CN203981745U - The testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power - Google Patents
The testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power Download PDFInfo
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- CN203981745U CN203981745U CN201420396821.7U CN201420396821U CN203981745U CN 203981745 U CN203981745 U CN 203981745U CN 201420396821 U CN201420396821 U CN 201420396821U CN 203981745 U CN203981745 U CN 203981745U
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- mos field
- isolating transformer
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Abstract
The utility model discloses a kind of testing circuit of switch MOS field effect transistor DS terminal voltage of isolating switch power, comprise strong power system, filter rectifier, mu balanced circuit, isolating transformer and test circuit, filter rectifier is connected with mu balanced circuit input end with strong power system, the output terminal of mu balanced circuit is connected with isolating transformer, test circuit comprises oscillograph and switch MOS field effect transistor, the drain electrode of switch MOS field effect transistor is connected between the output terminal of mu balanced circuit and the input end of isolating transformer, grid connects control end G1, source electrode is through resistance R 1 ground connection, drain electrode and the source electrode of oscillograph connecting valve metal-oxide-semiconductor field effect transistor, the output terminal of isolating transformer is connected with the zero line N end of strong power system.The utility model is connected the output terminal of isolating transformer with the zero line of strong power system, make ground that ground that Switching Power Supply connects and oscillograph connect in same voltage levvl, has avoided having voltage difference between the two and has caused Switching Power Supply damaged, has reduced detection difficulty.
Description
Technical field
The utility model relates to a kind of application circuit, is specifically related to a kind of testing circuit of switch MOS field effect transistor DS terminal voltage of isolating switch power.
Background technology
In existing isolation type switch power, conventionally be all provided with the switch of switch MOS field effect transistor as power supply, but in the course of work of switch MOS field effect transistor, if (DS end) overtension, can cause switch MOS field effect transistor breakdown between its drain electrode and source electrode, cause immeasurable loss.Therefore in the process of exploitation isolation type switch power, need to detect the voltage of switch metal-oxide-semiconductor field effect transistor DS end, to ensure its serviceable life.
Conventionally carry out the voltage of detector switch metal-oxide-semiconductor field effect transistor DS end with oscillograph, but due to the isolation characteristic of isolation type switch power, its secondary output end be connected in analog, and oscillographic one end is connected with the earth, the voltage difference that both introduce, if be directly connected, can cause Switching Power Supply unstable, even make Switching Power Supply demolition.In order to overcome the above problems, the most frequently used method is on oscillograph, to connect an insulating power supply, makes ground and oscillographic the keeping apart of Switching Power Supply, so just can avoid Switching Power Supply to cause damage.
But adopt above detection method, also there is following problem: because some oscillograph power is larger, therefore also need to provide powerful insulating power supply, add in a lot of special occasions, can not carry at any time insulating power supply, therefore bring much inconvenience to test, improved the difficulty of test, even cause test job normally to carry out.
Utility model content
The utility model, in order to overcome above deficiency, provides a kind of without using insulating power supply, just can realize the testing circuit of the switch MOS field effect transistor DS terminal voltage of the isolating switch power of effective detection.
In order to solve the problems of the technologies described above, the technical solution of the utility model is: a kind of testing circuit of switch MOS field effect transistor DS terminal voltage of isolating switch power, comprise strong power system, filter rectifier, mu balanced circuit, isolating transformer and test circuit, the output terminal of described strong power system is connected with the input end of described filter rectifier, the output terminal of filter rectifier is connected with the input end of mu balanced circuit, the output terminal of described mu balanced circuit is connected with the input end of isolating transformer, described isolating transformer output terminal passes through capacitor C 1 and is connected in analog, described test circuit comprises oscillograph and switch MOS field effect transistor, the drain electrode of described switch MOS field effect transistor is connected between the output terminal of described mu balanced circuit and the input end of isolating transformer, grid connects control end G1, source electrode is through resistance R 1 ground connection, drain electrode and the source electrode of described oscillograph connecting valve metal-oxide-semiconductor field effect transistor, the output terminal of described isolating transformer is also connected with the zero line N end of strong power system.
Further, described isolating transformer is that described former limit winding is connected with the output terminal of described mu balanced circuit and the drain electrode of described switch MOS field effect transistor by a former limit winding and a transformer T1 that secondary winding forms.
Further, the secondary winding of isolating transformer is connected with diode D1 is anodal, after the negative pole of described diode D1 is connected with capacitor C 2, passes through capacitor C 1 and is connected in analog, and described capacitor C 2 is also connected with the zero line N end of described strong power system.
The testing circuit of the switch MOS field effect transistor DS terminal voltage of the isolating switch power that the utility model provides, the output terminal of isolating transformer is connected with the zero line of strong power system, make isolating switch power become the Switching Power Supply of non-isolation, the ground that the ground that Switching Power Supply connects thus and oscillograph connect is in same voltage levvl, avoid having voltage difference between the two and caused Switching Power Supply damaged, without using insulating power supply normally to detect switch metal-oxide-semiconductor field effect transistor DS terminal voltage, greatly improve and detected convenient degree, simple in structure, reliable for effect.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of the testing circuit of the switch MOS field effect transistor DS terminal voltage of the utility model isolating switch power.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail:
As shown in Figure 1, the utility model provides a kind of testing circuit of switch MOS field effect transistor DS terminal voltage of isolating switch power, comprise strong power system 1, filter rectifier 2, mu balanced circuit 3, isolating transformer T1 and test circuit 4, the output terminal of strong power system 1 is connected with the input end of filter rectifier 2, the output terminal of filter rectifier 2 is connected with the input end of mu balanced circuit 3, the output terminal of mu balanced circuit 3 is connected with the input end of isolating transformer T1, and isolating transformer T1 output terminal passes through capacitor C 1 and is connected in analog.
Wherein, test circuit 4 comprises oscillograph and switch MOS field effect transistor Q1, the drain electrode (D end) of switch MOS field effect transistor Q1 is connected between the output terminal of mu balanced circuit 3 and the input end of isolating transformer T1, the grid (G end) of switch MOS field effect transistor Q1 is connected with control end G1, control end G1 control gate electrode current, to realize conducting to switch metal-oxide-semiconductor field effect transistor Q1 or effective control of cut-off state; The source electrode (S end) of switch MOS field effect transistor Q1 connects in analog through resistance R 1, the D end of oscillographic anodal connecting valve metal-oxide-semiconductor field effect transistor Q1, the S end of negative pole connecting valve metal-oxide-semiconductor field effect transistor Q1, for the DS terminal voltage of Test Switchboard metal-oxide-semiconductor field effect transistor Q1, isolating transformer T1 output terminal is also connected with the zero line N end of strong power system 1.It should be noted that, strong power system 1 comprises live wire L end and zero line N end, wherein to hold voltage be relative to the earth 0 to zero line N, after the output terminal of isolating transformer T1 and the N of strong power system 1 end is connected, make isolating switch power become the Switching Power Supply of non-isolation, the ground that the ground that Switching Power Supply connects thus and oscillograph connect is in same voltage levvl, avoid having voltage difference between the two and caused Switching Power Supply damaged, without using insulating power supply normally to detect the DS terminal voltage of switch metal-oxide-semiconductor field effect transistor Q1, greatly improve the convenient degree of detection.
Preferably, isolating transformer T1 comprises a former limit winding and a secondary winding, former limit winding is connected with the D end of mu balanced circuit 3 and described switch MOS field effect transistor Q1, is used to switch MOS field effect transistor Q1 that drain current is provided, and makes the effective conducting of switch MOS field effect transistor Q1.The secondary winding of isolating transformer T1 and diode D1 are anodal to be connected, and the negative pole of diode D1 is connected with capacitor C 2 afterwards and is connected by capacitor C 1 in analog, and capacitor C 2 is also held and is connected with the zero line N of described strong power system 1.
To sum up, the testing circuit of the switch MOS field effect transistor DS terminal voltage of the isolating switch power that the utility model provides, the output terminal of isolating transformer T1 is connected with the zero line of strong power system 1, make isolating switch power become the Switching Power Supply of non-isolation, the ground that the ground that Switching Power Supply connects thus and oscillograph connect is in same voltage levvl, avoid having voltage difference between the two and caused Switching Power Supply damaged, without using insulating power supply normally to detect switch metal-oxide-semiconductor field effect transistor DS terminal voltage, greatly improve and detected convenient degree, simple in structure, reliable for effect.
Although embodiment of the present utility model is illustrated in instructions, these embodiments just, as prompting, should not limit protection domain of the present utility model.In the scope that does not depart from the utility model aim, carrying out various omissions, displacement and change all should be included in protection domain of the present utility model.
Claims (3)
1. the testing circuit of the switch MOS field effect transistor DS terminal voltage of an isolating switch power, comprise strong power system, filter rectifier, mu balanced circuit, isolating transformer and test circuit, the output terminal of described strong power system is connected with the input end of described filter rectifier, the output terminal of filter rectifier is connected with the input end of mu balanced circuit, the output terminal of described mu balanced circuit is connected with the input end of isolating transformer, described isolating transformer output terminal passes through capacitor C 1 and is connected in analog, it is characterized in that: described test circuit comprises oscillograph and switch MOS field effect transistor, the drain electrode of described switch MOS field effect transistor is connected between the output terminal of described mu balanced circuit and the input end of isolating transformer, grid connects control end G1, source electrode is through resistance R 1 ground connection, drain electrode and the source electrode of described oscillograph connecting valve metal-oxide-semiconductor field effect transistor, the output terminal of described isolating transformer is also connected with the zero line N end of strong power system.
2. the testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power according to claim 1, it is characterized in that: described isolating transformer comprises a former limit winding and a secondary winding, described former limit winding is connected with the output terminal of described mu balanced circuit and the drain electrode of described switch MOS field effect transistor, and described secondary winding is connected to the zero line N end of strong power system.
3. the testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power according to claim 2, it is characterized in that: the secondary winding of isolating transformer is connected with diode D1 is anodal, after the negative pole of described diode D1 is connected with capacitor C 2, passes through capacitor C 1 and be connected in analog, described capacitor C 2 is also connected with the zero line N end of described strong power system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420396821.7U CN203981745U (en) | 2014-07-17 | 2014-07-17 | The testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420396821.7U CN203981745U (en) | 2014-07-17 | 2014-07-17 | The testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power |
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| Publication Number | Publication Date |
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| CN203981745U true CN203981745U (en) | 2014-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201420396821.7U Active CN203981745U (en) | 2014-07-17 | 2014-07-17 | The testing circuit of the switch MOS field effect transistor DS terminal voltage of isolating switch power |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109125932A (en) * | 2018-10-23 | 2019-01-04 | 张鹏德 | A kind of electromagnetic pulse generation ring |
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2014
- 2014-07-17 CN CN201420396821.7U patent/CN203981745U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109125932A (en) * | 2018-10-23 | 2019-01-04 | 张鹏德 | A kind of electromagnetic pulse generation ring |
| CN109125932B (en) * | 2018-10-23 | 2023-11-14 | 张鹏德 | Electromagnetic pulse generation ring |
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