CN203966703U - Ceramic thermal resistance - Google Patents
Ceramic thermal resistance Download PDFInfo
- Publication number
- CN203966703U CN203966703U CN201420176326.5U CN201420176326U CN203966703U CN 203966703 U CN203966703 U CN 203966703U CN 201420176326 U CN201420176326 U CN 201420176326U CN 203966703 U CN203966703 U CN 203966703U
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- CN
- China
- Prior art keywords
- ceramic
- outer electrode
- electrode
- nickel film
- thermal resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000919 ceramic Substances 0.000 title claims abstract description 73
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 43
- 239000002245 particle Substances 0.000 claims abstract description 18
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000005245 sintering Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910003322 NiCu Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 150000002815 nickel Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000005524 ceramic coating Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
The utility model provides a kind of ceramic thermal resistance that can alleviate the stress that nickel film has.Ceramic thermal resistance (1) comprising: ceramic matrix (2); Be arranged on the 1st outer electrode (3a) and the 2nd outer electrode (3b) on the surperficial diverse location of ceramic matrix (2); And relative in ceramic matrix (2), and the 1st internal electrode (22b, 22d) and the 2nd internal electrode (22a, 22c) that engage with the 1st outer electrode (3a) and the 2nd outer electrode (3b).The 1st outer electrode (3a) and the 2nd outer electrode (3b) comprise the m by 1.02[μ] nickel of following particle diameter the 1st nickel film (5a) and the 2nd nickel film (5b) that form.
Description
Technical field
The utility model relates to and at least comprises ceramic body, is arranged on multiple outer electrodes on ceramic body surface and is arranged on the ceramic thermal resistance (being designated hereinafter simply as thermistor) of multiple internal electrodes of ceramic body inside.
Background technology
In the past, as this thermistor, for example, there is the stacked positive temperature coefficient thermis that patent documentation 1 is recorded.In this stacked positive temperature coefficient thermis, be formed with outer electrode in two ends of ceramic body.
Ceramic body is by alternately carrying out stacked making by the multiple semiconductor ceramic coatings that contain BaTiO3 and semiconductor catalyst and multiple internal electrode.
Each outer electrode comprises the basal electrode being electrically connected with the internal electrode of specified quantity.Be formed with nickel plated film on the surface of each basal electrode, be further formed with Sn plated film on the surface of this nickel plated film.
Prior art document
Patent documentation
Patent documentation 1: No. 2008/123078 communique of International Publication
Utility model content
Utility model technical problem to be solved
As also illustrated for example in patent documentation 1, in ceramic thermal resistance, generally on basal electrode, implement nickel plating.But nickel plating has relatively large stress (being more specifically tensile stress), therefore, from the marginal portion of outer electrode, to ceramic body, effect has relatively large load.Under the effect of this load, in internal electrode, produce stress, sometimes in internal electrode, can produce crack.Such crack produces larger impact to the characteristic of thermistor.
Therefore, the purpose of this utility model is to provide a kind of ceramic thermal resistance that can alleviate the stress that nickel film has.
The technical scheme that technical solution problem adopts
To achieve these goals, an aspect of the present utility model is ceramic thermal resistance, and it comprises: ceramic matrix; Be arranged on the 1st outer electrode and the 2nd outer electrode on the diverse location on described ceramic matrix surface; And relative in described ceramic matrix, and the 1st internal electrode and the 2nd internal electrode that engage with described the 1st outer electrode and described the 2nd outer electrode.Described the 1st outer electrode and described the 2nd outer electrode comprise the m by 1.02[μ] nickel of following particle diameter the 1st nickel film and the 2nd nickel film that form.
The effect of utility model
According to above-mentioned aspect, can alleviate the stress that nickel film has.
Brief description of the drawings
Fig. 1 is the figure that represents the longitudinal cross-section of the product that complete of ceramic thermal resistance.
Fig. 2 is the curve chart that represents the relation of the particle diameter of breakdown strength and nickel film.
Embodiment
" beginning "
Below, first define before the L axle shown in Fig. 1, W axle, T axle at the related ceramic thermal resistance (being designated hereinafter simply as thermistor) of an explanation execution mode of the present utility model.L axle, W axle and T axle are orthogonal, represent left and right directions (laterally), fore-and-aft direction (longitudinally) and the above-below direction (thickness direction) of ceramic thermal resistance 1.T axle also represents multiple ceramic sheet materials 21 to carry out stacked direction.
" structure of ceramic thermal resistance "
In Fig. 1, thermistor 1 has for example 1005 sizes etc., predetermined size on L axle, W axle and T direction of principal axis.This thermistor 1 comprises that as basic structure ceramic matrix 2, two become a pair of the 1st outer electrode 3a and the 2nd outer electrode 3b.
Ceramic matrix 2 has approximate rectangular shape relatively long on L direction of principal axis.The in the situation that of 1005 size, L direction of principal axis length is roughly 1.0[mm], W direction of principal axis width is roughly 0.5[mm].T direction of principal axis thickness can be determined arbitrarily, for example, be 0.5[mm].Such ceramic matrix 2 comprises multiple ceramic sheet materials 21 and multiple internal electrode 22.
Each ceramic sheet material 21 is for example made up of the ceramic material (with reference to " example of thermistor manufacture method " hereinafter described) with positive temperature coefficient.Multiple ceramic sheet materials 21 carry out stacked on T direction of principal axis.In the present embodiment, as multiple ceramic sheet materials 21, show for example 5 ceramic sheet material 21a～21e are carried out stacked from negative direction one side of T axle towards positive direction one side according to the order of recording herein.In addition, in Fig. 1, utilize dotted line to show virtually the interface of two ceramic sheet materials 21 adjacent on T direction of principal axis.
Each internal electrode 22 by can with pottery well ohm engages and be difficult to be oxidized metal material (for example Ni) be made.In addition,, while overlooking from T direction of principal axis (when observing from above), each internal electrode 22 has rectangular shape longer on left and right directions.
In the present embodiment, as an example of multiple internal electrodes 22, comprise: two the 1st internal electrode 22b, 22d; And two the 2nd internal electrode 22a, 22c.
Internal electrode 22b is formed between ceramic sheet material 21b and 21c adjacent on above-below direction.More specifically, the left side of internal electrode 22b does not have plane difference and aligns in fact with the left side of ceramic sheet material 21b, 21c.,, in order to be electrically connected with the 1st outer electrode 3a, expose between ceramic sheet material 21b and the left side of 21c the left side of internal electrode 22b.On the contrary, the right side of internal electrode 22b, front end face and rear end face do not expose between ceramic sheet material 21b and 21c.
Internal electrode 22d by internal electrode 22b is obtained towards top parallel, is formed between ceramic sheet material 21d and 21e in fact.
Internal electrode 22a is formed between ceramic sheet material 21a and 21b.More specifically, align in fact with the right side of ceramic sheet material 21a, 21b in the right side of internal electrode 22a, and in order to be electrically connected with the 2nd outer electrode 3b, between ceramic sheet material 21a and the right side of 21b, expose.On the other hand, the left side of internal electrode 22a, front end face and rear end face do not expose between ceramic sheet material 21a and 21b.
Internal electrode 22c by internal electrode 22a is obtained towards top parallel, is formed between ceramic sheet material 21c and 21d in fact.
The 1st outer electrode 3a comprises the 1st basal electrode 4a, the 1st nickel film 5a, the 1st tin film 6a.Basal electrode 4a carries out sputter by NiCr, NiCu, Ag according to the order of recording by the left side at ceramic matrix 2 herein and is formed.Nickel film 5a is by electroplating film forming on the surface of basal electrode 4a.In this nickel film 5a, the particle diameter of nickel is 1.02[μ m] below.
Tin film 6a is by electroplating film forming on the surface of nickel film 5a.
The 2nd outer electrode 3b comprises basal electrode 4a, nickel film 5a and symmetrical in fact the 2nd basal electrode 4b of tin film 6a, the 2nd nickel film 5b and the 2nd tin film 6b with the 1st outer electrode 3a.On the surface of ceramic matrix 2, this outer electrode 3b and outer electrode 3a arrange discretely.
" example of ceramic thermal resistance manufacture method "
Above-mentioned thermistor 1 is mainly formed by the 1st operation～8th operation manufacture hereinafter described.
The 1st operation as described below.Initiation material (, base raw material) to ceramic matrix 2 weighs to meet following formula (1), is then in harmonious proportion.
（Ba
0.998Sm
0.002）TiO
3…（1）
In addition, in above formula (1), also can change to other rare earth element such as La, Nd as the Sm of semiconductor catalyst.
In ensuing the 2nd operation, pure water is added in the 1st operation in load weighted powder.The powder that has added pure water carries out mixing and the pulverizing of 16 hours together with zirconia ball grinding machine, then makes it dry.This crushed material is carried out to the presintering of 2 hours at about 1100 DEG C, obtain thus presintering powder.
In ensuing the 3rd operation, organic bond, dispersant and water are added in the presintering powder obtaining in the 2nd operation.They are carried out together with zirconia ball grinding machine to the mixing of a few hours, obtain thus ceramic size.The skill in using a kitchen knife in cookery etc. is scraped in utilization makes this ceramic size be configured as sheet, then makes it dry.Consequently, acquisition will become the ceramic green sheet of ceramic sheet material 21.The thickness of this sheet material is for example about 40[μ m].
In ensuing the 4th operation, Ni metal dust and organic bond are disperseed in organic solvent, thus, generate Ni internal electrode conductive paste.Use this conductive paste to carry out silk screen printing, printed patterns on the interarea of ceramic green sheet thus, taking thickness after obtaining sintering as 0.50[μ m]～2.0[μ m] internal electrode 22.By the 4th operation, can obtain patterned ceramic green sheet.
In ensuing the 5th operation, figuratum being with of specified quantity ceramic green sheet is carried out stacked, and carry out crimping.Then,, by having carried out ceramic green paster stacked and that sheet cutting crimping is given size, then fire.
In ensuing the 6th operation, the ceramic green paster obtaining is carried out in atmosphere to the ungrease treatment of approximately 12 hours in above-mentioned the 5th operation at approximately 300 DEG C.Afterwards, under the reducing atmosphere of N2/H2, the raw paster that has completed ungrease treatment is fired 2 hours at the temperature of 1180 DEG C～1240 DEG C.Thus, obtain ceramic post sintering base substrate.
In ensuing the 7th operation, after the ceramic post sintering base substrate that obtains in above-mentioned the 6th operation grinds through cylinder, be immersed in the glass solution of silica system and carry out after-baking, thus, form glassivation on sintered body surface.Then, further ceramic post sintering base substrate is reoxidized.
In ensuing the 8th operation, carry out sputter at two of the left and right end face that has completed the ceramic post sintering base substrate reoxidizing according to the order of NiCr, NiCu, Ag, thereby form outer electrode 3a, 3b.Finally, utilize and electroplate the film forming of on the surface of outer electrode 3a, 3b, nickel plated film being carried out approximately 30 minutes, thereby form nickel film 5a, 5b.Herein, the thickness of nickel film 5a, 5b is 3.0[μ m].In addition, the particle diameter of nickel film 5a, 5b is 1.02[μ m] below, its surface roughness Ra is 1.98[μ m] below.The electric current that applies when this particle diameter is electroplated by adjusting is controlled.
Then, utilize to electroplate to make tin plated film carry out film forming on the surface of nickel film 5a, 5b, thereby form tin film 6a, 6b.
Complete thermistor 1 by above eight operations.
" effect of ceramic thermal resistance, effect "
For the effect of clear and definite above thermistor 1, present inventor has made three kinds of different evaluation test specimen No.1～No.3 of particle diameter of nickel film.In test specimen No.1～No.3, particle diameter and the surface roughness of nickel film differ from one another, but structure is in addition identical.For concrete particle diameter and surface roughness, test specimen No.1 is 1.56[μ m] and 2.67[μ m].Table 1 has been recorded the situation of other test specimen.In addition, as the assay method of particle diameter, show for example the method for utilizing scanning electron microscopy (SEM) with × 5000 multiplying power, each test specimen to be observed.
[table 1]
Table 1: number occurs the crack with respect to particle diameter
Present inventor has implemented curved substrate test (JIS C60068-2-21) to each test specimen of made.Particularly, utilize scolder etc. that each test specimen is installed on circuit substrate, then, this circuit substrate is carried out to deflection until produce crack in the test specimen of installing.Deflection is now measured as the breakdown strength of every kind of test specimen No.Table 2 shows its result.Can find according to Fig. 2, along with the particle diameter of nickel film 5a, 5b reduces, the deflection (breakdown strength) while producing crack increases.Even in order to ensure at 3[mm] more than also can not there is the breakdown strength of the degree in crack, the particle diameter of nickel film 5a, 5b is defined as 1.02[μ m by present inventor] below.Herein, for 3[mm] above this fiducial value, in curved substrate test, require 1[mm] the bending degree of depth, considered that for above-mentioned requirements value surplus etc. sets.
In addition, present inventor uses scolder that each test specimen of making gained is installed on circuit substrate, and has implemented under the following conditions low temperature and intermittently tested.
Test temperature :-40[DEG C]
Test voltage (the maximum voltage that ensures): 16[V]
ON time: 1[min]
Opening time: 2[min]
Test cycle number of times: 3000
Implement the quantity (wherein, for every kind of test specimen No) of the interrupted test of low temperature: 80
After the interrupted test of above-mentioned low temperature, present inventor has measured the slit generation number in 80 test specimens for every kind of test specimen No.Consequently, the particle diameter that makes nickel film 5a, 5b if confirmed is 1.02[μ m] below, generation number in crack is 0.
And present inventor uses scolder that each test specimen of making gained is installed on circuit substrate, and has implemented thermal shock test under the following conditions.
Test temperature (low temperature one side) :-40[DEG C]
Test temperature (high temperature one side): 150[DEG C]
Be exposed to the retention time in high temperature, lower-temperature atmosphere: to each 30[min]
Test cycle number of times: 3000
Implement the quantity (wherein, for every kind of test specimen No) of thermal shock test: 80
After above-mentioned thermal shock test, present inventor has measured the slit generation number in 80 test specimens for every kind of test specimen No.Consequently, the particle diameter that makes nickel film 5a, 5b if confirmed is 1.02[μ m] below, generation number in crack is 0.
As described above, if the particle diameter of nickel film 5a, 5b is 1.02[μ m] below, distortion reduces, and therefore, can alleviate the stress that nickel film 5a, 5b have.Consequently, even the circuit substrate that ceramic thermal resistance 1 has been installed is carried out to larger deflection, crack can not occur in internal electrode 22 yet, and crack generation number in the interrupted test of low temperature and thermal shock test is also 0.
" remarks item "
In addition, in the above embodiment, the ceramic thermal resistance 1 with positive temperature characterisitic is illustrated.But, be not limited to this, also can adopt same nickel film thickness to the ceramic thermal resistance with negative temperature characterisitic.
In addition in the above embodiment, be 3.0[μ m to the thickness of nickel film 5a, 5b ,] situation be illustrated.But, be not limited to this, as following typically shown in, nickel film thickness can be also other value.For example, be 0.23[μ m at nickel film thickness], 3.51[μ m], 23.22[μ m] in the situation that, the particle diameter of nickel film is 0.31[μ m], 0.52[μ m], 0.54[μ m], also can play the effect same with above-mentioned execution mode.
Industrial practicality
Being difficult to produce crack, this has advantage to the related ceramic thermal resistance of the utility model on the one hand, is applicable to vehicle-mounted purposes etc.
Label declaration
1 ceramic thermal resistance
2 ceramic matrixs
21 ceramic sheet materials
22 internal electrodes
3a, 3b outer electrode
5a, 5b nickel film.
Claims (1)
1. a ceramic thermal resistance, is characterized in that, comprising:
Ceramic matrix;
Be arranged on the 1st outer electrode and the 2nd outer electrode on the diverse location on described ceramic matrix surface; And
Relative in described ceramic matrix, and the 1st internal electrode and the 2nd internal electrode that engage with described the 1st outer electrode and described the 2nd outer electrode,
Described the 1st outer electrode and described the 2nd outer electrode comprise the 1st nickel film and the 2nd nickel film that are made up of the nickel of the particle diameter below 1.02 μ m.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013134584A JP2015012052A (en) | 2013-06-27 | 2013-06-27 | Ceramic thermistor |
| JP2013-134584 | 2013-06-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203966703U true CN203966703U (en) | 2014-11-26 |
Family
ID=51927257
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420176326.5U Expired - Lifetime CN203966703U (en) | 2013-06-27 | 2014-04-11 | Ceramic thermal resistance |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2015012052A (en) |
| CN (1) | CN203966703U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110945605A (en) * | 2017-10-11 | 2020-03-31 | 松下知识产权经营株式会社 | Method for manufacturing laminated electronic component |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4106813B2 (en) * | 1999-06-15 | 2008-06-25 | 三菱マテリアル株式会社 | Chip-type electronic components |
| JP2002280249A (en) * | 2001-03-22 | 2002-09-27 | Tdk Corp | Stacked ceramic electric component |
| TW200903527A (en) * | 2007-03-19 | 2009-01-16 | Murata Manufacturing Co | Laminated positive temperature coefficient thermistor |
| JP5526908B2 (en) * | 2010-03-24 | 2014-06-18 | 株式会社村田製作所 | Multilayer electronic components |
| JP5304757B2 (en) * | 2010-09-06 | 2013-10-02 | Ｔｄｋ株式会社 | Ceramic laminated PTC thermistor |
-
2013
- 2013-06-27 JP JP2013134584A patent/JP2015012052A/en active Pending
-
2014
- 2014-04-11 CN CN201420176326.5U patent/CN203966703U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110945605A (en) * | 2017-10-11 | 2020-03-31 | 松下知识产权经营株式会社 | Method for manufacturing laminated electronic component |
| US11387023B2 (en) | 2017-10-11 | 2022-07-12 | Panasonic Intellectual Property Management Co., Ltd. | Multilayer electronic component production method |
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| Publication number | Publication date |
|---|---|
| JP2015012052A (en) | 2015-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141126 |
|
| CX01 | Expiry of patent term |