CN203936755U - A kind of thin slice automatic measuring thickness device for annular polishing machine - Google Patents
A kind of thin slice automatic measuring thickness device for annular polishing machine Download PDFInfo
- Publication number
- CN203936755U CN203936755U CN201420274094.7U CN201420274094U CN203936755U CN 203936755 U CN203936755 U CN 203936755U CN 201420274094 U CN201420274094 U CN 201420274094U CN 203936755 U CN203936755 U CN 203936755U
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- China
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- column
- balladeur train
- polishing machine
- silicon wafer
- thin slice
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Abstract
The utility model discloses a kind of thin slice automatic measuring thickness device for annular polishing machine, comprise reference disk, balladeur train, axle sleeve, stage clip, adjusting nut, amesdial, column, fixed head, column is fixed on reference disk through balladeur train; In the hole that column contacts with balladeur train, axle sleeve is housed; The column that is positioned at slide block top is arranged with stage clip outward, and stage clip top is provided with adjusting nut, and column upper end is fixedly connected with fixed head by nut, described amesdial with determine plate together and be fixedly connected with.The two sides depth of parallelism that the utility model has solved polished silicon wafer is not affected by blank, and under equipment running status, polished silicon wafer thickness is monitored at any time, automatically measure the thickness of polished silicon wafer, and polish pressure is adjustable arbitrarily.
Description
Technical field
The utility model relates to a kind of thin slice automatic measuring thickness device for annular polishing machine.
Background technology
At present, domestic widely used polishing machine is divided into two classes: single side polishing machine and Twp-sided polishing machine.Single side polishing machine divides again manually and is automatic.Automatically single side polishing machine is divided into according to polished silicon wafer movement locus on polishing disk: cycloid polishing machine and annular polishing machine.Polished silicon wafer, can attenuate and reduction surface roughness after above-mentioned various polishing machine polishings.The polishing of every dish monolithic, the two sides depth of parallelism of polished silicon wafer is constant; If the polishing simultaneously of every dish multi-disc, while only having blank thickness high conformity, could increase to the two sides depth of parallelism of polished silicon wafer.In order to solve the two sides depth of parallelism of polished silicon wafer, not affected by blank, and under equipment running status, polished silicon wafer thickness is monitored at any time, automatically measure the thickness of polished silicon wafer, the any adjustable series of problems that waits of polish pressure, the applicant has developed a kind of and matching used device one thin slice automatic measuring thickness device of annular polishing machine.
Utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of thin slice automatic measuring thickness device for annular polishing machine is provided.
The utility model technical scheme adopting of dealing with problems is:
A thin slice automatic measuring thickness device for annular polishing machine, comprises reference disk, balladeur train, axle sleeve, stage clip, adjusting nut, amesdial, column, fixed head, and column is fixed on reference disk through balladeur train; In the hole that column contacts with balladeur train, axle sleeve is housed; The column that is positioned at slide block top is arranged with stage clip outward, and stage clip top is provided with adjusting nut, and column upper end is fixedly connected with fixed head by nut, described amesdial with determine plate together and be fixedly connected with.
Further setting as such scheme: the A face of described column axis vertical reference dish.
Further setting as such scheme: the hole on described balladeur train and axle sleeve axis are perpendicular to the B face of balladeur train.
Further setting as such scheme: described column has 3, is separately positioned on left part, middle part, the right part of reference disk.
The beneficial effects of the utility model are:
The two sides depth of parallelism that the utility model has solved polished silicon wafer is not affected by blank, and under equipment running status, polished silicon wafer thickness is monitored at any time, automatically measure the thickness of polished silicon wafer, and polish pressure is adjustable arbitrarily.
Accompanying drawing explanation
Fig. 1 is the utility model structural representation;
Schematic diagram when Fig. 2 is the utility model duty.
The specific embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in further detail.
As shown in Figure 1, the utility model is mainly comprised of parts such as reference disk 9, balladeur train 8, axle sleeve 7, stage clip 6, adjusting nut 5, amesdial 4, column 3, fixed heads 2.Three root posts 3 are fixed on reference disk 9; In three holes 14 on balladeur train 8, axle sleeve 7 is housed, can on three columns 3, slides up and down; On every root post 3, there are stage clip 6 and adjusting nut 5, the adjusting nut 5 that turns clockwise, stage clip 6 is out of shape by compression, and elastic force increases, and on the contrary, while being rotated counterclockwise adjusting nut 5, stage clip 6 elastic force reduce.By fixed head 2 and nut l, three root posts 3 are linked together.Amesdial 4 is fixed on fixed head 2, and gauge outfit contacts with balladeur train 8 upper surfaces.The A face of column 3 axis vertical reference dishes 9, three holes 14 on balladeur train 8 and axle sleeve 7 axis are perpendicular to the B face of balladeur train 8.Therefore, by the element precision of this structure, guaranteed the depth of parallelism on A, B two sides.Polished silicon wafer sticks on the B face of balladeur train 8.Below polished silicon wafer, contact with the burnishing surface of polishing disk 10 with the A face of reference disk 9.
During work, three these devices of cover are distributed on an annulus 11 of polishing disk 10 (seeing Fig. 2).Every covering device is by two rollers, 13 location.When polishing disk 10 rotates, on annulus 11, the linear velocity at different radii place is different, and radius is larger, and linear velocity is larger.This device rotates under the effect of the different linear velocities in medial and lateral, and such movement locus can make polished silicon wafer obtain uniform polish.Meanwhile, 9 pairs of polishing disks of reference disk 10 also have reconditioning effect, make polishing disk 10 remain good flatness, have improved flatness and the surface quality of polished silicon wafer.Before polishing, polished silicon wafer will stick on the B face of balladeur train 8 securely, and adhesive layer thickness should be even, makes polished silicon wafer upper surface parallel with B face.The A face of reference disk 9, polished silicon wafer below and the burnishing surface of polishing disk 10 in same plane.Because the structure of this device has guaranteed the depth of parallelism on A, B two sides, also just guaranteed the depth of parallelism of polished silicon wafer.This device can be adjusted the polish pressure acting in polished silicon wafer.Adjust adjusting nut 5, change stage clip 6 pretightning force sizes, also just changed balladeur train 8 and acted on the polish pressure (polish pressure equals elastic force and balladeur train 8 gravity sums) in polished silicon wafer.Install after polished silicon wafer, this device is placed on polishing disk 10, adjust amesdial 4 height, should make amesdial 4 total indicator readings be greater than the attenuate amount of polished silicon wafer.At polishing process pointer reading, constantly reduce, when the initial reading of amesdial 4 pointers deducts current reading and equals attenuate amount, polishing process finishes.
The utility model not only can be measured the thickness of polished silicon wafer automatically. simultaneously. also protect the two sides depth of parallelism of having levied polished silicon wafer; Polishing disk 10 has just obtained reconditioning when work is done; Polish pressure can wither.This device is not only applicable to annular polishing machine, can be used for the annular abrasion machine that attenuate amount is less than 1mm (measurement category of amesdial 4 is 1mm) yet.
The above is only preferred embodiment of the present utility model; should be understood that; for those skilled in the art; do not departing under the prerequisite of the utility model principle; can also carry out some improvement and modification to the utility model, these improvement and modification also fall in the protection domain of the utility model claim.
Claims (4)
1. the thin slice automatic measuring thickness device for annular polishing machine, it is characterized in that: comprise reference disk (9), balladeur train (8), axle sleeve (7), stage clip (6), adjusting nut (5), amesdial (4), column (3), fixed head (2), column (3) is fixed on reference disk (9) through balladeur train (8), in the hole (14) that this column (3) contacts with balladeur train (8), axle sleeve (7) is housed, be positioned at the outer stage clip (6) that is arranged with of column (3) of slide block (8) top, stage clip (6) top is provided with adjusting nut (5), column (3) upper end is fixedly connected with fixed head (2) by nut (1), described amesdial (4) is fixedly connected with determining plate (2).
2. a kind of thin slice automatic measuring thickness device for annular polishing machine according to claim 1, is characterized in that: the A face of described column (3) axis vertical reference dish (9).
3. a kind of thin slice automatic measuring thickness device for annular polishing machine according to claim 1, is characterized in that: the hole (14) on described balladeur train (8) and axle sleeve (7) axis are perpendicular to the B face of balladeur train (8).
4. a kind of thin slice automatic measuring thickness device for annular polishing machine according to claim 1, is characterized in that: described column (3) has 3, is arranged at respectively on the San Ge position, left, center, right of reference disk (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420274094.7U CN203936755U (en) | 2014-05-26 | 2014-05-26 | A kind of thin slice automatic measuring thickness device for annular polishing machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420274094.7U CN203936755U (en) | 2014-05-26 | 2014-05-26 | A kind of thin slice automatic measuring thickness device for annular polishing machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203936755U true CN203936755U (en) | 2014-11-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420274094.7U Expired - Fee Related CN203936755U (en) | 2014-05-26 | 2014-05-26 | A kind of thin slice automatic measuring thickness device for annular polishing machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203936755U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104924194A (en) * | 2015-06-08 | 2015-09-23 | 中北大学 | Device for chemically-mechanically grinding and thinning crystals and use method of device |
-
2014
- 2014-05-26 CN CN201420274094.7U patent/CN203936755U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104924194A (en) * | 2015-06-08 | 2015-09-23 | 中北大学 | Device for chemically-mechanically grinding and thinning crystals and use method of device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20141112 Termination date: 20160526 |