CN204010694U - Phase transition storage - Google Patents
Phase transition storage Download PDFInfo
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- CN204010694U CN204010694U CN201420470068.1U CN201420470068U CN204010694U CN 204010694 U CN204010694 U CN 204010694U CN 201420470068 U CN201420470068 U CN 201420470068U CN 204010694 U CN204010694 U CN 204010694U
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Abstract
The utility model provides a kind of phase transition storage, N phase-change memory cell, and wherein, N is natural number; Described phase-change memory cell at least comprises: word line, bit line, and be positioned at the phase change resistor of described word line and described bit line infall, described phase change resistor along described bit line direction each side establish at least one dummy unit, to increase the layout density of described phase transition storage.The utility model arranges dummy unit by near at phase change resistor, increase the layout density of phase transition storage, and this dummy unit, because not conducting phase change region produces the required electric current of phase transformation, can not affect other device performance, thereby the device performance of bottom electrode is improved; Owing to effectively having improved the device performance of bottom electrode, thereby can be by dwindling the method for bottom electrode, reduce the contact area between bottom electrode and phase-change material, thereby reduce phase change region volume, and then reduce the required electric current of this phase change region generation phase transformation, thereby reduce the power consumption of phase transition storage.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly relates to a kind of phase transition storage.
Background technology
The develop rapidly of infotech needs a large amount of high-performance memory parts.Low pressure, low-power consumption, high speed are the inevitable development trend of memory technology with high density.Phase transition storage (PCRAM, Phase Change Random Access Memory) be the non-volatile solid state semiconductor memory of a new generation growing up on CMOS integrated circuit basis, enter in nanoscale the process of constantly dwindling at device feature size, on less nanoscale, can show on the contrary more excellent properties (low-power consumption, high speed etc.) for the reversible transition material of storing, aspect low pressure, low-power consumption, high speed and high density storage, there is wide commercial prospect.
Phase transition storage has multiple advantage compared with current main product, be expected to substitute the two large class memory technologies that the public knows simultaneously, as be applied to USB flash disk can power-off storage flash memory technology, be and for example applied to the DRAM technology of the not power-off storage of computer memory.Aspect storage density, there is the limit in main flow storer at present on the technology node of nanometer more than 20, cannot be further compact integrated; And phase transition storage can reach 5 nanometer scale.Aspect storage speed, fast 100 times than flash memory of the phase change resistors of phase transition storage, also reach more than hundred times serviceable life.
As follow-on main flow storer, phase transition storage will have the feature of high speed, high density and low-power consumption, can set about from the aspect such as device architecture and performance improving.In order to reduce the power consumption of phase transition storage, conventional method is to dwindle the bottom electrode of phase change resistor in phase transition storage (Bottom Electrical Contact, BEC), to reduce the contact area between bottom electrode and phase-change material, thereby reduce the phase change region volume in phase-change material, and then reduce the required electric current of this phase change region generation phase transformation.Therefore, less phase change region volume can reduce the power consumption of phase transition storage.For the phase change resistor in phase transition storage, the device performance of bottom electrode determines whether bottom electrode can be reduced, to form less phase change region volume.And in the prior art, inventor finds that the device performance of bottom electrode tends to be subject to the layout density impact of phase transition storage, and become poor.Therefore, how by changing the layout density of phase transition storage, improving bottom electrode device performance, is urgent problem.
Summary of the invention
The shortcoming of prior art in view of the above, the purpose of this utility model is to provide a kind of phase transition storage, for solving the impact of prior art due to the layout density of phase transition storage, the poor problem of device performance of bottom electrode.
For achieving the above object and other relevant objects, the utility model provides a kind of phase transition storage, and wherein, described phase transition storage at least comprises: N phase-change memory cell, and wherein, N is natural number;
Described phase-change memory cell at least comprises: word line, bit line, and be positioned at the phase change resistor of described word line and described bit line infall, described phase change resistor along described bit line direction each side establish at least one dummy unit, to increase the layout density of described phase transition storage.
Preferably, described phase-change memory cell also comprises: the first oxide layer, is positioned at the second oxide layer in described the first oxide layer, and is positioned at the 3rd oxide layer in described the second oxide layer; Described phase change resistor at least comprises: be positioned at the bottom electrode of described the second oxide layer, be positioned at phase-change material and the top electrode of described the 3rd oxide layer; Wherein, described bottom electrode connects described phase-change material, and described phase-change material connects described top electrode.
Preferably, described dummy unit adopts the material identical with described bottom electrode, and itself and described bottom electrode are all positioned at described the second oxide layer.
Preferably, described bottom electrode adopts tungsten.
Preferably, described phase-change memory cell also comprises: gate tube, and be positioned at the first metal connecting line of described the first oxide layer, and the source of described gate tube or drain terminal are connected with described phase change resistor by described the first metal connecting line, and the grid end of described gate tube connects described word line.
Preferably, described phase-change memory cell also comprises: be positioned at the second metal connecting line of described the 3rd oxide layer, described top electrode is connected with described bit line by described the second metal connecting line.
The utility model also provides a kind of phase transition storage, and wherein, described phase transition storage at least comprises: N phase-change memory cell, and wherein, N is natural number;
Described phase-change memory cell at least comprises: word line, bit line, and be positioned at the phase change resistor of described word line and described bit line infall, described phase change resistor respectively along described bit line direction and along described word-line direction each side establish at least one dummy unit, to increase the layout density of described phase transition storage.
Preferably, described phase-change memory cell also comprises: the first oxide layer, is positioned at the second oxide layer in described the first oxide layer, and is positioned at the 3rd oxide layer in described the second oxide layer; Described phase change resistor at least comprises: be positioned at the bottom electrode of described the second oxide layer, be positioned at phase-change material and the top electrode of described the 3rd oxide layer; Wherein, described bottom electrode connects described phase-change material, and described phase-change material connects described top electrode.
Preferably, described dummy unit at least comprises: pseudo-phase change resistor; Wherein, described pseudo-phase change resistor adopts structure and the material identical with described phase change resistor.
Preferably, described dummy unit also comprises: dummy word line, be positioned at puppet first metal connecting line of described the first oxide layer, and be positioned at puppet second metal connecting line of described the 3rd oxide layer, described pseudo-phase change resistor is connected with described dummy word line by described pseudo-the first metal connecting line, and is connected with described bit line by described pseudo-the second metal connecting line.
Preferably, described dummy unit also comprises: pseudo-bit line, be positioned at puppet first metal connecting line of described the first oxide layer, and be positioned at puppet second metal connecting line of described the 3rd oxide layer, described pseudo-phase change resistor is connected with described word line by described pseudo-the first metal connecting line, and is connected with described pseudo-bit line by described pseudo-the second metal connecting line.
Preferably, described dummy unit also comprises: dummy word line, pseudo-bit line, be positioned at puppet first metal connecting line of described the first oxide layer, and be positioned at puppet second metal connecting line of described the 3rd oxide layer, described pseudo-phase change resistor is connected with described dummy word line by described pseudo-the first metal connecting line, and is connected with described pseudo-bit line by described pseudo-the second metal connecting line.
Preferably, described bottom electrode adopts tungsten.
Preferably, described phase-change memory cell also comprises: gate tube, and be positioned at the first metal connecting line of described the first oxide layer, and the source of described gate tube or drain terminal are connected with described phase change resistor by described the first metal connecting line, and the grid end of described gate tube connects described word line.
Preferably, described phase-change memory cell also comprises: be positioned at the second metal connecting line of described the 3rd oxide layer, described top electrode is connected with described bit line by described the second metal connecting line.
As mentioned above, phase transition storage of the present utility model, there is following beneficial effect: the utility model arranges dummy unit by near at phase change resistor, increase the layout density of phase transition storage, and this dummy unit is because not conducting phase change region produces the required electric current of phase transformation, can not affect other device performance, thereby the device performance of bottom electrode is improved; The utility model has improved the device performance of bottom electrode effectively, thereby can be by dwindling the method for bottom electrode, reduce the contact area between bottom electrode and phase-change material, thereby reduce phase change region volume, and then reduce the required electric current of this phase change region generation phase transformation, thereby reduce the power consumption of phase transition storage.
Brief description of the drawings
Fig. 1 is shown as the different bottom electrode sizes that obtain after tungsten grinding in the utility model prior art at different F
2electron-microscope scanning figure in chip area.
Fig. 2 is shown as the phase-change memory cell of the utility model the first embodiment phase transition storage along the sectional view of bit line direction.
Fig. 3 is shown as the phase-change memory cell of the utility model the first embodiment phase transition storage along the sectional view of word-line direction.
The circuit theory diagrams of the phase-change memory cell that Fig. 4 is shown as the utility model the first embodiment phase transition storage based on 1T1R structure.
Fig. 5 is shown as the phase-change memory cell of the utility model the second embodiment phase transition storage along the sectional view of word-line direction.
Fig. 6 is shown as three kinds of dummy unit structural representations in the phase-change memory cell of the utility model the second embodiment phase transition storage.
Element numbers explanation
1 phase change resistor
11 bottom electrodes
12 phase-change materials
13 top electrodes
2 dummy units
21 the first dummy unit structures
22 the second dummy unit structures
23 the third dummy unit structures
3 first metal connecting lines
4 second metal connecting lines
5 bit lines
6 word lines
100 substrates
101 shallow trench isolation
200 N+ source/leakage doped layers
201 grid layers
300 first oxide layers
400 second oxide layers
500 the 3rd oxide layers
Embodiment
By particular specific embodiment, embodiment of the present utility model is described below, person skilled in the art scholar can understand other advantages of the present utility model and effect easily by the disclosed content of this instructions.
The phase-change memory cell of existing phase transition storage, mainly based on 1T1R structure, by a gate tube (1T), adds a phase change resistor (1R) composition.Wherein, phase change resistor, mainly by bottom electrode, is positioned at the phase-change material on bottom electrode and is positioned at the top electrode composition on phase-change material.Conventionally, bottom electrode adopts tungsten grinding (W-CMP) to obtain.Inventor found through experiments, and the layout density of phase transition storage is the key factor that affects its bottom electrode device performance, and the device performance quality of bottom electrode depends primarily on the height of the layout density of phase transition storage.
Specifically, be illustrated in figure 1 the different bottom electrode sizes that obtain after tungsten grinds at different F
2electron-microscope scanning figure in chip area.In figure, horizontal ordinate is F
2chip area, comprises 15F
2, 20F
2, 40F
2, 50F
2, 100F
2and 300F
2chip area, ordinate is bottom electrode size; Four lines electron-microscope scanning figure is to four kinds of CD (Critical Dimension, critical size) bottom electrode carry out electron-microscope scanning and obtain, the first bottom electrode CD is standard CD, the second bottom electrode CD increases by 8% on the basis of standard CD, the third bottom electrode CD increases by 16%, the four kind of bottom electrode CD to increase by 24% on the basis of standard CD on the basis of standard CD.In the time that bottom electrode is measure-alike, F
2chip area is larger, or at F
2when chip area is identical, bottom electrode size is less, shows that the layout density of phase transition storage is lower; Otherwise, in the time that bottom electrode is measure-alike, F
2chip area is less, or at F
2when chip area is identical, bottom electrode size is larger, shows that the layout density of phase transition storage is higher.In Fig. 1, two row layout densities higher bottom electrode in the left side is all by test, and four row layout densities lower bottom electrode in the right all lost efficacy, this is because bottom electrode may be subject to chemical substance corrosion in the time that tungsten grinds, thereby causes bottom electrode device performance to lose efficacy; In the time that bottom electrode is measure-alike, F
2chip area is larger, and the chemical substance corrosion that bottom electrode is subject in the time that tungsten grinds is just more serious.Hence one can see that, and the layout density of phase transition storage is higher, and the corrosion resistivity of bottom electrode in tungsten grinding technics is just better, and the device performance of bottom electrode is also better.In addition, the size of bottom electrode CD is also a factor that affects bottom electrode device performance, and inventor found through experiments, and bottom electrode CD is larger, and the corrosion resistivity of bottom electrode in tungsten grinding technics is just better.But although the size of bottom electrode CD can affect the corrosion resistivity of bottom electrode in tungsten grinding technics, as seen in Figure 1, the corrosion resistivity impact on bottom electrode in tungsten grinding technics is larger, or the height of the layout density of phase transition storage.In Fig. 1, for same a line electron-microscope scanning figure, the size of bottom electrode CD is identical, and the layout density of phase transition storage is higher, and the corrosion resistivity of bottom electrode in tungsten grinding technics is just better; The layout density of phase transition storage is lower, and the corrosion resistivity of bottom electrode in tungsten grinding technics is just poorer.For same row electron-microscope scanning figure, the no matter size of bottom electrode CD, the layout density of phase transition storage is higher, and the corrosion resistivity of bottom electrode in tungsten grinding technics is just better; The layout density of phase transition storage is lower, and the corrosion resistivity of bottom electrode in tungsten grinding technics is just poorer.That is to say, the height of the layout density of phase transition storage is the principal element that affects bottom electrode device performance, and the size of bottom electrode CD just affects the secondary cause of bottom electrode device performance.
As can be seen here, the layout density of phase transition storage is the key factor that affects bottom electrode device performance, and the device performance quality of bottom electrode depends primarily on the height of the layout density of phase transition storage.But in order not affect the performance of other devices in phase transition storage, in prior art, the layout density of phase transition storage is often lower, and this will affect the device performance of bottom electrode.
Therefore, not affecting under the prerequisite of other device performance, adopting suitable layout design to improve layout density, is the important means of improving bottom electrode device performance, thereby can effectively avoid bottom electrode to corrode owing to being subject to chemical substance in the time that tungsten grinds, the defect that causes its device performance to lose efficacy.
Refer to Fig. 2 to Fig. 5.Notice, appended graphic the illustrated structure of this instructions, ratio, size etc., all contents in order to coordinate instructions to disclose only, understand and read for person skilled in the art scholar, not in order to limit the enforceable qualifications of the utility model, therefore the not technical essential meaning of tool, the adjustment of the modification of any structure, the change of proportionate relationship or size, do not affecting under effect that the utility model can produce and the object that can reach, all should still drop on the technology contents that the utility model discloses and obtain in the scope that can contain.Simultaneously, in this instructions, quote as " on ", the term of D score, " left side ", " right side ", " centre " and " " etc., also only for ease of understanding of narrating, but not in order to limit the enforceable scope of the utility model, the change of its relativeness or adjustment, changing under technology contents, when being also considered as the enforceable category of the utility model without essence.
The utility model the first embodiment relates to a kind of phase transition storage, and wherein, phase transition storage at least comprises: N phase-change memory cell, wherein, N is natural number.
As shown in Figures 2 and 3, phase-change memory cell at least comprises: word line 6, and bit line 5, and be positioned at the phase change resistor 1 of word line 6 and bit line 5 infalls, phase change resistor 1 along bit line 5 directions each side establish at least one dummy unit 2, to increase the layout density of phase transition storage.
Word line 6 and bit line 5, all by metal level etching technics, carry out forming after dry etching to metal level, and this metal level is generally aluminum or aluminum alloy.Certainly, word line 6 and bit line 5 also can be selected to adopt other smithcrafts to be made, so metal level also can aluminium, copper or X alloy.
Under normal circumstances, if phase transition storage is designed to have the memory data output of 1Mb, phase transition storage just comprises N=1024*1024 phase-change memory cell so, and phase transition storage comprises 1024 row and 1024 row phase-change memory cells.1024 row phase-change memory cells are by 1024 word line (WL, Word Line) control gating, 1024 row phase-change memory cells and 1024 bit line (BL, Bit Line) be connected, word line is arranged in a crossed manner with bit line but do not contact, and phase change resistor is arranged in the space of word line and bit line infall.In the time that a word line is activated, 1024 phase-change memory cells are simultaneously selected.
In the present embodiment, phase-change memory cell also comprises: the first oxide layer 300, is positioned at the second oxide layer 400 in the first oxide layer 300, and is positioned at the 3rd oxide layer 500 in the second oxide layer 400; Phase change resistor 1 at least comprises: be positioned at the bottom electrode 11 of the second oxide layer 400, be positioned at phase-change material 12 and the top electrode 13 of the 3rd oxide layer 500; Wherein, bottom electrode 11 connects phase-change material 12, and phase-change material 12 connects top electrode 13.
Phase-change material 12 adopts sulphur based semiconductor compound, as GST (Ge
2sb
2te
5) etc. there is crystalline state and amorphous material.
In the present embodiment, dummy unit 2 adopts the material identical with bottom electrode 11, and both all adopt tungsten, and both are all positioned at the second oxide layer 400.In the time carrying out tungsten grinding, due to the existence of dummy unit 2, the layout density of phase transition storage is increased, thereby the degree that makes bottom electrode be subject to chemical substance corrosion in the time that tungsten grinds diminishes, and even disappears, and has avoided bottom electrode device performance to lose efficacy.
Because dummy unit 2 not conductings produce the required electric current of phase transformation, can not affect other device performance, can make the device performance of bottom electrode 11 be improved.Therefore, the phase transition storage of the present embodiment can, by dwindling the method for bottom electrode, reduce the contact area between bottom electrode and phase-change material, thereby reduces phase change region volume, and then reduce the required electric current of this phase change region generation phase transformation, thereby reduce the power consumption of phase transition storage.
In addition, dummy unit 2 quantity that adopt can be standard CD according to actual measurement CD time are set dummy unit 2 quantity in the present embodiment, ensure that bottom electrode is not subject to the corrosion of chemical substance in the time that tungsten grinds, thereby by test, ensure product yield, use minimum dummy unit 2 quantity simultaneously, saved material.
In addition, in the present embodiment, phase-change memory cell also comprises: gate tube, and be positioned at the first metal connecting line 3 of the first oxide layer 300.Certainly, phase transition storage also comprises substrate 100 and is positioned at N+ source/leakage doped layer 200 and the grid layer 201 on substrate, and the word line 6 that metal level forms is positioned at the upper surface of N+ source/leakage doped layer 200 and grid layer 201, and the first oxide layer is positioned on word line 6 and grid layer 201.Gate tube is exactly to be made up of N+ source/leakage doped layer 200 and grid layer 201, and gate tube is being equipped with shallow trench isolation from (STI, Shallow Trench Isolation) 101 along the left and right sides of word line 6 directions.Source or drain terminal that N+ source/leakage doped layer 200 is gate tube, the grid end that grid layer 201 is gate tube, the source of gate tube or drain terminal are connected with the bottom electrode 11 of phase change resistor 1 by the first metal connecting line 3, the grid end connective word line 6 of gate tube.The phase transition storage of the present embodiment also comprises: be positioned at the second metal connecting line 4 of the 3rd oxide layer 500, the top electrode 13 of phase change resistor 1 is connected with bit line 5 by the second metal connecting line 4.The first metal connecting line 3 and the second metal connecting line 4 all can adopt tungsten, aluminium or copper.
Fig. 4 is the phase-change memory cell of the present embodiment phase transition storage circuit theory diagrams based on 1T1R structure, by a gate tube (1T), adds a phase change resistor (1R) composition.In figure, phase change resistor R0 one end connects bit line BL, the other end connects the source (or drain terminal) of gate tube NM1, and the drain terminal (or source) of gate tube NM1 connects source line SL (Source Line), the grid end connective word line WL of gate tube NM1.Gate tube NM1 is NMOS pipe or PMOS pipe, and preferably, the gate tube NM1 of the present embodiment is NMOS pipe.
As shown in Figure 5, the utility model the second embodiment relates to a kind of phase transition storage, and wherein, the phase transition storage of the present embodiment is roughly similar to the first embodiment, equally at least comprises: N phase-change memory cell, wherein, N is natural number.Phase-change memory cell at least comprises: word line 6, and bit line 5, and be positioned at the phase change resistor 1 of word line 6 and bit line 5 infalls; Word line 6 and bit line 5, all by metal level etching technics, carry out forming after dry etching to metal level, and this metal level is generally aluminum or aluminum alloy.Certainly, word line 6 and bit line 5 also can be selected to adopt other smithcrafts to be made, so metal level also can aluminium, copper or X alloy.
In addition, the phase transition storage of the present embodiment also has and the first embodiment something in common, as, phase transition storage also comprises: the first oxide layer 300, be positioned at the second oxide layer 400 in the first oxide layer 300, and be positioned at the 3rd oxide layer 500 in the second oxide layer 400; Phase change resistor 1 at least comprises: be positioned at the bottom electrode 11 of the second oxide layer 400, be positioned at phase-change material 12 and the top electrode 13 of the 3rd oxide layer 500; Wherein, bottom electrode 11 connects phase-change material 12, and phase-change material 12 connects top electrode 13.Bottom electrode 11 adopts tungsten.Phase-change material 12 adopts sulphur based semiconductor compound, as GST (Ge
2sb
2te
5) etc. there is crystalline state and amorphous material.
For another example, phase transition storage also comprises: gate tube, and be positioned at the first metal connecting line 3 of the first oxide layer 300.Certainly, phase transition storage also comprises substrate 100 and is positioned at N+ source/leakage doped layer 200 and the grid layer 201 on substrate, and the word line 6 that metal level forms is positioned at the upper surface of N+ source/leakage doped layer 200 and grid layer 201, and the first oxide layer is positioned on word line 6 and grid layer 201.Gate tube is exactly to be made up of N+ source/leakage doped layer 200 and grid layer 201, and gate tube is being equipped with shallow trench isolation from (STI, Shallow Trench Isolation) 101 along the left and right sides of word line 6 directions.Source or drain terminal that N+ source/leakage doped layer 200 is gate tube, the grid end that grid layer 201 is gate tube, the source of gate tube or drain terminal are connected with the bottom electrode 11 of phase change resistor 1 by the first metal connecting line 3, the grid end connective word line 6 of gate tube.The phase transition storage of the present embodiment also comprises: be positioned at the second metal connecting line 4 of the 3rd oxide layer 500, the top electrode 13 of phase change resistor 1 is connected with bit line 5 by the second metal connecting line 4.The first metal connecting line 3 and the second metal connecting line 4 all can adopt tungsten, aluminium or copper.
The phase-change memory cell of the present embodiment phase transition storage, equally based on 1T1R structure, by a gate tube (1T), adds a phase change resistor (1R) composition.Fig. 4 is the phase-change memory cell of the present embodiment phase transition storage circuit theory diagrams based on 1T1R structure too, phase change resistor R0 one end connects bit line BL, the other end connects the source (or drain terminal) of gate tube NM1, the drain terminal (or source) of gate tube NM1 connects source line SL (Source Line), the grid end connective word line WL of gate tube NM1.The gate tube NM1 of the present embodiment is NMOS pipe.
The difference of the phase transition storage of the present embodiment and the first embodiment is, the phase change resistor 1 in the present embodiment respectively along bit line 5 directions and along word line 6 directions each side establish at least one dummy unit 2, to increase the layout density of phase transition storage.
Dummy unit 2 at least comprises: pseudo-phase change resistor; Wherein, pseudo-phase change resistor adopts structure and the material identical with phase change resistor 1.That is to say, pseudo-phase change resistor comprises too: be positioned at the bottom electrode of the second oxide layer 400, be positioned at phase-change material and the top electrode of the 3rd oxide layer 500; Wherein, bottom electrode connects phase-change material, and phase-change material connects top electrode.Phase-change material adopts GST material, as Ge
2sb
2te
5deng thering is crystalline state and amorphous material.
Refer to Fig. 6, because the dummy unit 2 in the present embodiment is positioned at along bit line 5 directions with along the left and right sides of word line 6 directions, dummy unit is respectively established at least one in these four positions, can be also two, three, even more, therefore dummy unit 2 comprises following three kinds of structures.
Except comprising pseudo-phase change resistor 2, the first dummy unit structure 21 also comprises: dummy word line (Dummy WL), be positioned at puppet first metal connecting line of the first oxide layer 300, and be positioned at puppet second metal connecting line of the 3rd oxide layer 500, pseudo-phase change resistor is connected with dummy word line by pseudo-the first metal connecting line, and is connected with bit line BL by pseudo-the second metal connecting line.
Except comprising pseudo-phase change resistor 2, the second dummy unit structure 22 also comprises: pseudo-bit line (Dummy BL), be positioned at puppet first metal connecting line of the first oxide layer 300, and be positioned at puppet second metal connecting line of the 3rd oxide layer 500, pseudo-phase change resistor is connected with word line WL by pseudo-the first metal connecting line, and is connected with pseudo-bit line by pseudo-the second metal connecting line.
Except comprising pseudo-phase change resistor 2, the third dummy unit structure 23 also comprises: dummy word line, pseudo-bit line, be positioned at puppet first metal connecting line of the first oxide layer 300, and be positioned at puppet second metal connecting line of the 3rd oxide layer 500, pseudo-phase change resistor is connected with dummy word line by pseudo-the first metal connecting line, and is connected with pseudo-bit line by pseudo-the second metal connecting line.
Wherein, pseudo-the first metal connecting line adopts identical metal material with the first metal connecting line 3, and pseudo-the second metal connecting line adopts identical metal material with the second metal connecting line 4.
In the present embodiment, dummy unit 2 may have above three kinds of structures.In the time carrying out tungsten grinding, due to the existence of dummy unit 2, the layout density of phase transition storage is increased, thereby the degree that makes bottom electrode be subject to chemical substance corrosion in the time that tungsten grinds diminishes, and even disappears, and has avoided bottom electrode device performance to lose efficacy.
Because dummy unit 2 not conductings produce the required electric current of phase transformation, can not affect other device performance, thereby the device performance of bottom electrode 11 is improved, therefore, the phase transition storage of the present embodiment can, by dwindling the method for bottom electrode, reduce the contact area between bottom electrode and phase-change material, thereby reduces phase change region volume, and then reduce the required electric current of this phase change region generation phase transformation, thereby reduce the power consumption of phase transition storage.
In addition, dummy unit 2 quantity that adopt can be standard CD according to actual measurement CD time are set dummy unit 2 quantity in the present embodiment, ensure that bottom electrode is not subject to the corrosion of chemical substance in the time that tungsten grinds, thereby by test, ensure product yield, use minimum dummy unit 2 quantity simultaneously, saved material.
To sum up, the utility model arranges dummy unit by near at phase change resistor, has increased the layout density of phase transition storage, and this dummy unit is because not conducting phase change region produces the required electric current of phase transformation, can not affect other device performance, thereby the device performance of bottom electrode is improved; The utility model has improved the device performance of bottom electrode effectively, thereby can be by dwindling the method for bottom electrode, reduce the contact area between bottom electrode and phase-change material, thereby reduce phase change region volume, and then reduce the required electric current of this phase change region generation phase transformation, thereby reduce the power consumption of phase transition storage.So the utility model has effectively overcome various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present utility model and effect thereof only, but not for limiting the utility model.Any person skilled in the art scholar all can, under spirit of the present utility model and category, modify or change above-described embodiment.Therefore, have in technical field under such as and conventionally know that the knowledgeable modifies or changes not departing from all equivalences that complete under spirit that the utility model discloses and technological thought, must be contained by claim of the present utility model.
Claims (15)
1. a phase transition storage, is characterized in that, described phase transition storage at least comprises: N phase-change memory cell, and wherein, N is natural number;
Described phase-change memory cell at least comprises: word line, bit line, and be positioned at the phase change resistor of described word line and described bit line infall, described phase change resistor along described bit line direction each side establish at least one dummy unit, to increase the layout density of described phase transition storage.
2. phase transition storage according to claim 1, is characterized in that, described phase-change memory cell also comprises: the first oxide layer, is positioned at the second oxide layer in described the first oxide layer, and is positioned at the 3rd oxide layer in described the second oxide layer; Described phase change resistor at least comprises: be positioned at the bottom electrode of described the second oxide layer, be positioned at phase-change material and the top electrode of described the 3rd oxide layer; Wherein, described bottom electrode connects described phase-change material, and described phase-change material connects described top electrode.
3. phase transition storage according to claim 2, is characterized in that, described dummy unit adopts the material identical with described bottom electrode, and itself and described bottom electrode are all positioned at described the second oxide layer.
4. according to the phase transition storage described in claim 2 or 3, it is characterized in that, described bottom electrode adopts tungsten.
5. according to the phase transition storage described in claim 2 or 3, it is characterized in that, described phase-change memory cell also comprises: gate tube, and be positioned at the first metal connecting line of described the first oxide layer, the source of described gate tube or drain terminal are connected with described phase change resistor by described the first metal connecting line, and the grid end of described gate tube connects described word line.
6. according to the phase transition storage described in claim 2 or 3, it is characterized in that, described phase-change memory cell also comprises: be positioned at the second metal connecting line of described the 3rd oxide layer, described top electrode is connected with described bit line by described the second metal connecting line.
7. a phase transition storage, is characterized in that, described phase transition storage at least comprises: N phase-change memory cell, and wherein, N is natural number;
Described phase-change memory cell at least comprises: word line, bit line, and be positioned at the phase change resistor of described word line and described bit line infall, described phase change resistor respectively along described bit line direction and along described word-line direction each side establish at least one dummy unit, to increase the layout density of described phase transition storage.
8. phase transition storage according to claim 7, is characterized in that, described phase-change memory cell also comprises: the first oxide layer, is positioned at the second oxide layer in described the first oxide layer, and is positioned at the 3rd oxide layer in described the second oxide layer; Described phase change resistor at least comprises: be positioned at the bottom electrode of described the second oxide layer, be positioned at phase-change material and the top electrode of described the 3rd oxide layer; Wherein, described bottom electrode connects described phase-change material, and described phase-change material connects described top electrode.
9. phase transition storage according to claim 8, is characterized in that, described dummy unit at least comprises: pseudo-phase change resistor; Wherein, described pseudo-phase change resistor adopts structure and the material identical with described phase change resistor.
10. phase transition storage according to claim 9, it is characterized in that, described dummy unit also comprises: dummy word line, be positioned at puppet first metal connecting line of described the first oxide layer, and be positioned at puppet second metal connecting line of described the 3rd oxide layer, described pseudo-phase change resistor is connected with described dummy word line by described pseudo-the first metal connecting line, and is connected with described bit line by described pseudo-the second metal connecting line.
11. phase transition storages according to claim 9, it is characterized in that, described dummy unit also comprises: pseudo-bit line, be positioned at puppet first metal connecting line of described the first oxide layer, and be positioned at puppet second metal connecting line of described the 3rd oxide layer, described pseudo-phase change resistor is connected with described word line by described pseudo-the first metal connecting line, and is connected with described pseudo-bit line by described pseudo-the second metal connecting line.
12. phase transition storages according to claim 9, it is characterized in that, described dummy unit also comprises: dummy word line, pseudo-bit line, be positioned at puppet first metal connecting line of described the first oxide layer, and being positioned at puppet second metal connecting line of described the 3rd oxide layer, described pseudo-phase change resistor is connected with described dummy word line by described pseudo-the first metal connecting line, and passes through described pseudo-the second metal connecting line and be connected with described pseudo-bit line.
Phase transition storage described in 13. according to Claim 8-12 any one, is characterized in that, described bottom electrode adopts tungsten.
Phase transition storage described in 14. according to Claim 8-12 any one, it is characterized in that, described phase-change memory cell also comprises: gate tube, and be positioned at the first metal connecting line of described the first oxide layer, the source of described gate tube or drain terminal are connected with described phase change resistor by described the first metal connecting line, and the grid end of described gate tube connects described word line.
Phase transition storage described in 15. according to Claim 8-12 any one, is characterized in that, described phase-change memory cell also comprises: be positioned at the second metal connecting line of described the 3rd oxide layer, described top electrode is connected with described bit line by described the second metal connecting line.
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| CN105280815A (en) * | 2015-09-28 | 2016-01-27 | 中国科学院上海微系统与信息技术研究所 | Phase change random access memory (PCRAM) detection structure and preparation method therefor |
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| CN105280815A (en) * | 2015-09-28 | 2016-01-27 | 中国科学院上海微系统与信息技术研究所 | Phase change random access memory (PCRAM) detection structure and preparation method therefor |
| CN105280815B (en) * | 2015-09-28 | 2018-09-25 | 中国科学院上海微系统与信息技术研究所 | Phase transition storage detection structure and preparation method thereof |
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