart 0.6 r between adjacent described Z axis magnetic resistance sensor subelement and described X-axis magnetic resistance sensor subelement, r is described Circular permanent magnet code-disc radius.
29. off-axis magneto-resistor Z-X angel measuring instruments according to claim 25, it is characterized in that, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor arrange along described Y direction, the described flux concentrator that described Z axis magnetic resistance sensor is corresponding different respectively with described X-axis magnetic resistance sensor, the radius of described Det to be 0.5-0.7 r, r be described Circular permanent magnet code-disc.
30. off-axis magneto-resistor Z-X angel measuring instruments according to claim 25, it is characterized in that, the magneto-resistor sensing unit of described Z axis magnetic resistance sensor and the magneto-resistor sensing unit of described X-axis magnetic resistance sensor are along described X-direction mixing arrangement, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor have common described flux concentrator, the radius of described Det to be 0.5-0.7 r, r be described Circular permanent magnet code-disc.
31. off-axis magneto-resistor Z-X angel measuring instruments according to claim 25, it is characterized in that, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor arrange along described Y direction, described Z axis magnetic resistance sensor and described X-axis magnetic resistance sensor do not have common described flux concentrator, and described single-chip off-axis magneto-resistor Z-X angular transducer is positioned at X-axis and the Z axis field homogeneity district of described Circular permanent magnet code-disc along the Width of described Circular permanent magnet code-disc.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104197828A (en) * | 2014-08-20 | 2014-12-10 | 江苏多维科技有限公司 | Z-X angle sensor and measuring instrument of single-chip off-axis magnetic resistor |
| WO2016124131A1 (en) * | 2015-02-04 | 2016-08-11 | 江苏多维科技有限公司 | Magnetic automation flow recorder |
| EP3290932A4 (en) * | 2015-04-27 | 2019-02-20 | Multidimension Technology Co., Ltd. | Integrated current sensor using z-axis magnetoresistive gradiometer and lead frame current |
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2014
- 2014-08-20 CN CN201420470308.8U patent/CN204043604U/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104197828A (en) * | 2014-08-20 | 2014-12-10 | 江苏多维科技有限公司 | Z-X angle sensor and measuring instrument of single-chip off-axis magnetic resistor |
| WO2016026419A1 (en) * | 2014-08-20 | 2016-02-25 | 江苏多维科技有限公司 | Single-chip off-axis magnetoresistive z-x angle sensor and measuring instrument |
| CN104197828B (en) * | 2014-08-20 | 2017-07-07 | 江苏多维科技有限公司 | A kind of single-chip off-axis magneto-resistor Z X angular transducers and measuring instrument |
| US10473449B2 (en) | 2014-08-20 | 2019-11-12 | MultiDimension Technology Co., Ltd. | Single-chip off-axis magnetoresistive Z-X angle sensor and measuring instrument |
| WO2016124131A1 (en) * | 2015-02-04 | 2016-08-11 | 江苏多维科技有限公司 | Magnetic automation flow recorder |
| US11636889B2 (en) | 2015-02-04 | 2023-04-25 | MultiDimension Technology Co., Ltd. | Automatic magnetic flow recording device |
| EP3290932A4 (en) * | 2015-04-27 | 2019-02-20 | Multidimension Technology Co., Ltd. | Integrated current sensor using z-axis magnetoresistive gradiometer and lead frame current |
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