CN203930075U - A kind of plate CT detector - Google Patents
A kind of plate CT detector Download PDFInfo
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- CN203930075U CN203930075U CN201420329596.5U CN201420329596U CN203930075U CN 203930075 U CN203930075 U CN 203930075U CN 201420329596 U CN201420329596 U CN 201420329596U CN 203930075 U CN203930075 U CN 203930075U
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Abstract
The utility model discloses a kind of plate CT detector, comprising: a plurality of CT detector cells that at least formed by substrate circuitry plate and the detector cells base of rear collimating apparatus, scintillator blocks, CMOS photodetector, massive plate; In each CT probe unit, the scintillator blocks of a plurality of splicings arranged side by side is set on the surface of photodetector, and collimating apparatus after being provided with in scintillator blocks, photodetector is arranged on the substrate circuitry plate of a massive plate; The plurality of CT detector cells is arranged along being line segment shape on the camber line tangent line centered by x-ray source.The photodetector of CMOS photodetector of the present utility model or electric charge storage pattern is arranged on the substrate circuitry plate of a massive plate, overcome a large amount of connecting material that prior art CT detector adopts very a plurality of little narrow substrate circuitry plates and little narrow detector cells to consume, preparation man-hour and accurate problem when installation work-hour and inspection man, reduced the probability breaking down.
Description
Technical field
The utility model relates to medical imaging field, refers to especially a kind of plate CT detector.
Background technology
At present, CT equipment is applied to various fields, as safety inspection, Aero-Space, defence and military and medical domain.In medical domain, the X ray bulb of CT equipment utilization radiation fan pencil of forms X ray and the hyperchannel CT detector of placing in the face of X ray bulb scan human body.Then, the Transmission X ray data of CT detector based on this acquisition, then, rebuilds and obtains image.That the human body image that uses this technology to obtain has is clear and intuitive, resolution is high, be convenient to analyze and the advantage such as storage, is conducive to analyze patient's the state of an illness.
Fig. 1 (a)-Fig. 1 (b) is the structural representation of single CT probe unit 10 in prior art.Fig. 1 (a), Fig. 1 (b) and Fig. 1 (c) are respectively in prior art single CT detector cells 10 at the view of different directions.X-direction: centered by x-ray source on camber line tangentially; Z-direction: along human body longitudinal direction; Y-direction: from the camber line at detector place to x-ray source (bulb) direction.Probe unit in Fig. 1 (a), Fig. 1 (b) and Fig. 1 (c) comprises: rear collimating apparatus 1, scintillator blocks 2, CMOS (Complementary Metal-Oxide-Semiconductor, complementary metal oxide semiconductor (CMOS)) photodetector 3, lead-in wire 4, electrical signal data process chip 5, substrate circuitry plate 6 and detector cells base 7.Substrate circuitry plate 6 is set on detector cells base 7, and the surface of substrate circuitry plate 6 edges arranges electrical signal data process chip 5, and CMOS photodetector 3 is set on substrate circuitry plate 6; Meanwhile, lead-in wire 4 one end are fixedly connected on CMOS photodetector 3, and the other end is fixedly connected on substrate circuitry plate 6, and a scintillator blocks 2 is set on CMOS photodetector 3, in scintillator blocks 2, arrange one after collimating apparatus 1, rear collimating apparatus 1 covers scintillator blocks 2.
When the CT of prior art detector cells 10 is applied in CT equipment, place as shown in Figure 2 the CT equipment configuration diagram that Fig. 2 is prior art.Shown in Fig. 2, X ray bulb 8 transmitting X ray are irradiated to CT detector cells 10 through human mould 9.During use, CT detector cells 10 upper surfaces are towards human mould 9, and a lot of little narrow CT detector cells 10 are arranged in arc or accurate arc.2D (two dimension) pel array that CT detector cells 10 has equidimension forms, 2D pel array is known as " row " of CT detector along human body longitudinal direction (herein later also referred to as Z-direction), 2D pel array is called " passage " of CT detector along (herein later also referred to as X-direction) on the camber line tangent line centered by x-ray source.With respect to X ray bulb focus, each pixel access has equal subtended angle.Little narrow CT detector cells 10 receives X ray bulb 8 and sees through the fladellum X ray that human mould 9 radiation are come, and the electrical signal data of finally exporting by CT detector cells 10 reconstructs the human body image that human mould 9 is complete.
Based on image reconstruction algorithm of the prior art, a lot of CT detector cells 10 of these X ray CT equipment needs (for example, 27, or 38, or 57) along (X-direction) on the camber line centered by x-ray source, form arc line shaped, receive the X ray that X ray bulb 8 is injected.And in order to form arc or accurate arc, needing CT detector cells 10 is very narrow in X-direction, for example, only has 16 passages.Therefore, in the prior art, prepare such CT equipment and need very a plurality of CT detector cells 10, prepare so multidetector unit, need expensive man-hour, test that so whether multidetector unit is qualified, also need expensive man-hour, so many probe units high precision being assembled into CT detector, a large amount of connecting materials and a large amount of man-hours need to have been consumed, and then improved the cost of preparing CT equipment, and too much CT detector cells 10 also makes, and device assembles is too loaded down with trivial details, trouble, is more prone to and damages and fault.
Utility model content
In view of this, the purpose of this utility model is to propose a kind of massive plate type CT detector that reduces costs, is beneficial to use, low damage, low fault.
A kind of plate CT detector providing based on above-mentioned purpose the utility model, comprising: a plurality of CT detector cells that are at least comprised of substrate circuitry plate and the detector cells base of rear collimating apparatus, scintillator blocks, COMS photodetector and massive plate; In each CT detector cells, the scintillator blocks of a plurality of splicings arranged side by side is set on the surface of described COMS photodetector, and collimating apparatus after being provided with in described scintillator blocks, each COMS photodetector is arranged on the substrate circuitry plate of a massive plate, and the substrate circuitry plate of described massive plate is arranged on described detector cells base; On the tangent line of the camber line of a plurality of CT detector cells edge centered by x-ray source, be that X-direction is linear array.
In some embodiments, each the CMOS photodetector in described CT detector cells is not less than the twice of a scintillator blocks length along the length of the tangential direction of the camber line centered by x-ray source.
In some embodiments, CMOS photodetector in described CT detector cells is the photodetector with 2D pel array, scintillator blocks in described CT detector cells has and the corresponding 2D pel array of described CMOS photodetector size, and the pixel access number of the tangential direction along the camber line centered by x-ray source in described CT detector cells is not less than 48; The size of each pixel in described CT probe unit is that 0.5mm is to 3.5mm in X-direction; The size of each pixel is that 0.6mm is to 4mm in Z-direction
In some embodiments, the rear collimating apparatus in described CT detector cells is the rear collimating apparatus that an integral body covers all scintillator blocks.Described rear collimating apparatus is to X ray, to have the slice, thin piece (for example, tungsten sheet) of strong absorption to arrange and form along X-direction by a plurality of.These tungsten sheet one end are arranged in scintillator blocks, and the other end focuses on the focus of subtend X ray bulb.
In some embodiments, the rear collimating apparatus in described CT detector cells is a plurality of tilings arranged side by side and the rear collimating apparatus that covers all scintillator blocks.
In some embodiments, the CMOS photodetector in described CT detector cells is the photodetector with 2D pel array, and the scintillator blocks in described CT detector cells has and the corresponding 2D pel array of described CMOS photodetector size.
In some embodiments, described CT detector cells has identical or different size along the pixel in the tangential direction of the camber line centered by x-ray source.In some embodiments, the CMOS photodetector in described CT detector cells is laid in by a monoblock silicon chip or polylith silicon chip on the substrate circuitry plate of described massive plate and makes.The electric signal of each pixel can be guided to circuit board in one or both sides from silicon chip upper surface with metal wire.
In some embodiments, the CMOS photodetector in described CT detector cells is laid in by a monoblock silicon chip or polylith silicon chip on the substrate circuitry plate of described massive plate and makes.The electric signal of each pixel also can be guided to circuit board by conducting resinl or solder ball from the lower surface of silicon chip.In some embodiments, the quantity of the scintillator blocks in described CT detector cells is 12, and every row arranges 6, lines up side by side 2 rows.
In some embodiments, a plurality of CT visit unit along the plate CT detector forming along tangent line X-direction on camber line centered by x-ray source, middle several CT detector cells can be small pixel, and can be large pixels at several CT detector cells of outside, both sides.Certainly, all CT detector cells can have the pixel of formed objects.
In some embodiments, the CMOS photodetector in described CT detector cells is the photodetector of electric charge storage pattern.
In some embodiments, in described CT detector cells, further, in circuit board, below silicon chip, increase temperature sensor, between circuit board and detector cells base, below silicon chip, increase heating element.By the feedback of temperature sensor, regulate like this power of well heater, to reach, the temperature of detector cells is realized and being controlled, reduce photodetector, the temperature drift of Electric signal processing chip.
In some embodiments, in described CT detector cells, described heating element is added in the outside of detector cells base or the inside that edge arrives detector cells base, by the feedback of temperature sensor, regulate like this power of well heater, to reach, the temperature of detector cells is realized and being controlled, reduce photodetector, the temperature drift of Electric signal processing chip.Further, also can on base, add a cooling fan, to coordinate and realize better temperature control with well heater.
In some embodiments, in described CT detector cells, Electric signal processing chip, along Z-direction, is all come a side.At opposite side, the edge of described photodetector, the edge of the circuit board of massive plate, the edge of unit base is substantially to align with the edge of scintillator blocks.
In some embodiments, in described CT detector cells, further, a plurality of described photodetectors, the circuit board of massive plate, the detector cells that unit base is alignd in a side with scintillator blocks (not comprising rear collimating apparatus) is lined up a more multiple row Super Snooper unit in YZ-flat stack.Described Super Snooper unit has in YZ-plane and is a plurality of step-like pedestals, and the detector cells of each described discrete side alignment is fixedly installed on the step of described pedestal with bolt.The detector cells of a discrete side alignment is positioned at another oblique upper, and being projected in of they forms scintillator blocks in Z-direction and join.Collimating apparatus after described Super Snooper unit has one.The tungsten sheet of described rear collimating apparatus is a plurality of step-like in YZ-plane, and the upper surface of the scintillator blocks in the detector cells that aligns of the bottom of an a plurality of steps side discrete with each matches.On the step-like base of described Super Snooper unit, further can add a well heater is controlled the temperature of Super Snooper unit.Or further, add a cooling fan and coordinate well heater to realize better temperature control.
As can be seen from above, because CT detector is comprised of a plurality of CT detector cells, the scintillator blocks of a plurality of splicings arranged side by side is set on the surface of the CMOS photodetector in described each CT detector cells.Each COMS photodetector is arranged on the substrate circuitry plate of a massive plate.By contrast, the plate CT detector cells negligible amounts of use.
CT detector has higher requirements to detection accuracy, and the method for conventionally taking is to make CT probe unit substantially vertical with x-ray, so that X ray is substantially vertically irradiated in the pixel of CT probe unit.Prior art is limit by its thinking for this reason, generally CT probe unit size is done littlely, for example in X-direction, only has 16 pixel accesses, and all corresponding increase is a lot of for the quantity of CMOS photodetector, substrate circuitry plate like this.Install and be connected these little narrow CT probe units and need to consume a lot of materials.The utility model has been broken away from the limitation of prior art, the quantity of the devices such as COMS photodetector, substrate circuitry plate is significantly reduced, saved lot of materials, reduced the cost of preparation CT equipment, reduced failure rate, device assembles is easy simultaneously, has saved a large amount of man-hours, material and cost.
Accompanying drawing explanation
The structural representation of the CT probe unit that Fig. 1 (a)～Fig. 1 (c) is prior art;
Fig. 2 is that the CT detector of prior art uses view;
Fig. 3 is that the structure of CT probe unit in an embodiment of the present utility model is in Y-direction schematic top plan view;
Fig. 4 does not add the vertical view of the plate CT detector cells of rear collimating apparatus in Fig. 3 middle plateform type CT detector cells of the present utility model;
Fig. 5 is the sectional view of the XY-plane of Fig. 3 middle plateform type CT detector cells of the present utility model;
Fig. 6 is the sectional view of the YZ-plane of Fig. 3 middle plateform type CT detector cells of the present utility model;
Fig. 7 is the vertical view of collimating apparatus after the utility model embodiment middle plateform type CT detector 2D;
Fig. 8 is the vertical view of collimating apparatus after the utility model embodiment middle plateform type CT detector 1D;
Fig. 9 is the vertical view of Y-direction that does not add the plate CT detector cells of rear collimating apparatus in an embodiment of the present utility model (pixel in X-direction is 96 passages, and scintillator blocks arranges 3 in X-direction, in Z-direction, 2 rows is set);
Figure 10 is that the utility model embodiment middle plateform type CT detector uses view;
Figure 11 is the subtended angle degree schematic diagram of the relative x-ray source bulb of the pixel focus in the utility model embodiment middle plateform type CT detector cells;
Figure 12 is that the electric signal of each pixel in an embodiment of the present utility model is guided to the sectional view of the YZ-plane of the plate CT detector cells the circuit board of massive plate from the lower surface of photodetector with conducting resinl.
Figure 13 is that the electric signal of each pixel in embodiment Figure 12 of the present utility model is guided to the sectional view of the XY-plane of the plate CT detector cells the circuit board of massive plate from the lower surface of photodetector with conducting resinl.
Figure 14 is the sectional view of YZ-plane that increases a well heater in embodiment Figure 12 of the present utility model and increased the plate CT detector cells of a temperature sensor between circuit board and unit base in circuit board below silicon chip.
Figure 15 is the sectional view of XY-plane that increases a well heater in embodiment Figure 14 of the present utility model and increased the plate CT detector cells of a temperature sensor between circuit board and unit base in circuit board below silicon chip.
Figure 16 increases a well heater and in circuit board, below silicon chip, has increased the sectional view of YZ-plane of the plate CT detector cells of a temperature sensor at unit base outside surface in embodiment Figure 12 of the present utility model.
Figure 17 is in an embodiment of the present utility model, all Electric signal processing chips are all placed in to a side along Z-direction, edge in opposite side scintillator blocks, the edge of photodetector silicon chip, the sectional view of the massive plate CT detector cells YZ-plane of the edge of circuit board and the justified margin of base.
Figure 18 is in embodiment Figure 17 of the present utility model, all Electric signal processing chips are all placed in to a side along Z-direction, edge in opposite side scintillator blocks, the edge of photodetector silicon chip, the massive plate CT detector cells of the edge of circuit board and the justified margin of base does not add the schematic top plan view of the Y-direction of rear collimating apparatus.
Figure 19 is in an embodiment of the present utility model, and a plurality of probe units without rear collimating apparatus in Figure 17 and Figure 18 are queued in Z-direction and Y-direction lamination, forms and has the more sectional view of the YZ-plane of the detector cells of multiple row.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the utility model is further described.
Please refer to Fig. 3～Fig. 6, plate CT detector comprises a plurality of CT detector cells 10 that are at least comprised of substrate circuitry plate 6 and the detector cells base 7 of rear collimating apparatus 1, scintillator blocks 2, CMOS photodetector 3 and massive plate; In each CT detector cells 10, the scintillator blocks 2 of a plurality of splicings arranged side by side is set on the surface of described CMOS photodetector 3, and collimating apparatus 1 after being provided with in described scintillator blocks 2, each CMOS photodetector 3 is arranged on the substrate circuitry plate 6 of a massive plate, and the substrate circuitry plate 6 of described massive plate is arranged on described detector cells base 7; On the tangent line of a plurality of CT detector cells 10 camber lines of edge centered by x-ray source, be that X-direction is the arrangement of line segment shape.
The plurality of scintillator blocks 2 is spliced side by side and is adopted the mode of coupling to be fixed with CMOS photodetector 3.When making CT detector cells 10, it is difficult preparing the large and performance scintillator blocks 2 up to standard of volume, and therefore can select to splice a plurality of scintillator blocks 2 solves difficulty.Due to collimating apparatus 1 after being provided with in described scintillator blocks 2, each CMOS photodetector 3 is arranged on the substrate circuitry plate 6 of a massive plate, not only significantly reduced the quantity of substrate circuitry plate, save material, reduced the cost of preparation CT equipment, and effectively reduce equipment failure rate, and and make device assembles easy, saved man-hour, material and cost.In described CT detector cells 10, along the number of pixels in the tangential direction of camber line centered by x-ray source more than or equal 48 passages, and the pixel in X-direction with same size has different subtended angle degree to x-ray source.
In the present embodiment, optional, described CMOS photodetector is that the pixel in X-direction is not less than 48 on tangentially on camber line centered by x-ray source, for example 64, or 96, or 128.
Photodetector 3 be take CMOS photodetector as example, please refer to Fig. 4 and Fig. 5.Preferably, described CMOS photodetector 3 centered by x-ray source on camber line tangentially (being in X-direction) be not less than the twice of scintillator blocks 2 length.A plurality of scintillator blocks 2 can be set according to different demands, and then design photodetector 3 length of (being X-direction) tangentially on camber line centered by x-ray source.On the length direction of CMOS photodetector 3, be provided with six scintillator blocks 2, the length of the CMOS photodetector 3 of the massive plate matching need be designed to 6 times of scintillator blocks 2.
Please refer to Fig. 4, described CMOS photodetector 3 is for having the photodetector of 2D pel array.(described pixel is in the tangential direction of the camber line along centered by x-ray source, and the pixel of each equivalent size is different to the subtended angle of x-ray source bulb.) described CMOS photodetector 3 and scintillator blocks 2 be the 2D pel array of corresponding size, and be coupled.Described scintillator blocks 2 is and the corresponding 2D pel array of described photodetector size.
Please refer to Fig. 4, in the present embodiment, optional, the CMOS photodetector 3 in described CT detector cells 10 is to select silicon chip to make, and specifically by a monoblock massive plate silicon chip or polylith silicon chip, is laid on the substrate circuitry plate of described massive plate and is made.These photodetectors 3 with massive plate architectural feature have 2D pel array, on silicon chip, have a plurality of scintillator blocks that tiling 2, these same scintillator blocks 2 are also divided into and the 2D pel array of 2D pixel corresponding size with the photodetector 3 of massive plate architectural feature.Further, optional, CMOS photodetector can be the photodetector of electric charge storage pattern.So-called electric charge storage pattern is exactly that the electric charge that has a capacitor visible ray can be produced at photodetector in each pixel is temporarily stored, and the gating switch being used in needs in each pixel discharges the electric charge of storage.
Please refer to Fig. 7～Fig. 8, described Fig. 7 is that collimating apparatus 1 is the vertical view of 2D collimating apparatus, and described Fig. 8 is that collimating apparatus 1 is the vertical view of 1D collimating apparatus.Described rear collimating apparatus is along X-direction, to arrange collimating apparatus after the 1D forming by a plurality of slice, thin pieces (for example, tungsten sheet) that X ray had to a strong absorption.These tungsten sheet one end are arranged in scintillator blocks, and the other end focuses on the focus of subtend X ray bulb.If also having tungsten sheet arranges and has just formed collimating apparatus after 2D along Z-direction simultaneously.In the present embodiment, optional, described CT detector cells 10 comprise an integral body cover collimating apparatus after the 1D of all scintillator blocks 2 or 2D or a plurality of tiling arranged side by side and cover 1D that all scintillator blocks 2 are little or 2D after collimating apparatus.
Principle of work is as follows: X ray, by after human body, produces radioparent and scattered ray.Because massive plate type CT detector utilizes radioparent reconstructed image, scattered ray similarly is what be harmful to restructuring graph, need to eliminate.So collimating apparatus 1 can reduce or eliminate scattered x-ray after installing, stop scattered x-ray to arrive in the pixel of CT detector, reduce scattered ray as far as possible and enter the sharpness that affects imaging after massive plate type CT detector.
Please refer to Fig. 3, in the present embodiment, optional, can design a rear collimating apparatus 1 that integral body is large, cover all scintillator blocks 2; Also can design a plurality of little rear collimating apparatuss 1 and be stitched together, each little rear collimating apparatus 1 covers in one or more scintillator blocks 2, and a plurality of so little rear collimating apparatuss 1 are stitched together also can cover all scintillator blocks 2.
Please refer to Fig. 4, the CMOS photodetector 3 of described massive plate on camber line centered by x-ray source along the pixel on tangent line directions X more than or equal 48.Because a plurality of scintillator blocks 2 are stitched together side by side, the pixel of each scintillator blocks 2 is 16, and can be coupled with the CMOS photodetector 3 of a massive plate, make pixel that the CMOS photodetector 3 of massive plate tangentially goes up on camber line centered by x-ray source more than or equal 48, if pixel is 64 or 96 or 128 passages, make like this pixel count integrated level higher, be more conducive to reduce costs.
In the present embodiment, optional, on described substrate circuitry plate 6, be provided with electrical data signal process chip 5, for changing into digital signal by receiving the analog electrical signal coming.By the X ray of rear collimating apparatus 1 filtering scattered ray, see through scintillator blocks 2 and be transformed into visible ray, visible ray is transformed into analog electrical signal by the photodetector 3 of massive plate, analog electrical signal forms digital signal by the electrical signal data process chip 5 on the substrate circuitry plate 6 of massive plate, and digital signal finally forms complete human body image through rebuilding.
Please refer to Fig. 4, the preferred number of described scintillator blocks 2 is 12, and every row arranges 6, is arranged into 2 rows, a large amount of like this saving man-hour, material and cost, and utilization factor is high.Also can as required, design more or less scintillator blocks 2.
Please refer to Fig. 9, in an embodiment of the present utility model, described CT detector cells 10 has 96 pixels in X-direction, the quantity of described scintillator blocks 2 is 6, every row arranges 3, be arranged into 2 rows, the size of scintillator blocks 2 is large like this, in the time of can saving scintillator blocks 2 worker, material and cost.In the present embodiment, preferably, the material of described rear collimating apparatus 1 is tungsten sheet or tungalloy sheet or molybdenum sheet.The receptivity to X ray of high desnity metal tungsten is strong, and effectively filtering scattered ray, reduces its impact on imaging definition.
Please refer to Figure 10, when the utility model is applied in CT equipment, the CT detector cells 10 of less several massive plate types presents line segment shape along camber line tangential direction and arranges.When X ray bulb 8 is mapped on plate CT detector through human mould 9, make plate CT detector can receive in the pixel of X-direction the X ray that different angles radiation is come, the pixel of the CT detector forming with the arc of prior art or the little narrow detector cells of accurate arc shooting is compared, the subtended angle degree of the X ray that different pixels is come to radiation is no longer identical, please refer to Figure 11, cause image section that the utility model in use obtains and the image reconstruction algorithm of prior art to have deviation, based on improved image reconstruction algorithm (can be referring to: patent US2011/0135054A1 has specifically provided a kind of correction reconstruction algorithm of CT image of the structure detector with massive plate), can invent resulting offset images by revised version.The utlity model has the CMOS photodetector 3 of massive plate, can a plurality of scintillator blocks 2 be set on the CMOS of massive plate photodetector 3, utilization factor is higher.This CT equipment, compare original, need less several plate CT detector cells 10 to realize, when preparing such CT equipment, can save substrate circuitry plate, and then while saving preparation and inspection man, a large amount of minimizings connecting material, and reduced failure rate, less detector cells, accurate installation and maintenance are easier saving time also.
The size of each pixel of CT probe unit 10 X-direction be 0.5mm to 3.5mm, number of pixels is 64,96 or 128 or more.The size of pixel Z-direction be 0.6mm to 4mm, scintillator blocks 2 can be 8,16,32,64 passages at the number of pixels of X-direction, so can be with the massive plate photodetector of the more pixels of polylith fritter splicing cooperation.Z-direction can be also that polylith is lined up.Can be different at Z-direction pixel size, row as several in central authorities are less, are of a size of 1.23mm, and outside, both sides is several to be classified as greatly, is of a size of 2.46mm.Plate CT detector can form with a plurality of CT detector cells 10 of different numbers as required, such as 7 CT visit unit 10 along the plate CT detector (please refer to Figure 10) forming along tangent line X-direction on camber line centered by x-ray source, three middle CT detector cells 10 can be small pixel, at X-direction Pixel Dimensions, be 1.0mm, four CT detector cells 10 in outside, both sides can be large pixels, at X-direction Pixel Dimensions, be 2.0mm, reduced like this consumption of Electric signal processing chip 5, can further reduce costs, certain all detector cells 10 can be also same pixel sizes.
Further, adding the photodetector 3 of the whole massive plate with two-dimensional pixel of the above also can be by along in X-direction be spliced along the little piece of Z-direction.
Please refer to Figure 12 and Figure 13, in an embodiment of the present utility model, further, the electric signal of each pixel of described CMOS photodetector 3 can direct into circuit board 6 with conduction glueballs 11 from lower surface.Please refer to Fig. 4 and Fig. 6, certainly, also can along Z-direction from both sides, with metal wire 4, direct into circuit board 6 from CMOS photodetector 3 silicon chip upper surfaces.
Please refer to Figure 14 and Figure 15, further, in an embodiment of the present utility model, can between circuit board 6 and unit base 7, increase a well heater 12, and in circuit board 6, below silicon chip, increase a temperature sensor 13.By the feedback of temperature sensor 13, regulate like this power of well heater 12, to reach, the temperature of detector cells 10 is realized to control, thereby reduce the temperature drift of photodetector 3 and Electric signal processing chip 5.Further, also can on base 7, add a cooling fan (not shown in the diagram), to coordinate and realize better temperature control with well heater 12.
Please refer to Figure 16, in an embodiment of the present utility model, the well heater 12 increasing is arranged on the outside of detector base 7, regulates like this power of well heater 12 by the feedback of temperature sensor 13, to reach, the temperature of detector cells 10 is realized and being controlled.
Please refer to Figure 17 and Figure 18, in an embodiment of the present utility model, all electrical signal data process chip 5 are all placed in to a side along Z-direction, edge in opposite side scintillator blocks 2, the edge of photodetector silicon chip 3, the justified margin of the edge of circuit board 6 and base 7, forms massive plate CT detector cells 10.
Please refer to Figure 19, in an embodiment of the present utility model, in order to construct the CT detector of different lines, a plurality of probe units 14 without rear collimating apparatus of Figure 17 are queued at YZ-direction lamination, form and there is the more Super Snooper unit 10 of multiple row.The Super Snooper unit 10 here has in YZ-plane and is a plurality of step-like pedestals 17, on the step described in probe unit 14 use the bolts 18 of each described discrete side alignment are fixedly installed to.The detector cells 14 of a discrete side alignment is positioned at another oblique upper, and being projected in of they forms scintillator blocks 2 in Z-direction and join.Collimating apparatus 1 after described Super Snooper unit 10 has one.The tungsten sheet 16 of collimating apparatus is a plurality of step-like in YZ-plane after this, and the upper surface of the scintillator 2 in the probe unit 14 that aligns of the bottom of an a plurality of steps side discrete with each matches.After the tungsten sheet 16 of rear collimating apparatus is installed to two on collimating apparatus end block 15, collimating apparatus end block is fixedly installed on step-like pedestal 17 with bolt after described two.Further, on step-like pedestal 17 outside surfaces of described Super Snooper unit 10 or the inside of step-like pedestal 17 can increase a well heater 12, be used for the temperature of Super Snooper unit 10 to be controlled.Or further, then add a cooling fan (not shown) and coordinate well heater to realize better temperature to control.
Those of ordinary skill in the field are to be understood that: the foregoing is only specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle; any modification of making, be equal to replacement, improvement etc., within all should being included in protection domain of the present utility model.
Claims (10)
1. a plate CT detector, is characterized in that, comprising: a plurality of CT detector cells that are at least comprised of substrate circuitry plate and the detector cells base of rear collimating apparatus, scintillator blocks, COMS photodetector and massive plate; In each CT detector cells, the scintillator blocks of a plurality of splicings arranged side by side is set on the surface of described CMOS photodetector, and collimating apparatus after being provided with in described scintillator blocks, each COMS photodetector is arranged on the substrate circuitry plate of a massive plate, and the substrate circuitry plate of described massive plate is arranged on described detector cells base; A plurality of CT detector cells are arranged along being line segment shape on the tangent line of the camber line centered by x-ray source.
2. a kind of plate CT detector according to claim 1, it is characterized in that, CMOS photodetector in described CT detector cells is the photodetector with 2D pel array, scintillator blocks in described CT detector cells has and the corresponding 2D pel array of described CMOS photodetector size, and the pixel access number of the tangential direction along the camber line centered by x-ray source in described CT detector cells is not less than 48.
3. a kind of plate CT detector according to claim 1, is characterized in that, each the CMOS photodetector in described CT detector cells is not less than the twice of a scintillator blocks length along the length of the tangential direction of the camber line centered by x-ray source.
4. a kind of plate CT detector according to claim 1, it is characterized in that, rear collimating apparatus in described CT detector cells is the rear collimating apparatus that an integral body covers all scintillator blocks, or described rear collimating apparatus is a plurality of tilings arranged side by side and the rear collimating apparatus that covers all scintillator blocks.
5. a kind of plate CT detector according to claim 1, is characterized in that, described CT detector cells has identical size along the pixel in the tangential direction of the camber line centered by x-ray source.
6. a kind of plate CT detector according to claim 1, is characterized in that, described CT detector cells is of different sizes along the pixel in the tangential direction of the camber line centered by x-ray source.
7. a kind of plate CT detector according to claim 1, is characterized in that, the CMOS photodetector in described CT detector cells is laid in by a monoblock silicon chip or polylith silicon chip on the substrate circuitry plate of described massive plate and makes.
8. a kind of plate CT detector according to claim 1, is characterized in that, the CMOS photodetector in described CT detector cells is the photodetector of electric charge storage pattern.
9. a kind of plate CT detector according to claim 1, mounting heater on base in described CT detector cells, mounting temperature sensor in detector cells, the temperature of utilizing temperature sensor feedback regulation well heater to realize detector cells is controlled.
10. a kind of plate CT detector according to claim 1, is characterized in that,
In described CT detector cells along a plurality of probe unit stacked arrangement structures are set in Z-direction, described a plurality of probe unit stacked arrangement structures refer to that all electrical signal data process chip are arranged on a side along Z-direction, and the edge of opposite side scintillator blocks, the edge of photodetector silicon chip, the probe unit of the edge of circuit board and the justified margin of base is lamination along Y-, Z-direction and places; And being projected in of described probe unit forms scintillator blocks in Z-direction and joins;
In described CT detector cells, have in YZ-plane and be a plurality of step-like pedestals, described a plurality of discrete all electrical signal data process chip are arranged on a side along Z-direction, and the edge of opposite side scintillator blocks, the edge of photodetector silicon chip, the probe unit of the edge of circuit board and the justified margin of base is fixed on the step of pedestal; YZ-plane in described CT detector cells is mounting heater on a plurality of step-like pedestals, mounting temperature sensor in detector cells, and the temperature of utilizing temperature sensor feedback regulation well heater to realize detector cells is controlled;
The tungsten sheet with collimating apparatus after in described CT detector cells is a plurality of step-like in YZ-plane, and the bottom of a plurality of steps of described tungsten sheet and a plurality of discrete all electrical signal data process chip are arranged on a side along Z-direction, and the edge of opposite side scintillator blocks, the edge of photodetector silicon chip, the scintillator of the probe unit of the edge of circuit board and the justified margin of base matches.
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| CN201420329596.5U CN203930075U (en) | 2014-06-19 | 2014-06-19 | A kind of plate CT detector |
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| CN201420329596.5U CN203930075U (en) | 2014-06-19 | 2014-06-19 | A kind of plate CT detector |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109199425A (en) * | 2018-09-29 | 2019-01-15 | 天津金曦医疗设备有限公司 | A kind of mobile plate CT imaging system for the detection of brain soft tissue |
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2014
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109199425A (en) * | 2018-09-29 | 2019-01-15 | 天津金曦医疗设备有限公司 | A kind of mobile plate CT imaging system for the detection of brain soft tissue |
| WO2020063379A1 (en) * | 2018-09-29 | 2020-04-02 | 杨舰 | Mobile flat-panel ct imaging system for brain parenchyma detection |
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Inventor after: Sun Yunfeng Inventor after: Sun Yunfeng Cui Deqi Inventor before: Sun Wenwu |
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Effective date of registration: 20150924 Address after: 100176 No. 2 North Yongchang Road, Beijing economic and Technological Development Zone, Beijing Patentee after: Air defence General Electric Medical System Co Ltd Address before: 100871 Beijing city Haidian District Peking University Wei Xiu park apartment 29-310 Patentee before: Sun Wenwu |
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