CN203967503U - Optical module equipment - Google Patents
Optical module equipment Download PDFInfo
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- CN203967503U CN203967503U CN201320891549.5U CN201320891549U CN203967503U CN 203967503 U CN203967503 U CN 203967503U CN 201320891549 U CN201320891549 U CN 201320891549U CN 203967503 U CN203967503 U CN 203967503U
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- Semiconductor Lasers (AREA)
Abstract
The utility model provides optical module equipment.This optical module equipment comprises by length, width and the form factor highly characterizing, and this equipment comprises: strutting piece; The multiple laser diode devices of the numbering that covers this strutting piece from 1 to N, the each Emission Lasers bundle that is constructed in the plurality of laser diode device; There is the free space of non-guiding characteristic, each Emission Lasers bundle that can be from the plurality of laser diode device; And combiner, be constructed to from multiple containing the each reception laser beam the laser diode device of gallium and nitrogen, and provide the output beam being characterized by selected wave-length coverage, selected spectral width, selected power and selected spatial configuration, wherein, this strutting piece is constructed to heat energy to be sent to radiator from the plurality of laser diode device.The utility model makes it possible to obtain a kind of cost-effective Optical devices for laser application, can manufacture Optical devices in relatively simple and cost-effective mode.
Description
Reference to related applications
The present application claims priority from U.S. application No. 13/732,233 entitled "LASER PACKAGE HAVING MULTIPLE EMITTERS CONFIGURED ON a support laser package" filed ON 31/12/2012, the disclosure of which is incorporated herein by reference in its entirety for all purposes.
Technical Field
The present invention relates generally to laser technology and related devices.
Background
High power direct diode lasers have existed for decades, starting with laser diodes based on GaAs material systems and moving to AlGaAsP and InP material systems. Recently, high power GaN-based lasers operating in the short wavelength visible range have become of greater interest. More specifically, laser diodes operating in the violet, blue and finally green range are interesting for their application in optical storage, display systems and the like. Currently, high power laser diodes operating in these wavelength ranges are based on polar c-plane GaN. Conventional polar GaN-based laser diodes have many applications, but unfortunately, the device performance is often inadequate.
SUMMERY OF THE UTILITY MODEL
The utility model provides a device that uses nonpolar or semipolar gallium-containing substrate such as GaN, AlN, InN, InGaN, AlGaN and AlInGaN etc. to emit electromagnetic radiation with high power. In various embodiments, the laser device includes a plurality of laser emitters that emit red, green, or blue electromagnetic radiation, integrated on a substrate or backing member (back member). By way of example only, the present invention may be applied to applications such as white lighting, multi-color lighting, flat panel lighting, medical, metrology, laser beam projectors and other displays, high intensity lamps, spectroscopy, entertainment, cinema, music and concerts, analytical fraud detection and/or identification, tools, water treatment, laser glazers, targeting, communication, transformation, transportation, leveling, curing and other chemical processing, heating, cutting and/or ablation, pumping other optical devices, other opto-electronic devices and related applications, and source lighting, among others.
In one particular embodiment, the present invention provides an optical module apparatus (optical module apparatus) comprising a form factor characterized by a length, a width, and a height. In one example, the height is characterized by a dimension that is less than 11mm and greater than 1mm, although variations are possible. The apparatus has a support and a plurality of gallium and nitrogen containing laser diode devices (laser diode devices) numbered from 1 to N overlying the support. Each laser device is capable of emitting a laser beam, wherein N is greater than 1. The emission may include blue emission at a wavelength ranging from 415 to 485nm, and/or green emission at a wavelength ranging from 500 to 560 nm. The support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink (heat sink). The free space of the apparatus has non-guided characteristics (non-guided characteristics) that are capable of delivering the emission of each laser beam from a plurality of laser beams. The combiner (combiner) is configured to receive a plurality of N incident laser beams from a plurality of gallium and nitrogen containing laser diode devices. The combiner is used to produce an output beam having a selected wavelength range, spectral width, power, and spatial configuration (spatial configuration), where N is greater than 1. In one example, the combiner is composed of free-space optics (free-space optics) to produce one or more free-space beams. At least one incident beam is characterized by a polarization purity of greater than 60% and less than 100%. As used herein, the term "polarization purity" means that greater than 50% of the emitted electromagnetic radiation is in a substantially similar polarization state, e.g., a Transverse Electric (TE) or Transverse Magnetic (TM) polarization state, but may have other meanings consistent with ordinary meaning. In one example, an operating optical output power of at least 5W to 200W is characterized by an output beam from the plurality of laser beams. The apparatus also has an electrical input interface (electrical input interface) configured to couple electrical input power to the plurality of laser diode devices and having a thermal impedance of less than 4 degrees celsius per electrical watt of electrical input power, characterized by a thermal path from the laser device to the heat sink. The device has less than a 20% reduction in optical output power over 500 hours when operated in an output power range with a constant input current at a reference temperature of 25 degrees celsius.
In an alternative specific embodiment, the present invention provides an optical module apparatus. The device has a form factor characterized by a length, a width, and a height. In one example, the height is characterized by a dimension that is less than 11mm and greater than 1mm, although variations are possible. In one particular embodiment, the apparatus has a support and a plurality of gallium and nitrogen containing laser diode devices numbered from 1 to N overlying the support. Each laser device is capable of emitting a laser beam, wherein N is greater than 1. The emission includes blue emission at a wavelength ranging from 415nm to 485nm, and/or green emission at a wavelength ranging from 500nm to 560 nm. The support is configured to transfer thermal energy from the plurality of laser diode devices to the heat sink. The apparatus has a combiner configured to receive a plurality of N incident laser beams. The device has at least one incident light beam characterized by a polarization purity greater than 60% and less than 100%, although variations exist. The device has a predetermined nominal operating optical output power range comprising at least 5W or more. The apparatus has an electrical input interface configured to couple electrical power to a plurality of laser diode devices and having a thermal impedance of less than 4 degrees celsius per electrical watt of input power characterized by a thermal path from the laser devices to a heat sink.
In yet another alternative embodiment, the present invention provides an optical module apparatus. The device has a form factor characterized by a length, a width, and a height. In one example, the height is characterized by a dimension that is less than 11mm and greater than 1mm, although variations are possible. The apparatus has a support and a plurality of gallium and nitrogen containing laser diode devices numbered from 1 to N overlying the support. Each laser device is capable of emitting a laser beam, wherein N is greater than 1. The emission includes blue emission at a wavelength ranging from 415nm to 485nm, and/or green emission at a wavelength ranging from 500nm to 560 nm. Each gallium and nitrogen containing laser diode is characterized by a non-polar or semi-polar oriented surface region. In one example, the device has a laser stripe region (laser stripe region) covering a non-polar or semi-polar surface region. Each laser band region is oriented in the c-direction or projection of the c-direction. In one example, the laser band region is characterized by a first end and a second end. The support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink. The apparatus has a combiner configured to receive a plurality of N incident laser beams. The combiner is used to produce an output beam having a selected wavelength range, spectral width, power, and spatial configuration, where N is greater than 1. The device has at least one incident light beam characterized by a polarization purity greater than 60% up to 100%, although variations are possible. In one example, the optical module apparatus has a predetermined nominal operating optical output power range including at least 5W or more. The apparatus has an electrical input interface configured to couple electrical power to a plurality of laser diode devices. A thermal impedance of less than 4 degrees celsius per electrical watt of input power is characterized by a thermal path from the laser device to the heat sink.
In one example, the non-polar or semi-polar oriented surface region is a semi-polar orientation characterized by a {20-21} or {20-2-1} plane, or alternatively, the non-polar or semi-polar oriented surface region is a semi-polar orientation characterized by a {30-31} or {30-3-1} plane. These planes may each be slightly cut or heavily cut, depending on the implementation. In one example, the non-polar or semi-polar oriented surface region is a non-polar orientation characterized by an m-plane. In one example, each laser device may operate in an environment that includes at least 150,000 parts per million (ppm) oxygen. Each laser device has substantially no reduction in oxygen efficiency over a period of time. In one example, each laser device includes a front face and a rear face.
The utility model provides an optical module equipment, include the form factor by length, width and height characterization, equipment includes: a support member; a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1; a free space having a non-guiding characteristic capable of emitting a laser beam from each of the plurality of laser diode devices; and a combiner configured to receive a laser beam from each of the plurality of gallium and nitrogen containing laser diode devices and provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration, wherein: the support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink; the combiner includes free-space optics configured to produce one or more free-space beams; a thermal path from the plurality of laser diode devices to the heat sink is characterized by a thermal impedance.
An apparatus according to the present invention, wherein at least some of the plurality of laser diode devices comprise AlInGaP laser diode devices configured to emit a laser beam characterized by red light emission having a wavelength ranging from 625nm to 665 nm.
The apparatus according to the present invention, wherein further comprising an electrical input interface configured to couple electrical input power with each of the plurality of laser diode devices.
The apparatus of the present invention, wherein the support comprises a material selected from the group consisting of copper, aluminum, silicon, and any combination thereof.
The apparatus of the present invention further comprises a microchannel cooler thermally coupled to the support.
The apparatus of the present invention further comprises a heat sink coupled between the support member and the plurality of laser devices.
The apparatus according to the present invention, wherein further comprising a phosphor material optically coupled to said output beam.
The apparatus according to the present invention, wherein the phosphor material is configured to operate in a mode selected from a reflective mode, a transmissive mode, and a combination of a reflective mode and a transmissive mode.
The device according to the present invention, wherein the phosphor material is coupled with an optical element or with a metal.
An apparatus according to the present invention, wherein the phosphor material is thermally coupled to the support along a continuous thermal gradient towards a selected portion of the heat sink area within a vicinity of the support.
The device according to the present invention, wherein further comprising an optical coupler configured to optically couple the plurality of laser beams with a phosphor material external to the modular device.
An apparatus according to the present invention, wherein the optical coupler comprises one or more optical fibers.
The apparatus according to the present invention, wherein the output light beam is geometrically configured to optimize interaction with the phosphor material from a first efficiency to a second efficiency.
According to the utility model discloses an equipment further includes: a phosphor material coupled with a laser beam; and wherein the combiner is configured to provide an output beam characterized by a selected spatial pattern having a maximum width and a minimum width.
The apparatus according to the present invention, wherein the electrical input interface is configured to couple a radio frequency electrical input with the plurality of laser diode devices.
The apparatus according to the present invention, wherein the electrical input interface is configured to couple a logic signal with the plurality of laser diode devices.
The apparatus of the present invention further comprises a submount member characterized by a Coefficient of Thermal Expansion (CTE) coupled to the support and the heat spreader.
The apparatus according to the present invention, wherein further comprising one or more sub-support members coupling the plurality of laser diode devices with the support member.
The apparatus of the present invention, wherein the one or more submount members comprise a material selected from the group consisting of aluminum nitride, BeO, diamond, synthetic diamond, and any combination of the foregoing.
The apparatus according to the present invention, wherein the one or more sub-mount members are configured to couple the plurality of laser diode devices with the support member.
The apparatus of the present invention, wherein further comprising a submount attached to the support, the submount characterized by a thermal conductivity of at least 200W/(mk).
The apparatus according to the present invention, wherein said plurality of laser diode devices are directly thermally coupled to said support member.
The apparatus according to the present invention, wherein at least a portion of the plurality of laser diode devices covers an oriented surface region selected from the group consisting of a non-polar gallium and nitrogen containing oriented surface region and a semi-polar gallium and nitrogen containing oriented surface region.
An apparatus according to the present invention, wherein the orientation surface region is a semipolar orientation characterized by a {20-21} or a {20-2-1} plane; and a laser band region overlying the directional surface region; wherein the laser band region is oriented in a projection in the c-direction.
The apparatus according to the present invention, wherein the orientation surface region is a non-polar orientation characterized by an m-plane; and a laser band region overlying the orientation surface region, wherein the laser band region is oriented in the c-direction.
According to the utility model discloses an equipment, wherein, free space optics includes fast axle collimating lens.
The apparatus according to the present invention, further comprising an optical fiber, wherein the output beam is coupled in the optical fiber.
The utility model also provides an optical module device, which comprises a shape factor represented by length, width and height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1; a waveguide configured to emit laser beams from the plurality of laser optical devices; and a combiner configured to receive the laser beams from the plurality of laser diode devices and provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein the support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink; at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by an optical output power of at least 5W; and a thermal path from the laser device to the heat sink is characterized by a thermal impedance of less than 4 degrees celsius per electrical watt of input power.
The utility model also provides an optical module device, which comprises a shape factor represented by length, width and height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices characterized by a non-polar or semi-polar directional surface area and configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1; a laser band region covering the non-polar or semi-polar surface region; wherein each laser band region is oriented in a c-direction or a projection of the c-direction and is characterized by a first end and a second end; and a combiner configured to receive a plurality of laser beams of the N incident laser beams; the combiner is for producing an output beam having a selected wavelength range, spectral width, power, and spatial configuration, wherein N is greater than 1; wherein the support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink; at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%; said output beam characterized by a predetermined nominal operating optical output power range of at least 5W; and a thermal path from the laser device to a heat sink is characterized by a thermal impedance of less than 4 degrees celsius per electrical watt of input power.
Additional benefits over the prior art are realized with the present invention. In particular, the invention makes it possible to obtain a cost-effective optical device for laser applications, including a laser bar for projectors, etc. In a particular embodiment, the present optical device can be manufactured in a relatively simple and cost-effective manner. Depending on the implementation, the present apparatus may be fabricated from materials that are conventional to those of ordinary skill in the art. The present laser device uses, inter alia, non-polar or semi-polar gallium nitride materials capable of achieving violet or blue or green emission. In one or more embodiments, the laser device is capable of emitting long wavelengths, for example, wavelengths ranging from about 430nm to 470nm for the blue wavelength region, or 500nm to about 540nm for the green wavelength region, but may be others, for example, the violet region. Of course, there are other variations, modifications, and alternatives. Depending on the implementation, one or more of these benefits may be achieved. These and other benefits may be described throughout this specification and more particularly below.
A further understanding of the nature and advantages of the present invention may be realized by reference to the latter portions of the specification and the drawings.
Drawings
Fig. 1 is a simplified diagram illustrating an optical device according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view of a laser device according to an embodiment of the present invention.
Fig. 3 is a simplified diagram illustrating a laser device with multiple emitters according to an embodiment of the present invention.
Fig. 4 is a simplified diagram illustrating a front view of a laser device having multiple cavity pieces according to an embodiment of the present invention.
Fig. 5A and 5B are diagrams illustrating a "p-side" upward facing laser package according to an embodiment of the present invention.
Fig. 6A and 6B are simplified diagrams illustrating a "p-side" face down laser package according to an embodiment of the present invention.
Fig. 7 is a simplified diagram illustrating separately addressable laser packages according to an embodiment of the present invention.
Fig. 8 is a simplified diagram illustrating a laser bar with a patterned bonding substrate according to an embodiment of the present invention.
Fig. 9(a) and 9(b) are simplified diagrams illustrating a plurality of laser bars configured with optical combiners according to embodiments of the present invention.
Fig. 10 is a schematic diagram of a laser module with a fiber array according to one example of the present invention.
Fig. 11 is a schematic diagram of a laser module with a fiber bundle according to one example of the present invention.
Fig. 12 is a schematic diagram of a laser module with lensed fibers according to one example of the invention.
Fig. 13 is a schematic diagram of a free-space laser combiner in accordance with an example of the present invention.
Fig. 14 is a schematic diagram of a free-space mirror-based laser combiner, according to an example of the present invention.
Fig. 15 is a schematic diagram of an enclosed free space laser module according to one example of the present invention.
Fig. 16 is a graphical representation of the close relationship of lifetime and laser coupling scheme in accordance with one example of the present invention.
Fig. 17 is a simplified diagram of a module form factor according to an embodiment of the present invention.
Detailed Description
Optical module devices that combine light output from multiple laser chips and/or laser bars and couple the light into a common fiber or medium are well established in the red and infrared wavelength ranges. Such modular devices are used in applications requiring very high power (> 10W to > 100W) and/or very high brightness, or in applications where remote light sources can serve a greater function. In recent years, GaN-based laser diodes emitting in the blue and green wavelength ranges have improved in efficiency, power and lifetime. The optical module arrangement that balances these high performance blue and green GaN-based lasers is certainly capable of providing optical output powers of greater than 5W to greater than 50W or 100W or 200W in existing and emerging applications requiring high brightness or remote sources of blue and/or green light. Such applications include high brightness displays, professional lighting, medical devices, defense systems, and the like.
One popular and effective way to combine light from emitters within a module is through direct fiber coupling. In this configuration, the laser chip or laser bar is mounted on a carrier and the emitted light will be coupled in the fiber by first using closed optics, such as a Fast Axis Collimating (FAC) lens, and then using the fiber, or by directly using the fiber with a shaped lens formed at the end facing the laser. In either case, the fiber is positioned near the laser facet. Typical fiber sizes range from 100 μm to 800 μm and have NA of 0.18 or greater. In these structures, the fiber is typically located near the laser diode facet area, and its sensitivity to optical or other damage mechanisms is well known. A typical distance of the fiber from the laser diode facet will be about 0.2mm to about 10 mm. While this is a proven method for combining light output from red or infrared laser diodes, there are disadvantages when the fiber couples blue or green devices based on conventional c-plane GaN-based lasers. One such disadvantage is that the service life is shortened and the light output from the module is rapidly diminished. Such reliability problems may arise from specific optical behavior due to the close proximity of the optical surfaces and particularly the fiber ends to the emitting face of the laser. These and other drawbacks have been overcome by the present device, which has been described throughout this specification, and more particularly below.
The present invention provides high power GaN-based laser devices for making and using these laser devices. In particular, the laser device is configured to operate with greater output power in the 0.5W to 5W or 5W to 20W or 20W to 100W or 200W, or blue or green wavelength range. Laser devices are fabricated using bulk nonpolar or semipolar gallium and nitrogen containing substrates. As described above, the output wavelength of the laser device may be in the blue wavelength region of 425nm to 475nm and the green wavelength region of 500nm to 545 nm. Laser devices according to embodiments of the present invention may also operate in wavelengths such as violet (395nm to 425nm) and blue-green (475nm to 505 nm). Laser devices may be used in a variety of applications, such as projection systems that project video content with high power lasers.
Fig. 1 is a simplified diagram showing an optical apparatus. As one example, an optical device includes a gallium nitride substrate member 101 having a crystalline surface region characterized by a semi-polar or non-polar orientation. For example, the gallium nitride substrate piece is a bulk GaN substrate characterized by having a non-polar or semi-polar crystalline surface region, but may be otherwise. The bulk GaN substrate may have a thickness of less than 105cm-2Or 105To 107cm-2Surface dislocation density of (2). The nitride crystal or wafer may include AlxInyGa1-x-yN, wherein x is more than or equal to 0, and y is more than or equal to 1 and x + y is less than or equal to 0. In a particular embodiment, the nitride crystal includes GaN. In one or more embodiments, the GaN substrate has about 10 in a direction substantially orthogonal or oblique to the surface5cm-2And about 108cm-2In between, threading dislocations. In various embodiments, the GaN substrate is characterized by a non-polar orientation (e.g., m-plane), wherein the waveguide is oriented in the c-direction or a direction substantially orthogonal to the a-direction.
In some embodiments, the GaN surface direction is substantially in the {20-21} direction, and the device has a laser band region formed to cover a portion of the cut crystalline oriented surface region. For example, the laser band region is characterized by a cavity orientation in projection substantially in the c-direction, which is substantially perpendicular to the a-direction. In one particular embodiment, the laser tape region has a first end 107 and a second end 109. In a preferred embodiment, the device is formed on a projection in the c-direction on a {20-21} gallium and nitrogen containing substrate having a pair of cleaved mirror structures facing each other.
In a preferred embodiment, the device has a first cleave plane disposed on a first end of the laser band region and a second cleave plane disposed on a second end of the laser band region. In one or more embodiments, the first cleave plane is substantially parallel to the second cleave plane. A mirror surface is formed on each cleaved surface. The first cleave plane includes a first mirror plane. In a preferred embodiment, the first mirror is provided by a scribe and break process of a top-side skip scribe. The scribing process may use any suitable technique, such as diamond scribing or laser scribing or a combination thereof. In a particular embodiment, the first mirror comprises a reflective coating. The reflective coating is selected from the group consisting of silicon dioxide, hafnium dioxide, titanium dioxide, tantalum pentoxide, zirconium oxide, including combinations thereof, and the like. The first mirror may also have an anti-reflective coating.
Moreover, in a preferred embodiment, the second cleavage plane comprises a second mirror plane. According to a particular embodiment, the second mirror is provided by a scribe and break process of the top-side skip scribe. Preferably, the scribe is diamond scribed or laser scribed or the like. In a particular embodiment, the second mirror includes a reflective coating, e.g., silicon dioxide, hafnium dioxide, titanium dioxide, tantalum pentoxide, zirconium oxide, combinations thereof, and the like. In a particular embodiment, the second mirror has an anti-reflective coating.
In a particular embodiment, on the non-polar Ga-containing substrate, the device is characterized in that the spontaneously emitted light is polarized (polarized) in a direction substantially perpendicular to the c-direction. In a preferred embodiment, the spontaneously emitted light is characterized by a polarization ratio perpendicular to the c-direction of greater than 0.1 to about 1. In a preferred embodiment, the spontaneously emitted light is characterized by a wavelength in the range of from about 430nm to about 470nm that produces blue emission, alternatively, a wavelength in the range of from about 500nm to about 540nm that produces green emission, and the like. For example, the spontaneously emitted light may be purple (e.g., 395 to 420nm), blue (e.g., 430 to 470nm), green (e.g., 500 to 540nm), and the like. In a preferred embodiment, the spontaneously emitted light is highly polarized and characterized by a polarization ratio of greater than 0.4. In another specific embodiment, the device is further characterized by polarizing the spontaneously emitted light in a direction substantially parallel to the a-direction or perpendicular to the cavity direction, with the cavity direction oriented in the projection direction of the c-direction, on a semipolar {20-21} Ga-containing substrate.
In one particular embodiment, the present invention provides an alternative device structure that is capable of emitting light above 501nm in a ridge laser implementation. The device is provided with one or more of the following epitaxially grown elements:
n-GaN coating with thickness of 100-3000 nm and 5E17cm-3To 3E18cm-3The Si-doped grade of (1);
an n-side SCH layer composed of indium with a mole fraction between 2% and 10% and InGaN with a thickness from 20nm to 200 nm;
a plurality of quantum well active region layers consisting of at least two 2.0nm to 8.5nm InGaN quantum wells, GaN or InGaN barriers spaced above 1.5nm and optionally up to about 12 nm;
a p-side SCH layer consisting of indium with a mole fraction between 1% and 10% and an InGaN or upper GaN guiding layer with a thickness from 15nm to 100 nm;
an electron blocking layer consisting of AlGaN having a mole fraction of between 6% and 22% of aluminum and a thickness from 5nm to 20nm, and doped with Mg;
p-GaN coating with thickness of 400-1000 nm and 2E17cm-3To 2E19cm-3The Mg-doped grade of (1); and
a p + + -GaN contact layer, having a thickness of from 20 to 40nm, with 1E19cm-3To 1E21cm-3The Mg-doped grade of (1).
Fig. 2 is a cross-sectional view of a laser apparatus 200. As shown, the laser device includes a gallium nitride substrate 203 with an underlying n-type metal back contact region 201. For example, the substrate 203 may be characterized by a semi-polar or non-polar orientation. The device also has an upper n-type gallium nitride layer 205, an active region 207, and an upper p-type gallium nitride layer structured as a laser band region 209. Each of these regions is formed using an epitaxial deposition technique of Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), or other epitaxial growth techniques suitable for GaN growth. The epitaxial layer is a high quality epitaxial layer overlying an n-type gallium nitride layer. In some embodiments, the high quality layer is doped with, for example, Si or O to form an n-type material having about 1016cm-3And 1020cm-3With the doping concentration in between.
Depositing n-type Al on a substrateuInvGa1-u-vN layers, wherein u is more than or equal to 0, and v, u + v are less than or equal to 1. The carrier concentration may be about 1016cm-3And 1020cm-3Within the range of (a). The deposition may be performed using Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE).
For example, a bulk GaN substrate is placed on a susceptor (susceptor) in an MOCVD reactor. After the reactor is closed, emptied and backfilled (or a load lock configuration is used) to atmospheric pressure, the susceptor is heated to a temperature between about 1000 and about 1200 ℃ in the presence of a nitrogen-containing gas. The susceptor was heated to about 900 to 1200 ℃ under liquid ammonia. A flow of a gallium-containing metal organic precursor, e.g., trimethyl gallium (TMG) or triethyl gallium (TEG), is introduced in a carrier gas at a total rate of between about 1 and 50 standard cubic centimeters per minute (sccm). The carrier gas may include hydrogen, helium, nitrogen, or argon. The ratio of the flow rate of the group V precursor (ammonia) to the flow rate of the group III precursor (trimethyl gallium, triethyl gallium, trimethyl indium, trimethyl aluminum) during growth is between about 2000 and about 12000. A flow of disilane is introduced into the carrier gas having a total flow rate between about 0.1sccm and 10 sccm.
In one embodiment, the laser band region is a p-type gallium nitride layer 209. The laser stripes are provided by a dry etching process, however, wet etching may also be used. The dry etch process is an inductively coupled process using a chlorine-containing species, or a reactive ion etch process using similar chemistry. The chlorine-containing species is typically derived from chlorine gas or the like. The device also has an upper dielectric region that exposes the contact region 213. The dielectric region is an oxide, such as silicon dioxide or silicon nitride, and couples the contact region to the upper metal layer 215. Preferably, the upper metal layer is a multilayer structure comprising gold and platinum (Pt/Au), palladium and gold (Pd/Au), or nickel gold (Ni/Au).
Preferably, the active region 207 includes 1 to 10 quantum well regions or double heterostructure regions for light emission. On depositing n-type AluInvGa1-u-vAfter the N layers are formed to a desired thickness, the active layer is deposited. Preferably, the quantum well is InGaN with GaN, AlGaN, InAlGaN or InGaN barrier layers separating it. In other embodiments, the well layer and the barrier layer each comprise AlwInxGa1-w-xN and AlyInzGa1-y-zN, wherein 0 is w or more, x, y, z, w + x, y + z is 1 or less, wherein w is less than u, y and/or x is greater than v, z, such that the band gap of the one or more well layers is less than the band gap of the one or more barrier layers and the N-type layer. The well layer and the barrier layer each have a thickness between about 1nm and about 20 nm. The composition and structure of the active layer is selected to provide emission at a preselected wavelength. The active layer may not be doped (or not intentionally doped) or it may be n-type or p-type doped.
The active region may also include an electron blocking region, and a separate confinement heterojunctionAnd (5) forming. The electron blocking layer may include AlsIntGa1-s-tN, where 0. ltoreq. s, t, s + t. ltoreq.1, has a higher energy band gap than the active layer, and may be p-type doped. In a particular embodiment, the electron blocking layer comprises AlGaN. In another embodiment, the electron blocking layer comprises an AlGaN/GaN superlattice structure including alternating AlGaN and GaN layers, each having a thickness between about 0.2nm and about 5 nm.
As noted, a p-type gallium nitride structure is deposited over the electron blocking layer and the one or more active layers. The p-type layer may be doped with Mg to about 1016cm-3And 1022cm-3On the order of between about 5nm and about 1000nm thick. The outermost 1-50nm of the p-type layer may be doped more than the remainder of the layer to enable improved electrical contact. The device also has an upper dielectric region, e.g., silicon dioxide, which exposes the contact region 213.
The metal contacts are made of a suitable material, such as silver, gold, aluminum, nickel, platinum, rhodium, palladium, chromium, and the like. The contacts may be deposited by thermal evaporation, e-beam evaporation, electroplating, sputtering, or another suitable technique. In a preferred embodiment, the electrical contact serves as a p-type electrode of the optical device. In another embodiment, the electrical contact serves as an n-type electrode of the optical device. Typically, the laser devices described above and shown in fig. 1 and 2 are suitable for related low power applications.
In various embodiments, the present invention achieves high output power from a diode laser by broadening one or more portions of the laser cavity member from a single lateral mode range of 1.0-3.0 μm to a multiple lateral mode range of 5.0-20 μm. In some cases, a laser diode having a cavity with a width of 50 μm or more is used.
The laser stripe length or cavity length ranges from 300 to 3000 μm and uses growth and fabrication techniques such as described in U.S. patent application No. 12/759,273 filed 4/13 2010, which is incorporated herein by reference. As one example, laser diodes are fabricated on non-polar or semi-polar gallium-containing substrates, wherein the internal electric field is substantially eliminated or reduced relative to polar c-plane orientation devices. It will be appreciated that a reduction in the internal electric field generally enables more efficient recombination of the radiation. In addition, the heavy hole mass is expected to be lighter on non-polar and semi-polar substrates so that better gain characteristics can be achieved from the laser.
One difficulty in fabricating high power GaN-based lasers with wide cavity designs is the phenomenon: the optical field distribution in the lateral direction of the cavity becomes asymmetric where there are locally bright areas and locally dark areas. This behavior is commonly called filamentation and can be caused by lateral changes in the refractive index or thermal profile that alter the mode-guiding properties. This behavior can also be the result of non-uniformities in local gain/loss, which are caused by non-uniform injection of carriers in the active region or current crowding where the current is preferably conducted through the outer region of the laser cavity. That is, the current injected through the p-side electrode tends to be towards the edge of the etched p-plated ridge/strip required for lateral waveguiding, and then conducts downward where holes recombine with electrons mainly near the sides of the strip. Regardless of the cause, this filamentation or asymmetric optical field distribution can lead to poor laser performance due to increased stripe width.
Fig. 3 is a simplified diagram illustrating a laser device with multiple emitters according to an embodiment of the present invention. As shown in fig. 3, the laser apparatus includes a substrate and a plurality of emitters. Each cavity member, in combination with an underlying active region and other electronic components within the substrate, is part of a laser diode. The laser device in fig. 3 comprises three laser diodes, each with its emitter or cavity member (e.g. cavity member 302 acting as a waveguide for the laser diode) and sharing a substrate 301, which contains one or more active regions. In various embodiments, the active region includes a quantum well or double heterostructure for light emission. The cavity member serves as a waveguide. A device having a plurality of cavity members is integrated on one substrate.
The substrate shown in fig. 3 contains gallium and nitrogen materials and is made of a non-polar or semi-polar bulk GaN substrate. The cavity members as shown are arranged parallel to each other. For example, the chamber body 301 includes a front mirror and a rear mirror, similar to the chamber body 101 shown in fig. 1. Each laser cavity is characterized by a cavity width w ranging from about 1 to about 6 μm. This arrangement of the cavity members increases the effective stripe width while ensuring uniform pumping of the cavity members. In one embodiment, the cavity member is characterized by substantially equal lengths and widths.
Depending on the application, high power laser devices may have a number of cavity pieces. The number n of cavity pieces may range from 2 to5, 10 or even 20. The lateral spacing or distance separating one cavity piece from another can range from 2 μm to 25 μm, depending on the requirements of the laser diode. In various embodiments, the length of the cavity member may range from 300 μm to 2000 μm, and in some cases, up to 3000 μm.
In a preferred embodiment, the laser emitters (e.g., cavity members as shown) are arranged in a linear array on a single chip to emit blue or green laser light. The emitters are substantially parallel to each other and can be separated by 3 μm to 15 μm, 15 μm to 75 μm, 75 μm to 150 μm, or 150 μm to 300 μm. The number of emitters in the array may vary from 3 to 15, or from 15 to 30, from 30 to 50, or from 50 to 100, or greater than 100. Each emitter may produce an average output power of 25 to 50mW, 50 to 100mW, 100 to 250mW, 250 to 500mW, 500 to 1000mW, or greater than 1W. Thus, the total output power of a laser device with multiple emitters may range from 200 to 500mW, 500 to 1000mW, 1-2W, 2-5W, 5-10W, 10-20W, and greater than 20W.
With the present technique, the size of each emitter will have a width of 1.0 to 3.0 μm, 3.0 to 6.0 μm, 6.0 to 10.0 μm, 10 to 20.0 μm, 20 to 30 μm, and greater than 30 μm. The length ranges from 400 μm to 800 μm, 800 μm to 1200 μm, 1200 μm to 1600 μm, or greater than 1600 μm.
The cavity member has a front end and a rear end. The laser device is configured to emit a laser beam through a front mirror at the front end. The front end may have an anti-reflection coating or no coating at all, allowing radiation to pass through the mirror without excessive reflectivity. Since no laser beam is emitted from the rear end of the cavity member, the rear mirror is configured to reflect radiation back into the cavity. For example, the rear mirror includes a highly reflective coating having a reflectivity of greater than 85% or 95%.
Fig. 4 is a simplified diagram showing a front view of a laser device having multiple cavity members. As shown in fig. 4, active region 307 can be seen positioned in substrate 301. As shown, the cavity member 302 includes a passageway 306. Vias are provided on the cavity piece and are opened in a dielectric layer 303, such as silicon dioxide. The top of the cavity piece with the vias can be considered a laser ridge that exposes the electrode 304 for electrical contact. The electrode 304 comprises a p-type electrode. In one particular embodiment, a common p-type electrode is deposited over the cavity member and dielectric layer 303, as shown in FIG. 4.
The cavity members are electrically coupled to each other by electrodes 304. Laser diodes, each having an electrical contact through its cavity member, share a common n-side electrode. Depending on the application, the n-side electrode can be electrically coupled to different configurations of the cavity. In a preferred embodiment, a common n-side electrode is electrically coupled to the bottom side of the substrate. In some embodiments, the n-contact is on top of the substrate and the connection is formed by etching deep into the substrate from the top down, then depositing a metal contact. For example, the laser diodes are electrically coupled to each other in a parallel configuration. In this configuration, all laser cavities can be pumped relatively equally when current is applied to the electrodes. Furthermore, since the ridge width will be relatively narrow, in the range of 1.0 to 5.0 μm, the center of the cavity piece will be very close to the edge of the ridge (e.g., via), so that current crowding or non-uniform injection will be reduced. Most importantly, filamentation can be prevented and the transverse optical field distribution can be symmetric in such narrow cavities, as shown in fig. 2A.
It will be appreciated that a laser device with multiple cavity members has an effective ridge width of n x w, which may simply be close to the width of a conventional high power laser having a width in the range of 10 to 50 μm. Typical lengths of such multi-stripe lasers may range from 400 μm to 2000 μm, but may be as high as 3000 μm. A schematic diagram of a conventional single-stripe narrow-ridge emitter, intended for low power applications of 5 to 500mW, with the resulting distribution of laterally symmetric fields in fig. 2, is shown in fig. 1. A schematic diagram of a multi-strip transmitter is shown in fig. 2, this embodiment being intended for an operating power of 0.5 to 10W as an example.
The laser devices shown in fig. 3 and 4 have a wide range of applications. For example, the laser device may be coupled to a power supply and operated at a power level of 0.5 to 10W. In some applications, the power supply is specifically configured to operate at power levels greater than 10W. The operating voltage of the laser device can be less than 5V, 5.5V, 6V, 6.5V, 7V, and other voltages. In various embodiments, the wall outlet efficiency (e.g., total electro-optic power efficiency) may be 15% or greater, 20% or greater, 25% or greater, 30% or greater, 35% or greater.
A typical application of a laser device is to emit a single laser beam. Since the laser device includes many emitters, optics are required to combine or calibrate the output from the emitters. Fig. 5A and 5B are diagrams illustrating a laser package with the "p-side" facing up. As shown in fig. 5A, the laser bar is mounted on a submount (submount). The laser bar includes an array of emitters (e.g., as shown in fig. 3 and 4). The laser bar is attached to a submount, which is positioned between the laser bar and the heat sink. It should be appreciated that the submount allows for a laser bar (e.g., gallium nitride material) to be securely attached to a heat sink (e.g., copper material with high thermal emissivity). In various embodiments, the submount comprises an aluminum nitride material characterized by a high thermal conductivity. For example, the thermal conductivity of the aluminum nitride material used in the submount may exceed 200W/(mk). Other types of materials may be used for the submount, such as diamond, copper tungsten, beryllium oxide. In a preferred embodiment, the submount material is used to compensate for the Coefficient of Thermal Expansion (CTE) mismatch between the laser bar and the heat sink.
In FIG. 5A, the "p-side" (i.e., the side with the emitter) of the laser bar faces upward and, therefore, is not electrically coupled to the submount. The p-side of the laser bar is electrically coupled to the anode of the power supply via a number of bonding wires. Since both the submount and the heat sink are electrically conductive, the cathode electrode of the power supply can be electrically coupled to the other side of the laser bar through the submount and the heat sink.
In a preferred embodiment, the emitter array of laser bars is fabricated from a gallium nitride substrate. The substrate may have a surface characterized by a semi-polar or non-polar orientation. The gallium nitride material allows for the laser device to be packaged without hermetic sealing. More particularly, by using gallium nitride materials, the laser bar is substantially free of AlGaN or InAlGaN cladding layers. When the emitter is substantially close to the p-type material, the laser device is substantially free of p-type AlGaN or p-type InAlGaN material. Typically, AlGaN or InAlGaN coatings are unstable when operated at standard atmospheric pressures because they interact with oxygen. To solve this problem, a conventional laser device including AlGaN or InAlGaN material is hermetically sealed to prevent interaction between AlGaN or InAlGaN and air. In contrast, in the laser device according to the embodiment of the present invention, since the AlGaN or InAlGaN plating layer is not present, it is not necessary to hermetically seal the laser device. By eliminating the need for hermetic packaging, the cost of manufacturing a laser device and package according to embodiments of the present invention may be lower than that of conventional laser devices.
Fig. 5B is a side view of the laser apparatus shown in fig. 5A. The laser bar is mounted on the submount and the submount is mounted on the hot side. As described above, since the laser bar includes many emitters, the emitted laser light is combined with a collimating lens to form a desired laser beam. In a preferred embodiment, the collimating lens is a Fast Axis Collimating (FAC) lens characterized by a cylindrical shape.
Fig. 6A and 6B are simplified diagrams illustrating a "p-side" face down laser package according to an embodiment of the present invention. In fig. 6A, the laser bar is mounted on a submount. The laser bar includes an array of emitters (e.g., as shown in fig. 3 and 4). In a preferred embodiment, the laser bar comprises a substrate characterized by a semi-polar or non-polar orientation. The laser bar is attached to a submount, which is positioned between the laser bar and the heat sink. The "p-side" (i.e., the side with the emitter) of the laser bar faces downward and is therefore directly coupled with the submount. The p-side of the laser bar is electrically coupled to the anode of the power supply via the submount and/or heat sink. The other side of the laser bar is electrically coupled to the cathode of the power supply via a number of bond wires.
Fig. 6B is a side view of the laser device shown in fig. 6A. As shown, the laser bar is mounted on the submount and the submount is mounted on the hot side. As explained above, since the laser bar includes many emitters, the emitted laser light is combined with a collimating lens to form a desired laser beam. In a preferred embodiment, the collimating lens is a Fast Axis Collimating (FAC) lens characterized by a cylindrical shape.
Fig. 7 is a simplified diagram illustrating separately addressable laser packages according to an embodiment of the present invention. The laser bar includes a plurality of emitters separated by ridge structures. Each emitter is characterized by a width of about 90-200 μm, however, it should be understood that other dimensions are possible. Each laser emitter includes a pad for p-contact wire bonding. For example, the electrodes may be respectively coupled with the emitters so that the emitters may be selectively turned on and off. The separately addressable structure shown in fig. 7 provides a number of benefits. For example, if a laser bar with multiple emitters is not individually addressable, bending of the laser bar during manufacturing can be a problem, since many individual laser devices need to be good to enable the laser bar to pass through, and this means that the laser bar bend will be smaller than the individual emitter bends. In addition, providing a laser bar with single emitter addressability allows each emitter to be shielded. In some embodiments, a control module is electrically coupled to the lasers to separately control the means of the laser bar.
Fig. 8 is a simplified diagram illustrating a laser bar with a patterned bonding substrate according to an embodiment of the present invention. As shown, the laser device is characterized by a width of about 30 μm. Other widths are possible depending on the application. Laser emitters having a pitch less than about 90 μm are difficult to form wire bonds. In various embodiments, contacts are formed with a patterned adhesive substrate. For example, the patterned bond substrate allows widths as low as 10-30 μm.
Fig. 9(a) and 9(b) are simplified diagrams illustrating a laser bar configured with an optical combiner according to an embodiment of the present invention. As shown, the figure includes a package or housing for a plurality of emitters. Each device is constructed on a single ceramic, or on multiple chips on a ceramic, which is disposed on a common heat sink. As shown, the package includes all free optics coupling, collimators, mirrors, spatial or polarization multiplexing for free space output or refocusing in a fiber or other waveguide medium. As an example, the package has a small profile and may include a flat package ceramic multilayer or monolayer. The layer may comprise a copper, copper tungsten mount, e.g., butterfly package or covered CT sub-mount, Q sub-mount, etc. In one particular embodiment, the laser device is soldered on a CTE matched material (e.g., AlN, diamond compound) with low thermal resistance and the sub-assembly chip is formed on the ceramic. The sub-assembly chips are then assembled together on a second material with low thermal resistance, such as copper, including, for example, active cooling (i.e., simple water channels or micro-channels), or directly form the base of a package that is assembled with all connections, such as pins. The flat package is equipped with an optical interface, such as a window, free-space optics, connectors or fibers to direct the light generated, and an environmentally protective cover.
Fig. 10 is an example of a laser module coupled to an array of optical fibers. Each emitter from the laser bar is coupled in the fiber array through a Fast Axis Collimating (FAC) lens, respectively. In this configuration, the fiber is near the laser diode chip, typically within 0.2 to 10 mm.
Fig. 11 is an example of a laser module with a fiber bundle. After alignment by fast axis alignment (FAC) lens and fiber coupling, the fibers are bundled together at the ends. In this configuration, the fiber is located near the laser diode chip, typically within 0.5 to 10 mm.
Fig. 12 is an example of a laser module with a lens fiber. In this configuration, the laser diode is directly coupled with a lensed fiber, not including a Fast Axis Collimating (FAC) lens. In this configuration, the fiber is located near the laser diode chip, typically within 0.2 to 2 mm.
In one example, the present invention provides an alternative optical coupling technique that combines optical outputs from individual emitters or laser bars within an optical module. By first combining all optical outputs in one or more free-space laser beams using free-space optics, and then coupling the one or more free-space laser beams directly to the application, or to an optical fiber that will then be coupled to the application, the degrading mechanisms associated with direct fiber coupling will be avoided. In this configuration, the optical fiber is positioned in a remote location (10 to 100mm) with respect to the laser diode facet area. As a result, a free-space coupled optical module that emits blue or green light will have a longer lifetime to be able to operate reliably.
Fig. 13 is an example of a free-space laser combiner. In this configuration, the laser beam emitted from a well-positioned laser diode is collimated and coupled with free-space optics. The laser beam or beams are then focused into a remotely located optical guide, such as a fiber. This free space configuration keeps the fiber coupling away from the laser diode chip.
Fig. 14 is an example of a free-space mirror-based laser combiner. First, the respective laser beams are collimated by free space optics such as Fast Axis Collimation (FAC) and Slow Axis Collimation (SAC) lenses. Next, the collimated laser beam is made incident on a rotating mirror to change the direction of the laser beam by 90 degrees. This is done for an array of laser diode beams combined in a single beam and then coupled into an optical guide, such as a fiber.
FIG. 15 is an example of a closed free space laser module. The compact plug and play design is very flexible and easy to use.
Figure 16 shows the dependence of lifetime on the laser coupling scheme. By avoiding direct fiber coupling (solid line) by using the free space coupling (dashed line) approach, the degradation speed is strongly suppressed such that at output powers in excess of 5W, in excess of 10W, in excess of 30W, or in excess of 60W, less than 20% degradation is possible within 500 hours of operation time.
Fig. 17 is a simplified diagram of a module form factor according to an embodiment of the present invention. As shown, the figure illustrates how an optical module consisting of laser diode chips can drastically reduce the form factor and thickness TO a value smaller than that of conventional lamp-based light sources, even laser diodes based on TO-can (TO-can) arrays. This reduction in thickness may enable the production of smaller, more compact form factor CE products, such as display projectors. This smaller form factor is an unexpected result of our integration. Additional details of the present system may be found throughout the present specification.
In an alternative embodiment of the invention, a non-polar or semi-polar GaN-based laser diode is used in the module. Due to the alternate facet splitting planes in such non-polar/semi-polar orientation based lasers, and the possibility of waveguide design that does not include AlGaN cladding, such laser diodes are compatible with direct fiber coupling without the rapid degradation demonstrated by conventional c-plane devices.
In an alternative embodiment, the present invention provides an optical module device that combines the emission of N laser beams, where N is greater than 1. The optical assembly includes free-space optics that produce one or more free-space beams. The optical emission comprises blue emission in the wavelength range of 415nm to 485nm, and/or green emission in the wavelength range of 500nm to 560 nm. The optical module arrangement is included to operate at more than 5W, more than 20W, or more than 50W. The optical module device is characterized by an optical output power reduction of less than 20% over 500 hours when operated at a constant input current.
In some embodiments, the optical module provided by the present disclosure includes a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam. The laser diode device may include a device that emits electromagnetic spectrum in the violet region (390-430nm), blue region (430 nm-490 nm), green region (490 nm-560 nm), yellow region (560 nm-600 nm), or red region (625 nm-670 nm). The optical module may comprise a combination of laser diode devices emitting different parts of the electromagnetic spectrum. In some embodiments, the combination of laser diodes is selected to produce a combined output radiation having a desired wavelength distribution. In some embodiments, the combined output may be a white light output. The laser diode device may be based on different semiconductor technologies, for example, a gallium and nitrogen containing device or AlInGa, although other suitable technologies may also be used. In some embodiments, at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof. In some embodiments, at least some of the plurality of laser diode devices comprise AlInGaP laser diode devices configured to emit a laser beam characterized by red light emission having a wavelength ranging from 625nm to 670 nm.
In one particular embodiment, the package may be used in a variety of applications. These applications include power scaling (modularity possibilities), spectral broadening (selecting lasers with small wavelength shifts to obtain wider spectral characteristics). The application may also include multi-color monolithic integration, e.g., blue-blue, blue-green, RGB (red-blue-green), etc.
In one particular embodiment, the present laser device may be constructed on a variety of packages. As an example, the package includes a TO9 Can (Can), a TO56 Can, one or more flat packages, a CS submount, a G submount, a C submount, one or more microchannel cooled packages, and the like. In other examples, the multi-laser structure may have an operating power of 1.5W, 3W, 6W, 10W, and greater. In one example, the present optical device (including multiple emitters) is devoid of any optical combiner, which can result in inefficiencies. In other examples, an optical combiner may be included and configured with multiple emitter devices. Additionally, the plurality of laser devices (i.e., emitters) may be, inter alia, an array of laser devices configured on non-polar oriented GaN or semi-polar oriented GaN, or any combination thereof.
As used herein, the term GaN substrate is associated with group III nitride based materials, including GaN, InGaN, AlGaN, or other group III containing alloys, or compositions used as starting materials. Such starting materials include polar GaN substrates (i.e., substrates in which the surface of the largest area is nominally the (hk l) plane, where h ═ k ═ 0, and l is not zero), nonpolar GaN substrates (i.e., substrate materials that orient the surface of the largest area from the aforementioned polar orientation toward the (hk l) plane at an angle ranging from about 80 to 100 degrees, where l ═ 0, and at least one of h and k is not zero), or semipolar GaN substrates (i.e., substrate materials that orient the surface of the largest area from the aforementioned polar orientation toward the (hk l) plane at an angle ranging from about +0.1 to 80 degrees, or from 110 to 179.9 degrees, where l ═ 0, and at least one of h and k is not zero). Of course, there are other variations, modifications, and alternatives.
In other examples, the present apparatus may be operated in an environment that includes at least 150,000ppm oxygen. The laser device is substantially free of AlGaN or InAlGaN cladding layers. The laser device is substantially free of p-type AlGaN or p-type InAlGaN cladding layers. Each emitter includes a front face and a rear face, the front face being substantially free of coating. Each emitter comprises a front face and a rear face, the rear face comprising a reflective coating. In other examples, the apparatus also has a microchannel cooler thermally coupled to the substrate. The apparatus also has a submount characterized by a Coefficient of Thermal Expansion (CTE) associated with the substrate and the heat spreader. A submount is coupled to the substrate, the submount comprising an aluminum nitride material, BeO, diamond, synthetic diamond (composite diamond), or a combination thereof. In a particular embodiment, the substrate is bonded to a submount, which is characterized by a thermal conductivity of at least 200W/(mk). The substrate includes one or more plating regions. The one or more optical elements include a fast axis collimating lens. The laser device is characterized by a spectral width of at least 4 nm. In one particular example, the number of emitters, N, ranges between 3 and 15, 15 and 30, 30 and 50, and may be greater than 50. In other examples, each of the N emitters may produce an average output power of 25 to 50mW, 50 to 100mW, 100 to 250mW, 250 to 500mW, or 500 to 1000 mW. In one particular example, each of the N transmitters may produce an average output power greater than 1W. In one example, each of the N emitters is spaced from each other by 3 μm to 15 μm, or from 15 μm to 75 μm, or from 75 μm to 150 μm, or from 150 μm to 300 μm.
In yet another alternative specific embodiment, the present invention provides an optical device, for example, a laser. The device includes a gallium and nitrogen containing material having a surface region characterized by a semi-polar surface orientation within 5 degrees of one of (10-11), (10-1-1), (20-21), (20-2-1), (30-31), (30-3-1), (40-41), or (40-4-1) below. The device also has a first waveguide region configured in a first direction, which in one particular embodiment is a projection of a c-direction of a surface region overlying the gallium and nitrogen containing material. The device also has a second waveguide region coupled to the first waveguide region and configured in a second direction overlying the surface region of the gallium and nitrogen containing material. In a preferred embodiment, the second direction is different from the first direction and is substantially parallel to the a direction. In a preferred embodiment, the first and second waveguide regions are continuous and formed as a single continuous waveguide structure and are formed together during the manufacture of the waveguide. Of course, there are other variations, modifications, and alternatives.
In one example, the apparatus has a support composed of a copper material, an aluminum material, a silicon material, or a combination thereof. In one example, the microchannel cooler is thermally coupled to the support. In one example, a heat sink (heat spreader) is coupled between the support and the laser device.
In one example, a phosphor material is provided within the modular device, in particular optically coupled with the laser beam. In one example, the phosphor material optically interacts with a plurality of laser beams. The phosphor material operates in a reflective mode, a transmissive mode, a combination thereof, or the like. The phosphor material is positioned in the optical path coupled to an optical element or metal or other material. The phosphor material is thermally coupled to the support along a continuous thermal gradient toward a selected portion of the heat spreader region within a vicinity of the support. The device also has optical coupling of the plurality of laser beams to phosphor material external to the modular device. In one example, a plurality of laser beams are directed through optical fibers to couple with the phosphor material. The output beam is geometrically configured to optimize interaction with the phosphor, for example, to improve the efficiency of the phosphor conversion process. In one example, a phosphor material is coupled with a plurality of laser beams and a combiner to produce an output having a selected spatial pattern of maximum and minimum widths.
In one example, the apparatus has an electrical input interface configured to couple a radio frequency electrical input to a plurality of laser devices. The electrical input interface is configured to couple the logic signal to the plurality of laser devices.
In one example, the apparatus has a submount member characterized by a Coefficient of Thermal Expansion (CTE) associated with the support and the heat spreader. In one example, the submount member couples the N laser devices to the support. The submount member is made of a material comprising at least one of aluminum nitride, BeO, diamond, synthetic diamond, or a combination thereof. The N laser devices are coupled to the support with a submount member. In one example, the submount is glued to the support. In one example, the submount is characterized by a thermal conductivity of at least 200W/(mk). In one example, the laser device is thermally coupled directly to the support. In one example, at least a portion of the N laser devices are configured on a non-polar or semi-polar gallium and nitrogen containing directional surface region.
In one example, the non-polar or semi-polar oriented surface region is a semi-polar orientation characterized by a 20-21 or 20-2-1 plane. The laser band region covers the semipolar surface region; wherein the laser band area is oriented in projection in the c-direction. In one example, the non-polar or semi-polar oriented surface area is a non-polar orientation characterized by an m-plane, and the laser band area covers the non-polar surface area; wherein the laser band region is oriented in the c-direction. In one example, a plurality of laser beams are optically coupled in a plurality of optical fibers, respectively. A plurality of optical fibers are optically coupled to each other to combine the plurality of laser beams into at least one output beam. The output beam is coupled in an optical fiber. In one example, the output beam is characterized by a broad spectral width of at least 4 nm; wherein N ranges between 3 and 50 and the output beam is characterized by a narrow spectral width of less than 4 nm; wherein N ranges between 3 and 50. In one example, each of the N emitters produces an average output power of 10 to 1000 mW. In one example, each of the N transmitters produces an average output power of 1 to 5W. The optical module device is characterized by an output power of 10W and greater, 50W and greater, or 100W and greater, or 200W and greater or less, although variations are possible. In one example, a thermal impedance of less than 2 degrees celsius per watt of electrical input power is characterized by a thermal path from the laser device to the heat sink. In one example, the thermal impedance characteristic of less than 1 degree celsius per watt of electrical input power is the thermal path from the laser device to the heat sink. In one example, when the optical module apparatus is operated at a nominal output power (with a constant input current at a reference temperature of 25 ℃), a reduction in optical output power of less than 20% is provided within 2000 hours. In one example, when the optical module apparatus is operated at a rated output power (with a constant input current at a reference temperature of 25 ℃), a reduction in optical output power of less than 20% is provided within 5000 hours. Depending on the embodiment, the height is characterized by less than 7mm, or the height is characterized by less than 4mm, or the height is characterized by less than 2 mm.
In some embodiments, an optical module device includes a form factor characterized by a length, a width, and a height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1; a free space having a non-guiding characteristic capable of emitting a laser beam from each of the plurality of laser diode devices; and a combiner configured to receive a laser beam from each of the plurality of gallium and nitrogen containing laser diode devices and provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration, wherein: configuring the support to transfer thermal energy from the plurality of laser diode devices to a heat sink; the combiner includes free-space optics configured to produce one or more free-space beams; at least one laser beam is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by an operating optical output power of at least 5W; a thermal path from the plurality of laser diode devices to a heat sink characterized by a thermal impedance characterized by an electrical input power of less than 4 degrees Celsius per electrical watt; also, the optical module device is characterized by an optical output power reduction of less than 20% over 500 hours when the optical module device is operated within the optical output power (with constant input current at a reference temperature of 25 ℃).
In some embodiments of the optical module apparatus, at least some of the plurality of laser diode devices comprise AlInGaP laser diode devices configured to emit a laser beam characterized by red light emission having a wavelength ranging from 625nm to 665 nm.
In some embodiments, the optical module apparatus further comprises an electrical input interface configured to couple electrical input power to each of the plurality of laser diode devices.
In some embodiments of the optical module apparatus, the output power is from 5W to 200W.
In some embodiments of the optical module apparatus, each of the plurality of laser diode devices may operate in an environment comprising at least 150,000ppm oxygen; wherein each of the plurality of laser diode devices has substantially no efficiency reduction from oxygen over a period of time.
In some embodiments of the optical module apparatus, the support comprises a material selected from the group consisting of copper, aluminum, silicon, and any combination thereof.
In some embodiments, the optical module apparatus further comprises a microchannel cooler thermally coupled to the support.
In some embodiments, the optical module apparatus further comprises a heat sink coupled between the support and the plurality of laser devices.
In some embodiments, the optical module apparatus further comprises a phosphor material optically coupled to the output beam.
In some embodiments of the optical module apparatus, the phosphor material is configured to operate in a mode selected from the group consisting of a reflective mode, a transmissive mode, and a combination of a reflective mode and a transmissive mode.
In some embodiments of the optical module device, the phosphor material is coupled with the optical element or with the metal.
In some embodiments of the optical module apparatus, the phosphor material is thermally coupled to the support along a continuous thermal gradient toward a selected portion of the heat spreader region within a vicinity of the support.
In some embodiments, the optical module device further comprises an optical coupler configured to optically couple the plurality of laser beams with a phosphor material external to the module device.
In some embodiments of the optical module apparatus, the optical coupler includes one or more optical fibers.
In some embodiments of the optical module apparatus, the output beam is geometrically configured to optimize interaction with the phosphor material from a first efficiency to a second efficiency.
In some embodiments, the optical module apparatus further comprises a phosphor material coupled to the laser beam, and wherein the combiner is configured to provide an output beam characterized by a selected spatial pattern having a maximum width and a minimum width.
In some embodiments of the optical module apparatus, the electrical input interface is configured to couple the radio frequency electrical input with the plurality of laser diode devices.
In some embodiments of the optical module apparatus, the electrical input interface is configured to couple the logic signals to the plurality of laser diode devices.
In some embodiments, the optical module apparatus further includes a submount member characterized by a Coefficient of Thermal Expansion (CTE) coupled with the support and the heat spreader.
In some embodiments, the optical module apparatus further comprises one or more sub-mount members coupling the plurality of laser diode devices with the support.
In some embodiments of the optical module apparatus, the one or more submount members comprise a material selected from aluminum nitride, BeO, diamond, synthetic diamond, or any combination of the foregoing.
In some embodiments of the optical module apparatus, the one or more submount members are configured to couple the plurality of laser diode devices with a support.
In some embodiments, the optical module apparatus further comprises a submount attached to the support, the submount characterized by a thermal conductivity of at least 200W/(mk).
In some embodiments of the optical module apparatus, the plurality of laser diode devices are thermally coupled directly to the support.
In some embodiments of the optical module apparatus, at least a portion of the plurality of laser diode devices covers an oriented surface region selected from the group consisting of a non-polar gallium and nitrogen containing oriented surface region and a semi-polar gallium and nitrogen containing oriented surface region.
In some embodiments of the optical module apparatus, the oriented surface region is a semipolar orientation characterized by a {20-21} or a {20-2-1} plane; and, the laser band region covers the directional surface region; wherein the laser band area is oriented in projection in the c-direction.
In some embodiments of the optical module apparatus, the orientation surface region is a non-polar orientation characterized by an m-plane; and, the laser band area covers the orientation surface area, wherein the laser band area is oriented in the c-direction.
In some embodiments of the optical module apparatus, the free-space optics comprise a fast-axis collimating lens.
In some embodiments, the optical module device further comprises an optical fiber, wherein the output light beam is coupled in the optical fiber.
In some embodiments of the optical module apparatus, the output beam is characterized by a spectral width of at least 4nm, and N ranges from 3 to 50.
In some embodiments of the optical module apparatus, the output beam is characterized by a spectral width of less than 4nm, and N ranges from 3 to 50.
In some embodiments of the optical module apparatus, each of the plurality of laser diode devices emits a laser beam characterized by an average output power from 10mW to 1000 mW.
In some embodiments of the optical module apparatus, each of the plurality of laser diode devices emits a laser beam characterized by an average output power from 1W to 5W.
In some embodiments of the optical module apparatus, the output power is selected from 10W and greater, 50W and greater, and 100W and greater.
In some embodiments of the optical module apparatus, the thermal impedance is less than 2 degrees celsius per watt of electrical input power.
In some embodiments of the optical module apparatus, the thermal impedance is less than 1 degree celsius per watt of electrical input power.
In some embodiments of the optical module apparatus, when the optical module apparatus is operated within an output power (with a constant input current at a reference temperature of 25 ℃), the optical output power decreases by less than 20% within 2000 hours.
In some embodiments of the optical module device, when the optical module device is operated within an output power (with a constant input current at a reference temperature of 25 ℃), the optical output power decreases by less than 20% within 5000 hours.
In some embodiments, an optical module device includes a form factor characterized by a length, a width, and a height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1; a waveguide configured to emit laser beams from the plurality of laser optical devices; and a combiner configured to receive the laser beams from the plurality of laser diode devices and provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein: configuring the support to transfer thermal energy from the plurality of laser diode devices to a heat sink; at least one laser beam is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by an optical output power of at least 5W; and the thermal path from the laser device to the heat sink is characterized by a thermal impedance of less than 4 degrees celsius per electrical watt of input power.
In some embodiments, an optical module device includes a form factor characterized by a length, a width, and a height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising: a support member; a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium and nitrogen containing laser diode devices characterized by a non-polar or semi-polar oriented surface region and configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1; a laser band region covering the non-polar or semi-polar surface region; wherein each laser band region is oriented in the c-direction or a projection of the c-direction and is characterized by a first end and a second end; and a combiner configured to receive a plurality of laser beams of the N incident laser beams; a combiner for producing an output beam having a selected wavelength range, spectral width, power, and spatial configuration, wherein N is greater than 1; wherein the support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink; at least one laser beam is characterized by a polarization purity of greater than 60% and less than 100%; the output beam is characterized by a predetermined nominal operating optical output power range of at least 5W; and, the thermal path from the laser device to the heat sink is characterized by a thermal impedance of less than 4 degrees celsius per electrical watt of input power.
While the above is a complete description of the specific embodiments, various modifications, alternative constructions, and equivalents may be used. Accordingly, the above description and illustrations should not be taken as limiting the scope of the invention, which is defined by the appended claims.
Claims (29)
1. An optical module apparatus comprising a form factor characterized by a length, a width, and a height, the apparatus comprising:
a support member;
a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; wherein at least some of the plurality of laser diode devices comprise gallium-or nitrogen-containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1;
a free space having a non-guiding characteristic capable of emitting a laser beam from each of the plurality of laser diode devices; and
a combiner configured to receive a laser beam from each of a plurality of gallium-or nitrogen-containing laser diode devices and provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration, wherein:
the support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink;
the combiner includes free-space optics configured to produce one or more free-space beams;
a thermal path from the plurality of laser diode devices to the heat sink is characterized by a thermal impedance.
2. The apparatus of claim 1 wherein at least some of the plurality of laser diode devices comprise AlInGaP laser diode devices configured to emit a laser beam characterized by red light emissions having a wavelength ranging from 625nm to 665 nm.
3. The apparatus of claim 1, further comprising an electrical input interface configured to couple an electrical input power to each of the plurality of laser diode devices.
4. The apparatus of claim 1, wherein the support comprises a material selected from copper, aluminum, or silicon.
5. The apparatus of claim 1, further comprising a microchannel cooler thermally coupled to the support.
6. The apparatus of claim 1, further comprising a heat sink coupled between the support and the plurality of laser devices.
7. The apparatus of claim 1, further comprising a phosphor material optically coupled to the output beam.
8. The apparatus of claim 7, wherein the phosphor material is configured to operate in a mode selected from a reflective mode, a transmissive mode, and a combination of a reflective mode and a transmissive mode.
9. The apparatus of claim 7, wherein the phosphor material is coupled with an optical element or with a metal.
10. The apparatus of claim 7, wherein the phosphor material is thermally coupled to the support along a continuous thermal gradient toward a selected portion of the heat spreader region within a vicinity of the support.
11. The apparatus of claim 1, further comprising an optical coupler configured to optically couple the plurality of laser beams with a phosphor material external to the modular device.
12. The apparatus of claim 11, wherein the optical coupler comprises one or more optical fibers.
13. The apparatus of claim 1 wherein the output beam is geometrically configured to optimize interaction with the phosphor material from a first efficiency to a second efficiency.
14. The apparatus of claim 1, further comprising:
a phosphor material coupled with the laser beam; and is
Wherein the combiner is configured to provide an output beam characterized by a selected spatial pattern having a maximum width and a minimum width.
15. The apparatus of claim 3, wherein the electrical input interface is configured to couple a radio frequency electrical input to the plurality of laser diode devices.
16. The apparatus of claim 3, wherein the electrical input interface is configured to couple logic signals to the plurality of laser diode devices.
17. The apparatus of claim 1, further comprising a submount member characterized by a coefficient of thermal expansion coupled with the support and the heat spreader.
18. The apparatus of claim 1, further comprising one or more sub-support members coupling the plurality of laser diode devices with the support.
19. The apparatus of claim 18, wherein the one or more submount members comprise a material selected from aluminum nitride, BeO, diamond, or synthetic diamond.
20. The apparatus of claim 18, wherein the one or more submount members are configured to couple the plurality of laser diode devices with the support.
21. The apparatus of claim 1, further comprising a submount attached to the support, the submount characterized by a thermal conductivity of at least 200W/(mk).
22. The apparatus of claim 1, wherein the plurality of laser diode devices are directly thermally coupled to the support.
23. The apparatus of claim 1, wherein at least a portion of the plurality of laser diode devices cover an oriented surface region selected from the group consisting of a non-polar gallium or nitrogen containing oriented surface region and a semi-polar gallium or nitrogen containing oriented surface region.
24. The apparatus of claim 23,
the oriented surface region is a semipolar orientation characterized by a {20-21} or a {20-2-1} plane; and is
A laser band region overlying the directional surface region; wherein the laser band region is oriented in a projection in the c-direction.
25. The apparatus of claim 23,
the orientation surface region is a non-polar orientation characterized by an m-plane; and is
A laser tape region covers the orientation surface region, wherein the laser tape region is oriented in the c-direction.
26. The apparatus of claim 1, wherein the free-space optics comprise a fast-axis collimating lens.
27. The apparatus of claim 1, further comprising an optical fiber, wherein the output beam is coupled in the optical fiber.
28. An optical module apparatus comprising a form factor characterized by a length, a width, and a height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising:
a support member;
a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; it is characterized in that the preparation method is characterized in that,
at least some of the plurality of laser diode devices comprise gallium-or nitrogen-containing laser diode devices configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1;
a waveguide configured to emit laser beams from the plurality of laser optical devices; and
a combiner configured to receive the laser beams from the plurality of laser diode devices and provide an output beam characterized by a selected wavelength range, a selected spectral width, a selected power, and a selected spatial configuration; wherein,
the support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink;
at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%;
the output beam is characterized by an optical output power of at least 5W; and
the thermal path from the laser device to the heat sink is characterized by a thermal impedance of less than 4 degrees celsius per electrical watt of input power.
29. An optical module apparatus comprising a form factor characterized by a length, a width, and a height; the height is characterized by a dimension less than 11mm and greater than 1mm, the apparatus comprising:
a support member;
a plurality of laser diode devices numbered from 1 to N overlying the support, each of the plurality of laser diode devices configured to emit a laser beam; it is characterized in that the preparation method is characterized in that,
at least some of the plurality of laser diode devices comprise gallium-or nitrogen-containing laser diode devices characterized by a non-polar or semi-polar directional surface area and configured to emit a laser beam characterized by an emission selected from the group consisting of blue light emission having a wavelength ranging from 415nm to 485nm, green light emission having a wavelength ranging from 500nm to 560nm, and combinations thereof; and wherein N is greater than 1;
a laser band region covering the non-polar or semi-polar surface region; wherein each laser band region is oriented in a c-direction or a projection of the c-direction and is characterized by a first end and a second end; and
a combiner configured to receive a plurality of laser beams of the N incident laser beams; the combiner is for producing an output beam having a selected wavelength range, spectral width, power, and spatial configuration, wherein N is greater than 1; wherein
The support is configured to transfer thermal energy from the plurality of laser diode devices to a heat sink;
at least one of the laser beams is characterized by a polarization purity of greater than 60% and less than 100%;
said output beam characterized by a predetermined nominal operating optical output power range of at least 5W; and is
The thermal path from the laser device to the heat sink is characterized by a thermal impedance of less than 4 degrees celsius per electrical watt of input power.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/732,233 US9025635B2 (en) | 2011-01-24 | 2012-12-31 | Laser package having multiple emitters configured on a support member |
| US13/732,233 | 2012-12-31 |
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| Publication Number | Publication Date |
|---|---|
| CN203967503U true CN203967503U (en) | 2014-11-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320891549.5U Expired - Lifetime CN203967503U (en) | 2012-12-31 | 2013-12-31 | Optical module equipment |
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| Country | Link |
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| CN (1) | CN203967503U (en) |
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