CN204031077U - Rf power amplifier circuit and radio-frequency power amplifier - Google Patents
Rf power amplifier circuit and radio-frequency power amplifier Download PDFInfo
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- CN204031077U CN204031077U CN201420406488.3U CN201420406488U CN204031077U CN 204031077 U CN204031077 U CN 204031077U CN 201420406488 U CN201420406488 U CN 201420406488U CN 204031077 U CN204031077 U CN 204031077U
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Abstract
The utility model discloses a kind of rf power amplifier circuit, comprise pre-amplifier, post-amplifier and intervalve matching circuit, described intervalve matching circuit is arranged between described pre-amplifier and described post-amplifier, and described intervalve matching circuit comprises the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity and the first resistance.Described first electric capacity, described 3rd electric capacity and described first resistance are connected between the output of described pre-amplifier and the input of described post-amplifier after connecting successively; Described second electric capacity one end is connected to the output of described pre-amplifier, other end ground connection; Described 4th electric capacity one end is connected between described 3rd electric capacity and described first resistance, other end ground connection; A described first resistance two ends wire in parallel.Above-mentioned rf power amplifier circuit, can realize good interstage matched, has the advantage of high-gain.A kind of radio-frequency power amplifier is also provided.
Description
Technical field
The utility model relates to communication technical field, particularly relates to a kind of rf power amplifier circuit and radio-frequency power amplifier.
Background technology
Radio-frequency power amplifier is the important component part in various Wireless Telecom Equipment, and it adopts bipolar or casacade multi-amplifier cascade to realize radio-frequency power amplifier usually.In cascade, each inter-stage needs to use match circuit to realize impedance matching, to improve the gain of radio-frequency power amplifier.The impedance matching methods of traditional rf power amplifier circuit is all that the input of prime output and rear class is matched to 50 ohm (resistance value is generally 50 ohm), and then carries out cascade.Adopt its gain of the radio-frequency power amplifier of this matching way lower, unsatisfactory.
Utility model content
Based on this, be necessary for the problems referred to above, a kind of rf power amplifier circuit with high-gain is provided.
A kind of radio-frequency power amplifier with high-gain is also provided.
A kind of rf power amplifier circuit, comprise pre-amplifier, post-amplifier and intervalve matching circuit, described intervalve matching circuit is arranged between described pre-amplifier and described post-amplifier, and described intervalve matching circuit comprises the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity and the first resistance; Described first electric capacity, described 3rd electric capacity and described first resistance are connected between the output of described pre-amplifier and the input of described post-amplifier after connecting successively; Described second electric capacity one end is connected to the output of described pre-amplifier, other end ground connection; Described 4th electric capacity one end is connected between described 3rd electric capacity and described first resistance, other end ground connection; A described first resistance two ends wire in parallel.
Wherein in an embodiment, described intervalve matching circuit also comprises inductance match circuit, and described inductance match circuit comprises micro-band inductance and coil inductance; Described micro-band inductance one end is connected between described first electric capacity and described 3rd electric capacity, other end ground connection; Described coil inductance one end is connected between described first electric capacity and described 3rd electric capacity, other end ground connection.
Wherein in an embodiment, also comprise negative-feedback circuit, between the input that described negative-feedback circuit is parallel to described pre-amplifier and output, comprise the 5th electric capacity, with the second resistance of described 5th capacitances in series.
Wherein in an embodiment, also comprise prime input matching circuit and rear class output matching circuit; Described prime input matching circuit is connected with the input of described pre-amplifier; Described rear class output matching circuit is connected with the output of described post-amplifier.
Wherein in an embodiment, described rear class output matching circuit comprises the 6th to the 13 electric capacity, the 3rd to the 5th inductance; The output of described post-amplifier is connected to after described 3rd to the 5th inductance and described 13 capacitances in series; Described 6th electric capacity one end is connected between described post-amplifier and described 3rd inductance, the equal ground connection of the other end; Described 7th electric capacity and described 8th electric capacity and described 6th Capacitance parallel connection; One end of described 9th electric capacity is connected between described 3rd inductance and described 4th inductance, other end ground connection, described tenth electric capacity and described 9th Capacitance parallel connection; Described 11 electric capacity one end is connected between the 4th inductance and the 5th inductance, other end ground connection; Described 12 electric capacity one end is connected between described 5th inductance and described 13 electric capacity, other end ground connection.
Wherein in an embodiment, described pre-amplifier and described post-amplifier are a metal-oxide-semiconductor.
Wherein in an embodiment, also comprise power supply circuits, described power supply circuits are used for powering to the enter backward described pre-amplifier of the capable filtering of coupling and described post-amplifier of power supply.
A kind of radio-frequency power amplifier, comprise printed circuit board (PCB), the first housing and the second housing, described first housing and described second housing form enclosure space jointly for receiving described printed circuit board (PCB), described printed circuit board (PCB) are provided with as above arbitrary described rf power amplifier circuit.
Wherein in an embodiment, described printed circuit board (PCB) is fixed on described first housing; Described first housing is being provided with corresponding section, post-amplifier position the square groove that has first degree of depth.
Wherein in an embodiment, described first housing is fin, for dispelling the heat to described radio-frequency power amplifier; Described second housing is radome, for carrying out electromagnetic shielding protection to described rf power amplifier circuit.
Above-mentioned rf power amplifier circuit and radio-frequency power amplifier, by arranging the coupling that can realize between prime output and rear class input to intervalve matching circuit, thus realize good interstage matched, and then realize the high-gain of whole circuit.Meanwhile, by the setting to intervalve matching circuit, reduce match circuit area, be conducive to the miniaturization realizing equipment.
Above-mentioned radio frequency high-power amplifying circuit and radio-frequency power amplifier, rear class output matching circuit, by the Match circuits of low pass, both can realize the impedance matching of output, can also suppress second harmonic, meets the demand of production and equipment.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the rf power amplifier circuit in an embodiment;
Fig. 2 is the schematic diagram of the rf power amplifier circuit in another embodiment.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the utility model, and be not used in restriction the utility model.
Fig. 1 is the schematic diagram of the rf power amplifier circuit in an embodiment.Radio frequency amplifying circuit comprises pre-amplifier 110, post-amplifier 120 and intervalve matching circuit 130.Intervalve matching circuit 130 is arranged between pre-amplifier 110 and post-amplifier 120.In the present embodiment, prime and rear class are for radio signal transmission direction.Pre-amplifier 110 and post-amplifier 120 are successively arranged along radio signal transmission direction.
In the present embodiment, intervalve matching circuit 130 comprises the first electric capacity C1, the second electric capacity C2, the 3rd electric capacity C3, the 4th electric capacity C4 and the first resistance R1.Be connected between the output of pre-amplifier 110 and the input of post-amplifier 120 after first electric capacity C1, the 3rd electric capacity C3 and the first resistance R1 connect successively.Second electric capacity C2 one end is connected to the output of pre-amplifier 110, other end ground connection.4th electric capacity C4 one end is connected between the 3rd electric capacity C3 and the first resistance R1, other end ground connection.Wherein, the two ends of a first resistance R1 wire in parallel.In the present embodiment, in intervalve matching circuit, the impedance of pre-amplifier output is larger, and the impedance of rear class amplifier in is less, can by the output of the input resistant matching of post-amplifier 120 to pre-amplifier 110, thus realize good interstage matched, and then realize the high-gain of whole circuit.
In the present embodiment, intervalve matching circuit 130 also comprises inductance match circuit 132.Inductance match circuit 132 for regulating interstage matched, to realize the optimization of interstage matched.Particularly, inductance match circuit 132 comprises micro-band inductance L1 and coil inductance L2.Be connected between the first electric capacity C1 and the 3rd electric capacity C3 after one end of micro-band inductance L1 is connected with one end of coil inductance L2.Wherein, the other end ground connection of micro-band inductance L1, the other end ground connection of coil inductance L2.Inductance match circuit 132 can not only realize the optimizing regulation to interstage matched, can also effectively reduce the electromagnetic interference of circuit, ensures effective transmission of signal.
Above-mentioned rf power amplifier circuit, by the output of the input resistant matching of post-amplifier 120 to pre-amplifier 110, thus can realize good interstage matched, and then realize the high-gain of whole circuit.Meanwhile, simplify match circuit area, use device less, corresponding production cost reduces; Circuit Insertion Loss is less thus gain is improved further.Above-mentioned rf power amplifier circuit may be used for, in Vehicle mounted station intercom, also going for the wireless transmission occasions such as individual soldier radio station.
In the present embodiment, pre-amplifier 110 and post-amplifier 120 are a metal-oxide-semiconductor.Wherein, pre-amplifier 110 is adopted as that power is 1W, model is the metal-oxide-semiconductor of RD01, and post-amplifier 120 adopts model to be the metal-oxide-semiconductor of AFT05MS031N.Radiofrequency signal, through the amplification of pre-amplifier 110, can reach the power of 1-2W, then through the amplification of post-amplifier 120, can reach the power being greater than 30W.Meanwhile, by adopting RD01 and AFT05MS031N, the efficiency of circuit is higher, and efficiency is greater than 60%, and energy consumption is lower, and device lifetime is longer, works more stable.In other examples, pre-amplifier 110 also can adopt the power amplifying device of other about 1W to replace, and is not limited to the RD01 in the present embodiment.
Fig. 2 is the schematic diagram of the rf power amplifier circuit in another embodiment.In the present embodiment, rf power amplifier circuit comprises pre-amplifier 210, post-amplifier 220, intervalve matching circuit 230, prime input matching circuit 240, negative-feedback circuit 250, rear class output matching circuit 260.Wherein, pre-amplifier 210, post-amplifier 220 and intervalve matching circuit 230 by the agency of in the aforementioned embodiment, does not repeat herein.
Prime input matching circuit 240 is connected to the input of pre-amplifier 210, for carrying out input resistant matching to pre-amplifier 210.Rear class output matching circuit 260 is connected to the output of post-amplifier 220, for carrying out output impedance coupling to post-amplifier 220.In the present embodiment, prime input matching circuit 240 is π type attenuator circuit.
In the present embodiment, rear class output matching circuit 260 comprises the 6th to the 13 electric capacity (C6 ~ C13), and the 3rd to the 5th inductance (L3 ~ L5).Particularly, the output of post-amplifier 220 is connected to after the 3rd inductance L 3 to the 5th inductance L the 5, the 13 electric capacity C13 series connection.6th electric capacity C6 one end is connected between post-amplifier 220 and the 3rd inductance L 3, other end ground connection.7th electric capacity C7 and the 8th electric capacity C8 is in parallel with the 6th electric capacity C6.9th electric capacity C9 one end is connected between the 3rd inductance L 3 and the 4th inductance L 4, other end ground connection.Tenth electric capacity C10 is in parallel with the 9th electric capacity C9.11 electric capacity C11 one end is connected between the 4th inductance L 4 and the 5th inductance L 5, other end ground connection.12 electric capacity C12 one end is connected between the 5th inductance L the 5 and the 13 electric capacity C13, other end ground connection.Rear class output matching circuit 220, by the Match circuits of low pass, both can realize the impedance matching of output, can also suppress second harmonic, meets the demand of production and equipment.
Between the input that negative-feedback circuit 250 is parallel to pre-amplifier 210 and output, comprise the 5th electric capacity C5 and the second resistance R2.Wherein, the 5th electric capacity C5 and the second resistance R2 connects.Pre-amplifier 210 is metal-oxide-semiconductor Q1 in the present embodiment.The input of pre-amplifier 210 is the grid of metal-oxide-semiconductor Q1, and output is the drain electrode of metal-oxide-semiconductor Q1, the source ground of metal-oxide-semiconductor Q1.Negative-feedback circuit 250 improves the stability of circuit.
In the present embodiment, above-mentioned rf power amplifier circuit also comprises power supply circuits.Power supply circuits are used for entering to power to pre-amplifier 210 and post-amplifier 220 after the capable filtering of coupling to power supply.Particularly, filtering decoupling bleeder circuit 270 is provided with at the input of pre-amplifier 210, the input of post-amplifier 220.Filtering decoupling circuit 280 is equipped with at the output of pre-amplifier 210, the output of post-amplifier 220.Can improve the stability of circuit further by setting up filtering decoupling bleeder circuit 270 and filtering decoupling circuit 280, device lifetime is longer.
In the utility model, additionally provide a kind of radio-frequency power amplifier.Radio-frequency power amplifier comprises the first housing, the second housing and printed circuit board (PCB) (pcb board).Wherein, printed circuit board (PCB) is provided with as the rf power amplifier circuit in aforementioned any embodiment.First housing and the second housing form enclosure space jointly for receiving printed circuit board (PCB).Printed circuit is fixed on the first housing.First housing is provided with corresponding section, post-amplifier position the square groove that has first degree of depth, and the paster being convenient to post-amplifier is installed.In the present embodiment, first degree of depth is 0.3 millimeter.First degree of depth can set according to the concrete structure of post-amplifier.
First housing is fin, and it adopts red copper nickel plating material.Printed circuit board (PCB) direct sintering, on the first housing, plays good radiating effect.First housing arranges location hole and fixing hole simultaneously.Location hole is used for positioning printed circuit board (PCB), is convenient to the installation of printed circuit board (PCB).Fixing hole is used for fixing the first housing and the second housing.In the present embodiment, the second housing is radome, and it adopts stainless steel material, can shield most electromagenetic wave radiation, has good electromagnetic wave radiation shielding effect, plays good protective effect to circuit.In other examples, the material of the first housing and the second housing tool radiating effect that other those skilled in the art also can be adopted respectively known and electromagnetic wave radiation shielding effect.
Above-mentioned efficiency of RF power amplifier is higher, and caloric value is few, and circuit integrity temperature can not be too high, and device lifetime is longer, and consumes power is less, meets the theory of environmental protection.
The above embodiment only have expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (10)
1. a rf power amplifier circuit, comprise pre-amplifier, post-amplifier and intervalve matching circuit, described intervalve matching circuit is arranged between described pre-amplifier and described post-amplifier, it is characterized in that, described intervalve matching circuit comprises the first electric capacity, the second electric capacity, the 3rd electric capacity, the 4th electric capacity and the first resistance;
Described first electric capacity, described 3rd electric capacity and described first resistance are connected between the output of described pre-amplifier and the input of described post-amplifier after connecting successively; Described second electric capacity one end is connected to the output of described pre-amplifier, other end ground connection; Described 4th electric capacity one end is connected between described 3rd electric capacity and described first resistance, other end ground connection; A described first resistance two ends wire in parallel.
2. rf power amplifier circuit according to claim 1, is characterized in that, described intervalve matching circuit also comprises inductance match circuit, and described inductance match circuit comprises micro-band inductance and coil inductance; Described micro-band inductance one end is connected between described first electric capacity and described 3rd electric capacity, other end ground connection; Described coil inductance one end is connected between described first electric capacity and described 3rd electric capacity, other end ground connection.
3. rf power amplifier circuit according to claim 1, it is characterized in that, also comprise negative-feedback circuit, between the input that described negative-feedback circuit is parallel to described pre-amplifier and output, comprise the 5th electric capacity, with the second resistance of described 5th capacitances in series.
4. rf power amplifier circuit according to claim 1, is characterized in that, also comprises prime input matching circuit and rear class output matching circuit; Described prime input matching circuit is connected with the input of described pre-amplifier; Described rear class output matching circuit is connected with the output of described post-amplifier.
5. rf power amplifier circuit according to claim 4, is characterized in that, described rear class output matching circuit comprises the 6th to the 13 electric capacity, the 3rd to the 5th inductance; The output of described post-amplifier is connected to after described 3rd to the 5th inductance and described 13 capacitances in series; Described 6th electric capacity one end is connected between described post-amplifier and described 3rd inductance, the equal ground connection of the other end; Described 7th electric capacity and described 8th electric capacity and described 6th Capacitance parallel connection; Described 9th electric capacity one end is connected between described 3rd inductance and described 4th inductance, other end ground connection, described tenth electric capacity and described 9th Capacitance parallel connection; Described 11 electric capacity one end is connected between the 4th inductance and the 5th inductance, other end ground connection; Described 12 electric capacity one end is connected between described 5th inductance and described 13 electric capacity, other end ground connection.
6. rf power amplifier circuit according to claim 1, is characterized in that, described pre-amplifier and described post-amplifier are a metal-oxide-semiconductor.
7. rf power amplifier circuit according to claim 1, is characterized in that, also comprises power supply circuits, and described power supply circuits are used for powering to the enter backward described pre-amplifier of the capable filtering of coupling and described post-amplifier of power supply.
8. a radio-frequency power amplifier, comprise printed circuit board (PCB), the first housing and the second housing, described first housing and described second housing form enclosure space jointly for receiving described printed circuit board (PCB), it is characterized in that, described printed circuit board (PCB) is provided with as arbitrary in claim 1 ~ 7 as described in rf power amplifier circuit.
9. radio-frequency power amplifier according to claim 8, is characterized in that, described printed circuit board (PCB) is fixed on described first housing; Described first housing is being provided with corresponding section, post-amplifier position the square groove that has first degree of depth.
10. radio-frequency power amplifier according to claim 8, is characterized in that, described first housing is fin, for dispelling the heat to described radio-frequency power amplifier; Described second housing is radome, for carrying out electromagnetic shielding protection to described rf power amplifier circuit.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420406488.3U CN204031077U (en) | 2014-07-22 | 2014-07-22 | Rf power amplifier circuit and radio-frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201420406488.3U CN204031077U (en) | 2014-07-22 | 2014-07-22 | Rf power amplifier circuit and radio-frequency power amplifier |
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| CN204031077U true CN204031077U (en) | 2014-12-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021232601A1 (en) * | 2020-05-21 | 2021-11-25 | 张金路 | Composite series digital power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021232601A1 (en) * | 2020-05-21 | 2021-11-25 | 张金路 | Composite series digital power amplifier |
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Effective date of registration: 20151104 Address after: News 518034 Shenzhen Road, No. 1 Futian District, Guangdong Province in the information building 2 building building electric port Patentee after: SHENZHEN ZHONGDIAN INTERNATIONAL INFORMATION TECHNOLOGY CO., LTD. Address before: 518000, 8 floor, Yu Xiang building, Futian District overseas Chinese road, Shenzhen, Guangdong Patentee before: CHINA ELECTRONIC APPLIANCE (SHENZHEN) CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: News 518034 Shenzhen Road, No. 1 Futian District, Guangdong Province in the information building 2 building building electric port Patentee after: Shenzhen Zhongdian Port Technology Co.,Ltd. Address before: News 518034 Shenzhen Road, No. 1 Futian District, Guangdong Province in the information building 2 building building electric port Patentee before: SHENZHEN CEC INTERNATIONAL INFORMATION TECHNOLOGY Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |