CN203882969U

CN203882969U - A silicon chip lifting-in-place detection mechanism

Info

Publication number: CN203882969U
Application number: CN201420292067.2U
Authority: CN
Inventors: 刘海珊; 孙红喆; 王维熙
Original assignee: Tianjin Yuan Tiansheng Development In Science And Technology Co Ltd
Current assignee: Tianjin Yuan Tiansheng Development In Science And Technology Co Ltd
Priority date: 2014-06-03
Filing date: 2014-06-03
Publication date: 2014-10-15
Anticipated expiration: 2024-06-03

Abstract

The utility model discloses a silicon chip lifting-in-place detection mechanism comprising a metal proximity sensor. An inductance loop mandrel is installed right below the metal proximity sensor. An inductance loop in a to-be-tested state naturally droops and is hung on the inductance loop mandrel. The inductance loop comprises a plastic basal body. The middle portion of the basal body is provided with an annular groove. A stainless steel annular inductor is fixed in the annular groove. A silicon chip lifted in a working process can contact and lift the inductance loop to make the inductance loop to enter a monitoring scope of the metal proximity sensor. The beneficial effects of the mechanism are that the silicon chip contact the inductance loop in a free state, and no outer force exists except gravity of the loop; the acting force applied to the surface of the silicon chip is minimum; the contact is simplest and softest; hidden risks of damaging the silicon chip are lowest; simultaneously, no error exists in the inductance loop contact, so that accurate detection can be carried out, and damage risks is the lowest.

Description

Silicon chip rises to position detecting mechanism

Technical field

The utility model relates to the mechanism whether putting in place for detection of silicon chip lifting process, and the utility model relates in particular to silicon chip and rises to position detecting mechanism.

Background technology

Solar silicon wafers being carried out under water in auto plate separation process, stacked silicon chip need to be positioned in carrying fixture and be promoted to vertically upward burst height, whether this just requires to detect silicon chip upper strata by transducer and promotes and put in place.Because lifting process carries out under water, silicon chip is non-metallic material and thin and frangible, and it is unstable that tradition utilizes the mode of transducer direct-detection to detect effect.Traditional detection mode is generally: directly contact and optoelectronic induction mode, but these two kinds of equal defectiveness of technology, direct contact type, need a rigid mechanism to touch silicon chip, silicon chip motion drives this mechanism to move, whether detect silicon chip by detection displacement and put in place,, owing to there being the resistance of motion, there is the risk of damage silicon chip in this rigid mechanism in movement.The form of optoelectronic induction, because silicon chip surface has many dirtyly, can directly affect sensitization intensity, and along with silicon chip surface state difference, also difference of detection effect, causes erroneous judgement.

Summary of the invention

The purpose of this utility model is to overcome the defect of prior art, provides a kind of silicon chip that detects effect stability to rise to position detecting mechanism.

Silicon chip of the present utility model rises to position detecting mechanism, it comprises metal approach transducer, under described metal approach transducer, inductance loop mandrel is installed, under state to be detected, inductance loop naturally droops and is suspended on inductance loop mandrel, described inductance loop comprises plastic substrate, in the middle of described matrix outer wall, be provided with annular groove, in described annular groove, be fixed with stainless steel annular inductor, the silicon chip being raised in the course of the work can contact and jacking inductance loop enters in the monitoring range of metal approach transducer inductance loop.

The beneficial effect of this mechanism is: what silicon chip contacted is the inductance loop of a free state, except the gravity of decyclization, without any external force, to the active force minimum of silicon chip surface, contact the simplest, the softst, silicon chip is caused to damaged hidden danger minimum, inductance loop contact does not simultaneously have error yet, has played and can accurately detect, and can cause again minimum injury risk.

Brief description of the drawings

Fig. 1 is the overall structure schematic diagram that the silicon chip of the present utility model under state to be detected rises to position detecting mechanism;

Fig. 2 is the overall structure schematic diagram that the silicon chip of the present utility model under detection completion status rises to position detecting mechanism;

Fig. 3-1st, the inductance loop structural representation in the mechanism shown in Fig. 1;

Fig. 3-2nd, the A-A of the inductance loop shown in Fig. 3-1 is to schematic diagram.

Embodiment

Below in conjunction with accompanying drawing, the utility model is described in further detail.

The utility model is that the silicon chip that utilizes the indirect detection silicon chip of metal approach transducer and inductance loop composition to promote the signal that puts in place rises to position detecting mechanism.

The overall structure schematic diagram that silicon chip rises to position detecting mechanism as shown in Figure 1, it comprises metal approach transducer 4, under described metal approach transducer, inductance loop mandrel 3 is installed, under state to be detected, inductance loop 2 naturally droops and is suspended on inductance loop mandrel, described inductance loop 2 comprises plastic substrate 5, in the middle of described matrix 5 outer walls, be provided with annular groove, in described annular groove, be fixed with stainless steel annular inductor, silicon chip 1 to be detected is arranged on inductance loop below, the silicon chip being raised in the course of the work can contact and jacking inductance loop makes inductance loop in the monitoring range C of metal approach transducer.Under state to be detected, inductance loop naturally droops and is suspended on inductance loop mandrel under Action of Gravity Field, the silicon chip contact the jacking inductance loop that in the course of work, are raised, sensor output signal in the time that inductance loop rises within the detection range of metal approach transducer, distinguishes that silicon chip promotes to put in place.

Preferably prevent inductance loop extrusion metal proximity transducer, in the time of installation and size design, ensure that inductance loop climb (movable scope) A is less than (buffering range B and detection range C sum).

The thickness of preferred toroidal inductive body is less than the annular groove degree of depth so that the matrix 5 of plastic material directly contacts with silicon chip 1 to be detected.

Inductance loop is suspended on induction mandrel and is positioned at outside the detection range C of metal approach transducer under Action of Gravity Field as shown in Figure 1, now transducer no signal output.

Be to show to detect completion status schematic diagram as shown in Figure 2, this figure shows each component locations under detection completion status.As shown in the figure inductance loop below be raised and under the thrusting action of silicon chip, rise and enter the detection range C of metal approach transducer within, now sensor output signal, distinguishes that silicon chip promotes to put in place.

Shown in Fig. 3-1 and 3-2, be inductance loop structural representation, inductance loop is made up of the matrix 5 of plastic material and the inductor 6 of stainless steel that do not injure silicon chip as shown in the figure, and in testing process, inductor 6 can be by 4 perception of metal approach transducer.In testing process, inductor can and not contact with silicon chip by 4 perception of metal approach transducer, avoids stainless steel damage silicon chip.Inductance loop overall structure is annular, can around inductance loop mandrel rotate, therefore not can with motion silicon chip friction, its light weight, can not weigh silicon chip wounded.

The course of action of this mechanism is as follows:

As shown in Figure 1: under state to be detected, inductance loop is suspended on induction mandrel and is positioned at outside the detection range C of metal approach transducer under Action of Gravity Field, now transducer no signal output.For preventing metal approach transducer erroneous judgement signal setting buffering range B, for preventing that inductance loop pressing sensing device is installing and ensure that movable scope A is less than buffering range B and survey scope C sum when size design.

In motion process, silicon chip is moving upward, and when continuing to move upward after contact induction ring and jacking inductance loop, within inductance loop is entered the detection range C of metal approach transducer by jacking, now sensor output signal, distinguishes that silicon chip lifting puts in place.Testing process completes.

Claims

1. silicon chip rises to position detecting mechanism, it is characterized in that: it comprises metal approach transducer, under described metal approach transducer, inductance loop mandrel is installed, under state to be detected, inductance loop naturally droops and is suspended on inductance loop mandrel, described inductance loop comprises plastic substrate, in the middle of described matrix outer wall, be provided with annular groove, in described annular groove, be fixed with stainless steel annular inductor, the silicon chip being raised in the course of the work can contact and jacking inductance loop enters in the monitoring range of metal approach transducer inductance loop.

2. silicon chip according to claim 1 rises to position detecting mechanism, it is characterized in that: the thickness of toroidal inductive body is less than the annular groove degree of depth.