CN204028740U - A kind of current foldback circuit that is applied to LDO - Google Patents

A kind of current foldback circuit that is applied to LDO Download PDF

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Publication number
CN204028740U
CN204028740U CN201420404374.5U CN201420404374U CN204028740U CN 204028740 U CN204028740 U CN 204028740U CN 201420404374 U CN201420404374 U CN 201420404374U CN 204028740 U CN204028740 U CN 204028740U
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China
Prior art keywords
drain electrode
connects
grid
ldo
source electrode
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Expired - Fee Related
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CN201420404374.5U
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Chinese (zh)
Inventor
杨洁
彭侨
邹江
阳芝林
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Zunyi Normal University
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Zunyi Normal University
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Priority to CN201420404374.5U priority Critical patent/CN204028740U/en
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Publication of CN204028740U publication Critical patent/CN204028740U/en
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The utility model discloses the current foldback circuit of a kind of LDO of being applied to, it comprises LDO chip, metal-oxide-semiconductor M1-M9, MP1, MP2, insurance resistance R 1, R2, RF1, RF2, wherein, described LDO chip output connects respectively MP1, M1, M2, M3, the grid of M4 and the drain electrode of MP2, the drain electrode of M1 connects the source electrode of M2, the drain electrode of M2 connects the source electrode of M3, the drain electrode of M3 connects the source electrode of M4, the drain electrode of M4 connects the source electrode of M5, the grid of M5, the grid of M8, the drain electrode of M8, the drain electrode of M7 is connected, the other end of RF1 connects the feed back input negative pole of RF2 and LDO chip.The beneficial effects of the utility model are: when power adjustment tube current increases to certain certain value, open with the metal-oxide-semiconductor that LDO output terminal is connected, extract output end current, prevent that feedback branch electric current is excessive, reached the object of overcurrent protection.

Description

A kind of current foldback circuit that is applied to LDO
Technical field
The utility model relates to the current foldback circuit of a kind of LDO of being applied to, belongs to electronic technology field.
Background technology
Along with the raising of semiconductor process techniques is with the fast development with portable type electronic product, power supply IC (integrated circuit) has had considerable progress.Power supply IC product mainly comprises the pre-steady device of linear voltage regulator (LDO), Switching Power Supply, AC/DC voltage stabilizer (ac/dc voltage stabilizer) and power factor correction (PFC) etc.And wherein linear voltage regulator is the most frequently used power management chip, because linear voltage regulator is easy to use, volume is little, functional and high reliability, so occupy very large proportion in power management market.The power consumption consuming during due to LDO chip operation depends on the external conditions such as input voltage, load, and under some abnormal conditions, it is very large that the power consumption of chip internal can become, and causes Short-Circuit High Current can make power adjust pipe and is burned.
Summary of the invention
The purpose of this utility model is to provide the current foldback circuit of a kind of LDO of being applied to, overcomes the deficiencies in the prior art, plays the effect of overcurrent protection.
The purpose of this utility model is achieved through the following technical solutions: a kind of current foldback circuit that is applied to LDO, and it comprises LDO chip, metal-oxide-semiconductor M1-M9, MP1, MP2, insurance resistance R 1, R2, RF1, RF2, wherein, described LDO chip output connects respectively MP1, M1, M2, M3, the grid of M4 and the drain electrode of MP2, MP1, M1, the source electrode of MP2 and R2 are connected to the voltage input point of circuit, the drain electrode connection RF1 of MP1 and the output point that R1 is circuit, and the drain electrode of M1 connects the source electrode of M2, the drain electrode of M2 connects the source electrode of M3, the drain electrode of M3 connects the source electrode of M4, and the drain electrode of M4 connects the source electrode of M5, the grid of M5, the grid of M8, the drain electrode of M8, the drain electrode of M7 is connected, and the source electrode of M8 connects the other end of R1, the drain electrode of M5, the drain electrode of M6, the grid of M6, the grid of M7, the grid of M9 is connected, M9, M6, the source ground of M7, the other end of RF1 connects the feed back input negative pole of RF2 and LDO chip, the anodal input reference voltage of LDO chip, the other end ground connection of RF2, the drain electrode of M9 connects the other end of R2 and the grid of MP2.
Described metal-oxide-semiconductor M1-M4's is measure-alike.
The beneficial effects of the utility model are: when power adjustment tube current increases to certain certain value, open with the metal-oxide-semiconductor that LDO output terminal is connected, extract output end current, prevent that feedback branch electric current is excessive, reached the object of overcurrent protection.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, further describe the technical solution of the utility model, but described in claimed scope is not limited to.
As Fig. 1, a kind of current foldback circuit that is applied to LDO, it comprises LDO chip, metal-oxide-semiconductor M1-M9, MP1, MP2, insurance resistance R 1, R2, RF1, RF2, wherein, described LDO chip output connects respectively MP1, M1, M2, M3, the grid of M4 and the drain electrode of MP2, MP1, M1, the source electrode of MP2 and R2 are connected to the voltage input point of circuit, the drain electrode connection RF1 of MP1 and the output point that R1 is circuit, and the drain electrode of M1 connects the source electrode of M2, the drain electrode of M2 connects the source electrode of M3, the drain electrode of M3 connects the source electrode of M4, and the drain electrode of M4 connects the source electrode of M5, the grid of M5, the grid of M8, the drain electrode of M8, the drain electrode of M7 is connected, and the source electrode of M8 connects the other end of R1, the drain electrode of M5, the drain electrode of M6, the grid of M6, the grid of M7, the grid of M9 is connected, M9, M6, the source ground of M7, the other end of RF1 connects the feed back input negative pole of RF2 and LDO chip, the anodal input reference voltage of LDO chip, the other end ground connection of RF2, the drain electrode of M9 connects the other end of R2 and the grid of MP2.
Described metal-oxide-semiconductor M1-M4's is measure-alike.
Wherein, between M4 and M5, be provided with a reference voltage point Q, the effect of M5, M8 is clamp Q point voltage and output voltage VO UT, power adjustment pipe access output voltage VO UT, thereby the VDS voltage of M1-M4 and power adjustment pipe are approached, guarantee mirror image precision, enable the electric current of the pipe of induced power adjustment more accurately.M1-M4 pipe is 4 measure-alike pipes that are cascaded, the object of series connection is in order to reduce quiescent current, and match with power adjustment pipe size, being used for induced power adjusts the electric current of pipe, when power adjustment tube current increases to a certain degree, the electric current of M5 also increases, the grid voltage of M6 increases, from output terminal, extract electric current, make feedback branch electric current be unlikely to excessive, grid voltage increase due to M6 simultaneously makes M9 conducting, MP1 conducting simultaneously, thereby raise to the VG point voltage of the VG point Injection Current MP1 grid of MP1 grid, now power is adjusted tube current minimizing, prevented power adjustment pipe and be burned because of large electric current, thereby realized the effect of power adjustment pipe overcurrent protection.

Claims (2)

1. a current foldback circuit that is applied to LDO, is characterized in that: it comprises LDO chip, metal-oxide-semiconductor M1-M9, MP1, MP2, insurance resistance R 1, R2, RF1, RF2, wherein, described LDO chip output connects respectively MP1, M1, M2, M3, the grid of M4 and the drain electrode of MP2, MP1, M1, the source electrode of MP2 is connected with R2 and as the voltage input point of circuit, and the drain electrode of MP1 connects the output point that RF1 and R1 are circuit, and the drain electrode of M1 connects the source electrode of M2, the drain electrode of M2 connects the source electrode of M3, the drain electrode of M3 connects the source electrode of M4, and the drain electrode of M4 connects the source electrode of M5, the grid of M5, the grid of M8, the drain electrode of M8, the drain electrode of M7 is connected, and the source electrode of M8 connects the other end of R1, the drain electrode of M5, the drain electrode of M6, the grid of M6, the grid of M7, the grid of M9 is connected, M9, M6, the source ground of M7, the other end of RF1 connects the feed back input negative pole of RF2 and LDO chip, the anodal input reference voltage of LDO chip, the other end ground connection of RF2, the drain electrode of M9 connects the other end of R2 and the grid of MP2.
2. the current foldback circuit that is applied to LDO according to claim 1, is characterized in that: described metal-oxide-semiconductor M1-M4's is measure-alike.
CN201420404374.5U 2014-07-21 2014-07-21 A kind of current foldback circuit that is applied to LDO Expired - Fee Related CN204028740U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420404374.5U CN204028740U (en) 2014-07-21 2014-07-21 A kind of current foldback circuit that is applied to LDO

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420404374.5U CN204028740U (en) 2014-07-21 2014-07-21 A kind of current foldback circuit that is applied to LDO

Publications (1)

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CN204028740U true CN204028740U (en) 2014-12-17

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105388954A (en) * 2015-12-16 2016-03-09 无锡中微爱芯电子有限公司 Linear voltage regulator circuit
TWI569123B (en) * 2015-03-26 2017-02-01 晨星半導體股份有限公司 Ldo with high power conversion efficiency
CN110069092A (en) * 2019-04-18 2019-07-30 上海华力微电子有限公司 The current foldback circuit of LDO circuit device and LDO circuit
CN110456854A (en) * 2019-08-22 2019-11-15 上海华力微电子有限公司 Low pressure difference linear voltage regulator

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI569123B (en) * 2015-03-26 2017-02-01 晨星半導體股份有限公司 Ldo with high power conversion efficiency
CN105388954A (en) * 2015-12-16 2016-03-09 无锡中微爱芯电子有限公司 Linear voltage regulator circuit
CN105388954B (en) * 2015-12-16 2017-04-19 无锡中微爱芯电子有限公司 Linear voltage regulator circuit
CN110069092A (en) * 2019-04-18 2019-07-30 上海华力微电子有限公司 The current foldback circuit of LDO circuit device and LDO circuit
US11204613B2 (en) 2019-04-18 2021-12-21 Shanghai Huali Microelectronics Corporation LDO circuit device and overcurrent protection circuit thereof
CN110456854A (en) * 2019-08-22 2019-11-15 上海华力微电子有限公司 Low pressure difference linear voltage regulator

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20141217

Termination date: 20150721

EXPY Termination of patent right or utility model