CN203840291U - Ultra-bandwidth amplifier - Google Patents

Abstract

The utility model provides an ultra-bandwidth amplifier. The ultra-bandwidth amplifier comprises a power amplification unit and an impedance matching circuit connected to the output end or the input end of the power amplification unit, wherein the impedance matching circuit comprises a primary coil, a secondary coil in mutual inductance coupling with the primary coil, a primary tuning capacitor connected in parallel with the primary coil, and a secondary tuning capacitor connected in parallel with the secondary coil. By configuring the self-inductance coefficient of the primary coil, the self-inductance coefficient of the secondary coil, the mutual inductance coefficient of the primary coil and the secondary coil, the capacitance value of the primary tuning capacitor and the capacitance value of the secondary tuning capacitor, the impedance matching circuit has a first mutual resonant frequency point and a second mutual resonant frequency point, and the insertion loss of the impedance matching circuit on an entire frequency band between the first mutual resonant frequency point and the second mutual resonant frequency point is less than 3dB, thereby realizing ultra-bandwidth impedance matching by using the same impedance matching circuit.

Description

The wide amplifier of overclocking

[technical field]

The utility model relates to a kind of amplifier, particularly relates to the wide amplifier of a kind of overclocking.

[background technology]

Mobile radio system is widely applied at present.Mobile radio system develops into the twentieth century 2G digital system of the nineties from the twentieth century early stage 1G analogue system eighties, then develop into present 3G 4G system, in the future may develop into 5G system.The target of cordless communication network is to provide seamless broadband connection to user all over the world.

Wireless mobile communications can carry out on multiple frequency bands, such as, 2G GSM (Global System of Mobile communication) standard is supported several frequency bands such as 900MHz (GSM900), 1800MHz (GSM1800) and 1900MHz (GSM-1900), and WCDMA (Wideband Code Division Multiple Access) standard is 8 frequency bands nearly.The frequency range of LTE (Long Term Evolution) standard definition exceedes 40.Different frequency bands will significantly impact the design of hardware, especially the design of power amplifier.

As a rule, power amplifier is narrow-band device, need to be that each frequency band designs an independently power amplifier.Multi-mode/multi-band cell phone all includes multiple power amplifiers to support multiple frequency bands at present.Fig. 1 shows the example block diagram of traditional multi-mode/multi-band power amplifier 10, and it can support n frequency band, is respectively f1, f2 and fn.Described power amplifier 10 comprises input impedance matching circuit 1, power amplification unit 1 and the output impedance matching unit 1 of promising frequency band f1 design, for input impedance matching circuit 2, power amplification unit 2 and the output impedance matching unit 2 of frequency band f2 design, be input impedance matching circuit n, power amplification unit n and the output impedance matching unit n that frequency band fn designs, wherein n is more than or equal to 2.Visible, existing multi-mode/multi-band power amplifier 10 has designed independent power amplification unit and independent I/O impedance matching network for each frequency band.But this design can increase chip area and cost.

In radio frequency and microwave circuits, usually adopt the transformer of coil mutual inductance coupling to carry out input-output adapt ation or interstage matched, transformer can flexible configuration be difference-difference channel on the one hand, also can be configured to single-ended-single-end circuit, or the conversion circuit of single-ended-difference, differential to single-ended; ESD (electrostatic discharge protection) protection can be effectively provided on the other hand; With regard to side circuit, also there is following advantage: 1. interstage coupling has DC coupling, needn't use AC coupling capacitance; 2. can provide feed to circuit neatly; 3. designing impedance matching flexibly; 4. in circuit design, also there is power division, the function such as synthetic.But, in traditional design, only there is narrow-band characteristic based on transformer-coupled amplifier circuit, in the time of reply multimode multi-frequency (can correspondingly launch, associated exemplary is as Fig. 1) application, need multiple corresponding circuit could cover broadband character like this, thus, be necessary traditional design to improve, to meet the application of broadband system, greatly reduce the hardware resource of circuit.

[utility model content]

The purpose of this utility model is to provide a kind of overclocking wide amplifier, and it can realize the wide impedance matching of overclocking.

To achieve these goals, the utility model proposes the wide amplifier of a kind of overclocking, it comprises: power amplification unit, for radio-frequency input signals is carried out to power amplification, be connected in described power amplification unit output the wide output impedance match circuit of overclocking and/or be connected in the wide input impedance matching circuit of overclocking of the input of described power amplification unit, described impedance matching circuit comprises primary coil, secondary coil with primary coil Mutual Inductance Coupling, with the elementary tuning capacitance of parallel connection of primary windings and with the secondary tuning capacitance of parallel connection of secondary windings, the two ends of primary coil are as radio-frequency (RF) signal input end, the two ends of secondary coil are as the output of radiofrequency signal, by the coefficient of self-inductance of configuration primary coil, the coefficient of self-inductance of secondary coil, the coefficient of mutual inductance of primary coil and secondary coil, the capacitance of elementary tuning capacitance, the capacitance of secondary tuning capacitance, make described impedance matching circuit there is the first mutual resonance frequency and the second mutual resonance frequency, the Insertion Loss of the whole frequency band of described impedance matching circuit between the first mutual resonance frequency and the second mutual resonance frequency is all less than 3dB.

Further, the coefficient of self-inductance ratio of the impedance matching ratio-dependent primary coil based on load and secondary coil; According to the loaded Q of load and the tentatively definite impedance matching circuit of bandwidth requirement; Based on the coefficient of self-inductance of this coefficient of self-inductance ratio and the selected primary coil of loaded Q and secondary coil; The self-resonance frequency of self-resonance frequency, secondary coil and the secondary tuning capacitance of minimum frequency of operation, primary coil and elementary tuning capacitance based on the wide amplifier of overclocking is determined the capacitance of elementary tuning capacitance and secondary tuning capacitance; The second resonance frequency of the maximum operation frequency based on the wide amplifier of overclocking and described impedance matching circuit is determined described coefficient of mutual inductance.

Further, elementary tuning capacitance and secondary tuning capacitance are switchable capacitors.

Further, the relative bandwidth f of the wide amplifier of described overclocking _bWbe more than or equal to 50%, wherein f _bW=(f _h-f _l)/f _c, f _c=(f _h+ f _l)/2, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking, f _hfor the maximum operation frequency of the wide amplifier of described overclocking.

Further, loaded Q=R _l/ (2 π * f _l* L ₂), R _lfor load impedance, L ₂for the coefficient of self-inductance of secondary coil, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking.

Compared with prior art, input impedance matching circuit in the utility model and/or output matching resistance utilize Mutual Inductance Coupling coil to realize the wide impedance matching of overclocking, thereby can reduce the shared area of power amplifier with and manufacturing cost, also can greatly reduce the complexity of design simultaneously.

[brief description of the drawings]

In order to be illustrated more clearly in the technical scheme of the utility model embodiment, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.Wherein:

Fig. 1 is the block diagram of traditional multiband power amplifier;

Fig. 2 shows the wide amplifier of overclocking in the utility model block diagram at an embodiment;

Fig. 3 shows impedance matching circuit in the utility model circuit diagram at an embodiment;

Fig. 4 (A) shows impedance matching circuit in Fig. 3 return loss curve synoptic diagram under a configuration parameter;

Fig. 4 (B) shows impedance matching circuit in Fig. 3 Insertion Loss curve synoptic diagram under this configuration parameter;

Fig. 5 is the schematic flow sheet in one embodiment of method for designing of the wide amplifier of overclocking in the utility model.

[embodiment]

Detailed description of the present utility model is mainly carried out the running of direct or indirect simulation technical solutions of the utility model by program, step, logical block, process or other symbolistic descriptions.For the thorough the utility model of understanding, a lot of specific detail in ensuing description, are stated.And in the time there is no these specific detail, the utility model may still can be realized.Under those of skill in the art uses these descriptions herein and states the work essence of effectively introducing them to the others skilled in the art in affiliated field.In other words, be the purpose of this utility model of avoiding confusion, due to the method for knowing and easily understanding of program, therefore they are not described in detail.

Alleged " embodiment " or " embodiment " refers to special characteristic, structure or the characteristic that can be contained at least one implementation of the utility model herein.Different local in this manual " in one embodiment " that occur not all refer to same embodiment, neither be independent or the embodiment mutually exclusive with other embodiment optionally.

Fig. 2 shows the wide amplifier of overclocking in the utility model block diagram at an embodiment.As shown in Figure 2, the wide amplifier of described overclocking comprise power amplification unit 220, be connected in the input of described power amplification unit 220 the wide input impedance matching circuit 210 of overclocking, be connected in the wide output impedance match circuit 230 of overclocking of the output of described power amplification unit 220.

Described power amplification unit 220 is for to radio-frequency input signals RF _iNcarry out power amplification.

As shown in Figure 3, the wide output impedance match circuit 210 of described overclocking and/or the wide input impedance matching circuit 230 of described overclocking can be the transformer of Mutual Inductance Coupling coil, and described impedance matching circuit comprises primary coil L ₁, with primary coil L ₁the secondary coil L of Mutual Inductance Coupling ₂, with primary coil L ₁elementary tuning capacitance C in parallel ₁with with secondary coil L ₂secondary tuning capacitance C in parallel ₂, primary coil L ₁two ends as radio-frequency (RF) signal input end, secondary coil L ₂two ends as the output of radiofrequency signal.

Primary coil L ₁with secondary coil L ₂coefficient of mutual inductance be k, k is less than 1 positive number, the coefficient of mutual inductance of coefficient of self-inductance, primary coil and the secondary coil of coefficient of self-inductance, secondary coil by configuration primary coil, the capacitance of elementary tuning capacitance, the capacitance of secondary tuning capacitance, can make this Mutual Inductance Coupling coil have the first mutual resonance frequency and the second mutual resonance frequency, the Insertion Loss of the whole frequency band of this impedance matching circuit between the first mutual resonance frequency and the second mutual resonance frequency is all less than 3dB.

Introduce the first mutual resonance frequency in Fig. 3 and the derivation of the second mutual resonance frequency below.

Shown in Fig. 3, the input impedance of seeing is from left to right:

$Z_{\mathrm{in}}=\frac{s^3{R}_1{L}_1{L}_2{C}_2(1-k^2)+s^2{L}_1{L}_2(1-k^2)+s{L}_1{R}_1}{s^4{R}_1{C}_1{C}_2{L}_1{L}_2(1-k^2)+s^3{C}_1{L}_1{L}_2(1-k^2)+s^2{R}_1(L_1{C}_1+L_2{C}_2)+s{L}_2+R_1}---\left(1\right)$

Unloaded in the situation that, input impedance is:

$Z_{\mathrm{in}}=\frac{s^3{L}_1{L}_2{C}_2(1-k^2)+s{L}_1}{s^4{C}_1{C}_2{L}_1{L}_2(1-k^2)+s^2(L_1{C}_1+L_2{C}_2)+1}---\left(2\right)$

The position of limit is:

$s^2=\frac{-(L_1{C}_1+L_2{C}_2)\±\sqrt{{(L_1{C}_1+L_2{C}_2)}^2-4C_1{C}_2{L}_1{L}_2(1-k^2)}}{2C_1{C}_2{L}_1{L}_2(1-k^2)}---\left(3\right)$

As the self-resonance frequency ω of primary coil and elementary tuning capacitance (abbreviation primary side) ₁self-resonance frequency ω with secondary coil and secondary tuning capacitance (abbreviation primary side) ₂while being tuned on same frequency, have:

$\begin{array}{c}{s}^2=\frac{-(L_1{C}_1+L_2{C}_2)\±\sqrt{{(L_1{C}_1+L_2{C}_2)}^2-4C_1{C}_2{L}_1{L}_2(1-k^2)}}{2C_1{C}_2{L}_1{L}_2(1-k^2)}\\ s^2=\frac{-(\frac{1}{{\mathrm{\ω}}_1^2}+\frac{1}{{\mathrm{\ω}}_2^2})\±\sqrt{{(\frac{1}{{\mathrm{\ω}}_1^2}+\frac{1}{{\mathrm{\ω}}_2^2})}^2-4(1-k^2)\frac{1}{{\mathrm{\ω}}_1^2}\frac{1}{{\mathrm{\ω}}_2^2}}}{2(1-k^2)\frac{1}{{\mathrm{\ω}}_1^2}\frac{1}{{\mathrm{\ω}}_2^2}}\\ s^2=\frac{-({\mathrm{\ω}}_1^2+{\mathrm{\ω}}_2^2)\±\sqrt{{({\mathrm{\ω}}_1^2+{\mathrm{\ω}}_2^2)}^2-4(1-k^2){\mathrm{\ω}}_1^2{\mathrm{\ω}}_2^2}}{2(1-k^2)}\\ s^2=\frac{-(1-\mathrm{\ξ})\±\sqrt{{(1+\mathrm{\ξ})}^2-4\mathrm{\ξ}(1-k^2)}}{2(1-k^2)}{\mathrm{\ω}}_2^2\\ {\mathrm{\ω}}_1=\frac{1}{\sqrt{L_1{C}_1}},{\mathrm{\ω}}_2=\frac{1}{\sqrt{L_2{C}_2}}\end{array}----\left(4\right)$

When ξ=1, when namely the self-resonance frequency of primary side and the self-resonance frequency of primary side are tuned on same frequency, its root is:

$s^2=\frac{-(1+1)\±\sqrt{{(1+1)}^2-4(1-k^2)}}{2(1-k^2)}{\mathrm{\ω}}_2^2=\frac{-1\±k}{1-k^2}{\mathrm{\ω}}_2^2---\left(5\right)$

Therefore, the first mutual resonance frequency ω _lwith the second mutual resonance frequency ω _hbe respectively:

${\mathrm{\ω}}_L=\frac{1}{\sqrt{1+k}}{\mathrm{\ω}}_2,{\mathrm{\ω}}_H=\frac{1}{\sqrt{1-k}}{\mathrm{\ω}}_2---\left(6\right)$

The first mutual resonance frequency ω _lwith the second mutual resonance frequency ω _hby self-resonance frequency ω ₂jointly determine with coefficient of mutual inductance k.

The design core of this broadband impedance matching circuit is, in the time of k=1, the input impedance of seeing from the left side only has a pair of conjugate pole, i.e. resonance frequency, and traditional design is that k is designed to approach ideal value 1 as far as possible, thereby obtains better Insertion Loss performance.And in the time of k<1, will there be two pairs of conjugate poles, one of them is the first limit (or claiming the first mutual resonance frequency), frequency is lower, this is exactly that the mutual inductance coefficient of mutual inductance k utilizing traditionally introduces, another frequency is higher, being the second limit (or claiming the second mutual resonance frequency), is by leakage inductance L _leakagecause leakage inductance L _leakageat primary coil L ₁port see and can be equivalent to (1-k ²) * L ₁, when k obtains a reasonable value, what two teams' conjugate pole can lean on so is relatively near, and now whole impedance operator can approach the characteristic that forms Chebyshev's band pass filter.

Fig. 4 (A) shows impedance matching circuit in Fig. 3 return loss curve synoptic diagram under one group of configuration parameter, Fig. 4 (B) shows impedance matching circuit in Fig. 3 Insertion Loss curve synoptic diagram under this group configuration parameter, wherein this group configuration parameter is k=0.7, L ₁=L ₂=1nH, C ₁=C ₂=1pF, R _s=R _l=50ohm, R _sfor the source resistance of impedance matching circuit, R _lfor the load resistance of impedance matching circuit.As shown in Fig. 4 (A), this impedance matching circuit has two mutual resonance frequencies, first near 4.2GHz, second near 8.5GHz, near mutual resonance frequency, Insertion Loss is very little.As shown in Fig. 4 (B), two Insertion Loss corresponding to mutual resonance frequency are 0dB left and right, the Insertion Loss of the frequency band between two mutual resonance frequencies is also all less than 3dB, in whole frequency band range between can finding out from 3GHz to 9.5GHz, the Insertion Loss of impedance matching circuit is all less than 3dB, impedance matching effect is all very good, can meet design requirement.

In addition,, in the utility model, adopted the relative bandwidth f of the wide amplifier of overclocking of the impedance matching circuit shown in Fig. 3 _bWbe more than or equal to 50%, thereby realized super wide bandwidth, wherein f _bW=(f _h-f _l)/f _c, f _c=(f _h+ f _l)/2, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking, f _hfor the maximum operation frequency of the wide amplifier of described overclocking.

In sum, by configuring suitable parameter, can make described impedance matching circuit obtain two pairs of conjugate poles, in the time that coefficient of mutual inductance k obtains a reasonable value, what the two pairs of conjugate poles can lean on so is relatively near, now whole impedance operator can approach the characteristic that forms Chebyshev's band pass filter, thereby can realize the impedance matching to overclocking bandwidth signals.

Fig. 5 is the schematic flow sheet in one embodiment of method for designing 500 of the wide amplifier of overclocking in the utility model, and the wide amplifier of described overclocking comprises the impedance matching circuit as shown in Figure 3 proposing in the utility model.As shown in Figure 5, described method for designing 500 comprises the steps.

Step 510, the impedance matching ratio-dependent primary coil L based on load ₁with secondary coil L ₂coefficient of self-inductance ratio, tentatively determine the loaded Q of described impedance matching circuit according to load and bandwidth requirement, determine the minimum frequency of operation f of the wide amplifier of overclocking _lwith maximum operation frequency f _u.

In one example, if the source impedance of Mutual Inductance Coupling coil is 100ohm, load impedance is 50ohm, and the impedance matching ratio of load is source impedance R _swith load impedance R _lratio, that is to say that it is 2:1, it equals L ₁and L ₂ratio.

Described loaded Q=R _l/ (2 π * f _l* L ₂), R _lfor load impedance, L ₂for the coefficient of self-inductance of secondary coil, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking.

Step 520, the coefficient of self-inductance of the selected primary coil of the coefficient of self-inductance ratio based on definite and loaded Q and secondary coil.

Step 530, determines elementary tuning capacitance C ₁with secondary tuning capacitance C ₂capacitance, make the self-resonance frequency ω of primary side (primary coil and elementary tuning capacitance) ₁and the self-resonance frequency ω of primary side (secondary coil and secondary tuning capacitance) ₂all be positioned near minimum frequency of operation fL.

Can obtain C according to following formula ₁and C ₂capacitance,

${\mathrm{\&omega;}}_1=\frac{1}{\sqrt{L_1{C}_1}},{\mathrm{\&omega;}}_2=\frac{1}{\sqrt{L_2{C}_2}}.$

Step 540, the value of the coefficient of mutual inductance k of estimation primary inductance and secondary inductance, makes the second mutual resonance frequency of described impedance matching circuit be positioned at maximum operation frequency f _unear.

Wherein the first mutual resonance frequency ω of impedance matching circuit _lwith the second mutual resonance frequency ω _hbe respectively:

${\mathrm{\&omega;}}_L=\frac{1}{\sqrt{1+k}}{\mathrm{\&omega;}}_2,{\mathrm{\&omega;}}_H=\frac{1}{\sqrt{1-k}}{\mathrm{\&omega;}}_2,$

Step 550, put the frequency response characteristic of impedance matching circuit described in parameters simulation according to the assembly obtaining, a described assembly is set to the coefficient of mutual inductance of coefficient of self-inductance, primary coil and the secondary coil of coefficient of self-inductance that parameter comprises primary coil, secondary coil, the capacitance of elementary tuning capacitance, the capacitance of secondary tuning capacitance.

Step 560, whether determination frequency response characteristic meets designing requirement, if so, finishes design process, if not, turns back to and in step 520, proceeds Iterative Design.

In design process, the preferred tuning capacitance C that adjusts conventionally ₁, C ₂with the value of k, L is adjusted in rear consideration ₁and L ₂choosing value, this is because inductance value adjustment is more difficult, and the adjustment of capacitance is relatively easy comparatively speaking.Each Iterative Design all can obtain one group of configuration parameter, and based on the frequency response characteristic of impedance matching circuit described in current configuration parameter emulation, whether determination frequency response characteristic meets designing requirement subsequently.

In one example, described designing requirement at least comprises that the Insertion Loss of the whole frequency band of described impedance matching circuit between the first mutual resonance frequency and the second mutual resonance frequency is all less than 3dB.In another example, described designing requirement at least also comprises: the relative bandwidth f of the wide amplifier of described overclocking _bWbe more than or equal to 50%,

Wherein f _bW=(f _h-f _l)/f _c, f _c=(f _h+ f _l)/2, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking, f _hfor the maximum operation frequency of the wide amplifier of described overclocking.

The utility model is not limited to the coupling of single coil, also be applicable to the situation of multiple coil couplings, the method that also can provide with this patent completely such as broadband design, the power detector of coil coupling mode etc. of power synthetic method Power Combiner is optimized; On this basis, if any multiple coil couplings and tuning, choose zero different pole locations, can realize the more multistage wide-band amplifier in broadband.

In addition, the impedance matching circuit in the utility model is not only applicable to one-stage amplifier, is also applicable to casacade multi-amplifier scheme.

The utility model is not limited to the mode that coil is realized, but need to consider the factor such as feeding classification, area of amplifier; In optimizing process, if area accounts for back burner, can consider so self-induction of loop sense value to be done greatly as far as possible, increase coefficient of mutual inductance simultaneously, will obtain larger bandwidth; If area accounts for leading factor, otherwise can; But two kinds of situations all need to ensure that the Q value of self-induction can not be too little, otherwise will have a strong impact on Insertion Loss and impedance transformation characteristic.

The utility model is not only applicable to radio frequency, uses completely for the wide-band amplifier of microwave, millimere-wave band yet, is not only applicable to chip-scale, and this patent also can be applied to the broadband design of pcb board level, package level etc. completely.

In the utility model, if by tuning capacitance C ₁and C ₂become switchable capacitors (switchable capacitor), wide-band amplifier can be for conversion into broadband adjustable (tunable) amplifier;

In micro mechanical system (MEMS), if the relative position of two coils is adjustable, then be equipped with adjustable tuning capacitance, can be embodied as the adjustable broadband amplification system of bandwidth.

Above-mentioned explanation has fully disclosed embodiment of the present utility model.It is pointed out that and be familiar with the scope that any change that person skilled in art does embodiment of the present utility model does not all depart from claims of the present utility model.Correspondingly, the scope of claim of the present utility model is also not limited only to previous embodiment.

Claims (5)

1. the wide amplifier of overclocking, is characterized in that, it comprises:

Power amplification unit, for carrying out power amplification to radio-frequency input signals;

Be connected in the output of described power amplification unit or/and the wide impedance matching circuit of the overclocking of input,

Described impedance matching circuit comprise primary coil, with the secondary coil of primary coil Mutual Inductance Coupling, with the elementary tuning capacitance of parallel connection of primary windings and with the secondary tuning capacitance of parallel connection of secondary windings, the two ends of primary coil are as radio-frequency (RF) signal input end, the two ends of secondary coil are as the output of radiofrequency signal

The coefficient of mutual inductance of coefficient of self-inductance, primary coil and the secondary coil of coefficient of self-inductance, secondary coil by configuration primary coil, the capacitance of elementary tuning capacitance, the capacitance of secondary tuning capacitance, make described impedance matching circuit have the first mutual resonance frequency and the second mutual resonance frequency, the Insertion Loss of the whole frequency band of described impedance matching circuit between the first mutual resonance frequency and the second mutual resonance frequency is all less than 3dB.

2. the wide amplifier of overclocking according to claim 1, is characterized in that,

Impedance matching ratio-dependent primary coil based on load and the coefficient of self-inductance ratio of secondary coil;

According to the loaded Q of load and the tentatively definite impedance matching circuit of bandwidth requirement;

Based on the coefficient of self-inductance of this coefficient of self-inductance ratio and the selected primary coil of loaded Q and secondary coil;

The self-resonance frequency of self-resonance frequency, secondary coil and the secondary tuning capacitance of minimum frequency of operation, primary coil and elementary tuning capacitance based on the wide amplifier of overclocking is determined the capacitance of elementary tuning capacitance and secondary tuning capacitance;

The second resonance frequency of the maximum operation frequency based on the wide amplifier of overclocking and described impedance matching circuit is determined described coefficient of mutual inductance.

3. the wide amplifier of overclocking according to claim 1, is characterized in that, elementary tuning capacitance and secondary tuning capacitance are switchable capacitors.

4. the wide amplifier of overclocking according to claim 1, is characterized in that,

The relative bandwidth f of the wide amplifier of described overclocking _bWbe more than or equal to 50%,

Wherein f _bW=(f _h-f _l)/f _c, f _c=(f _h+ f _l)/2, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking, f _hfor the maximum operation frequency of the wide amplifier of described overclocking.

5. the wide amplifier of overclocking according to claim 1, is characterized in that,

Loaded Q=R _l/ (2 π * f _l* L ₂), R _lfor load impedance, L ₂for the coefficient of self-inductance of secondary coil, f _lfor the minimum frequency of operation of the wide amplifier of described overclocking.