CN203872421U - DC 12V-48V wide-voltage large-power electrodeless lamp ballast - Google Patents
DC 12V-48V wide-voltage large-power electrodeless lamp ballast Download PDFInfo
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- CN203872421U CN203872421U CN201420247264.2U CN201420247264U CN203872421U CN 203872421 U CN203872421 U CN 203872421U CN 201420247264 U CN201420247264 U CN 201420247264U CN 203872421 U CN203872421 U CN 203872421U
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Abstract
The utility model discloses a DC 12V-48V wide-voltage large-power electrodeless lamp ballast. The DC 12V-48V wide-voltage large-power electrodeless lamp ballast comprises a power supply circuit, a power driving circuit, a pulse driving circuit, a voltage detection circuit, a primary resonance network, a secondary resonance network, a frequency detection circuit and a control circuit. The control circuit comprises a control chip and a peripheral auxiliary circuit. The power supply circuit has one end which is connected with a 12V-48V DC source and the other end which is connected with the primary resonance network and is also connected with the control chip through the power driving circuit. The pulse driving circuit has one end connected with the control chip and the other end connected with a load via the primary resonance network and the secondary resonance network. The voltage detection circuit has one end connected with the power supply circuit and the other end connected with the control chip. The frequency detection circuit has one end connected with the control chip and the other end connected with the secondary resonance network. The advantages are as follows: the circuits employ single-stage structures, the electrodeless lamp ballast is generally applied to a supply voltage range of 12V-48V, and the output power covers a range of 10-80W.
Description
Technical field
The utility model relates to ballast, relates in particular to the wide voltage high-power electrodeless of a kind of direct current 12V-48V lamp ballast.
Background technology
The advantages such as Non-polarized lamp is energy-efficient with it, long-life durable are widely used the illuminator at low voltage power supplies such as wind energy, solar energy, and because power supply unit kind is many, voltage range is wide, electric pressure be direct current 12V to 48V not etc.The light sources of electrodeless lamps of low-voltage power supply illuminator, comprises electronic ballast for electrodeless lamp and electrodeless lamp tube two parts at present.Low-voltage non-polar lamp ballast all adopts the direct current supply of given voltage grade, can not under wider voltage (12V-48V) range of condition, work, and traditional low-voltage non-polar lamp ballast, all adopt the circuit mode (be called for short two-stage type) of two cellular constructions.So-called two-stage type structure, the first order is: low-voltage direct booster circuit.This element circuit is transformed into high-voltage dc voltage by low-voltage dc voltage, to second level circuit supply.The second level is: high voltage half-bridge formula inverter output circuit.The DC high voltage that the first order produces, the high-frequency ac voltage de-energisation electrodeless lamp tube producing by this element circuit electric discharge, luminous.Traditional two-stage type low-voltage direct electronic ballast for electrodeless lamp, exist voltage transitions twice, its power supply conversion efficiency is low, circuit structure is complicated, product reliability is poor, due to must be by the direct voltage grade design of appointment, produce electronic ballast for electrodeless lamp, the product category that certainly will cause thus different electric pressures too much, the more high shortcomings of manufacturing cost.
That is to say, traditional low-voltage non-polar lamp ballast must be powered by given voltage grade, can not under wider voltage (12V-48V) range of condition, work, it is the circuit structure of Two Stages mode that ballast is taked, be that the first order is: low-voltage direct booster circuit, by low-voltage dc voltage by high-frequency inversion, boost, rectification, be transformed into 400V direct voltage.The second level is: high voltage half-bridge formula inverter output circuit, the 400V direct voltage that the first order is produced passes through half bridge inverter circuit, then produces high-frequency ac voltage de-energisation electrodeless lamp tube Discharge illuminating.There is following shortcoming in Two-stage converter: 1. the operating efficiency of first order low-voltage direct booster circuit is lower, is only generally 80%, and 2. product integrated circuit is complicated, and reliability reduces.3. product category is too much, and electric pressure is set loaded down with trivial details.4. cost of manufacture is higher, and cost performance is lower, and the market competitiveness declines.
Utility model content
In view of this, the utility model provides the wide voltage high-power electrodeless of a kind of direct current 12V-48V lamp ballast.
The utility model is to realize like this, the wide voltage high-power electrodeless of a kind of direct current 12V-48V lamp ballast, it comprises power supply circuits, power driving circuit, pulse driving circuit, voltage detecting circuit, resonant network, secondary resonant network, frequency detection circuit, control circuit, and described control circuit comprises control chip and peripheral auxiliary circuits thereof, wherein, one end of described power supply circuits connects outside 12V-48V DC power supply, the other end of described power supply circuits is connected to a described resonant network on the one hand, via described power driving circuit, be connected to described control chip on the other hand, one end of described pulse driving circuit is connected to described control chip, the other end of described pulse driving circuit connects a described resonant network, a described resonant network is connected to load via described secondary resonant network, described voltage detecting circuit one end connects described power supply circuits, the described voltage detecting circuit other end connects described control chip, one end of described frequency detection circuit connects described control chip, the other end of described frequency detection circuit connects described secondary resonant network.
As the further improvement of such scheme, described power supply circuits comprise filtering common mode inductance L1, capacitor C 1, capacitor C 2, resistance R 3; Described power driving circuit comprises triode Q1, resistance R 4, voltage-stabiliser tube VD3, electrochemical capacitor C4, resistance R 10, capacitor C 9; Described pulse driving circuit comprises resistance R 13, resistance R 14, field effect transistor V1, field effect transistor V2; Described voltage detecting circuit comprises resistance R 1, resistance R 2, resistance R 5, voltage-stabiliser tube VD1, capacitor C 6; A described resonant network comprises inductance L 2, transformer T1, capacitor C 0; Described secondary resonant network comprises transformer T2, capacitor C 14, capacitor C 15 capacitor C 16 load RL; Described frequency detection circuit comprises capacitor C 7, resistance R 6, voltage-stabiliser tube VD2, capacitor C 12, resistance R 16; Wherein, the primary side of transformer T1 comprises inductance L 3, the inductance L 4 of serial connection, and the primary side of transformer T1 comprises all the inductance L 5 with inductance L 3, inductance L 4 couplings; The input of filtering common mode inductance L1 connects respectively the two ends of outside 12V-48V DC power supply, the two ends of capacitor C 1 connect respectively the input of filtering common mode inductance L1, the two ends of capacitor C 2 connect respectively the output of filtering common mode inductance L1, filtering common mode inductance L1 output, other end ground connection; The other end of the output of filtering common mode inductance L1 is connected to the collector electrode of triode Q1 via resistance R 3, the collector electrode of triode Q1 is also connected to the base stage of triode Q1 via resistance R 4, the base stage of triode Q1 is via negative electrode, the plus earth of voltage-stabiliser tube VD3, the emitter of triode Q1 is connected to the feeder ear of described control chip via resistance R 10, the feeder ear of described control chip is also via capacitor C 9 ground connection, and the emitter of triode Q1 is also via electrochemical capacitor C4 ground connection; The other end of the output of filtering common mode inductance L1 is also connected between inductance L 3 and inductance L 4 via inductance L 2; The other end of the output of filtering common mode inductance L1 is also connected to the negative electrode of voltage-stabiliser tube VD1, the plus earth of voltage-stabiliser tube VD1 via resistance R 1; The negative electrode of voltage-stabiliser tube VD1 is also connected to the input of described control chip via resistance R 2, one end of resistance R 5 connects the input of described control chip, the other end ground connection of resistance R 5, and capacitor C 6 is parallel to resistance R 5; One end of resistance R 13 connects the first output of described control chip, the other end of resistance R 13 connects the grid of field effect transistor V1, the source ground of field effect transistor V1, the drain electrode of field effect transistor V1 connects one end of inductance L 3, the other end of inductance L 3 connects one end of inductance L 4, the other end of inductance L 4 connects the drain electrode of field effect transistor V2, the source ground of field effect transistor V2, the grid of field effect transistor V2 is connected to the second output of described control chip via resistance R 14, the two ends of capacitor C 0 connect respectively one end of inductance L 3 and the other end of inductance L 4; One end of the high-pressure side inductance L 6 of transformer T2 connects the drain electrode of field effect transistor V1 via the primary side inductance L 5 of transformer T1, the other end of inductance L 6 connects the drain electrode of field effect transistor V2 via capacitor C 14, capacitor C 15 shunt capacitance C14, load RL is parallel to capacitor C 15; One end ground connection of the low-pressure side inductance L 7 of transformer T2, the other end of inductance L 7 is connected to the test side of described control chip via resistance R 16, capacitor C 12, the negative electrode of voltage-stabiliser tube VD2 connects the test side of described control chip, the plus earth of voltage-stabiliser tube VD2, resistance R 6 shunt regulator tube VD2.
Preferably, described control chip is SA82 family chip, and the peripheral auxiliary circuits of described control chip comprises capacitor C 5, capacitor C 7, capacitor C 8, resistance R 7, resistance R 8, resistance R 11, resistance R 12, capacitor C 10, capacitor C 11, diode D1, resistance R 18, resistance R 17, electrochemical capacitor C13, resistance R 15, one end of capacitor C 5, one end of capacitor C 7 is ground connection respectively, the other end of capacitor C 5, the other end of capacitor C 7 connects respectively two port CT2 of described control chip, CT1, connectivity port, one end CT1 of capacitor C 8, the other end of capacitor C 8 connects the port RT0 of described control chip via resistance R 7, one end of capacitor C 8 also connects the port RT1 of described control chip via resistance R 8, the other end of inductance L 7 connects the anode of diode D1 via resistance R 8, the negative electrode of diode D1 is connected to the port PRT of described control chip via resistance R 12, one end of resistance R 17 connects the anode of diode D1, the other end ground connection of resistance R 17, one end of electrochemical capacitor C13 connects the negative electrode of diode D1, the other end ground connection of electrochemical capacitor C13, capacitor C 11, resistance R 15 is parallel to respectively electrochemical capacitor C13, one end of resistance R 11 connects the port PRTO of described control chip, the other end connectivity port PRT of resistance R 11, connectivity port, one end PRT of capacitor C 10, the other end ground connection of capacitor C 10.
Preferably, triode Q1 is NPN type triode.
Preferably, field effect transistor V1, field effect transistor V2 are N channel field-effect pipe.
The utility model passes through: 1., with the pulse driver unit circuit of voltage detecting, corresponding different supply power voltage is adjusted driving pulse width automatically, to meet the self adaptation to input voltage; 2. adopt the higher push-pull inverter of low pressure conversion efficiency, directly the inversion boosting of carrying out to low-voltage dc voltage; 3. utilize the mode of twice resonance and the characteristic of electrodeless lamp tube of the output transformer coilloading coil of push-pull inverter to mate, produce high-frequency and high-voltage sinusoidal wave.Thereby make to encourage electrodeless lamp tube Discharge illuminating to meet following condition: 1. circuit is taked single step arrangement; 2. supply power voltage 12V-48V is general; 3. power output covers 10-80W scope, and wide voltage high-power electrodeless lamp ballast substitutes traditional low-voltage non-polar lamp ballast.
Accompanying drawing explanation
The circuit diagram of the wide voltage high-power electrodeless of the direct current 12V-48V lamp ballast that Fig. 1 provides for the utility model better embodiment.
Embodiment
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the utility model, and be not used in restriction the utility model.
Refer to Fig. 1, the wide voltage high-power electrodeless of the direct current 12V-48V lamp ballast that the utility model better embodiment provides comprises power supply circuits, power driving circuit, pulse driving circuit, voltage detecting circuit, resonant network, secondary resonant network, frequency detection circuit, control circuit, and described control circuit comprises control chip U1 and peripheral auxiliary circuits thereof.
Described power supply circuits comprise filtering common mode inductance L1, capacitor C 1, capacitor C 2, resistance R 3, inductance L 2; Described power driving circuit comprises triode Q1, resistance R 4, voltage-stabiliser tube VD3, electrochemical capacitor C4, resistance R 10, capacitor C 9; Described pulse driving circuit comprises resistance R 13, resistance R 14, field effect transistor V1, field effect transistor V2; Described voltage detecting circuit comprises resistance R 1, resistance R 2, resistance R 5, voltage-stabiliser tube VD1, capacitor C 6; A described resonant network comprises inductance L 2, transformer T1, capacitor C 0; Described secondary resonant network comprises transformer T2, capacitor C 14, capacitor C 15 capacitor C 16, load RL; Described frequency detection circuit comprises capacitor C 7, resistance R 6, voltage-stabiliser tube VD2, capacitor C 12, resistance R 16.Wherein, the primary side of transformer T1 comprises inductance L 3, the inductance L 4 of serial connection, and the primary side of transformer T1 comprises all the inductance L 5 with inductance L 3, inductance L 4 couplings.
In the present embodiment, triode Q1 is NPN type triode, and field effect transistor V1, field effect transistor V2 are N channel field-effect pipe, and described control chip is SA82 family chip.
One end of described power supply circuits connects outside 12V-48V DC power supply, the other end of described power supply circuits is connected to a described resonant network on the one hand, via described power driving circuit, be connected to described control chip U1 on the other hand, one end of described pulse driving circuit is connected to described control chip U1, the other end of described pulse driving circuit connects a described resonant network, a described resonant network is connected to load via described secondary resonant network, described voltage detecting circuit one end connects described power supply circuits, the described voltage detecting circuit other end connects described control chip U1, one end of described frequency detection circuit connects described control chip U1, the other end of described frequency detection circuit connects described secondary resonant network.
Concrete circuit connecting mode is as described below.The input of filtering common mode inductance L1 connects respectively the two ends of outside 12V-48V DC power supply, the two ends of capacitor C 1 connect respectively the input of filtering common mode inductance L1, the two ends of capacitor C 2 connect respectively the output of filtering common mode inductance L1, the other end ground connection of filtering common mode inductance L1 output; The other end of the output of filtering common mode inductance L1 is connected to the collector electrode of triode Q1 via resistance R 3, the collector electrode of triode Q1 is also connected to the base stage of triode Q1 via resistance R 4, the base stage of triode Q1 is via negative electrode, the plus earth of voltage-stabiliser tube VD3, the emitter of triode Q1 is connected to the feeder ear of described control chip U1 via resistance R 10, the feeder ear of described control chip U1 is also via capacitor C 9 ground connection, and the emitter of triode Q1 is also via electrochemical capacitor C4 ground connection.The other end of the output of filtering common mode inductance L1 is also connected between inductance L 3 and inductance L 4 via inductance L 2.The other end of the output of filtering common mode inductance L1 is also connected to the negative electrode of voltage-stabiliser tube VD1, the plus earth of voltage-stabiliser tube VD1 via resistance R 1; The negative electrode of voltage-stabiliser tube VD1 is also connected to the input of described control chip U1 via resistance R 2, one end of resistance R 5 connects the input DIM of described control chip U1, the other end ground connection of resistance R 5, and capacitor C 6 is parallel to resistance R 5.One end of resistance R 13 connects the first output OUT1 of described control chip U1, the other end of resistance R 13 connects the grid of field effect transistor V1, the source ground of field effect transistor V1, the drain electrode of field effect transistor V1 connects one end of inductance L 3, the other end of inductance L 3 connects one end of inductance L 4, the other end of inductance L 4 connects the drain electrode of field effect transistor V2, the source ground of field effect transistor V2, the grid of field effect transistor V2 is connected to the second output OUT2 of described control chip U1 via resistance R 14, the two ends of capacitor C 0 connect respectively one end of inductance L 3 and the other end of inductance L 4.One end of the high-pressure side inductance L 6 of transformer T2 connects the drain electrode of field effect transistor V1 via the primary side inductance L 5 of transformer T1, the other end of inductance L 6 connects the drain electrode of field effect transistor V2 via capacitor C 14, capacitor C 15 shunt capacitance C14, load RL is parallel to capacitor C 15; One end ground connection of the low-pressure side inductance L 7 of transformer T2, the other end of inductance L 7 is connected to the test side SYNC of described control chip U1 via resistance R 16, capacitor C 12, the negative electrode of voltage-stabiliser tube VD2 connects the test side SYNC of described control chip, the plus earth of voltage-stabiliser tube VD2, resistance R 6 shunt regulator tube VD2.Described power supply circuits also can comprise fuse F1, and fuse F1 is serially connected in described power supply circuits.
Direct current supply voltage is added to respectively the collector electrode of triode Q1 and the centre cap of transformer T1 by filtering common mode inductance LI, capacitor C 2, resistance R 3, inductance L 2, and the pressurizer being comprised of triode Q1 is powered to integrated circuit (being comprised of control chip U1 and peripheral auxiliary circuits thereof).Inductance L 2 is powered to recommending pipe field effect transistor V1, field effect transistor V2 by the centre cap of transformer T1.The 250KC square-wave pulse that control chip U1 internal oscillator produces is by the 12nd, 11 pin (are pin OUT1, pin OUT2, pin OUT1, pin OUT2 is respectively the first output, the second output) export resistance R 13 to, resistance R 14 is added to respectively field effect transistor V1 again, the grid of field effect transistor V2, field effect transistor V1 and field effect transistor V2 conducting in turn under the driving of square-wave pulse, the primary inductance L3 of inductance L 2 and output transformer T1, the resonant network that inductance L 4 and capacitor C 0 form produces resonance in 250KC frequency, make field effect transistor V1, field effect transistor V2 is operated in soft on off state.Because push-pull circuit is low-voltage power supply, the primary turns of output transformer can not be too many, inductance L 3, inductance L 4 inductance values are also not too large, therefore resonant network Q value is lower, the voltage of output transformer secondary inductance L5 induction, be not enough to encourage electrodeless lamp tube Discharge illuminating, increase transformer T2, by inductance L 6 and capacitor C 14, the secondary resonant network that capacitor C 15 forms, in 250KC frequency, producing secondary resonance produces, because the Q value of secondary resonant network is higher, in capacitor C 14, the High AC voltage that capacitor C 15 two ends produce finally exports load (electrodeless lamp tube) RL to by capacitor C 16.
In the present embodiment, described control chip is SA82 family chip, and the peripheral auxiliary circuits of described control chip comprises capacitor C 5, capacitor C 7, capacitor C 8, resistance R 7, resistance R 8, resistance R 11, resistance R 12, capacitor C 10, capacitor C 11, diode D1, resistance R 18, resistance R 17, electrochemical capacitor C13, resistance R 15.One end of one end of capacitor C 5, capacitor C 7 is ground connection respectively, the other end of the other end of capacitor C 5, capacitor C 7 connects respectively two port CT2, the CT1 of described control chip U1, connectivity port, one end CT1 of capacitor C 8, the other end of capacitor C 8 connects the port RT0 of described control chip via resistance R 7, one end of capacitor C 8 also connects the port RT1 of described control chip via resistance R 8.The other end of inductance L 7 connects the anode of diode D1 via resistance R 8, the negative electrode of diode D1 is connected to the port PRT of described control chip via resistance R 12, and one end of resistance R 17 connects the anode of diode D1, the other end ground connection of resistance R 17.One end of electrochemical capacitor C13 connects the negative electrode of diode D1, the other end ground connection of electrochemical capacitor C13, capacitor C 11, resistance R 15 are parallel to respectively electrochemical capacitor C13, one end of resistance R 11 connects the port PRTO of described control chip, the other end connectivity port PRT of resistance R 11, connectivity port, one end PRT of capacitor C 10, the other end ground connection of capacitor C 10.
In sum, the core of this utility model is: 1. utility model is with the pulse driver element circuit of voltage detecting, the 3rd pin that the voltage detecting circuit being comprised of resistance R 1, resistance R 2, resistance R 5, voltage-stabiliser tube VD1, capacitor C 6 inputs to supply voltage the control chip U1 of integrated circuit is that input DIM carries out voltage detecting, corresponding different supply power voltage is adjusted driving pulse width automatically, to meet the self adaptation to different brackets input voltage.2. the voltage of two resonant networks stack.The Q value of the resonant network forming due to inductance L 3, inductance L 4 and capacitor C 0 is lower, the voltage of output transformer secondary inductance L5 induction, be not enough to encourage electrodeless lamp tube Discharge illuminating, increased the secondary resonant network being formed by inductance L 6 and capacitor C 14, capacitor C 15, because the Q value of secondary resonant network is higher, the alternating voltage producing is very high, can reach excitation electrodeless lamp tube Discharge illuminating object.3. automatic frequency tracking.The voltage of being responded to by inductance L 7 is delivered to the control chip U1 of integrated circuit the 5th pin by resistance R 16, capacitor C 12, resistance R 6, voltage-stabiliser tube VD2 is that test side SYNC carries out frequency detecting, when first and second resonant network output frequency drifts about, the square-wave pulse frequency that synchronous circuit of control chip U1 inside produces oscillator is carried out from motion tracking
The utility model passes through: 1., with the pulse driver element circuit of voltage detecting, corresponding different supply power voltage is adjusted driving pulse width automatically, to meet the self adaptation to input voltage; 2. adopt the higher push-pull inverter of low pressure conversion efficiency, directly the inversion boosting of carrying out to low-voltage dc voltage; 3. utilize the mode of twice resonance and the characteristic of electrodeless lamp tube of the output transformer coilloading coil of push-pull inverter to mate, produce high-frequency and high-voltage sinusoidal wave.Thereby make to encourage electrodeless lamp tube Discharge illuminating to meet following condition: 1. circuit is taked single step arrangement; 2. supply power voltage 12V-48V is general; 3. power output covers 10-80W scope, and wide voltage high-power electrodeless lamp ballast substitutes traditional low-voltage non-polar lamp ballast.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of doing within spirit of the present utility model and principle, be equal to and replace and improvement etc., within all should being included in protection range of the present utility model.
Claims (5)
1. the wide voltage high-power electrodeless of a direct current 12V-48V lamp ballast, it is characterized in that: it comprises power supply circuits, power driving circuit, pulse driving circuit, voltage detecting circuit, resonant network, secondary resonant network, frequency detection circuit, control circuit, and described control circuit comprises control chip and peripheral auxiliary circuits thereof, wherein, one end of described power supply circuits connects outside 12V-48V DC power supply, the other end of described power supply circuits is connected to a described resonant network on the one hand, via described power driving circuit, be connected to described control chip on the other hand, one end of described pulse driving circuit is connected to described control chip, the other end of described pulse driving circuit connects a described resonant network, a described resonant network is connected to load via described secondary resonant network, described voltage detecting circuit one end connects described power supply circuits, the described voltage detecting circuit other end connects described control chip, one end of described frequency detection circuit connects described control chip, the other end of described frequency detection circuit connects described secondary resonant network.
2. the wide voltage high-power electrodeless of direct current 12V-48V as claimed in claim 1 lamp ballast, is characterized in that: described power supply circuits comprise filtering common mode inductance L1, capacitor C 1, capacitor C 2, resistance R 3, inductance L 2; Described power driving circuit comprises triode Q1, resistance R 4, voltage-stabiliser tube VD3, electrochemical capacitor C4, resistance R 10, capacitor C 9; Described pulse driving circuit comprises resistance R 13, resistance R 14, field effect transistor V1, field effect transistor V2; Described voltage detecting circuit comprises resistance R 1, resistance R 2, resistance R 5, voltage-stabiliser tube VD1, capacitor C 6; A described resonant network comprises inductance L 2, transformer T1, capacitor C 0; Described secondary resonant network comprises transformer T2, capacitor C 14, capacitor C 15, capacitor C 16, load RL; Described frequency detection circuit comprises capacitor C 7, resistance R 6, voltage-stabiliser tube VD2, capacitor C 12, resistance R 16; Wherein, the primary side of transformer T1 comprises inductance L 3, the inductance L 4 of serial connection, and the primary side of transformer T1 comprises all the inductance L 5 with inductance L 3, inductance L 4 couplings; The collector electrode of triode Q1 is also connected to the base stage of triode Q1 via resistance R 4, the base stage of triode Q1 is via negative electrode, the plus earth of voltage-stabiliser tube VD3, the emitter of triode Q1 is connected to the feeder ear of described control chip via resistance R 10, the feeder ear of described control chip is also via capacitor C 9 ground connection, and the emitter of triode Q1 is also via electrochemical capacitor C4 ground connection; The other end of the output of filtering common mode inductance L1 is also connected between inductance L 3 and inductance L 4 via inductance L 2; The other end of filtering common mode inductance L1 output is also connected to the negative electrode of voltage-stabiliser tube VD1, the plus earth of voltage-stabiliser tube VD1 via resistance R 1; The negative electrode of voltage-stabiliser tube VD1 is also connected to the input of described control chip via resistance R 2, one end of resistance R 5 connects the input of described control chip, the other end ground connection of resistance R 5, and capacitor C 6 is parallel to resistance R 5; One end of resistance R 13 connects the first output of described control chip, the other end of resistance R 13 connects the grid of field effect transistor V1, the source ground of field effect transistor V1, the drain electrode of field effect transistor V1 connects one end of inductance L 3, the other end of inductance L 3 connects one end of inductance L 4, the other end of inductance L 4 connects the drain electrode of field effect transistor V2, the source ground of field effect transistor V2, the grid of field effect transistor V2 is connected to the second output of described control chip via resistance R 14, the two ends of capacitor C 0 connect respectively one end of inductance L 3 and the other end of inductance L 4; One end of the high-pressure side inductance L 6 of transformer T2 connects the drain electrode of field effect transistor V1 via the primary side inductance L 5 of transformer T1, the other end of inductance L 6 connects the drain electrode of field effect transistor V2 via capacitor C 14, capacitor C 15 shunt capacitance C14, load RL is parallel to capacitor C 15; One end ground connection of the low-pressure side inductance L 7 of transformer T2, the other end of inductance L 7 is connected to the test side of described control chip via resistance R 16, capacitor C 12, the negative electrode of voltage-stabiliser tube VD2 connects the test side of described control chip, the plus earth of voltage-stabiliser tube VD2, resistance R 6 shunt regulator tube VD2.
3. the wide voltage high-power electrodeless of direct current 12V-48V as claimed in claim 2 lamp ballast, it is characterized in that: described control chip is SA82 family chip, the peripheral auxiliary circuits of described control chip comprises capacitor C 5, capacitor C 7, capacitor C 8, resistance R 7, resistance R 8, resistance R 11, resistance R 12, capacitor C 10, capacitor C 11, diode D1, resistance R 18, resistance R 17, electrochemical capacitor C13, resistance R 15, one end of capacitor C 5, one end of capacitor C 7 is ground connection respectively, the other end of capacitor C 5, the other end of capacitor C 7 connects respectively two port CT2 of described control chip, CT1, connectivity port, one end CT1 of capacitor C 8, the other end of capacitor C 8 connects the port RT0 of described control chip via resistance R 7, one end of capacitor C 8 also connects the port RT1 of described control chip via resistance R 8, the other end of inductance L 7 connects the anode of diode D1 via resistance R 8, the negative electrode of diode D1 is connected to the port PRT of described control chip via resistance R 12, one end of resistance R 17 connects the anode of diode D1, the other end ground connection of resistance R 17, one end of electrochemical capacitor C13 connects the negative electrode of diode D1, the other end ground connection of electrochemical capacitor C13, capacitor C 11, resistance R 15 is parallel to respectively electrochemical capacitor C13, one end of resistance R 11 connects the port PRTO of described control chip, the other end connectivity port PRT of resistance R 11, connectivity port, one end PRT of capacitor C 10, the other end ground connection of capacitor C 10.
4. the wide voltage high-power electrodeless of direct current 12V-48V as claimed in claim 2 lamp ballast, is characterized in that: triode Q1 is NPN type triode.
5. the wide voltage high-power electrodeless of direct current 12V-48V as claimed in claim 2 lamp ballast, is characterized in that: field effect transistor V1, field effect transistor V2 are N channel field-effect pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420247264.2U CN203872421U (en) | 2014-05-13 | 2014-05-13 | DC 12V-48V wide-voltage large-power electrodeless lamp ballast |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420247264.2U CN203872421U (en) | 2014-05-13 | 2014-05-13 | DC 12V-48V wide-voltage large-power electrodeless lamp ballast |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203872421U true CN203872421U (en) | 2014-10-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420247264.2U Withdrawn - After Issue CN203872421U (en) | 2014-05-13 | 2014-05-13 | DC 12V-48V wide-voltage large-power electrodeless lamp ballast |
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| CN (1) | CN203872421U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103945623A (en) * | 2014-05-13 | 2014-07-23 | 夏轶 | Direct-current 12V-48V wide-voltage high-power electrodeless lamp ballast |
| CN106208668A (en) * | 2016-09-07 | 2016-12-07 | 广州金升阳科技有限公司 | Pfc circuit, PFC control circuit and Switching Power Supply |
-
2014
- 2014-05-13 CN CN201420247264.2U patent/CN203872421U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103945623A (en) * | 2014-05-13 | 2014-07-23 | 夏轶 | Direct-current 12V-48V wide-voltage high-power electrodeless lamp ballast |
| CN103945623B (en) * | 2014-05-13 | 2016-05-11 | 夏轶 | The wide voltage high-power electrodeless of a kind of direct current 12V-48V lamp ballast |
| CN106208668A (en) * | 2016-09-07 | 2016-12-07 | 广州金升阳科技有限公司 | Pfc circuit, PFC control circuit and Switching Power Supply |
| CN106208668B (en) * | 2016-09-07 | 2019-07-19 | 广州金升阳科技有限公司 | Pfc circuit, PFC control circuit and Switching Power Supply |
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| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20141008 Effective date of abandoning: 20160511 |
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| C25 | Abandonment of patent right or utility model to avoid double patenting |