CN203997450U - Magnetic-control sputtering ring package - Google Patents
Magnetic-control sputtering ring package Download PDFInfo
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- CN203997450U CN203997450U CN201420448664.XU CN201420448664U CN203997450U CN 203997450 U CN203997450 U CN 203997450U CN 201420448664 U CN201420448664 U CN 201420448664U CN 203997450 U CN203997450 U CN 203997450U
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- Prior art keywords
- magnetic
- control sputtering
- sputtering ring
- rete
- package
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- Expired - Lifetime
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 164
- 241000555293 Bassariscus astutus Species 0.000 claims abstract description 43
- 238000012856 packing Methods 0.000 claims abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000012546 transfer Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000002985 plastic film Substances 0.000 description 6
- 229920006255 plastic film Polymers 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000000803 paradoxical effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
A kind of magnetic-control sputtering ring package, be used for packing described magnetic-control sputtering ring, described magnetic-control sputtering ring comprises magnetic-control sputtering ring head end and magnetic-control sputtering ring tail end, and described magnetic-control sputtering ring head end and magnetic-control sputtering ring tail end form opening, comprising: the first rete of coated described magnetic-control sputtering ring; The first port guard member, coated the first rete and the magnetic-control sputtering ring head end that is positioned at magnetic-control sputtering ring head end; The second port protection part, coated the first rete and the magnetic-control sputtering ring tail end that is positioned at magnetic-control sputtering ring tail end.Adopt magnetic-control sputtering ring package of the present utility model to protect at interior magnetic-control sputtering ring by actv..
Description
Technical field
The utility model relates to semiconductor applications, relates in particular to a kind of magnetic-control sputtering ring package.
Background technology
Physical vapor deposition (PVD) (PVD, Physical Vapor Deposition) be that electronics accelerates to fly in the process of substrate and bumps with ar atmo under the effect of electric field, ionize out a large amount of argon ions and electronics, electronics flies to substrate, argon ion accelerates the target on bombardment sputter base station under the effect of electric field, sputter a large amount of target atom, be neutral target atom (or molecule) and be deposited on film forming on substrate, and finally reach the object to substrate surface plated film.
Fig. 1 is the sputterer of applying magnetic-control sputtering ring in physical vapor deposition (PVD).Please refer to Fig. 1, this magnetron sputter reactor comprises the chamber 112 with sidewall 114, and normally high vacuum chamber of chamber 112, is substantially cylindrical shape.Target 100 is arranged in the upper area of chamber 112, and substrate 118 is arranged in the lower area of chamber 112.Substrate 118 is maintained on pedestal 120, and pedestal 120 arranges and relative with target 100 along the central axis TT of cylinder side wall, and described pedestal 120 generally includes electrostatic chuck.Target 100 is kept the supporting member (not shown) by suitable, and described supporting member can comprise propulsion source.Upper lid (not shown) can be set to cover the edge of target 100.The material of target 100 can comprise one or more in for example aluminium, cadmium, cobalt, copper, gold, indium, molybdenum, nickel, niobium, palladium, platinum, rhenium, ruthenium, silver, tin, tantalum, titanium, tungsten, vanadium and zinc.These elements can exist with the form of element, compound or alloy.
Substrate 118 can comprise semiconductor wafer, for example silicon single crystal wafer.
Sputter material sputters out and is directed to substrate 118 from the surface of target 100.Sputter material 122 is represented by arrow.Under normal circumstances, magnetic-control sputtering ring 200 is arranged in chamber 112, is arranged between target 100 and substrate 118.The electric field that is applied to the electric current generation on magnetic-control sputtering ring 200 improves the orientation of sputter material 122 by affecting the magnetic field of whole sputtering chamber, and guiding sputter material is relative orthogonal with the upper surface of substrate 118, to improve film forming homogeneity in sputter procedure.
With reference to figure 2, the interior ring surface of magnetic-control sputtering ring 200 and outer ring surface have decorative pattern.Magnetic-control sputtering ring 200 comprises magnetic-control sputtering ring head end 201 and magnetic-control sputtering ring tail end 202, between magnetic-control sputtering ring head end 201 and magnetic-control sputtering ring tail end 202, forms opening 203.In prior art, with reference to figure 3, in the time that magnetic-control sputtering ring 200 needs storage or transport, need on magnetic-control sputtering ring 200, be coated one deck plastic film 204.This plastic film 204 is magnetic-control sputtering ring package, and the decorative pattern of the protection interior ring surface of magnetic-control sputtering ring 200 and outer ring surface is injury-free in storage or transportation.In this plastic film 204, be vacuum seal condition, can extend the storage life of magnetic-control sputtering ring 200.
But, the protection poor effect of the magnetic-control sputtering ring package of employing prior art to magnetic-control sputtering ring.
Utility model content
The problem that the utility model solves is to adopt the magnetic-control sputtering ring package of the prior art protection poor effect to magnetic-control sputtering ring.
For addressing the above problem, the utility model provides a kind of magnetic-control sputtering ring package, and described magnetic-control sputtering ring comprises magnetic-control sputtering ring head end and magnetic-control sputtering ring tail end, and described magnetic-control sputtering ring head end and magnetic-control sputtering ring tail end form opening, comprising:
The first rete of coated described magnetic-control sputtering ring;
The first port guard member, coated the first rete and the magnetic-control sputtering ring head end that is positioned at magnetic-control sputtering ring head end;
The second port protection part, coated the first rete and the magnetic-control sputtering ring tail end that is positioned at magnetic-control sputtering ring tail end.
Optionally, described the first port guard member and the second port protection part are one-body molded.
Optionally, described the first port guard member is connected with the second port protection part.
Optionally, in described the first port guard member, have the first groove, the first rete and the magnetic-control sputtering ring head end that are positioned at magnetic-control sputtering ring head end insert described the first groove.
Optionally, in described the second port protection part, have the second groove, the first rete and the magnetic-control sputtering ring tail end that are positioned at magnetic-control sputtering ring tail end insert described the second groove.
Optionally, described magnetic-control sputtering ring also comprises: the second rete of coated described the first rete, the first port guard member and the second port protection part.
Optionally, the oxygen transit dose of described the first rete and the second rete is less than or equal to 5ml/m
224hrMPa, vapor transfer rate is less than or equal to 3ml/m
224hr.
Optionally, the thickness of described the first rete and the second rete is more than or equal to 90 μ m, and density is more than or equal to 0.960g/cm
3.
Optionally, the pulling strengrth of described the first rete and the second rete is more than or equal to 100N/15mm, anti-puncture intensity and is more than or equal to 10N.
Optionally, described magnetic-control sputtering ring package is vacuum sealed package part.
Compared with prior art, the technical solution of the utility model has the following advantages:
The first port guard member is coated to be positioned at the first rete and the magnetic-control sputtering ring head end of magnetic-control sputtering ring head end and to protect magnetic-control sputtering ring head end.The second port protection part is coated to be positioned at the first rete and the magnetic-control sputtering ring tail end of magnetic-control sputtering ring tail end and to protect magnetic-control sputtering ring tail end.Even in the process of transport or storage; the first port guard member and the second port protection part phase mutual friction; collision even mutually; can not see through the first rete and produce cut at magnetic-control sputtering ring head end yet; can not see through the first rete simultaneously and produce cut on magnetic-control sputtering ring tail end surface yet, thus can actv. protection magnetic-control sputtering ring.When this magnetic-control sputtering ring carries out magnetron sputtering, can not produce paradoxical discharge phenomenon yet.
Brief description of the drawings
Fig. 1 is the sputterer of applying magnetic-control sputtering ring in prior art in physical vapor deposition (PVD);
Fig. 2 is the perspective view of magnetic-control sputtering ring;
Perspective view when Fig. 3 is the magnetic-control sputtering ring of magnetic-control sputtering ring pack package Fig. 2 of prior art;
Perspective view when Fig. 4 is magnetic-control sputtering ring pack package magnetic-control sputtering ring of the present utility model;
Fig. 5 is the perspective view of the first port guard member of the present utility model and the second port protection part.
Detailed description of the invention
Through finding and research, the reason of the protection poor effect of the magnetic-control sputtering ring package of employing prior art to magnetic-control sputtering ring 200 is as follows:
With reference to figure 3, in storage or transportation, magnetic-control sputtering ring head end 201 and magnetic-control sputtering ring tail end 202 easily bump or rub, even if magnetic-control sputtering ring 200 surfaces have plastic film 204 coated, these collisions or friction also can make magnetic-control sputtering ring head end 201 surfaces and magnetic-control sputtering ring tail end 202 surfaces produce cut.In the time thering is the magnetic-control sputtering ring 200 of cut and be applied to magnetron sputtering, can there is paradoxical discharge phenomenon, thereby affect sputter environment, and then the quality of forming film of impact on substrate.
In prior art, in order to prevent producing cut on magnetic-control sputtering ring head end 201 surfaces and magnetic-control sputtering ring tail end 202 surfaces, can take the measures such as the number of plies that increases the thickness of plastic film 204 or can increase plastic film 204 to prevent that cut phenomenon from producing, but the scratch poor effect of above-mentioned measure.
For above technical matters, the utility model provides a kind of magnetic-control sputtering ring package.This magnetic-control sputtering ring package comprises the first rete of coated described magnetic-control sputtering ring; The first port guard member, coated the first rete and the magnetic-control sputtering ring head end that is positioned at magnetic-control sputtering ring head end; The second port protection part, coated the first rete and the magnetic-control sputtering ring tail end that is positioned at magnetic-control sputtering ring tail end.Adopt magnetic-control sputtering ring package of the present utility model to protect magnetic-control sputtering ring by actv..
For above-mentioned purpose of the present utility model, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, specific embodiment of the utility model is described in detail.
With reference to figure 4, in the present embodiment, magnetic-control sputtering ring 3 has magnetic-control sputtering ring head end 31 and magnetic-control sputtering ring tail end 32, and magnetic-control sputtering ring head end 31 and magnetic-control sputtering ring tail end 32 form opening (not shown).Comprise for the magnetic-control sputtering ring package of packing magnetic-control sputtering ring 3:
The first rete 4 of coated described magnetic-control sputtering ring 3;
The first port guard member 51, coated the first rete 4 and the magnetic-control sputtering ring head end 31 that is positioned at magnetic-control sputtering ring head end 31;
The second port protection part 52, coated the first rete 4 and the magnetic-control sputtering ring tail end 32 that is positioned at magnetic-control sputtering ring tail end 32.
The first port guard member 51 is coated and is positioned at the first rete 4 and the magnetic-control sputtering ring head end 31 of magnetic-control sputtering ring head end 31 and protects magnetic-control sputtering ring head end 31.The second port protection part 52 is coated and is positioned at the first rete 4 and the magnetic-control sputtering ring tail end 32 of magnetic-control sputtering ring tail end 32 and protects magnetic-control sputtering ring tail end 32.Even in the process of transport or storage; the first port guard member 51 and the second port protection part 52 phase mutual friction; collision even mutually; can not see through the first rete 4 and produce cut at magnetic-control sputtering ring head end 31 yet; can not see through the first rete 4 simultaneously and produce cut on magnetic-control sputtering ring tail end 32 surfaces yet, thus can actv. protection magnetic-control sputtering ring 3.When this magnetic-control sputtering ring 3 carries out magnetron sputtering, can not produce paradoxical discharge phenomenon yet.
In the present embodiment, continuing is strip shape bag shaped structure with reference to figure 4, the first retes 4, comprises that the first rete head end 41 and the first rete tail end 42, the first rete head ends 41 are the sack of strip shape bag shaped structure.Magnetic-control sputtering ring tail end 32 enters strip shape bag shaped structure from the first rete head end 41, until magnetic-control sputtering ring tail end 32 and the first rete tail end 42 fit.Now, magnetic-control sputtering ring head end 31 and the first rete head end 41 fit, and the first rete head end 41 is sealed.The not coated interior ring of magnetic-control sputtering ring 3 of the first rete 4 is with interior place.
In other embodiment, the first rete can also be square bag structure or circular bag structure.In the time that magnetic-control sputtering ring packs the first rete into, in magnetic-control sputtering ring, ring is all included in the first rete with interior place.
In the present embodiment, the oxygen transit dose of the first rete 4 is less than or equal to 5ml/m
224hrMPa, vapor transfer rate are less than or equal to 3ml/m
224hr.
The implication of oxygen transit dose be steady temperature and unit pressure poor under, in the time of stable seeing through, in the unit time, see through the volume of the oxygen of the unit area of the first rete.The oxygen transit dose of the first rete 4 is less, and the holding time of the magnetic-control sputtering ring 3 in the first rete 4 can be more of a specified duration.
The implication of vapor transfer rate be steady temperature and water vapour pressure poor under, in the time of stable seeing through, in the unit time, see through the volume of the aqueous vapor of the unit area of the first rete 4.The vapor transfer rate of the first rete 4 is less, and the holding time of the magnetic-control sputtering ring 3 in the first rete 4 can be more of a specified duration.
In order better to protect the inside face of magnetic-control sputtering ring 3 and the decorative pattern of outside face in the first rete 4, need the thickness of the first rete 4 to be more than or equal to 90 μ m, density is more than or equal to 0.960g/cm
3, the pulling strengrth of the first rete 4 is more than or equal to 100N/15mm, anti-puncture intensity and is more than or equal to 10N.
Continue with reference to figure 4, magnetic-control sputtering ring package also comprises the first port guard member 51.Coated the first rete 4 and the magnetic-control sputtering ring head end 31 that is positioned at magnetic-control sputtering ring head end 31 of the first port guard member 51.
In the present embodiment, in conjunction with reference to figure 4 and Fig. 5, have the first groove 511 in the first port guard member 51, cover has the first rete head end 41 of magnetic-control sputtering ring head end 31 to insert together with magnetic-control sputtering ring head end 31 in the first groove 511.And magnetic-control sputtering ring head end 31 and the first rete head end 41 can be from the interior landings of the first groove 511.
In the present embodiment, the material of the first port guard member 51 is softer, can not make to insert magnetic-control sputtering ring head end 31 and the first rete 4 in the first groove 511 impaired.
Continue combination with reference to figure 4 and Fig. 5, magnetic-control sputtering ring package also comprises the second port protection part 52.Coated the first rete 4 and the magnetic-control sputtering ring tail end 32 that is positioned at magnetic-control sputtering ring tail end 32 of the second port protection part 52.
In the present embodiment, have the second groove (not shown) in the second port protection part 52, cover has the first rete tail end 42 of magnetic-control sputtering ring tail end 32 to insert in the second groove together with magnetic-control sputtering ring tail end 32.And magnetic-control sputtering ring tail end 32 and the first rete tail end 42 can be from landings in the second groove.
In the present embodiment, the material of the second port protection part 52 is softer, can not make to insert magnetic-control sputtering ring tail end 32 and the first rete 4 in the second groove impaired.
In the present embodiment, the first port guard member 51 and the second port protection part 52 structure that is formed in one.Like this, the first port guard member 51 and the second port protection part 52 can not move each other, further ensure can not occur between the first port guard member 51 and the second port protection part 52 the even situation of collision of friction.Thereby further reduce the probability that cut appears in magnetron sputtering ring surface.
In other embodiment, the first port guard member and the second port protection part also can be for being connected to each other structure.In other embodiment, the first port guard member and the second port protection part can be also Split type structure, also belong to the scope of the utility model protection.
In the present embodiment, for further protection magnetic-control sputtering ring 3 is not impaired, magnetic-control sputtering ring package also comprises the second rete (not shown).Described the second rete is coated described the first rete 4, the first port guard member 51 and the second port protection part 52.
The material of the second rete is identical with the material of the first rete 4.
In other embodiment, magnetic-control sputtering ring package does not have the second rete and belongs to protection domain of the present utility model yet.
In the present embodiment, in the first rete 4, the second rete, be true sky sealing state, can make the holding time of magnetron sputtering sputtering ring 3 in the first rete 4 and the second rete more of a specified duration.
Although the utility model discloses as above, the utility model is not defined in this.Any those skilled in the art, not departing from spirit and scope of the present utility model, all can make various changes or modifications, and therefore protection domain of the present utility model should be as the criterion with claim limited range.
Claims (10)
1. a magnetic-control sputtering ring package, for packing magnetic-control sputtering ring, described magnetic-control sputtering ring comprises magnetic-control sputtering ring head end and magnetic-control sputtering ring tail end, described magnetic-control sputtering ring head end and magnetic-control sputtering ring tail end form opening, it is characterized in that, comprising:
The first rete of coated described magnetic-control sputtering ring;
The first port guard member, coated the first rete and the magnetic-control sputtering ring head end that is positioned at magnetic-control sputtering ring head end;
The second port protection part, coated the first rete and the magnetic-control sputtering ring tail end that is positioned at magnetic-control sputtering ring tail end.
2. magnetic-control sputtering ring package as claimed in claim 1, is characterized in that, described the first port guard member and the second port protection part are one-body molded.
3. magnetic-control sputtering ring package as claimed in claim 1, is characterized in that, described the first port guard member is connected with the second port protection part.
4. magnetic-control sputtering ring package as claimed in claim 1, is characterized in that, in described the first port guard member, has the first groove, and the first rete and the magnetic-control sputtering ring head end that are positioned at magnetic-control sputtering ring head end insert described the first groove.
5. magnetic-control sputtering ring package as claimed in claim 1, is characterized in that, in described the second port protection part, has the second groove, and the first rete and the magnetic-control sputtering ring tail end that are positioned at magnetic-control sputtering ring tail end insert described the second groove.
6. magnetic-control sputtering ring package as claimed in claim 1, is characterized in that, described magnetic-control sputtering ring also comprises: the second rete of coated described the first rete, the first port guard member and the second port protection part.
7. magnetic-control sputtering ring package as claimed in claim 6, is characterized in that, the oxygen transit dose of described the first rete and the second rete is less than or equal to 5ml/m
224hrMPa, vapor transfer rate is less than or equal to 3ml/m
224hr.
8. magnetic-control sputtering ring package as claimed in claim 6, is characterized in that, the thickness of described the first rete and the second rete is more than or equal to 90 μ m, and density is more than or equal to 0.960g/cm
3.
9. magnetic-control sputtering ring package as claimed in claim 6, is characterized in that, the pulling strengrth of described the first rete and the second rete is more than or equal to 100N/15mm, anti-puncture intensity and is more than or equal to 10N.
10. the magnetic-control sputtering ring package as described in arbitrary claim in claim 1 to 9, is characterized in that, described magnetic-control sputtering ring package is vacuum sealed package part.
Priority Applications (1)
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CN201420448664.XU CN203997450U (en) | 2014-08-08 | 2014-08-08 | Magnetic-control sputtering ring package |
Applications Claiming Priority (1)
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CN201420448664.XU CN203997450U (en) | 2014-08-08 | 2014-08-08 | Magnetic-control sputtering ring package |
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CN203997450U true CN203997450U (en) | 2014-12-10 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106628588A (en) * | 2015-10-28 | 2017-05-10 | 宁波江丰电子材料股份有限公司 | Packaging method and tool for focusing ring |
-
2014
- 2014-08-08 CN CN201420448664.XU patent/CN203997450U/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106628588A (en) * | 2015-10-28 | 2017-05-10 | 宁波江丰电子材料股份有限公司 | Packaging method and tool for focusing ring |
CN106628588B (en) * | 2015-10-28 | 2019-01-29 | 宁波江丰电子材料股份有限公司 | The packing method and wrapping tool of focusing ring |
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